Journal articles: 'INDIUM EVAPORATION'

1

Yao, J. L., S. Hao, and J. S. Wilkinson. "Indium tin oxide films by sequential evaporation." Thin Solid Films 189, no. 2 (August 1990): 227–33. http://dx.doi.org/10.1016/0040-6090(90)90451-i.

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Kozhemyakin, G. N., S. A. Kiiko, and O. E. Bryl. "Formation of Indium Nanoparticles by Thermal Evaporation." Crystallography Reports 64, no. 3 (May 2019): 457–60. http://dx.doi.org/10.1134/s1063774519030167.

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3

RAO, K. NARASIMHA, and SANJAY KASHYAP. "PREPARATION AND CHARACTERIZATION OF INDIUM OXIDE AND INDIUM TIN OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION." Surface Review and Letters 13, no. 02n03 (April 2006): 221–25. http://dx.doi.org/10.1142/s0218625x06008128.

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Transparent and conducting oxide films find many applications because of their excellent properties such as high optical transparency, low surface resistance, high infrared reflectance, etc. Realization of these properties depend upon the choice of the deposition technique and the control of deposition parameters. In this paper, we report the preparation of highly transparent and conducting films of indium oxide ( In 2 O 3) and indium tin oxide (ITO) by activated reactive evaporation on glass substrates. These films were deposited by evaporating pure indium and 90% In + 10% Sn alloy using an electron gun in the presence of oxygen ions at ambient temperature. Films of different thickness have been prepared and their optical, electrical and structural properties are studied. In 2 O 3 films showed higher transparency (90%) compared to ITO films (85%) but the electrical resistivity was observed to be little higher (2.5 × 10-3 Ω cm) compared to ITO films (6 × 10-4 Ωcm). Hall measurements on aged ITO films gave the charge density of 3 × 1020 per cm3 and mobility 35.6 cm2/V-s. The refractive index and extinction coefficient were found to be around 2.0 and 0.005 for ITO films and 2.10 and 0.001 for In 2 O 3 films at 550 nm respectively. ITO and In 2 O 3 films were amorphous in nature for lesser thickness, but for thicker films, the partial crystallinity was observed.

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Zhang, Lulu, Jun Xing, Xinglin Wen, Jianwei Chai, Shijie Wang, and Qihua Xiong. "Plasmonic heating from indium nanoparticles on a floating microporous membrane for enhanced solar seawater desalination." Nanoscale 9, no. 35 (2017): 12843–49. http://dx.doi.org/10.1039/c7nr05149b.

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A portable paper-like plasmonic device consisting of a microporous membrane and indium nanoparticles (In NP/MPM) is fabricated through a simple thermal evaporation method, which can effectively enhance solar water evaporation by floating on the water surface.

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Gao, Hong, Hong Ji, Xitian Zhang, Huiqing Lu, and Yao Liang. "Indium-doped ZnO nanospirals synthesized by thermal evaporation." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, no. 2 (2008): 585. http://dx.doi.org/10.1116/1.2889418.

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6

Gaur, Shailendra Kumar, and R. S. Mishra. "Thermal Evaporation- Modeling and Microstructure Studies of Indium and Tin Deposition." International Journal of Advance Research and Innovation 3, no. 1 (2015): 301–11. http://dx.doi.org/10.51976/ijari.311548.

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The present work represents the modeling of nano scale tin indium films by computing the film thickness, mass deposited on the substrate and mass transfer rate with time dependent model using BDF solver. Tin and indium is evaporated from a resistively heated evaporator source at a temperature of 1855 K and 1485 K respectively in a pressure (vacuum) of 100 Pa onto silicon surface held on a fixed surface. The film thickness varies between 144 nm to 164 nm for Tin and 164 nm to 183 nm for Indium across the sample after 60 sec of deposition, with radial symmetry about the midpoint of the source. The film thickness as well as mass deposited at a point increases linearly with time. Since the angular distribution is of particular interest in this model, by increasing the integration resolution to a maximum value for ensuring the most accurate angular resolution when computing the flux. The surface temperature is required to specifying the temperature of the evaporating tin and indium source using constant elements for turn off the refinement in the post-processing settings. The SEM micrographs of tin and indium at different magnifications shows the 100nm to 1microns grain size along the grain boundaries. Similarly, XRD analysis with Kα (wavelength 1.541874) shows the peaks of intensity at different 2θ angles for different orientations of planes with polycrystalline structure.

