Relevant bibliographies by topics / Infrared optoelectronics

Academic literature on the topic 'Infrared optoelectronics'

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Published: 14 March 2023
Last updated: 6 September 2023

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Journal articles on the topic "Infrared optoelectronics"

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Zhuravlyova, L. M., M. R. Ivashevsky, and I. F. Muzafarov. "NEW MATERIALS IN OPTOELECTRONICS." World of Transport and Transportation 16, no. 2 (April 28, 2018): 74–83. http://dx.doi.org/10.30932/1992-3252-2018-16-2-7.

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For the English abstract and full text of the article please see the attached PDF-File (English version follows Russian version). ABSTRACT The current problems of increasing the efficiency of optoelectronic devices with the help of new materials are considered in the article. It is noted that the most promising direction of research is the design of semiconductor materials using the own isotopes of chemical elements. Thus, purification from heavy isotopes increases the speed of optoelectronic devices, quantum efficiency, sensitivity of photodetectors. The greatest effect of isotope purification can be obtained for a nanostructured material (superlattices). This new semiconductor material will create more sensitive instruments for night vision, solar panels, safety systems, medical equipment, ultra-long-range infrared photodetectors. Keywords: optoelectronics, communication, isotopes, purification, quantum efficiency, superlattices.
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JOHNSTONE, DANIEL K. "THERMAL MANAGEMENT IN OPTOELECTRONICS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 501–10. http://dx.doi.org/10.1142/s0129156402001411.

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One of the primary considerations in lasers and detectors for infrared is the operating temperature and its effect on device performance. Several research areas are converging on the problem to cooperatively propel devices operating in the infrared to new levels. The fabrication of devices is advancing by better understanding of defects, and growth of the materials and structures is better able to control the desired crystallinity and composition. Also, the active region of the device may be shielded from the heat and phonon generation processes can be reduced by appropriate design of the structures and selection of materials. Furthermore, typically bulky coolers can be miniaturized and integrated with the device during the fabrication process. Each of these areas are being pursued with the expectation that some of the alternatives down each path win be mutually beneficial toward the goal of catapulting laser operating temperatures, and detection of weak infrared signals at longer wavelength in smaller packages. Better device fabrication and integrated cooling, both in device structure and added integrated coolers, should contribute to the proliferation and benefits of infrared lasers and detectors.
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Gubbin, Christopher R., Simone De Liberato, and Thomas G. Folland. "Surface phonon polaritons for infrared optoelectronics." Journal of Applied Physics 131, no. 3 (January 21, 2022): 030901. http://dx.doi.org/10.1063/5.0064234.

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Monroy, E., F. Guillot, S. Leconte, E. Bellet-Amalric, L. Nevou, L. Doyennette, M. Tchernycheva, et al. "III-Nitride Nanostructures for Infrared Optoelectronics." Acta Physica Polonica A 110, no. 3 (September 2006): 295–301. http://dx.doi.org/10.12693/aphyspola.110.295.

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Krier, A. "Mid-infrared optoelectronics materials and devices." III-Vs Review 9, no. 2 (April 1996): 77. http://dx.doi.org/10.1016/s0961-1290(96)80025-1.

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Joullié, A. "Editorial: Mid-infrared optoelectronics: materials and devices." IEE Proceedings - Optoelectronics 149, no. 1 (February 1, 2002): 21. http://dx.doi.org/10.1049/ip-opt:20020166.

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Haywood, S. "Editorial: Mid-infrared optoelectronics materials and devices." IEE Proceedings - Optoelectronics 150, no. 4 (2003): 281. http://dx.doi.org/10.1049/ip-opt:20030871.

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Lhuillier, Emmanuel, and Philippe Guyot-Sionnest. "Recent Progresses in Mid Infrared Nanocrystal Optoelectronics." IEEE Journal of Selected Topics in Quantum Electronics 23, no. 5 (September 2017): 1–8. http://dx.doi.org/10.1109/jstqe.2017.2690838.

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Schöler, Michael, Maximilian W. Lederer, and Peter J. Wellmann. "Deep Electronic Levels in n-Type and p-Type 3C-SiC." Materials Science Forum 963 (July 2019): 297–300. http://dx.doi.org/10.4028/www.scientific.net/msf.963.297.

