Dissertations / Theses on the topic 'In silico calculations'
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Elisée, Eddy. "Towards in silico prediction of mutations related to antibiotic resistance." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS350.
Full textAntibiotic resistance is a global concern threatening worldwide health. Indeed, if we don't change our overconsumption of antibiotics, the current situation could worsen until a "post-antibiotic" era in which existing treatment would be ineffective against microbial infections. Despite the natural occurrence of antibiotic resistance, the misuse of antibiotics is speeding up the process. Furthermore, presence of multi-resistant pathogens negates the effect of modern treatments and usual surgeries (caesarean sections, organ transplantations...) might be riskier in the future, or even lethal. That's why, common guidelines have to be edicted by health authorities in order to control antibiotic use at every level of society, from individuals to healthcare industry including health professionals and agriculture sector. As for scientific research, new strategies have to be considered in order to limit the spread of antibiotic resistance. In that context, the presented thesis aimed at developing a protocol to predict, by free energy calculations, β-lactamase mutations which could promote the hydolysis of β-lactams antibiotics. In order to achieve that, we developed several methodological approaches including: (1) new parameters for zinc enzymes implemented in OPLS-AA force field and thereafter validated using molecular dynamics simulations of representative zinc-containing metalloenzymes, (2) a protocol to parameterize covalent ligands in order to analyze the dynamical behavior of some β-lactams in CMY-136, a novel β-lactamase recently characterized in our laboratory, and (3) a pmx-based free energy protocol. The latter was also assessed through several international blinded prediction challenges, and finally used to find out why carbamylation of the catalytic serine is not observed in certain OXA enzymes. Throughout this work, we made significant improvements in our protocol, and now everything is in place for an exhaustive prediction of possible mutations in β-lactamases
Ahmad, Shah Masood. "Filling the Structure-Reactivity Gap: in silico approaches to rationalize the design of molecular catalysts." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422346.
Full text黃新祥 and Sun-cheung Wong. "Ab initio calculations of silicon clusters." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1998. http://hub.hku.hk/bib/B3122197X.
Full textWong, Sun-cheung. "Ab initio calculations of silicon clusters." Hong Kong : University of Hong Kong, 1998. http://sunzi.lib.hku.hk/hkuto/record.jsp?B20192708.
Full textWright, K. T. "Electrical transport calculations for off-axis silicon." Thesis, Cardiff University, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.373877.
Full textWu, Wei. "Exchange calculations between donors in silicon and metal-phthalocyanine dimer." Thesis, University College London (University of London), 2007. http://discovery.ucl.ac.uk/1445188/.
Full textMarkevich, Alexander. "Ab-initio calculations of diffusion barriers of small vacancy clusters in silicon." Master's thesis, Universidade de Aveiro, 2009. http://hdl.handle.net/10773/2288.
Full textEsta tese apresenta os resultados de um programa de investigação sobre a difusão da lacuna, bi-lacuna e tri-lacuna em silício utilizando simulações numéricas pelo método da teoria do funcional da densidade. Este método está implementado na forma de um programa informático referido como AIMPRO (Ab Initio Modelling PROgram). Para o cálculo dos pontos cela dos mecanismos de difusão foi usado o método “Nudged Elastic Band”. As condições fronteira dos problemas foram impostas recorrendo à utilização de agregados esféricos de silício com 275 atomos, cuja superfície foi saturada por ligações Si-H. As lacunas foram então introduzidas no centro destes agregados. Os valores calculados das barreiras de difusão para a lacuna simples e para a bi-lacuna são respectivamente 0.68 e 1.75 eV. Estes valores apresentam um acordo razoável com os obtidos experimentalmente e obtidos em outros cálculos anteriores. A barreira de difusão da tri-lacuna foi, de acordo com a literatura disponível, calculada pela primeira vêz. O mecanismo de difusão mais favorável apresenta uma barreira de 2.2 eV. No seguimento dos resultados para a lacuna e bi-lacuna, pensamos que este resultado sobrestima a barreira em cerca de 0.25 eV, colocando a nossa melhor estimativa em 1.9- 2.0 eV. Varias fontes de erro nos resultados são comentadas, assim como são sugeridas várias formas de as evitar. ABSTRACT: This work presents the results of a computational investigation into the diffusion of the single vacancy (V) and small vacancy clusters, divacancy (V2) and trivacancy (V3), in silicon. The calculations were performed principally using local density functional theory as implemented by the AIMPRO (Ab Initio Modelling PROgram) code. The Nudged Elastic Band Method was used for elucidating diffusion paths and obtaining the energy barriers for diffusion of the defects considered. Based on ab-initio calculations with H-terminated Si clusters with 275 host atoms, diffusion paths for neutral Vn (n = 1 to 3) defects were found. Calculated values of the activation energy for the diffusion of the Si vacancy and divacancy are 0.68 and 1.75 eV, respectively. These values are in a reasonable agreement with those derived from experimental and previous ab-initio modelling studies. The diffusion of trivacancy in Si has been modelled for the first time. The diffusion barrier of V3 along the proposed diffusion path was found to be about 2.2 eV. This result comes overestimated as the experimental data indicates that the values of diffusion barriers for divacancy and trivacancy in Si should be similar. Probable sources of the calculation errors have been considered and possible ways to surmount these difficulties are proposed.
Foster, A. S., M. A. Gosálvez, T. Hynninen, R. M. Nieminen, and K. Sato. "First-principles calculations of Cu adsorption on an H-terminated Si surface." American Physical Society, 2007. http://hdl.handle.net/2237/11269.
Full textCorsetti, Fabiano. "On the properties of point defects in silicon nanostructures from ab initio calculations." Thesis, Imperial College London, 2012. http://hdl.handle.net/10044/1/9754.
Full textDiebel, Milan. "Application of ab-initio calculations to modeling of nanoscale diffusion and activation in silicon /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9727.
Full textPan, Chunhua Durig James R. "Raman and infrared spectra, conformational stability, normal coordinate analysis, vibrational assignment and ab initio calculations of some silicon or germanium containing compounds." Diss., UMK access, 2005.
