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Relevant bibliographies by topics / In-Plane nanowires

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Academic literature on the topic 'In-Plane nanowires'

Author: Grafiati

Published: 25 May 2024

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Journal articles on the topic "In-Plane nanowires"

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Belim, Sergey V., and Igor V. Bychkov. "Magnetic Properties of 2D Nanowire Arrays: Computer Simulations." Materials 16, no. 9 (2023): 3425. http://dx.doi.org/10.3390/ma16093425.

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The paper considers a nanowires 2D array located in the nodes of a square lattice. Computer simulations use the Heisenberg model and Metropolis algorithm. The array consists of small nanowires that are monodomain. The exchange interaction orders the spins within a single nanowire. Dipole–dipole forces act between neighboring nanowires. The shape of an individual nanowire affects its magnetic anisotropy. Computer simulations examine the phase transition temperature and magnetization behavior of the system. The type of magnetic moments ordering in the array of nanowires depends on the orientatio

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Castillo-Sepúlveda, Sebastián, Rosa M. Corona, Eduardo Saavedra, et al. "Nucleation and Stability of Toron Chains in Non-Centrosymmetric Magnetic Nanowires." Nanomaterials 13, no. 12 (2023): 1816. http://dx.doi.org/10.3390/nano13121816.

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This work analyzes the magnetic configurations of cylindrical nanowires with a bulk Dzyaloshinskii–Moriya interaction and easy-plane anisotropy. We show that this system allows the nucleation of a metastable toron chain even when no out-of-plane anisotropy exists in the nanowire’s top and bottom surfaces, as usually required. The number of nucleated torons depends on the nanowire length and the strength of an external magnetic field applied to the system. The size of each toron depends on the fundamental magnetic interactions and can be controlled by external stimuli, allowing the use of these

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Diao, Yu, Lei Liu, Sihao Xia, and Yike Kong. "Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method." International Journal of Modern Physics B 31, no. 12 (2017): 1750084. http://dx.doi.org/10.1142/s0217979217500849.

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To investigate the influences of dangling bonds on GaN nanowires surface, the differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires are researched through first-principles study. The GaN nanowires along the [0001] growth direction with diameters of 3.7, 7.5 and 9.5 Å are considered. According to the results, H-saturated GaN nanowires are more stable than the unsaturated ones. With increasing nanowire diameter, unsaturated GaN nanowires become more stable, while the stability of H-saturated GaN nanowires has little change. After geometry optimization, the at

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BERTNESS, KRIS, NORMAN SANFORD, JOHN SCHLAGER, et al. "CATALYST-FREE GAN NANOWIRES AS NANOSCALE LIGHT EMITTERS." International Journal of High Speed Electronics and Systems 21, no. 01 (2012): 1250003. http://dx.doi.org/10.1142/s0129156412500036.

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Catalyst-free growth of GaN nanowires with molecular beam epitaxy produces material of exceptionally high quality with long minority-carrier lifetimes and low surface recombination velocity. The nanowires grow by thermodynamic driving forces that enhance the sticking coefficient of incoming reagents to the end facets of the nanowire while inhibiting growth on the m-plane sidewalls. Photoluminescence (PL) studies confirm that the material is essentially free of detrimental chemical impurities and crystalline defects. The nanowires are readily excited to lasing with modest optical pump power. Re

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Дубровский, В. Г., та И. В. Штром. "Кинетика роста планарных нитевидных нанокристаллов". Письма в журнал технической физики 46, № 20 (2020): 15. http://dx.doi.org/10.21883/pjtf.2020.20.50149.18440.

