Dissertations / Theses: 'Indium Phosphide'

1

Olsson, Fredrik. "Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration." Doctoral thesis, Stockholm : Laboratory of Semiconductor Materials, School of Information and Communication Technology, Royal Institute of Technology (KTH), 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4801.

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2

Boud, John Michael. "The electron mobility in indium phosphide." Thesis, University of Surrey, 1988. http://epubs.surrey.ac.uk/847279/.

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Hall effect and resistivity measurements have been carried out as a function of hydrostatic pressure and temperature on a number of samples of indium phosphide ranging from exceptionally pure to highly doped. In the case of pure and lightly doped InP an iterative solution of the Boltzmann Equation has been used successfully to describe the temperature and pressure dependence of mobility over the helium temperature range. Measurements on the highest mobility samples of InP ever grown suggest that the conduction band deformation potential is 6. 7eV. For the case of highly doped material it was found that a theory of scattering from a correlated distribution of impurities describes both the temperature and pressure dependence of mobility well. Pressure dependent mobility measurements on a sample having an impurity density close to the Mott transition suggest that the inclusion of impurity band conduction in the analysis is necessary even at nitrogen temperatures and above. Such an analysis is used successfully to describe the temperature and pressure dependence of both mobility and Hall carrier concentration.

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3

Chatterjee, Basab. "Hydrogen passivation of heteroepitaxial indium phosphide /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487947908403973.

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4

Naseem, S. "Fabrication and characterization of indium phosphide/indium tin oxide solar cells." Thesis, University of Newcastle Upon Tyne, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.355860.

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5

Grover, Rohit. "Indium phosphide based optical micro-ring resonators." College Park, Md. : University of Maryland, 2003. http://hdl.handle.net/1903/261.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2003.
Thesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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6

Blight, Kyle Raymond. "The electronic structure of indium phosphide surfaces." Thesis, Blight, Kyle Raymond (1993) The electronic structure of indium phosphide surfaces. PhD thesis, Murdoch University, 1993. https://researchrepository.murdoch.edu.au/id/eprint/51642/.

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Indium phosphide (InP) is a member of a group of compounds known as III-V semiconductors. InP's direct band gap and high carrier mobility, approximately twice that of Si, makes it the ideal candidate for the manufacture of electronic devices such as field effect transistors. However, the wide spread use of InP has been restricted by the lack of a suitable compound or native oxide that could be used to form a passivating film on the surface. To date such films have been shown to contain defects within the film or at the overlayer-substrate interface. These defects trap the charge carriers and inhibit the device performance. The trapping states are also known to be formed by the deposition of metals. The main objective of the work described in this thesis was to monitor the change in the electronic structure of n and p-InP under a variety of conditions in order to elucidate the physicochemical origin of the extrinsic surface states. In addition, the properties of some inorganic and organic sulphur compounds were investigated for use as passivating agents with which to form an inert and insulating film on the surface. Some of these compounds were found to have potential for use in the construction of electronic devices. Electrochemical and ultra high vacuum techniques were utilised to monitor the electronic characteristics of the surfaces as a function of oxygen exposure. A simplex curve fitting algorithm was used to fit a model of the electronic structure of the surface to the surface photovoltage spectra. The results are expressed as surface potential curves. In addition to the states tailing into the band gap from the band edges, three midgap states were identified at approximately 0.25, 0.50 and 0.75 of the gap energy. The origin of these surface states was attributed to a disordered surface layer generated by the adsorption processes. A model of the origin and distribution of the surface states is discussed.

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7

Tsai, Cheng-Hung. "Photoluminescence of gallium phosphide and indium gallium phosphide doped with rare-earths." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1173207968.

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8

Demerdjiev, Penka. "Opto-electrical properties of indium gallium arsenic phosphide quaternary epilayers and multiple quantum wells lattice matched to indium phosphide." Thesis, University of Ottawa (Canada), 1995. http://hdl.handle.net/10393/9722.

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$In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}$ epilayers lattice matched to InP and $In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}/InP$ Multiple Quantum Wells (MQWs) grown by Chemical-Beam Epitaxy (CBE) are being studied systematically using the Photovoltaic (PV) effect. At first, the Schottky barriers on the interfaces (metal-semiconductor, metal-insulator-semiconductor) are determined as an important factor for the electrical and optical properties of the samples. Samples with identical Schottky contact deposition but with an insulating layer on the front surface, have shown much smaller leakage current and yield enhanced barrier heights. The photovoltaic signal in the temperature interval 4-300K has maximum amplitude at about 150-180K for the MQW samples and at about 190K for the epilayer. An applied electric field changes the integrated intensity and spectrally shifts the allowed and forbidden transitions observed in bias dependent PV spectra of various InGaAsP/InP MQWs. The combined effect of two external factors, the thermal ionization and the electric field on the shape and magnitude of the 11H exciton peak, are discussed in terms of exciton binding energy and field ionization. The optically induced changes and energy shifting of the 11H/ exciton peak are observed, when excitation dependent double beam experiments are conducted on the $In\sb{0.72}Ga\sb{0.28}As\sb{0.68}P\sb{0.32}/InP$ MQWs. The photomodulation of the internal fields through carrier transport results in observing effective nonlinearities at milliwatt power levels. The experimentally measured transition energies for the MQWs show good agreement with the envelope wave function calculations. The observed Schottky barrier heights and band gap energies are consistent with the interpolation scheme estimations. (Abstract shortened by UMI.)

