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1
Larsson, Arvid. "Optical spectroscopy of InGaAs quantum dots." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-64707.
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The work presented in this thesis deals with optical studies of semiconductor quantum dots (QDs) in the InGaAs material system. It is shown that for self-assembled InAs QDs, the interaction with the surrounding GaAs barrier and the InAs wetting layer (WL) in particular, has a very large impact on their optical properties. The ability to control the charge state of individual QDs is demonstrated and attributed to a modulation in the carrier transport dynamics in the WL. After photo-excitation of carriers (electrons and holes) in the barrier, they will migrate in the sample and with a certain probability become captured into a QD. During this migration, the carriers can be affected by exerting them to an external magnetic field or by altering the temperature. An external magnetic field applied perpendicular to the carrier transport direction will lead to a decrease in the carrier drift velocity since their trajectories are bent, and at sufficiently high field strength become circular. In turn, this decreases the probability for the carriers to reach the QD since the probability for the carriers to get trapped in WL localizing potentials increases. An elevated temperature leads to an increased escape rate out of these potentials and again increases the flow of carriers towards the QD. These effects have significantly different strengths for electrons and holes due to the large difference in their respective masses and therefore it constitutes a way to control the supply of charges to the QD. Another effect of the different capture probabilities for electrons and holes into a QD that is explored is the ability to achieve spin polarization of the neutral exciton (X0). It has been concluded frequently in the literature that X0 cannot maintain its spin without application of an external magnetic field, due to the anisotropic electron – hole exchange interaction (AEI). In our studies, we show that at certain excitation conditions, the AEI can be by-passed since an electron is captured faster than a hole into a QD. The result is that the electron will populate the QD solely for a certain time window, before the hole is captured. During this time window and at polarized excitation, which creates spin polarized carriers, the electron can polarize the QD nuclei. In this way, a nuclear magnetic field is built up with a magnitude as high as ~ 1.5 T. This field will stabilize the X0 spin in a similar manner as an external magnetic field would. The build-up time for this nuclear field was determined to be ~ 10 ms and the polarization degree achieved for X0 is ~ 60 %. In contrast to the case of X0, the AEI is naturally cancelled for the negatively charged exciton (X-) and the positively charged exciton (X+) complexes. This is due to the fact that the electron (hole) spin is paired off in case of X- (X+). Accordingly, an even higher polarization degree (~ 73 %) is measured for the positively charged exciton. In a different study, pyramidal QD structures were employed. In contrast to fabrication of self-assembled QDs, the position of QDs can be controlled in these samples as they are grown in inverted pyramids that are etched into a substrate. After sample processing, the result is free-standing AlGaAs pyramids with InGaAs QDs inside. Due to the pyramidal shape of these structures, the light extraction is considerably enhanced which opens up possibilities to study processes un-resolvable in self-assembled QDs. This has allowed studies of Auger-like shake-up processes of holes in single QDs. Normally, after radiative recombination of X+, the QD is populated with a ground state hole. However, at recombination, a fraction of the energy can be transferred to the hole so that it afterwards occupies an excited state instead. This process is detected experimentally as a red-shifted luminescence satellite peak with an intensity on the order of ~ 1/1000 of the main X+ peak intensity. The identification of the satellite peak is based on its intensity correlation with the X+ peak, photoluminescence excitation measurements and on magnetic field measurements.Arbetet som presenteras i denna avhandling rör studier av kvantprickars optiska egenskaper. En kvantprick är en halvledarkristall som endast är några tiotals nanometer stor. Den ligger oftast inbäddad inuti en större kristall av ett annat halvledarmaterial och pga. den begränsade storleken får en kvantprick mycket speciella egenskaper. Bland annat så kommer elektronerna i en kvantprick endast att kunna anta vissa diskreta energinivåer liknande situationen för elektronerna i en atom. Följaktligen kallas kvantprickar ofta för artificiella atomer. För halvledarmaterial gäller det generellt att det inte endast är fria elektroner i ledningsbandet, som kan leda ström utan även tomma elektrontillstånd i valensbandet, vilka uppträder som positivt laddade partiklar, kan leda ström. Dessa kallas kort och gott för hål. I en kvantprick har hålen såsom elektronerna helt diskreta energinivåer. Precis som är fallet i en atom, så kommer elektroniska övergångar mellan olika energinivåer i en kvantprick att resultera i att ljus emitteras. Energin (dvs. våglängden alt. färgen) för detta ljus bestäms av hur energinivåerna i kvantpricken ligger, för elektronerna och hålen, och genom att analysera ljuset kan man således studera kvantprickens egenskaper. Studierna i den här avhandlingen visar att växelverkan mellan en kvantprick och den omgivande kristallen, som den ligger inbäddad i, har stor inverkan på kvantprickens optiska egenskaper. T.ex. visas att man kan kontrollera antalet elektroner, som kommer att finnas i kvantpricken genom att modifiera hur elektronerna kan röra sig i omgivningen. Dessa rörelser modifieras här genom att variera temperaturen och genom att lägga på ett magnetiskt fält. Ett magnetiskt fält, vinkelrätt mot en elektrons rörelse, kommer att böja av dess bana och dess chans att nå fram till kvantpricken kan således minskas. Elektronen kan då istället fastna i andra potentialgropar i kvantprickens närhet. Genom att öka temperaturen, vilket ger elektronerna större energi, kan deras chans att nå fram till kvantpricken å andra sidan öka. En annan effekt, som studerats, är möjligheten att kontrollera spinnet hos elektronerna i en kvantprick. Även i dessa studier visar det sig att växelverkan med omgivningen spelar stor roll och kan användas till att kontrollera elektronens spin. Mekanismen som föreslås är att om elektronerna hinner före hålen till kvantpricken, så hinner de överföra sitt spin till atomkärnorna i kvantpricken. På detta sätt kan man få atomkärnornas spin polariserat, vilket resulterar i ett inbyggt magnetfält, i storleksordningen 1.5 Tesla, som i sin tur hjälper till att upprätthålla en hög grad av spinpolarisering även hos elektronerna. För att få elektronerna att hinna först, måste deras rörelser i omgivningen kontrolleras. I en ytterligare studie undersöktes den process där en elektronisk övergång i kvantpricken inte enbart resulterar i emission av ljus, utan även i att en annan partikel tar över en del av energin och blir exciterad. Dessa processer avspeglas i att en del av det ljus som emitteras har lägre energi. Detta ljus är också mycket svagt, ca 1000 ggr lägre intensitet, och möjligheten att kunna mäta detta är helt beroende på hur ljusstarka kvantprickarna är. De prover som använts i denna studie består av pyramidstrukturer, ca 7.5 mikrometer stora, med kvantprickar inuti. Denna geometri ger ca 1000 ggr bättre ljusutbyte jämfört med traditionella strukturer, vilket möjliggjort studien.
2
Park, Tyler Drue. "Characterization of InGaAs Quantum Dot Chains." BYU ScholarsArchive, 2013. https://scholarsarchive.byu.edu/etd/3718.
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InGaAs quantum dot chains were grown with a low-temperature variation of the Stranski-Krastanov method, the conventional epitaxial method. This new method seeks to reduce indium segregation and intermixing in addition to giving greater control in the growth process. We used photoluminescence spectroscopy techniques to characterize the quality and electronic structure of these samples. We have recently used a transmission electron microscope to show how the quantum dots vary with annealing temperature. Some questions relating to the morphology of the samples cannot be answered by photoluminescence spectroscopy alone. Using transmission electron microscopy, we verified flattening of the quantum dots with annealing temperature and resolved the chemical composition with cross-section cuts and plan view cuts.
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Fry, Paul William. "Optical spectroscopy of InGaAs GaAs self assembled quantum dots." Thesis, University of Sheffield, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275221.
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Brereton, Peter George. "Control of single InGaAs quantum dots with frequency-swept optical pulses." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610893.
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Baer, Norman. "Optical and electronic properties of InGaAs and nitride quantum dots." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=983398089.
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Karlsson, Fredrik. "Spectroscopic studies of InGaAs/GaAs/AlGaAs quantum dots and wires /." Linköping : Univ, 2004. http://www.bibl.liu.se/liupubl/disp/disp2004/tek892s.pdf.
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Cesari, Valentina. "Ultrafast carrier dynamics in P doped InGaAs GaAs quantum dots." Thesis, Cardiff University, 2009. http://orca.cf.ac.uk/54834/.
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In this PhD project the effect of p doping on the carrier dynamics in InGaAs quantum dot amplifiers emitting near 1.3/mi at room temperature has been investigated by transient differential transmission spectroscopy (DTS) and four-wave mixing (FWM) experiments in a heterodyne detection scheme. From DTS experiments, an absorption bleaching on the order of few hundreds of ps and an ultrafast gain recovery were measured at operating condition, i.e. room temperature and with current injection. The faster absorption bleaching recovery observed in p doped amplifiers has been attributed to the carrier-carrier scattering due to built-in holes. Conversely, the gain compression recovery is limited by the lack of an electron reservoir in the dots which has been demonstrated in doped amplifiers. These findings should help in elucidating the role of p doping in the design of QD-based devices with high-speed performances. Temperature dependent DTS measurements have confirmed this interpretation and lead to a microstate model developed at 20 K to represent the gain dynamics. At room temperature the combined study of the gain and refractive index dynamics allows us to measure the line width enhancement factor. We observed that p doping is effective in reducing this parameter. By FWM experiments, the polarization decay of ground state excitonic transitions in the temperature range from 5K to 210 K has been measured to obtain the zero-phonon line (ZPL) width and its contribution to the homogeneous line shape. The temperature-dependent ZPL width is reproduced by a thermally-activated behaviour. This finding has been discussed in the framework of exciton-phonon interactions. Coulomb interaction is investigated by measuring the dephasing time versus injected current at 20 K. From measurements of the homogeneous broadenings of exciton and biexciton transitions we demonstrated that the carrier capture dominates on pure dephasing in these strongly confined dots. Moreover, a much faster dephasing is observed in p doped devices due to Coulomb interaction between built-in holes.
