Relevant bibliographies by topics / In0.53Ga0.47As(001)

Academic literature on the topic 'In0.53Ga0.47As(001)'

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Published: 9 March 2023
Last updated: 10 March 2023

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Journal articles on the topic "In0.53Ga0.47As(001)"

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Georgakilas, Alexandros, Athanasios Dimoulas, Aristotelis Christou, and John Stoemenos. "Alloy clustering and defect structure in the molecular beam epitaxy of In0.53Ga0.47As on silicon." Journal of Materials Research 7, no. 8 (August 1992): 2194–204. http://dx.doi.org/10.1557/jmr.1992.2194.

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The MBE growth of InxGa1−xAs (x ∼ 0.53) on silicon substrates has been investigated emphasizing the effects of substrate orientation and buffer layers between In0.53Ga0.47As and Si. It is shown that growth on silicon substrates misoriented from (001) toward a [110] direction eliminates the presence of antiphase domains. The best In0.53Ga0.47As surface morphology was obtained when a 0.9 μm epitaxial Si buffer was initially grown, followed by a pre-exposure of the silicon surface to As4 at 350 °C, followed by the growth of In0.53Ga0.47As. Threading dislocations, stacking faults, low-angle grain boundaries, and spinodal decomposition were observed by TEM in the InGaAs layers. The spinodal contrast scale was shown to depend on the buffer type and the total InGaAs thickness. Thick buffers consisted of GaAs or graded InxGa1−xAs layers, and large In0.53Ga0.47As thicknesses favor the development of a coarse-scale spinodal decomposition with periodicity around 0.1 μm. Thin GaAs buffers or direct In0.53Ga0.47As growth on Si may result in a fine-scale decomposition of periodicity ∼10 nm. The principal strain direction of the spinodal decomposition appeared along the [1$\overline 1$0] direction, parallel to the vicinal Si surface step edges. InGaAs immiscibility affects the InGaAs growth process, favoring a 3-D growth mode. X-ray diffraction measurements and photoreflectance spectra indicated that the sample quality was improved for samples exhibiting a fine-scale spinodal decomposition contrast even if they contained a higher dislocation density. Threading dislocations run almost parallel to the [001] growth axis and are not affected by strained layers and short period (InAs)3/(GaAs)3 superlattices. The lowest double crystal diffractometry FWHM for the (004) InGaAs reflection was 720 arc sec and has been obtained growing InGaAs directly on Si, while the lowest dislocation density was 3 × 109 cm−2 and was obtained using a 1.5 μm GaAs buffer before the In0.53Ga0.47As deposition.
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Liao, X. Z., Y. T. Zhu, Y. M. Qiu, D. Uhl, and H. F. Xu. "Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001)." Applied Physics Letters 84, no. 4 (January 26, 2004): 511–13. http://dx.doi.org/10.1063/1.1642754.

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Hybertsen, Mark S. "Interface strain at the lattice-matched In0.53Ga0.47As/InP(001) heterointerface." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 4 (July 1990): 773. http://dx.doi.org/10.1116/1.584964.

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Shen, Jian, Jonathon B. Clemens, Evgueni A. Chagarov, Darby L. Feldwinn, Wilhelm Melitz, Tao Song, Sarah R. Bishop, Andrew C. Kummel, and Ravi Droopad. "Structural and electronic properties of group III Rich In0.53Ga0.47As(001)." Surface Science 604, no. 19-20 (September 2010): 1757–66. http://dx.doi.org/10.1016/j.susc.2010.07.001.

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Klenov, Dmitri O., Joshua M. Zide, Jeramy D. Zimmerman, Arthur C. Gossard, and Susanne Stemmer. "Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs." Applied Physics Letters 86, no. 24 (June 13, 2005): 241901. http://dx.doi.org/10.1063/1.1947910.

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Shen, Jian, Darby L. Winn, Wilhelm Melitz, Jonathon B. Clemens, and Andrew C. Kummel. "Real Space Surface Reconstructions of Decapped As-rich In0.53Ga0.47As(001)-(2×4)." ECS Transactions 16, no. 5 (December 18, 2019): 463–68. http://dx.doi.org/10.1149/1.2981627.

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Lee, Jennifer Y., Chris Pearson, and Joanna M. Millunchick. "Arsenic dependence on the morphology of ultrathin GaAs layers on In0.53Ga0.47As∕InP(001)." Journal of Applied Physics 103, no. 10 (May 15, 2008): 104309. http://dx.doi.org/10.1063/1.2917276.

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Seo, Jae Hwa, Young Jun Yoon, Seongjae Cho, Heung-Sik Tae, Jung-Hee Lee, and In Man Kang. "Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 7615–19. http://dx.doi.org/10.1166/jnn.2015.11141.