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7

Yudasaka, M., T. Matsuoka, and K. Nakanishi. "Indium selenide film formation by the double-source evaporation of indium and selenium." Thin Solid Films 146, no. 1 (January 1987): 65–73. http://dx.doi.org/10.1016/0040-6090(87)90340-3.

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8

Audas, R. D., and D. E. Brodie. "a-Si:N:H prepared by reactive evaporation in ammonia vapour." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 1020–22. http://dx.doi.org/10.1139/p87-165.

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The reactive evaporation of Si in an ammonia ambient has been used to produce a-Si:N:H thin films. These films are "intrinsic-like" with low room-temperature conductivities (<10−12 S∙cm−1), high activation energies (0.9 eV), and high optical bandgaps (1.9 eV). Films prepared in this manner have been doped using co-evaporation of antimony (n type) and indium (p type). The addition of 2 at.% indium or antimony results in an increase in the room-temperature conductivity by eight and six orders of magnitude respectively. The undoped and doped samples are photoconductive when illuminated with a quartz-halogen source.

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9

Pruna, Raquel, Manel López, and Francesc Teixidor. "Tuning the deposition parameters for optimizing the faradaic and non-faradaic electrochemical performance of nanowire array-shaped ITO electrodes prepared by electron beam evaporation." Nanoscale 11, no. 1 (2019): 276–84. http://dx.doi.org/10.1039/c8nr07908k.

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10

Kalkan, N. "Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films." High Temperature Materials and Processes 35, no. 9 (October 1, 2016): 949–54. http://dx.doi.org/10.1515/htmp-2015-0055.

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AbstractCurrent–voltage characteristics of indium-embedded indium oxide thin films (600–850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I–V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

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11

Chen, Zhi, Kaiyu Yang, and Jianqqu Wang. "Preparation of indium tin oxide films by vacuum evaporation." Thin Solid Films 162 (August 1988): 305–13. http://dx.doi.org/10.1016/0040-6090(88)90219-2.

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12

Spirina, Anna A., Igor Neizvestny, and Nataliya L. Shwartz. "Comparative Characteristics of GaAs and InAs Langmuir Evaporation - Monte Carlo Simulation." Defect and Diffusion Forum 386 (September 2018): 27–32. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.27.

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The process of GaAs and InAs substrates high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The temperature range of gallium arsenide and indium arsenide congruent and incongruent evaporation are determined. It was demonstrated that the congruent evaporation temperature Tc is sensitive to the vicinal surface terrace width. The decrease of the terrace width results in a decrease in the congruent evaporation temperature. The Ga and In diffusion lengths along the (111)A and (111)B surfaces at congruent temperatures are estimated. The surface morphology transformation kinetic during high-temperature annealing is analyzed.

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13

Ganesh, Vattikondala, Mahdi Alizadeh, Ahamad Shuhaimi, Alagarsamy Pandikumar, Boon Tong Goh, Nay Ming Huang, and Saadah Abdul Rahman. "Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation." RSC Advances 5, no. 22 (2015): 17325–35. http://dx.doi.org/10.1039/c4ra16258g.

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14

Winter, R., K. Scharnagl, A. Fuchs, T. Doll, and I. Eisele. "Molecular beam evaporation-grown indium oxide and indium aluminium films for low-temperature gas sensors." Sensors and Actuators B: Chemical 66, no. 1-3 (July 2000): 85–87. http://dx.doi.org/10.1016/s0925-4005(99)00298-1.

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15

MEHER, S. R., KUYYADI P. BIJU, and MAHAVEER K. JAIN. "GROWTH OF INDIUM-RICH NANOCRYSTALLINE INDIUM GALLIUM NITRIDE THIN FILMS BY MODIFIED ACTIVATED REACTIVE EVAPORATION." International Journal of Nanoscience 10, no. 01n02 (February 2011): 141–45. http://dx.doi.org/10.1142/s0219581x11007612.