Find full text"A dissertation in chemistry and computer networking." Advisor: James R. Durig. Typescript. Vita. Description based on contents viewed Nov. 21, 2007; title from "catalog record" of the print edition. Includes bibliographical references (leaves 415-424). Online version of the print edition.
You, Jie. "Calculation of bit error rates of optical signal transmission in nano-scale silicon photonic waveguides." Thesis, University College London (University of London), 2017. http://discovery.ucl.ac.uk/1565186/.
Full textDai, Xianqi, and 戴憲起. "A study of the structural properties of SiC and GaN surfaces and theirinterfaces by first principle total energy calculation." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2003. http://hub.hku.hk/bib/B31244130.
Full textEpelde, Elezcano Nerea. "Matériaux Hybrides nanostructures photoactifs pour des applications optiques et biomédicales." Thesis, Pau, 2016. http://www.theses.fr/2016PAUU3007/document.
Full textAlong this manuscript different hybrid materials are synthesized and extensively characterized for several uses: from optical to therapeutic applications. First, by the intercalation of different dyes, styryl 722 and pyronine-Y into several smectite clay films, macroscopically ordered system are obtained. Clay films are elaborated by spin-coating technique and the dyes are intercalated by the immersion of clay thin films into dye solutions. The effect of clay on the dye properties is deeply analyzed and its preferential orientation in the interlayer space of the clay is studied by the anisotropic response of the films to the linear polarized light. Second, large silica monoliths with embedded laser dyes with strong absorption and fluorescence bands in different region of the Visible spectrum are attained by sol-gel chemistry to obtain solid-state dye laser (SSDL) with good photo, thermal and chemical stabilities. Third, silica nanoparticles (NP) with suitable size (50 nm) and functionalized external surface are also synthesised by sol-gel chemistry. Through the encapsulation of fluorescent dye molecules in their core and by the grafting of photosensitizers on their shell, biocompatible nanoparticles for bio-imaging and Photodynamic Therapy (PDT) applications are prepared. In order to optimize their properties, a careful investigation of the photophysical properties and mainly the singlet oxygen generation of a large range of new photosensitizers based on chromophores known as BODIPYs, is previously carried out. Based on these results, some efficient BODIPYs are selected for grafting on silica nanoparticles in order to use them for PDT. The photophysical properties of all these hybrid materials are analyzed by absorption and fluorescence (steady-state and time correlated) spectroscopies, and the singlet oxygen measurements are monitored by direct method (recording the singlet oxygen luminescence at 1270 nm) and by indirect method (using selective chemical probe). Moreover, the hybrid materials are fully characterized by several techniques such as, SEM, TEM, XRD, XPS, IR, DLS, BET
Chaurasia, S. "IN SILICO STUDY OF PROTEIN PROTEIN INTERACTION STABILIZATION AND MECHANICAL FORCE APPLICATION ON BIOMOLECULES." Doctoral thesis, Università degli Studi di Milano, 2014. http://hdl.handle.net/2434/229253.
Full textStevenson, Paul. "Nuclear structure calculations using many-body perturbation theory with a separable interaction." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312333.
Full textBoztosun, Ismail. "Coupled-channels calculations for the scattering of deformed light heavy-ions : a challenge to the standard approach." Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325373.
Full textZhang, Ping. "Investigations of the structure of silcate glasses and carbohydrates by silicon-29 and carbon-13 nuclear magnetic resonance and by ab initio calculations /." The Ohio State University, 1999. http://rave.ohiolink.edu/etdc/view?acc_num=osu1488187763845702.
Full textAmbati, Jyotrhirmai. "STUDIES ON SILICON NMR CHARACTERIZATION AND KINETIC MODELING OF THE STRUCTURAL EVOLUTION OF SILOXANE-BASED MATERIALS AND THEIR APPLICATIONS IN DRUG DELIVERY AND ADSORPTION." UKnowledge, 2011. http://uknowledge.uky.edu/gradschool_diss/203.
Full textPfanner, Gernot [Verfasser], Jörg [Akademischer Betreuer] Neugebauer, and W. Gero [Akademischer Betreuer] Schmidt. "The dangling-bond defect in silicon : Insights into electronic and structural effects from first-principles calculations of the EPR-parameters / Gernot Pfanner. Betreuer: Jörg Neugebauer ; W. Gero Schmidt." Paderborn : Universitätsbibliothek, 2012. http://d-nb.info/1036551784/34.
Full textNgandjong, Alain Cabrel. "Modélisation structurale des clusters d’alliages supportés : effet du support de silice et effet de taille." Thesis, Orléans, 2015. http://www.theses.fr/2015ORLE2070/document.
Full textNumerical simulations have so far neglected the influence of amorphous silica substrate on the structure of metallic nanoparticles due to its relatively weak interaction with deposited nanoparticles. However, experimental studies have often shown a truncation effect on the structure of nanoparticles. The idea of this work was to study the influence of this substrate on the structure of silver nanoparticles using molecular modeling (Monte Carlo and molecular dynamics). The objective of this work was firstly to determine silver-silica interatomic potential. This was achieved using experimental data of wetting angles in solid and liquid phase. On the other hand, silver-silica interaction intensity was determined by DFT calculations on cristobalite which is a polymorph of crystalline silica having the same density as amorphous silica. The adhesions energies obtained were used to fit the Lennard-Jones parameters for the silver-silica interaction. The study of the structural stability of silver nanoparticles supported at zero temperature was performed for three levels of approximation of the support. (1): the smooth wall approximation where the support is described by a square-well whose depth is related to the adhesion energy of the nanoparticle, (2): an atomistic model of flat amorphous silica, (3): an atomistic model of rough amorphous silica. The influence of the temperature on the structure was investigated by melting and recrystallization of the silver nanoparticles deposited on the two silica supports. In order to study the temperature stability of the nanoparticles the free energy calculation of the nanoparticles was discussed
Wagner, Anke A. [Verfasser], and Klaus [Akademischer Betreuer] Blaum. "The g-factor of the valence electron bound in lithiumlike silicon 28Si11+: The most stringent test of relativistic many-electron calculations in a magnetic field / Anke A. Wagner ; Betreuer: Klaus Blaum." Heidelberg : Universitätsbibliothek Heidelberg, 2013. http://d-nb.info/1177148439/34.
