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Journal articles on the topic 'Infrared optoelectronics'

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Author: Grafiati

Published: 14 March 2023

Last updated: 6 September 2023

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1

Zhuravlyova, L. M., M. R. Ivashevsky, and I. F. Muzafarov. "NEW MATERIALS IN OPTOELECTRONICS." World of Transport and Transportation 16, no. 2 (April 28, 2018): 74–83. http://dx.doi.org/10.30932/1992-3252-2018-16-2-7.

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For the English abstract and full text of the article please see the attached PDF-File (English version follows Russian version). ABSTRACT The current problems of increasing the efficiency of optoelectronic devices with the help of new materials are considered in the article. It is noted that the most promising direction of research is the design of semiconductor materials using the own isotopes of chemical elements. Thus, purification from heavy isotopes increases the speed of optoelectronic devices, quantum efficiency, sensitivity of photodetectors. The greatest effect of isotope purification can be obtained for a nanostructured material (superlattices). This new semiconductor material will create more sensitive instruments for night vision, solar panels, safety systems, medical equipment, ultra-long-range infrared photodetectors. Keywords: optoelectronics, communication, isotopes, purification, quantum efficiency, superlattices.

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2

JOHNSTONE, DANIEL K. "THERMAL MANAGEMENT IN OPTOELECTRONICS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 501–10. http://dx.doi.org/10.1142/s0129156402001411.

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One of the primary considerations in lasers and detectors for infrared is the operating temperature and its effect on device performance. Several research areas are converging on the problem to cooperatively propel devices operating in the infrared to new levels. The fabrication of devices is advancing by better understanding of defects, and growth of the materials and structures is better able to control the desired crystallinity and composition. Also, the active region of the device may be shielded from the heat and phonon generation processes can be reduced by appropriate design of the structures and selection of materials. Furthermore, typically bulky coolers can be miniaturized and integrated with the device during the fabrication process. Each of these areas are being pursued with the expectation that some of the alternatives down each path win be mutually beneficial toward the goal of catapulting laser operating temperatures, and detection of weak infrared signals at longer wavelength in smaller packages. Better device fabrication and integrated cooling, both in device structure and added integrated coolers, should contribute to the proliferation and benefits of infrared lasers and detectors.

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3

Gubbin, Christopher R., Simone De Liberato, and Thomas G. Folland. "Surface phonon polaritons for infrared optoelectronics." Journal of Applied Physics 131, no. 3 (January 21, 2022): 030901. http://dx.doi.org/10.1063/5.0064234.

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4

Monroy, E., F. Guillot, S. Leconte, E. Bellet-Amalric, L. Nevou, L. Doyennette, M. Tchernycheva, et al. "III-Nitride Nanostructures for Infrared Optoelectronics." Acta Physica Polonica A 110, no. 3 (September 2006): 295–301. http://dx.doi.org/10.12693/aphyspola.110.295.

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5

Krier, A. "Mid-infrared optoelectronics materials and devices." III-Vs Review 9, no. 2 (April 1996): 77. http://dx.doi.org/10.1016/s0961-1290(96)80025-1.

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6

Joullié, A. "Editorial: Mid-infrared optoelectronics: materials and devices." IEE Proceedings - Optoelectronics 149, no. 1 (February 1, 2002): 21. http://dx.doi.org/10.1049/ip-opt:20020166.

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7

Haywood, S. "Editorial: Mid-infrared optoelectronics materials and devices." IEE Proceedings - Optoelectronics 150, no. 4 (2003): 281. http://dx.doi.org/10.1049/ip-opt:20030871.

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8

Lhuillier, Emmanuel, and Philippe Guyot-Sionnest. "Recent Progresses in Mid Infrared Nanocrystal Optoelectronics." IEEE Journal of Selected Topics in Quantum Electronics 23, no. 5 (September 2017): 1–8. http://dx.doi.org/10.1109/jstqe.2017.2690838.

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9

Schöler, Michael, Maximilian W. Lederer, and Peter J. Wellmann. "Deep Electronic Levels in n-Type and p-Type 3C-SiC." Materials Science Forum 963 (July 2019): 297–300. http://dx.doi.org/10.4028/www.scientific.net/msf.963.297.