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Indium-rich In x Ga 1-x N thin films were prepared on glass substrates by a mixed source modified activated reactive evaporation technique. All the films exhibit hexagonal wurtzite structure preferentially oriented along the c-axis. The band gap values obtained through Urbach fitting of the absorption edge were found to be in good agreement with the values obtained from photoluminescence spectra. The decrease in band gap below 1.9 eV (i.e., for pure InN ) for indium-rich films is mainly due to the compensation of Burstein–Moss shift due to gallium incorporation into the lattice which is further confirmed from the carrier concentration measurements.

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16

Rojanasuwan, Sunit, Pakorn Prajuabwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "Evidence of Phase Transition of Indium Doped Zinc Phthalocyanine." Applied Mechanics and Materials 313-314 (March 2013): 121–25. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.121.

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A new intercalation of Indium and Zinc Phthalocyanine(ZnPc) thin films is developed by using thermal co-evaporation method. Optical characteristics of In-doped ZnPc are studied in comparison with pristine ZnPc, which shows improvement on optical absorption at the visible spectrum. The presence of a new phase transition upon Indium doping is examined and consequently support the idea of the intercalated phase upon doping. A Schottky diode made of Indium doped ZnPc is fabricated in order to measure its electrical properties, its photo-current spectrum confirms the existence of phase transition.

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17

Kosaraju, Sreenivas, Joseph A. Marino, John A. Harvey, and Colin A. Wolden. "Plasma-assisted co-evaporation of β-indium sulfide thin films." Solar Energy Materials and Solar Cells 90, no. 7-8 (May 2006): 1121–35. http://dx.doi.org/10.1016/j.solmat.2005.06.007.

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18

Gupta, Arjeesh, Poonam Gupta, and V. K. Srivastava. "Annealing effects in indium oxide films prepared by reactive evaporation." Thin Solid Films 123, no. 4 (January 1985): 325–31. http://dx.doi.org/10.1016/0040-6090(85)90007-0.

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19

Salman, Odai N. "The antibacterial activity of indium oxide thin film prepared by thermal deposition." Iraqi Journal of Physics (IJP) 16, no. 37 (September 11, 2018): 46–51. http://dx.doi.org/10.30723/ijp.v16i37.75.

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Indium oxide In2O3 thin films fabricated using thermal evaporation of indium metal in vacuum on a glass substrate at 25oC using array mask, after deposition the indium films have been subjected to thermal oxidation at temperature 400 °C for 1h. The results of prepared Indium oxide reveal the oxidation method as a strong effect on the morphology and optical properties of the samples as fabricated. The band gap (Eg) of In2O3 films at 400 °C is 2.7 eV. Then, SEM and XRD measurements are also used to investigate the morphology and structure of the indium oxide In2O3 thin films. The antimicrobial activity of indium oxide In2O3 thin films was assessed against gram-negative bacterium using inhibition zone of bacteria which improved higher inactivation rate observed for gram-negative bacteria and reduced resistance of membrane due to reactive oxygen species generated by thermal oxidation.

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20

HEILMANN, A., A. D. MÜLLER, and J. WERNER. "SIZE AND SHAPE MANIPULATION OF SILVER AND INDIUM SMALL PARTICLES BY ELECTRON-BEAM IRRADIATION." Surface Review and Letters 03, no. 01 (February 1996): 1113–19. http://dx.doi.org/10.1142/s0218625x96001996.

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Small particles of indium or silver were encapsulated in a thin polymer film matrix by simultaneous plasma polymerization and metal evaporation. Electron-beam irradiation inside transmission electron microscopes and with a microfocus electron source was used to induce changes of the encapsulated particle size and shape. At encapsulated indium particles, substantial microstructural changes were observed during the electron-beam irradiation in the electron microscope. Selected area diffraction demonstrates that indium oxide was formed during the electron irradiation. Additional in situ annealing demonstrates that the indium melting point was not reached during electron-beam-induced local heating of the indium particles. At electron-beam irradiation of plasma polymer films with encapsulated silver particles by using a microfocus electron source, the coalescence of the silver particles can be limited to the irradiated areas of the films.

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21

Jaruvanawat, Anuchit, Pakorn Prajuabwan, Sunit Rojanasuwan, Annop Chanhom, Adirek Rangkasikorn, and Jiti Nukeaw. "Hole Doping Through Indium Intercalation into Copper Phthalocyanine." Advanced Materials Research 802 (September 2013): 273–78. http://dx.doi.org/10.4028/www.scientific.net/amr.802.273.