8
Oulton, Ruth. "Optical spectroscopy of single self-assembled InGaAs/GaAs quantum dots." Thesis, University of Sheffield, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.401132.
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Migliorato, Max Antonio. "Atomistic modelling of InGaAs quantum dots with non-uniform composition." Thesis, University of Sheffield, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.289689.
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Koseki, Shinichi. "Monolithic waveguide coupled GaAs microdisk microcavity containing ingaas quantum dots /." May be available electronically:, 2008. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
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Siverns, Philip Douglas. "Optical and structural properties of InGaAs self assembled quantum dots." Thesis, Imperial College London, 2001. http://hdl.handle.net/10044/1/7354.
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Greilich, Alex [Verfasser]. "Spin coherence of carriers in InGaAs/GaAs quantum wells and quantum dots / Alex Greilich." Aachen : Shaker, 2007. http://d-nb.info/1166510565/34.
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Boyle, Stephen James. "Picosecond Coherent Control of Single Self-Assembled InGaAs GaAs Quantum Dots." Thesis, University of Sheffield, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.522495.
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Chauhan, Kripa Nidhan. "Carrier Dynamics in InGaAs/GaAs Quantum Dots Excited by Femtosecond Laser Pulses." DigitalCommons@USU, 2013. https://digitalcommons.usu.edu/etd/1467.
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Ultrafast carrier dynamics studies have been carried out on samples with single layers of self-assembled In0.4Ga0.6As/GaAs quantum dots (QDs). Measurements were made using femtosecond degenerate pump-probe differential reflectivity with an 800-nm, 28-fs Ti-sapphire oscillator as the source. The QDs were grown via modified Stranski-Krastanov growth. This modified growth process consists of two steps: low-temperature growth and high-temperature annealing. Specifically, the InGaAs QD structures are fabricated on n-type GaAs(001) using molecular beam epitaxy. The InGaAs layer is deposited at 350-3700C followed by QD self assembly at 420-4900C. Finally, these QDs are capped with 10 nm or 100 nm of GaAs. The measured width and height of these QDs are typically 25 nm and 8 nm, respectively. Dots annealed at higher temperature have larger base area (width and length) and reduced height, as compared to those annealed at lower temperature. We have used a model consisting of a linear combination of an exponential decaying function to describe the carrier dynamics and fit the reflectivity data, revealing trends in the carrier capture and relaxation times associated with the InGaAs layer versus laser excitation level and QD morphology. Capture times are ~ 1 ps for the 100-nm capped samples, but slightly shorter for the 10-nm capped thin samples, indicating carrier transport plays a role in dynamics. The carrier dynamics in 10-nm capped samples are correlated with sample annealing temperature, indicating QD morphology affects carrier capture. Versus laser intensity, and thus carrier excitation level, the dynamics generally become slower, suggesting state filling is important in both the capture and relaxation of excited carriers in these samples.
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Liew, San Lin. "Advanced transmission electron microscopy studies in Si/SiGe quantum cascade emitters and InGaAs/GaAs quantum dots." Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.421161.
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Höglund, Linda. "Growth and characterisation of InGaAs-based quantum dots-in-a-well infrared photodetectors." Doctoral thesis, Linköpings universitet, Materiefysik, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15774.
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This thesis presents results from the development of quantum dot (QD) based infrared photodetectors (IPs). The studies include epitaxial growth of QDs, investigations of the structural, optical and electronic properties of QD-based material as well as characterisation of the resulting components. Metal-organic vapour phase epitaxy is used for growth of self-assembled indium arsenide (InAs) QDs on gallium arsenide (GaAs) substrates. Through characterisation by atomic force microscopy, the correlation between size distribution and density of quantum dots and different growth parameters, such as temperature, InAs deposition time and V/III-ratio (ratio between group V and group III species) is achieved. The V/III-ratio is identified as the most important parameter in finding the right growth conditions for QDs. A route towards optimisation of the dot size distribution through successive variations of the growth parameters is presented. The QD layers are inserted in In0.15Ga0.85As/GaAs quantum wells (QWs), forming so-called dots-in-a-well (DWELL) structures. These structures are used to fabricate IPs, primarily for detection in the long wavelength infrared region (LWIR, 8-14 μm). The electron energy level schemes of the DWELL structures are revealed by a combination of different experimental techniques. From Fourier transform photoluminescence (FTPL) and FTPL excitation (FTPLE) measurements the energy level schemes of the DWELL structures are deduced. Additional information on the energy level schemes is obtained from tunneling capacitance measurements and the polarization dependence studies of the interband transitions. From tunneling capacitance measurements, the QD electron energy level separation is confirmed to be 40-50 meV and from the polarization dependence measurements, the heavy hole character of the upper hole states are revealed. Further characterisation of the IPs, by interband and intersubband photocurrent measurements as well as dark current measurements, is performed. By comparing the deduced energy level scheme of the DWELL structure and the results of the intersubband photocurrent measurements, the origin of the photocurrent is determined. The main intersubband transition contributing to the photocurrent is identified as the QD ground state to a QW excited state transition. Optical pumping is employed to gain information on the origin of an additional photocurrent peak observed only at temperatures below 60 K. By pumping resonantly with transitions associated with certain quantum dot energy levels, this photocurrent peak is identified as an intersubband transition emanating from the quantum dot excited state. Furthermore, the detector response is increased by a factor of 10, when using simultaneous optical pumping into the quantum dots states, due to the increasing electron population created by the pumping. In this way, the potentially achievable responsivity of the detector is predicted to be 250 mA/W. Significant variations of photocurrent and dark currents are observed, when bias and temperature are used as variable parameters. The strong bias and temperature dependence of the photocurrent is attributed to the escape route from the final state in the QW, which is limited by tunneling through the triangular barrier. Also the significant bias and temperature dependence of the dark current could be explained in terms of the strong variation of the escape probability from different energy states in the DWELL structure, as revealed by interband photocurrent measurements. These results are important for the future optimisation of the DWELL IP. Tuning of the detection wavelength within the LWIR region is achieved by means of a varying bias across the DWELL structure. By positioning the InAs quantum dot layer asymmetrically in a 8 nm wide In0.15Ga0.85As/GaAs quantum well, a step-wise shift in the detection wavelength from 8.4 to 10.3 μm could be achieved by varying the magnitude and polarity of the applied bias. These tuning properties could be essential for applications such as odulators and dual-colour infrared detection.On the day of the defence date the status on article IV was: Accepted.
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Bennett, Anthony John. "A study of InGaAs/GaAs quantum dots and GaInNas/GaAs quantum wells for optoelectronic applications at 1300nm." Thesis, Imperial College London, 2003. http://hdl.handle.net/10044/1/8104.
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Alsolamy, Samar M. "The Study of Coupling in InGaAs Quantum Rings Grown by Droplet Epitaxy." Ohio University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1357840899.
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Mukai, Kohki. "Growth and Characterization of Self-Assembled InGaAs/GaAs Quantum Dots and Their Application to Lasers." Kyoto University, 2000. http://hdl.handle.net/2433/151537.
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本文データは平成22年度国立国会図書館の学位論文(博士)のデジタル化実施により作成された画像ファイルを基にpdf変換したものであるKyoto University (京都大学)
0048
新制・論文博士
博士(工学)
乙第10504号
論工博第3541号
新制||工||1192(附属図書館)
UT51-2000-P671
(主査)教授 藤田 茂夫, 教授 北野 正雄, 教授 野田 進
学位規則第4条第2項該当
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Klingbeil, Matthias [Verfasser]. "Manipulation of the Emission from Natural and Stranski-Krastanow InGaAs Quantum Dots by Strain / Matthias Klingbeil." München : Verlag Dr. Hut, 2013. http://d-nb.info/1035049880/34.
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Nedzinskas, Ramūnas. "Epitaksinių InGaAs kvantinių taškų darinių moduliuoto atspindžio ir fotoliuminescencijos spektroskopija." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2012. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2012~D_20121001_093259-68855.
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Saviformuojantys puslaidininkiniai kvantiniai taškai (quantum dots, QDs), kurių charakteringos elektronų subjuostinių (intraband) šuolių energijos yra infraraudonajame spektriniame ruože (3–25 μm), sudaro daugelio fotojutiklių aktyviąją terpę ir yra aktualūs taikymams šiuolaikinėje optoelektronikoje. Disertacijoje nagrinėjami molekulinio pluoštelio epitaksijos būdu užauginti: -- InAs kvantiniai taškai, įterpti į GaAs matricą ir GaAs/AlAs supergardelę; -- InAs kvantiniai taškai be ir su įtempimus sumažinančiuoju InGaAs sluoksniu, įterpti į kompozitinę GaAs/AlAs kvantinę duobę; -- skirtingo aukščio koloniniai InGaAs kvantiniai taškai arba kvantiniai strypeliai (quantum rods, QRs), apsupti dvimačiu InGaAs sluoksniu, ir užauginti naudojant arba As2, arba As4 šaltinį. Taikant moduliacinę atspindžio spektroskopiją ir fotoliuminescenciją, buvo ištirtos šių darinių optinės savybės bei jų elektroninė sandara, o taip pat atskleista auginimo sąlygų įtaka darinių struktūrai. Eksperimentiniai tyrimai buvo interpretuojami atliekant teorinį modeliavimą skaitmeniniu (nextnano3 programa) bei analitiniu (sukurtas algoritmas) metodais.Self-assembled InAs quantum dots (QDs), whose intersublevel transition energies lie in the mid- and far-infrared spectral range (3–25μm), have attracted particular interest as active elements of infrared photodetectors. This interest is mainly due to intriguing atomic-like quantum confinement and unique optical and electronic properties of QDs. Moreover, QD electronic structure can be adjusted by varying the dots size and shape or their environment. These features make QDs to be of importance in creation of photoelectronic devices with a desired spectral range. The dissertation is concerned specifically with molecular beam epitaxy grown InGaAs QD structures with: -- InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, also referred to as quantum rods (QRs) or quantum posts, of different morphology. (The quantum confined structure consists of vertically oriented InGaAs QRs immersed in a two-dimensional InGaAs layer). These QD structures were studied by modulated reflectance and photo- luminescence spectroscopies to reveal their optical properties and the full- extent of electronic structure. Experimental data were interpreted by numerical (nextnano3 software) and analytical (algorithm developed) modelling.