Full textPtacek, Saija Maria. "Funktionalisierte Alkylmethacrylat-Blockcopolymere als Template zur Darstellung geordneter Silica-Strukturen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-26524.
Full textThe present study deals with the synthesis of alkyl methacrylate block copolymers, the characterization of their chemical structure and the microphase separation behavior in bulk and thin films. The main objective of this work was the attachment of functional groups to an alkyl methacrylate diblock copolymer system. A first evaluation of the ability of functionalized block copolymer structures to act as a templating material regarding silica formation in sol-gel synthesis of alkoxysilanes was aspired. The diblock copolymer system of poly(pentyl metacrylate-b-methyl methacrylate) (PPMA-b-PMMA) was chosen. It was synthesized following the mechanism of anionic polymerization to achieve effective control over molar mass, composition and polydispersity. The allyl functionality was chosen for a versatilely modifiable and stable functional group and attached to the terminal chain end by endcapping the living polymer chain ends with allyl bromide. The head of the chain was functionalized by initiation with allyl lithium. By combining functional initiation and endcapping, bifunctional diblock copolymers were synthesized. Furthermore multifunctionalized block copolymers were produced by anionic polymerization. By sequential anionic polymerization of PMA, allyl methacrylate and finally MMA, triblock copolymers were obtained. Two more classes of multifunctionalized block copolymers with functional groups randomly distributed in one of the two blocks were synthesized by random copolymerization. All types of mono-, di- and multiallylfunctionalized block copolymers were transformed into mono-, di- and multihydroxylfunctionalized block copolymers by hydroboration and subsequent oxidation. The polymer-analogue reaction of hydroxyl groups to triethoxysilane functions was carried out exemplarily for hydroxy terminated PMMA. The microphase separation behavior of the block copolymers was investigated by a combination of methods such as SAXS, T-SAXS, GISAXS, TEM and AFM. The influence of number and position of functional groups along the chain was examined. The block copolymers synthesized show a microphase separation behavior in accordance to previous results. Despite the low value of the Flory-Huggins interaction parameter χPMA,MMA = 0,065 phase separation occurred and the transition from the ordered to the disordered state (ODT) was followed for selected samples. Bulk morphologies are not influenced by the presence of one or two allyl or hydroxyl groups. In case of considerably more than two functional groups attached to the block copolymer chain the microphase separation behavior of nonfunctionalized and functionalized block copolymers cannot be compared directly. Block copolymers having functional groups randomly distributed along the chain of one of the two methacrylic blocks generally show the typical behavior of diblock copolymers. Their phase separation becomes less pronounced than in pure diblock copolymers, sometimes cannot be detected. To some extent this observation may be referred to increased polydispersities and partial crosslinking. If considerably more than two groups were attached to the block copolymer chain, the tendency towards phase separation increased in case of an increasing value of the effective interaction parameter compared to nonfunctionalized diblock copolymers. Microphase separation behavior and morphology formation are more affected by highly polar groups such as the hydroxyl function than by less polar groups like the allyl function. In triblock copolymers with a middle block of successive allyl or hydroxyl functions the systems tends to form a three phase system which offers much more possibilities regarding the formation of ordered structures. Experimental results of phase separation were compared to theoretical phase diagrams, which were calculated by a Mean Field approach for nonfunctionalized diblock and triblock copolymers with multiallyl- or multihydroxylfunctionalized middle block based on RPA. The experimental results are in good accordance with the simulated spinodal condition. To increase the understanding of microphase separation processes, the dynamic relaxation behavior of the system was investigated. Therefore samples were examined by broadband dielectric spectroscopy. It was shown that local movements of the block copolymer system were decelerated in general, cooperative dynamics of the α processes were slowed down for the fluent PPMA block while they were accelerated for the glassy PMMA block. After bulk morphology investigation thin films of non-, mono-, di- and multifunctionalized block copolymers were prepared. Generally thin films develope the same morphologies as in the bulk state. Due to the confined geometry of a thin film thick films tend to form structures oriented parallel to the wafer surface, while in thin films with thicknesses lower than the respective bulk domain spacing standing structures are constraint. For cylindrical morphologies the impact of film thickness is more obvious than in symmetric lamellar structures. With respect to a possible application of nanostructured diblock copolymers different approaches were taken by project partners using non-, mono- and difunctionalized block copolymers of the present study. Remarkable in this context was the application of block copolymers as template for the creation of ordered silica structures. A doctoral dissertation on organic/inorganic hybrid materials by sol-gel process was prepared in Modena. Methods developed in this thesis were adopted to the present study and further investigated on multifunctionalized block copolymer systems. First investigations aiming at the evaluation of the templating abilities of alkyl methacrylate block copolymers in silica sol-gel reactions were carried out with multihydroxyfunctionalized di- and triblock copolymers. Preliminary results give reason to the expectation of multihydroxyfunctionalized di- and triblock copolymers being able to direct the formation of silica nanoparticles in sol-gel reactions carried out in situ with silica precursors, enforcing the chemical bonding between organic and inorganic phases and influencing the shape of silica nanostructures by the default block copolymer nanostructure. Indeed silica was incorporated successfully into the cylindrical structure of PPMA-b-PMMA diblock copolymers. Future experiments on removing the organic matrix by solvent or pyrolysis to investigate shape and porosity of the remaining silica structures will increase the understanding of the silica formation process inside a preferential phase or at the interface of the block copolymers. Nevertheless, the silica particle shape can be taylored deliberately only if phase separation behavior and morphology evolution in the composite system containing silica precursor and several derivatives thereof with nonuniform interactions towards block copolymer phases are well understood from the theoretical point of view as well as experimental proof needs to be given over a broader range. The block copolymer system developed in the present study easily can be extended manifoldly regarding the chemical structure of the polymer. In the case of multifunctionalized block copolymers a tremendous variety of different products can be obtained by modulation of composition, molar mass and especially distribution of functional groups to any position along the polymer chain far beyond the limits of the three classes of multifunctionalized di- and triblockstructures chosen for this thesis. It was shown that allyl functions incorporated inherently are able to undergo crosslinking reactions, which may be controlled similarly to network formations by inorganic crosslinkers and may result in defined nanogel structures. Furthermore carbon doublebonds are open to attacks for various polymer-analogue reactions hence offering the possibility of creating a pool of differently functionalized block copolymers from a single sample of allylfunctionalized block copolymer. The results of the present study basically prove a feasibility of the binding of functional groups to alkyl methacrylate block copolymer chains with high control over number and position of functional groups along the polymeric chain. The impact of functional groups on the microphase separation behavior of the block copolymer system was evaluated and will increase the understanding of structure formation in organic/inorganic hybrid materials of future work
Araújo, Augusto de Lelis. "Investigação dos estados topologicamente protegidos em siliceno e germaneno." Universidade Federal de Uberlândia, 2014. https://repositorio.ufu.br/handle/123456789/15668.