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9

Hoffmann, Eric A. 1982. "The thermoelectric efficiency of quantum dots in indium arsenide/indium phosphide nanowires." Thesis, University of Oregon, 2009. http://hdl.handle.net/1794/10552.

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xi, 193 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.
State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be loaded with electrons, one-by-one, and subsequently unloaded using source and drain electrical contacts. As such, quantum dots are uniquely tunable platforms for performing quantum transport and quantum control experiments. Voltage-biased electron transport through quantum dots has been studied extensively. Far less attention has been given to thermoelectric effects in quantum dots, that is, electron transport induced by a temperature gradient. This dissertation focuses on the efficiency of direct thermal-to-electric energy conversion in InAs/InP quantum dots embedded in nanowires. The efficiency of thermoelectric heat engines is bounded by the same maximum efficiency as cyclic heat engines; namely, by Carnot efficiency. The efficiency of bulk thermoelectric materials suffers from their inability to transport charge carriers selectively based on energy. Owing to their three-dimensional momentum quantization, quantum dots operate as electron energy filters--a property which can be harnessed to minimize entropy production and therefore maximize efficiency. This research was motivated by the possibility to realize experimentally a thermodynamic heat engine operating with near-Carnot efficiency using the unique behavior of quantum dots. To this end, a microscopic heating scheme for the application of a temperature difference across a quantum dot was developed in conjunction with a novel quantum-dot thermometry technique used for quantifying the magnitude of the applied temperature difference. While pursuing high-efficiency thermoelectric performance, many mesoscopic thermoelectric effects were observed and studied, including Coulomb-blockade thermovoltage oscillations, thermoelectric power generation, and strong nonlinear behavior. In the end, a quantum-dot-based thermoelectric heat engine was achieved and demonstrated an electronic efficiency of up to 95% Carnot efficiency.
Committee in charge: Stephen Kevan, Chairperson, Physics; Heiner Linke, Member, Physics; Roger Haydock, Member, Physics; Stephen Hsu, Member, Physics; David Johnson, Outside Member, Chemistry

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趙有文 and Youwen Zhao. "Thermally induced native defects and conduction conversion in the N-type InP." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B3123978X.

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Zhao, Youwen. "Thermally induced native defects and conduction conversion in the N-type InP /." Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B21347517.

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12

Pang, Zhengda. "Schottky contacts to indium phosphide and their applications." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ30109.pdf.

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13

Eriksson, Urban. "Technologies for monolithic indium phosphide optoelectronic integrated circuits /." Stockholm, 1999. http://www.lib.kth.se/abs99/erik0623.pdf.

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14

Graham, C. S. "Evaluation of indium phosphide based ultrafast optoelectronic switches." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1306710/.

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The use of opto-electronic devices for ultrafast switching applications is a practical alternative to all electronic devices due to their operating ceiling. The harnessing of femto-second laser pulses to momentarily switch devices has been the centre of research for over twenty years since the pioneering work of Auston. Though the design of the electrodes of an Auston switch has not altered to any great effect, the light absorbing material has been the primary occupation of researchers. The ultrafast behaviour of these materials is due to the sub picosecond quenching of photogenerated carriers caused by deep trapping levels pinned between the valence and conduction bands of the material. The creation of these carrier traps is due to the presence of non-stoichiometric features in the semiconductor lattice structure. There have been several attempts to create such material. Originally based on Silicon on Sapphire materials, the most successful ultrafast photoconductors were found to be low temperature grown Gallium Arsenide. However this large bandgap material requires cumbersome gas or titanium sapphire lasers as the pulsed light source. Of great interest are the Indium Phosphide based materials which can harness the 1550 nm wavelength technology of optical telecommunications where erbium fibre and solid state mode-locked lasers have been developed which are low cost, compact and could enable on-chip integration. One successful approach to achieve 1550 nm absorbing ultrafast photoconductors has been the use of high energy ion irradiation of Indium Gallium Arsenide (In0.53Ga0.47As) lattice matched to Indium Phosphide substrates. There has been research of proton and heavy ion irradiation of 1550 nm wavelength absorbing materials; but no ultrafast switching devices have been fabricated from lighter ion irradiation. The advantages of this method are the higher defect concentrations achievable compared to proton irradiation and the minimising chemical changes to the material substrates which have been observed with heavy ion irradiation. The implanted ion chosen in this project was Nitrogen because of its mass and inert behaviour. In order to demonstrate the ultrafast behaviour of the Nitrogen ion implanted InGaAs, and to show that it is a practical alternative to LT-GaAs based devices, a set of ultrafast photoconductive sampling switches were designed, fabricated and evaluated. This thesis describes the design, fabrication and evaluation of InP based ultrafast switches capable of sampling waveforms up to 20 GHz. The principle mechanisms involved in the ultrafast quenching of photocarriers was investigated and the optimum design for the photoconductive switch determined. An equivalent circuit of the switch was devised and its expected performance modelled with regard to the on and off state resistances. Using transform mapping techniques, the switch capacitance and waveguide dimensions were calculated. The switches were fabricated using wet etching and metal lift-off techniques prior to evaluation of the pre-irradiated devices. Once the expected behaviour of the pre-implanted switch had been characterised, the switches were implanted by high energy nitrogen ions. These implanted devices were then evaluated and their ultrafast characteristics confirmed. With a carrier recombination time of 5 picoseconds (FWHM) being measured, this is the first time that deep nitrogen implantation has been used to create ultrafast InP based switches.