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In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applications.

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10

Assali, S., A. Attiaoui, S. Koelling, M. R. M. Atalla, A. Kumar, J. Nicolas, F. A. Chowdhury, C. Lemieux-Leduc, and O. Moutanabbir. "Micrometer-thick, atomically random Si_0.06Ge_0.90Sn_0.04 for silicon-integrated infrared optoelectronics." Journal of Applied Physics 132, no. 19 (November 21, 2022): 195305. http://dx.doi.org/10.1063/5.0120505.

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A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 μm-thick Si0.06Ge0.90Sn0.04 layer that is nearly lattice-matched to a Ge on Si substrate. Atomic-level studies demonstrate high crystalline quality and uniform composition and show no sign of short-range ordering and clusters. Room-temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 μm wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared bandgap tunable by alloy composition. These results underline the relevance of SiGeSn semiconductors in implementing a group IV material platform for silicon-integrated infrared optoelectronics.

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11

Liang, Guozhen, Xuechao Yu, Xiaonan Hu, Bo Qiang, Chongwu Wang, and Qi Jie Wang. "Mid-infrared photonics and optoelectronics in 2D materials." Materials Today 51 (December 2021): 294–316. http://dx.doi.org/10.1016/j.mattod.2021.09.021.

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12

Sargent, E. H. "Solution-Processed Infrared Optoelectronics: Photovoltaics, Sensors, and Sources." IEEE Journal of Selected Topics in Quantum Electronics 14, no. 4 (July 2008): 1223–29. http://dx.doi.org/10.1109/jstqe.2008.925766.

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13

Bauer, M. R., C. S. Cook, P. Aella, J. Tolle, J. Kouvetakis, P. A. Crozier, A. V. G. Chizmeshya, David J. Smith, and S. Zollner. "SnGe superstructure materials for Si-based infrared optoelectronics." Applied Physics Letters 83, no. 17 (October 27, 2003): 3489–91. http://dx.doi.org/10.1063/1.1622435.

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14

Sizov, F. F., and A. Rogalski. "Semiconductor superlattices and quantum wells for infrared optoelectronics." Progress in Quantum Electronics 17, no. 2 (January 1993): 93–164. http://dx.doi.org/10.1016/0079-6727(93)90005-t.

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15

Gámez-Valenzuela, Sergio, David Neusser, Carlos Benitez-Martin, Francisco Najera, Juan A. Guadix, Carlos Moreno-Yruela, Belén Villacampa, et al. "V-shaped pyranylidene/triphenylamine-based chromophores with enhanced photophysical, electrochemical and nonlinear optical properties." Materials Advances 2, no. 13 (2021): 4255–63. http://dx.doi.org/10.1039/d1ma00415h.

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16

Lhuillier, Emmanuel. "Narrow band gap nanocrystals for infrared cost-effective optoelectronics." Photoniques, no. 116 (2022): 54–57. http://dx.doi.org/10.1051/photon/202211654.

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Infrared optoelectronics is driven by epitaxially grown semiconductors and the introduction of alternative materials is often viewed with some suspicion until the newcomer has demonstrated a high degree of viability. Infrared nanocrystals have certainly reached this degree of maturity switching from the demonstration of absorption by chemists to their integration into increasingly complex systems. Here, we review some of the recent developments relative to the integration of nanocrystal devices in the 1-5 µm range.

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17

Solov’ev, V. A., A. A. Toropov, B. Ya Meltser, Ya A. Terent’ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, et al. "GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics." Semiconductors 36, no. 7 (July 2002): 816–20. http://dx.doi.org/10.1134/1.1493755.

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18

Clark, Samuel M., and Sang Eon Han. "Two-dimensional metamaterial transparent metal electrodes for infrared optoelectronics." Optics Letters 39, no. 12 (June 13, 2014): 3666. http://dx.doi.org/10.1364/ol.39.003666.