Full textO objetivo principal deste trabalho é a investigação e obtenção dos estados topologicamente protegidos de superfície em nano-fitas criadas a partir das folhas de Germaneno e Siliceno. Estas folhas pertencem a classe dos Isolantes Topológicos e correspondem a monocamadas de átomos de Germânio e Silício, em um arranjo hexagonal que se assemelha a folha do Grafeno. Para esta investigação, realizamos um estudo das propriedades eletrônicas e estruturais destas folhas, bem como de suas respectivas nano-fitas, através de cálculos de primeiros princípios fundamentados na teoria do funcional da densidade (DFT). Nesta metodologia utilizamos a aproximação do gradiente generalizado (GGA) para a estimativa do termo de troca e correlação, e o método PAW para o potencial efetivo e a expansão em ondas planas dos orbitais de Kohn-Sham. Realizamos a simulação computacional com o auxílio do pacote VASP (Vienna ab-initio Simulation Package). Como ponto de partida para nossa pesquisa, utilizamos a metodologia da física do estado sólido com o intuito de descrever a estrutura cristalina das folhas, bem como seu espaço recíproco. Posteriormente analisamos as estruturas de bandas, a partir das quais muitas de suas propriedades podem ser visualizadas. Para esta tarefa, inicialmente procedemos à investigação da estabilidade destes sistemas via cálculos de energia total, obtendo o parâmetro de rede a que minimiza a energia do sistema. Obtivemos também a energia de corte ECUT utilizada em nossos cálculos, ou em outras palavras, a determinação do número de ondas planas necessárias para expandir as funções de onda eletrônicas no formalismo da DFT. Prosseguimos nosso estudo, com a criação e análise de duas distintas configurações de nano-fitas, uma que corresponde a um corte simples e direto da folha com terminação no padrão armchair, e a outra baseada em uma reconstrução destas bordas, que acaba por fornecer um sistema mais estável energeticamente. Posteriormente obtivemos as estruturas eletrônicas, e realizamos um estudo de sua variação em função da alteração da largura da nano-fita e a relaxação iônica de suas bordas. De certa maneira, modificamos os parâmetros acima, de forma a obter um sistema que nos fornecesse um gap nulo, ou pelo menos desprezível, bem como uma determinada configuração para a textura de spin, de modo a verificarmos a evidência de uma proteção topológica nos estados de superfície nestas nano-fitas.
Mestre em Física
Chauvier, Clément. "Nouvelles réactions d'hydroboration et d'hydrosilylation par transfert avec des réducteurs renouvelables à base d'acide formique." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS359/document.
Full textThe utilization of cheap and abundant sustainable resources such as carbon dioxide or biomass derivatives as source of fuel and chemicals imposes the development of efficient reduction methods, able to promote the conversion of C-O bonds (π and σ) into C-H bonds in an energy and atom efficient manner. Within the realm of C-O reduction methods, the utilization of main group element-based hydrides (e.g. LiAlH₄ or NaBH₄) has proven highly beneficial in terms of selectivity and versatility in the reduction of various functional groups, including poorly electrophilic CO₂. This behavior not only stems from the positive kinetic attributes of these reductants in hydride transfer reactions but also from the oxophilicity of the main group elements that ensures the reductions are downhill processes. Yet, the latter appealing features comes at an energetic price, and the preparation of main group hydrides mainly relies on energy-demanding processes, which in turn limit the recyclability of these reductants. With the goal in mind to circumvent these limitations while preserving the beneficial properties of the main-group element during reduction, one of the major objectives of the research project presented therein was to study the unknown reductive chemistry of boryl formate and silyl formates. The latter indeed combine a renewable hydride source (formic acid can be obtained by 2e electroreduction of CO₂) linked directly to the main group element by the oxygen atom of the formate, which hints at the recyclability of this class of main group element-based reductants. Through a joint experimental and theoretical study, it will be demonstrated that these compounds can advantageously replace non-renewable hydroboranes or hydrosilanes in various reducing processes, which will be unified behind the more general concept of transfer hydroelementation
Carette, Thomas. "Isotope effects in atomic spectroscopy of negative ions and neutral atoms: a theoretical contribution." Doctoral thesis, Universite Libre de Bruxelles, 2010. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/210024.
Full textCette thèse est consacrée à l'étude des effets isotopiques dans les atomes neutres et ions négatifs. En particulier, nous ciblons notre recherche sur le calcul ab initio des déplacements isotopiques (DI) sur les électroaffinités des éléments des blocs p des deuxième et troisième périodes (B à F et Al à Cl). Ces derniers sont les systèmes les plus susceptibles d'être l'objet d'études expérimentales de haute précision.
Le premier chapitre se concentre sur une étude didactique du problème atomique et des effets isotopiques. Nous concluons par une description détaillée des motivations de notre thèse.