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A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material.

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22

Harris, Daniel, Robert Dean, Ashish Palkar, Mike Palmer, Charles Ellis, and Gary Wonacott. "Low-Temperature Indium Bonding for MEMS Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 002543–66. http://dx.doi.org/10.4071/2012dpc-tha34.

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Low–temperature bonding techniques are of great importance in fabricating MEMS devices, and especially for sealing microfluidic MEMS devices that require encapsulation of a liquid. Although fusion, thermocompression, anodic and eutectic bonding have been successfully used in fabricating MEMS devices, they require temperatures higher than the boiling point of commonly used fluids in MEMS devices such as water, alcohols and ammonia. Although adhesives and glues have been successfully used in this application, they may contaminate the fluid in the MEMS device or the fluid may prevent suitable bonding. Indium (In) possesses the unusual property of being cold weldable. At room temperature, two sufficiently clean In surfaces can be cold welded by bringing them into contact with sufficient force. The bonding technique developed here consists of coating and patterning one Si wafer with 500A Ti, 300A Ni and 1 μm In through electron beam evaporation. A second wafer is metallized and patterned with a 500A Ti and 1 μm Cu by electron beam evaporation and then electroplated with 10 μm of In. Before the In coated sections are brought into contact, the In surfaces are chemically cleaned to remove indium-oxide. Then the sections are brought into contact and held under sufficient pressure to cold weld the sections together. Using this technique, MEMS water-filled and mercury-filled microheatpipes were successfully fabricated and tested. Additionally, this microfabrication technique is useful for fabricating other types of MEMS devices that are limited to low-temperature microfabrication processes.

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23

Kozłowski, Paweł, Krzysztof Czuba, Krzysztof Chmielewski, Jacek Ratajczak, Joanna Branas, Adam Korczyc, Kazimierz Regiński, and Agata Jasik. "Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing." Materials 14, no. 21 (October 21, 2021): 6269. http://dx.doi.org/10.3390/ma14216269.

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Indium-based micro-bump arrays, among other things, are used for the bonding of infrared photodetectors and focal plane arrays. In this paper, several aspects of the fabrication technology of micrometer-sized indium bumps with a smooth surface morphology were investigated. The thermal evaporation of indium has been optimized to achieve ~8 μm-thick layers with a small surface roughness of Ra = 11 nm, indicating a high packing density of atoms. This ensures bump uniformity across the sample, as well as prevents oxidation inside the In columns prior to the reflow. A series of experiments to optimize indium bump fabrication technology, including a shear test of single columns, is described. A reliable, repeatable, simple, and quick approach was developed with the pre-etching of indium columns in a 10% HCl solution preceded by annealing at 120 °C in N2.

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24

Noaman, Sura Ali, Rashid Owaid Kadhim, and Saleem Azara Hussain. "Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique." JOURNAL OF ADVANCES IN PHYSICS 12, no. 3 (October 30, 2016): 4394–99. http://dx.doi.org/10.24297/jap.v12i3.45.

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Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and SiliconÂ substratesÂ byÂ thermal evaporation technique.Â X-ray diffraction pattern of Â pure SnO2 and SnO2:In thin films annealed at 650oC and the results showedÂ that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pureÂ SnO2 and Â Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.Â Optical properties such asÂ Transmission , optical band-gap have been measured and calculated.

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25

Prajuabwan, Pakorn, Sunit Rojanasuwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "Exciton Dissociation at Indium Tin Oxide/Indium Doped Zinc Phthalocyanine Interface." Applied Mechanics and Materials 313-314 (March 2013): 140–47. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.140.

