Relevant bibliographies by topics / InGaN/Si

Academic literature on the topic 'InGaN/Si'

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Published: 6 September 2023

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Journal articles on the topic "InGaN/Si"

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Gridchin V. O., Reznik R. R., Kotlyar K. P., Dragunova A. S., Kryzhanovskaya N. V., Serov A. Yu., Kukushkin S. A., and Cirlin G. E. "MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates: comparative analysis." Technical Physics Letters 48, no. 14 (2022): 24. http://dx.doi.org/10.21883/tpl.2022.14.52105.18894.

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In this work, InGaN nanowires with a high In content were grown, for the first time on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN nanowires and creating optoelectronic devices in the visible spectral range. Keywords: InGaN, nanowires, molecular beam epitaxy, SiC/Si, morphological properties, optical properties, miscibility gap, silicon carbide on silicon
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Buryi, M., T. Hubáček, F. Hájek, V. Jarý, V. Babin, K. Kuldová, and T. Vaněk. "Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells." Journal of Physics: Conference Series 2413, no. 1 (December 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2413/1/012001.

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The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed of at least two contributions peaking at 2.17 and 2.39 eV, respectively. In and Si affect the intensity of the defects-related band – the larger the In and/or Si concentration the stronger the band. The detailed investigation of the observed phenomena was conducted, and the observed peculiarities were explained.
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Noh, Siyun, Jaehyeok Shin, Yeon-Tae Yu, Mee-Yi Ryu, and Jin Soo Kim. "Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires." Nanomaterials 13, no. 2 (January 16, 2023): 358. http://dx.doi.org/10.3390/nano13020358.

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We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and consequently to contribute more to the PEC-WS reaction with electrolyte. The PEC-WS using the InGaN/GaN-HSNW PC shows the current density of 12.6 mA/cm2 at −1 V versus reversible hydrogen electrode (RHE) and applied-bias photon-to-current conversion efficiency of 3.3% at −0.9 V versus RHE. The high-performance PEC-WS using the InGaN/GaN HSNWs can be explained by the increase in the reaction probability of carriers at the interface between InGaN NWs and electrolyte, which was analyzed by electrical resistance and capacitance values defined therein.
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Tuan, Thi Tran Anh, Dong-Hau Kuo, Phuong Thao Cao, Van Sau Nguyen, Quoc-Phong Pham, Vinh Khanh Nghi, and Nguyen Phuong Lan Tran. "Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer." Coatings 9, no. 11 (October 25, 2019): 699. http://dx.doi.org/10.3390/coatings9110699.

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The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.
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Han, Ji Sheng, Sima Dimitrjiev, Li Wang, Alan Iacopi, Qu Shuang, and Xian Gang Xu. "InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate." Materials Science Forum 679-680 (March 2011): 801–3. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.801.

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Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.
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Wang, Xingyu, Peng Wang, Hongjie Yin, Guofu Zhou, and Richard Nötzel. "An InGaN/SiNx/Si Uniband Diode." Journal of Electronic Materials 49, no. 6 (March 13, 2020): 3577–82. http://dx.doi.org/10.1007/s11664-020-08038-5.

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Ager, Joel W., Lothar A. Reichertz, Yi Cui, Yaroslav E. Romanyuk, Daniel Kreier, Stephen R. Leone, Kin Man Yu, William J. Schaff, and Wladyslaw Walukiewicz. "Electrical properties of InGaN-Si heterojunctions." physica status solidi (c) 6, S2 (January 26, 2009): S413—S416. http://dx.doi.org/10.1002/pssc.200880967.

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ALBERT, S., A. BENGOECHEA-ENCABO, M. A. SANCHEZ-GARCÍA, F. BARBAGINI, E. CALLEJA, E. LUNA, A. TRAMPERT, et al. "ORDERED GAN/INGAN NANORODS ARRAYS GROWN BY MOLECULAR BEAM EPITAXY FOR PHOSPHOR-FREE WHITE LIGHT EMISSION." International Journal of High Speed Electronics and Systems 21, no. 01 (March 2012): 1250010. http://dx.doi.org/10.1142/s0129156412500103.

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The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111) . The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into self-assembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientations.
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Yamamoto, Akio, Kazuki Kodama, Md Tanvir Hasan, Naoteru Shigekawa, and Masaaki Kuzuhara. "MOVPE growth of thick (∼1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells." Japanese Journal of Applied Physics 54, no. 8S1 (July 21, 2015): 08KA12. http://dx.doi.org/10.7567/jjap.54.08ka12.