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The In0.53Ga0.47As-based planar-type junctionless fieled-effect transistor (JLFET) and fin-type FET (FinFET) have been designed and characterized by technology computer-aided design (TCAD) simulations. Because of their attractive material characteristics, the combination of In0.53Ga0.47As and InP has been adopted in some of the most recent semiconductor devices. In particular, the In0.53Ga0.47As-based transistor using an InP buffer is highly attractive due to its superior electrostatic performance which results from the by particular characteristics of the In0.53Ga0.47As material. In this paper, we focus on using small-signal RF modeling and Y-parameter extraction methods th extract various RF characteristics, such as gate capacitance, transconductance (gm), cut-off frequency (fT), and maximum oscillation frequency (fmax). The proposed In0.53Ga0.47As-based FinFET exhibits an on-state current (Ion) of 1030 μA/μm and an off-state current (Ioff) of 1.2×10−13 A/μm with a threshold voltage (Vth) of 0.1 V, and a subthreshold swing (S) of 96 mV/dec. In addition, fT and fmax are determined to be 243 GHz and 1.6 THz, respectively.
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Chen, Hu, and Jun Chen. "PbS QDs/Al2O3/In0.53Ga0.47As infrared photodetector with fast response and high sensitivity." Applied Physics Letters 121, no. 18 (October 31, 2022): 181106. http://dx.doi.org/10.1063/5.0117223.

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Due to the size effect, multi-exciton effect, confinement effect, and tunable bandgap, quantum dots (QDs) have gradually been used in near-infrared photodetectors. In this paper, PbS QDs were integrated with In0.53Ga0.47As materials, and a PbS QDs/In0.53Ga0.47As hybrid photodetector with Al2O3 was investigated. Passivation of PbS QDs by ligand replacement and insertion of Al2O3 reduced the dark current density from 9.24 × 10−6 to 4.67 × 10−6 A·cm−2, which enabled the detector to obtain a high responsivity of 0.97 A·W−1 under −1 V bias, and the detectivity reached 2.21 × 1010 Jones. In addition, we found that the PbS QDs/In0.53Ga0.47As near-infrared photodetector with Al2O3 obtained a fast rise and fall time, which could respond to high-frequency signals. The findings will have application in the PbS QDs/In0.53Ga0.47As hybrid near-infrared photodetectors.
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Shen, Jian, Darby L. Feldwinn, Wilhelm Melitz, Ravi Droopad, and Andrew C. Kummel. "Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(001)." Microelectronic Engineering 88, no. 4 (April 2011): 377–82. http://dx.doi.org/10.1016/j.mee.2010.10.023.

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Dissertations / Theses on the topic "In0.53Ga0.47As(001)"

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GRAZIANETTI, CARLO. "Scanning tunneling microscopy investigation of III-V compound semiconductors and novel 2D nanolattices." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2014. http://hdl.handle.net/10281/50028.

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The research activity described in this thesis is mainly devoted to study the fundamental properties of alternate channel materials to bulk silicon. Indeed, there is consensus, in the scientific and industrial community, that silicon is approaching its ultimate scaling limit. Today, increasing the performance of integrated circuits by scaling silicon metal-oxide-semiconductor field effect transistor (MOSFET) is becoming more and more difficult and, therefore, a systematic survey of possible alternate solutions should be considered. This purpose is taken into account by exploring two paradigmatic candidates, namely, a promising III-V semiconductor, In0.53Ga0.47As(001), and a novel two-dimensional (2D) material, silicene, the silicon counterpart of graphene, which does not exist in nature. The former represents a mid-term option fully compatible with silicon-based processing, in a More Moore strategy, while the latter represents a completely different approach that can be envisioned for ultimate device downscaling either in a More Moore perspective or even further for More than Moore prospects. Such a systematic survey has to be carried out with probes which might consider the atomic properties, since the progressive shrinking of devices dimensions is pointing towards atomic-scale. In this framework, the choice of Scanning Tunneling Microscope (STM) represents a suitable probe which can address either the morphological properties or the electronic ones through Scanning Tunneling Spectroscopy (STS), which is the most powerful STM-related capability, since it allows for atomic-scale characterization of the local density of states (LDOS) of the sample. The local electronic properties of In0.53Ga0.47As are investigated at the interface with Al2O3. Two pristine surfaces, the As-rich (2x4) reconstruction and the group-III-rich (In/Ga) (4x2) reconstruction are scrutinized by STM. STS shows that for both n-type doped reconstructions the Fermi level is initially pinned near the valence band. However, upon in situ growth of the Al2O3 thin film by Molecular Beam Epitaxy (MBE), partial unpinning occurs, while post-deposition annealing restores the original pinned condition in a different extent depending on the surface reconstruction. This behavior is rationalized in terms of an interface dipole induced by positive charges in the as-grown oxide, which are suppressed upon annealing. Hence, this comparison shows that the (2x4) reconstruction is more favorable for application-oriented perspectives of In0.53Ga0.47As as an active channel in MOSFET devices. Despite the high expectations, graphene, the nowadays best-known 2D material, has severe limitations for logic electronics due to its gapless nature. These limitations could be possibly overcome by silicene (and germanene). Here, a thoroughly study about the formation by MBE of various 2D phases of silicon on the Ag(111) surface depending on coverage and substrate temperature is reported. The resulting scenario is depicted by several silicene phases showing different periodicities and orientations with respect to the silver substrate. These structural phases stem from the intrinsic flexibility of silicene originated by its buckled structure, in contrast to graphene. The periodically modulated LDOS of silicene superstructures evidenced by STS spectra could be ascribed to the symmetry breaking in the triangular sublattices originated by the presence of buckled honeycomb lattice. The instability of silicene upon air exposure leads to the necessary encapsulation which is provided by an aluminum-based capping layer. This configuration allows the transfer of the samples for ex situ Raman spectroscopy measurements. Both experimental and theoretical Raman spectra show the presence of E2g mode, namely G peak in graphene, which is the fingerprint of honeycomb lattice, and by other vibrational modes activated by the intrinsic disorder related to the buckling. Both theoretical models and experiments proved that silicene phases have different mixture of sp2-sp3 hybridization that means different bond lengths, bond angles, and buckling parameters. Moreover these phases of silicene exhibit different electronic properties, ranging from semiconducting to semi-metal character. The perspective of future high performance logics should probably experience an intermediate step at III-V compound semiconductors, but it is very likely to expect that 2D materials will remain a hot topic in future electronics.
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Barthélémy, Agnès. "Etude des super-reseaux fe (001)/cr (001) et fe (001)/ag (001)." Paris 11, 1991. http://www.theses.fr/1991PA112032.