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A new intercalation of Indium and zinc phthalocyanine(ZnPc) thin film is developed by using thermal co-evaporation technique. The exciton dissociation at the interface of Indium Tin Oxide(ITO) electrode and Indium doped ZnPc upon laser irradiation is observed through the transient photovoltage measurement technique in comparison with the interfacial exciton dissociation occurred at ITO/pristine ZnPc interface. The occurring transient photovoltage spike is regarded as the effect of exciton dissociation at ITO/In-doped ZnPc interface and depends on the amount of free carrier separation by built-in field or charge carrier concentration according to doping ratio. The experiments demonstrate the existence of exciton dissociation at ITO/In-doped ZnPc interface, the direction of charges transfer is that holes are injected to ITO, whereas electrons are left in bulk film. A thin insulating layer of 6 nm thick lithium fluoride(LiF) is inserted between ITO and In-doped ZnPc to prevent the exciton dissociation at ITO/In-doped ZnPc interface and insist on the phenomenon of interfacial exciton dissociation. Further photoelectron spectroscopy experiments prove that In-doped ZnPc is hole transport material.

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Prajuabwan, Pakorn, Sunit Rojanasuwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "Hole Doping Through Indium Intercalation Into Nickel Phthalocyanine." Applied Mechanics and Materials 313-314 (March 2013): 148–56. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.148.

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A new intercalation of indium and nickel phthalocyanine(NiPc) thin films is developed by using thermal co-evaporation technique. X-ray diffractometer(XRD) and optical absorption spectroscopy of In-doped NiPc suggest the crystal structure of In-doped NiPc is α-phase as same as that of pristine NiPc. Current-voltage characteristic of Shottky diode fabricated with In-doped NiPc thin film shows the enhancement of charge carrier concentration due to indium doping. Further photoelectron spectroscopy experiments prove that In-doped NiPc is hole transport material.

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27

Geretovszky, Zs, K. Deppert, L. S. Karlsson, M. N. A. Karlsson, J. O. Malm, and M. Mühlberg. "Aerosol Phase Generation of Indium–Selenide Nanoparticles." Journal of Nanoscience and Nanotechnology 6, no. 3 (March 1, 2006): 600–611. http://dx.doi.org/10.1166/jnn.2006.084.

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Results on the generation and heat treatment of In–Se nanoparticles, made by heterogeneous condensation of selenium on indium nanoparticles synthesised via the evaporation/condensation route are reported. In-situ aerosol measurements are complemented with ex-situ analysis, to provide structural, morphological, and compositional information on the In–Se nanoparticles. Our results indicate that prior to heat treatment In–Se nanoparticles have a shape in the aerosol phase, similar to an asymmetric dumbbell. The bigger particle of the dumbbell structure is made up of amorphous Se, while the overall composition of the polycrystalline smaller particle is around InSe. The smaller particle has an intrinsic structure, and consists of different InSe-compounds, with a decreasing In content towards the shell. The shape of the In–Se nanoparticles is different in the aerosol phase and on the surface of the samples. The observed variety of particle sizes and shapes on the sample surface is shown to be partly due to the agglomeration of the aerosol phase binaries (i.e., dumbbells) via coalescence on the surface of the sample and wetting of the sample surface by the Se nanoparticles. These processes make the bigger particle of the dumbbell structure appear almost perfectly hemispherical on the sample surfaces. During heat treatment at lower temperatures mainly the evaporative removal of the big Se particle of the dumbbell structure will take place. Annealing of the smaller particles starts to dominate at temperatures above 240 °C and makes the composition of the small particles closer to that of the thermodynamically most favoured In2Se3.

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28

Flerus, Benedikt, Thomas Swiontek, Katrin Bokelmann, Rudolf Stauber, and Bernd Friedrich. "Thermochemical Modelling and Experimental Validation of In Situ Indium Volatilization by Released Halides during Pyrolysis of Smartphone Displays." Metals 8, no. 12 (December 8, 2018): 1040. http://dx.doi.org/10.3390/met8121040.

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The present study focuses on the pyrolysis of discarded smartphone displays in order to investigate if a halogenation and volatilization of indium is possible without a supplementary halogenation agent. After the conduction of several pyrolysis experiments it was found that the indium evaporation is highly temperature-dependent. At temperatures of 750 °C or higher the indium concentration in the pyrolysis residue was pushed below the detection limit of 20 ppm, which proved that a complete indium volatilization by using only the halides originating from the plastic fraction of the displays is possible. A continuous analysis of the pyrolysis gas via FTIR showed that the amounts of HBr, HCl and CO increase strongly at elevated temperatures. The subsequent thermodynamic consideration by means of FactSage confirmed the synergetic effect of CO on the halogenation of indium oxide. Furthermore, HBr is predicted to be a stronger halogenation agent compared to HCl.