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Cho, ll-Wook, Bom Lee, Kwanjae Lee, Jin Soo Kim, and Mee-Yi Ryu. "Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice." Journal of Nanoscience and Nanotechnology 21, no. 11 (November 1, 2021): 5648–52. http://dx.doi.org/10.1166/jnn.2021.19460.

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The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.
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Dissertations / Theses on the topic "InGaN/Si"

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Way, Austin J. "Fabrication of a-Si and a-InGaN Photovoltaics by Plasma Sputtering." Ohio University Honors Tutorial College / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1398270155.

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Jakkala, Pratheesh Kumar. "Fabrication of Si/InGaN Heterojunction Solar Cells by RF Sputtering Method: Improved Electrical and Optical Properties of Indium Gallium Nitride (InGaN) Thin Films." Ohio University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1490714042486824.

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Liang, Hu. "Fabrication of high power InGaN/GaN multiple quantum well blue LEDs grown on patterned Si substrates /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20LIANG.

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Ali, Ahmed Ahmed. "Développement des dispositifs à base des nanofils III-V pour le photovoltaïque." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS496/document.

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Depuis une vingtaine d’année les nanofils des semiconducteurs suscitent un intérêt majeur pour des applications diverses grâce à leurs propriétés optoélectroniques particulières. Dans le domaine du photovoltaïque ils présentent aussi un atout majeur. La combinaison du fort coefficient d’absorption des semiconducteurs III-V et le faible coût des substrats de silicium permettraient la réalisation des cellules photovoltaïques à faible coût et à haut rendement. C’est dans ce contexte que s’est déroulé cette thèse qui visait le développement des dispositifs à base des nanofils III-V pour le photovoltaïque. Dans une première partie, les techniques de nanofabrication pour la réalisation des dispositifs à base d’ensemble de nanofils pour les cellules photovoltaïques sont présentées. Ensuite, la fabrication et la caractérisation de dispositifs à base d’ensembles de nanofils de GaN pour les applications photovoltaïque sont permis d’ouvrir la voie au développement des cellules solaires tandems d’InGaN⁄Si. Dans la suite des travaux on a étudié la croissance des nanofils de GaAs du type cœur-coquille sur Si ainsi que les étapes technologiques pour la fabrication des dispositifs à base d’ensemble de nanofils dans l’optique de préparer le terrain pour la réalisation d’une cellule tandem III-V sur Si. Enfin la croissance et la caractérisation électro-optique des nanofils contenant des jonctions axiales de GaAsP crus par la méthode VLS-EJM a permis de déterminer le type de dopage et l’optimisation de la structure en vue d’obtenir un effet photovoltaïque
Over the past twenty years, semiconductor nanowires have attracted major interest for various applications thanks to their particular optoelectronic properties. The combination of the high absorption coefficient of the III-V semiconductors and the low cost of the silicon substrates would allow the realization of photovoltaic cells at low cost and high efficiency. It is in this context that this thesis was developed which focused on the development of devices based on III-V nanowires for photovoltaics. In a first part, the nanofabrication techniques for the realization of devices based on set of nanowires for photovoltaic cells are presented. Next, the fabrication and characterization of devices based on GaN nanowire arrays for photovoltaic applications is paving the way for the development of InGaN / Si tandem solar cells. In the following, we studied the growth of core-shell GaAs nanowires on Si as well as the technological steps for the fabrication of nanowire-based devices in order to prepare the ground for the realization of a tandem III-V cell on Si. Finally, the growth and electro-optical characterization of the nanowires containing axial junctions of raw GaAsP by the VLS-EJM method made it possible to determine the type of doping and the optimization of the structure in order to obtain a photovoltaic effect
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Wu, Han-Ming, and 巫漢銘. "Bendable InGaN Light Emitting Membranes Separated from Si Substrates." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/5v63zv.