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19

Guillot, F., E. Monroy, B. Gayral, E. Bellet-Amalric, D. Jalabert, J. M. Gérard, Le Si Dang, et al. "GaN/AlGaN superlattices for optoelectronics in the mid-infrared." physica status solidi (b) 243, no. 7 (June 2006): 1669–73. http://dx.doi.org/10.1002/pssb.200565328.

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20

Choi, Jongmin, Jea Woong Jo, F. Pelayo García de Arquer, Yong-Biao Zhao, Bin Sun, Junghwan Kim, Min-Jae Choi, et al. "Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics." Advanced Materials 30, no. 29 (May 28, 2018): 1801720. http://dx.doi.org/10.1002/adma.201801720.

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21

Jia, Jinmei, Huan Liu, Jijie Zhao, Yuxuan Du, and Shuai Wen. "Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode." Journal of Nanomaterials 2023 (February 9, 2023): 1–9. http://dx.doi.org/10.1155/2023/4595819.

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Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of silicon in machine vision, autonomous vehicles, and night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) are promising materials. Because of the adjustable bandgap, it responds over a wide spectral range. However, the construction of a high-quality junction between Si and HgTe CQDs continues to be difficult, thus restricting the scope of its application. In this article, we describe the synthesis, characterization, and correlation of HgTe CQDs with reaction temperature and nanocrystal size. We then fabricated HgTe-CQDs/silicon infrared photodiodes and discussed how the silicon resistivity affected their performance. We found that the devices prepared from 9.1 nm HgTe quantum dots synthesized at 80°C and a silicon substrate with a resistivity of 20–50 Ω·cm has optimal performance parameters. This results in a responsivity of 0.2 mA/W for 1,550 nm incident light at room temperature. These results provide a direction for future silicon-compatible HgTe quantum dot infrared optoelectronics.

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22

Wang, Lin, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen, and Kah-Wee Ang. "Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics." Nanoscale 10, no. 29 (2018): 14359–67. http://dx.doi.org/10.1039/c8nr03207f.

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Here, we explore the potential of naturally formed black phosphorus heterojunction for optoelectronic application. As a result, BP heterojunction transistor not only enables gate-tunable photodetection with decent performance, but also has potential for infrared photovoltaics.

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23

Kim, Suk Hyun, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park, and Young Duck Kim. "Color Centers in Hexagonal Boron Nitride." Nanomaterials 13, no. 16 (August 15, 2023): 2344. http://dx.doi.org/10.3390/nano13162344.

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Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.

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24

Li, Yuyu, Khwanchai Tantiwanichapan, Anna K. Swan, and Roberto Paiella. "Graphene plasmonic devices for terahertz optoelectronics." Nanophotonics 9, no. 7 (May 14, 2020): 1901–20. http://dx.doi.org/10.1515/nanoph-2020-0211.

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AbstractPlasmonic excitations, consisting of collective oscillations of the electron gas in a conductive film or nanostructure coupled to electromagnetic fields, play a prominent role in photonics and optoelectronics. While traditional plasmonic systems are based on noble metals, recent work has established graphene as a uniquely suited materials platform for plasmonic science and applications due to several distinctive properties. Graphene plasmonic oscillations exhibit particularly strong sub-wavelength confinement, can be tuned dynamically through the application of a gate voltage, and span a portion of the infrared spectrum (including mid-infrared and terahertz (THz) wavelengths) that is not directly accessible with noble metals. These properties have been studied in extensive theoretical and experimental work over the past decade, and more recently various device applications are also beginning to be explored. This review article is focused on graphene plasmonic nanostructures designed to address a key outstanding challenge of modern-day optoelectronics – the limited availability of practical, high-performance THz devices. Graphene plasmons can be used as a means to enhance light–matter interactions at THz wavelengths in a highly tunable fashion, particularly through the integration of graphene resonant structures with additional nanophotonic elements. This capability is ideally suited to the development of THz optical modulators (where absorption is switched on and off by tuning the plasmonic resonance) and photodetectors (relying on plasmon-enhanced intraband absorption or rectification of charge-density waves), and promising devices based on these principles have already been reported. Novel radiation mechanisms, including light emission from electrically excited graphene plasmons, are also being explored for the development of compact narrowband THz sources.

