Dissertations / Theses on the topic 'INDIUM EVAPORATION'
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Sjödin, Saron Anteneh. "Indium Bump Fabrication using Electroplating for Flip Chip Bonding." Thesis, Mittuniversitetet, Avdelningen för elektronikkonstruktion, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-27939.
Full textMohan, A., J. Suthagar, and T. Mahalingam. "Investigation on the Structural and Optical Properties of Thermally Evaporated Indium Selenide Compound Material for Solar Cell Application." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35133.
Full textPradhan, Puja. "Real Time Spectroscopic Ellipsometry (RTSE) Analysis of Three Stage CIGS Deposition by co-Evaporation." University of Toledo / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1493344332238366.
Full textLe, Priol Arnaud. "Métallurgie d'alliages d'interconnexion pour composants optoélectroniques." Thesis, Poitiers, 2013. http://www.theses.fr/2013POIT2286.
Full textInSb based infra-red (IR) detectors are constituted by a Si integrated circuit and an InSb matrix which are electrically and mechanically connected thanks to solder balls in pure indium deposited on underbump metallic layers (UBM). IR detectors are cooled down to liquid nitrogen for each use. This thermomechanical solicitation affects the device reliability. The thesis purpose is to improve the UBM and solder metallurgies taking into account thermal cycling behavior of industrial components. The effect of deposition conditions on the diffusion barrier microstructure, electrical properties and diffusion efficiency is estimated for several refractory metals : tungsten-titanium alloy (WTi) and tantalum (Ta). The physical vapor deposition yield unexpected and harmful metastable phase formation, which can be controlled using a sub-layer. An indium-silver eutectic alloy is deposited by evaporation which allows to reduce the melting temperature and hence residual stresses within the component. The effect of Ag alloying is estimated by both the contact resistance and mechanical shear resistance. Results emphasize that the metallurgy is affected by the deposition technique, which impinges on IR detectors thermomechanical behavior
Gutta, Venkatesh. "INVESTIGATIONS OF CuInTe2 / CdS & CdTe / CdS HETEROJUNCTION SOLAR CELLS." UKnowledge, 2011. http://uknowledge.uky.edu/gradschool_theses/654.
Full textLee, Sang-Goog. "Réalisation et caractérisation d'un capteur magnétique en couche mince." Rouen, 1994. http://www.theses.fr/1994ROUES050.
Full textKhatri, Himal. "New Deposition Process of Cu(In,Ga)Se2 Thin Films for Solar Cell Applications." Connect to full text in OhioLINK ETD Center, 2009. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1259612259.
Full textTwigg, Katherine L. "A smart climatology of evaporation duct height and surface radar propagation in the Indian Ocean." Thesis, Monterey, Calif. : Naval Postgraduate School, 2007. http://bosun.nps.edu/uhtbin/hyperion-image.exe/07Sep%5FTwigg.pdf.
Full textThesis Advisor(s): Murphree, James T. ; Frederickson, Paul A. "September 2007." Description based on title screen as viewed on October 25, 2007. Includes bibliographical references (p. 129-134). Also available in print.
Mukati, Kapil. "An alternative structure for next generation regulatory controllers and scale-up of copper(indium gallium)selenide thin film co-evaporative physical vapor deposition process." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 311 p, 2007. http://proquest.umi.com/pqdweb?did=1397912441&sid=12&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Full textPrincipal faculty advisor: Babatunde Ogunnaike, Dept. of Chemical Engineering, and Robert W. Birkmire, Dept. of Materials Science & Engineering. Includes bibliographical references.
Mougins, François-Henry de. "Le refroidissement induit par évaporation dans les gels aqueux de faibles épaisseurs en vue de l'application au traitement des brûlures." Paris 7, 2003. http://www.theses.fr/2003PA077079.
Full textScherer, Karin. "Nouveaux matériaux pour des couches minces diélectriques à bas indice de réfraction : application aux traitements antireflet sur verres ophtalmiques." Paris 6, 2001. http://www.theses.fr/2001PA066574.
Full textIazzolino, Antonio. "Engineering three-dimensional extended arrays of densely packed nano particles for optical metamaterials using microfluidIque evaporation." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-01059235.
Full textNouvelot, Luc. "Evaluation et réalisation de miroirs diélectriques à profil d'indice continu et périodique (filtres rugates)." Grenoble 1, 1993. http://www.theses.fr/1993GRE10069.