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In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applications.
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Assali, S., A. Attiaoui, S. Koelling, M. R. M. Atalla, A. Kumar, J. Nicolas, F. A. Chowdhury, C. Lemieux-Leduc, and O. Moutanabbir. "Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics." Journal of Applied Physics 132, no. 19 (November 21, 2022): 195305. http://dx.doi.org/10.1063/5.0120505.

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A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 μm-thick Si0.06Ge0.90Sn0.04 layer that is nearly lattice-matched to a Ge on Si substrate. Atomic-level studies demonstrate high crystalline quality and uniform composition and show no sign of short-range ordering and clusters. Room-temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 μm wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared bandgap tunable by alloy composition. These results underline the relevance of SiGeSn semiconductors in implementing a group IV material platform for silicon-integrated infrared optoelectronics.
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Dissertations / Theses on the topic "Infrared optoelectronics"

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Badioli, Michela. "Graphene optoelectronics from the visible to the mid-infrared." Doctoral thesis, Universitat Politècnica de Catalunya, 2015. http://hdl.handle.net/10803/336097.

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Since its discovery in 2004, graphene, a one-atom-thick layer of carbon atoms arranged in a hexagonal lattice, has attracted huge interest from the scientific community due to its extraordinary electronic, mechanical, and optical properties. While most of the earliest studies focused on electronic transport, in recent years the fields of graphene photonics and optoelectronics have thriven. The goal of this thesis is to explore the use of graphene for novel optoelectronic devices, adopting different approaches to enhance the electrically tunable graphene-light interaction in a broad spectral range, from the visible to the mid-infrared. This includes investigating the sub-wavelength interaction and energy transfer between a dipole and a graphene sheet, as well as working on efficient photodetection schemes. Indeed graphene high electronic mobility, broadband absorption, flexibility and tunable optoelectronic properties (described in Chapter 1) make it extremely appealing for the development of optoelectronic applications with new functionalities. Concerning the devices, the starting point of the experiments presented in the thesis are graphene field effect transistors of different geometries, whose fabrication and characterization techniques are described in Chapter 2. The tunability of the optoelectronic properties via control over the Fermi energy is an essential feature of the fabricated devices. The change in the Fermi level is achieved applying a voltage to a back-gate or a polymer electrolyte top-gate. We address both aspects at the core of optoelectronics, i.e. the control of optical properties with electric fields and the modification of electrical quantities, such as current, with light. Therefore the first part of the thesis (comprising Chapter 3, 4 and 5) is devoted to graphene nanophotonics and plasmonics, while the second part deals with graphene-based photodetection (Chapter 6, 7, 8 and 9). In Chapter 3, the main concepts at the basis of graphene nanophotonics are presented, such as the electrical tunability and the strong field confinement of the 2D plasmons, as well as the coupling of an optical emitter to graphene plasmons or electron-hole pair excitations. Then we present two experiments showing the control of light by means of static electric fields. In Chapter 4 we show the electrical control of the relaxation pathways of erbium ions in close proximity to a graphene sheet: the energy flow from the emitters is tuned to electron-hole pairs in graphene, to free space photons and to plasmons by changing the graphene Fermi level. In Chapter 5 we present the real-space imaging and tuning of highly confined graphene plasmons in the mid-infrared, launched by the dipole of a metallized s-SNOM tip (Chapter 5). In this case modifying the graphene Fermi level leads to a change in the plasmon wavelength. In Chapter 6 we review existing schemes for graphene photodetectors and the main mechanisms enabling photodetection with graphene, with particular emphasis toward the photothermoelectric effect. Then we present three cases where graphene photoresponse is enhanced exploiting the interaction with surrounding materials. A hybrid graphene-quantum dot photodetector in the visible and near-infrared is reported in Chapter 7: a photogating effect after light absorption in the quantum dots leads to extremely high responsivities (over one million A/W). In Chapter 8 we demonstrate how the excitation of bulk phonons of a polar substrate enhances the mid-infrared photocurrent via a photothermoelectric effect. Also substrate surface phonons, launched by illuminating a metal edge with light polarized perpendicularly to it, lead to an increase in the photoresponse, as described in Chapter 9. The results presented in this thesis open new avenues in the field of graphene-based optoelectronics for active nano-photonics and sensing.