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25

Luo, Lu, Simone Assali, Mahmoud Atalla, Sebastian Koelling, and Oussama Moutanabbir. "Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires." ECS Meeting Abstracts MA2020-01, no. 22 (May 1, 2020): 1321. http://dx.doi.org/10.1149/ma2020-01221321mtgabs.

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26

Dong, Zhengang, Jiaying Shen, Fan Zhang, Yaping Qi, Yang Zhang, Gongxun Bai, Zhenping Wu, and Danfeng Li. "Tunable-wavelength photoluminescence of a flexible transition metal doped oxide phosphor thin film." Applied Physics Letters 122, no. 13 (March 27, 2023): 132908. http://dx.doi.org/10.1063/5.0147266.

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Near-infrared luminescence phosphors are key material basis to potential applications for light sources and optoelectronic devices. In particular, it is vital to tune the luminescent properties of these phosphors in a flexible and controllable manner. Here, we demonstrate that a flexural strain originated from bending can be used to modulate the photoluminescence of freestanding Ni2+ doped SrTiO3 membranes. The bent membranes show remarkable red-shift emissions, arising from the variations of the symmetry of host materials and the local crystal fields around the Ni2+ ions. In addition, the phosphor films show a reversible and stable wavelength modulation with remarkable anti-fatigue characteristics after 104 bending cycles. These results provide a potential routine to develop flexible strain-tunable devices for applications in optical amplifiers and other optoelectronics.

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27

Sturm, James C. "Advanced Column-IV Epitaxial Materials for Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 60–64. http://dx.doi.org/10.1557/s0883769400030281.

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Over the past decade or so, research in silicon-based heterostructures has evolved from a few seminal publications on the growth and physical properties of Si1−xGex heteroepitaxial layers to a technology currently entering large-scale commercial production for heterojunction bipolar transistors (HBTs). During this period, extensive work has taken place on the optoelectronic applications of Si/Si1−x Gex such as 1.3–1.55 μam detectors for optical communication, 2–12-μm infrared detectors for two-dimensional (2D) focal plane arrays for night vision and thermal imaging, and infrared emitters for chip-to-chip optical communication as well as waveguiding and modulators. The overall goal of this work has been to merge optoelectronic functionality with the very large-scale-integration and electronic signal processing capabilities of silicon to create a silicon-based “superchip.”

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28

Yang, Li-Ming, Guo-Yong Fang, Jing Ma, Raghani Pushpa, and Eric Ganz. "Halogenated MOF-5 variants show new configuration, tunable band gaps and enhanced optical response in the visible and near infrared." Physical Chemistry Chemical Physics 18, no. 47 (2016): 32319–30. http://dx.doi.org/10.1039/c6cp06981a.

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We show that full halogenation of paradigm MOF-5 can tune the band gap and optical response between 1.0 and 4.2 eV leading to optical activity in the visible and infrared. Applications include photocatalysts, photoactive materials, and optoelectronics.

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29

Fang, Cizhe, Yan Liu, Qingfang Zhang, Genquan Han, Xi Gao, Yao Shao, Jincheng Zhang, and Yue Hao. "Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra." Opto-Electronic Advances 1, no. 3 (2018): 18000401–10. http://dx.doi.org/10.29026/oea.2018.180004.

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30

Baek, Se-Woong. "(Invited) Building Colloidal Quantum Dot Solids for Efficient Infrared Optoelectronics." ECS Meeting Abstracts MA2021-01, no. 23 (May 30, 2021): 900. http://dx.doi.org/10.1149/ma2021-0123900mtgabs.

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31

Aidaraliev, M., N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya. "Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics." Semiconductors 36, no. 8 (August 2002): 944–49. http://dx.doi.org/10.1134/1.1500478.

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32

Monroy, Eva, Fabien Guillot, Sylvain Leconte, Laurent Nevou, Laetitia Doyennette, Maria Tchernycheva, Francois H. Julien, Esther Baumann, Fabrizio R. Giorgetta, and Daniel Hofstetter. "Latest developments in GaN-based quantum devices for infrared optoelectronics." Journal of Materials Science: Materials in Electronics 19, no. 8-9 (December 5, 2007): 821–27. http://dx.doi.org/10.1007/s10854-007-9482-3.