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Strauß, Stefan Maximilian [Verfasser], Stephan [Akademischer Betreuer] Reitzenstein, Stephan [Gutachter] Reitzenstein, and Mete [Gutachter] Atatüre. "Coherent spectroscopy of InGaAs quantum dots / Stefan Maximilian Strauß ; Gutachter: Stephan Reitzenstein, Mete Atatüre ; Betreuer: Stephan Reitzenstein." Berlin : Technische Universität Berlin, 2018. http://d-nb.info/1168324157/34.
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Vaz, Alfredo Rodrigues. "Espalhamento Raman em Pontos Quânticos de InGaAs." Universidade de São Paulo, 1999. http://www.teses.usp.br/teses/disponiveis/43/43133/tde-14072014-163652/.
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Ilhas de InxGa1-xAs são de grande interesse no desenvolvimento tecnológico de lasers de diodos e diodos emissores de luz. As ilhas de InxGa1-xAs investigadas neste trabalho foram crescidas sobre um substrato semi-isolante de GaAs (001) pelo método de auto-organização usando epitaxia de feixe molecular. Este tipo de ilha, quando isolada e de pequeno tamanho, é considerada um ponto quântico ou sistema zero-dimensional. As amostras foram caracterizadas através do uso da microscopia de força atômica. A densidade e o tamanho dos pontos aumenta com a diminuição da fração molar de In, resultando em uma maior cobertura para o caso de x = O, 25. As características principais dos espectros Raman são os picos que correspondem aos modos LO e TO do substrato de GaAs. Duas estruturas adicionais aparecem no espectro: um pico estreito em 222 cm- 1 e uma banda larga de mais alta energia, que só é resolvida para x = O, 25, centrada em 245 cm-1. O pico em 222 cm-1 é provavelmente devido ao fônon LA(X) do GaAs normalmente proibido, induzido por defeitos. Para identificar a banda larga foi construído um modelo que considera: (i) a frequência Raman do modo tipo- InAs com caráter de LO como constante com a variação de x no InGaAs 3-D; (ii) efeitos de confinamento não afetam a frequência Raman dado ao tamanho dos pontos quânticos das amostras deste trabalho; (iii) A tensão escala com x e o valor máximo ocorre para o composto binário InAs. Este modelo permite prever um intervalo de frequências para os pontos quânticos. O valor medido, 245 cm- 1, está dentro deste intervalo e portanto foi atribuído ao modo tipo-InAs dos pontos quânticos de In0,25Ga0,75As Considerações de simetria reforçam esta designação. Contribuições adicionais de fônons foram consideradas no intervalo de energia de interesse. Para analisar estas contribuições, foi feito um estudo detalhado dos fônons induzidos por desordem em camadas de GaAs, e espalhamento Raman de As cristalino e amorfo. A desordem foi produzida através da erosão por laser e a amostra de As foi formada por um processo de oxidação de um filme de AlAs. Comparação dos espectros Raman permitiu concluir que não houve contribuição de fônons induzidos por desordem no espectro do ponto quântico, seja de GaAs ou arsênio.InxGa1-x As islands are interesting for use in Laser diode and light-emitting diode technology. The InxGa1-x As islands investigated in this work were grown on semi-insulating (001) GaAs substrates by the self-organization method using molecular beam epitaxy. This type of island, when isolated and of small size, is considered as a quantum dot or zero-dimensional system. The samples were characterized by use of atomic force microscopy. The dot density and size were seen to increase as the In molar fraction decreased, resulting in a large dot coverage in the case of x = 0.25. The Raman spectra main features were the peaks corresponding to the LO and TO modes of GaAs-substrate. Second order structures were also present around 520 cm-1 (160 cm-1) for optical (acoustic) vibration of GaAs. Two additional structures appear as a sharp peak at 222 cm- 1 and higher energy broad band, which is resolved only for x = 0.25, at 245 cm- 1. The peak in 222 cm-1 is probably due to the normally forbidden GaAs LA(X) phonon induced by defects. To assign the broad band a model was constructed that considers: (i) the Raman frequency of the InAs-like mode with LO character as constant with x in bulk I nGaAs; (ii) confinement effects for the large dots formed has negligible effects in the quantum dot Raman frequency; (iii) The strain scale with x, the maximun value corresponds to that obtained for InAs. This model allowed to predict a range of frequencies for the dots. The value measured, 245 cm- 1, fit into this range and is, thus, attributed to the InAs-like mode of the In0.25Ga0.75As quantum dots. Selection rules arguments reinforces this assignment. Several additional contributions in the frequency range of interest were considered. In order to analyze those contributions, a detailed study of disorder induced phonons in GaAs, and Raman scattering of As-crystaline and amorphous, was realized. The disorder was produced by laser ablation and the As sample was formed by an oxidation process of an A1As film. Comparison of the Raman spectra allowed to conclude that neither As or GaAs disorder induced phonons contribute to the quantum-dot spectrum.
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Wen, Xiaoming, and n/a. "Ultrafast spectroscopy of semiconductor nanostructures." Swinburne University of Technology, 2007. http://adt.lib.swin.edu.au./public/adt-VSWT20070426.110438.
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Semiconductor nanostructures exhibit many remarkable electronic and optical properties.
The key to designing and utilising semiconductor quantum structures is a physical understanding
of the detailed excitation, transport and energy relaxation processes. Thus the nonequilibrium
dynamics of semiconductor quantum structures have attracted extensive attention in recent years.
Ultrafast spectroscopy has proven to be a versatile and powerful tool for investigating transient
phenomena related to the relaxation and transport dynamics in semiconductors.
In this thesis, we report investigations into the electronic and optical properties of various
semiconductor quantum systems using a variety of ultrafast techniques, including up-conversion
photoluminescence, pump-probe, photon echoes and four-wave mixing. The semiconductor
quantum systems studied include ZnO/ZnMgO multiple quantum wells with oxygen ion
implantation, InGaAs/GaAs self-assembled quantum dots with different doping, InGaAs/InP
quantum wells with proton implantation, and silicon quantum dots. The spectra of these
semiconductor nanostructures range from the ultraviolet region, through the visible, to the
infrared. In the UV region we investigate excitons, biexcitons and oxygen implantation effects in
ZnO/ZnMgO multi-quantum wells using four-wave mixing, pump-probe and photoluminescence
techniques. Using time-resolved up-conversion photoluminescence, we investigate the relaxation
dynamics and state filling effect in InGaAs self-assembled quantum dots with different doping,
and the implantation effect in InGaAs/InP quantum wells. Finally, we study the optical properties
of silicon quantum dots using time-resolved photoluminescence and photon echo spectroscopy on
various time scales, ranging from microseconds to femtoseconds.
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Goldmann, Elias [Verfasser], Frank [Akademischer Betreuer] Jahnke, and Gerd [Akademischer Betreuer] Czycholl. "From Structure to Spectra: Tight-Binding Theory of InGaAs Quantum Dots / Elias Goldmann. Gutachter: Frank Jahnke ; Gerd Czycholl. Betreuer: Frank Jahnke." Bremen : Staats- und Universitätsbibliothek Bremen, 2014. http://d-nb.info/1072225913/34.
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Prohl, Christopher [Verfasser], Mario [Akademischer Betreuer] Dähne, Holger [Akademischer Betreuer] Eisele, Mario [Gutachter] Dähne, Holger [Gutachter] Eisele, and Philipp [Gutachter] Ebert. "Structural characteristics of InGaAs/GaP quantum dots and related materials on the atomic scale / Christopher Prohl ; Gutachter: Mario Dähne, Holger Eisele, Philipp Ebert ; Mario Dähne, Holger Eisele." Berlin : Technische Universität Berlin, 2019. http://d-nb.info/1192370880/34.
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Nieto, González Luis. "Origem e estabilidade de nanoestruturas de InAs sobre ligas de InP e InGaAs." [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278482.