Le second chapitre présente le modèle Hartree-Fock (HF) et son extension multi-configurationelle (MCHF). Nous y énonçons le théorème de Brillouin et sa généralisation à un ansatz MCHF. Pour ce faire, nous formulons de manière originale le principe d'invariance d'une fonction d'onde CAS (Complete Active Set) par rapport aux rotations d'états d'orbitales. De cette formulation, nous caractérisons la famille des solutions CAS n'interagissant pas avec une fonction d'état de configuration (CSF) particulière et démontrons sa multiplicité. Finalement, nous appliquons notre technique d'analyse à l'étude de modèles concrets et prédisons l'apparition de minima locaux correspondant à chacune de ces solutions GBT. Introduisant le concept de quasi-symétrie de la fonctionnelle d'énergie, nous expliquons l'origine de fortes perturbations du "coeur" atomique dans des modèles particuliers.
Les troisième et quatrième chapitres fournissent les outils méthodologiques de base utilisés dans la deuxième partie de notre thèse qui présente des résultats quantitatifs originaux.
Le cinquième chapitre traite des DI et structures hyperfines des termes les plus bas de S, S-, Cl, Cl-, Si et Si-.
Dans le sixième chapitre, nous rapportons un profond désaccord entre théorie et expérience au sujet de la structure hyperfine de transitions de l'azote dans le infrarouge lointain. Nous montrons que les simulations basées sur nos valeurs de constantes isotopiques sont compatibles avec les spectres enregistrés moyennant une réassignation des raies faibles à des signaux de "cross-overs". Sur cette base, nous déduisons un nouvel ensemble de constantes hyperfines pour les états considérés, en bon accord avec nos valeurs théoriques, en nous basant uniquement sur les données expérimentales.
Le septième chapitre est une étude globale des configurations de plus basse énergie du C et C- (i.e. tous les états liés de ce dernier). Par une étude détaillée de nos incertitudes, nous obtenons des estimations très fiables et de grande précision pour un ensemble de propriétés. En particulier, nous présentons les valeurs de structure fine et hyperfine du C-, ainsi que les probabilités de transitions intra-configurationelles fournissant une base solide pour l'étude spectroscopique de ce système.
Dans le huitième chapitre, nous étudions la périodicité du déplacement spécifique de masse sur l'électroaffinité dans le Tableau Périodique des Eléments. Nous avançons les contributions dominantes qui interviennent dans cette grandeur et analysons les principales limitations des techniques de calcul actuelles dans ce contexte.
Nous présentons nos conclusions générales et les perspectives de notre travail dans le neuvième chapitre.
Doctorat en Sciences
info:eu-repo/semantics/nonPublished
Kimoto, Daiki. "Characterization and Modeling of SiC Integrated Circuits for Harsh Environment." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-223422.
Full textHarsh environment electronics, which can be operated at high-temperature, high-radiation, and corrosive gas environment, has been strongly desired in space exploration and monitoring of nuclear reactors. Silicon Carbide (SiC) is one of the candidates of materials for harsh environment electronics because of its high-temperature and high-radiation tolerance. The objective of this thesis is to characterize 4H-SiC MOSFETs at high- temperature and to construct SPICE models of the 4H-SiC MOSFETs. The MOSFET devices were characterized up to 500ºC. Using the characteristic of a 4H-SiC NMOSFET with L/W = 10 µm/50 µm, a SPICE LEVEL 2 circuit model was constructed. This model describes the DC characteristic of the 4H-SiC MOSFETs in the range of 25 – 450ºC. Based on the SPICE circuit model, the characteristics of operational amplifiers and digital inverters were simulated. Furthermore, the operation of pseudo-CMOS at high-temperature was analyzed and the operation principle of pseudo-CMOS was suggested. The device area and yield of pseudo-CMOS integrated circuits were estimated and it is shown that SiC pseudo-CMOS integrated circuits can use less area than SiC CMOS integrated circuits.
Gerlach, Daniela. "Neuartige höherkoordinierte Siliciumkomplexe mit Pyrrol-2-carbaldimin-Liganden." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2013. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-104526.
Full textRabin, Ségolène. "Etude des mécanismes de distribution des isotopes du fer et du silicium entre les minéraux et les liquides silicatés lors de la différentiation magmatique." Thesis, Toulouse 3, 2021. http://www.theses.fr/2021TOU30206.
Full textIron and silicon isotope measurements in high-temperature geological reservoirs display significant isotopic fractionations, especially within the Earth's crust. However, the mechanisms involved in these fractionations are not fully understood. Their knowledge and that of the fractionation factors in equilibrium conditions is central to interpret the measurements carried on natural rocks. To address this issue, this work is a multidimensional approach based on first principles calculation of Fe and Si isotope fractionations in minerals and silicate melts, on Fe isotope measurements of lavas from Kerguelen Archipelago and on analytical developments of in situ Fe isotope measurements of glasses and olivines using a femtosecond laser coupled to MC-ICP-MS. We provide the theoretical Fe and Si isotope properties of various minerals relevant to Earth crust formation and, for the first time, of silicate melts. Results suggest that significant Fe and Si isotope fractionations are expected between Fe2+-bearing minerals at high temperature. We also show that, besides temperature and redox changes, iron and silicon second neighbors have a major impact on isotopic fractionations. From our set of equilibrium fractionation factors between minerals and melts, we suggest that fractional crystallization could be the main process involved in Fe and Si isotope evolution during magmatic differentiation. In addition, iron isotope composition of Kerguelen oceanic basalts underlines the complexity of the hotspot evolution, with potential source heterogeneity. Finally, the analytical developments performed on MC-ICP-MS with femtosecond laser, allow in situ Fe isotope measurements of silicate glasses and minerals with an uncertainty better than 0.2‰
Nowakowski, Krzysztof A. "Laser beam interaction with materials for microscale applications." Link to electronic thesis, 2005. http://www.wpi.edu/Pubs/ETD/Available/etd-121205-135626/.
Full textKeywords: laser beam characteristics; heat transfer; hole profile; MEMS; hole formation; laser micromachining; laser microdrilling; plasma effects; silicon; 304 stainless steel; Fourier theory; lattice-phonon vibration. Includes bibliographical references. (p.379-390)
Fels, Sabine. "Höherkoordinierte Komplexverbindungen des Siliciums, Germaniums und Zinns mit chiralen O,N,O´-Liganden." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2016. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-211546.