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15

Woo, Robyn Lai-wun. "Crystal growth and properties of indium phosphide nanowires." Diss., Restricted to subscribing institutions, 2008. http://proquest.umi.com/pqdweb?did=1692370461&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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16

Aston, Mark Edward. "Downstream etching of indium phosphide and indium with hydrogen atoms and methyl radicals." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/28883.

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The etching of indium phosphide and indium by H atoms and methyl radicals has been studied in a discharge flow system at temperatures between 25 and 300°C. The results indicate that the hydrogen atoms react with InP to produce In metal globules and PH₃(g) at temperatures greater than 160°C. Methyl radicals were not found to react with InP. However these radicals were found to react with indium metal and the globules that are produced in the reaction of hydrogen atoms with InP. Reactions were conducted by alternately etching with H atoms and then with CH₃ radicals. Rate constants for these reactions were determined at 300°C and these values were found to be consistent with the continuous etch rates observed for a mixture of H atoms and CH₃ radicals. The etched surfaces were studied by SEM, XPS and surface profilometry and their properties found to be consistent with the proposed mechanism for the reaction.
Science, Faculty of
Chemistry, Department of
Graduate

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Amarnath, Kuldeep. "Active microring and microdisk optical resonators on indium phosphide." College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/3513.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2006.
Thesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Cholan, Hemavathy. "Deep level transient spectroscopy of magnesium doped indium phosphide /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,154.

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19

Xiaoyi, Wang. "Growth and Characterization of Polycrystalline Indium Phosphide on Silicon." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-128231.

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III-V thin film solar cells attract large interest among the scientific community as a highly efficient solar energy source. High cost of the III-V materials, however, is the fundamental limitation for using these materials as a household energy source. Integrating these materials on low cost and large area Si wafer both for photovoltaic and photonics application is a field of research that draw intense attention of the scientific community. The fundamental challenge to fabricate III-V materials directly on silicon wafers arises from the disparity in polarity, large lattice and thermal mismatch between the III-V semiconductors and Si. In this work, we introduce a method to synthesize polycrystalline InP directly on silicon wafer by using In2O3 or In as intermediate material. The crystal quality and conversion degree of the intermediate material and the final poly-InP were analyzed by Powder X-ray Diffraction. Depending on the type of the intermediate material and substrate orientation (Si (100) or Si (111)), the crystallite size was found to be varying from 739 to 887 nm. The surface morphology of poly-InP was studied by using Atomic Force Microscopy. The root mean square surface roughness of the InP thin film was found to be varying from 314 to 1944 nm. Structural and optical qualities of intrinsic and sulfur doped InP layers were compared at different growth conditions (growth time, growth temperature, PH 3 source flow), intermediate material type(In2O3 and In) and substrate type (Si (100) and Si (111)). Within the investigated experimental parameter range, the higher PH 3 source flow at longer growth time improved the structural quality of InP layer grown on In 2O3 coated on silicon substrate, which also result in good optical quality. Comparison of structural and optical qualities of InP grown from In and indium oxide precoated substrates show that the former gave better quality InP. These achievements will be helpful in the realization of the high efficiency III-V solar cell on silicon substrate as a low cost option.

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20

Reeder, A. A. "Infra-red studies on indium phosphide and related semiconductors." Thesis, University of Nottingham, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332694.

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Su, Ge. "Fabrication and characterisation of indium phosphide micro / nano-structures." Thesis, University of Birmingham, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.409482.

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22

O'Keefe, Matthew Francis. "Optimisation of contacts for indium phosphide millimetre-wave devices." Thesis, University of Leeds, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277202.

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Rouvalis, E. "Indium phosphide based photodiodes for continuous wave terahertz generation." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1331904/.