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Orientador: Mônica Alonso CottaTese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
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Resumo: Neste trabalho estudamos os mecanismos de crescimento durante a epitaxia por feixe químico de nanoestruturas III-V baseadas no sistema InAs/InP. Particularmente, foram estudados nanofios e ilhas de InAs sobre uma camada buffer InP(001) e nanofios de InAs sobre uma matriz de InGaAs/InP (com mesmo parâmetro de rede). Apresentaremos, nesta tese, as diferenças e similaridades destes sistemas quanto a condições de crescimento, distribuição de tamanho, forma e os efeitos de volume da camada de InGaAs sobre as nanoestruturas de InAs quando comparadas ao sistema InAs/InP. Nossa escolha do InGaAs/InP como camada buffer para a nucleação dos fios de InAs, foi feita porque facilitaria a utilização deste sistema em diversas aplicações, proporcionando maior flexibilidade no desenho dos dispositivos. Por outro lado, este material abre a possibilidade de controlar as características das nanoestruturas através das propriedades de bulk e superficiais da liga ternária InGaAs. Além disso, ligas ternárias podem exibir efeitos de volume que afetam suas propriedades superficiais. Estes fenômenos podem afetar a nucleação dos fios quânticos e por isso foram objeto de nosso estudo. Para isso utilizamos e correlacionamos medidas in situ de difração de elétrons de alta energia (RHEED), microscopia de força atômica (AFM) e eletrônica de transmissão (TEM), com os resultados obtidos por difração de raios X com incidência rasante (GIXD). Verificamos, deste modo, tanto a influência das condições de crescimento, como o comportamento da relaxação da energia elástica nas nanoestruturas. Com todos estes resultados mostramos como acontece a evolução da deformação nos nanofios e pontos quânticos de InAs/InP e como acontecem as transições de forma entre estes dois tipos de nanoestruturas, em função das condições de crescimento e tipo de superfície do substrato utilizado. Mostramos, também que a introdução de um composto ternário (InGaAs) entre o InAs e o InP não afeta significativamente a forma e tamanho das nanoestruturas quando comparadas ao caso InAs/InP. Em particular, a interdifusão gerada por variações locais da composição na camada buffer em nanofios de InAs pode ser minimizada através de mudanças nas condições de crescimento do InGaAs
Abstract: In this work we study the growth mechanisms of III-V nanostructures by chemical beam epitaxy (CBE) based on the InAs/InP materials system. Particularly, nanowires and nanodots of InAs on InP (001) and InAs nanowires on InGaAs/InP (lattice matched) buffer layers were studied. The differences and similarities of these systems are presented in this text, as a function of growth conditions, size distribution, as well as the bulk effects of the InGaAs layer on InAs nanostructures when compared to the InAs/InP system. Our choice of InGaAs/InP buffer layer for InAs nanowire nucleation was due to the possible use of this system in many applications, providing greater flexibility in device design. Furthermore, this material opens up the possibility of controlling nanostructures characteristics through bulk and surface properties of the InGaAs ternary alloy. In other hand, ternary alloys may present volume effects that affect their surface properties. These phenomena can affect quantum wires nucleation and thus became one of the subjects of our study. With these goals in mind, we have correlated in situ high-energy electrons diffraction (RHEED) measurements, atomic force microscopy (AFM) and transmission electron microscopy (TEM) images with the results obtained by grazing incidence X-ray diffraction (GIXD). We report here the influence of the growth conditions on nanostructure shape as well as the behavior of elastic energy relaxation within the nanostructures. Our results show how the evolution of deformation within InAs/InP nanowires and quantum dots occur and how the shape transition between these two types of nanostructures depend on the growth conditions and the substrate surface type used. We also show that the introduction of a ternary compound (InGaAs) between InAs and InP does not significantly affect the shape and size of nanostructures as compared to the InAs / InP case. In particular, the interdifusion generated in InAs nanowires by local variations in the buffer layer composition can be minimized through changes in InGaAs growth conditions
Doutorado
Estrutura de Líquidos e Sólidos; Cristalografia
Doutor em Ciências
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Tremblay, Ronan. "Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium." Thesis, Rennes, INSA, 2018. http://www.theses.fr/2018ISAR0026/document.
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Ce travail de thèse porte sur les propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium. Parmi les méthodes d’intégration des semi-conducteurs III-V sur Si, l’intérêt de l’approche GaP/Si est tout d’abord discuté. Une étude de la croissance et du dopage de l’AlGaP est présentée afin d’assurer le confinement optique et l’injection électrique dans les structures lasers GaP. Les difficultés d’activation des dopants n sont mises en évidence. Ensuite, les propriétés de photoluminescence des boites quantiques InGaAs/GaP sont étudiées en fonction de la température et de la densité d’excitation. Les transitions optiques mises en jeu sont identifiées comme étant des transitions indirectes de type-I avec les électrons dans les niveaux Xxy et les trous dans les niveaux HH des boites quantiques InGaAs et de type-II avec les électrons dans les niveaux Xz du GaP contraint. Malgré une modification notable de la structure électronique de ces émetteurs, une transition optique directe et type I n’est pas obtenue ce qui reste le verrou majeur pour la promotion d’émetteurs GaP sur Si. La maitrise de l’interface GaP/Si et de l’injection électrique est par ailleurs validée par la démonstration de l’électroluminescence à température ambiante d’une LED GaPN sur Si. Si l’effet laser n’est pas obtenu dans les structures lasers rubans GaP, un possible début de remplissage de la bande Гdans les QDs est discuté. Enfin, l’adéquation des lasers à l’état de l’art avec les critères d’interconnections optiques sur puce est discutéeThis PhD work focuses on the structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon. Amongst the integration approaches of III-V on Si, the interest of GaP/Si is firstly discussed. A study of the growth and the doping of AlGaP used as laser cladding layers (optical confinement and electrical injection) is presented. The activation complexity of n-dopants is highlighted. Then, the photoluminescence properties of InGaAs/GaP quantum dots are investigated as a function of temperature and optical density. The origin of the optical transitions involved are identified as (i) indirect type-I transition between electrons in Xxy states and holes in HH states of quantum dots InGaAs and (ii) indirect type-II with electrons in Xz states of strained GaP. Despite an effective modification in the electronic structure of these emitters, a direct type I optical transition is not demonstrated. This is the major bottleneck in the promotion of GaP based emitters on Si. This said, the control of the GaP/Si interface and electrical injection are confirmed by the demonstration of electroluminescence at room temperature on Si. If no laser effect is obtained in rib laser architectures, a possible beginning of Г band filling in QDs is discussed. Finally, the adequacy of state of the art integrated lasers with the development of on-chip optical interconnects is discussed
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Kuntz, Matthias. "Modulated InGaAs/GaAs quantum dot lasers." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=978686241.
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Pearce, Emma J. "Physics and performance of InGaAs quantum dot lasers." Thesis, Cardiff University, 2005. http://orca.cf.ac.uk/56033/.
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Quantum dot lasers are becoming increasingly technologically important. It is therefore essential to understand the factors affecting their current performance and be able to predict future performance. The gain and unamplified spontaneous emission spectra have been measured for a selection of quantum dot devices and a quantum well device. The quotient of the gain and spontaneous emission spectra were used to calculate the PF spectra and investigate the carrier distribution within the devices. Whilst the quantum well device and devices with one or three layers of dots exhibited characteristics consistent with Fermi-Dirac statistics, devices with more layers dots produced an unusual set of spectra, determined to be due to a non-thermal distribution of carriers in the ground state by looking at the unamplified spontaneous emission spectra. A model was developed to investigate the effects of non-thermal carrier distributions on the calculated PF spectra. From this it was deduced that it was possible to use a fit of a thermal PF to the excited state PF to calibrate the measured unamplified spontaneous emission spectra. The resultant PF, gain and spontaneous emission spectra are sensitive to the exact balance between the homogeneous and inhomogeneous broadenings. This calibration was used to calculate the radiative current densities and compare the radiative efficiencies of different structures, including both Dots-in-Well (DWELL) and standard dot structures. There was no large difference in efficiency found due to improved carrier injection in the DWELL structures. Calculated gain-radiative current density curves were used to predict the minimum transparency and threshold current densities that may be possible in the future. It is clear that the limits of quantum dot device performance have not yet been reached and that a factor of 1.7 improvement in threshold current density over state of the art devices could be achieved, even without reduced inhomogeneous broadening.
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LOPES, ARTUR JORGE DA SILVA. "GROWTH OF QUANTUM DOT TO THE FAMILIES INAS/INP, INAS/INGAAS E INAS/INGAALAS FOR FOTODETECTORS OF INFRARED RADIATION." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2007. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=12288@1.
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CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOPontos quânticos (PQs) auto-organizáveis de InAs sobre InP, InGaAs, InGaAlAs utilizando-se substratos de InP foram crescidos pela deposição química de metal-orgânicos (MOCVD) e foram investigadas para fotodetectores. Para PQs de InAs crescidos sobre diferentes substratos de InP, têm-se que a presença de discordâncias é responsável pelo aumento na densidade planar dos PQs. O espectro de fotoluminescência (FL) das estruturas de InP/InxGa1-xAs/InAs/InP, com diferentes composições da camada ternária. Medidas com microscopia de força atômica (AFM) mostraram que os PQs mais altos são obtidos quando os mesmos são crescidos sobre uma camada de InxGa1-xAs com um descasamento de 1000ppm, e a altura decresce com o descasamento a partir deste valor. O espectro de FL dos PQs mostrou uma banda assimétrica, a qual envolve transições entre os níveis de energia dos PQs e pode ser decomposta em dois picos. Pico de energia mais alta desta banda foi observado para a amostra com PQs crescidos sobre uma camada de InxGa1-xAs casada e o pico foi deslocado para energias mais baixas para amostras tensionadas. Estruturas diferentes de PQ de InAs crescidas sobre uma camada de InGaAlAs casada com InP foram investigadas. Picos de fotocorrente extremamente estreitos foram observados, demonstrando um excelente potencial para sintonização estreita de comprimentos de onda. Foram desenvolvidas estruturas para detectar radiação superior à 10μm. Medidas de absorção mostrando uma dependência com a polarização mostraram eu as estruturas tem um confinamento total e são apropriadas para detecção sintonizável de radiação por incidência normal.
Self-assembled InAs quantum dots (QD) over an InP, InGaAs, InGaAlAs on InP substrates were grown by metal-organic chemical vapor deposition (MOCVD) and were investigated for quantum dot infrared photodetectors. For InAs QD over an InP buffer on different InP substrates. The results indicate that the presence of dislocations were responsible for the increase in the QD density. Photoluminescence (PL) spectra of InP/InxGa1-xAs/InAs/InP dot-in-a-well structures, with different compositions of the ternary layer. Measurements with atomic force microscopy showed that the largest QD height is obtained when the InAs QDs are grown on the InxGa1-xAs layer with a mismatch of 1000ppm, and the height decreases as the mismatch departs from this value. PL spectra of the QDs showed an asymmetric band, which involves transitions between dot energy levels and can be deconvoluted into two peaks. The highest energy PL peak of this band was observed for the sample with the QDs grown on top of the lattice-matched InxGa1-xAs and it shifted to lower energies for strained samples as the degree of mismatch increased. Different InAs quantum dot structures grown on InGaAlAs lattice matched to InP. Extremely narrow photocurrent peaks were observed, demonstrating great potential for fine wavelenght selection. Structures which can detect radiation beyond 10ìm were developed. Polarization dependence measurements showed that the structures have a zero- dimensional character and are suitable for detection of normal incidence light.
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Bhattacharyya, Debabrata. "InGaAs/GaAs self-organised quantum dot lasers : fabrication and characterisation." Thesis, University of Glasgow, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301505.