Full textDrozdek, Lukáš. "Silikonový tlumič torzních kmitů řadového šestiválcového vznětového motoru." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2008. http://www.nusl.cz/ntk/nusl-228281.
Full textHiebel, Fanny. "Etude de l'interface graphène - SiC(000-1) (face carbone) par microscopie à effet tunnel et simulations numériques ab initio." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00680068.
Full textVaněk, Štěpán. "Obloukový most přes rychlostní komunikaci." Master's thesis, Vysoké učení technické v Brně. Fakulta stavební, 2013. http://www.nusl.cz/ntk/nusl-226445.
Full textKitschke, Philipp. "Experimental and theoretical studies on germanium-containing precursors for twin polymerization." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-205443.
Full textСімейко, Костянтин Віталійович. "Науково-технологічні основи високотемпературних процесів у електротермічному псевдозрідженому шарі." Diss., Інститут газу Національної Академії Наук України, 2021. https://ena.lpnu.ua/handle/ntb/56157.
Full textFang, Yen-chieh, and 方彥傑. "First-principles calculations of Silicene on Silicon Dioxide." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/r9dncf.
Full text國立交通大學
電子研究所
106
The tremendous advances of modern semiconductor technology has brought forth extraordinarily scaling down of transistors, while in the meantime it is approaching the bottleneck caused by the short-channel effect. One possible solution in overcoming this is to increase the gate-to-channel control or suppress the drain-side-voltage effect, such as the Fin Field-Effect Transistor. Another way to suppress the short-channel effect is to eliminate the region dominated by the drain-side electric field (v.s that from the gate), e.g. to fabricate a thinner channel, and the thinnest that can possibly be made is a single layer of atoms, the so-called two-dimensional materials. Silicene, compared to the first two-dimensional material graphene, not only has a potential advantage of being highly compatible with traditional silicon-based transistor, but also preserve the super high mobility as graphene. In fact, in 2015, a prototype of the first silicene transistor has been demonstrated to be feasible We perform density-functional calculations of both a stand-alone silicene and the interface with the silicon dioxide. Since a strain less silicene has a gapless Dirac cone, we first calculate the electronic structures of the stand-alone strained silicene, and observe its band gap opened as a function of the applied strains. We perform such calculations using a wide range of exchange-correlation functionals, including not only the standard local-density and generalized-gradient approximations but also hybrid functionals HSE06, PBE0, and B3LYP, and further go beyond density-functional theory using the GW approximation to justify which of the above exchange-correlation functionals outperforms the rest in determining the band gap. Then we place the silicene on a silicon dioxide substrate, expecting the mismatch strain to open a band gap. To avoid chemical bonding at the interface so that the silicene π-bonds and in turn the Dirac-cone high mobility are preserved, we need to carefully choose an appropriate termination atomic layer of the silicon dioxide and introduce additional passivation atoms at the interface. We find the Si-terminated silicon dioxide surface passivated by the hydrogen atoms serves as the optimal substrate to obtain a high-mobility semiconducting silicene on top of it, among all the cases in this study. Further investigation into the interface bonding reveals that the optimal property of the above surface likely results from one bond per passviated atom. This suggest that further experiments in fabricating silicene on a silicon dioxide surface may consider passivation treatments using hydrogen, halogens, or single-dangling-bond functional groups like hydroxides. Direct calculations of the mobility of the strain-free, strained but stand-alone, and on-substrate silicenes show that the strained one preserves the same order of magnitude for the mobility, and that of the on-substrate is estimated to be lowered by one order. All our computational findings can provide helpful preliminary guidance in developing transistor based on two-dimensional materials that is feasible in the industrial product lines.
Liou, Jiun-Feng, and 劉君鳳. "Molecular-Dynamics Calculations of Vibration Modes on Silicon (001)." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/17125123612469276031.
Full text國立中山大學
物理學系
85
The large specific surface area of the orous silicon (PS) enables us to distinguish surface vibrational modes from the bulk vibrational modes observed in recent Fourier transformation infrared spectroscopy (FTIR) measurements. In a first step to understand these observations, we have performed ab initio molecular-dynamics (MD) calculations for the vibrational frequencies for the Si (001) surface by the Fourier transformation of the auto correlation functions of velocities of the Si atoms. Our MD method isbased on the real-space Norm-conserving pseudopotential method implemented with the Ceperley-Alder exchange-correlation potential. We have identified that, the vibrational frequency at 180.4 cm-1 can be attributed to dimers on the Si(001) surface. The vibrational frequencies, 48.1 cm-1, 66.1 cm-1, and 518 cm-1 found in this study are near-surface Si vibrational modes. The vibrational frequency at 502 cm-1, is identified to be due to the vibrational motion of inner-layer silicon atoms, which agrees with the Raman measurements.
Santos, Paulo David Rodrigues. "Hydrogen passivation of recombination centers in silicon: density functional theory calculations." Doctoral thesis, 2019. http://hdl.handle.net/10773/29222.