Full textGrünberger, Olivier. "Etude géochimique et isotopique de l'infiltration sous climat tropical contrasté , massif du piton des neiges, Ile de la Réunion." Phd thesis, Université Paris Sud - Paris XI, 1989. http://tel.archives-ouvertes.fr/tel-00865995.
Full textZAN, SHI-WEI, and 詹世偉. "Preparation and characterization of Indium-Tin-Oxide deposited by direct thermal evaporation of metal Indium and Tin." Thesis, 1986. http://ndltd.ncl.edu.tw/handle/21530797670498052337.
Full textLee, Ming Chun, and 李明俊. "Characteristics of Copper Indium Diselenide Thin Film Prepared by the Evaporation Method." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/60886534466593524672.
Full text長庚大學
光電工程研究所
102
In the thesis we investigate the characteristics of Chalcopyrite CuInSe2 (CIS) absorber layers by using evaporated selenization method. This method is a two step process: (i) deposition of stacked metallic bilayers of indium and copper by evaporation, (ii) selenization of the precursor layers in a closed quartz box by the furnace. Chalcopyrite is well known to form a stable phase at significant deviations from stoichiometry ranging from copper poor ([Cu]/[In]<1) to copper rich ([Cu]/[In]>1). In today’s best CIS solar cells, the composition is in the range of [Cu]/[In]≒0.9. In copper excess usually have CuxSe it suggested that CuxSe formation at the surface may be a limiting step for the CuInSe2 formation. The study is observed that the copper over indium([Cu][In]) ratio from 0.88~1.79 with CIS thin film. The XRD spectra indicate that the peak position of (112) direction in the CIS absorber layer will shift to higher angle when the copper rich. In order to understand the influence of various process parameters the depth-resolved XPS of the absorber layer is required. Binding energy of Cu 2p3/2 are increase with CuxSe. And having secondary phase the element of Se are existence in Se 3d5/2. By Chemical bath deposition (CBD), cadmium sulfide (CdS) is also studied in this thesis. IV measurement of [Cu]/[In]≒0.9 cell has a small leakage current. The efficiency of Al/ ZnO:Al /i-ZnO/ CdS/ CuInSe2/ Mo/ SLG solar cell is 4.62%, Voc=0.34 V, Jsc=29.1 (mA/cm2), FF=0.49.
GAUR, SHAILENDRA KUMAR. "HEAT & MASS TRANSFER ANALYSIS OF GOLD, TIN & INDIUM THIN LAYER DEPOSITION ON SURFACE." Thesis, 2016. http://dspace.dtu.ac.in:8080/jspui/handle/repository/14778.
Full textChang, Chia-Hua, and 張家華. "Growth and Photovoltaic Applications of Indium Tin Oxide Nanostructures Using Electron Beam Evaporation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/14752975434876605238.
Full text國立交通大學
光電工程學系
100
Indium-tin-oxide (ITO) has been a useful material as transparent conductive electrodes for the last two decades. Both solar cells and light-emitting-diodes benefit from the property of ITO to improve the conversion efficiency or light extraction, respectively. In this work, we developed a growth method to deposit ITO nanostructures, including the nano-columns, nanowhiskers, and nanorods. These nanostructures were applied for the GaAs-based, Si-based, and polymer-based solar cells, to reduce the surface reflectance or increase carrier collection. We further investigated the growth mechanism of ITO nanostructures which was dominated by the tin-induced self-catalytic vapor-liquid-solid (VLS) and the vapor-solid (VS) growth mechanism. The growth process could be divided into three steps: (1) nucleation, (2) column growth, and (3) side branch growth. We show evidence of the initial droplets formation to confirm the existence of the liquid phase. The core-shell structure had been observed in the TEM image of ITO nanorods, and hence the EDX analysis demonstrated higher concentration of tin in the shell than that in the core. The shell layer could absorb ITO vapor during the growth of ITO nanowhiskers. After investigation of the growth mechanism of ITO nanostructures, the applications had been discussed. First, we deposited the oriented ITO nano-columns on GaAs-based solar cell to provide broadband antireflection. Therefore, the conversion efficiency of the ITO nano-columns GaAs-based solar cell increased by 28% compared to a cell without any AR treatment. Next, we deposited the ITO nanowhiskers on the micro groove textured Si-based solar cell to combine the nano-and micro-textured antireflective coating. The compound antireflective structures increased light harvesting in the near-infrared. The conversion efficiency of the combined antireflective coated Si-based solar cell achieved 17.2%, compared to 16.1% of the conventional Si based solar. Finally, the ITO nanorods were prepared on ITO glass which functioned as three-dimensional (3D) nanoelectrode. The nano-electrode increased the hole collection efficiency for the organic solar cell. Compared to the organic solar cell with a flat electrode, the conversion efficiency and lifetime of the ITO nano-electrode organic solar cell increased by 10%, and 100%, respectively. We then conclude the growth and photovoltaic applications of the ITO nanostructures and provide future outlooks.