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29

Castañeda, S. I., F. Rueda, R. Dı́az, J. M. Ripalda, and I. Montero. "Whiskers in indium tin oxide films obtained by electron beam evaporation." Journal of Applied Physics 83, no. 4 (February 15, 1998): 1995–2002. http://dx.doi.org/10.1063/1.366928.

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30

Kaito, C., A. Ito, S. Kimura, Y. Kimura, Y. Saito, and T. Nakada. "Topotactical growth of indium sulfide by evaporation of metal onto molybdenite." Journal of Crystal Growth 218, no. 2-4 (September 2000): 259–64. http://dx.doi.org/10.1016/s0022-0248(00)00575-3.

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31

Patil, Sheetal J., Dhananjay S. Bodas, A. B. Mandale, and S. A. Gangal. "Characterization of indium nitride films deposited by activated reactive evaporation process." Thin Solid Films 444, no. 1-2 (November 2003): 52–57. http://dx.doi.org/10.1016/s0040-6090(03)01097-6.

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32

Gayen, R. N., S. N. Das, S. Dalui, R. Paul, R. Bhar, and A. K. Pal. "Indium phosphide films prepared by flash evaporation technique: Synthesis and characterization." Thin Solid Films 518, no. 14 (May 2010): 3595–603. http://dx.doi.org/10.1016/j.tsf.2009.08.054.

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33

Kumar, R. Rakesh, K. Narasimha Rao, and A. R. Phani. "Growth of silicon nanowires by electron beam evaporation using indium catalyst." Materials Letters 66, no. 1 (January 2012): 110–12. http://dx.doi.org/10.1016/j.matlet.2011.08.064.

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34

Belo, G. S., B. J. P. da Silva, E. A. de Vasconcelos, W. M. de Azevedo, and E. F. da Silva. "A simplified reactive thermal evaporation method for indium tin oxide electrodes." Applied Surface Science 255, no. 3 (November 2008): 755–57. http://dx.doi.org/10.1016/j.apsusc.2008.07.020.

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Thomas, B., and T. R. N. Kutty. "Formation of Single-Phase Indium Selenide Thin Films by Elemental Evaporation." physica status solidi (a) 119, no. 1 (May 16, 1990): 127–38. http://dx.doi.org/10.1002/pssa.2211190115.

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36

Jan, Sea‐Way, and Si‐Chen Lee. "Preparation and Characterization of Indium‐Tin‐Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin." Journal of The Electrochemical Society 134, no. 8 (August 1, 1987): 2056–61. http://dx.doi.org/10.1149/1.2100819.

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37

Kayunkid, Navaphun, Annop Chanhom, Chaloempol Saributr, Adirek Rangkasikorn, and Jiti Nukeaw. "Growth and Characterizations of Indium-Doped Pentacene Thinfilm Prepared by Thermal Co-Evaporation as a Novel Nanomaterial." Advanced Materials Research 1131 (December 2015): 35–38. http://dx.doi.org/10.4028/www.scientific.net/amr.1131.35.

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This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.

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Zimin, S. P., A. S. Pipkova, L. A. Mazaletskiy, I. I. Amirov, E. S. Gorlachev, S. V. Vasilev, V. V. Khoroshko, V. F. Gremenok, and A. N. Pyatlitski. "Formation of Metallic Droplets on the Surface of Indium Sulfide Films During Argon Plasma Treatment." International Journal of Nanoscience 18, no. 03n04 (June 2019): 1940066. http://dx.doi.org/10.1142/s0219581x19400660.

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Modification of indium sulfide (In2S3) film surface was performed by the treatment in high-density low-pressure inductively coupled argon plasma. The films with thickness of 500–800[Formula: see text]nm were fabricated on glass substrates by the thermal evaporation method and subsequent annealing in sulfur ambience. The plasma treatment of as-grown and annealed films was carried out with argon ions having the energy of 25–200[Formula: see text]eV. Nanostructuring of the film surface took place resulting in the formation of arrays of nanosized indium droplets.