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Aivaliotis, Pantelis. "New developments in InAs/InGaAs quantum dot-in-a-well infrared photodetectors." Thesis, University of Sheffield, 2007. http://etheses.whiterose.ac.uk/10319/.
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This thesis presents experimental studies of InAs/InGaAs/GaAs quantum dot-in-awell infrared photodetectors (DWELL QDIPs) grown by molecular beam epitaxy (MBE). Detailed studies were carried out to investigate the effects of design parameters on the performance of DWELL photodetectors, along with fundamental studies to determine the intraband optical and electronic properties of such structures. Using the results of these studies, an optimised structure was designed. In addition, the observation of a strong bias dependent spectral photoresponse demonstrated the capability of post growth spectral tunability within the long wavelength IR (LWIR) atmospheric window. Various approaches were investigated for enhancing the performance of quantum dot (QD) based devices. The main shortcoming of QDIPs versus quantum well infrared photodetectors (QWIPs) has been addressed i.e. the low dot density, which prohibits the high doping of these structures. The use of an antimonide surfactant to enhance the dot density in DWELL QDIPs is presented here for the first time. Also a method for decreasing the dark current in QDIPs was investigated, via the use of wide band gap AIGaAs barriers. Another technique using GaP strain balancing layers to reduce the strain in multilayer structures and allow the growth of >20 layer QD devices was illustrated. The effects of intermixing via thermal annealing are also reported in for DWELL QDIPs. As part of this study, the possibility of using such a technique to shift the spectral photoresponse across the 8-12J.lm LWIR window is demonstrated, and it is shown that the performance still remains in a competitive range within the LWIR range. Non-linear two photon absorption in QDIPs was demonstrated and studied. As a result of this study, the capability of QDIPs to operate as quadratic detectors in the far-infrared was established, which could prove very significant, since detector availability is reduced in that range. Finally, a novel approach to photovoltaic QDIPs was investigated experimentally, using a purpose built design in order to provide an internal electric field, which preferentially drives carriers in one direction.
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Andreev, Thomas. "Growth and optical properties of GaN and InGaN quantum dots dops with rare earth ions." Université Joseph Fourier (Grenoble), 2006. http://www.theses.fr/2006GRE10020.
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Ce travail est porté sur les propriétés structurales et optiques de structures à boîtes quantiques III-nitrures dopées avec des terres rares réalisées par épitaxie à jets moléculaires. Pendant la croissance, les terres rares ont une influence drastique sur les boîtes, expliquée par les propriétés surfactantes des atomes de terres rares. La caractérisation optique et structurale montre que les boîtes sont dopées efficacement avec les ions de Eu, Tm et Tb. D'autres localisations des terres rares ont été trouvées, par exemple, pour le Tm, à l'interface du GaN des boîtes et de l'AlN. Ce travail s'intéresse aussi à la dynamique d'excitation de boîtes quantiques dopées aux terres rares. La photoluminescence de couleurs intéressantes est stable de la température de l'hélium liquide jusque la température ambiante. Des structures à boîtes quantiques plus complexes sont aussi abordées : des boîtes InGaN:Eu QDs et des boîtes GaN co-dopées, importante pour la réalisation de composants. Une attention particulière a été mise sur les couches de GaN dopé Eu, où différents sites pour l'Eu ont été mis en évidence près de surface et à l'intérieur de matériauThis work reports on structural and optical properties of plasma assisted molecular beam epitaxy grown rare earth doped III – nitride quantum dots structures. During growth the rare earths have drastic influences on the quantum dot formation, assigned to surfactant properties of the rare earth atoms. Optical and structural characterizations have shown that GaN QDs are effectively doped with the rare earth atoms in the cases of Eu, Tm and Tb. Other rare earth locations have been also established, for example for Tm where a high amount has been found at the GaN QDs interface. The excitation dynamics of rare earth doped GaN QDs which show stable photoluminescence for the colors of interest between liquid helium and room temperature has been addressed. More complicate rare earth doped quantum dot structures are also discussed, like InGaN:Eu QDs and co-doped GaN QDs important for devices. Attention is put also onto rare earth doped GaN layers, where different Eu sites have been established, near the sample surface and inside bulk material
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Huthmacher, Lukas. "Investigation of efficient spin-photon interfaces for the realisation of quantum networks." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/277150.
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Quantum networks lie at the heart of distributed quantum computing and secure quantum communication - research areas that have seen a strong increase of interest over the last decade. Their basic architecture consist of stationary nodes composed of quantum processors which are linked via photonic channels. The key requirement, and at the same time the most demanding challenge, is the efficient distribution of entanglement between distant nodes. The two ground states of single spins confined in self-assembled InGaAs quantum dots provide an effective two-level system for the implementation of quantum bits. Moreover, they offer strong transition dipole moments with outstanding photonic properties allowing for the realisation of close to ideal, high-bandwidth spin-photon interfaces. These properties are combined with the benefits of working in the solid state, such as scalability and integrability of devices, to form a promising candidate for the implementation of fast entanglement distribution. In this dissertation we provide the first implementation of a unit cell of a quantum network based on single electron spins in InGaAs. We use a probabilistic scheme based on spin-photon entanglement and the erasure of which path information to project the two distant spins into a maximally entangled Bell state. The successful generation of entanglement is verified through a reconstruction of the final two-spin state and we achieve an average fidelity of $61.6\pm2.3\%$ at a record-high generation rate of $5.8\,\mathrm{kHz}$. One of the main constraints to the achieved fidelity is the limited coherence of the electron spin. We show that it can be extended by three orders of magnitude through decoupling techniques and develop a new measurement technique, allowing us to investigate the origins of the decoherence which has previously been obscured by nuclear feedback processes. Our results evidence that further extension of coherence is ultimately limited by intrinsic mechanisms closely related to local strain due to the growth method of self-assembled quantum dots. After establishing the intrinsic limits to the electron coherence we investigate the coherence properties of the single hole spin as an alternative two-level system with the potential for higher coherence times. We show that the hole spin coherence is indeed superior to the one of the electron and realise the first successful dynamic decoupling scheme implemented in these systems. We find that the decoherence at low external magnetic fields is still governed by coupling to the nuclear spins whereas it is dominated by electrical noise for fields exceeding a few Tesla. This noise source is extrinsic to the quantum dots and a better understanding offers the potential for further improvement of the coherence time. The findings of this work present a complete study of the coherence of the charge carriers in self-assembled quantum dots and provide the knowledge needed to improve the implementation of a quantum-dot based quantum network. In particular, the combination of spin-spin entanglement and the hole coherence times enable further research towards multidimensional photonic cluster states.
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Tan, Hua. "Chirp and Linewidth Characteristics in Semiconductor Quantum Dot Lasers." University of Cincinnati / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1258477064.
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Reid, Benjamin P. L. "Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:a8d84318-36a8-455f-a2fa-7fb9c4c738a0.
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Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pulsed laser is used to perform time-integrated and time-resolved microphotoluminescence, photoluminescence excitation, and polarisation-resolved spectroscopy of single InGaN quantum dots under a non-linear excitation regime. The first micro-photoluminescence results from InGaN/GaN quantum dots grown on a non-polar crystal plane (11-20) are presented. Time-resolved studies reveal an order of magnitude increase in the oscillator strength of the exciton transition when compared to InGaN quantum dots grown on the polar (0001) plane, suggesting a significantly reduced internal electric field in non-polar InGaN quantum dots. Polarisation resolved spectroscopy of non-polar InGaN quantum dots reveals 100% linearly polarised emission for many quantum dots. For quantum dot emissions with a polarisation degree less than unity, a fine structure splitting between two orthogonal polarisation axes can be resolved in an optical setup with a simple top-down excitation geometry. A statistical investigation into the origins of spectral diffusion in polar InGaN quantum dots is presented, and spectral diffusion is attributed to charge carriers trapped at threading dislocations, and itinerant and trapped carriers in the underlying quantum well layer which forms during the growth procedure. Incorporating quantum dots into the intrinsic region of a p-i-n diode structure and applying a reverse bias is suggested as a method to reduce spectral diffusion. Coherent control of the excited state exciton in a non-polar InGaN quantum dot is experimentally demonstrated by observation of Rabi rotation between the excited state exciton and the crystal ground state. The exciton ground state photoluminescence is used as an indirect measurement of the excited state population.
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Höglund, Linda. "Growth and characterisation of InGaAs-based quantum dot-in-a-well infrared photodetectors /." Linköping : [Department of Physics, Chemistry and Biology, Linköping University], 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15774.
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Katmis, Asli Ugur. "Growth and characterization of InP/In0.48Ga0.52P quantum dots optimized for single-photon emission." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2013. http://dx.doi.org/10.18452/16696.
