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Journal articles on the topic 'InGaAs Linear Detector Arrays'

Author: Grafiati

Published: 6 September 2023

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1

Deng, Honghai, Zhiliang Wang, Haibao Shao, Yi Li, Xue Li, and Haimei Gong. "Performance of Dual-Band Short-Wave Infrared InGaAs Focal-Plane Arrays with Interference Narrow-Band Filter." Electronics 8, no. 12 (December 13, 2019): 1537. http://dx.doi.org/10.3390/electronics8121537.

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In this work, we fabricated dual-band 800 × 2 short-wave infrared (SWIR) indium gallium arsenide (InGaAs) focal-plane arrays (FPAs) using N-InP/i-In0.53Ga0.47As/N-InP double-heterostructure materials, which are often applied in ocean-color remote sensing. Using narrow-band interference-filter integration, our detector-adopted planner structure produced two detection channels with center wavelengths of 1.24 and 1.64 μm, and a full-width half-maximum (FWHM) of 0.02 μm for both channels. The photoelectric characteristics of the spectral response, modulation transfer function (MTF), and detectability of the detector were further analyzed. Our FPAs showed good MTF uniformity with pixel operability as high as 100% for each 800 × 1 linear array. Peak detectivity reached 4.39 × 1012 and 5.82 × 1012 cm·Hz1/2/W at 278 K, respectively, and response nonuniformity was ideal at 2.48% and 2.61%, respectively. As a final step, dual-band infrared detection imaging was successfully carried out in push-broom mode.

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ZHU, Yao-Ming, Yong-Fu LI, Xue LI, Heng-Jing TANG, Xiu-Mei SHAO, Yu CHEN, Hong-Hai DENG, Peng WEI, Yong-Gang ZHANG, and Hai-Mei GONG. "Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination." JOURNAL OF INFRARED AND MILLIMETER WAVES 31, no. 1 (March 23, 2012): 11–14. http://dx.doi.org/10.3724/sp.j.1010.2012.00011.

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3

Kumar, Saurabh, Bharadwaj Amrutur, and Sundarrajan Asokan. "Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware." Review of Scientific Instruments 89, no. 2 (February 2018): 025102. http://dx.doi.org/10.1063/1.5022548.

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4

Zhang Xiaoyu, 张笑宇, 王凤香 Wang Fengxiang, 郭颖 Guo Ying, 王文娟 Wang Wenjuan, 罗永锋 Luo Yongfeng, 武文 Wu Wen, 侯佳 Hou Jia, et al. "基于InGaAs单光子探测器的线阵扫描激光雷达及其光子信号处理技术研究." Infrared and Laser Engineering 52, no. 3 (2023): 20220474. http://dx.doi.org/10.3788/irla20220474.

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5

Oehme, Michael, Zili Yu, Maurice Wanitzek, Steffen Epple, Lena Schad, Michael Hack, Joachim Burghartz, Daniel Schwarz, and Mathias Kaschel. "Monolithic Integration of Gesn on Si for IR Camera Demonstration." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1169. http://dx.doi.org/10.1149/ma2022-02321169mtgabs.

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Due to the development of cost-efficient detector technologies in the NIR (Near Infrared), new areas of application are constantly being addressed. This affects autonomous driving, where LiDAR (Light Detection and Ranging) systems with better eye safety are being developed, as well as low-cost night vision cameras. Another area of application is NIR spectroscopy, e.g. in the areas of food monitoring, environmental research or medical technology. The increasing need for portable, low-cost analysis devices, for example for "on-site" measurements or for everyday life, is driving the development of highly miniaturized and low-cost lab-on-a-chip systems. The NIR detectors and NIR cameras available on the market are primarily based on materials from group III/V compound semiconductors, e.g. InGaAs. However, the CMOS (Complementary Metal Oxide Semiconductor) standard process cannot be used for the production of this technology, which significantly increases the cost factor and thus limits its use on the market. A promising alternative is offered by group IV based detectors, in particular Ge and GeSn detectors, which can be monolithically integrated on a Si substrate. As a result, such detector systems can be processed much more cost-efficiently with CMOS compatible standard technology. The NIR absorption properties are also comparable to III/V components. This paper reports on the monolithic integration of Ge and GeSn detector arrays on Si substrates for the realization of a camera system. The entire system consists of a photonic chip, a readout chip and a standard microcontroller, which is connected to a laptop via USB. The SNR (signal-to-noise ratio) is an important parameter for such an integrated system. The quantum efficiency of each individual pixel sensor has to be maximized and a high fill factor per pixel is aimed for. A particularly high fill factor is achieved here with optical light coupling via the substrate back-side, since the front-side metallization does not interfere with the optical coupling area. Furthermore, the metallization acts then as a mirror, the light thus passes through the absorption area twice and leads to a higher quantum efficiency. However, the main obstacle of Ge and GeSn, compared to III/V devices, is the higher intrinsic charge carrier concentration, which leads to a significantly higher dark current. A possible solution is the zero bias operation of the detector at the expected dark current minimum. The dark current is 3 orders of magnitude smaller at 0 V compared to an operating point at -1 V. Another criterion for the circuit is that a signal range or photocurrent supports a wide dynamic range (between nA and µA). For this purpose, the photocurrent is fed into the evaluation electronics via a triple cascaded current mirror. The measured value is output to a 12-bit ADC (Analog Digital Converter) integrated in the microcontroller via a current/voltage converter, two buffers and a sample hold element. With the help of additional multiplexers, the circuit can be used to read out several detectors and thus address a pixel matrix. We report on the fabrication of the photonic chip, which is carried out using CMOS compatible processes and MEMS (Micro-Electro-Mechanical System) processes in combination with an epitaxial growth of the active device structures. The photonic chip is based on 150 mm Si substrates, which were prepared first with multiple ion implantation steps. The active pin detector layers, consisting of Si and Ge or GeSn, were grown by means of molecular beam epitaxy. Afterwards, deep trenches were now etched between the detectors in a MEMS process to minimize crosstalk between neighboring pixels. The detectors were structured then using CMOS processes, and the backside is polished or structured. Finally, a two layer frontside-metallization is applied for the contacts. We demonstrate the functionality of both two-dimensional and linear detector arrays and show possible applications such as NIR cameras or NIR spectrometers.

