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Relevant bibliographies by topics / Indium Phosphide

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Academic literature on the topic 'Indium Phosphide'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 March 2023

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Journal articles on the topic "Indium Phosphide"

1

Olschner, F., J. C. Lund, M. R. Squillante, and D. L. Kelly. "Indium phosphide particle detectors." IEEE Transactions on Nuclear Science 36, no. 1 (1989): 210–12. http://dx.doi.org/10.1109/23.34436.

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Ito, Kentaro, Tatsuo Nakazawa, and Kazutoshi Takamizawa. "Indium oxide/indium phosphide heterojunction solar cells." IEEJ Transactions on Industry Applications 108, no. 2 (1988): 117–22. http://dx.doi.org/10.1541/ieejias.108.117.

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Monteiro, Othon R., and James W. Evans. "Thermal Oxidation of Indium Phosphide." Journal of The Electrochemical Society 135, no. 9 (September 1, 1988): 2366–69. http://dx.doi.org/10.1149/1.2096272.

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Adamski, Joseph A., and Brian S. Ahern. "Rapid synthesis of indium phosphide." Review of Scientific Instruments 56, no. 5 (May 1985): 716–18. http://dx.doi.org/10.1063/1.1138212.

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SCAVENNEC, A. "TRENDS IN INDIUM PHOSPHIDE MICROELECTRONICS." Le Journal de Physique Colloques 49, no. C4 (September 1988): C4–115—C4–123. http://dx.doi.org/10.1051/jphyscol:1988424.

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Yonenaga, Ichiro, and Koji Sumino. "Dislocation velocity in indium phosphide." Applied Physics Letters 58, no. 1 (January 7, 1991): 48–50. http://dx.doi.org/10.1063/1.104439.

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Sandhu, Adarsh. "Monitoring eyes on Indium Phosphide." III-Vs Review 17, no. 5 (June 2004): 31–33. http://dx.doi.org/10.1016/s0961-1290(04)00559-9.

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Marsan, Didier. "InPact — the indium phosphide specialists." III-Vs Review 10, no. 5 (August 1997): 16–18. http://dx.doi.org/10.1016/s0961-1290(97)81281-1.

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Doughty, GF, S. Thoms, V. Law, and CDW Wilkinson. "Dry etching of indium phosphide." Vacuum 36, no. 11-12 (November 1986): 803–6. http://dx.doi.org/10.1016/0042-207x(86)90115-6.

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Braun, Ivo, Přemysl Klíma, Josef Stejskal, Čestmír Černý, Petr Voňka, and Robert Holub. "Equilibria in the transport epitaxial formation of indium phosphide and arsenide." Collection of Czechoslovak Chemical Communications 51, no. 6 (1986): 1213–21. http://dx.doi.org/10.1135/cccc19861213.

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From the data available in literature, equilibria were calculated of the reactions which come into consideration in the preparation of indium phosphide and indium arsenide. In the first case it was supposed that indium phosphide was formed as a pure solid substance, that indium might exist either as a pure liquid, or as a gas and that the remaining 16 components in the equilibrium mixture were in the ideal gaseous state. In the second case, the formation of pure solid indium arsenide and the existence of 18 other substances in the equilibrium mixture, also in the ideal gaseous state, were supposed. The results of these theoretical calculations for indium phosphide were compared with the experimental deposition temperatures and reasonable agreement has been found.

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Dissertations / Theses on the topic "Indium Phosphide"

1

Olsson, Fredrik. "Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration." Doctoral thesis, Stockholm : Laboratory of Semiconductor Materials, School of Information and Communication Technology, Royal Institute of Technology (KTH), 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4801.

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Boud, John Michael. "The electron mobility in indium phosphide." Thesis, University of Surrey, 1988. http://epubs.surrey.ac.uk/847279/.

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Hall effect and resistivity measurements have been carried out as a function of hydrostatic pressure and temperature on a number of samples of indium phosphide ranging from exceptionally pure to highly doped. In the case of pure and lightly doped InP an iterative solution of the Boltzmann Equation has been used successfully to describe the temperature and pressure dependence of mobility over the helium temperature range. Measurements on the highest mobility samples of InP ever grown suggest that the conduction band deformation potential is 6. 7eV. For the case of highly doped material it was found that a theory of scattering from a correlated distribution of impurities describes both the temperature and pressure dependence of mobility well. Pressure dependent mobility measurements on a sample having an impurity density close to the Mott transition suggest that the inclusion of impurity band conduction in the analysis is necessary even at nitrogen temperatures and above. Such an analysis is used successfully to describe the temperature and pressure dependence of both mobility and Hall carrier concentration.