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33

Baek, Se‐Woong, Pau Molet, Min‐Jae Choi, Margherita Biondi, Olivier Ouellette, James Fan, Sjoerd Hoogland, F. Pelayo García de Arquer, Agustín Mihi, and Edward H. Sargent. "Nanostructured Back Reflectors for Efficient Colloidal Quantum‐Dot Infrared Optoelectronics." Advanced Materials 31, no. 33 (June 21, 2019): 1901745. http://dx.doi.org/10.1002/adma.201901745.

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34

Pham, Phuong V., The-Hung Mai, Huy-Binh Do, Vinoth Kumar Ponnusamy, and Feng-Chuan Chuang. "Integrated Graphene Heterostructures in Optical Sensing." Micromachines 14, no. 5 (May 17, 2023): 1060. http://dx.doi.org/10.3390/mi14051060.

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Graphene—an outstanding low-dimensional material—exhibited many physics behaviors that are unknown over the past two decades, e.g., exceptional matter–light interaction, large light absorption band, and high charge carrier mobility, which can be adjusted on arbitrary surfaces. The deposition approaches of graphene on silicon to form the heterostructure Schottky junctions was studied, unveiling new roadmaps to detect the light at wider-ranged absorption spectrums, e.g., far-infrared via excited photoemission. In addition, heterojunction-assisted optical sensing systems enable the active carriers’ lifetime and, thereby, accelerate the separation speed and transport, and then they pave new strategies to tune high-performance optoelectronics. In this mini-review, an overview is considered concerning recent advancements in graphene heterostructure devices and their optical sensing ability in multiple applications (ultrafast optical sensing system, plasmonic system, optical waveguide system, optical spectrometer, or optical synaptic system) is discussed, in which the prominent studies for the improvement of performance and stability, based on the integrated graphene heterostructures, have been reported and are also addressed again. Moreover, the pros and cons of graphene heterostructures are revealed along with the syntheses and nanofabrication sequences in optoelectronics. Thereby, this gives a variety of promising solutions beyond the ones presently used. Eventually, the development roadmap of futuristic modern optoelectronic systems is predicted.

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35

Cao, Fei, Xiaobao Xu, Dejian Yu, and Haibo Zeng. "Lead-free halide perovskite photodetectors spanning from near-infrared to X-ray range: a review." Nanophotonics 10, no. 8 (June 1, 2020): 2221–47. http://dx.doi.org/10.1515/nanoph-2020-0632.

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Abstract Photodetectors based on semiconducting materials are vital building blocks for modern systems containing optoelectronic modules. Although commercial semiconductors have established good performances, they are plagued by complex processing procedures and stalled performances. Recently, lead halide perovskites with superior semiconducting attributes have achieved stunning progress in optoelectronics including photodetectors. However, the toxicity of lead and the ill stability significantly handicap their practical use. Great efforts thus have been devoted to developing lead-free alternatives with improved stability and uncompromised traits. In this review, we thoroughly summarize recent progress in photodetectors based on lead-free halide perovskite variants. The substitution of lead with new elements usually induces a change in structure and ensuingly optoelectronic particularities, which afford unique suitability for a collection of functionality-specified photodetectors. Especially, the family of lead-free variants witnesses a range of bandgaps that construct a broadband photon detection spanning from near-infrared (NIR) to visible regimes. Besides, stress is laid on the X-ray detection capability based on especially bismuth-type lead-free perovskites, of which the strong X-ray absorption, large bulk resistance, suppressed ion migration, and efficient charge collection enable superior X-ray sensitivities and ultralow detection limits. Finally, the challenges and visions are discussed.

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Ahamed, M. Irshad, and K. Sathish Kumar. "Modelling of electronic and optical properties of Cu2SnS3 quantum dots for optoelectronics applications." Materials Science-Poland 37, no. 1 (March 1, 2019): 108–15. http://dx.doi.org/10.2478/msp-2018-0103.