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Cette these presente l'etude experimentale de super-reseaux magnetiques fe/cr et fe/ag elabores par epitaxie par jet moleculaire. Dans les super-reseaux fe/ag nous avons mis en evidence la presence d'une forte anisotropie d'interface qui aligne l'aimantation perpendiculairement au plan des couches pour des epaisseurs de fe inferieures a 10 a. Cette anisotropie varie peu avec la temperature. Nous avons egalement etudie sur ces super-reseaux, la thermodynamique des systemes bidimensionnels a partir de la variation en temperature de l'aimantation. Dans le cas des super-reseaux fe/cr, nous nous sommes tout d'abord interesses au phenomene de couplage d'echange antiferromagnetique qui aligne antiparallelement les aimantations de deux couches de fe voisines. Nous avons etudie ce couplage par des mesures d'aimantation, de couple magnetique et de diffraction de neutrons et nous avons determine sa variation en fonction de l'epaisseur de cr et de la temperature. Cette these regroupe egalement les resultats experimentaux obtenus sur la dependance en epaisseur, en nombre de couche et en temperature d'une propriete nouvelle qui resulte de la structure en super-reseau: la magnetoresistance geante. Ce travail experimental s'accompagne du developpement d'un modele theorique de la magnetoresistance geante. Ce modele est semi-classique, de type fuchs-sondheimer, et permet de bien mettre en evidence les parametres importants qui regissent ce phenomene
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Wang, Yuekun. "In0.53Ga0.47As-In0.52Al0.48As multiple quantum well THz photoconductive switches and In0.53Ga0.47As-AlAs asymmetric spacer layer tunnel (ASPAT) diodes for THz electronics." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/in053ga047asin052al048as-multiple-quantum-well-thz-photoconductive-switches-and-in053ga047asalas-asymmetric-spacer-layer-tunnel-aspat-diodes-for-thz-electronics(5fd73bd5-aef3-476b-be1b-7498da3f9627).html.

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This thesis is concerned with terahertz (THz) technology from both optical and electronic approaches. On the optical front, the investigation of optimised photoconductive switches included the characterisation, fabrication and testing of devices which can generate and detect THz radiation over the frequency range from DC to ~ 2.5 THz. These devices incorporated semiconductor photoconductors grown under low temperature (LT) Molecular Beam Epitaxy (MBE) conditions and using distributed Bragg reflectors (DBRs). The material properties were studied via numerous characterisation techniques which included Hall Effect and mid infrared reflections. Antenna structures were fabricated on the surface of the active layers and pulsed/continuous wave (CW) signal absorbed by these structures (under bias) generates photocurrent. With the help of the DBRs at certain wavelengths (800 nm and 1550 nm), the absorption coefficient at the corresponding illumination wavelength increased thus leading to significant increase of the THz output power while the materials kept the desirable photoconductive material properties such as high dark resistivity and high electron mobility. The inclusion of DBRs resulted in more than doubling of the THz peak signals across the entire operating frequency range and significant improvements in the relative THz power. For the THz electronic approach, a new type of InP-based Asymmetric Spacer Tunnel Diode (ASPAT), which can be used for high frequency detector, was studied. The asymmetric DC characteristics for this novel tunnel diode showed direct compatibility with high frequency zero-bias detector applications. The devices also showed an extreme thermal stability (less than 7.8% current change from 77 K to 400 K) as the main carrier transport mechanism of the ASPAT was tunnelling. Physical models for this ASPAT diode were developed for both DC (direct current) and AC (alternating current) simulations using the TCAD software tool SILVACO. The simulated DC results showed almost perfect matches with measurements across the entire temperature range from 77 K to 400 K. From RF (radio frequency) measurements, the intrinsic diode parameters were extracted and compared with measured data. The simulated zero biased detector circuits operating at 100 GHz and 240 GHz using the new InGaAs-AlAs ASPAT diode (4*4 micrometer square) showed comparable voltage sensitivities to state of the art Schottky barrier diodes (SBDs) detectors but with the added advantage of excellent thermal stability.
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Heyd, Darrick Vaughn. "Photodissociation of methyl bromide adsorbed on LiF(001), NaCl(001), and MgO(001)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape16/PQDD_0001/NQ27950.pdf.