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In dieser Forschungsarbeit wird das selbstorganisierte Wachstum von InP/InGaP-Quantenpunkten (QP) sowie ihre optischen und strukturellen Eigenschaften untersucht. Die QP wurden auf GaAsgitterangepasstem InGaP gewachsen.Selbstorganisierte InP-QP werden mittels Gasquellen-Molekularstrahlepitaxie gewachsen, wobei die InP-Abscheidungsrate uber einen weiten Bereich variiert wird. Bei besonders geringer Wachstumsratevon rund 0,01 Atomlagen/s wird eine Flachendichte von 1 QP/μm2 erreicht. Die daraus resultierenden InP QP, konnen einzeln charakterisiert werden ohne vorher das Substrat lithografisch behandeln zu mussen. Sowohl exzitonische als auch biexzitonische Emission kann dabei an einzelnen QPn als Doublett mit einer Feinstrukturaufspaltung von 320μeV beobachtet warden. Hanbury-Brown-Twiss Korrelationsmessungen der exzitonischen Emission unter Dauerstrichanregung zeigen Antibunching mit einem Autokorrelationskoeffizienten von g(2)(0)=0.2. Dieses System liee sich beispielsweise als Einzelphotonenquelle in Anwendungsbereichen wie der Quantenkryptographie einsetzen. Daruber hinaus wird die Bildung wohlgeordneter Quantenpunktketten auf GaAs (001)-Substraten unter Ausnutzung einer selbstorganisierten InGaP-Oberflachenwellung demonstriert. Diese Anordnung basiert weder auf gestapelten Quantenpunktschichten noch einem intentionalen Substratschragschnitt. Die Strukturen warden mittels polarisationsabhangiger Photolumineszenzspektroskopie sowie Transmissionselektronenmikroskopie untersucht. Die Lumineszenz der InGaP-Matrix ist in eine kristallografische Richtung polarisiert, bedingt durch anisotrope Verspannung, welche ihrerseits aus der lateralen Variation der Materialzusammensetzung entsteht. Photolumineszenzmessungen der QP zeigen eine lineare Polarisation entlang [-110], der Richtung der Ketten. Der Polarisationsgrad liegt bei 66%. Diese optische Anisotropie wird direkt in einer Heterostruktur hervorgerufen, die lediglich eine Quantenpunktschicht beinhaltet.In this work the growth of self-assembled InP/InGaP quantum dots, as well as their optical and structural properties are presented and discussed. The QDs were grown on InGaP, lattice matched to GaAs.Self-assembled InP quantum dots are grown using gas-source molecular beam epitaxy over a wide range of InP deposition rates, using an ultra-low growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm2 is realized. The resulting isolated InP quantum dots are individually characterized without the need for lithographical patterning and masks on the substrate. Both excitionic and biexcitonic emissions are observed from single dots, appearing as doublets with a fine-structure splitting of 320 μeV. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g(2)(0)=0.2. This system is applicable as a single-photon source for applications such as quantum cryptography. The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized InGaP surface undulations as a template is also demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the InGaP matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots, [-110]. A polarization degree of 66% is observed. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.
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Gustafsson, Oscar. "Type-II interband quantum dot photodetectors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-122294.
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Photon detectors based on single-crystalline materials are of great interest for high performance imaging applications due to their low noise and fast response. The major detector materials for sensing in the long-wavelength infrared (LWIR) band (8-14 µm) are currently HgCdTe (MCT) and AlGaAs/GaAs quantum wells (QW) used in intraband-based quantum-well infrared photodetectors (QWIPs). These either suffer from compositional variations that are detrimental to the system performance as in the case of MCT, or, have an efficient dark current generation mechanism that limits the operating temperature as for QWIPs. The need for increased on-wafer uniformity and elevated operating temperatures has resulted in the development of various alternative approaches, such as type-II strained-layer superlattice detectors (SLSs) and intraband quantum-dot infrared photodetectors (QDIPs). In this work, we mainly explore two self-assembled quantum-dot (QD) materials for use as the absorber material in photon detectors for the LWIR, with the aim to develop low-dark current devices that can allow for high operating temperatures and high manufacturability. The detection mechanism is here based on type-II interband transitions from bound hole states in the QDs to continuum states in the matrix material. Metal-organic vapor-phase epitaxy (MOVPE) was used to fabricate (Al)GaAs(Sb)/InAs and In(Ga)Sb/InAs QD structures for the development of an LWIR active material. A successive analysis of (Al)GaAs(Sb) QDs using absorption spectroscopy shows strong absorption in the range 6-12 µm interpreted to originate in intra-valence band transitions. Moreover, record-long photoluminescence (PL) wavelength up to 12 µm is demonstrated in InSb- and InGaSb QDs. Mesa-etched single-pixel photodiodes were fabricated in which photoresponse is demonstrated up to 8 µm at 230 K with 10 In0.5Ga0.5Sb QD layers as the active region. The photoresponse is observed to be strongly temperature-dependent which is explained by hole trapping in the QDs. In the current design, the photoresponse is thermally limited at typical LWIR sensor operating temperatures (60-120 K), which is detrimental to the imaging performance. This can potentially be resolved by selecting a matrix material with a smaller barrier for thermionic emission of photo-excited holes. If such an arrangement can be achieved, type-II interband InGaSb QD structures can turn out to be interesting as a high-operating-temperature sensor material for thermal imaging applications.QC 20130521
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Robinson, James W. "Time-integrated and time-resolved optical studies of InGaN quantum dots." Thesis, University of Oxford, 2005. http://ora.ox.ac.uk/objects/uuid:26101861-dd7f-4cb7-aecf-f482855a3dea.
Full textAbstract:
The construction of a high-resolution optical microscope system for micro-photoluminescence (µ-PL) spectroscopy is described, and a range of time-integrated and time-resolved experimental work on single InGaN quantum dots (QDs) is presented. Time-integrated measurements demonstrate the existence of InGaN QDs in three different samples via the presence of sharp exciton recombination lines in the µ-PL spectra. The narrowest peaks display a linewidth Γ of ~230 µeV, implying a decoherence time T2 ≥5.7 ps. Time-resolved measurements on exciton recombination lines from single self-assembled InGaN QDs reveal typical lifetimes of ~2.0 ns (which decrease with increasing temperature), while typical lifetimes for excitons in single selectively-grown micropyramidal InGaN QDs are found to be ~0.4 ns. The shorter exciton recombination lifetime in selectively-grown QDs is believed to be due to a stronger coupling of these QDs to the underlying quantum well. Temporal fluctuations (on a timescale of seconds) in the energy, intensity and FWHM of µ-PL peaks arising from the recombination of excitons in single self-assembled InGaN QDs are observed. These are attributed to transient Stark shifts induced by a fluctuating local charge distribution as carriers become trapped in defect states in the vicinity of the QDs. Time-integrated power-dependent measurements are used to demonstrate the presence of biexciton states in single self-assembled InGaN QDs. The exciton–biexciton energy splitting is found to be ~41 meV, in agreement with values predicted by theoretical calculations. Time-resolved studies of the biexciton and exciton decay curves reveal a coupling as the exciton population is refilled by biexciton decays. The biexciton lifetime is found to be ~1.4 ns, compared to an exciton lifetime of ~1.0 ns. Lateral electric fields are applied to a single self-assembled InGaN QD using aluminium electrodes lithographically defined on the sample surface. Application of fields of the order of ~0.17 MVcm-1 is found to cause both a red-shift and a reduction in the intensity of the exciton recombination peak in the µ-PL spectrum.
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Hatami, Fariba. "Indium phosphide quantum dots in GaP and in In 0.48 Ga 0.52 P." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2002. http://dx.doi.org/10.18452/14873.
Full textAbstract:
Im Rahmen dieser Arbeit wurden selbstorganisierte, verspannte InP-Quantenpunkte mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und optische Eigenschaften untersucht. Die Quantenpunkte wurden sowohl in InGaP-Matrix gitterangepasst auf GaAs-Substrat als auch in GaP-Matrix auf GaP-Substrat realisiert. Die starke Gitterfehlanpassung von 3,8% im InP/InGaP- bzw. 7,7% im InP/GaP-Materialsystem ermöglicht Inselbildung mittels des Stranski-Krastanow-Wachstumsmodus: Ab einer kritischen InP-Schichtdicke findet kein zweidimensionales, sondern ein dreidimensionales Wachstum statt. Die kritische Schichtdicke wurde mit etwa 3 Monolagen für das InP/InGaP- und mit etwa 1,8 Monolagen für das InP/GaP-System bestimmt. Die strukturellen Untersuchungen zeigen, dass InP Quantenpunkte in GaP im Vergleich zu solchen in InGaP größer sind und stärker zum Abbau von Verspannung tendieren. Die in InGaP-Matrix eingebettete InP-Quantenpunkte zeigen sehr ausgeprägte optische Emissionen, die, in Abhängigkeit von den Wachstumsparametern, im Bereich von 1,6 bis 1,75eV liegen. Die Emissionslinie wird der strahlenden Rekombination von in den Quantenpunkten lokalisierten Elektronen und Löchern zugeordnet. Dies wird auch durch das Bänderschema bestätigt, das mit Hilfe der Model-Solid-Theorie modelliert wurde. Darüber hinaus weist die Lebensdauer der Ladungsträger von einigen hundert Pikosekunden darauf hin, dass die InP/InGaP Quantenpunkte vom Typ I sind. Zusätzlich zu den optischen Eigenschaften wurde die Anordnung von dicht gepackten InP-Quantenpunkten in und auf InGaP mittels zweidimensionaler Fourier-Transformation der Daten aus der Atomkraftmikroskopie, Transmissionelektronmikroskopie und diverser Röntgen-Streuexperimente untersucht sowie die planaren und vertikale Ordnungseffekte der Quantenpunkte studiert. Die Untersuchungen zeigen, dass die Ordnung der Quantenpunkte sowohl hinsichtlich ihrer Packungsdichte als auch ihrer Orientierung mit wachsender InP-Bedeckung zunimmt. Darüber hinaus wurde die Verspannungsverteilung in den InP/InGaP-Quantenpunkten mit Hilfe von diffuser Röntgen-Streuung in Verbindung mit kinematischen Simulationen studiert und eine asymmetrische Form der Quantenpunkte festgestellt, die auch Ursache für die gemessene Polarisationsanisotropie der Photolumineszenz sein kann. Die in GaP-Matrix eingebetteten InP-Quantenpunkte wurden im Rahmen dieser Arbeit erstmals erfolgreich auf ihre aktiven optischen Eigenschaften hin untersucht. Sie zeigen eine optische Emission zwischen 1,9 und 2 eV im sichtbaren Bereich. Diese strahlende Rekombination wird ebenfalls dem direkten Übergang zwischen Elektronen- und Löcherzuständen zugeordnet, die in den InP Quantenpunkten lokalisiert sind. Auch Photolumineszenzmessungen unter mechanischem Druck