Huang, Meng-Shu, and 黃孟書. "Fabrication and characterization of Indium Tin Oxide transparent conductive films by Electron-Beam Evaporation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/yv5b2a.
Full text國立虎尾科技大學
光電與材料科技研究所
95
Abstract ITO is the most popular material for transparent electrical conduction film of commercial applications. There are several applications based on its excellent properties such as good conductivity, high transmittance rate for visible light, high absorbability for ultraviolet region and good chemical stability. This thesis studies the e-beam vaporized ITO thin film on glass substrate. The optical and electrical properties were studies with several process parameters such as the flow rate of oxygen, growth temperature, e-beam accelerated voltage. Systematic studies for the ITO related process parameters in the e-beam technology were well done in this thesis. With well controlled ITO film with process parameters optimized in the thesis, sheet resistance as low as 9.8(Ω/□) and high transparency as 95% with wavelength 470nm can both be achieved.
Jie, Chen Zheng, and 陳政傑. "A study of indium tin-oxide transparent conductive oxide films by using electron-beam evaporation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/60540112983326686828.
Full text明新科技大學
化學工程與材料科技系碩士班
101
Transparent conductive electrodes with high transmittance and low resistance to optoelectronic device have gradually been widely used,such as touch panel、solar call、liquid crystal displays、with the rapid expansion of these product markets、the growth transparent conductive electrode rapidly increase in demand.Wherein the Indium tin oxide (Indium Tin Oxide; ITO) plays the important role of the conductive electrodes in a plane display. ITO film having a low resistance, and have a high transmittance in the visible range, the method of the preparation of indium tin oxide, mainly by sputtering method and electron beam deposition method, wherein the electron beam deposition method does not cause the surface of the elementinjury, and therefore subject to widespread attention. In this study, using an electron beam deposition method a growing Indium tin oxide thin film on the sodaline glass. Study their structural, electrical and optical properties of the thin film micro different deposition thickness, substrate temperature, spot oxygen flow and subsequent heat process.Using X-ray diffraction analyzer crystalline; Scanning electron microscope to observe the surface morphology of the sample; UV / VIS / NIR spectrometer transmittance ; sheet resistance of the four-point probe studies; Hall effectThe measurement to obtain the carrier concentration and the mobility of the thin film. The interpretation of the results, indium tin oxide film at a substrate temperature of 200 oC growth ITO film 100 nm thin film growth leads to 8 sccm O2 annealing at 300 ℃ in the 550nm transmittance of 98%, you can get a better quality factor of 0.055Ω-1, the experimental results using an electron beam vapor deposition by appropriate annealing the transparent conductive film of low resistance and high transmittance can be obtained.
Huang, Chiayu, and 黃嘉裕. "The Study Of Copper Indium Selenide Solar Cell Absorption Layer Film Growth By Evaporation And Selenization." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/58811479874853803329.