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Charcape, Galo Emilio Sisniegas. "Crescimento de In0.52Al0.48As e In0.53Ga0.47As sobre InP por MBE." Universidade de São Paulo, 1997. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012009-094440/.

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Neste trabalho a epitaxia por feixes moleculares (Molecular Beam Epitaxy: MBE) foi utilizada para crescer estruturas de gases bidimensionais a base de In0.53Ga0.47As/ In0.52Al0.48As sobre substrato de fosfeto de índio (InP) e analisar suas propriedades estruturais. elétricas e óticas através de técnicas de caracterização, tais como efeito Hall, fotoluminescência (FL). Shubnikov-de Haas (SdH) e microscopia eletrônica de varredura (MEV). A calibração dos parâmetros de crescimento tais como a taxa de crescimento e a composição das ligas In0.53Ga0.47As/ In0.52Al0.48As foi feita através da observação das oscilações da da difração de elétrons de alta energia observado em reflexão (Reflection High-Energy Electron Difraction : RHEED) A densidade de dopante tipo n (em nosso caso. 0 silício) foi determinada posteriormente através de medidas de efeito Hall usando a técnica de Van der Pauw. Os resultados da Fotoluminescência mostram uma transição doador-banda com largura a meia altura (Full Width at Half Maximum : FWHM) de aproximadamente 23 meV, para a liga de In0.52Al0.48As. A formação de gás bidimensional nestas mesmas amostras tem sido observado indiretamente pela ocorrência de oscilações SdH.
In this work Molecular Beam Epitaxy (MBE) was used to growth bidimensional gas structures based on In0.53Ga0.47As/ In0.52Al0.48As on Indium Phosfate substrate (lnP) Structural. electrical and optical properties were analyzed by characterisation techniques such as Hall eflect, photoluminescence (PL), Shubnikov-de Haas (SdH) and Scanning Electron Microscope (SEM) Growth parameter calibration such as growth rate and alloy composition of In0.53Ga0.47As/ In0.52Al0.48As was determined through observation of Reflexion High-Energy Electron Diffraction (RHEED) oscillation. Density of type dopant (in our case silicon Si) was obtained by. Hall effect measurements using Van der Pauw geometry Photoluminescence results show donor to band transition with Full Width at Half Maxima (FHWM) of approximatly 23meV, for the In0.52Al0.48As alloy. Bidimensional gas formation was indirectly observed in these samples through SdH oscillations.
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Deutsch, Thierry. "Modélisation des multicouches métalliques Au(001)/Ni, Ag(001)/Ni et Au(001)/Co." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0096.

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L'objet de cette these est la simulation des multicouches metalliques au(001)/ni, ag(001)/ni et au(001)/co elaborees par epitaxie par jets moleculaires. Les systemes etudies ont la particularite de presenter une grande difference de parametre de maille (de l'ordre de 16%). Un potentiel semi-empirique base sur la methode des liaisons fortes permet de modeliser les interactions atomiques entre l'au, l'ag, le ni et le co. Des simulations a o k (relaxation numerique) et a 300 k (dynamique moleculaire) ont mis en evidence une transition de structure du film de ni ou de co: pour une epaisseur de 5 monocouches d'une structure quadratique centree, le ni ou le co se transforme en une structure hexagonale. L'etude de la stabilite et des contraintes internes du film de ni sur un substrat au(001) est abordee. Une methode ab-initio (lmto) permet d'affiner nos resultats. La croissance de ces multicouches par dynamique moleculaire a mis en evidence un mecanisme d'echange entre les atomes deposes (ni ou co) et les atomes du substrat (au ou ag). Les energies d'activation de divers processus de diffusion sont en outre calculees. Ces resultats ont ete correles a d'autres methodes telles que le rheed, la diffraction de rayons x, l'exafs et la microscopie electronique a haute resolution
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Dooley, Roger Benesh Greg. "Surface magnetism of Ni(001), Co(001), and Fe(001) an embedding Green function approach /." Waco, Tex. : Baylor University, 2007. http://hdl.handle.net/2104/5051.

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Ivashchenko, V., S. Veprek, and V. Shevchenko. "Comparative first-principles molecular dynamics study of TiN(001)/SiN/TiN(001) and TiN(001)/SiC/TiN(001) interfaces in superhard nanocomposites." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20546.