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This thesis is concerned with the generation of Continuous Wave Terahertz signals from photomixing sources based on the InP material system. Continuous Wave systems are expected to dominate future Terahertz technology where agile, high resolution systems are required. Photomixing offers a low cost and compact solution for broadband Terahertz systems. Driven by the established Telecommunications industry, the InP material system has numerous devices to offer operating at 1550 nm. In this thesis the Travelling-Wave Uni- Travelling Carrier Photodiode (TW-UTC-PD) is proposed as a novel photomixing element that combines the advantages of other previously demonstrated devices. The theory of ultra-fast photodetectors is studied thoroughly and theoretical considerations towards advanced InP-based photodetectors are given. A figure of merit for the Photonic-to-Terahertz conversion efficiency is defined here. In order to maximise this efficiency different input optical waveguides and output planar antennas are studied. A semi-analytical model that predicts the frequency response and the efficiency is developed as an essential tool for the design of these devices. TW-UTC-PDs integrating a mode converting optical waveguide and two types of output configurations were fabricated. Devices with a Coplanar Waveguide output were tested at DC and in the millimetre-wave range. DC responsivities of up to 0.53 A/W at 1550 nm were achieved together with a 3-dB bandwidth of 105 GHz. The same devices demonstrated an output power of 1 mW at 200 GHz. Antenna integrated devices achieved 40 μW at 510 GHz, 5 μW at 1.02 THz and 0.5 μW at 1.53 THz at a photocurrent of 13 mA when pumped with less than 40 mW of optical power. Packaged devices showed broadband response up to 1 THz. The achievements described in this thesis are anticipated to play an important role towards Continuous Wave photomixing Terahertz systems based on InP-based components. In combination with recent demonstrations of detection of millimetre-wave signals with the same device, efficient and compact spectroscopic and communication systems based on the TW-UTC-PD that are also capable of a high degree of photonic integration should be feasible.

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24

Peereboom, Nick C. (Nicolaas Christopher) Carleton University Dissertation Engineering Electrical. "Optical two-wave mixing in iron-doped indium phosphide." Ottawa, 1992.

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25

Manandhar, Sanjeev. "High Speed ROM for Direct Digital Synthesizer Applications in Indium Phosphide DHBT Technology." Fogler Library, University of Maine, 2006. http://www.library.umaine.edu/theses/pdf/ManandharSX2006.pdf.

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26

Pruessner, Marcel Werner. "Indium phosphide based optical waveguide MEMS for communications and sensing." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2731.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2005.
Thesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Allan, Gary R. "Coherent dynamics of excitons and continuum excitations in indium phosphide." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ27595.pdf.

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28

Gunda, Ramakrishna. "Nanoripples formation in calcite and indium phosphide (InP) single crystals." [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0002292.

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29

Greenspan, Jonathan. "Selective area epitaxy for indium phosphide based photonic integrated circuits." Thesis, McGill University, 2002. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=82883.

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The ability to integrate multiple photonic devices on a single substrate has turned out to be very advantageous in the fabrication of components for optical communication networks. For example, improved fiber coupling can be achieved by integrating a modulator with an optical mode converter. However, current technology is very limited in its ability to fabricate such photonic integrated circuits (PIC).
We report on a selective area epitaxy (SAE) process suitable for the fabrication of a PIC. The process includes a quantitative model, which for the first time, is capable of predicting the growth rate and composition of thin films selectively deposited by metalorganic chemical vapour deposition in areas close to the dielectric mask as well as areas several microns away. The accuracy of the model is demonstrated by comparing simulation results with experimental measurements of the thickness and composition profiles obtained by surface profilometry and energy dispersed X-ray respectively.
The process is applied to the fabrication of an elecroabsorption modulator and optical mode converter, monolithically integrated on an InP substrate. As part of the fabrication, quantitative modeling of the converter waveguide core deposition is employed to achieve a thickness profile previously designed by beam propagation calculations. Modeling is also used to predict the composition and strain shifts introduced by selective deposition, enabling the composition to be designed such that the maximum strain is minimized. Device measurements demonstrate that SAE is successfully used for the fabrication of a PIC with characteristics superior to those found in conventional devices.

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Awg, Hj Kasim Awg Makarimi. "Threshold current temperature dependence of indium phosphide quantum dot lasers." Thesis, Cardiff University, 2014. http://orca.cf.ac.uk/68908/.