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6

Arnob, Md Masud Parvez, Hung Nguyen, Zhu Han, and Wei-Chuan Shih. "Compressed sensing hyperspectral imaging in the 09–25 μm shortwave infrared wavelength range using a digital micromirror device and InGaAs linear array detector." Applied Optics 57, no. 18 (June 12, 2018): 5019. http://dx.doi.org/10.1364/ao.57.005019.

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7

LI, SHENG S. "MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 761–801. http://dx.doi.org/10.1142/s0129156402001691.

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Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3–5 μm mid-wavelength infrared (MWIR) and 8–12 μm long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: λc > 14 μm) imaging array applications in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, multi-color or broadband QWIPs required for advanced IR sensing and imaging applications have also emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4-color) QWIPs with multi-stack quantum wells and voltage-tunable asymmetrical coupled quantum well structures for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated recently. The triple-coupled (TC-) QWIP employs the quantum confined Stark effect to tune the peak detection wavelength by the applied bias voltage, A typical single-color QWIP exhibits a rather narrow spectral bandwidth of 1 to 2 μm. For certain applications, such as spectroscopy, sensing of a broader range of infrared radiation is highly desirable. Using the stacked quantum wells with different well width and depth, the digital-graded superlattice barrier (DGSLB) or the linear-graded barrier (LGB) structures, broadband (BB-) QWIPs covering the 8–14 μm atmospheric spectral window have been reported recently. In this chapter, the basic operation principles of a QWIP, and the design, fabrication, and characterization of multi-color and broadband QWIPs based on the GaAs/AlGaAs and InGaAs/AlGaAs material systems for the MW/LW/VLWIR applications are depicted.

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8

Yermolayev, D. M., E. A. Polushkin, S. Yu Shapoval, V. V. Popov, K. V. Marem’yanin, V. I. Gavrilenko, N. A. Maleev, et al. "Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors." International Journal of High Speed Electronics and Systems 24, no. 01n02 (March 2015): 1550002. http://dx.doi.org/10.1142/s0129156415500020.

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Detection of terahertz radiation by GaAs transistor structures has been studied experimentally. The two types of samples under study included dense arrays of HEMTs and large-apertures detectors. Arrays consisted of parallel and series chains with asymmetric gate transistors for enhanced photoresponse on terahertz radiation. We investigated two types of wide-aperture detectors: grating gate detector, and single gate detector with bow-tie antenna. Wide-aperture detectors were symmetrical. Studies of transistor chains have shown that two essential features for this type of detector are the presence of asymmetry in the gate, and the type of connection between individual transistors themselves. Wide-aperture detectors have also been tested by narrow beams of terahertz radiation, which allows analyzing the role influence of individual parts of the detector for total sensitivity to terahertz excitation. The sensitivity and noise equivalent power of the detectors were evaluated.

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9

Moseley, A. J., M. Q. Kearley, R. C. Morris, J. Urquhart, M. J. Goodwin, and G. Harris. "8×8 flipchip assembled InGaAs detector arrays for optical interconnect." Electronics Letters 27, no. 17 (1991): 1566. http://dx.doi.org/10.1049/el:19910981.

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10

Yang, Bo, Yizhen Yu, Guixue Zhang, Xiumei Shao, and Xue Li. "Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures." Sensors 23, no. 14 (July 20, 2023): 6556. http://dx.doi.org/10.3390/s23146556.

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A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible–extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10–20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500–1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality.

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11

Kladkevich, M. D., V. B. Samoilov, and L. V. Shchedrina. "Image converters based on linear pyroelectric detector arrays." Measurement Techniques 35, no. 7 (July 1992): 836–40. http://dx.doi.org/10.1007/bf00977222.

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12

Zheng, Lixia, Huan Hu, Ziqing Weng, Qun Yao, Jin Wu, and Weifeng Sun. "Compact Active Quenching Circuit for Single Photon Avalanche Diodes Arrays." Journal of Circuits, Systems and Computers 26, no. 10 (March 2, 2017): 1750149. http://dx.doi.org/10.1142/s0218126617501493.

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A compact quenching circuit for Single Photon Avalanche Diode (SPAD) arrays is presented. The proposed circuit preserves the advantages of small area occupation and low power consumption, since it mainly adopts the junction capacitance of the detector to sense the avalanche current. The sensing time is now limited more by the detector rather than the circuit itself. Fabricated in TSMC standard 0.35[Formula: see text][Formula: see text]m CMOS process, the proposed circuit only occupies an area of 20[Formula: see text][Formula: see text]m[Formula: see text][Formula: see text][Formula: see text]31[Formula: see text][Formula: see text]m and can operate properly with the detector biased up to 5[Formula: see text]V above breakdown. The circuit functionality has been verified by experimental measurements, operating with 64[Formula: see text][Formula: see text][Formula: see text]64 InGaAs/InP single photon avalanche diode arrays for time-of-flight-based applications.