Desde su descubrimiento en 2004, el grafeno, una sola capa átomos de carbono en un retículo hexagonal, ha atraído un gran interés de la comunidad científica debido a sus propiedades electrónicas, mecánicas y ópticas extraordinarias. Los primeros estudios se centraron en el transporte electrónico, pero en los últimos años estudios en el campo de la fotónica y de las propiedades optoelectrónicas del grafeno han suscitado un mayor interés. El objetivo de esta tesis es explorar el uso del grafeno para nuevos dispositivos optoelectrónicos, adoptando diferentes enfoques para mejorar la interacción del grafeno con la luz en un amplio rango espectral, desde el rango visible hasta el infrarrojo medio. Esto incluye la investigación de la interacción y la transferencia de energía entre un dipolo y una monocapa de grafeno cercana, así como trabajar en esquemas de fotodetección eficientes. La alta movilidad electrónica, la absorción de banda ancha, la flexibilidad y las propiedades optoelectrónicas sintonizables (véase Capítulo 1) hacen que el grafeno sea extremadamente atractivo para el desarrollo de aplicaciones optoelectrónicas con nuevas propiedades funcionalidades. En cuanto a los dispositivos, el punto de partida de los experimentos presentados en esta tesis son transistores de efecto de campo con diferentes geometrías, cuya fabricación y técnicas de caracterización se describen en el Capítulo 2. La capacidad de ajuste de las propiedades optoelectrónicas a través del control de la energía de Fermi es una característica esencial de los dispositivos, y se logra con la aplicación de un voltaje de puerta. Nos dirigimos a ambos aspectos a la base de la optoelectrónica, es decir, el control de las propiedades ópticas con campos eléctricos y la modificación de magnitudes eléctricas, como la corriente con la luz incidente. Por tanto, la primera parte de la tesis (Capítulos 3, 4 y 5) se dedica al estudio de la nanofotónica y plasmónica del grafeno, mientras que la segunda parte se ocupa de fotodetección basada en grafeno (Capítulos 6, 7, 8 y 9). En el Capítulo 3, se explican los principales conceptos del campo de la nanofotónica de grafeno, como la capacidad de ajuste eléctrico y el fuerte confinamiento de los plasmones 2D, así como el acoplamiento de un emisor óptico con los plasmones o pares electrón-hueco. Luego se presentan dos experimentos que muestran el control de la luz por medio de campos eléctricos estáticos. En el Capítulo 4 se muestra el control eléctrico de las vías de relajación de iones de erbio en las proximidades de una monocapa de grafeno: el flujo de energía a partir de los emisores se puede dirigir a pares electrón-hueco en el grafeno, a fotones y a plasmones cambiando el nivel de Fermi del grafeno. En el Capítulo 5 se presenta la excitación y el ajuste de plasmones de grafeno altamente confinados en el infrarrojo medio, activado mediante el dipolo de una punta de microscopia de campo cercano (Capítulo 5). En el Capítulo 6 se revisan los fotodetectores de grafeno existentes y los principales mecanismos que permitan fotodetección con grafeno. A continuación se presentan tres casos donde la fotorrespuesta del grafeno se mejora con la explotación de la interacción con los materiales circundantes. Un fototransistor híbrido de grafeno y puntos cuánticos (véase Capitulo 7) llega a responsividad extremadamente alta en el visible y infrarrojo cercano (más de un millón de A/W). En el Capítulo 8 se demuestra cómo la excitación de fonones de bulk de un sustrato polar aumenta la fotocorriente en el infrarrojo medio a través de un efecto fototermoeléctrico. También fonones superficie del sustrato, lanzados por la iluminación de un borde de metal con luz polarizada perpendicularmente, conducen a un aumento en la fotorrespuesta (Capítulo 9). Los resultados presentados en esta tesis abren nuevos caminos en el campo de la optoelectrónica basada en el grafeno en el campo de la nano-fotónica activa y de los sensores
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Cook, Neil B. "Growth and characterisation of pentanary GaInAsSbP Alloys for mid-infrared optoelectronics." Thesis, Lancaster University, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.536032.

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Livache, Clément. "Quantum-confined nanocrystals for infrared optoelectronics : carrier dynamics and intraband transitions." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS216.