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InP quantum dot (QDs) lasers grown on GaAs substrates have potential applications in photodynamic therapies, as multi-wavelength sources and for biophotonic sensing. However, to make these devices practical, further improvements are required in threshold current at elevated temperature. The main reason for this study is to identify the factors in the improved performance of lasers with respect to lowering the threshold current density and lowering the temperature dependence of threshold current density for samples with different Ga composition in the upper confining layer (UCL). A new way of determining the mode loss per unit length (αi) was introduced by extracting the peak net modal gain (G - αi) value of 6 cm-1 for a 2-mm-long laser from the averaged value of the modal gain (G), which is more accurate and significant than determining αi just at the value which loss (at net modal absorption or A + αi) and gain (at net modal gain or G - αi) spectra tend to at low photon energy. The highest αi value is 2.30 cm-1 for Ga = 0.54, 1.10 cm- 1 for Ga = 0.52, and Ga = 0.56 and 0.58 have almost zero αi values. I show that to maintain the same peak modal gain at 300 K at a higher temperature, for instance 360 K, one will need to compensate for two situations. First, increasing the current density to achieve 300 K inversion level (or the difference between the quasi-Fermi level separation and the absorption edge) to compensate for the increased nonradiative recombination processes and secondly adding more current density on top of that to compensate for the carrier spreading to higher energy states, in order to reach the peak net modal gain required at 360 K. Spontaneous emission rate spectra measured at J6 cm -1 show more filled QW states for Ga = 0.54 compared to Ga = 0.58 and compared with data taken at constant inversion level indicates that more carriers are supplied to the Ga = 0.54 to compensate for its high optical mode loss (αi), when compared to Ga = 0.58. As the temperature increases, some of the energetic carriers from the QW escape to the lower confining layer (LCL) and spontaneous emission measurements show this happens more in the Ga = 0.58 than in the Ga = 0.54. Absorption measurements indicate this is because QD and QW states move closer to the LCL states as the Ga composition in the well increases. Three series of samples grown at different times but with similar designs were compared in the study. Lowering the Al composition in the cladding layer, tends to lower the optical confinement factor (Γ), which causes the threshold current density to be increased in Series 1. The results show that αi plays the dominant role, not only in lowering the Jth but also lowering the threshold current temperature-dependence of these series.

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Seltzer, Colin Phillip. "Indium phosphide based multiple quantum well lasers : physics and applications." Thesis, University of Surrey, 1994. http://epubs.surrey.ac.uk/844392/.

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Multiple quantum well lasers based on the III-V compound semiconductor indium phosphide were studied in this thesis. Systematic investigations were carried out on the effects of quantisation and strain on the temperature sensitivity of threshold current, modulation properties, external cavity operation and the 'gain lever' effect. Trends in the temperature sensitivity of threshold current for lasers of various lengths and quantum well numbers can be understood in terms of the nonlinear gain-current density relation. However, compared to bulk active region devices there was no significant improvement. It is unclear at present whether this is due to the temperature sensitivity of optical gain or Auger recombination. Relative intensity noise measurements were used to compare the modulation properties of lattice-matched and strained MQW lasers. This method gives an estimate of the differential gain and was used to study the properties of devices which were unsuitable for high speed applications. These measurements showed that gain saturation and carrier transport effects may be significant in certain laser structures. Band-filling effects due to the reduced volume and modified density of states were utilised in the demonstration of a grating external cavity laser operating across the 1.3 mum optical fibre window. This configuration results in single-mode operation across the gain spectrum of the laser. High output power was exhibited across a wide tuning range. The 'gain lever' effect uses the nonlinear gain-current density relation to enhance the amplitude modulation efficiency and the signal-to-noise-ratio. MQW and bulk devices of different length and split ratio were compared. It was seen experimentally and numerically that the nonlinearity causing this effect also increases the distortion. Finally, it is discussed that further modifications to laser properties may be seen in active regions incorporating quantum wires and boxes.

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Rybicki, George Charles. "Proton irradiation damage in zinc and cadmium doped indium phosphide." Case Western Reserve University School of Graduate Studies / OhioLINK, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=case1057001628.

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Sun, Yanting. "Epitaxial Lateral Overgrowth of Indium Phosphide and Its Application in Heteroepitaxy." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3642.

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Monolithic integration of optoelectronics on silicon is adream. This thesis deals with the studies on the heteroepitaxyof indium phosphide on silicon substrate towards making thatdream come true. Materials growth issues, characterization anddefect identification are addressed.

Epitaxial lateral overgrowth (ELOG) technique is used togrow high quality epitaxial indium phosphide on a siliconsubstrate provided with a low quality indium phosphide seedlayer. Hydride vapor phase epitaxy is used for ELOG. The growthparameters were optimized first by carrying out ELOGexperiments on an InP substrate. The lateral growth rate isstrongly dependent on the orientation of the openings,thehighest growth rate being for the openings oriented at 30ºand 60º off [110]directions. But the vertical growth rateis relatively unaffected by the opening orientation. Theobservation of an inhomogeneous and orientation dependentdopant distribution within the same layer has been explained byinvoking the bonding configurations exposed to theincorporating dopant atoms in the different emergingplanes.