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13

Luu, Jane X., and Leaf A. Jiang. "Saturation effects in heterodyne detection with Geiger-mode InGaAs avalanche photodiode detector arrays." Applied Optics 45, no. 16 (June 1, 2006): 3798. http://dx.doi.org/10.1364/ao.45.003798.

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14

Li Xue, 李雪, 龚海梅 Gong Haimei, 唐恒敬 Tang Hengjing, 刘大福 Liu Dafu, 邵秀梅 Shao Xiumei, 危峻 Wei Jun, and 方家熊 Fang Jiaxiong. "1024×1 Elements Near-Infrared InGaAs Linear Focal Plane Arrays Assembly." Acta Optica Sinica 31, s1 (2011): s100305. http://dx.doi.org/10.3788/aos201131.s100305.

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15

Li, Xue, Songlei Huang, Yu Chen, Hengjing Tang, Xiumei Shao, Tao Li, Haimei Gong, and Jiaxiong Fang. "Noise characteristics of short wavelength infrared InGaAs linear focal plane arrays." Journal of Applied Physics 112, no. 6 (September 15, 2012): 064509. http://dx.doi.org/10.1063/1.4754579.

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16

Li, Weizhi, Zehua Huang, Jun Wang, Mingyu Li, Jun Gou, and Yadong Jiang. "Thermal crosstalk simulation and measurement of linear terahertz detector arrays." Infrared Physics & Technology 73 (November 2015): 73–77. http://dx.doi.org/10.1016/j.infrared.2015.09.002.

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17

LI, Xue, Xiu-Mei SHAO, Heng-Jing TANG, Yang WANG, Yu CHEN, and Hai-Mei GONG. "Inoperable pixels of 256×1 element linear InGaAs near-infrared focal plane arrays." JOURNAL OF INFRARED AND MILLIMETER WAVES 30, no. 5 (March 21, 2012): 409–11. http://dx.doi.org/10.3724/sp.j.1010.2011.00409.

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18

Mai, Zhihong, Xinrong Zhao, Fangqiao Zhou, and Wendong Song. "Infrared radiation detector linear arrays of high Tc superconducting thin films." Infrared Physics & Technology 38, no. 1 (February 1997): 13–16. http://dx.doi.org/10.1016/s1350-4495(96)00011-4.

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19

Agishev, Ravil, Zhenzhu Wang, and Dong Liu. "Atmospheric CW S-Lidars with Si/InGaAs Arrays: Potentialities in Real Environment." Remote Sensing 15, no. 9 (April 26, 2023): 2291. http://dx.doi.org/10.3390/rs15092291.

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The article proposes a methodology for analyzing the performance of S-lidars (S comes from Scheimpflug) as a new class of environmental remote sensors operating under conditions of wide variability of optical weather and sky background brightness. The novelty of the problem statement, the methods used and the results obtained are determined by their application to laser sensing systems with unconventional design principles and the consequent need to revise the traditional ways of assessing their potential capabilities. The research method is based on a dimensionless-parametric approach, which allows comparing phenomena and systems of different scales and combining complementary characteristics and parameters. Effects of the dimensionless optical weather factor on lidar potential are shown being investigated under various environmental conditions, from the clear atmosphere through haze and mist to fog when probing in Vis/SWIR spectral bands and using Si/InGaAs detector arrays. It is shown exactly how and to what extent the significant differences in their spectral sensitivity and internal noise parameters are susceptible to the wide spectral and energy variability of the sky background brightness observed at very different angles to the Sun. A detailed analysis of the two most important influencing factors within the system, “S-Lidar instrument + Optical weather + External background source”, taking into account their wide variability, allowed us to describe their joint nonlinear influence and, thus, to anticipate the imposed limitations. The proposed dimensionless-parametric concept for predicting the potential capabilities of S-lidars with Si/InGaAs arrays is aimed at expanding applications of this rapidly developing class of remote sensors in a wide variety of environments.

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20

JANG, KYOUNG WON, DONG HYUN CHO, SANG HUN SHIN, BONGSOO LEE, SOON-CHEOL CHUNG, GYE-RAE TACK, JEONG HAN YI, SIN KIM, and HYOSUNG CHO. "MEASUREMENTS OF HIGH ENERGY X-RAY DOSE DISTRIBUTIONS USING MULTI-DIMENSIONAL FIBER-OPTIC RADIATION DETECTORS." Modern Physics Letters B 22, no. 11 (May 10, 2008): 797–802. http://dx.doi.org/10.1142/s0217984908015401.

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In this study, we have fabricated multi-dimensional fiber-optic radiation detectors with organic scintillators, plastic optical fibers and photo-detectors such as photodiode array and a charge-coupled device. To measure the X-ray dose distributions of the clinical linear accelerator in the tissue-equivalent medium, we have fabricated polymethylmethacrylate phantoms which have one-dimensional and two-dimensional fiber-optic detector arrays inside. The one-dimensional and two-dimensional detector arrays can be used to measure percent depth doses and surface dose distributions of high energy X-ray in the phantom respectively.

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21

Subochev, Pavel, Maxim Prudnikov, Vladimir Vorobyev, Anna Postnikova, Egor Sergeev, Valeria Perekatova, Anna Orlova, Valentina Kotomina, and Ilya Turchin. "Wideband linear detector arrays for optoacoustic imaging based on polyvinylidene difluoride films." Journal of Biomedical Optics 23, no. 09 (May 22, 2018): 1. http://dx.doi.org/10.1117/1.jbo.23.9.091408.

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22

MacDougal, Michael. "Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators." Optical Engineering 50, no. 6 (June 1, 2011): 061011. http://dx.doi.org/10.1117/1.3579520.