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Chatterjee, Basab. "Hydrogen passivation of heteroepitaxial indium phosphide /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487947908403973.

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Naseem, S. "Fabrication and characterization of indium phosphide/indium tin oxide solar cells." Thesis, University of Newcastle Upon Tyne, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.355860.

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Grover, Rohit. "Indium phosphide based optical micro-ring resonators." College Park, Md. : University of Maryland, 2003. http://hdl.handle.net/1903/261.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2003.
Thesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Blight, Kyle Raymond. "The electronic structure of indium phosphide surfaces." Thesis, Blight, Kyle Raymond (1993) The electronic structure of indium phosphide surfaces. PhD thesis, Murdoch University, 1993. https://researchrepository.murdoch.edu.au/id/eprint/51642/.

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Indium phosphide (InP) is a member of a group of compounds known as III-V semiconductors. InP's direct band gap and high carrier mobility, approximately twice that of Si, makes it the ideal candidate for the manufacture of electronic devices such as field effect transistors. However, the wide spread use of InP has been restricted by the lack of a suitable compound or native oxide that could be used to form a passivating film on the surface. To date such films have been shown to contain defects within the film or at the overlayer-substrate interface. These defects trap the charge carriers and inhibit the device performance. The trapping states are also known to be formed by the deposition of metals. The main objective of the work described in this thesis was to monitor the change in the electronic structure of n and p-InP under a variety of conditions in order to elucidate the physicochemical origin of the extrinsic surface states. In addition, the properties of some inorganic and organic sulphur compounds were investigated for use as passivating agents with which to form an inert and insulating film on the surface. Some of these compounds were found to have potential for use in the construction of electronic devices. Electrochemical and ultra high vacuum techniques were utilised to monitor the electronic characteristics of the surfaces as a function of oxygen exposure. A simplex curve fitting algorithm was used to fit a model of the electronic structure of the surface to the surface photovoltage spectra. The results are expressed as surface potential curves. In addition to the states tailing into the band gap from the band edges, three midgap states were identified at approximately 0.25, 0.50 and 0.75 of the gap energy. The origin of these surface states was attributed to a disordered surface layer generated by the adsorption processes. A model of the origin and distribution of the surface states is discussed.

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Tsai, Cheng-Hung. "Photoluminescence of gallium phosphide and indium gallium phosphide doped with rare-earths." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1173207968.

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Demerdjiev, Penka. "Opto-electrical properties of indium gallium arsenic phosphide quaternary epilayers and multiple quantum wells lattice matched to indium phosphide." Thesis, University of Ottawa (Canada), 1995. http://hdl.handle.net/10393/9722.

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$In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}$ epilayers lattice matched to InP and $In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}/InP$ Multiple Quantum Wells (MQWs) grown by Chemical-Beam Epitaxy (CBE) are being studied systematically using the Photovoltaic (PV) effect. At first, the Schottky barriers on the interfaces (metal-semiconductor, metal-insulator-semiconductor) are determined as an important factor for the electrical and optical properties of the samples. Samples with identical Schottky contact deposition but with an insulating layer on the front surface, have shown much smaller leakage current and yield enhanced barrier heights. The photovoltaic signal in the temperature interval 4-300K has maximum amplitude at about 150-180K for the MQW samples and at about 190K for the epilayer. An applied electric field changes the integrated intensity and spectrally shifts the allowed and forbidden transitions observed in bias dependent PV spectra of various InGaAsP/InP MQWs. The combined effect of two external factors, the thermal ionization and the electric field on the shape and magnitude of the 11H exciton peak, are discussed in terms of exciton binding energy and field ionization. The optically induced changes and energy shifting of the 11H/ exciton peak are observed, when excitation dependent double beam experiments are conducted on the $In\sb{0.72}Ga\sb{0.28}As\sb{0.68}P\sb{0.32}/InP$ MQWs. The photomodulation of the internal fields through carrier transport results in observing effective nonlinearities at milliwatt power levels. The experimentally measured transition energies for the MQWs show good agreement with the envelope wave function calculations. The observed Schottky barrier heights and band gap energies are consistent with the interpolation scheme estimations. (Abstract shortened by UMI.)

