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Relevant bibliographies by topics / InGaAs Linear Detector Arrays

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Academic literature on the topic 'InGaAs Linear Detector Arrays'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "InGaAs Linear Detector Arrays"

1

Deng, Honghai, Zhiliang Wang, Haibao Shao, Yi Li, Xue Li, and Haimei Gong. "Performance of Dual-Band Short-Wave Infrared InGaAs Focal-Plane Arrays with Interference Narrow-Band Filter." Electronics 8, no. 12 (2019): 1537. http://dx.doi.org/10.3390/electronics8121537.

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In this work, we fabricated dual-band 800 × 2 short-wave infrared (SWIR) indium gallium arsenide (InGaAs) focal-plane arrays (FPAs) using N-InP/i-In0.53Ga0.47As/N-InP double-heterostructure materials, which are often applied in ocean-color remote sensing. Using narrow-band interference-filter integration, our detector-adopted planner structure produced two detection channels with center wavelengths of 1.24 and 1.64 μm, and a full-width half-maximum (FWHM) of 0.02 μm for both channels. The photoelectric characteristics of the spectral response, modulation transfer function (MTF), and detectabil

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2

ZHU, Yao-Ming, Yong-Fu LI, Xue LI, et al. "Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination." JOURNAL OF INFRARED AND MILLIMETER WAVES 31, no. 1 (2012): 11–14. http://dx.doi.org/10.3724/sp.j.1010.2012.00011.

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Kumar, Saurabh, Bharadwaj Amrutur, and Sundarrajan Asokan. "Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware." Review of Scientific Instruments 89, no. 2 (2018): 025102. http://dx.doi.org/10.1063/1.5022548.

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4

Zhang Xiaoyu, 张笑宇, 王凤香 Wang Fengxiang, 郭颖 Guo Ying та ін. "基于InGaAs单光子探测器的线阵扫描激光雷达及其光子信号处理技术研究". Infrared and Laser Engineering 52, № 3 (2023): 20220474. http://dx.doi.org/10.3788/irla20220474.

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5

Oehme, Michael, Zili Yu, Maurice Wanitzek, et al. "Monolithic Integration of Gesn on Si for IR Camera Demonstration." ECS Meeting Abstracts MA2022-02, no. 32 (2022): 1169. http://dx.doi.org/10.1149/ma2022-02321169mtgabs.

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Due to the development of cost-efficient detector technologies in the NIR (Near Infrared), new areas of application are constantly being addressed. This affects autonomous driving, where LiDAR (Light Detection and Ranging) systems with better eye safety are being developed, as well as low-cost night vision cameras. Another area of application is NIR spectroscopy, e.g. in the areas of food monitoring, environmental research or medical technology. The increasing need for portable, low-cost analysis devices, for example for "on-site" measurements or for everyday life, is driving the development o

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6

Arnob, Md Masud Parvez, Hung Nguyen, Zhu Han та Wei-Chuan Shih. "Compressed sensing hyperspectral imaging in the 09–25 μm shortwave infrared wavelength range using a digital micromirror device and InGaAs linear array detector". Applied Optics 57, № 18 (2018): 5019. http://dx.doi.org/10.1364/ao.57.005019.

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7

LI, SHENG S. "MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 03 (2002): 761–801. http://dx.doi.org/10.1142/s0129156402001691.

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Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3–5 μm mid-wavelength infrared (MWIR) and 8–12 μm long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: λc > 14 μm) imaging array applications in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, multi-color or

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8

Yermolayev, D. M., E. A. Polushkin, S. Yu Shapoval, et al. "Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors." International Journal of High Speed Electronics and Systems 24, no. 01n02 (2015): 1550002. http://dx.doi.org/10.1142/s0129156415500020.

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Detection of terahertz radiation by GaAs transistor structures has been studied experimentally. The two types of samples under study included dense arrays of HEMTs and large-apertures detectors. Arrays consisted of parallel and series chains with asymmetric gate transistors for enhanced photoresponse on terahertz radiation. We investigated two types of wide-aperture detectors: grating gate detector, and single gate detector with bow-tie antenna. Wide-aperture detectors were symmetrical. Studies of transistor chains have shown that two essential features for this type of detector are the presen

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9

Moseley, A. J., M. Q. Kearley, R. C. Morris, J. Urquhart, M. J. Goodwin, and G. Harris. "8×8 flipchip assembled InGaAs detector arrays for optical interconnect." Electronics Letters 27, no. 17 (1991): 1566. http://dx.doi.org/10.1049/el:19910981.

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10

Yang, Bo, Yizhen Yu, Guixue Zhang, Xiumei Shao, and Xue Li. "Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures." Sensors 23, no. 14 (2023): 6556. http://dx.doi.org/10.3390/s23146556.

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A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly

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