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23

Li, Weizhi, Jun Wang, Jun Gou, Zehua Huang, and Yadong Jiang. "Fabrication and Characterization of Linear Terahertz Detector Arrays Based on Lithium Tantalate Crystal." Journal of Infrared, Millimeter, and Terahertz Waves 36, no. 1 (November 4, 2014): 42–48. http://dx.doi.org/10.1007/s10762-014-0115-7.

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24

Schwarz, Mathias, Andreas Buehler, and Vasilis Ntziachristos. "Isotropic high resolution optoacoustic imaging with linear detector arrays in bi-directional scanning." Journal of Biophotonics 8, no. 1-2 (April 15, 2014): 60–70. http://dx.doi.org/10.1002/jbio.201400021.

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25

Kim, Ho-Kyung. "Linear-Systems Analysis of Quantum Signal and Noise Transfers in Digital Detector Arrays." JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING 42, no. 6 (December 31, 2022): 451–61. http://dx.doi.org/10.7779/jksnt.2022.42.6.451.

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26

Jimenez, Jorge, and Antoni Grau. "Integration of an Optical Setup for the Characterization of Near-Infrared Detectors Used in Ground and Space-Based Astronomy." Engineering Proceedings 6, no. 1 (May 18, 2021): 68. http://dx.doi.org/10.3390/i3s2021dresden-10152.

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To make Europe competitive in the field of astronomical sensors and detectors, the main goal of this research is to provide the capability to manufacture high performance infrared focal plane arrays (FPA) devoted to scientific and astronomical ground and space telescope missions. This paper presents the main outcome of an international project with the highest standard of quality for this detector. The resulting detector is a sensor with a hybridized MCT (HgCdTe) epilayer on a CdZnTe substrate of 2 k × 2 k pixels and 15 μm of pixel pitch. On this framework, an optical setup has been developed at the IFAE optical laboratory with the capabilities to perform the characterization of a near-infrared (NIR) detector covering the range from 800 to 2500 nm. The optical setup is mainly composed of a power controlled quartz–halogen (QTH) lamp and an astigmatism-corrected Czerny–Turner monochromator with two diffraction gratings covering the detector wavelength range with a minimum resolution of ∼1 nm. A temperature stabilized gold-coated integration sphere provides a uniform and monochromatic illumination, while an InGaAs photodiode located at the north pole of the integration sphere is used to measure the radiant flux toward the detector. The whole setup is fully controlled by a Labview™ application and synchronized with the detector’s readout electronic (ROE).

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Hoogeveen, Ruud W. M., Ronald J. van der A, and Albert P. H. Goede. "Extended wavelength InGaAs infrared (1.0–2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere." Infrared Physics & Technology 42, no. 1 (February 2001): 1–16. http://dx.doi.org/10.1016/s1350-4495(00)00061-x.

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28

Vandermeiren, W., J. Stiens, G. Shkerdin, C. De Tandt, and R. Vounckx. "Lock-in thermo-electric detector arrays: thermal cross-talk prediction by non-linear model." Journal of Physics D: Applied Physics 44, no. 5 (January 13, 2011): 055101. http://dx.doi.org/10.1088/0022-3727/44/5/055101.

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Herrmann, K. H. "Infrared imaging with linear and matrix detector arrays: A challenge to semiconductor opto-electronics." Measurement 8, no. 1 (January 1990): 17–20. http://dx.doi.org/10.1016/0263-2241(90)90072-e.

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30

Lu, Wen Jia, Yi Wei, and Yi Fan Zhao. "Design and Linear Fitting of High Sensitive Optical Power Meter." Advanced Materials Research 171-172 (December 2010): 429–32. http://dx.doi.org/10.4028/www.scientific.net/amr.171-172.429.

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This paper introduces the hardware design of digital optical power meters and the algorithm flow.The power meter detector, with InGaAs-PIN photodiode and LTC6078,is used as a preamplifier for the measurement of micro-current;Silicon Laps C8051f410 are selected as the micro-controller for AD quantification and data processing, and the linear fitting of the measured data and standard data is completed in Matlab environment.After the comparison between the two measurement results,the proposed optical power meter adopts certain algorithm to compensate the deviation and improve the overall performance.The analyses of measured data show that:the optical power meter can be designed to precisely measure multi-wavelength with wide dynamic range and high sensitivity,support AC and DC dual power supply,and be portable.Therefore It also can be used both by university laboratories for teaching and by government department for construction monitoring and optical communications maintenance.

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Woodhouse, J. D., C. A. Wang, J. P. Donnelly, D. Z. Tsang, R. J. Bailey, D. E. Mull, K. Rauschenbach, and O. A. Popov. "Uniform linear arrays of strained-layer InGaAs-AlGaAs quantum-well ridge-waveguide diode lasers fabricated by ECR-IBAE." IEEE Journal of Quantum Electronics 31, no. 8 (1995): 1357–63. http://dx.doi.org/10.1109/3.400385.

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32

Zaluzec, N. J., and M. G. Strauss. "EELS parallel detection using 2-dimensional CCD array." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 662–63. http://dx.doi.org/10.1017/s0424820100105370.