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Hoffmann, Eric A. 1982. "The thermoelectric efficiency of quantum dots in indium arsenide/indium phosphide nanowires." Thesis, University of Oregon, 2009. http://hdl.handle.net/1794/10552.

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xi, 193 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.
State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be loaded with electrons, one-by-one, and subsequently unloaded using source and drain electrical contacts. As such, quantum dots are uniquely tunable platforms for performing quantum transport and quantum control experiments. Voltage-biased electron transport through quantum dots has been studied extensively. Far less attention has been given to thermoelectric effects in quantum dots, that is, electron transport induced by a temperature gradient. This dissertation focuses on the efficiency of direct thermal-to-electric energy conversion in InAs/InP quantum dots embedded in nanowires. The efficiency of thermoelectric heat engines is bounded by the same maximum efficiency as cyclic heat engines; namely, by Carnot efficiency. The efficiency of bulk thermoelectric materials suffers from their inability to transport charge carriers selectively based on energy. Owing to their three-dimensional momentum quantization, quantum dots operate as electron energy filters--a property which can be harnessed to minimize entropy production and therefore maximize efficiency. This research was motivated by the possibility to realize experimentally a thermodynamic heat engine operating with near-Carnot efficiency using the unique behavior of quantum dots. To this end, a microscopic heating scheme for the application of a temperature difference across a quantum dot was developed in conjunction with a novel quantum-dot thermometry technique used for quantifying the magnitude of the applied temperature difference. While pursuing high-efficiency thermoelectric performance, many mesoscopic thermoelectric effects were observed and studied, including Coulomb-blockade thermovoltage oscillations, thermoelectric power generation, and strong nonlinear behavior. In the end, a quantum-dot-based thermoelectric heat engine was achieved and demonstrated an electronic efficiency of up to 95% Carnot efficiency.
Committee in charge: Stephen Kevan, Chairperson, Physics; Heiner Linke, Member, Physics; Roger Haydock, Member, Physics; Stephen Hsu, Member, Physics; David Johnson, Outside Member, Chemistry

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趙有文 and Youwen Zhao. "Thermally induced native defects and conduction conversion in the N-type InP." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B3123978X.

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Books on the topic "Indium Phosphide"

1

(Firm), Knovel, ed. Properties of indium phosphide. London: INSPEC, 1991.

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service), INSPEC (Information, ed. Properties of indium phosphide. London: INSPEC, 1991.

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K, Willardson Robert, and Beer Albert C, eds. Indium phosphide: Crystal growth and characterization. Boston, Mass: Academic Press, 1990.

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Weinberg, Irving. Potential for use of Indium phosphide solar cells in the space radiation environment. [Cleveland, Ohio: National Aeronautics and Space Administration, Lewis Research Center, 1985.

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5

Jain, Raj K. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1990.

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Fāṭimī, Naṣr Allāh Sayf'pūr, 1909-, Korényi-Both András L. 1937-, and United States. National Aeronautics and Space Administration., eds. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

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K, Swartz Clifford, Drevinsky P. J, and United States. National Aeronautics and Space Administration., eds. Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

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Jain, Raj K. Effect of InAlAs window layer on efficiency of indium phosphide solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

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Fāṭimī, Naṣr Allāh Sayf'pūr, 1909-, Korényi-Both András L. 1937-, and United States. National Aeronautics and Space Administration., eds. Sinterless contacts to shallow junction InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

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Fāṭimī, Naṣr Allāh Sayf'pūr, 1909-, Korényi-Both András L. 1937-, and United States. National Aeronautics and Space Administration., eds. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1993.

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Book chapters on the topic "Indium Phosphide"

1

Linares, R. C., and R. M. Ware. "Indium Phosphide." In Inorganic Reactions and Methods, 205–6. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145227.ch149.

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Adachi, Sadao. "Indium Phosphide (InP)." In Optical Constants of Crystalline and Amorphous Semiconductors, 245–56. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_25.

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Feenstra, R. M., and S. W. Hla. "2.3.12 InP, Indium Phosphide." In Physics of Solid Surfaces, 60. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_29.

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Grant, Ian R. "Indium Phosphide Crystal Growth." In Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials, 121–47. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470012086.ch4.

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Adachi, Sadao. "a-Indium Phosphide (a-lnP)." In Optical Constants of Crystalline and Amorphous Semiconductors, 703–6. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_69.

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Yana, Suchikova. "Porous Indium Phosphide: Preparation and Properties." In Handbook of Nanoelectrochemistry, 1–19. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15207-3_28-1.