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AbstractCopper tin sulfide (Cu2SnS3) is a unique semiconductor, whose nanocrystals have attracted researchers’ attention for its tunable energy bandgap and wavelength in visible and near infrared range. Quantum dots which are fabricated from this material are highly suitable for optoelectronics and solar cell applications. This paper discusses the tunable energy bandgap, exciton Bohr radius and wavelength range of wurtzite structure of Cu2SnS3 quantum dots to assess the opportunity to use them in optoelectronics applications. The considerations show that the mole fraction of copper increases as energy bandgap decreases and tunable energy bandgap of this quantum dot material is inversely proportional to the wavelength.

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37

Jawad, M., S. Selvaraju, M. U. Javed, F. Ali, Q. Rafiq, I. Ur Rahman, B. Masood, M. B. Hussain, S. Azam, and H. Elhosiny Ali. "Effect of Ce and Sm doping on optoelectronic and thermoelectric properties of Bi2Te3 alloy." Chalcogenide Letters 19, no. 12 (December 21, 2022): 871–83. http://dx.doi.org/10.15251/cl.2022.1912.871.

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Metallic materials attracted much attention in the field of optoelectronics for several applications such as infrared radiation detection. In present study, electronic, optical and thermoelectric spectra of Sm and Ce co doped Bi2Te3 materials have been studied using density functional theory (DFT) calculations. Electronic study of the studied material indicates metallic and good optical and thermoelectric properties. Optical spectra of the doped Bi2Te3 show that absorption lies in visible and near UV region of the radiation. Thus, it seems to have potential applications in optoelectronics. Thermoelectric properties favor the semiconducting nature with high Seebeck coefficient and dominant character of p-type charge carriers.

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38

Pontillas, Shienna Marie, Florentino C. Sumera, and Rigoberto C. Advincula. "Reversible Addition-Fragmentation Chain Transfer (RAFT) Polymerization of Poly(ethylmethacrylate) with Pendant Carbazole Groups." KIMIKA 29, no. 1 (August 7, 2018): 41–50. http://dx.doi.org/10.26534/kimika.v29i1.41-50.

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Carbazole containing polymers have captured the interest of researchers for use in optoelectronics. For an important material to exhibit its optoelectronic properties intrinsic uniformity in the molecular level is required. Thus, a monomer of ethyl methacrylate with pendant carbazole group was synthesized and polymerized via Reversible Addition-Fragmentation Chain Transfer (RAFT) to produce polymers with controlled molecular weight distribution and narrow polydispersity index (PDI). This method of polymerization was compared with that of free radical polymerization by gel permeation chromatography (GPC). The RAFT’s polymerization kinetics was observed to follow a plot of number average molecular weight (Mn) versus % conversion, characteristic of living polymerization. It was also shown to possess polymer chain extension capability. The structure of the monomer and the polymers were characterized by Fourier-Transform Infrared Spectroscopy (FT-IR) and Nuclear Magnetic Resonance (NMR).

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39

Alam, Injamul, Kadambinee Sa, Sonali Das, BVRS Subramanyam, Manoranjan Mandal, Subhasri Subudhi, Santosini Patra, and Pitamber Mahanandia. "Study of electrical properties of a few layers of graphene sheets under Ultraviolet and Visible light irradation." International Journal of Innovative Research in Physics 2, no. 4 (July 5, 2021): 8–14. http://dx.doi.org/10.15864/ijiip.2402.

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Graphene is an excellent 2D material due to its exceptional electrical properties which can be potentially used in optoelectronic. In order to use graphene in optoelectronics, the electrical properties need to be tuned. To tune electrical properties, few-layer graphene sheets (FLGS) prepared by electrochemical method have been used. The prepared FLGS has been characterized by Field Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscope (TEM), X-ray Diffraction (XRD), Ultraviolet-Visible Spectroscopy (UV-Vis), Fourier Transform Infrared (FTIR), and Raman Spectroscopy. The optimized FLGS by characterization has been employed to tune the electrical properties in the presence and absence of water drop under ultraviolet and visible light. The obtained current of FLGS thin film is ~ 0.8mA whereas; the measured current under ultraviolet light is ~ 1.7mA and under visible light ~ 1.07mA. However, it has been observed that the measured current has decreased to under ultraviolet ~ 0.645mA and visible light ~ 0.96mA in the presence of water drop in FLGS film. Therefore, the findings suggest that the electrical properties of FLGS can be tuned for various applications in optoelectronic devices.