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Conventional parallel detectors for Electron Energy Loss Spectroscopy (EELS) have been mainly based upon systems using linear photodiode arrays in a conjugate image plane of an electron spectrometer. We have developed a unique two dimensional charge coupled device (CCD) camera system which can be used as a detector for EEL spectroscopy and imaging, utilizing high sensitivity, high resolution CCD's, which are typically used in medial or astronomic imaging.The present detector system is based upon a Tektronics TK512M 512 x 512 pixel CCD array, (figure 1) which is optically coupled to a YAG:Ce single crystal scintillator. This CCD imaging system views an electron energy loss spectrum which is magnified by a quadrupole doublet lens attached to a Gatan 607 electron spectrometer on a Philips EM420 TEM as is illustrated in figure 2. The CCD controller, detector head electronics and electron optics were developed at Argonne specifically for high speed data acquisition and allow the recording of complete spectra in as short a time as 10 μsec or approximately 103 times faster than the typical 1024 pixel photodiode arrays’ thus allowing the potential for time resolved spectroscopy.

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Kumar, Indrajeet, and Ritesh Kumar Mishra. "An Investigation of Spectral Efficiency in Linear MRC and MMSE Detectors with Perfect and Imperfect CSI for Massive MIMO Systems." Traitement du Signal 38, no. 2 (April 30, 2021): 495–501. http://dx.doi.org/10.18280/ts.380229.

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In this paper, the performance of two linear detectors in multi-user (MU) multiple-input multiple-output (MIMO) systems is investigated. The uplink sum rate and lower bound of channel capacity is derived for both maximum-ratio combination (MRC) and minimum mean square error (MMSE) schemes considering imperfect and perfect channel state information (CSI) conditions. Results show that linear detector performance improves dramatically when the number of base station (BS) users is smaller than that of BS antennas. It is being demonstrated that in the case of imperfect CSI and the number of BS antennas in the conditions of perfect CSI the transmitting power of users can be decreased by the square root of the number of BS antennas. Simulation results show that the MMSE detector outperforms the MRC detector. The results indicated that the system's uplink sum rate is increased by using significantly larger antenna arrays as opposed to just one antenna system. The findings of the Monte-Carlo simulation are very close to the analytical results.

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Karcher, N., D. Richter, F. Ahrens, R. Gartmann, M. Wegner, O. Krömer, S. Kempf, C. Enss, M. Weber, and O. Sander. "SDR-Based Readout Electronics for the ECHo Experiment." Journal of Low Temperature Physics 200, no. 5-6 (April 30, 2020): 261–68. http://dx.doi.org/10.1007/s10909-020-02463-w.

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Abstract Due to their excellent energy resolution, the intrinsically fast signal rise time, the huge energy dynamic range, and the almost ideally linear detector response, metallic magnetic calorimeters (MMC)s are very well suited for a variety of applications in physics. In particular, the ECHo experiment aims to utilize large-scale MMC-based detector arrays to investigate the mass of the electron neutrino. Reading out such arrays is a challenging task which can be tackled using microwave SQUID multiplexing. Here, the detector signals are transduced into frequency shifts of superconducting microwave resonators, which can be deduced using a high-end software-defined radio (SDR) system. The ECHo SDR system is a custom-made modular electronics, which provides 400 channels equally distributed in a 4 to 8 GHz frequency band. The system consists of a superheterodyne RF frequency converter with two successive mixers, a modular conversion, and an FPGA board. For channelization, a novel heterogeneous approach, utilizing the integrated digital down conversion (DDC) of the ADC, a polyphase channelizer, and another DDC for demodulation, is proposed. This approach has excellent channelization properties while being resource-efficient at the same time. After signal demodulation, on-FPGA flux-ramp demodulation processes the signals before streaming it to the data processing and storage backend.

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Hirata, Christopher M., and Christopher Merchant. "Pixel Centroid Characterization with Laser Speckle and Application to the Nancy Grace Roman Space Telescope Detector Arrays." Publications of the Astronomical Society of the Pacific 134, no. 1041 (November 1, 2022): 115001. http://dx.doi.org/10.1088/1538-3873/ac99fe.

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Abstract The Nancy Grace Roman Space Telescope will use its wide-field instrument to carry out a suite of sky surveys in the near-infrared. Several of the science objectives of these surveys, such as the measurement of the growth of cosmic structure using weak gravitational lensing, require exquisite control of instrument-related distortions of the images of astronomical objects. Roman will fly new large-format (4 × 4 k) Teledyne H4RG-10 infrared detector arrays. This paper investigates whether the pixel centroids are located on a regular grid by projecting laser speckle patterns through a double slit aperture onto a non-flight detector array. We develop a method to reconstruct the pixel centroid offsets from the stochastic speckle pattern. Due to the orientation of the test setup, only x-offsets are measured here. We test the method both on simulations, and by injecting artificial offsets into the real images. We use cross-correlations of the reconstructions from different speckle realizations to determine how much of the variance in the pixel offset maps is signal (fixed to the detector) and how much is noise. After performing this reconstruction on 64 × 64 pixel patches, and fitting out the best-fit linear mapping from pixel index to position, we find that there are residual centroid offsets in the x (column) direction from a regular grid of 0.0107 pixels rms (excluding shifts of an entire row relative to another, which our speckle patterns cannot constrain). This decreases to 0.0097 pix rms if we consider residuals from a quadratic rather than linear mapping. These rms offsets include both the physical pixel offsets, as well as any apparent offsets due to crosstalk and remaining systematic errors in the reconstruction. We comment on the advantages and disadvantages of speckle scene measurements as a tool for characterizing the pixel-level behavior in astronomical detectors.

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Golenkov, A. G., A. V. Shevchik-Shekera, M. Yu Kovbasa, I. O. Lysiuk, M. V. Vuichyk, S. V. Korinets, S. G. Bunchuk, S. E. Dukhnin, V. P. Reva, and F. F. Sizov. "THz linear array scanner in application to the real-time imaging and convolutional neural network recognition." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 1 (March 9, 2021): 90–99. http://dx.doi.org/10.15407/spqeo24.01.090.