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碩士
國立中興大學
材料科學與工程學系所
106
In this study, InGaN-based light-emitting diodes were separated from silicon substrates as a light-emitting membrane by electrochemical wet etching technique. High lateral wet etching rate on the sacrificial layer was achieved to the lift-off process. In the FE-SEM image and optical measurement, the thickness of the separated membrane which we calculated is about 5.4 micrometer. It matched the thickness which we grew by MOCVD. In the Raman spectra, the Raman peak of the ST-LED was measured at 568.9 cm-1 and the LEM was observed at 568.3 cm-1. The peak shifted about 0.6 cm-1. It indicated that the compressive strain was released from the silicon substrate. In the photoluminescence spectra, the PL intensity of the LEM stronger than the ST-LED . In the far field radiation pattern, the divergence angle of ST-LED is 105 degree, and the LEM is 142 degree, furthermore, the LEM (bend down) is 116 degree. So, the divergence angle of LEM can be tuned by changing the curvature under bending condition. In the electroluminescence spectrum, the peak wavelength of the ST-LED and LEM (flat) (bend down) (bend up) are almost the same. And the EL intensity of LEM is stronger than ST-LED. This result was consistent with the analysis of photoluminescence spectra. Using the methods of this paper to produce InGaN Light Emitting Membranes which can separate devices from the substrate rapidly and the Si substrate can be re-used. In this paper, the InGaN LEMs were separated from Si substrate by electrochemical etching system. It was found that the luminescence wavelength of the LEM was not affected by the bending test but the divergence angle of LEM could be changed by the bending test. Furthermore, after the separation process, the Si substrate can be re-used because of the good surface roughness. In the future, this process technology has considerable potential for the separation of the InGaN-based LEDs from the substrate.
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Nien-TingTsai and 蔡念庭. "White-light Emitted InGaN Nanorods Grown on Pyramided Si Substrate." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/70799793370194978645.

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碩士
國立成功大學
物理學系
104
In this study, InGaN nanorods were grown on pyramided Si substrate by plasma-assisted molecular beam epitaxy system (PA-MBE). We have grown white-light emitting InGaN nanorods on pyramid Si substrate with single flux ratio, thus causing different In and Ga contents and different emission colors on each face of pyramid Si substrate. From SEM images, the different morphologies of the nanorods are revealed on each face of pyramid Si substrate. When In flux and Ga flux impinges vertically on pyramid, the InGaN nanorods show large rod diameter. However, when In flux and Ga flux impinges with grazing incidence on pyramid result in nanorods with small diameter. The length of the nanorods is about 1 μm. In addition, the direction of N flux enables to control the growth direction of InGaN nanorods on pyramid substrate, which we obviously found nanorods to tilt toward the top of pyramid. PL spectrum measurement results show that the white light emission has been achieved successfully by InGaN nanorods, and the spectrum exhibits a continuous emission range. We have confirmed that each face of pyramid substrate has different composition and different light emission by using spatial resolved catholuminescence (CL) and electron energy loss spectroscopy (EDS) measurements. Finally, we apply the mechanical force on InGaN nanorods, and PL spectrum shows the emission peaks with blue shift of 7 nm due to the photo-piezoelectric effect of III-nitride semiconductors.
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Hsu, Jui-wei, and 徐瑞偉. "Bottom-up nanoheteroepitaxy of semipolar InGaN quantum on Si substrates." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/40639143505958822144.

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碩士
國立中央大學
光電科學與工程學系
102
this paper proposes the use of ZnO nanorods structure to overcome the mismatch of thermal expansion and the atomic lattice between Si and GaN. We have successfully grown diameter 150nm,and 400nm length of zinc oxide nano-rods array that can achieve GaN on Si , ZnO not only exhibits the lattice constant and thermal expansion coefficient similar to GaN, the oxide alloy can also be easily etched in chemical solutions, which greatly saves the subsequent processing cost. In order to increase internal quantum efficiency (IQE) of the emitter grown on Si, we grew semi-polar nano-pyramidal InGaN/GaN multiple quantum wells with uniquely developed conditions. Further, it is found that the GaN grown on ZnO/Si exhibits p-type behaviors, which is due to the diffusion of Zn into GaN. If confirmed, IQE of the semi-polar quantum wells can be further enhanced through a p-side-down structure, our simulation results show P-side down structure reduces Spillover current ratio of 0.1 or less, and can increase IQE to 0.7 to enhance light efficiency.
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Chandan, Greeshma K. "InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4237.