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Les nanocristaux colloïdaux sont des objets cristallins obtenus par voie chimique. Ces objets étant confinés, leurs propriétés optiques dépendent de leur taille, et peuvent donc être ajustées à la demande. Les nanocristaux de tellurure de mercure et de séléniure de mercure possèdent notamment des propriétés d’absorption dans l’infrarouge: l’énergie de bande interdite (interbande) des nanocristaux de HgTe peut-être variée du SWIR au MWIR, tandis que les nanocristaux de HgSe, grâce à un auto-dopage électronique dégénéré, présentent des transitions intrabande ajustables du MWIR au LWIR. Un contrôle fin de la chimie de surface de ces objets permet de les intégrer dans des dispositifs électroniques et de créer des détecteurs infrarouge à bas coût. Dans mon travail de thèse, je me suis intéressé à différentes manières de sonder la dynamique des porteurs dans ces dispositifs, soit via la mesure du photocourant, soit par des observations directes de la relaxation des porteurs photogénérés. A partir d’études sur la dynamique dans HgSe, j’ai identifié les limitations apportées par le fort dopage de ces nanocristaux : le transport est dominé par la forte densité électronique, conduisant à des faibles performances pour la détection IR. En reprenant les concepts développés pour les hétérostructures de semi-conducteurs III-V, je propose différentes approches fructueuses pour découpler les propriétés optiques et le transport de charges dans des dispositifs de détection MWIR à base de nanocristaux de HgSe
Colloidal nanocrystals are crystalline objects grown by colloidal chemistry approaches. Thanks to quantum confinement, their optical properties depend on their size, and can then be tuned accordingly. Using mercury selenide and mercury telluride, we grow infrared-absorbing nanocrystals. While HgTe nanocrystals interband gap can be tuned from the NIR to the MWIR, HgSe nanocrystals display self-doping and intraband transitions in the MWIR to LWIR. With a careful control of their surface chemistry, those nanocrystals can be integrated into electrical devices to create cheap infrared photodetectors. In my PhD work, I am interested in probing carrier dynamics in those devices using various time-resolved techniques, either based on photocurrent measurements or on direct observation of the photocarriers relaxation. From dynamic study of HgSe intraband devices, I identify the issue brought by the degenerative doping level of those nanocrystals: transport is driven by the doping of this material, resulting in very poor IR-sensing performances. By taking inspiration from the III-V semiconductor developments, I propose several successful approaches to uncouple optical and transport properties in HgSe-based, MWIR detectors
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Norton, Dennis Thomas Jr. "Type-II InAs/GaSb superlattice LEDs: applications for infrared scene projector systems." Diss., University of Iowa, 2013. https://ir.uiowa.edu/etd/5031.

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Optoelectronic devices operating in the mid-wave (3-5 Μm) and long-wave (8-12 Μm) infrared (IR) regions of the electromagnetic spectrum are of a great interest for academic and industrial applications. Due to the lack of atmospheric absorption, devices operating within these spectral bands are particularly useful for spectroscopy, imaging, and dynamic scene projection. Advanced IR imaging systems have created an intense need for laboratory-based infrared scene projector (IRSP) systems which can be used for accurate simulation of real-world phenomena occurring in the IR. These IRSP systems allow for reliable, reproducible, safe, and cost-effective calibration of IR detector arrays. The current state-of-the-art technology utilized for the emitter source of IRSP systems is thermal pixel arrays (TPAs) which are based on thin film resistor technology. Thermal pixel array technology has fundamental limitations related to response time and maximum simulated apparent temperature, making them unsuitable for emulation of very hot (> 700 K) and rapidly evolving scenes. Additionally, there exists a need for dual wavelength emitter arrays for IRSP systems dedicated to calibration of dual wavelength detector arrays. This need is currently met by combining the spectral output from two separate IRSP systems. This configuration requires precise alignment of the output from both systems and results in the maximum radiance being limited to approximately half that of the capability of a given emitter array due to the optics used to combine the outputs. The high switching speed inherent to IR light-emitting diodes (LEDs) and the potential for high power output makes them an appealing candidate to replace the thermal pixel arrays used for IRSP systems. To this end, research has been carried out to develop and improve the device performance of IR LEDs based on InAs/GaSb type-II superlattices (T2SLs). A common method employed to achieve high brightness from LEDs is to incorporate multiple active regions, coupled by tunnel junctions. Tunnel junctions must provide adequate barriers to prevent carrier leakage, while at the same time remain low in tunneling resistance to prevent unwanted heating. The performance of two tunnel junction designs are compared in otherwise identical four stage InAs/GaSb superlattice LED (SLED) devices for application in IRSP systems. This research culminated in the development of a 48 Μm pitch, 512$times512 individually addressable mid-wave IR LED array based on a sixteen stage, InAs/GaSb T2SL device design. This array was hybridized to a read-in integrated circuit and exhibited a pixel yield greater than 95 %. Projections based on single element emitter results predict this array will be able to achieve a peak apparent temperature of 1350 K within the entire 3-5 Μm band. These results demonstrate the feasibility of emitter arrays intended for IRSP systems based on InAs/GaSb SLED devices. Additionally, a dual wavelength 48 Μm pitch, 8x8 emitter array based on InAs/GaSb T2SL LEDs was developed and demonstrated. This design incorporates two separate, 16 stage InAs/GaSb SL active regions with varying InAs layer thicknesses built into a single vertical heterostructure. The device architecture is a three terminal device allowing for independent control of the intensity of each emission region. Each emitter region creates a contiguous pixel, capable of being planarized and mated to drive electronics.
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DOMINICI, STEFANO. "Numerical investigation of efficiency loss mechanisms in light emitting diodes and determination of radiative and non-radiative lifetimes for infrared optoelectronics." Doctoral thesis, Politecnico di Torino, 2017. http://hdl.handle.net/11583/2669184.