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Room temperature linear arrays (up to 160 detectors in array) from silicon metal- oxide-semiconductor field-effect transistors (Si-MOSFETs) have been designed for sub- THz (radiation frequency 140 GHz) close to real-time direct detection operation scanner to be used for detection and recognition of hidden objects. For this scanner, the optical system with aspherical lenses has been designed and manufactured. To estimate the quality of optical system and its resolution, the system modulation transfer function was applied. The scanner can perform real-time imaging with the spatial resolution better than 5 mm at the radiation frequency 140 GHz and contrast 0.5 for the moving object speed up to 200 mm/s and the depth of field 20 mm. The average dynamic range of real time imaging system with 160-detector linear array is close to 35 dB, when the sources with the output radiation power of 23 mW (IMPATT diodes) are used (scan speed 200 mm/s). For the system with 32-detector array, the dynamic range was about 48 dB and for the single-detector system with raster scanning 80 dB with lock-in amplifier. However, in the latter case for obtaining the image with the sizes 20×40 mm and step of 1 mm, the average scanning time close to 15 min is needed. Convolutional neural network was exploited for automatic detection and recognition of hidden items.

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Chaqmaqchee, Faten A. "Contact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers." ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 9, no. 2 (December 26, 2021): 112–16. http://dx.doi.org/10.14500/aro.10845.

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Geometrical contacts of a double mesa structure with 16 rows ×15 columns arrays of top emitting GaAs based 980 nm vertical cavity surface emitting lasers (VCSELs) are fabricated and characterized. In this paper, 5 strained In0.22Ga0.78As/Ga0.9AsP0.1 quantum wells (QWs) within λ/2 thick cavity have been employed. The top and the bottom epitaxially grown mirrors are based on the linear graded Al0.9Ga0.1As/GaAs distributed Bragg reflectors (DBRs) with 20.5 and 37 periods, respectively. Static parameters including threshold currents, rollover currents, maximum optical output power and wall-plug efficiency are extracted from light out power-current-voltage (LIV) of VCSELs with fixed oxide aperture diameter of ∅~ 6 μm and various mesa2 diameters. In addition, spectral emission for 980 nm VCSELs of oxide aperture between ∅~ 6 and 19 μm and with fixed ∅~ 6 μm and different bias currents are analyzed. The highest optical output power of around 33 dBm is observed at bias current of 0.8 mA for short−reach optical interconnect applications.

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Yan, Liangwen, Yue Yu, Sijung Hu, David Mulvaney, Panagiotis Blanos, Samah Alharbi, and Matthew Hayes. "Illumination Adaptation in a Multi-Wavelength Opto-Electronic Patch Sensor." Sensors 20, no. 17 (August 21, 2020): 4734. http://dx.doi.org/10.3390/s20174734.

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In capturing high-quality photoplethysmographic signals, it is crucial to ensure that appropriate illumination intensities are used. The purpose of the study was to deliver controlled illumination intensities for a multi-wavelength opto-electronic patch sensor that has four separate arrays each consisting of four light-emitting diodes (LEDs), the wavelength of the light generated by each array being different. The study achieved the following: (1) a linear constant current source LED driver incorporating series negative feedback using an integrated operational amplifier circuit; (2) the fitting of a linear regression equation to provide rapid determination of the LEDs driver voltage; and (3) an algorithm for the automatic adjustment of the output voltage to ensure suitable LED illumination. The data from a single centrally-located photo detector, which is capable of capturing all four channels of back-light in a time-multiplexed manner, were used to monitor heart rate and blood oxygen saturation. This paper provides circuitry for driving the LEDs and describes an adaptive algorithm implemented on a microcontroller unit that monitors the quality of the photo detector signals received in order to control each of the individual currents being supplied to the LED arrays. The study demonstrated that the operation of the new circuitry in its ability to adapt LED illumination to the strength of the signal received and the performance of the adaptive system was compared with that of a non-adaptive approach.

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Muir, Ryan D., Nicholas R. Pogranichney, J. Lewis Muir, Shane Z. Sullivan, Kevin P. Battaile, Anne M. Mulichak, Scott J. Toth, Lisa J. Keefe, and Garth J. Simpson. "Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging." Journal of Synchrotron Radiation 21, no. 5 (August 15, 2014): 1180–87. http://dx.doi.org/10.1107/s1600577514014167.

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Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment.

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Walker, Gordon A. H. "Limitations and Future of Reticon Detectors." Symposium - International Astronomical Union 132 (1988): 39–44. http://dx.doi.org/10.1017/s0074180900034744.

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Linear arrays of self-scanned silicon diodes have been used in astronomical spectroscopy for over a decade. With care in the flat-fielding and data reduction they can be calibrated to better than 0.1%. They are still the best detector for signal to noise levels >100 when continuous wide-band coverage is needed. CCD's should be capable of this spectrophotometric performance but, for the forseeable future, the lack of a large format and their high cost only make them competitive for spectroscopy of single spectral features or multiple echelle spectra.

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Foote, M. C., E. W. Jones, and T. Caillat. "Uncooled thermopile infrared detector linear arrays with detectivity greater than 10/sup 9/ cmHz/sup 1/2//W." IEEE Transactions on Electron Devices 45, no. 9 (1998): 1896–902. http://dx.doi.org/10.1109/16.711353.

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Pinaroli, G., S. Herrmann, S. Miryala, V. Manthena, G. W. Deptuch, G. A. Carini, A. E. Bolotnikov, et al. "Multi-channel front-end ASIC for a 3D position-sensitive detector." Journal of Instrumentation 17, no. 02 (February 1, 2022): C02011. http://dx.doi.org/10.1088/1748-0221/17/02/c02011.