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39

Anwar, P. Mohamed, S. Muruganantham, M. Ismail Fathima, A. Ayeshamariam, S. Beer Mohamed, M. Benhaliliba, and K. Kaviyarasu. "Photoelectrochemical Efficiency Applications of Antimony-doped Tin Oxide Thin Film by Thermal Evaporation Technique." Asian Journal of Chemistry 34, no. 6 (2022): 1537–42. http://dx.doi.org/10.14233/ajchem.2022.23713.

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Antimony-doped tin oxide (ATO) Sb–SnO2 has been prepared by thermal evaporation technique on indium tin oxide (ITO) glass substrate. The prepared ATO thin film was characterized by X-ray diffraction technique (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDAX), UV-vis’s spectrometer, Fourier transform infrared spectroscopy (FTIR) and photoluminescence studies (PLS) at room temperature, 250 and 500 ºC. Furthermore, the as-fabricated ATO/indium tin oxide device was subjected to electrical measurements, was determined at room temperature and 500 ºC without etching, chemical etching and photoetching processes. Post-treatment, such as annealing and etching, electrochemical photocurrent results showed that the maximum photoelectrochemical performance without etching at 500 ºC of the PEC cell.

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40

HUANG, J. Y., G. H. FAN, T. MEI, S. W. ZHENG, Q. L. NIU, S. T. LI, and Y. ZHANG. "PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE Ta-DOPED ITO FILMS BY ELECTRON-BEAM EVAPORATION." Modern Physics Letters B 24, no. 32 (December 30, 2010): 3089–95. http://dx.doi.org/10.1142/s0217984910025371.

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Tantalum-doped indium tin oxide ( Ta -doped ITO) transparent conductive films are deposited on glass substrates by electron-beam evaporation. The effects of different Ta concentrations and annealing temperatures on the structural, morphologic, electrical, and optical properties of Ta -doped ITO films are investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic bixbyite structure of indium oxide and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 1.54×10-4 Ω ·cm is obtained from the ITO film containing 0.2 wt% tantalum annealed at 500°C and the average optical transmittance is over 95% from 425 nm to 460 nm.

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41

Ali, Cheknane, Abdelwahab Hamdi, and Hikmat S. Hilal. "Effect of feeding flow rate on characteristics of CuInSe2 films prepared by flash evaporation." Metallurgical and Materials Engineering 28, no. 4 (December 31, 2022): 577–91. http://dx.doi.org/10.56801/mme867.

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Copper indium selenide CuInSe2 (CISe) is one of the most promising absorber materials in high efficiency heterojunction thin-film solar cells due to its high conversion efficiency and known high stability. This paper describes a simple method for preparing CuInSe2 films from pre-prepared CuInSe2 ingot powder using a flash evaporation method. The primary goal of this work is to investigate the effect of feeding flow rate on CuInSe2 film characteristics. The powder feeding flow rate into the evaporator has been adjusted to control the film growth rate. Structure, composition, morphology, electrical and optical properties have all been studied for films deposited at different feeding flow rates. The results show that varying the feeding flow rate affects film characteristics, and that lower feeding rates yield films with better characteristics, which should be considered in future semiconductor film processing.

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42

Vygranenko, Yuri, Miguel Fernandes, Manuela Vieira, Guilherme Lavareda, Carlos Nunes de Carvalho, Pedro Brogueira, and Ana Amaral. "Photoconductivity kinetics of indium sulfofluoride thin films." European Physical Journal Applied Physics 89, no. 1 (January 2020): 10302. http://dx.doi.org/10.1051/epjap/2020190265.

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Indium sulfofluoride is an amorphous wide-gap semiconductor exhibiting high sensitivity to UV radiation. This work reports on the kinetics of photoconductivity in indium sulfofluoride thin films along with their electrical and optical properties. The films were deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The film characterization includes electrical, optical, and photoconductivity measurements. The films are highly transparent in the visible-infrared range due to an indirect bandgap of 2.8 eV. The spectral response measurements have revealed existence of the band tail states. The synthesized compound is highly resistive (∼200 MΩ-cm at 300 K) and exhibits extremely slow photocurrent relaxations. Photoconductivity kinetics was studied under various excitation conditions. A dependence of the photocurrent on the incident photon flux was also determined.