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Heterostructures TiN(001)/SiN/TiN(001) and TiN(001)/SiC/TiN(001), with one monolayer (ML) of interfacial SiN and SiC, respectively, inserted between five monolayer thick B1-TiN, were investigated using first-principles quantum molecular dynamics (QMD) calculations. The temperature dependent QMD simulations at 300 K in combination with subsequent variable-cell structural relaxation revealed that the TiN(001)/SiN/TiN(001) interface exists as pseudomorphic B1-SiN layer only at 0 K, and as a superposition of distorted octahedral SiN6 and tetrahedral SiN4 units aligned along the (110) direction at a finite temperature. Thus, at 300 K, the interfacial layer is not epitaxial. Instead it consists of aggregates of the B1-SiN-like and Si3N4-like distorted clusters. However, in the the TiN(001)/SiC/TiN(001) heterostructures, the interfacial layer remains epitaxial B1-SiC at 0 K as well as at 300 K, with only a small shift of nitrogen atoms on both sides of the interface towards the silicon atoms. A comparison with the results obtained by earlier "static" ab initio DFT calculations at 0 K shows the great advantage of the QMD calculations that allow us to reveal structural reconstructions caused by thermal activation. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20546
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Farmer, Corrie David. "Fabrication and evaluation of In0.52Al0.48As/In0.53Ga0.47As/InP quantum cascade laser." Thesis, University of Glasgow, 2000. http://theses.gla.ac.uk/6883/.

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InP-based quantum cascade (QC) lasers were fabricated following the design reported by Faist et al. with the initial aim of applying them in gas sensing applications. The lasers were characterised by our collaborators, Cockburn et al. Unfortunately, the performance of our QC lasers (QCLs) did not live up to expectations, and the gas sensing objectives became replaced with resolving the issues of their poor performance. This was achieved through a mixture of laser fabrication, characterisation, and optical and thermal waveguide modelling. The devices fabricated included mesa-etched QCLs, shallow-etched QCLs, and novel native-oxide defined QCLs.2D thermal modelling using a commercial finite element modelling package was carried out to solve the 2D non-linear thermal diffusion equation for all of the structures listed above, as well as for InP-clad and buried heterostructure configurations. The temperature elevations, distributions and heat flow vectors were calculated under high, but not unrealistic thermal power generation in the active waveguide core. The relative effectiveness at dissipating heat was judged using these results. The modelling indicated the presence of high temperatures and thermal gradients across the active waveguide core under continuous wave (CW) operation. The thermal resistance derived through the use of the thermal modelling agreed very well with that calculated by Faist et al. from experimental data. The optical modelling, which was instrumental in resolving the anomalous behaviour of our QC lasers, comprised of two parts. First, modelling of the dielectric permittivity gave values of n and a for InP, In0.52Al0.48As and In0.53Ga0.47As as a function of the free-carrier density and wavelength. The calculations were made using single and multiple-oscillator models with a free-carrier contribution in the form of a classical Drude expression. The dependencies of the electron mass and electron mobility on the free electron density were taken in the calculations. These values were used to perform 2D optical modelling of the waveguide using a commercial, fully vectorial waveguide mode solver. This yielded the effective index, confinement factor, facet reflectivity, waveguide loss and far-field distribution for each mode. These, in turn, were used to calculate the threshold gain for each mode. Perhaps the most important findings were the prediction of the existence of higher order transverse modes, that these modes can have low values of gth (comparable or better than that of the fundamental mode of the waveguide) and that the collection efficiency will vary dramatically from mode to mode. The modelling also indicated that the performance of the QCLs would suffer greatly with an increase in the InP substrate doping level, even just from 1x1018 cm-3 to 3x1018 cm-3.
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Aubel, Dominique. "Apport des techniques de photoémission à la connaissance des hétérostructures Ge/Si(001), Si/Ge(001), Si1-xGex/Si(001) et Si1-xGex/Ge(001)." Mulhouse, 1995. http://www.theses.fr/1995MULH0412.