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Abstract Arrays of 3D position-sensitive detectors (3DPSD), operating at room temperature and using cadmium zinc telluride (CZT) and thallium bromide (TIBr) sensors, are suitable for gamma-ray spectrometry in many applications. One detector configuration, the 3D position-sensitive Virtual Frisch-Grid detector (VFG), is particularly advantageous for integrating into large area arrays. The signals generated inside each detector of the array are captured with the anode, cathode and four pads that enable the reconstruction of the position and energy of the ionizing interaction by measurements of amplitude and timing of the signals. For these applications, a low-noise front-end ASIC has been developed, capable of processing bipolar signals (needed because of AC-coupling of certain electrodes). The ASIC can be coupled to an ADC in order to form a compound “waveform digitizer” capable of post-processing the analog signals and determining amplitude and timing information. This paper describes a 32-channel front-end ASIC that is suitable for reading out a 3 × 3 or 4 × 4 element matrix in the VFG configuration. Each channel is composed of a low-noise charge amplifier with an adaptive continuous reset feedback circuit suitable for both positive and negative charge, a first order shaper and a single-to-differential converter output stage. Voltage and current references are all internally generated by 10-bit DACs and the chip is fully controllable with the I2C communication protocol. The readout channel response has been verified using the implemented injection circuit. Linear behavior up to ∼75 ke± with the gain of ∼80 mV/fC, and up to ∼200 ke± with the gain of ∼30 mV/fC was demonstrated. In conclusion, the first test result waveforms using a 137Cs radioactive source on a 5 × 5 × 12 mm3 TIBr crystal are reported.

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Doody, Brian C., and Savvas G. Chamberlain. "An improved wide dynamic range silicon photodetector for integration in image sensor arrays." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 919–23. http://dx.doi.org/10.1139/p87-144.

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DALSA Inc., Waterloo, Ont., has designed, simulated, and tested a novel silicon photodetector offering several important performance advantages over current industry-standard devices. Currently available imaging devices offered by various manufacturers are typically sensitive to varying light intensity over three orders of magnitude in optical power, while DALSA's novel design offers a logarithmic response of greater than six orders of magnitude in light intensity.Designed to use to advantage the subthreshold effect of short-channel metal oxide semiconductor field effect transistors, the new device is readily integrated into large arrays featuring charge coupled device readout shift registers and metal oxide semiconductor support circuitry. Several devices designed by DALSA incorporating the new detector have been fabricated and tested, including discrete detectors, linear arrays, and area arrays.This paper discusses the theory of operation and performance of an improved wide dynamic range photodetector. Performance considerations include dynamic range, quantum efficiency, noise and noise equivalent power, responsivity, and speed. This photodetector can be integrated to form silicon image sensor arrays. Experimental results will also be presented that demonstrate a maximum-to-minimum detectable light intensity of greater than 106.

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Joshi, A. M., G. H. Olsen, V. S. Ban, E. Mykietyn, M. J. Lange, and D. T. Mohr. "Reduction of 1/f noise in multiplexed linear In/sub 0.53/Ga/sub 0.47/As detector arrays via epitaxial doping." IEEE Transactions on Electron Devices 40, no. 2 (February 1993): 303–8. http://dx.doi.org/10.1109/16.182505.

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Dickey, Joshua, Brett Borghetti, and William Junek. "Improving Regional and Teleseismic Detection for Single-Trace Waveforms Using a Deep Temporal Convolutional Neural Network Trained with an Array-Beam Catalog." Sensors 19, no. 3 (January 31, 2019): 597. http://dx.doi.org/10.3390/s19030597.

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The detection of seismic events at regional and teleseismic distances is critical to Nuclear Treaty Monitoring. Traditionally, detecting regional and teleseismic events has required the use of an expensive multi-instrument seismic array; however in this work, we present DeepPick, a novel seismic detection algorithm capable of array-like detection performance from a single-trace. We achieve this performance through three novel steps: First, a high-fidelity dataset is constructed by pairing array-beam catalog arrival-times with single-trace waveforms from the reference instrument of the array. Second, an idealized characteristic function is created, with exponential peaks aligned to the cataloged arrival times. Third, a deep temporal convolutional neural network is employed to learn the complex non-linear filters required to transform the single-trace waveforms into corresponding idealized characteristic functions. The training data consists of all arrivals in the International Seismological Centre Database for seven seismic arrays over a five year window from 1 January 2010 to 1 January 2015, yielding a total training set of 608,362 detections. The test set consists of the same seven arrays over a one year window from 1 January 2015 to 1 January 2016. We report our results by training the algorithm on six of the arrays and testing it on the seventh, so as to demonstrate the generalization and transportability of the technique to new stations. Detection performance against this test set is outstanding, yielding significant improvements in recall over existing techniques. Fixing a type-I error rate of 0.001, the algorithm achieves an overall recall (true positive rate) of 56% against the 141,095 array-beam arrivals in the test set, yielding 78,802 correct detections. This is more than twice the 37,572 detections made by an STA/LTA detector over the same period, and represents a 35% improvement over the 58,515 detections made by a state-of-the-art kurtosis-based detector. Furthermore, DeepPick provides at least a 4 dB improvement in detector sensitivity across the board, and is more computationally efficient, with run-times an order of magnitude faster than either of the other techniques tested. These results demonstrate the potential of our algorithm to significantly enhance the effectiveness of the global treaty monitoring network.

