Books on the topic 'Indium Phosphide'

(Firm), Knovel, ed. Properties of indium phosphide. London: INSPEC, 1991.

service), INSPEC (Information, ed. Properties of indium phosphide. London: INSPEC, 1991.

K, Willardson Robert, and Beer Albert C, eds. Indium phosphide: Crystal growth and characterization. Boston, Mass: Academic Press, 1990.

Weinberg, Irving. Potential for use of Indium phosphide solar cells in the space radiation environment. [Cleveland, Ohio: National Aeronautics and Space Administration, Lewis Research Center, 1985.

Jain, Raj K. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1990.

Fāṭimī, Naṣr Allāh Sayf'pūr, 1909-, Korényi-Both András L. 1937-, and United States. National Aeronautics and Space Administration., eds. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

K, Swartz Clifford, Drevinsky P. J, and United States. National Aeronautics and Space Administration., eds. Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

Jain, Raj K. Effect of InAlAs window layer on efficiency of indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

Fāṭimī, Naṣr Allāh Sayf'pūr, 1909-, Korényi-Both András L. 1937-, and United States. National Aeronautics and Space Administration., eds. Sinterless contacts to shallow junction InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

Fāṭimī, Naṣr Allāh Sayf'pūr, 1909-, Korényi-Both András L. 1937-, and United States. National Aeronautics and Space Administration., eds. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

1918-, Weinberg Irving, Flood Dennis J, and United States. National Aeronautics and Space Administration., eds. Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells. [Washington, DC: National Aeronautics and Space Administration, 1993.

Jain, Raj K. Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells. [Washington, DC: National Aeronautics and Space Administration, 1993.

Fatemi, Navid S. The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof. [Washington, DC: National Aeronautics and Space Administration, 1992.

S, Fatemi Navid, and United States. National Aeronautics and Space Administration., eds. A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1991.

Fāṭimī, Naṣr Allāh Sayf'pūr, 1909-, Korényi-Both András L. 1937-, and United States. National Aeronautics and Space Administration., eds. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

1918-, Weinberg Irving, Flood Dennis J, and United States. National Aeronautics and Space Administration., eds. Advanced power systems for EOS. [Washington, DC]: National Aeronautics and Space Administration, 1991.

S, Fatemi Navid, Landis Geoffrey A, and United States. National Aeronautics and Space Administration., eds. Texturing of InP surfaces for device applications. [Washington, DC]: National Aeronautics and Space Administration, 1993.

K, Jain R. Status and future direction of InP solar cell research. [Washington, DC]: National Aeronautics and Space Administration, 1992.

1918-, Weinberg Irving, Flood Dennis J, and United States. National Aeronautics and Space Administration., eds. Advanced power systems for EOS. [Washington, DC]: National Aeronautics and Space Administration, 1991.

Avishay, Katz, ed. Indium phosphide and related materials: Processing, technology, and devices. Boston: Artech House, 1992.

Brinker, David J. Recent developments in indium phosphide space solar cell research. [Washington, DC]: National Aeronautics and Space Administration, 1987.

Avishay, Katz, ed. Indium phosphide and related materials: Processing, technology, and devices. Boston: Artech House, 1992.

Brinker, David J. Recent developments in indium phosphide space solar cell research. [Washington, DC]: National Aeronautics and Space Administration, 1987.

Leuthold, Jürg. Advanced indium-phosphide waveguide Mach-Zehnder interferometer all-optical switches and wavelength converters: Theory, design guidelines & experimental results. Konstanz: Hartung-Gorre, 1999.

International Conference on Indium Phosphide and Related Materials (8th 1996 Germany). Eighth International Conference on Indium Phosphide and Related Materials, April 21-25, 1996, Convention Center "Stadtgarten" Schwäbisch Gmünd, Germany. [New York, NY]: Institute of Electrical and Electronics Engineers, 1996.

Richard, Allan Gary. Coherent dynamics of excitons and continuum excitations in indium phosphide. Ottawa: National Library of Canada = Bibliothèque nationale du Canada, 1997.

Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley, 1992.

NATO Workshop on Materials Aspects of Indium Phosphide (3rd 1986 Harwichport, Mass.). Materials aspects of indium phosphide 1986: Proceedings of the third NATO Workshop on Materials Aspects of Indium Phosphide; Harwichport, MA, USA, 22-25 September 1986. Amsterdam: North-Holland, 1987.

Weinberg, Irving. Indium phosphide solar cells: Status and prospects for use in space. [Washington, DC]: National Aeronautics and Space Administration, 1986.

Jain, Raj K. Optimal design study of high efficiency indium phosphide space solar cells. [Cleveland, Ohio: Lewis Research Center, 1990.

Jain, Raj K. Optimal design study of high efficiency indium phosphide space solar cells. [Cleveland, Ohio: Lewis Research Center, 1990.

Cypranowski, Corinne. Power recovery of radiation-damaged gallium arsenide and indium phosphide solar cells. Monterey, Calif: Naval Postgraduate School, 1989.

An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits. Konstanz: Hartung-Gorre Verlag, 2005.

Japan Society of Aplied Physics. and Denshi Jōhō Tsūshin Gakkai (Japan), eds. Indium phosphide and related materials : 13th IPRM: Conference proceedings : 2001 International Conference on Indium Phosphide and Related Materials : 14-18 May, 2000, Nara New Public Hall, Nara, Japan. Piscataway, N.J: IEEE, 2001.

Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Konstanz: Hartung-Gorre, 2002.

Agger, J. R. The deposition of quantum-confined indium phosphide semiconductor within porous inorganic host materials. Manchester: UMIST, 1996.

B, Vaĭnberg I., and United States. National Aeronautics and Space Administration., eds. Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells. [Washington, D.C.]: National Aeronautics and Space Administration, 1987.

1946-, Wada O., and Hasegawa H. 1941-, eds. InP-based materials and devices: Physics and technology. New York: Wiley, 1999.

K, Jain R., and United States. National Aeronautics and Space Administration., eds. Lattice-mismatched In ́(point) ́́Al ́(point) ́́As window layers for indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

K, Jain R., and United States. National Aeronautics and Space Administration., eds. Lattice-mismatched In(point)Al(point)As window layers for indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

K, Jain R., and United States. National Aeronautics and Space Administration., eds. Lattice-mismatched In(point)Al(point)As window layers for indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

International Conference on Indium Phosphide and Related Materials (2nd 1990 Denver, Colo.). Second International Conference, Indium Phosphide and Related Materials: April 23-25, 1990, Radisson Hotel Denver, Denver, Colorado. New York, N.Y: The Institute of Electrical and Electronics Engineers, Inc., 1990.

Physical InP-based HBT models for ultimate digital circuit optimization. Konstanz: Hartung-Gorre, 2006.

Omar, Manasreh Mahmoud, ed. InP and related compounds: Materials, applications and devices. Amsterdam: Gordon and Breach Science, 2000.

Jalali, B. InP HBTs: Growth, processing, and applications. Edited by Pearton S. J. Boston: Artech House, 1995.

1935-, Jain R. K., and United States. National Aeronautics and Space Administration., eds. Lattice-mismatched In(□point)A□□l(□point)A□□s window layers for indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

International Conference on Indium Phosphide and Related Materials (14th 2002 Stockholm, Sweden). 14th Indium Phosphide and Related Materials Conference : IPRM: Conference proceedings : May 12-16, 2002, Stockholm, Sweden. Piscataway, N.J: IEEE, 2002.

Boyer, Lynn L. Power recovery of radiation damaged MOCVD grown indium phosphide on silicon solar cells through argon-ion laser annealing. Monterey, Calif: Naval Postgraduate School, 1996.

Bruening, Joseph A. Analysis of radiation damaged and annealed gallium arsenide and indium phosphide solar cells using deep level transient spectroscopy. Monterey, Calif: Naval Postgraduate School, 1993.

Huber, Alex. Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design. Konstanz: Hartung-Gorre, 2000.