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A kinetic equation is obtained which describes the elongation rate of planar semiconductor nanowires growing via the vapor-liquid-solid mechanism in the substrate plane. Theoretical analysis of different regimes depending on the nanowire radius and epitaxial conditions shows that planar growth of nanowires can be limited by either the Gibbs-Thomson effect in a catalyst droplet (for small droplet size) or surface diffusion of adatoms (for larger nanowire radii. Diffusion-like dependence of the growth rate on the nanowire radius R has the form R^(-m), where the power exponent equal 1, 3/2 or 2 d

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Zou, J., and X. F. Li. "Effect of the Casimir Force on Buckling of a Double-Nanowire System with Surface Effects." International Journal of Structural Stability and Dynamics 18, no. 10 (2018): 1850118. http://dx.doi.org/10.1142/s0219455418501183.

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Structural stability of a double-nanowire system with surface effects subjected to axial compressive forces is analyzed. Taking into account the Casimir force between the two nanowires, two coupled governing equations for buckling of a double-nanowire system are derived. For four typical end supports including simply-supported, clamped, cantilevered, and clamped-pinned double-nanowire systems, the characteristic equations are derived and the critical loads are determined for the out-of-phase in-plane buckling. Numerical results indicate that positive surface elasticity enhances the load-carryi

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Hong, Ie-Hong, and Sheng-Wen Liu. "Observation of the Magnetization Reorientation in Self-Assembled Metallic Fe-Silicide Nanowires at Room Temperature by Spin-Polarized Scanning Tunneling Spectromicroscopy." Coatings 9, no. 5 (2019): 314. http://dx.doi.org/10.3390/coatings9050314.

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The quasi-periodic magnetic domains in metallic Fe-silicide nanowires self-assembled on the Si(110)-16 × 2 surface have been observed at room temperature by direct imaging of both the topographic and magnetic structures using spin-polarized scanning tunneling microscopy/spectroscopy. The spin-polarized differential conductance (dI/dV) map of the rectangular-sectional Fe-silicide nanowire with a width and height larger than 36 and 4 nm, respectively, clearly shows an array of almost parallel streak domains that alternate an enhanced (reduced) density of states over in-plane (out-of-plane) magne

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Zhao, S., L. Clime, K. Chan, et al. "Statistical Study of Effective Anisotropy Field in Ordered Ferromagnetic Nanowire Arrays." Journal of Nanoscience and Nanotechnology 7, no. 1 (2007): 381–86. http://dx.doi.org/10.1166/jnn.2007.18039.

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Soft ferromagnetic nanowire arrays were obtained by electrodeposition of Co–Fe–P alloy into the pores of high quality home-made anodized aluminum oxide (AAO) templates. Bath acidity and current density were the two parameters used in order to tailor the orientation of local anisotropy axes in individual nanowires. In order to quantify the influence of the induced anisotropies on the magnetization processes in individual nanowires, the in-plane magnetization loops of the arrays are modeled as log-normal distributions of Stoner-Wohlfarth transverse magnetization processes. Using the lognormal me

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Wang, Jingchun, Floriano Cuccureddu, Rafael Ramos, Cormac Ó. Coileáin, Igor V. Shvets, and Han-Chun Wu. "Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires." SPIN 09, no. 01 (2019): 1950004. http://dx.doi.org/10.1142/s2010324719500048.

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We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on [Formula: see text]-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

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Giraldo-Daza, Helver Augusto, José Darío Agudelo-Giraldo, César Leandro Londoño-Calderón, and Henry Reyes-Pineda. "Structural Disorder of CuO, ZnO, and CuO/ZnO Nanowires and Their Effect on Thermal Conductivity." Crystals 13, no. 6 (2023): 953. http://dx.doi.org/10.3390/cryst13060953.

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In this work, the structural defects and the thermal conductivity of CuO, ZnO, and CuO/ZnO nanowires have been studied, using molecular dynamics simulation with COMB3 potential. The initial parameters and atoms positions were taken from reports of bulk materials with tenorite and wurtzite structures, respectively. Nanowires were grown along the c-axis, as observed experimentally. The results confirm the defects apparition in the systems after simulation with a formation of grains to reduce the energy of the nanowires. In the CuO nanowires case, the lack of periodicity in the basal plane causes

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Dissertations / Theses on the topic "In-Plane nanowires"

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Fan, Zheng. "Study of in-plane silicon nanowires obtained via a solid-liquid-solid growth process and their self-organization for electronic applications." Palaiseau, Ecole polytechnique, 2015. http://www.theses.fr/2015EPXX0117.