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Les premières phases de la croissance à température ambiante (TA) et 400°C des deux hétérostructures Si/Ge(001) et Ge/Si(001) ont été étudiées par des techniques de surface comme la spectroscopie de photoélectrons X(XPS) et UV(UPS) et la diffraction d'électrons lents (LEED). Un effort particulier a été fait pour développer la dernière née des méthodes d'investigations structurales dérivée de l'XPS à savoir la diffraction de photoélectrons X(XPD). L'analyse fine de l'émergence des signatures XFD et la mesure des contrastes sur les pics de diffusion vers l'avant en fonction du recouvrement, apportent des renseignements précis concernant l'empilement des atomes dans les couches et donc les modes de croissance initiaux. En second lieu, nous avons élaboré par voie MBE des hétérostructures d'alliages Si1-xGex sur Si(001) pour x faible et Si1-xGex sur Ge(001) pour x fort. Ces couches ont été fabriquées à 400°C par co-évaporation et analysées in situ par XPS, UPS, LEED et par XPD, avant d'être analysées ex situ par XRD, RBS, Raman dans le cadre de différentes collaborations. La conjonction de ces caractérisations ex situ avec nos études de surface in situ, nous a permis de déterminer la qualité cristallographique, la composition en Ge et l'état de contrainte de ces alliages Si1-xGex. La terminaison de surface de ces alliages Si1-xGex a été sondée in situ par des expériences de nitruration initiale qui ont revélé une forte ségrégation du Ge à la surface de ceux-ci. En troisième lieu, des résultats exploratoires sont présentés sur la nitruration thermique des alliages Si1-xGex soulignant la sélectivité de nitruration thermique entre Si et Ge. Contrairement au processus thermique, la nitruration assistée par plasma permet d'obtenir une nitruration simultanée des deux éléments de l'alliage
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Books on the topic "In0.53Ga0.47As(001)"

1

Heyd, Darrick Vaughn. Photodissociation of methyl bromide adsorbed on LiF(001), NaCl(001), and MgO(001). Ottawa: National Library of Canada = Bibliothèque nationale du Canada, 1997.

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Shanben, Haowei. Mei li 001. Beijing: Zhong guo qing gong ye chu ban she, 2003.

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Clark, Wook-Jin. Megagogo: Volume 001. Portland, OR: Oni Press, 2014.

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University of North London. School of Mathematical Sciences., ed. MS 001 Foundation maths. [London]: University of North London, School of Mathematical Sciences, 1995.

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Druzhnikov, I͡Uriĭ. Donoschik 001, ili, Voznesenie Pavlika Morozova. Moskva: Russkiĭ putʹ, 2006.

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Druzhnikov, I͡Uriĭ. Donoschik 001, ili, Voznesenie Pavlika Morozova. Moskva: Moskovskiĭ rabochiĭ, 1995.

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(Firm), XAM, ed. Orela: Multiple subjects 001, 002, 003. 4th ed. Boston, MA: Xamonline Inc., 2011.

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Rouverand, Gilles. Kuaï: L'affaire du Shanghai taxi 001. Vanves: Marabout, 2016.

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Service, United States Marshals. Policy notices 93-001 to present. [Washington, D.C.]: U.S. Dept. of Justice, U.S. Marshals Service, 1993.

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Hughes, Ross, Johnson Jeff, Madison Hawthorne, and Ozzy Longoria. Eta 001: 001. Madison Hawthorne, 2018.

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Book chapters on the topic "In0.53Ga0.47As(001)"

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Kieseling, F., W. Braun, P. Ils, K. H. Wang, and A. Forchel. "Energy Relaxation in In0.53ga0.47as/Inp Quantum Wires." In Hot Carriers in Semiconductors, 309–13. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_71.

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Shelton, Lawrence G. "Develecology 001." In The Bronfenbrenner Primer, 135–39. New York, NY : Routledge, 2018.: Routledge, 2018. http://dx.doi.org/10.4324/9781315136066-25.

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Celinski, Z., B. Heinrich, J. F. Cochran, K. Myrtle, and A. S. Arrott. "Ferromagnetic Resonance Studies of BCC Epitaxial Ultrathin Fe(001)/Cu(001) Bilayers and Fe(001)/Cu(001)/Fe(001) Trilayers." In NATO ASI Series, 77–80. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2590-9_10.

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Saini, Navneet Kaur, and Raghvendra Sahai Saxena. "A New In0.53Ga0.47As LDMOS with Tunneling Junction for Improved on State Performance." In Springer Proceedings in Physics, 665–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_102.

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Awasthi, Himanshi, Nitish Kumar, Vaibhav Purwar, Abhinav Gupta, Vikrant Varshney, and Sanjeev Rai. "Comparative Study of Silicon and In0.53Ga0.47As-Based Gate-All-Around (GAA) MOSFETs." In Lecture Notes in Electrical Engineering, 137–43. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-2761-3_13.

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Esser, N., and E. Speiser. "Sb-terminated Si(001) and Ge(001)." In Physics of Solid Surfaces, 580–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_138.

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Hamanaka, Y., A. Nakamura, K. Tanase, R. Ohga, Y. Nonogaki, Y. Fujiwara, and Y. Takeda. "Ultrafast relaxation dynamics of photoexcited carriers in an In0.53Ga0.47As/InP multiple-quantum well." In Springer Proceedings in Physics, 621–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_293.

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Mittag, Martin. "LB 001 Gerüstarbeiten." In Ausschreibungshilfe Rohbau, 49–68. Wiesbaden: Vieweg+Teubner Verlag, 2002. http://dx.doi.org/10.1007/978-3-322-80202-6_3.

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Esser, N., and E. Speiser. "Clean Ge(001)." In Physics of Solid Surfaces, 564–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_135.