Full textA evolução do mercado de células solares tem motivado avanços significativos na busca de materiais mais baratos e eficientes. O silício cristalino é um dos materiais mais dominantes para aplicações fotovoltaicas (PV), com uma das melhores relações custo-eficiência disponíveis. No entanto, há espaço para melhorias com a eliminação ou passivação de muitos defeitos capazes de capturar portadores de carga positivos e negativos (lacunas e eletrões), seguindo-se a sua recombinação. Impurezas como os metais de transição são alguns dos centros de recombinação mais eficazes que contribuem drasticamente para a perda da eficiência das células solares. Enquanto alguns deles podem ser levados a formar precipitados nos limites de grão dos cristais, abrindo assim alguns caminhos "livres de impurezas", outros, devido à sua baixa difusividade, permanecem isolados ou na forma de pequenos agregados. A passivação com hidrogénio é considerada uma solução importante para mitigar a atividade elétrica associada a esses defeitos. O objetivo principal desta tese é o estudo da interação do hidrogénio com múltiplos defeitos que têm a sua origem tanto em impurezas de metais de transição como em outras impurezas comuns em silício para aplicações fotovoltaicas através de cálculos de primeiros princípios baseados na teoria do funcional da densidade. Estes cálculos foram realizados com a aplicação da aproximação do gradiente generalizado (GGA) para os potenciais de correlação e troca utilizando super-células de silício de 216 ou 512 átomos. Os assuntos aqui abordados podem-se dividir em três partes: O cálculo da estrutura electrónica de impurezas de metais de transição isoladas em silício (capítulo 3), a interação entre o hidrogénio e essas impurezas (capítulos 4 e 5) e a interação entre hidrogénio e defeitos que têm a sua origem em impurezas comuns tais como o carbono e o oxigénio. Os resultados principais obtidos nesta tese podem ser resumidos do seguinte modo: De acordo com os modelos existentes e os resultados experimentais disponíveis, metais de transição dos grupos IV, V e VI são estáveis em posições intersticiais com simetria tetraédrica, produzindo atividade electrónica significativa, com múltiplos níveis dadores profundos e, em alguns casos, níveis aceitadores; a eficácia da passivação por hidrogénio da atividade electrónica produzida por impurezas de metais de transição é limitada pelo tipo de dopagem do material: enquanto que em silício tipo n a formação de complexos de metal-hidrogénio é possível, no caso de silício tipo p isto não se observa devido à repulsão eletrostática a longa distância entre o hidrogénio e as impurezas metálicas, uma vez que, para este tipo de dopagem, em equilíbrio termodinâmico, ambos se encontram no estado de carga positivo. Estes complexos de metal-hidrogénio apresentam significativamente menos atividade electrónica do que metais isolados, e, em alguns casos, existe uma passivação completa do defeito; a interação entre o hidrogénio e impurezas tipicamente inertes como o carbono e oxigénio resulta na formação de um defeito com múltiplas configurações estáveis e que é capaz de funcionar como um centro de captura tanto para eletrões como lacunas, resultando na sua recombinação.
Programa Doutoral em Engenharia Física
Chen, Kuan-Ting, and 陳冠廷. "Hole Mobility Calculation of Strained Silicon-based Alloy Inversion Layer." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/19191830524761977918.
Full text國立中興大學
物理學系所
101
Advanced MOSFET device formed from novel Si-based materials, such as silicon-germanium (SiGe) alloys, are simple and low cost to manufacture. In this thesis we focus on hole mobility in the inversion layer of the MOSFETs using novel silicon-germanium alloy channel materials. The primary topic of this work is the theoretical calculation of hole mobility in the SiGe alloy PMOSFET inversion layer. Hole mobility in the SiGe alloy inversion layer is calculated using a k.p band structure method and the Kubo-Greenwood mobility formula. The model parameters used in the calculations are calibrated by matching the measured low-field mobility of Si and Ge. We study alloy-limited, phonon-limited, and total mobilities in the inversion layers of relaxed and biaxial strained SiGe on (100), (110), and (111) substrates, respectively.
Zeng, Wei-Ming, and 曾韋銘. "Band Structure and Hole Mobility Calculation for Silicon-Germanium alloy." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/48268961943409271088.
Full text國立中興大學
物理學系所
102
With the advantage of being easily integrated into silicon process, silicon-germanium alloy has been applied to Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) components under 28 nm. This study is divided into two parts, including (1) valence band structure of silicon-germanium alloy and (2) hole mobility. In regard to band structure, linear combination of atomic orbits (LCAO) is applied to calculating the band structure of valence band. It is discovered that the splitting energy of Heavy hole and Split of hole at Γ point appears linear with Ge content. The density of states (DOS) and the velocity squared (V2) are calculated by k.p method (6x6 Luttinger-Kohn matrix) and is fitted with polynomial analytical model. The result is close to the numerical computation result. In terms of mobility, Kubo-Greenwood mobility equation is utilized for the calculation. In consideration of phonon scattering and alloy scattering, alloy deformation potential about 0.8-1.0 eV presents more consistent with the experimental measurement.
Chen, Shuo-Fan, and 陳爍帆. "Tight Binding Calculations of Silicon and MoS2 Band Structure and Electronic Properties." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/96986767118471305131.
Full text國立臺灣大學
光電工程學研究所
105
For several decades, the semiconductor device theory was basically based on semi-classical model, where Poisson, drift-diffusion, and Schrodinger equation with effective mass or k.p method are solved to obtain the solution. The materials were often treated as perfect crystals, then the E-k relation and factors like density of state, effective mass and carrier density can all be written as analytical terms. However, as the dimensions of metal-oxide field effect transistors reach a few atomic scale, a model considering many-body physics with a reasonable time consumption is necessary. The new method needs to include the atomic potential into the Schrodinger Hamiltonian, then choose a suitable basis to solve the eigenvalue problem. Among all these approaches, the Tight Binding method (TBM) is the most popular. TBM directly uses the atomic orbital as the basis, and assumes that the potential is bonded tightly at the central atom. In this paper, we applied the tight binding method to silicon nanowires, and calculated the bandgap, effective mass and density of states. We studied the quantum confinement effect on the nanowires with different width, and compared to the infinite quantum well and the perfect crystal models. The results show that the quantum confinement effect will enlarge the bandgap and the carrier effective mass, and also rearrange the conduction band edge position in the k-space due to the effective mass difference between the lateral and perpendicular directions. Then we further applied our model to the novel 2D material. Molybdenum disulfide (MoS2) is a 2D material with good mechanical and chemical properties. It can endure a large strain (12%), and its nanoribbon structure has interesting edge properties. So we applied TBM to MoS2 and its nanoribbon to study the strain effects and edge states properties. The results show that the tensile strain can make the bandgap and the carrier effective mass smaller; however, the K-to-Gamma valley transition at the valence band edge gives it a larger hole effective mass.
Chen, Li-Da, and 陳立達. "The melting temperature calculation of silicon bulk and silicon quantum dots by ab-initio molecular dynamics simulation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/80808645324832064635.
Full textO'Regan, Terrance P. "Electron mobility calculations in silicon, germanium, and III -V substrates with high-κ gate dielectrics." 2008. https://scholarworks.umass.edu/dissertations/AAI3325153.