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The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted molecular beam epitaxy (PAMBE) system equipped with a radio frequency (RF) plasma source. Device quality GaN epilayers were obtained and InGaN/Si(111) heterojunctions were studied. In- GaN based multi-quantum well LED structure has been realized for green emission. Further catalyst free ultra fine GaN nanorods were grown using a two step method and further InGaN nanostructures were embedded in the as-grown nanorods. InGaN quantum dots were grown using droplet epitaxy and were characterized by Scanning Tunnelling Microscopy and Spectroscopy. It gives a brief introduction about III-nitride materials, growth, substrate selection, significance of III-Nitrides and Si integration and role of dimensionality. It deals with experimental techniques including the details of PAMBE system used in this work, substrate preparation, and detailed characterization of III-nitride epitaxial layers as well as nanostructures. It deals with the optimization of GaN epilayers on AlN/Si (111) templates. AlN underlayer was chosen to minimize the concentration of defects and also acts as an insulating layer which is crucial when it comes to integration of many other devices. The growth temperature was optimized under nitrogen rich growth regime and with the use of a thinner and better quality AlN underlayer and Si doping we could achieve device quality epilayers ( 1500 arc sec) for a thickness of 150 nm. The electron concentration and mobility were found to be -1.374 _1019cm􀀀3 (indicating n-type) and 72 cm2/V.s. Current-voltage measurements were carried out in temperature range of 77K-400K and the current conduction mechanisms at room temperature were identified. An in-depth analysis of temperature dependent current-voltage measurements reveal that the barrier height at the interface is not uniform and is found to have a double Gaussian distribution of barrier heights. It deals with the growth of InGaN epilayers on Si (111) with various substrate treatments. Actual indium composition was determined considering the bi-axial strain present in the epilayers. The effect of substrate treatment on epilayers evolution and quality are discussed. We could observe room temperature photoluminescence from the as-grown epilayers indicating that the epilayers are of good optical quality. InGaN/Si heterojunctions were studied for UV-detection applications. It was found that the heterojunction behaved as a self-powered device, i.e., the device showed a sharp rise in the photocurrent under UV illumination at zero bias. The rise and decay times were found to be 20ms and 33 ms respectively. The bandgap of grown InGaN epilayers were tuned for emission in Green wavelength range. (500nm-550nm) It discusses the sequential process involved in the unition of individual layers to successfully achieve a multi- quantum well structure. In the previous chapter, InGaN epilayers with emission in the green (500nm) region were obtained and having identified the growth conditions for green emission, InGaN epilayers were further grown on GaN/Si (111) and we could tune the bandgap to obtain the emission in blue region. The effect of InGaN growth on thickness was studied which finally led us to develop a growth sequence for successfully obtaining a multi quantum well structure. It deals the growth, structural and optical characterization of InGaN nanostructures embedded in GaN nanorods. The first part deals with the spontaneous growth of very fine (20nm diameter) GaN nanorods on Si (111). Low temperature photoluminescence spectroscopy (LTPL) was used to determine the optical properties of the GaN nanorods. The second part discusses the growth conditions for embedding InGaN in the earlier formed GaN nanorods. The effect of substrate temperature on the evolution of InGaN structures is assessed. Scanning Transmission Electron Microscopy along with Energy Dispersive Spectroscopy (STEM/EDS) is used to determine the elemental distributions in the as-grown nanostructures. LTPL was carried out to determine the emission characteristics of the InGaN/GaN nanostructures. We could successfully obtain room temperature emission in blue region from the core-shell nanorods which happens to be rare achievement. It deals with the growth of high indium content InGaN QDs by droplet epitaxy has been attempted for the first time. The experimental conditions behind InGa droplet formation have been discussed. The influence of droplet formation temperature on the transition from nanoscale structures to quantum dots has been discussed. Room temperature scanning tunnelling microscopy and spectroscopy measurements were carried out. It was found that the QDs exhibited compositional variations even at nanoscale from STM/STS studies. It gives the summary and conclusions of the present study and also discusses about future research directions in this area.
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Lin, Hsien-yu, and 林憲佑. "Characterization of GaN and InGaN Grown on Patterned 7o-off (001) Si Substrate." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/76531257618176604728.