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Yana, Suchikova. "Porous Indium Phosphide: Preparation and Properties." In Handbook of Nanoelectrochemistry, 283–305. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15266-0_28.

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Fazio, E., and G. M. Gale. "Femtosecond Luminescence Spectroscopy of Indium Phosphide." In Ultrafast Phenomena VIII, 429–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84910-7_137.

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Tahalyani, Geeta, Raghvendra Sahai Saxena, and T. Vigneswaran. "High Performance Trench Gate Power MOSFET of Indium Phosphide." In Nanoelectronic Materials and Devices, 175–81. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-7191-1_16.

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Dubey, Shashank Kumar, and Aminul Islam. "Indium Phosphide Based Dual Gate High Electron Mobility Transistor." In Lecture Notes in Electrical Engineering, 255–64. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5089-8_24.

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Conference papers on the topic "Indium Phosphide"

1

Brandhorst, Henry W. "Indium Phosphide - Into The Future." In 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices, edited by Louis J. Messick and Rajendra Singh. SPIE, 1989. http://dx.doi.org/10.1117/12.961977.

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Sun, Niefeng, Luhong Mao, K. Sankaranarayanan, Xiaolong Zhou, Weilian Guo, Xiawan Wu, and Tongnian Sun. "Synthesis of indium phosphide polycrystalline." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734636.

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Smit, M. K., and K. A. Williams. "Indium Phosphide Photonic Integrated Circuits." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/ofc.2020.w3f.4.

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Coldren, Larry A. "Indium-Phosphide Photonic-Integrated-Circuits." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/ofc.2017.w4g.1.

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Rodwell, M. J. W., J. Rode, H. W. Chiang, P. Choudhary, T. Reed, E. Bloch, S. Danesgar, et al. "THz Indium Phosphide Bipolar Transistor Technology." In 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2012. http://dx.doi.org/10.1109/csics.2012.6340091.

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Pelouard, Jean-Luc, and Michael A. Littlejohn. "Indium Phosphide-Based Heterojunction Bipolar Transistors." In 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices, edited by Louis J. Messick and Rajendra Singh. SPIE, 1989. http://dx.doi.org/10.1117/12.962048.

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Junesand, C., W. Metaferia, F. Olsson, M. Avella, J. Jimenez, G. Pozina, L. Hultman, and S. Lourdudoss. "Hetero-epitaxial indium phosphide on silicon." In SPIE Photonics Europe, edited by Giancarlo C. Righini. SPIE, 2010. http://dx.doi.org/10.1117/12.858122.

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Greek, Staffan, Klas Hjort, Jan-Ake Schweitz, Christian Seassal, Jean Louis Leclercq, Michel Gendry, Marie-Paule Besland, et al. "Strength of indium-phosphide-based microstructures." In Photonics West '97, edited by M. Edward Motamedi, Larry J. Hornbeck, and Kristofer S. J. Pister. SPIE, 1997. http://dx.doi.org/10.1117/12.271420.

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Li, Dongguang. "Emission from cleaved indium phosphide (InP)." In International Conference on Smart Materials and Nanotechnology in Engineering. SPIE, 2007. http://dx.doi.org/10.1117/12.779339.

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Williams, K. A., V. Pogoretskiy, J. P. van Engelen, N. P. Kelly, J. J. G. M. van der Tol, and Y. Jiao. "Indium Phosphide Membrane Photonics on Silicon." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/ofc.2019.m2d.4.

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Reports on the topic "Indium Phosphide"

1

Arrathoon, R. Flowing Afterglow Deposition for Indium Phosphide Interfacial Studies. Fort Belvoir, VA: Defense Technical Information Center, January 1986. http://dx.doi.org/10.21236/ada226672.

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Nedoluha, A. K. Technology and Application of Indium Phosphide and Related Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada208251.

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Gregg, Michael, and Kenneth Vaccaro. Development of a Liquid Phase Epitaxial Growth System for Fabrication of Indium Phosphide Based Devices. Fort Belvoir, VA: Defense Technical Information Center, April 1991. http://dx.doi.org/10.21236/ada254570.

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Kuhn, W. K., and Margaret H. Rakowsky. Electron Paramagnetic Resonance and X-Ray Photoelectron Spectroscopy Investigations of Fe Doped and H+ Implanted Indium Phosphide,. Fort Belvoir, VA: Defense Technical Information Center, September 1995. http://dx.doi.org/10.21236/ada298711.

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