Full text國防大學理工學院
電子工程碩士班
100
In this thesis, the copper indium selenide (CuInSe2) absorber layer was prepared by two step methods. In the first step, the metal precursor of copper and indium stacked layers was deposited by evaporator sequentially. In the second step, the precursor was selenized by heating the selenium powder in a closed quartz box to form a chalcopyrite structure of CuInSe2 thin films. Three types of metal precursors, copper-rich, stoichiometric and copper-poor, were deposited by changing the deposited thickness of copper and indium. To examine the metal alloy property, the stable phase of Cu11In9 is formed when the annealing temperature is higher than 175°C. After selenization, the CuInSe2 thin films with copper-poor exhibit small particle size, low carrier concentration and large resistance in comparison with that of stoichiometric and copper-rich. The optical bandgaps of CuInSe2 thin film with copper-rich, stoichiometric and copper-poor, which is characterized by light transmission and reflection, are 0.99, 0.97 and 1.18eV, respectively. The solar efficiency of CuInSe2 absorber layer with copper-rich, stoichiometric and copper-poor is 0.16%, 2.09% and 0.04%, respectively. It is noted that large leakage current resulted in very low efficiency in copper-rich and copper-poor films due to high conductivity and large roughness, respectively. In addition, cadmium sulfide (CdS) is also studied in this thesis. Chemical bath deposition (CBD) was used to deposit CdS thin films. The deposited CdS films exhibit a cubic structure, the sulfur-to-cadmium ratio of 0.64 and a resistance of 108Ω. The deposited rates of CdS films are different in glass substrate and Mo-coated on glass substrate. The CdS films have a significant influence on the solar efficiency depending on whether the CdS films completely cover the CuInSe2 surface or not.
Rakesh, Kumar Rajaboina. "Growth of Semiconductor and Semiconducting Oxides Nanowires by Vacuum Evaporation Methods." Thesis, 2013. http://etd.iisc.ac.in/handle/2005/3400.
Full textRakesh, Kumar Rajaboina. "Growth of Semiconductor and Semiconducting Oxides Nanowires by Vacuum Evaporation Methods." Thesis, 2013. http://etd.iisc.ernet.in/2005/3400.
Full text謝明穎. "Study on the Synthesis, Optical and Electrical Properties of Tin-Doped Indium Oxide Nanowires by Thermal Evaporation Method." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/59130193560766787511.
Full textLai, Han Chung, and 賴漢中. "The Preparation of Copper Indium Gallium Diselenide (CuInxGa1-xSe2) Photo Absorber Layers using Co-evaporation for Photovoltaic Application." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/31237979252295865697.
Full text長庚大學
化工與材料工程學系
99
In this study, the Cu-In-Ga-Se (CIGS) semiconductor thin films were deposited on glass substrates and indium-tin-oxide (ITO) coated glass substrates using selenization of co-evaporated Cu-In-Ga metal alloys . The effect of the Cu/(In+Ga) and Ga /(In+Ga) molar ratio in Cu-In-Ga metal alloys on the structural, optical and electrical properties of CIGS thin film were investigated. X-ray diffraction pattern of samples ( XRD ) revealed that samples in this study were chalcopyrite CIGS phase. Energy dispersive analysis of X-ray ( EDAX ) showed that compositions of CuIn 1-x Ga x Se 2 thin film were the function of the Cu-In-Ga molar ratio in metal alloys. The thickness of samples were in the range of 1.8 ~ 4 µm. The direct energy band gap of samples varied from 1.28~ 1.50 eV, depending on Cu/(In+Ga) and Ga/(In+Ga) molar ratios in samples. Maximum photocurrent density of samples reached to 0.24 mA/cm 2 in the solution containing S 2- and SO 3 2- ions. The carrier concentration of samples varied from 2.86 × 10 18 ~ 3.82 × 10 12 cm -3 using Hall measurement. The resistivity of samples decreased with an increase in Cu/(In+Ga) molar ratio in samples. The conduction type of CuIn 1-x Ga x Se 2 thin films are all p-type. Glass/Mo/CIGS/CdS/IZO/AZO/Ag solar cell gaved V OC of 0.238 V, J SC of 0.134 mA/cm 2 , FF of 0.220, and conversion efficiency of 0.01 %.
Bansal, Lalit Kumar. "Evaporation and Buckling Dynamics of Sessile Droplets Resting on Hydrophobic Substrates." Thesis, 2018. http://etd.iisc.ac.in/handle/2005/4027.
Full textBansal, Lalit Kumar. "Evaporation and Buckling Dynamics of Sessile Droplets Resting on Hydrophobic Substrates." Thesis, 2018. http://etd.iisc.ernet.in/2005/4004.
Full textNayak, Maheswar. "Soft X-ray Multilayers As Polarizing Elements : Fabrication, And Studies Of Surfaces And Interfaces." Thesis, 2007. https://etd.iisc.ac.in/handle/2005/649.
Full textNayak, Maheswar. "Soft X-ray Multilayers As Polarizing Elements : Fabrication, And Studies Of Surfaces And Interfaces." Thesis, 2007. http://hdl.handle.net/2005/649.
Full text