Full textTsai, Chen-Hsuan, and 蔡臣軒. "Density Functional Theory Calculations for the Small Beryllium-Lithium Alloy Clusters Adsorption on Silicon Surfaces." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/06393833591160497202.
Full text中國文化大學
應用化學研究所
95
We investigated bonding and optimized geometries of 2Li+Be、2Be+Li adsorbed on the Si(111) surfaces at the B3LYP/6-31G* level. In the case of Si(100), the Si9H12 cluster was used to represent the surface unit with one Si=Si surface dimmer, while in the case of Si(111),different sizes of Si-H clusters were used, depending on the extent of marginal distortion of the unit cell. General speaking, the bond lengths in 2Li+Be and 2Be+Li adsorbates are greatly reduced due to the flowing of charge density from metal antibonding orbitals into the surface dangling bonds.
Kim, Jiseok. "Band structure calculations of strained semiconductors using empirical pseudopotential theory." 2011. https://scholarworks.umass.edu/dissertations/AAI3445166.
Full textChiu, Mau-Sen, and 邱茂森. "Dynamical calculation for X-Ray 24-beam diffraction in a Fabry-Perot cavity of silicon." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/92665657069860047007.
Full text國立清華大學
物理學系
96
Abstract This dissertation aims at developing a theoretical approach to treat the 24-wave diffraction occurred in a Fabry-Perot type of resonant cavity of silicon by solving an eigenvalue-eigenvector equation, derived by Stetsko and Chang, deduced from the X-ray multiple-wave dynamical diffraction equation. We anticipate the calculations can offer a crystal clear physical picture for the experimental resonance pattern of the 24-wave diffraction in the X-ray Fabry-Perot cavity, and aid us design an appropriate resonant cavity to fulfill the experimental purposes. The resonance pattern accompanied by nine coplanar diffractions occurred in an X-ray Fabry-Perot cavity of silicon at photon energy of 14.4388 keV at which 24 beams are simultaneously excited has been realized by employing the back diffraction of (12 4 0) by Chang et al.. The calculation is in a good agreement with the observed one. The interference fringes of the concentric rings accompanied by nine diffraction lines passing through the center of rings distinctly show up in the calculated pattern. Meanwhile, the dispersion surface and the linear absorption coefficient have been mapped out from the solved eigenvalues. The excitation of mode and the phases of the diffracted waves have also been calculated from the solved eigenvalues and eigenvectors and from boundary conditions. According to the calculated dispersion surface and linear absorption coefficient, we find that in the total reflection region, most of energy is reflected off the crystal, and the absorption reaches the maximum value, and the phase of the diffracted waves changes drastically. In the exact 24-wave region, the phase of the diffracted wave changes further by doubling the values. The effect of the crystal thickness and the gap width on the reflectivity and transmissivity are also surveyed. The larger the reflectivity and the lower the transmissivity, the thicker is the crystal plate. The more the number of the resonance peaks, the wider is the gap width between the two plates. The time response curves of the cavity show a periodic structure of time due to the interference among the resonance peaks. In brief, we have established a theoretical approach to treat the multiple-wave diffraction in the Fabry-Perot type of resonant cavity. The calculation is in a good agreement with the observed one. The procedures for the dynamical calculations are also offered in this dissertation.
Kweon, Kyoung Eun 1981. "First principles study of point-like defects and impurities in silicon, carbon, and oxide materials." Thesis, 2012. http://hdl.handle.net/2152/23460.
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Yang, Ying-Jhe, and 楊英哲. "Calculation of Electron Mobility in Strained-Si/Ge Inversion Layer and Amorphous Silicon Based Thin Film Solar Cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/74854246595077284078.
Full text國立臺灣大學
電子工程學研究所
100
In this dissertation, two important topics are investigated and discussed for MOSFET (metal-oxide-semiconductor field-effect transistor) and photovoltaic technologies, respectively. One is the electron mobility calculation in the strained silicon or strained germanium inversion layers. The other is the performance improvement together with material and device characterization of amorphous silicon based solar cells. Part I: It is the goal for the CMOS (complementary metal-oxide-semiconductor) industry enabling large-scale decrease in chip area and improving transistor performance by scaling down the devices to give higher drive current and higher circuit speed. However, the device scaling down requires a complicated process improvement and high cost, especially when the approaching of the physical limits. Both the higher gate capacitance Cg and the higher carrier mobility μ can improve the drive current Id since Id ~ Cg∙μ. Thus, mobility enhancement offers an alternative way to further improve the drive current. Several various techniques such as substrate strain, process strain, and mechanical/package strain have been proposed to give strain into the silicon channel. In order to find out the optimal strain condition which gives highest electron mobility for silicon channels, the electron mobility in the silicon inversion layer is comprehensively studied for various substrate orientations, various channel directions, and various stress conditions. Furthermore, it was well known that bulk germanium (Ge) substrate offer 2x higher mobility for electrons and 4x higher mobility for holes as compared to Si. Thus, the strain induced electron mobility change in Ge channel inversion layer is also comprehensively studied. Part II: In recent years, the air pollution and global warming issues resulting from the mass consumption of fossil fuels have attracted more and more attention due to the aim for sustainability of the ecosystem on earth. The development of clean energy resources is thus an important challenge in these years. Among the wide variety of renewable energy, solar cells (also called photovoltaics, PV), which is pollution free in use and almost available everywhere in the world, is the most promising candidate. Although conventional crystalline silicon solar cells have higher efficiency, higher energy consumption during process and smaller substrate area give bottlenecks for this technique in the future from the ecological and economical point of view. Amorphous silicon based thin film solar cells, which can give large-scale applications and shorter energy pay-back time (EPBT), are the most commercially available thin film PV technology with abundant and non-toxic absorber material. However, the still limited stable efficiency has to be improved to compete with other PV technologies. In this dissertation, some material property and device structure are investigated to improve the initial and stable efficiency of a-Si based thin film solar cells.
Papi, Francesco. "Structural investigations on the adducts formed by natural and synthetic compounds with non-canonical DNA foldings." Doctoral thesis, 2018. http://hdl.handle.net/2158/1114320.
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