When ELOG of InP is conducted on InP/Si, unlike that on InPsubstrates, the lateral growth is not symmetric on both sidesdue to the propagation of defects from the seed layer. Forexample, a higher concentration of threading dislocationsintersecting the surface of the {111}A emerging planes wouldcause a higher growth rate of these planes. The growth rate of{111}A planes with respect to the others can also be caused bythe vapor phase supersaturation as predicated byBurton-Cabrera-Frank model. The determined dislocation densityin the ELOG InP on InP/Si is ~ 4X10⁷cm^-2, which is nearly two magnitude lower than in theseed layer (~ 4X10⁹cm^-2). If the seed layer is of a better quality, theELOG layer will also be. Combination of high resolution x-raydiffraction reciprocal lattice mapping and low temperaturephotoluminescence indicates that the ELOG InP layer with highaspect ratio is nearly strain-free.

When ELOG of sulfur doped InP is conducted on ring shapedopenings on InP/Si substrate instead of stripe openings,octahedral shaped ELOG InP templates with smooth surface areformed. Strain compensated InGaAsP 6 periods multi-quantumwells (MQW) at 1.5 μm wavelength (target value) were grownon these templates by metalorganic vapor phase epitaxy. RT-PLis indicative of a good quality ELOG layers. Optimized ELOG onring openings may become very attractive for heteroepitaxy ofIII-V compounds on silicon.

As an extension of ELOG of InP on InP/Si, growth of InP isalso conducted on planar Focused-Ion-Beam (FIB)-modified (001)GaAs substrate. The impacts of the III/V ratio,crystallographic orientation of implanted lines andimplantation dose were explored. The choice of suitable growthconditions makes it possible to obtain continuous InP wiresaligned in all possible directions.

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Shishido, Reid Tadashi. "Load-pull measurement and simulation on indium phosphide heterojunction biopolar transistors." Thesis, University of Hawaii at Manoa, 2003. http://hdl.handle.net/10125/6987.

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Indium-phosphide (InP) based amplifiers have recently attracted a great deal of attention due to their superior power and efficiency characteristics for high-performance telecommunications. A state-of-the-art InP heterojunction bipolar transistor was characterized using an automated load-pull measurement system to determine the optimum load conditions for future applications at 10 GHz. These measurements yielded power-added efficiencies ranging from 54-63% for Class A to Class C/E bias conditions. Simulations using a SPICE model confirmed the accuracy of the model at 10 GHz with simulated efficiencies between 44-58%.
x, 73 leaves

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Bhattacharya, Indrasen. "Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon." Thesis, University of California, Berkeley, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10685771.

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III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices.

For the optical transmitter side of the photonic link, InGaAs quantum wells have been grown in a core-shell manner within InP nanopillars. Position-controlled growth with varying pitch is used to systematically control emission wavelength across the same growth substrate. These nanopillars have been fabricated into electrically-injected quantum well in nanopillar LEDs operating within the silicon transparent 1400–1550 nm spectral window and efficiently emitting micro-watts of power. A high quality factor (Q ~ 1000) undercut cavity quantum well nanolaser is demonstrated, operating in the silicon-transparent wavelength range up to room temperature under optical excitation.

We also demonstrate an InP nanopillar phototransistor as a sensitive, low-capacitance photoreceiver for the energy-efficient operation of a complete optical link. Efficient absorption in a compact single nanopillar InP photo-BJT leads to a simultaneously high responsivity of 9.5 A/W and high 3dB-bandwidth of 7 GHz.

For photovoltaic energy harvesting, a sparsely packed InP nanopillar array can absorb ~90% of the incident light because of the large absorption cross section of these near-wavelength nanopillars. Experimental data based on wavelength and angle resolved integrating sphere measurements will be presented to discuss the nearly omnidirectional absorption properties of these nanopillar arrays.

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Khalil, Ali Saied, and askhalil2004@yahoo com. "Heavy-Ion-Irradiation-Induced Disorder in Indium Phosphide and Selected Compounds." The Australian National University. Research School of Information Sciences and Engineering, 2007. http://thesis.anu.edu.au./public/adt-ANU20070716.140841.