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Khelifi, Wijden. "Selective Growth and Characterization of InAs and InSb Nanostructures." Electronic Thesis or Diss., Université de Lille (2022-....), 2024. http://www.theses.fr/2024ULILN001.

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Les composés d'arséniure et d'antimoniure d'indium figurent parmi les candidats les plus prometteurs pour la conception de dispositifs quantiques, grâce à leurs propriétés électroniques supérieures telles que la haute mobilité des électrons et leur fort couplage spin-orbite. Cependant, leur déploiement est souvent entravé par le désaccord de maille qu'ils possèdent avec les substrats III-V conventionnels et qui les rend défectueux. Cette thèse propose une solution pour fabriquer des nanostructures d'InAs et d'InSb de bonne qualité, grâce à une croissance sélective par épitaxie par jets molécul

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Dias, Mariama Rebello de Sousa. "Transport phenomena in quasi-one-dimensional heterostructures." Universidade Federal de São Carlos, 2014. https://repositorio.ufscar.br/handle/ufscar/4973.

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Made available in DSpace on 2016-06-02T20:15:31Z (GMT). No. of bitstreams: 1 5844.pdf: 11430873 bytes, checksum: b80a5790a9ebf6ae63ff48e52968ae60 (MD5) Previous issue date: 2014-02-21<br>Universidade Federal de Sao Carlos<br>O crescimento e caracterização de sistemas de heteroestruturas semicondutoras quasi-unidimensionais têm atraído grande interesse devido à sua potencial de aplicação tecnológica, como foto-detectores, dispositivos opto-eletrônicos assim como seu para o processamento de informação quântica e aplicações em fotônica. O objetivo desta tese é o estudo das propriedades de trans

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Vineeth, Mohanan P. "Spin Hall Effect Mediated Current Induced Magnetization Reversal in Perpendicularly Magnetized Pt/Co/Pt Based Systems." Thesis, 2016. http://etd.iisc.ac.in/handle/2005/3078.

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In the present thesis, magnetization reversal in both out-of-plane and in-plane magnetized thin lms and in devices fabricated out of those lms are explored. Pt/Co/Pt stacks with ultrathin Co layer were in-estimated initially for understanding their magnetic properties in this thesis. These perpendicular magnetized systems are good candidates for magnetic hard disc drives due to their large anisotropy, which may allow miniaturization of magnetic data storage devices. The spin Hall e ect mediated current-induced magnetization reversal in patterned Pt/Co/Pt devices were extensively investigated.

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Vineeth, Mohanan P. "Spin Hall Effect Mediated Current Induced Magnetization Reversal in Perpendicularly Magnetized Pt/Co/Pt Based Systems." Thesis, 2016. http://hdl.handle.net/2005/3078.

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In the present thesis, magnetization reversal in both out-of-plane and in-plane magnetized thin lms and in devices fabricated out of those lms are explored. Pt/Co/Pt stacks with ultrathin Co layer were in-estimated initially for understanding their magnetic properties in this thesis. These perpendicular magnetized systems are good candidates for magnetic hard disc drives due to their large anisotropy, which may allow miniaturization of magnetic data storage devices. The spin Hall e ect mediated current-induced magnetization reversal in patterned Pt/Co/Pt devices were extensively investigated.

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Book chapters on the topic "In-Plane nanowires"

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Ajmal Khan, M., and Yasuaki Ishikawa. "Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the Vapor–Liquid–Solid (VLS) Mode for Nanoscale Device Applications." In Nanowires - Recent Progress. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97723.