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The year 2015 was defined the international year of light and light-based technologies. This title did not come unexpected, the research activity in solid-state lighting intensified during the last decade striving to improve solid-state light sources in terms of power consumption and fabrication costs. Emerging technologies are going to improve and amplify the scope of applicability of current solid-state lighting technology. This work would like to give a contribution to scientific research in solid-state lighting on two fronts. First, by contributing to the determination of the optical properties of germanium and germanium-tin alloy and second, by searching for remedies to the temperature dependent efficiency loss in GaN/InGaN based blue light emitting diodes. On these premises, this work has been splitted in two parts. In part one, the Auger recombination properties of germanium and radiative and Auger recombination properties for germanium-tin alloy have been calculated. In case of germanium, the application of a minimum biaxial tensile strain turns the material to a direct gap semiconductor, suitable for active and passive optoelectronic applications. On the other hand, the germanium-tin alloy is even more interesting due to its tunable band-gap energy and the capability to turn into a direct gap material above a certain molar fraction. On top of that, both materials may represent cheaper alternatives to materials currently used for the fabrication of high performance photodetectors and active optoelectronic devices. For both materials, the Auger and radiative recombination properties have been determined through a novel numerical approach that applies a Green’s function based model to the full band structure of the material. In part two, the temperature dependent efficiency loss, experimentally detected in a reference GaN/InGaN based single quantum well light emitting diode, has been numerically studied by measn of a commercial simulation software Crosslight APSYS © . The charge transport mechanism in the device has been modeled through an improved drift-diffusion scheme and compared to the real device current-voltage characteristics. Once an agreement between real and simulated current-voltage characteristics was achieved, the impact of Shockley-Read-Hall recombination mechanism on the device internal quantum efficiency function of temperature has been throughfully studied.
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Duperron, Matthieu. "Conception et caractérisation de nanoantennes plasmoniques pour la photodétection infrarouge refroidie." Thesis, Troyes, 2013. http://www.theses.fr/2013TROY0030/document.