weisen darauf hin, dass es sich in diesem System hauptsächlich um einen direkten räumlichen Übergang handelt. Dieses Ergebnis wird dadurch untermauert, dass die Lebensdauer der Ladungsträger im Bereich von etwa 2 ns liegt, was nicht untypisch für Typ-I-Systeme ist. Die Ergebnisse für zweidimensionale, in GaP eingebettete InP-Schichten zeigen im Gegensatz zu den Quantenpunkten, dass die strahlende Rekombination in InP/GaP Quantentöpfen aufgrund eines indirekten Übergangs (sowohl in Orts- als auch in Impulsraum) zwischen Elektronen- und Löcherzuständen erfolgt. Die optischen Emissionslinien liegen für Quantentöpfe im Bereich von 2,15 bis 2,30eV. Die nachgewiesene sehr lange Lebensdauer der Ladungsträger von etwa 20ns weist weiter darauf hin, dass die Quantentöpfe ein Typ-II-System sind. Nach Modellierung des Bänderschemas für das verspannte InP/GaP-System und Berechnung der Energieniveaus von Löchern und Elektronen darin mit Hilfe der Effektive-Masse-Näherung in Abhängigkeit von der InP-Schichtdicke zeigt sich ferner, dass für InP-Quantentöpfe mit einer Breite kleiner als 3nm die Quantisierungsenergie der Elektronen so groß ist, dass der X-Punkt in GaP energetisch tiefer liegt als der Gamma-Punkt in InP. Dieser Potentialverlauf führt dazu , dass die Elektronen im X-Minimum des GaP lokalisieren, während die Löcher in der InP-Schicht bleiben. Optische Untersuchungen nach thermischer Behandlung der Quantenpunkte führen sowohl im InP/InGaP- als auch im InP/GaP-System zur Verstärkung der Lumineszenz, die bis zu 15 mal internsiver als bei unbehandelten Proben sein kann. Insgesamt zeigt diese Arbeit, dass InP-Quantenpunkte durch ihre optischen Eigenschaften sehr interessant für optoelektronische Anwendungen sind. Die Verwendung von durchsichtigem GaP (mit einer größeren Bandlücke und kleineren Gitterkonstante im Vergleich zu GaAs und InGaP) als Matrix und Substrat hat nicht nur den Vorteil, dass die InP-Quantenpunkte hierbei im sichtbaren Bereich Licht emittieren, sondern man kann in der Praxis auch von einer hochentwickelten GaP-basierten LED-Technologie profitieren. Hauptergebnis dieser Arbeit ist, dass die in indirektes GaP eingebetteten InP-Quantenpunkte aktive optische Eigenschaften zeigen. Sie können daher als aktive Medien zur Realisierung neuartiger effizienter Laser und Leuchtdioden verwendet werden.The growth and structural properties of self-assembled InP quantum dots are presented and discussed, together with their optical properties and associated carrier dynamics. The QDs are grown using gas-source molecular-beam epitaxy in and on the two materials InGaP (lattice matched to GaAs) and GaP. Under the proper growth conditions, formation of InP dots via the Stranski-Krastanow mechanism is observed. The critical InP coverage for 2D-3D transition is found to be 3ML for the InP/ InGaP system and 1.8ML for the InP/GaP system. The structural characterization indicates that the InP/GaP QDs are larger and, consequently, less dense compared to the InP/ InGaP QDs; hence, InP dots on GaP tend to be strain-relaxed. The InP/ InGaP QDs tend to form ordered arrays when InP coverage is increased. Intense photoluminescence from InP quantum dots in both material systems is observed. The PL from InP/GaP QDs peaks between 1.9 and 2 eV and is by about 200 meV higher in energy than the PL line from InP/ InGaP QDs. The optical emission from dots is attributed to direct transitions between the electrons and heavy-holes confined in the InP dots, whereas the photoluminescence from a two-dimensional InP layer embedded in GaP is explained as resulting from the spatially indirect recombination of electrons from the GaP X valleys with holes in InP and their phonon replicas. The type-II band alignment of InP/GaP two-dimensional structures is further confirmed by the carrier lifetime above 19 ns, which is much higher than in type-I systems. The observed carrier lifetimes of 100-500 ps for InP/ InGaPQDs and 2 ns for InP/GaP QDs support our band alignment modeling. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP QDs at normal pressure, but indicate that they become type-II under hydrostatic pressures of about 1.2 GPa and are consistent with an energy difference between the lowest InP and GaP states of about 31 meV. Exploiting the visible direct-bandgap transition in the GaP system could lead to an increased efficiency of light emission in GaP-based light emitters.
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Nakagawara, Tanner A. "Optical Spectroscopy of Wide Bandgap Semiconductor Heterostructures and Group-IV Alloy Quantum Dots." VCU Scholars Compass, 2017. https://scholarscompass.vcu.edu/etd/5195.
Full textAbstract:
Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to near-IR optoelectronic applications. While bulk Ge is an indirect gap material, QD confinement allows enhanced direct transitions, and alloying with Sn improves transition oscillator strengths. Temperature dependent steady-state and time-resolved photoluminescence reveal relaxation pathways involving bright/dark excitons and surface states in Ge1-xSnx QDs, showing their great potential for future use.
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Ariyawansa, Gamini. "Semiconductor Quantum Structures for Ultraviolet-to-Infrared Multi-Band Radiation Detection." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/17.
Full textAbstract:
In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at ∼ 6.25, ∼ 10.5 and ∼ 23.3 µm. In T-QDIP structures, photoexcited carriers are selectively collected from InGaAs QDs through resonant tunneling, while the dark current is blocked using AlGaAs/InGaAsAlGaAs/ blocking barriers placed in the structure. A two-color T-QDIP with photoresponse peaks at 6 and 17 µm operating at room temperature and a 6 THz detector operating at 150 K are presented. Bi-QDIPs consist of two layers of InAs QDs with different QD sizes. The detector exhibits three distinct peaks at 5.6, 8.0, and 23.0 µm. A typical HIWIP/HEIWIP detector structure consists of a single (or series of) doped emitter(s) and undoped barrier(s), which are placed between two highly doped contact layers. The dual-band response arises from interband transitions of carriers in the undoped barrier and intraband transitions in the doped emitter. Two HIWIP detectors, p-GaAs/GaAs and p-Si/Si, showing interband responses with wavelength thresholds at 0.82 and 1.05 µm, and intraband responses with zero response thresholds at 70 and 32 µm, respectively, are presented. HEIWIP detectors based on n-GaN/AlGaN show an interband response in the UV region and intraband response in the 2-14 µm region. A GaN/AlGaN detector structure consisting of three electrical contacts for separate UV and IR active regions is proposed for simultaneous measurements of the two components of the photocurrent generated by UV and IR radiation.
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Tourbot, Gabriel. "Croissance par épitaxie par jets moléculaires et détermination des propriétés structurales et optiques de nanofils InGaN/GaN." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00745125.
Full textAbstract:
Ce travail a porté sur la croissance par épitaxie par jets moléculaires de nanofils InGaN/GaNsur Si (111).Le dépôt d'InGaN en conditions riches azote sur des nanofi ls GaN pré-existants permet deconserver la structure colonnaire. La morphologie des nanofi ls s'est révélée dépendre fortementdu taux d'indium utilisé dans les fl ux. A faible taux nominal d'indium celui-ci se concentre dansle coeur du fi l, ce qui résulte en une structure coeur-coquille InGaN-GaN spontanée. Malgré letaux d'indium important dans le coeur, la relaxation des contraintes y est entièrement élastique.La luminescence est dominée par des eff ets de localisation de porteurs qui donnent lieu à unebonne tenue en température. Au contraire, à plus fort flux nominal d'indium il y a relaxationplastique des contraintes et aucune séparation de phase n'est observée.L'étude d'insertions InGaN permet de con firmer que, malgré le faible diamètre des nano fils, lacroissance est dominée par la nécessité de relaxation des contraintes, et la nucléation de l'InGaNse fait sous la forme d'un îlot facetté. Il en résulte une incorporation préférentielle de l'indiumau sommet de l'îlot, et donc un gradient radial de composition qui se développe en structurecoeur-coquille spontanée au cours de la croissance.Au contraire, la croissance en conditions riches métal entraîne une croissance latérale trèsimportante, nettement plus marquée dans le cas d'InGaN que de GaN : l'indium en excès a une ffet surfactant qui limite la croissance axiale et favorise la croissance latérale.
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Chuang, Kuei-ya, and 莊貴雅. "Vertically Coupled InGaAs Quantum Dots." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/42029276965198067316.
Full textAbstract:
博士國立中山大學
光電工程學系研究所
100
We have investigated the polarization effect of optical process in the vertically coupled InGaAs quantum dots (QDs) triple layers by varying the thickness of GaAs spacer layer. The TE/TM ratio for the ground state emission decreases from near 4 to 1.5 as the spacer thickness (d) decreases from 40 nm to 5 nm. And, the TE polarization (in-plane polarization) is anisotropic with a stronger component along [01-1] direction. P-type modulation doping further decreases the TE/TM ratio to r = 1.2 for the strong vertical coupling QDs structure of 5-nm spacer. Then, using a cross-sectional transmission electron microscopy directly reveals the InGaAs QDs of 5-nm spacer well aligned along the growth direction. From the electroluminescence (EL) and differential absorption (Δα) experiments, the higher optical gain and absorption change for the excited state suggest that the e2-hh transition has higher oscillator strength for the vertically coupled QDs. We also investigate for the triple-layer InGaAs vertically coupled quantum dots (VCQDs) by adding modulation doping (MD) in the 5-nm GaAs spacer layers. In addition to the QDs fundamental and excited transitions, a coupled-state transition is observed for the VCQDs. For the VCQDs of p-type MD, the optical transitions at ground state and coupled state are enhanced by the improvement of hole capture for the valence subbands. For the VCQDs of n-type MD, the main absorption change occurs at the coupled state, consistent with the dominant emission peak observed in EL spectra. For GaAs-based solar cells application, in order to enhance absorption at infrared range for GaAs-based solar cells, multi-stack InGaAs VCQDs of 5-nm GaAs spacers are grown in the active region. Due to the strong vertical coupling between QDs would promote quantum efficiency. We have investigated the photovoltaic response for the solar cells by increasing the layer numbers of VCQDs. The device of nine-layer InGaAs VCQDs shows an enhanced short-circuit current density (Jsc) of 10.5 mA/cm2. The value is increased by 42% compared to GaAs reference device. However, the open-circuit voltage (Voc) is reduced from 0.88 V to 0.54 V. Then, we change the GaAs spacer thickness of coupled In0.75Ga0.25As QDs, and investigated the effects on photovoltaic response. For the sample of d =10 nm shows the best performance of current density (Jsc~24 mA/cm2) and efficiency (h~10.6%). The Jsc and h are increases by 55% and 112% more than the device without QDs, respectively.