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Kim, J. H., and S. S. Li. "A High-Speed Au/In0.53Ga0.47As/InP Schottky Barrier Photodiode for 1.3–1.65 µm Photodetection." In High-Speed Electronics, 214–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_42.

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Conference papers on the topic "In0.53Ga0.47As(001)"

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Edmonds, M., T. J. Kent, S. Wolf, K. Sardashti, M. Chang, J. Kachian, R. Droopad, E. Chagarov, and A. C. Kummel. "In0.53Ga0.47As(001)−(2x4) and Si0.5Ge0.5(110) surface passivation by self-limiting deposition of silicon containing control layers." In 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2016. http://dx.doi.org/10.1109/vlsi-tsa.2016.7480528.

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Lo, D. C. W., Y. K. Chung, and S. R. Forrest. "Monolithically integrated ln0.53Ga0.47As receiver with voltage-tunable transimpedance." In Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ipr.1991.tuc4.

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Monolithically integrated InP-based optical receivers are attractive for long-wavelength high-density optical communications. Here we reported an In0.53Ga0.47As receiver which consists of an In0.53Ga0.47As PIN photodiode and an In0.53Ga0.47As JFET transimpedance amplifier. The In0.53Ga0.47As JFETs have previously demonstrated high stability and suitable for large-scale InP-based OEICs.1 A narrow-gate In0.53Ga0.47As JFET (5μm wide and 30μm long) is used as an active feedback resistor for the transimpedance amplifier. The output resistance of the narrow-gate transistor operated in its linear region can be dynamically tuned over a wide range. In addition to the active resistors, the transimpedance amplifier has a common source inverter, a level-shifter and an output buffer. Figure 1 shows the circuit diagram and photomicrograph of the monolithic receiver.
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Huang, J., N. Goel, P. Lysaght, D. Veksler, P. Nagaiah, S. Oktyabrsky, J. Price, et al. "Detailed high-k/In0.53Ga0.47As interface understanding to enable improved In0.53Ga0.47As gate stack quality." In 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2011. http://dx.doi.org/10.1109/vtsa.2011.5872218.

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Cartier, E., A. Majumdar, K. T. Lee, T. Ando, M. M. Frank, J. Rozen, K. A. Jenkins, et al. "Electron mobility in thin In0.53Ga0.47As channel." In ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC). IEEE, 2017. http://dx.doi.org/10.1109/essderc.2017.8066649.

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Isley, Vicky, and Paul Smith. "randomSeed 001." In ACM SIGGRAPH 2006 Art gallery. New York, New York, USA: ACM Press, 2006. http://dx.doi.org/10.1145/1178977.1178995.

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Aubague, Franÿois-Xavier. "Test 001." In ACM SIGGRAPH 98 Conference abstracts and applications. New York, New York, USA: ACM Press, 1998. http://dx.doi.org/10.1145/280953.289341.

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Suzuki, Masato. "Terahertz emitters based on ion-implanted In0.53Ga0.47As." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994545.

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Podor, Balint, D. Vignaud, I. M. Tiginyanu, L. Csontos, V. V. Ursaki, and V. P. Shontya. "Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov and Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280418.

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Joshi, Abhay M., Gregory H. Olsen, Vladimir S. Ban, E. Mykietyn, and D. R. Mohr. "Popcorn noise in linear In0.53Ga0.47As detector arrays." In Aerospace Sensing, edited by Raymond S. Balcerak, Paul W. Pellegrini, and Dean A. Scribner. SPIE, 1992. http://dx.doi.org/10.1117/12.137772.

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Lo, D. C. W., Y. K. Chung, and S. R. Forrest. "Monolithically Integrated In0.53Ga0.47As Voltage-Tunable Transimpedance Amplifier." In Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/ipr.1990.pd6.

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Transimpedance amplifiers provide a high dynamic range and wide bandwidth over that obtained using high impedance amplifiers.1 However, most InP-based integrated optical receivers demonstrated today use high impedance amplifiers. This is because the integrated high-impedance amplifiers are easy to characterize. Another reason is due to the relatively low transimpedance observed for the integrated transimpedance amplifiers, which is attributed to the low value of the integrated feedback resistor.2 The integrated resistor is commonly fabricated using the FET channel layer because of its simplicity for integration with other FETs in the circuit. However, such resistors with a high value of resistance consume a large area which can result in a large parasitic shunt capacitance and inductance. Here we describe an In0.53Ga0.47As JFET transimpedance amplifier, which consists of a common source inverter stage, a level-shift buffer stage, and a narrow-gate transistor3 (5µm wide and 30µm long) as an active feedback resistor. The output resistance of the narrow-gate transistor operated in its linear region can be dynamically tuned over a wide range. Moreover, the device can be made very small to reduce parasitic capacitance and inductance.
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Reports on the topic "In0.53Ga0.47As(001)"

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Alwin, Jennifer. Comparison Study of Upper Subcritical Limits Derived Using Sensitivity/Uncertainty Tools: Case Studies of U233-SOL-THERM-001-001, MIX-COMP-THERM-001-001, IEU-MET-FAST-002-001, LEU-COMP-THERM-001-001, LEU-SOL-THERM-004-001. Office of Scientific and Technical Information (OSTI), July 2021. http://dx.doi.org/10.2172/1897666.