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Hafiz, Shihab Bin, Michael R. Scimeca, Ayaskanta Sahu, and Dong-Kyun Ko. "(Invited) Mid-Infrared Colloidal Quantum Dot Based Nanoelectronics and Nano-Optoelectronics." ECS Transactions 92, no. 1 (July 3, 2019): 11–16. http://dx.doi.org/10.1149/09201.0011ecst.

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Wassweiler, Ella, and Fatima Toor. "Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices." AIP Advances 6, no. 6 (June 2016): 065018. http://dx.doi.org/10.1063/1.4954766.

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Zhuang, Q. D., H. Alradhi, Z. M. Jin, X. R. Chen, J. Shao, X. Chen, Ana M. Sanchez, et al. "Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics." Nanotechnology 28, no. 10 (February 8, 2017): 105710. http://dx.doi.org/10.1088/1361-6528/aa59c5.

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Lei, Yong, Xiaozhan Yang, and Wenlin Feng. "Synthesis of vertically-aligned large-area MoS₂ nanofilm and its application in MoS₂/Si heterostructure photodetector." Nanotechnology 33, no. 10 (December 17, 2021): 105709. http://dx.doi.org/10.1088/1361-6528/ac3c7e.

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Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20 nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA W−1), good photodetectivity (5.36 × 1011 Jones) and high on/off ratio I on/I off (8.31 × 103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectively. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.

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Sotor, Jarosław, Krzysztof Abramski, Arkadiusz Antończak, Grzegorz Sobon, Paweł Kaczmarek, Adam Wąż, Grzegorz Dudzik, et al. "Laser and Fiber Electronics Group." Photonics Letters of Poland 11, no. 2 (July 1, 2019): 38. http://dx.doi.org/10.4302/plp.v11i2.901.

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The Laser & Fiber Electronics Group (LFEG) constitutes a team of young, skilled and ambitious researchers, doctoral candidates and students. The Group possesses great experience in applied optoelectronics and laser technology. Currently, it conducts research in several areas,mostly focusing on: ultrashort laser pulse generation using novel materials, development of pulsed fiber laser sources ranging from visible to mid-infrared, development of compact mid-infrared optical frequency combs, laser spectroscopy techniques, laser vibrometry, solid-state lasers, advanced analog and digital electronics, and investigations of light-matter interaction.

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Degiron, Aloyse. "Pushing the boundaries of nanocrystal optoelectronics with structured photonic environments." Photoniques, no. 119 (2023): 52–57. http://dx.doi.org/10.1051/photon/202311952.

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This article discusses the prospect of advanced functionalities in the field of nanocrystal optoelectronics using structured photonic environments, with a particular emphasis on near-infrared light-emitting diodes. The ability to achieve full control of brightness, colour, phase and polarization is highlighted, as well as the importance of determining whether a local or non-local photonic response is required to achieve a given functionality. These developments have implications for various applications, including displays, communication protocols and sensors.

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Musat, Viorica, Ana Filip, Nicolae Tigau, Rodica Dinica, Elena Herbei, Cosmin Romanitan, Iuliana Mihalache, and Munizer Purica. "1D Nanostructured ZnO Layers by Microwave - Assisted Hydrothermal Synthesis." Revista de Chimie 69, no. 10 (November 15, 2018): 2788–93. http://dx.doi.org/10.37358/rc.18.10.6625.