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Wang, Gang, Zhaowen Bai, Hongchang Wu, Xinmiao Zhang, Jiang Li, Mengjing Jin, Jinyuan Zhou, Erqing Xie, and Xiaojun Pan. "A wire-shaped and high-sensitivity photoelectrochemical ultraviolet photodetector based on TiO₂ nanotube arrays." Applied Physics Letters 121, no. 11 (September 12, 2022): 111101. http://dx.doi.org/10.1063/5.0102834.

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The multifunctional and smart ultraviolet photodetectors are of great significance and necessity for applications in many fields, especially in health and environmental risk monitoring. Hence, a wire-shaped photoelectrochemical type ultraviolet photodetector based on photoanode of TiO2 nanotube arrays (TNAs) fabricated by electrochemical anodization is demonstrated in this work. The TNAs can provide direct pathways for carriers and large internal surface area. The assembled UV detector presented a high photocurrent density of 110 μA cm−2, a high ON/OFF ratio of 467, and a fast rise and decay response time of 13 and 19 ms for the optimal thickness of the photoanode of TNAs. Moreover, the detectors also exhibited visible-blind characteristics and an excellent linear response even under weak irradiation (20–100 μW cm−2). The results are beneficial to realizing omnidirectional and wearable optoelectronic devices.

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Titov, V. Yu. "INVESTIGATION PARAMETERS ULTRASONIC DEVICE ON PHASED ARRAYS. FOCUSING MODES FOR ULTRASONIC DEVICE TYPE OF OMNISCAN." Kontrol'. Diagnostika, no. 278 (August 2021): 24–35. http://dx.doi.org/10.14489/td.2021.08.pp.024-035.

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The article is devoted to possibilities of regular focusing of Omniscan device on phased arrays. Questions are raised about evaluation of testing results when using linear and sector scan-ning with different focus parameters. The question of size near-field for phased arrays and asso-ciated choice of focus mode is discussed. The article is based on experiments conducted on samples with artificial reflectors at the same size, but different in type: a non-directional reflector (a side-drill hole) and a directional reflector (a flat-bottomed reflector), located at the same depth. The study was conducted for transducers with different frequencies. Families of curves of the signal amplitude dependence are obtained: on depth reflector, on focus depth setting, and on type reflector. The results emphasize need for precise focusing with-in the near-field of the transducer for small thicknesses or shallow depth of occurrence of discontinuities, and large variability in choice of focusing for depths in far-field. The study notes a significant difference in values of depth reflector at different focusses at a fixed position of transducer. In this article, in addition to considering possibility of focusing a flaw detector with phased arrays, the focus is on interpretation of results and reliability of testing in the analysis and comparison data. An integral part of the technological testing protocol for phased array is the depth of focus and the type of scanning. The obtained data do not depend on the frequency of transducer, which means that conclusions are applicable to general range of flaw detectors on phased arrays.

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von Harrach, H. S., and J. A. Colling. "A 2-dimensional detection system for Electron Energy Loss Spectroscopy." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 408–9. http://dx.doi.org/10.1017/s0424820100154019.

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A UHV-compatible parallel and serial detection system for electron energy-loss spectroscopy (EELS) has been developed for the VG HB501 field-emission scanning transmission electron microscope (STEM) using a 2-dimensional detector. As pointed out previously the charge coupled devices (CCD) available commercially are vastly superior, in terms of read-out noise, to linear photodiode arrays which are currently used for parallel EELS detection. This feature, together with the ability of operating as an imaging and storage device, makes the 2-dimensional CCD array an attractive choice for parallel EELS and low light-level imaging applications.The system reported here (Fig. 1) is an extension of the VG ELS501 sector magnetspectrometer used for serial EELS with many STEMS. It uses one quadrupole lens to magnify the energy-loss spectrum over a range of 2 to 0.1 eV per detector element. An electromagnetic deflector steers the spectrum to one of three YAG scintillators. Two of these scintillators with suitable masks are used for parallel EELS detection; the third is used for serial EELS and energy filtered STEM imaging via a lightguide and photomultiplier system by scanning the beam across a variable slit as in ELS 501 systems.

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Quandt, Eckhard, Stephan laBarré, Andreas Hartmann, and Heinz Niedrig. "Parallel Detection of Electron Energy Loss Spectra in Direct Mode." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 2 (August 12, 1990): 82–83. http://dx.doi.org/10.1017/s0424820100134004.

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Due to the development of semiconductor detectors with high spatial resolution -- e.g. charge coupled devices (CCDs) or photodiode arrays (PDAs) -- the parallel detection of electron energy loss spectra (EELS) has become an important alternative to serial registration. Using parallel detection for recording of energy spectroscopic large angle convergent beam patterns (LACBPs) special selected scattering vectors and small detection apertures lead to very low intensities. Therefore the very sensitive direct irradiation of a cooled linear PDA instead of the common combination of scintillator, fibre optic, and semiconductor has been investigated. In order to obtain a sufficient energy resolution the spectra are optionally magnified by a quadrupole-lens system.The detector used is a Hamamatsu S2304-512Q linear PDA with 512 diodes and removed quartz-glas window. The sensor size is 13 μm ∗ 2.5 mm with an element spacing of 25 μm. Along with the dispersion of 3.5 μm/eV at 40 keV the maximum energy resolution is limited to about 7 eV, so that a magnification system should be attached for experiments requiring a better resolution.

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Guo, FangMin, Ning Li, DaYuan Xiong, HongLou Zhen, XiangYan Xu, Ying Hou, RuiJun Ding, Wei Lu, Qi Huang, and JunMing Zhou. "The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays." Science in China Series G: Physics, Mechanics and Astronomy 51, no. 7 (June 22, 2008): 805–12. http://dx.doi.org/10.1007/s11433-008-0090-x.

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