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Stacking fault free and planar defects (twin plane) free catalyzed Si nanowires (Si NWs) is essential for the carrier transport in the nanoscale devices applications. In this chapter, In-catalyzed, vertically aligned and cone-shaped Si NWs arrays were grown by using vapor–liquid–solid (VLS) mode on Si (111) substrates. We have successfully controlled the verticality and (111)-orientation of Si NWs as well as scaled down the diameter to 18 nm. The density of Si NWs was also enhanced from 2.5 μm−2 to 70 μm−2. Such vertically aligned, (111)-oriented p-type Si NWs are very important for the nanoscale device applications including Si NWs/c-Si tandem solar cells and p-Si NWs/n-InGaZnO Heterojunction LEDs. Next, the influence of substrate growth temperature (TS), cooling rate (∆TS/∆𝑡) on the formation of planar defects, twining along [112] direction and stacking fault in Si NWs perpendicular to (111)-orientation were deeply investigated. Finally, one simple model was proposed to explain the formation of stacking fault, twining of planar defects in perpendicular direction to the axial growth direction of Si NWs. When the TS was decreased from 600°C with the cooling rate of 100°C/240 sec to room temperature (RT) after Si NWs growth then the twin planar defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed.

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Harris, Nadine, Logan K. Ausman, Jeffrey M. McMahon, David J. Masiello, and George C. Schatz. "Computational Electrodynamics Methods." In Computational Nanoscience. The Royal Society of Chemistry, 2011. http://dx.doi.org/10.1039/bk9781849731331-00147.

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This chapter has focused on a number of commonly used analytical and numerical electrodynamics methods that can be used to model the optical properties of plasmonic nanostructures, with emphasis on nonconventional applications of these methods to problems that have been recently been of interest in the surface spectroscopy field, especially surface-enhanced Raman scattering (SERS). A dipole reradiation (DR) methodology was added to the analytical approach of Mie theory to DR effects in SERS intensities, which is a more accurate expression for the electromagnetic enhancement theory than the commonly used plane-wave (PW) enhancement expression. We show that DR/PW differences can be significant for certain choices of detector locations due to interference and multipole effects, and generally the DR enhancements are smaller than PW. The numerical 2D finite-difference time-domain (FDTD) method was modified through the incorporation of the hydrodynamic Drude model dielectric constant, enabling the calculation of spatially nonlocal dielectric responses for arbitrarily shaped nanostructures. Nonlocal effects become important when structural features extend below around 10 nm where the dielectric constant becomes a function of both the wavevector and the frequency. The importance of including nonlocal effects was demonstrated by calculating the optical response of cylindrical and triangular nanowires. The discrete dipole approximation (DDA) provides an alternative method for determining nanoparticle optical properties that uses a similar grid to FDTD, but with different convergence characteristics. We show that for cube-shaped particles the two methods have similar convergence behavior, but accuracy is a problem for DDA, while representing the frequency dependence dielectric constant is a problem for FDTD. A general many-body formalism describing plasmon-enhanced linear spectroscopies was developed by linking the numerical DDA method with electronic structure theory based on Q-Chem. This methodology allows the calculation of the linear-response and scattering properties between a molecule, which is described quantum mechanically, interacting with a classically described metal nanostructure. To demonstrate this formalism the linear response and scattering of a pyridine–Ag spheroidal system was calculated as a function of excitation energy and aspect ratio.

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Conference papers on the topic "In-Plane nanowires"

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Malakooti, Mohammad H., Hyun-Sik Hwang, and Henry A. Sodano. "Vibration Damping Enhancement in Hybrid Carbon Fiber Composites With Zinc Oxide Nanowire Interphase." In ASME 2014 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/smasis2014-7451.