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L’imagerie infrarouge refroidie est portée par une demande forte pour des applications dans les secteurs militaire, industriel et spatial. Les enjeux actuels de ce marché sont le fonctionnement à haute température et la fonctionnalisation spectrale des détecteurs.Ces enjeux peuvent être adressés grâce à l’utilisation de résonateurs optiques et leur faculté à concentrer le champ électromagnétique. Ce travail de thèse montre comment des résonateurs plasmoniques peuvent être intégrés dans la filière HgCdTe.La théorie temporelle des modes couplés a été utilisée, de manière analytique, pour optimiser à travers la condition de couplage critique, l’absorption dans un résonateur plasmonique chargé par un semiconducteur. La conception d’une photodiode HgCdTe ultramince plasmonique est ensuite détaillée. Elle repose sur l’utilisation d’un mode optique résultant du couplage entre un mode plasmon de surface et un mode gap plasmon de cavité
The market for cooled infrared imaging technologies is growing fast due to a range of applications covering military, commercial and space. Current research for innovative systems focuses on high operating temperature and multispectral detectors.To achieve these aims, optical resonators can be used to concentrate electromagnetic fields in thin absorbing media. This thesis investigates the possibility of using plasmonic resonators for HgCdTe photodetection.Temporal coupled-mode theory is used to optimise analytically the absorption in a plasmonic resonator incorporating an absorbing semiconductor subject to the critical coupling condition. A design of a thin plasmonic HgCdTe diode is then described. This includes a hybrid plasmonic mode arising from the coupling between a surface plasmon and a cavity gap-plasmon mode
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Hollingworth, Andrew Roy. "Semiconductor optoelectronic infrared spectroscopy." Thesis, University of Surrey, 2001. http://epubs.surrey.ac.uk/842674/.

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We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) "phonon bottlenecking" was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered Ith by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the earner dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore this technique has been shown that the inhomogeneous broadening of the photoluminescence spectrum is not purely affected by just size and composition. We suggest that other processes such as state occupancy, In roughing, and exciton binding energies may account for the extra energy.
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Jollivet, Arnaud. "Dispositifs infrarouges à cascade quantique à base de semiconducteurs GaN/AlGaN et ZnO/ZnMgO." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS058/document.

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Ce mémoire de thèse est consacré à l’étude et au développement des hétérostructures semi-conductrices à base de GaN et ZnO. Ces matériaux sont particulièrement prometteurs pour le développement de composants optoélectroniques inter-sous-bandes infrarouges et notamment pour les dispositifs à cascade quantique. Ces semiconducteurs possèdent en effet plusieurs avantages pour la conception de dispositifs à cascade, tels qu’une grande discontinuité de potentiel en bande de conduction et une énergie du phonon LO très élevée. Ces propriétés se traduisent par la possibilité de développer des dispositifs couvrant une gamme spectrale allant du proche-infrarouge au térahertz et offrent la possibilité de réaliser des lasers à cascade quantique térahertz fonctionnant à température ambiante
This manuscript focuses on the study and on the development of semiconductor heterostructures based on GaN and ZnO material. These materials are particularly promising for the development of infrared optoelectronic intersubband devices in particular for quantum cascade devices. These semiconductors own several advantages to design quantum cascade devices such as a large conduction band offset and a large energy of the LO phonon. These properties predict the possibility to develop devices covering a large spectral range from near-infrared to terahertz and offer the possibility to realize terahertz quantum cascade lasers operating at room temperature
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Giannopoulos, Mihail. "Tunable bandwidth quantum well infrared photo detector (TB-QWIP)." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Dec%5FGiannopoulos.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, December 2003.
Thesis advisor(s): Gamani Karunasiri, James Luscombe. Includes bibliographical references (p. 59-61). Also available online.
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Cheetham, Kieran James. "GaInAsSbP alloys for mid-infrared optoelectronic devices." Thesis, Lancaster University, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.618809.