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Hsing, Jin-Yuan, and 邢晉源. "InGaAs Quantum Dots Microdisk Lasers." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/rbc3pd.
Full textAbstract:
博士國立中山大學
光電工程學系研究所
101
This thesis describes the fabrication of microdisk lasers that contain gain materials with InGaAs quantum dots. The spontaneous emissions from the specific sizes of quantum dots are enhanced by the whispering gallery modes (WGMs) of the microdisk cavity. First, the lasing wavelength range of InGaAs QDs microdisk cavities is examined. A series of microdisk lasers with diameters that vary in steps of 10 nm from 1.62 μm to 1.86 μm is used, which have a first-order WGM with m=8 enhance the ground state emission of quantum dots in the wavelength range from 1180 nm to 1263 nm. The width of continuous wavelength tuning range is about 80 nm. The lowest threshold power among these QD-containing microdisk lasers is only about 13 μW with a spontaneous emission factor β= 0.674. Second, the bonding and anti-bonding modes of vertically-coupled double microdisk cavities are investigated by utilizing the optical coupling between them. Vertically-coupled double microdisk lasers with three gaps of 100, 200, and 480 nm were fabricated. Room-temperature lasing spectra of the vertically-coupled double microdisks with three gaps but similar diameters around 1.9 μm were obtained. The threshold powers for gaps of 100 nm and 200 nm were approximately 70 μW and 50 μW, respectively. These devices are attractive for use in multiple terahertz light sources based on frequency difference generation. Third, a QD-containing disk cavity is placed on an AlAs/GaAs DBR substrate to develop a mechanically stable current injection structure. The thermo-optical coefficients of AlAs and GaAs for wavelengths around 1200 nm were determined to be 2.2105×10-4 nm/K and 2.8789×10-4 nm/K, respectively. Three emission peaks at 1040 nm, 1090 nm, and 1146 nm were obtained from a DBR-supporting microdisk laser with diameter D=2 μm at T=110 K. These emission peaks were also verified as the first-order WGMs with m=12, 13, and 14. Finally, the emission behaviors of microdisk lasers at T=80 K when a metal nanoparticle is on the top surface of the microdisk cavity are studied. Without the metal NP, the threshold power of the microdisk laser is around 635 μW for the first-order WGM with m=22 at λ=1160 nm. With the metal NP, the threshold power of the microdisk laser is increased to 2.45 mW for the first-order WGM with m=24 at λ=1098 nm.
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Tzeng, Kai-Di, and 曾凱迪. "Photovoltaic response of coupled InGaAs quantum dots." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/11947239873527696489.
Full textAbstract:
碩士國立中山大學
光電工程學系研究所
99
The purpose of our research is growing the coupled InGaAs quantum dots on the n-type substrate by molecular beam epitaxy in laboratory, and we choose 5,10 and 15 nanometers to be the thicknesses of GaAs spacer between the quantum dots layer. Due to the couple effect, we hope to realize the theorem of intermediate band proved by Luque and Marti. We measure the characteristic of samples by electroluminescence spectra, photoelectric current spectra, electrical absorption spectra and electro reflectance spectra in laboratory; moreover, we acquire the basic parameters of solar cell by AM1.5G for analyzing. From the basic parameters of solar cell, we know that the quantum dots can enhance the photocurrent by absorbing additional photons , however, the strain caused by quantum dots would decay the open voltage seriously, so that the efficiency always under the baseline. Each efficiency of 9-stack QDs are 4.3%(c494),5.1%(c519),5.3% (c520),and each efficiency of 9-stack Dwells are 3.9%(c524),4.2%(c525),4.7%(c526), and 10-stack QDs(5nm) is 2.9%(c514),and 12-stack QDs(10nm) is 4.48%(c538),and 12-stack QDs(15nm) is 5.89%. The break through of this paper is that the efficiency of c529（VOC=0.64V,JSC=11.97mA/cm2,FF=67%,η=5.89%）is higher than GaAs（VOC =0.87 V, JSC =7.4 mA/cm2,FF=72.3%,η=5.6%）,and we attribute this performance to its good quality of miniband, because the current can be enhanced a lot, and it will make up for the lose of open voltage and filling factor, so that the efficiency can be higher than GaAs baseline.
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Tzeng, Te-En, and 曾德恩. "InGaAs Quantum Dots grown by Molecular Beam Epitaxy." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/90197754181344616147.
Full textAbstract:
碩士國立中山大學
光電工程學系研究所
99
In this thesis, we have reported the MBE growth, design, and fabrication of the InGaAs quantum dots (QDs) laser/semiconductor optical amplifier, broadband QDs structure, coupled double cavity structure for terahertz emission on GaAs substrate. The emission wavelengths of the strain-induced S-K growth mode QDs structures are adjusted through the composition of QDs and strain-compensated capping layer. Also, the technique of growing high quality InGaAs QDs with solid source molecular beam epitaxy has been established and characterized by double crystal X-ray diffraction, transmission electron microscopy, photoluminescence, electroluminescence measurements. For 1.3μm QDs laser samples, ridge waveguide lasers of the Fabry-Perot (FP) type are fabricated by wet-etching process. From the QDs laser L-I curve, the e2-hh2 transition at λ =1160nm have larger optical gain than e1-hh1 transition at λ =1220nm. The FP laser with 0.6μm cavity length shows a lasing peak of 1160nm at threshold. As the cavity length increase to 2μm, the lasing peak red shift to 1220nm (closed to ground state emission wavelength). This energy band gap transition phenomenon is obvious especially in the QDs laser with quantum well (QW) structure. When the injection current increase, two lasing peaks at λ= 1160 and 1175nm are observed sequentially. This unique lasing behavior is shown to be consistent with carriers localized in noninteracting dots. For the application of 1.3μm light source, we optimum the growth condition for different needs in optical coherent tomography (OCT) light source, tandem solar cell, terahertz emission light source, etc. For the super luminescence diode (SLED) in OCT, we design multi-stacked asymmetric QDs structure (AMQD), QDs in the well structure (DWell), Dwell with p-doping in well structure to investigate the carrier recombination condition and bandwidth. Comparing with 5 structures in this study, the Dwell with p-doping in well structure has a maximum EL bandwidth exceed 198nm. The large bandwidth is attributed to the QW which increases the carrier capture rate and the p-doping which provide the efficient holes in valance band. This structure provides an excellent SLED light source solution to replace the existing program. For the tandem solar cell, we use the multi-stack QDs to compose broadband absorption in 1eV range. In order to avoid the degradation in the open circuit voltage, we use InGaAs QW to reduce the QDs strain. We observed the doping effect on the built in field through the photo-reflectance measurements. For the better photocurrent collection, we use p-doping in the QW to increase the built-in field intensity to obtain higher efficiency. For the terahertz emission, the QDs embedded in coupled double-cavity structures with an AlAs/GaAs intermediate distributed Bragg reflector (DBR) are grown on GaAs substrates. Two emission peaks at 1180, 1206 nm from the QDs corresponding to the coupled double-cavity resonant modes are observed in the high reflection band. The frequency differences for the two resonant coupled modes are of 5.5 terahertz, and have been successfully controlled by changing the pair numbers for the intermediate DBR. In addition, we have grown the InGa(Al)As nanostructures on InP substrate. The lattice constant difference between InGaAs and InP is relatively smaller compare with GaAs substrate, and it will be more challenge in epitaxial growth. After we investigate the strain, surface morphologies, optical properties for the nanostructures, we find the group III elements play an important role in the morphologies. Wire formation is attributed by the enhanced adatom diffusion length in the stepped surface front along [0-11] direction for the presence of Ga both in the nanostructure and buffer layer. Finally, we established QDs, Qwires database for the valuable new possibilities for designing new and original structures.
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Wei, Sun-Yong, and 魏孫詠. "Raman Spectroscopy on InGaAs Quantum Dots in Coupled Cavity." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/10397759345788956392.
Full textAbstract:
碩士國立中興大學
光電工程研究所
104
The epitaxy InGaAs quantum dot of molecular beam epitaxy on the Bragg reflector is utilized for measuring Raman Spectroscopy and analyzing the relative signal strength and wave number position(GaAs :To mode and Lo mode、InGaAs QDs). First, InGaAs quantum dots present the characteristic of tunable band gap that the contents of In and Ga are changed for growing the stack layer with different band gap so as to measure the Raman spectra of In and Ga under distinct proportion. As a single-layer quantum dot shows small signal strength, we try surface-enhanced Raman scattering (SERS)to coat a thin layer of Au (about 10nm) on the sample, with thermal evaporator, for annealing. Gold nanoparticles would be self-assembly method to reinforce the signal strength, or gold nanoparticles are directly spin coated on the sample. The result reveals slightly different measurement results of InGaAs under different dimension. Finally, the Raman spectra of the coupled cavity sample are measured. The top and the bottom are connected with a Bragg reflector and two pairs of quantum dots and a set of Bragg reflector is inserted in the middle. The transmission shows that the transmission peak coupled with 13.5 pairs of DBR and 23.5 pairs of DBR is too close to separate two transmission peak, while inserting 6.5 pairs could improve such a problem. Furthermore, micro-photoluminescence and Raman spectra are used for cross-analyzing the quantum dot Raman spectra effect as the region. It is measured that the quantum dot under vertical coupling appears larger Raman signals than the single-layer quantum dot. Besides, the Raman spectra reveal that the back-end process would damage the sample structure because of high temperature. It is expected to introduce Raman spectra as the rough estimated coupled cavity sample structrure.