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Traditional composite materials invented to be used in structures with the purpose of high load-bearing with excellent in-plane properties. Continuous fiber reinforced composites are one of the mostly used categories of advanced composites. This class of composites has gained a lot of attention due to their light-weight and decent mechanical properties. However, additional material design is required to tune both mechanical and structural properties of these composites. Since the load transfer between reinforcement phase and polymer matrix happens at the interfacial region, a better interphase

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Zhang, Lichao, Xiujie Dou, Changjun Min, Yuquan Zhang, and Xiaocong Yuan. "In-plane trapping and manipulation of ZnO nanowires on a metallic surface." In CLEO: Applications and Technology. OSA, 2016. http://dx.doi.org/10.1364/cleo_at.2016.jw2a.90.

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Terris, Damian, Karl Joulain, and Denis Lemonnier. "Heat Pulse Propagation in Silicon Nanostructures by Solving Phonon Transport Equation." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52220.

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The temperature evolution prediction of silicon nanofilms and nanowires can be useful to safeguard high technology systems of its deterioration. The simulation of a level and a pulse in these nanostructures is then made with Boltzmann Transport Equation (BTE) resolution using the single time approximation. The Discrete Ordinate (DO) method helps to numerate the angle space. BTE is written in cylindrical coordinates which corresponds to wires. Therefore, the cylindrical plane is considered as an isotropic scattering to mimic a nanowire and then, as a specular reflexion (which conserve z momentu

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Fortuna, Seth A., Jianguo Wen, and Xiuling Li. "MOCVD Grown III–V Nanowires: In-Plane, self-aligned and transfer-printable." In LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008). IEEE, 2008. http://dx.doi.org/10.1109/leos.2008.4688674.

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Yin, Han, Xiaoxiang Wu, Jun Xu, Kunji Chen, and Linwei Yu. "Deterministic deployment of in-plane silicon nanowires for high performance large area electronics." In 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA). IEEE, 2018. http://dx.doi.org/10.1109/cicta.2018.8706060.

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Crouse, Michael M., Thomas L. James, and David Crouse. "Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays." In Optical Engineering + Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.795399.

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Katsuro, Sae, Weifang Lu, Naoki Sone, et al. "Suppression of c-plane emission in GaInN/GaN multiquantum shells/nanowires for efficient LEDs." In Gallium Nitride Materials and Devices XVII, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2022. http://dx.doi.org/10.1117/12.2608186.

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Saha, Sourabh K., John J. LaColla, and Martin L. Culpepper. "An Automated Stage for Scalable Imprinting of DNA Nanowires Based on a Self-Aligning Technique." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87065.

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Molecular combing is an established technique for aligning DNA nanowires on a surface. When performed on micro-patterned surfaces, this technique can be used to reliably align and stretch DNA nanowires across micro pillars. Imprinting of these aligned DNA nanowires is an affordable technique for fabrication of arrays of nano-scale channels across micro-scale reservoirs. In the past, DNA combing and imprinting (DCI) have been performed manually to fabricate polymer chips that are used in biomedical applications such as gene therapy and drug delivery studies. Automation of the DCI process is nec

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Mavrokefalos, Anastassios, Ngoc T. Nguyen, Michael T. Pettes, David C. Johnson, and Li Shi. "In-Plane Thermal and Thermoelectric Properties of Polycrystalline Highly Preferred Orientation [(W)x(WSE2)y]z Superlattice Thin Films." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32841.

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It was recently found by using the time domain thermal reflectance method that polycrystalline highly preferred orientation WSe2 and [(W)x(WSe2)y]z superlattice films possess extremely low cross-plane thermal conductivity, which is desirable for thermal insulation and thermoelectric energy conversion applications. However, it is difficult to obtain the in-plane thermal conductivity by using the laser reflectance or the 3-ω method. Here we employ a suspended microdevice developed for measuring thermoelectric properties of individual nanowires and nanofilms to obtain the in-plane thermal conduct

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Katsuro, Sae, Weifang Lu, Nanami Nakayama, et al. "Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs." In Gallium Nitride Materials and Devices XVIII, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2023. http://dx.doi.org/10.1117/12.2646906.

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