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The GaInAsSbP pentanary system has been utilised to grow epilayers on InAs substrates using Liquid Phase Epitaxy, and used to form the basis of. optoelectronic devices in the technologically important Mm spectral range (3-5 μm). The photoluminescence spectra of a single epilayer confirmed that the dominant radiative recombination mechanism was band-to-band in the pentanary layer. XRD analysis indicated the epilayers did not suffer from spinodal decomposition, and SEM and SIMS confirmed the layers were flat and abrupt. Raman spectroscopy was carried out over a wide range of lattice-matched InAsSbP compositions for the first time, before a further study on GaInAsSbP. Binary-like optical phonon signals were identified, and their position was found to directly relate to the composition of the alloy. Phonon signals resulting from alloy disorder were identified in the Raman spectra, which provides a valuable tool for future work on determining crystal quality. Prototype mesa diode devices were fabricated using wet etching with the addition of an InAsSbP window layer. Uncooled photodetectors were found to operate at room temperature, limited by diffusion current. Thermophotovoltaic cells using the same structure, designed for use with comparatively low temperature heat sources, were found to have a 33% fill factor. This is the first report of a pentanary alloy used for such an application. The corresponding photoresponse spectra exhibited two peaks, attributed to recombination in both the window layer and active region. Room temperature LEDs were demonstrated, operating with a 50% duty cycle, with their emission peaking at ~3.75 μm. The analysis of the excitation dependent electroluminescence allowed the electron effective mass of 0.018 mo to be calculated for the GaInAsSbP alloy. The devices were found to be limited by CHCC Auger recombination, even though the CHSH mechanism was suppressed by increasing the spin-orbit split-off band, as confirmed by high pressure measurements. The bandgap dependence of GalnAsSbP on pressure was found to be 10.7 meV/khar, which is believed to be the first such investigation for a III-v pentanary alloy. Multi-ring structures v/ere fabricated and current crowding effects were investigated. It was found that by employing multiple rings, rather than spot contacts, there was an improvement in the current spreading. and hence the output of the device. When only the outer-most contact was energised the current crowding under the contact was sufficient to facilitate whispering gallery modes. Lasing was achieved at 4K with drive currents of >300 mA, peaking at 3.3 μm.
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Books on the topic "Infrared optoelectronics"

1

Krier, Anthony, ed. Mid-infrared Semiconductor Optoelectronics. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8.

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Nunley, William. Infrared optoelectronics: Devices and applications. New York: M. Dekker, 1987.

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Dave, Birtalan, Nunley William 1928-, and Nunley William 1928-, eds. Optoelectronics: Infrared-visible-ultraviolet devices and applications. 2nd ed. Boca Raton: CRC Press, 2009.

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J, Brown Gail, and Razeghi M, eds. Photodetectors: Materials and devices IV : 27-29 January 1999, San Jose, California. Bellingham, Wash., USA: SPIE, 1999.

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Infrared, Sensors Devices and Applications (Conference) (3rd 2013 San Diego Calif ). Infrared Sensors, Devices, and Applications III: 26-28 August 2013, San Diego, California, United States. Bellingham, Washington: SPIE, 2013.

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W, Bryant Richard, and Business Communications Co, eds. Advanced optical materials, infrared, ultraviolet broadband, and solid state laser media. Norwalk, Conn., U.S.A: Business Communications Co., 1987.

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Fedorovich, Sizov Fedor, Teterkin Vladimir V, Society of Photo-optical Instrumentation Engineers. Ukraine Chapter., Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny)., and Uz͡h︡horodsʹkyĭ derz͡h︡avnyĭ universytet, eds. Material science and material properties for infrared optoelectronics: 30 September-2 October, Uzhgorod, Ukraine. Bellingham, Washington: SPIE, 1997.

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Fedorovich, Sizov Fedor, Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), Akademii͡a︡ nauk Ukraïny, and Society of Photo-optical Instrumentation Engineers., eds. Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics: 29 September-2 October 1998, Kiev, Ukraine. Bellingham, Wash., USA: SPIE, 1999.

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Fedorovich, Sizov Fedor, Kostyukevych Sergey, Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), Society of Photo-optical Instrumentation Engineers. Ukraine Chapter., Ukraine. Ministerstvo osvity i nauky., Ukrainian Physical Society, and Society of Photo-optical Instrumentation Engineers., eds. Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics: 22-24 May, 2000, Kiev, Ukraine. Bellingham, Washington: SPIE, 2001.

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Fedorovich, Sizov Fedor, Gumenjuk-Sichevska Johanna V, Kostyukevych Sergey, Institut poluprovodnikov (Akademii͡a︡ nauk Ukraïny), Society of Photo-optical Instrumentation Engineers. Ukraine Chapter., Akademii͡a︡ nauk Ukraïny, Ukraine. Ministerstvo osvity i nauky., and Society of Photo-optical Instrumentation Engineers., eds. Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics: 22-24 May 2002, Kiev, Ukraine. Bellingham, Wash., USA: SPIE, 2003.

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Book chapters on the topic "Infrared optoelectronics"

1

Rogalski, Antoni, and Krzysztof Chrzanowski. "Infrared devices and techniques." In Handbook of Optoelectronics, 633–86. Second edition. | Boca Raton : Taylor & Francis, CRC Press,: CRC Press, 2017. http://dx.doi.org/10.1201/9781315157009-18.