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碩士
國立中央大學
電機工程研究所
99
This dissertation describes an innovative method for selective epitaxial growth of semi-polar (1-101) GaN on V-grooved Si substrates. In addition to the SiO2 mask along the V grooves, SiO2 stripes perpendicular to the V grooves are introduced to overcome the issue of cracking caused by the large mismatch in the thermal expansion coefficients between GaN and Si. The structural and optical properties of the GaN films thus grown, particularly the reduction in dislocation density and the enhancement of their luminescence properties by the selective area epitaxial process, are investigated and elucidated. The growth of semi-polar (1-101) GaN films as thick as 1µm without cracks and InGaN/GaN multiple quantum wells (MQWs) on the resultant GaN have been successfully achieved on V-grooved (001) Si substrate in a dimension of 1x1 cm2. The transmission electron microscopy (TEM) measurements reveal that the dislocations bend toward the [1-100] and [11-20] directions as a consequence of the (1-101) and (11-22) facets that form during the initial stage of the lateral overgrowth upon the SiO2 stripes. This reduction in the dislocation density leads to an increase in the luminescence intensity as observed by photoluminescence (PL) and cathodoluminescence (CL) measurements at room temperature. Finally, the crack-free film was successfully fabricated to devices and showed low leakage current under the bias of -12 V while the turn-on voltage is about 4 V due to the inefficient ionization of Mg in p-GaN layer. Judging from the optical and electrical properties observed, the selective growth method holds promise for high quality free-standing semi-polar GaN substrates and III-nitride semiconductor devices once we further improve Magnesium (Mg) ionization in GaN layer. Secondly, the performance of semi-polar (1-101) light emitting diodes (LEDs) are simulated with variations in the thickness of the MQWs, the barrier doping concentration, and the Aluminum (Al) composition of the AlGaN Electron Blocking Layer (EBL). The highest efficiency is obtained when the thickness of the (1-101) semi-polar quantum wells (QWs) and quantum barriers (QBs) are 3 nm and 9 nm, respectively. It is also found that inserting an AlGaN EBL does not help much for blocking electrons possibly due to the inherently weak polarization, which suppresses the escape of the electrons out of the QW active region. Finally, an opposite IQE tendency was found when different doping concentrations in QBs were applied in (1-101) and (0001) LED structures. The lower polarization field in the semi-polar structure enables the QWs to accommodate more electrons and facilitates radiative recombination before spilling over to p-GaN region, thus light efficiency rises with increasing doping concentration to a specific degree; whereas the polarized (0001) LEDs exhibit an initial monotonic drop in efficiency due to the easy overflow of electrons from the MQWs. The higher the doping concentration in the barriers, the higher the spillover current is, suggesting that the Quantum Confined Stark Effect (QCSE) caused by the strong polarization field is the major factor in the observed efficiency degradation with barrier doping.
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Zheng, Yu-Shiang, and 鄭羽翔. "Strain analysis on semipolar nanopyramidal InGaN quantum wells grown on (100) Si substrates." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/8mmy98.

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碩士
國立中央大學
光電科學與工程學系
107
In this study, the effect of lattice strain before and after substrate transfer on the optoelectrionic properties of nanostructured InGaN quantum wells (QWs) structures was investigated. The nanostructure QWs were grown on (100) Si substrates by metal-organic chemical vapor deposition (MOCVD), employing ZnO nanorods as the buffer layer to release the huge stratin between Si and the nitride epilayer. Using the small lattice mismatch between ZnO and GaN, we successfully grew the (10-11) semi-polar nanopyramidal QWs on the (100) Si substrate. The diffusion of Zn into GaN during the epitaxial growth also allows us to achieve the naturally formed p-type GaN, producing the desired p-side-down structure for QWs with enhanced interal quantum efficiency. During the growth, three different flow rates of Bis(cyclopentadienyl)-magnesium Mg(C5H5)2, i.e. 40, 80, and 120 sccm were adopted with the attempt to study the effect of p-type doping on the strain and the quantum efficiency of the QWs. Due to the large thermal mismatch between the GaN epilayer and the Si substrate, huge lattice strain is expected in the epilayer after the MOCVD growth. The strain decreased the internal quantum efficiency of the InGaN QWs via the quantum-confinement Stark effect. The semipolar nanostructured QWs produced in this study are expected to exhibit improved radiative recombination efficiency becoause of the alleived QCSE. In addition, we transferred the epitaxial layer from the Si substrate to a silver substrate using a wet-etching technique, releasing the stress on the samples and increasing reflectivity at the epilayer/substrate interface. The released stress and enhanced interface reflectivity should lead to improved external quantum efficiency of the nanopyramidal QWs. Scanning electron microscopy was used to observe the microstructure of the samples and a simulation software is used to analyze the relationship between the film thickness and the reflection wavelength. The samples were also characterized by x-ray diffraction (XRD) and Raman spectroscopy. According to these characterizations, it is found that the sample with less magnesium doping exhibits less tensile stress, and thus the higher internal quantum efficiency.
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Book chapters on the topic "InGaN/Si"

1

Yablonskii, G. P., and M. Heuken. "Uv-Blue Lasers Based on Ingan/Gan/Al2O3 and on Ingan/Gan/Si Heterostructures." In Towards the First Silicon Laser, 455–64. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_39.