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Alwin, Jennifer Louise, and Forrest B. Brown. Case Studies of Baseline Upper Subcritical Limits using Whisper-1.1: HEU-MET-FAST-013-001, HEU-SOL-THERM-001-008, PU-MET-FAST-022-001, and PU-SOL-THERM-001-001. Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1471304.

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Kim, J. S., M. H. Mohamed, and L. L. Kesmodel. Vibrational Spectroscopy of Ordered Oxygen Adlayers on Ni/Cu(001) and Co/Cu(001) Thin Film Systems. Fort Belvoir, VA: Defense Technical Information Center, May 1991. http://dx.doi.org/10.21236/ada235921.

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MILLER, E. M., and K. D. DOBBIN. CSER 99-001: PFP LAB Dentirating calciner. Office of Scientific and Technical Information (OSTI), February 1999. http://dx.doi.org/10.2172/781515.

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Wang, W. K., T. D. Liu, H. F. Lai, J. A. Yarmoff, A. A. Baski, E. J. Moler, J. Morais, R. Denecke, and C. S. Fadley. Photoelectron spectroscopy of iodine-covered Si(001). Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603666.

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Ків, Арнольд Юхимович, Володимир Миколайович Соловйов, and Татьяна Ивановна Максимова. Моделирование стабилизации поверхности (001) Si низкоэнергетическими ионами. Видавничий відділ КДПУ, 1999. http://dx.doi.org/10.31812/0564/1022.

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Анализ особенностей формирования и влияния радиационных допороговых и послепороговых дефектов на основные физические процессы в полупроводниках привел нас к следующему предположению. Облучение поверхности кремния нейтральными ионами с энергиями, меньшими энергии дефектообразования Ed может способствовать переходу ее структуры в энергетически более стабильное состояние. Этот метод стабилизации поверхности может быть более предпочтительным, чем использование распространенной в настоящее время ионной бомбардировки с энергиями ионов порядка нескольких килоэлектронвольт, которая может приводить к значительным перестройкам приповерхностных слоев.
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Kiv, A. E., T. I. Maximova, and V. N. Soloviev. Microstructure of the relaxed (001) Si surface. [б. в.], October 1999. http://dx.doi.org/10.31812/0564/1244.

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We have applied molecular dynamics method and semi-empirical potential [1] to obtain the realistic picture of Si surface layers relaxation. The starting configuration was taken as a parallelepiped containing 864 atoms. There were 12 layers with 72 atoms in each one. Periodic boundary conditions were used in two dimensions.
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Kiv, A. E., T. I. Maximova, and V. N. Soloviev. Microstructure of the relaxed (001) Si surface. [б. в.], December 1999. http://dx.doi.org/10.31812/0564/1245.

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We have applied molecular dynamics method and semi-empirical potential [1] to obtain the realistic picture of Si surface layers relaxation.The starting configuration was taken as a parallelepiped containing 864 atoms. There were 12 layers with 72 atoms in each one. Periodic boundary conditions were used in two dimensions. At first all atoms were in normal lattice positions. The relaxation of Si surface, which corresponds to (001) plane was investigated. MD method was applied in its standard form i.e. the equations of motion were solved by using of the central difference scheme. The time-step was 10-14s.
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Піддубний, Б. А., and Володимир Миколайович Соловйов. Комп’ютерне моделювання радіаційно-стимульованої стабілізації (001) Si поверхні. РВГІЦ КДПУ ім. В. Винниченка, 1999. http://dx.doi.org/10.31812/0564/1025.

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Поверхні, границі розподілу напівпровідників відіграють суттєву роль в процесі формування й функціонування значної кількості приладів та структур сучасної мікроелектроники. Ідеальна поверхня є неврівноваженою структурою, і в залежності від умов її одержання, відпалу, пасівації може трансформуватись в один з більш ніж 300 відомих станів. В сучасних теоретичних дослідженнях важливу роль відіграє комп’ютерне моделювання. Воно дозволяє дослідити атомну структуру, електронні, коливальні й оптичні властивості поверхні. В даній роботі методом молекулярної дннамики з потенціалом Стілінджера-Вебера досліджено особливості релаксації (001) поверхні кремнія при кімнатній температурі за нормальних умов, а також при її опроміненні низькоенергетичними іонами. Поверхня (001) Si була обрана з огляду на те, що вона є найбільш якісною при одержанні її методом молекулярно-променевої епітаксії і для неї ще не одержано в повній мірі переконливих експериментальних і теоретичних даних.
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Sondericker, D., F. Jona, and P. M. Marcus. Atomic Structure of A (001) Surface of Ni3Al. Fort Belvoir, VA: Defense Technical Information Center, January 1986. http://dx.doi.org/10.21236/ada201552.

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