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Olesberg, J. T., and M. E. Flatté. "Theory of Mid-wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies." In Mid-infrared Semiconductor Optoelectronics, 3–92. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_1.

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Cockburn, J. "Mid-infrared Quantum Cascade Lasers." In Mid-infrared Semiconductor Optoelectronics, 323–55. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_10.

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Krier, A., X. L. Huang, and V. V. Sherstnev. "Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys." In Mid-infrared Semiconductor Optoelectronics, 359–94. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_11.

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Matveev, Boris A. "LED-Photodiode Opto-pairs." In Mid-infrared Semiconductor Optoelectronics, 395–428. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_12.

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Haywood, S., K. T. Lai, and M. Missous. "QWIP Detectors for the MWIR." In Mid-infrared Semiconductor Optoelectronics, 429–52. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_13.

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Ashley, T., and G. R. Nash. "Negative Luminescence." In Mid-infrared Semiconductor Optoelectronics, 453–85. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_14.

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Bhattacharya, P., A. D. Stiff-Roberts, and S. Chakrabarti. "Mid-infrared Quantum Dot Photodetectors." In Mid-infrared Semiconductor Optoelectronics, 487–513. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_15.

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Wei, Y., A. Gin, and M. Razeghi. "Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors." In Mid-infrared Semiconductor Optoelectronics, 515–45. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_16.

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Crowder, J. G., S. D. Smith, A. Vass, and J. Keddie. "Infrared Methods for Gas Detection." In Mid-infrared Semiconductor Optoelectronics, 595–613. London: Springer London, 2006. http://dx.doi.org/10.1007/1-84628-209-8_18.

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Conference papers on the topic "Infrared optoelectronics"

1

Li, Sheng S., Jerome T. Chu, Jiangchi Chiang, Jung H. Lee, and Anjali Singh. "Broadband quantum well infrared photodetectors." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344551.

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Dupont, Emmanuel, Hui C. Liu, Margaret Buchanan, Zbigniew R. Wasilewski, Daniel St-Germain, and Paul C. Chevrette. "Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344553.

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Qureshi, Jawad, and Kai Shum. "Ultrafast infrared-photon-induced optoelectronic switching." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Kong-Thon F. Tsen. SPIE, 1999. http://dx.doi.org/10.1117/12.349309.

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Kruck, Peter, Carlo Sirtori, Stefano Barbieri, Philippe Collot, Julien Nagle, Mattias Beck, Jerome Faist, and Ursula Oesterle. "Mid-infrared GaAs/AlGaAs quantum cascade lasers." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356945.

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Presting, Hartmut, Johannes Konle, Markus Hepp, Horst Kibbel, Klaus Thonke, Rolf Sauer, Wolfgang A. Cabanski, and Milan Jaros. "Mid-infrared silicon/germanium focal plane detector arrays." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Derek C. Houghton and Eugene A. Fitzgerald. SPIE, 1999. http://dx.doi.org/10.1117/12.342804.

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Olesberg, Jonathon T., Michael E. Flatte, Bennett J. Brown, Tom C. Hasenberg, Scott A. Anson, Thomas F. Boggess, and Christoph H. Grein. "Comparison of mid-infrared laser diode active regions." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Hong K. Choi and Peter S. Zory. SPIE, 1999. http://dx.doi.org/10.1117/12.344541.

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Rogalski, Antoni, and Robert Ciupa. "InGaAs versus HgCdTe for short-wavelength infrared applications." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344570.

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Keraenen, Kimmo, Martti Blomberg, Outi Rusanen, Pentti Karioja, Jussi Tenhunen, Harri K. Kopola, and Ari Lehto. "Main characteristics of a miniaturized multipurpose infrared spectrometer." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Michael R. Feldman, James G. Grote, and Mary K. Hibbs-Brenner. SPIE, 1999. http://dx.doi.org/10.1117/12.348309.

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Ershov, Maxim. "Generation-recombination noise in multiple quantum well infrared photodetectors." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344548.

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Malik, Alexander I., Manuela Vieira, Miguel Fernandes, Filipe Macarico, and Zinaida M. Grushka. "Near-infrared photodetectors based on a HgInTe-semiconductor compound." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344582.

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