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43

Amirhoseiny, Maryam, Hassan Zainuriah, and Ng Shashiong. "A Simple Method to Prepare Indium Oxide Nanoparticles on Si (110)." Advanced Materials Research 620 (December 2012): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.620.193.

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Nanocrystalline indium oxide (In2O3) thin film was synthesized by thermal evaporation of indium on unheated Si (110) substrates, followed by wet oxidation process. XRD analyses showed the deposited In2O3 film is of high quality and have cubic structure. The Scherrer structural analysis revealed that the In2O3film grown on Si (110) orientation has nanocrystalline structure with crystallite size of 2.53 nm. Photoluminescence (PL) spectrum showed a strong and broad emission at 574.9 nm with two shoulders at 547 nm and 604 nm which related to oxygen vacancies. Finally, the band gap of nanocrystalline In2O3as determined from the PL spectrum was 2.15± 0.15eV.

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44

Rao, Pritty, Sanjiv Kumar, and N. K. Sahoo. "Growth of copper indium sulphide films by thermal evaporation of mixtures of copper sulphide and indium sulphide powders." Materials Research Bulletin 48, no. 8 (August 2013): 2915–21. http://dx.doi.org/10.1016/j.materresbull.2013.04.039.

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Zhang, Hao-Tian, Rong He, Lei Peng, Yu-Ting Yang, Xiao-Jie Sun, Yu-Shan Zhang, Yu-Xiang Zheng, et al. "Interpretation of Reflection and Colorimetry Characteristics of Indium-Particle Films by Means of Ellipsometric Modeling." Nanomaterials 13, no. 3 (January 18, 2023): 383. http://dx.doi.org/10.3390/nano13030383.

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It is of great technological importance in the field of plasmonic color generation to establish and understand the relationship between optical responses and the reflectance of metallic nanoparticles. Previously, a series of indium nanoparticle ensembles were fabricated using electron beam evaporation and inspected using spectroscopic ellipsometry (SE). The multi-oscillator Lorentz–Drude model demonstrated the optical responses of indium nanoparticles with different sizes and size distributions. The reflectance spectra and colorimetry characteristics of indium nanoparticles with unimodal and bimodal size distributions were interpreted based on the SE analysis. The trends of reflectance spectra were explained by the transfer matrix method. The effects of optical constants n and k of indium on the reflectance were demonstrated by mapping the reflectance contour lines on the n-k plane. Using oscillator decomposition, the influence of different electron behaviors in various indium structures on the reflectance spectra was revealed intuitively. The contribution of each oscillator on the colorimetry characteristics, including hue, lightness and saturation, were determined and discussed from the reflectance spectral analysis.

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Barreau, N., A. Mokrani, F. Couzinié-Devy, and J. Kessler. "Bandgap properties of the indium sulfide thin-films grown by co-evaporation." Thin Solid Films 517, no. 7 (February 2009): 2316–19. http://dx.doi.org/10.1016/j.tsf.2008.11.001.

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Gayen, R. N., S. Hussain, R. Bhar, and A. K. Pal. "Synthesis and characterization of indium phosphide films prepared by co-evaporation technique." Vacuum 86, no. 9 (March 2012): 1240–47. http://dx.doi.org/10.1016/j.vacuum.2011.11.005.

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Yamaguchi, Mika, Ari Ide-Ektessabi, Hiroshi Nomura, and Nobuto Yasui. "Characteristics of indium tin oxide thin films prepared using electron beam evaporation." Thin Solid Films 447-448 (January 2004): 115–18. http://dx.doi.org/10.1016/j.tsf.2003.09.033.

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Ito, K., T. Nakazawa, and K. Osaki. "Amorphous-to-crystalline transition of indium oxide films deposited by reactive evaporation." Thin Solid Films 151, no. 2 (August 1987): 215–22. http://dx.doi.org/10.1016/0040-6090(87)90235-5.

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Banerjee, Ratnabali, Debajyoti Das, Swati Ray, A. K. Batabyal, and A. K. Barua. "Characterization of tin doped indium oxide films prepared by electron beam evaporation." Solar Energy Materials 13, no. 1 (January 1986): 11–23. http://dx.doi.org/10.1016/0165-1633(86)90024-9.

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Journal articles on the topic 'INDIUM EVAPORATION'

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