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Indium phosphide (InP) is an important III-V compound, with a variety of applications, for example, in light emitting diodes (LED), InP based photonic crystals and in semiconductor lasers, heterojunction bipolar transistors in integrated circuit applications and in transistors for microwave and millimeter-wave systems. The optical and electrical properties of this compound can be further tailored by ion implantation or prospectively by swift heavy ion beams. ¶ Thus knowledge of ion-induced disorder in this material is of important fundamental and practical interest. However, the disorder produced during heavy ion irradiation and the subsequent damage accumulation and recovery in InP is far from being completely understood. In terms of the damage accumulation mechanisms, the conclusions drawn in the numerous studies performed have often been in conflict with one another. A factor contributing to the uncertainties associated with these conflicting results is a lack of information and direct observation of the building blocks leading to the ultimate damage created at high ion fluences as an amorphous layer. These building blocks formed at lower fluence regimes by single ion impacts can be directly observed as isolated disordered zones and ion tracks for low energy and swift heavy ion irradiation, respectively. ¶ The primary aim of this work has thus been to obtain a better understanding of the disorder in this material through direct observations and investigation of disorder produced by individual heavy ions in both energy regimes (i.e. elastic and inelastic energy deposition regimes) especially with low ion fluence irradiations. In this thesis the heavy ion induced disorder introduced by low energy Au ions (100 keV Au+) and high energy Au (200 MeV Au+16) ion irradiation in InP were investigated using Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS/C) and Atomic Force Microscopy (AFM). ¶ The accumulation of damage due to disordered zones and ion tracks is described and discussed for both low energy and swift ion irradiation respectively. ¶ The in-situ TEM annealing of disordered zones created by 100 keV Au+ ion irradiation shows that these zones are sensitive to electron beam irradiation and anneal under electron energies not sufficient to elastically displace lattice atoms, i.e. subthreshold energies for both constituent atoms In and P. ¶ Ion tracks due to swift heavy ion irradiation were observed in this material and the interesting track morphology was described and discussed. The surface nanotopographical changes due to increasing fluence of swift heavy ions were observed by AFM where the onset of large increase in surface roughness for fluences sufficient to cause complete surface amorphization was observed. ¶ In addition to InP, the principle material of this project, a limited amount of TEM observation work has been performed on several other important compounds (apatite and monazite) irradiated by 200 MeV Au+ ions for comparative purposes. Again the observed segmental morphology of ion tracks were shown and possible track formation scenario and structure were discussed and similarities were drawn to the previously observed C60 cluster ion tracks in CaF2 as more knowledge and data base exist about defect dynamics and formation in that material.

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Gersdorf, Ingrid. "Spectroscopic analysis of erbium-doped silicon and ytterbium-doped indium phosphide." [S.l. : Amsterdam : s.n.] ; Universiteit van Amsterdam [Host], 2001. http://dare.uva.nl/document/60743.

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伍寶洪 and Po-hung Ng. "Studies of iron acceptors in indium phosphide by photoconductivity andphotoluminescence techniques." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1990. http://hub.hku.hk/bib/B31231950.

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Evans, D. A. "The metal-indium phosphide (110) interface : Interactions and Schottky barrier formation." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234721.

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Shih, Ta-Ming Ph D. Massachusetts Institute of Technology. "Indium phosphide based integrated photonic devices for telecommunications and sensing applications." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/75449.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (p. 193-205).
Photonics is an exciting area of study that is situated at the cross-section of physics, material science, and electrical engineering. The integration of photonic devices serves to reduce the size, weight, power consumption, and cost of the photonics- based systems, whose applications can be as disparate in nature as communications and medicine. In particular, an integrated all-optical logic gate and wavelength converter for fiber-optic telecommunications and an integrated tunable laser for trace-gas sensing are investigated in this thesis. These devices are fabricated in the indium phosphide (InP) material system, which includes InP and the ternary/quaternary III-V semiconductors that can be grown closely lattice-matched on the InP substrate. The all-optical logic gate is designed as a Mach-Zehnder interferometer with semi- conductor optical amplifiers as active nonlinear elements that are optically coupled to the passive waveguides using the asymmetric twin waveguide technique. The device is grown and fabricated monolithically and carrier-dependent optical interference is demonstrated at the 1.55 [mu]m wavelength. The tunable diode laser is designed to operate in the wavelength range of 1.55 [mu]m - 2 [mu]m for trace-gas spectroscopic sensing and comprises of strained InGaAs quantum wells. The laser is monolithically fabricated using mask-less lithography techniques and tuning is demonstrated in Fabry-Perot cavity lasers under continuous-wave operation. A ring-coupled 2 [mu]m wavelength laser is designed that will exhibit a tuning range of tens of nanometers.
by Ta-Ming Shih.
Ph.D.

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Xie, Lisi Ph D. Massachusetts Institute of Technology. "Experimental and theoretical investigation of indium phosphide quantum dot growth mechanisms." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/107871.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemical Engineering, 2016.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 189-198).
Indium phosphide (InP) quantum dots (QDs) stand out as the most promising candidate to replace the currently commercialized cadmium-containing materials for optoelectronic applications. This thesis focuses on using experimental and theoretical methods to study growth mechanisms of InP QDs from precursor conversion to final nanocrystal formation. As the key experimental platform, a high temperature and high pressure microfluidic system was first applied to study the effect of group V precursor reactivity on the QD growth. High-pressure flow conditions allow for precise control of synthetic parameters and also the use of low-boiling-point solvents for synthesis with enhanced mixing. Results showed that lowering the precursor reactivity did not significantly improve the QD quality, contradicting the original hypothesis. The unexpected role of precursor chemistry motivated investigation into the early-stage QD growth mechanisms. First-principles approaches were used without any prior assumptions on reaction pathways. Simulations showed that small clusters with indium-rich surfaces form in the early-stage QD growth. In and P precursors have different roles, with P precursors controlling the reaction energy, and In precursors determining the reaction barrier. With clusters identified as important growth intermediates in both simulations and experiments, their role during the QD formation was then investigated with a one-solvent protocol, which combined flow synthesis, GPC purification and MALDI mass characterization. Experiments revealed that similar clusters exist during the late-stage nanocrystal growth, suggesting their role as a continuous supply for the QD formation. Lastly, a QD size tuning strategy was developed involving the use of weakly associated ligands to synthesize cluster-free InP QDs with different sizes and narrow size distributions. This synthetic approach enabled the construction of a correlation between the absorption features and the mass and concentration of InP QDs. The importance of In precursor quality became apparent after exploring effects of impurities and solvents. For example, when water and hydroxide/oxide species contaminate In precursors, the growth of InP QDs are inhibited and batch-to-batch variations are observed.
by Lisi Xie.
Ph. D.