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ZnO 1D nanostructures have been gaining more and more advanced applications in various fields from electronics and optoelectronics to environment protection and medicine due to the synergy between the unique properties of semiconductor zinc oxide and those of 1D nanostructures. This paper investigates the microwave (MW)-assisted hydrothermal synthesis of 1D nanostructured ZnO layers grown on glass substrates to be used in optoelectronic applications. The effects of MW-irradiation power (400-600 W) and span (3-6 min) on the morphology, microstructure and optical properties (transmittance, reflectance, absorption coefficient and refractive index) of the resulted nanostructured layers were investigated by SEM, FTIR and UV-Vis-NIR spectroscopy. The band gap energy was calculated from optical absorbance spectra in UV-Vis range.The obtained ZnO nanostructured layers show optical transmittance between 58 and 87% and low reflection between 4.2-6.8 % at normal incidence of light in the visible spectra and transmittance values from 75 to 85% and reflectance between 4.8 and 6.7% in the near infrared spectra.

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Kandaswamy, P. K., H. Machhadani, E. Bellet-Amalric, L. Nevou, M. Tchernycheva, L. Lahourcade, F. H. Julien, and E. Monroy. "Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics." Microelectronics Journal 40, no. 2 (February 2009): 336–38. http://dx.doi.org/10.1016/j.mejo.2008.07.058.

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Gao, Rui, Hairui Liu, Jien Yang, Feng Yang, Tianxing Wang, Zhuxia Zhang, Xuguang Liu, Husheng Jia, Bingshe Xu, and Heng Ma. "2D anisotropic type-I SiS vdW heterostructures toward infrared polarized optoelectronics applications." Applied Surface Science 529 (November 2020): 147026. http://dx.doi.org/10.1016/j.apsusc.2020.147026.

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Vella, Jarrett H., Lifeng Huang, Naresh Eedugurala, Kevin S. Mayer, Tse Nga Ng, and Jason D. Azoulay. "Broadband infrared photodetection using a narrow bandgap conjugated polymer." Science Advances 7, no. 24 (June 2021): eabg2418. http://dx.doi.org/10.1126/sciadv.abg2418.

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Photodetection spanning the short-, mid-, and long-wave infrared (SWIR-LWIR) underpins modern science and technology. Devices using state-of-the-art narrow bandgap semiconductors require complex manufacturing, high costs, and cooling requirements that remain prohibitive for many applications. We report high-performance infrared photodetection from a donor-acceptor conjugated polymer with broadband SWIR-LWIR operation. Electronic correlations within the π-conjugated backbone promote a high-spin ground state, narrow bandgap, long-wavelength absorption, and intrinsic electrical conductivity. These previously unobserved attributes enabled the fabrication of a thin-film photoconductive detector from solution, which demonstrates specific detectivities greater than 2.10 × 109 Jones. These room temperature detectivities closely approach those of cooled epitaxial devices. This work provides a fundamentally new platform for broadly applicable, low-cost, ambient temperature infrared optoelectronics.

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Yang, Xianguang, and Baojun Li. "Monolayer MoS2 for nanoscale photonics." Nanophotonics 9, no. 7 (February 3, 2020): 1557–77. http://dx.doi.org/10.1515/nanoph-2019-0533.

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AbstractTransition metal dichalcogenides are two-dimensional semiconductors with strong in-plane covalent and weak out-of-plane interactions, resulting in exfoliation into monolayers with atomically thin thickness. This creates a new era for the exploration of two-dimensional physics and device applications. Among them, MoS2 is stable in air and easily available from molybdenite, showing tunable band-gaps in the visible and near-infrared waveband and strong light-matter interactions due to the planar exciton confinement effect. In the single-layer limit, monolayer MoS2 exhibits direct band-gaps and bound excitons, which are fundamentally intriguing for achieving the nanophotonic and optoelectronic applications. In this review, we start from the characterization of monolayer MoS2 in our group and understand the exciton modes, then explore thermal excitons and band renormalization in monolayer MoS2. For nanophotonic applications, the recent progress of nanoscale laser source, exciton-plasmon coupling, photoluminescence manipulation, and the MoS2 integration with nanowires or metasurfaces are overviewed. Because of the benefits brought by the unique electronic and mechanical properties, we also introduce the state of the art of the optoelectronic applications, including photoelectric memory, excitonic transistor, flexible photodetector, and solar cell. The critical applications focused on in this review indicate that MoS2 is a promising material for nanophotonics and optoelectronics.

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