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Yablonskii, G. P., A. L. Gurskii, E. V. Lutsenko, V. Z. Zubialevich, V. N. Pavlovskii, A. S. Anufryk, Y. Dikme, et al. "Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures." In UV Solid-State Light Emitters and Detectors, 297–303. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_26.

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Nakamura, Shuji, Stephen Pearton, and Gerhard Fasol. "Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs." In The Blue Laser Diode, 193–214. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04156-7_9.

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Nakamura, Shuji, and Gerhard Fasol. "Zn and Si Co-Doped InGaN / AlGaN Double-Heterostructure Blue and Blue-Green LEDs." In The Blue Laser Diode, 177–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-662-03462-0_9.

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Khafagy, Khaled H., Tarek M. Hatem, and Salah M. Bedair. "Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates." In TMS 2020 149th Annual Meeting & Exhibition Supplemental Proceedings, 2057–64. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-36296-6_188.

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Mahala, Pramila, Amit K. Goyal, Sumitra Singh, and Suchandan Pal. "Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer." In Lecture Notes in Electrical Engineering, 565–71. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2553-3_55.

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Conference papers on the topic "InGaN/Si"

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Ager, J. W., L. A. Reichertz, K. M. Yu, W. J. Schaff, T. L. Williamson, M. A. Hoffbauer, N. M. Haegel, and W. Walukiewicz. "InGaN/Si heterojunction tandem solar cells." In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922663.

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Yao, Y., J. D. Aldous, D. Won, J. M. Redwing, W. Linhart, C. F. McConville, R. J. Reeves, T. D. Veal, and S. M. Durbin. "Epitaxial InGaN on nitridated Si(111) for photovoltaic applications." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6318131.

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Shuhaimi, A., Z. Hassan, and T. Egawa. "InGaN-based blue LED grown on Si(111) substrate." In 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2011. http://dx.doi.org/10.1109/rsm.2011.6088279.

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Ali, Ahmad Hadi, Ahmad Shuhaimi, and Zainuriah Hassan. "Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer." In 2012 IEEE 3rd International Conference on Photonics (ICP). IEEE, 2012. http://dx.doi.org/10.1109/icp.2012.6379837.

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Kumar, Praveen, and Pooja Devi. "Surface Modified InGaN/Si(111) Photoanode For Efficient Photoelectrochemical Water-Splitting." In The 4th World Congress on New Technologies. Avestia Publishing, 2018. http://dx.doi.org/10.11159/icnfa18.126.

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Zhang, Meng, Wei Guo, Animesh Banerjee, and Pallab Bhattacharya. "InGaN/GaN nanowire green light emitting diodes on (001) Si substrates." In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551984.

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Onomura, Masaaki. "Highly efficient InGaN MQW LEDs grown on 200 mm Si substrates." In SPIE OPTO, edited by Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon, and Hiroshi Fujioka. SPIE, 2014. http://dx.doi.org/10.1117/12.2041082.

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Lee, J., X. Ni, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, et al. "Internal quantum efficiency of m-plane InGaN on Si and GaN." In OPTO, edited by Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Cole W. Litton, Joachim Piprek, and Euijoon Yoon. SPIE, 2010. http://dx.doi.org/10.1117/12.843727.

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Kim, Jun-Youn, Yongjo Tak, Jae Won Lee, Hyun-Gi Hong, Suhee Chae, Hyoji Choi, Bokki Min, et al. "Highly efficient InGaN/GaN blue LED grown on Si (111) substrate." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/cleo_si.2011.cwf1.

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Ito, R., F. R. Hu, K. Ochi, Y. Zhao, and K. Hane. "Flower-structured InGaN/GaN quantum-well nanodisk crystals on micromachined Si pillars." In 2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics. IEEE, 2007. http://dx.doi.org/10.1109/omems.2007.4373901.

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