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42

Siwak, Nathan Paul. "Indium phosphide MEMS cantilever waveguides with integrated readout for chemical sensing." College Park, Md.: University of Maryland, 2007. http://hdl.handle.net/1903/7681.

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Thesis (M.S.) -- University of Maryland, College Park, 2007.
Thesis research directed by: Dept. of Electrical and Computer Engineering Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Ng, Po-hung. "Studies of iron acceptors in indium phosphide by photoconductivity and photoluminescence techniques /." [Hong Kong : University of Hong Kong], 1990. http://sunzi.lib.hku.hk/hkuto/record.jsp?B12718579.

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44

Roberts, Paul Philip. "Components for Wide Bandwidth Signal Processing in Radio Astronomy." University of Sydney. Electrical Engineering, 2003. http://hdl.handle.net/2123/603.

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In radio astronomy wider observing bandwidths are constantly desired for the reasons of improved sensitivity and velocity coverage. As observing frequencies move steadily higher these needs become even more pressing. In order to process wider bandwidths, components that can perform at higher frequencies are required. The chief limiting component in the area of digital spectrometers and correlators is the digitiser. This is the component that samples and quantises the bandwidth of interest for further digital processing, and must function at a sample rate of at least twice the operating bandwidth. In this work a range of high speed digitiser integrated circuits (IC) are designed using an advanced InP HBT semiconductor process and their performance limits analysed. These digitiser ICs are shown to operate at up to 10 giga-samples/s, significantly faster than existing digitisers, and a complete digitiser system incorporating one of these is designed and tested that operates at up to 4 giga-samples/s, giving 2 GHz bandwidth coverage. The digitisers presented include a novel photonic I/O digitiser which contains an integrated photonic interface and is the first digitiser device reported with integrated photonic connectivity. In the complementary area of analogue correlators the limiting component is the device which performs the multiplication operation inherent in the correlation process. A 15 GHz analogue multiplier suitable for such systems is designed and tested and a full noise analysis of multipliers in analogue correlators presented. A further multiplier design in SiGe HBT technology is also presented which offers benefits in the area of low frequency noise. In the effort to process even wider bandwidths, applications of photonics to digitisers and multipliers are investigated. A new architecture for a wide bandwidth photonic multiplier is presented and its noise properties analysed, and the use of photonics to increase the sample rate of digitisers examined.

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Augustine, Godfrey. "Modeling, fabrication, and characterization of InP thin films and dvices for optoelectronic applications." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/15382.

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Hatami, Fariba. "Indium phosphide quantum dots in GaP and in In0.48Ga0.52P growth and properties /." [S.l.] : [s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=968462413.

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Nkanta, Julie. "Characterization and simulations of long wavelength indium aluminum gallium arsenideindium phosphide lasers." Thesis, University of Ottawa (Canada), 2008. http://hdl.handle.net/10393/27644.

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This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 mum in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8mum), cavity lengths (555 to 2200mum) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.

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Cypranowski, Corinne. "Power recovery of radiation-damaged gallium arsenide and indium phosphide solar cells." Thesis, Monterey, California. Naval Postgraduate School, 1989. http://hdl.handle.net/10945/27215.

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Bückle, Maximilian [Verfasser]. "Nanomechanical Systems Based on Tensile-Stressed Crystalline Indium Gallium Phosphide / Maximilian Bückle." Konstanz : KOPS Universität Konstanz, 2020. http://d-nb.info/1225683874/34.

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Boehme, Christopher M. "MBE growth of an Electronic-Photonic Integrated Circuit (EPIC) using the indium gallium aluminum arsenide/indium phosphide material system." Ann Arbor, Mich. : ProQuest, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1447229.

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Thesis (M.S. in Electrical Engineering)--S.M.U., 2007.
Title from PDF title page (viewed Nov. 19, 2009). Source: Masters Abstracts International, Volume: 46-03, page: 1646. Adviser: Gary Evans. Includes bibliographical references.

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Dissertations / Theses on the topic 'Indium Phosphide'

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