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Journal articles on the topic 'Impurity doping'

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Author: Grafiati

Published: 9 March 2023

Last updated: 10 March 2023

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1

Park, Kwan Ho, Jae Yong Jung, Jung Il Lee, Kyung Wook Jang, Whan Gi Kim, and Il Ho Kim. "Synthesis and Electronic Transport Properties of Sn-Doped CoSb₃." Materials Science Forum 658 (July 2010): 21–24. http://dx.doi.org/10.4028/www.scientific.net/msf.658.21.

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Sn-doped CoSb3 skutterudites were prepared by encapsulated induction melting and their electronic transport properties were examined. The Sn dopant generated excess charge carriers, which increased in concentration with increasing Sn doping content. However, the carrier mobility decreased with increasing doping content, indicating a decrease in the hole mean free path by impurity scattering. The Seebeck coefficient decreased and the electrical resistivity decreased slightly with increasing the carrier concentration due to the reduced carrier mobility by impurity scattering. The lattice thermal conductivity was dominant in the Sn-doped CoSb3 skutterudites.

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2

Zeng, Jieqiong, and Hong Yu. "A First-Principle Study of B- and P-Doped Silicon Quantum Dots." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/147169.

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Doping of silicon quantum dots (Si QDs) is important for realizing the potential applications of Si QDs in the fields of Si QDs-based all-Si tandem solar cells, thin-film transistors, and optoelectronic devices. Based on the first-principle calculations, structural and electronic properties of hydrogen terminated Si QDs doped with single Boron (B) or phosphorus (P) are investigated. It is found out that the structural distortion induced by impurity doping is related to the impurity characteristic, impurity position, and the QD size according to the structural analysis. The relative energetic stability of Si QDs with a single impurity in different locations has been discussed, too Furthermore, our calculations of the band structure and electronic densities of state (DOS) associated with the considered Si QDs show that impurity doping will introduce impurity states within the energy gap, and spin split occurs for some configurations. A detailed analysis of the influences of impurity position and QD size on the impurity levels has been made, too.

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3

Fukata, Naoki. "Impurity Doping in Silicon Nanowires." Advanced Materials 21, no. 27 (May 18, 2009): 2829–32. http://dx.doi.org/10.1002/adma.200900376.

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4

Li, Lei, Ruixiang Hou, Lili Zhang, Yihang Chen, L. Yao, Nongnong Ma, Youqin He, Xiao Chen, Wanjin Xu, and G. G. Qin. "Ultra-Shallow Doping of GaAs with Mg, Cr, Mn and B Using Plasma Stimulated Room-Temperature Diffusion." Journal of Nanoscience and Nanotechnology 20, no. 3 (March 1, 2020): 1878–83. http://dx.doi.org/10.1166/jnn.2020.17162.

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It is demonstrated that Mg, Cr, Mn and B can be doped close to GaAs surface by plasma doping without external bias at room temperature (RT). The process only takes a few minutes, and impurity densities in the range of 1018–1021/cm3 can be achieved with doping depths about twenty nanometers. The experiment results are analyzed and the physical mechanism is tentatively explained as follows: during the doping process, impurity ion implantation under plasma sheath voltage takes place, simultaneously, plasma stimulates RT diffusion of impurity atom, which plays the main role in the doping process. The enhanced RT diffusion coefficients of Mg, Cr, Mn and B in GaAs are all in the order of magnitude of 10-15 cm2sec-1. This is reported for the first time among all kinds of plasma assisted doping methods.

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5

YOGAMALAR, N. RAJESWARI, M. ASHOK, and A. CHANDRA BOSE. "BLUE EMISSION AND BANDGAP MODIFICATION IN N:ZnO NANORODS." Functional Materials Letters 04, no. 03 (September 2011): 271–75. http://dx.doi.org/10.1142/s1793604711002007.

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Nanorods of nitrogen-doped ZnO (N:ZnO) are grown by hydrothermal chemical precipitation method. The average crystallite size, surface morphology, and particle size distribution are estimated and characterized from powder X-ray diffractometer (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), respectively. The characteristic vibration mode of metal-oxide is confirmed from Fourier transform infrared spectroscopy (FT-IR) study. The absorption spectra of N:ZnO in the ultraviolet visible (UV-vis) region and their variations are recorded as a function of dopant concentration. The Tauc plot elucidates that the bandgap of N:ZnO increases up to 6 atomic percent (at.%) of dopant concentration and then decreases for heavy doping. The widening and narrowing in bandgap is interpreted in terms of impurity induced absorption edge shift due to N doping. Photoluminescence (PL) spectra revealed the existence of visible band, arising from impurity related defects.

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6

König, Dirk, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, et al. "Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating." Beilstein Journal of Nanotechnology 9 (August 23, 2018): 2255–64. http://dx.doi.org/10.3762/bjnano.9.210.

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Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.

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7

Wang, Yu, Yuan Peng Shou, and Yu Qiu. "Light Doping Effect on System Energy in Conjugated Polymers." Advanced Materials Research 590 (November 2012): 79–86. http://dx.doi.org/10.4028/www.scientific.net/amr.590.79.

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Based on a tight binding model, we investigate impurity effect upon the stability of neutral and negatively or positively charged 1D conjugated polymer chains. Impurities are introduced by an attractive or a repulsive potential located at the lattice sites. The offsets of system energy due to light doping are calculated within adiabatic approximation. We show that doping position has significant impact upon system stability. A general picture of impurity distribution along the stretch direction of the polymer chain is obtained for both attractive and repulsive impurity potentials in neutral as well as in charged conjugated polymers. A polymer chain can generally be divided into edge, center and transition regions in terms of impurity distribution. It is found the static impurity distribution within a polymer is dominated by the strength and the sign of the impurity potential as well as whether the polymer chain is neutral or charged. Impurity distribution within the edge and the transition region is characterized by cluster and that within the center region by separation.

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8

SHARMA, T. P., R. KUMAR, G. JAIN, and S. K. SHARMA. "STUDY OF Cu DOPING ON PbS THIN FILMS." Modern Physics Letters B 03, no. 11 (July 20, 1989): 825–28. http://dx.doi.org/10.1142/s0217984989001308.

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Lead sulphide thin films have been deposited by conventional chemical bath technique. The effect of Cu doping is studied on the resistivity and the band gap of these films. An anamolous behavior is obtained in the case of variation of band gap with impurity (mol%) which shows that certain values of impurity have prominent features. While the resistivity decreases first with the increase in impurity, after a particular value the resistivity adopts a rising trend, and on still higher doping the decreased resistivity again starts to take place.

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9

Lawlor, James A., and Mauro S. Ferreira. "Sublattice asymmetry of impurity doping in graphene: A review." Beilstein Journal of Nanotechnology 5 (August 5, 2014): 1210–17. http://dx.doi.org/10.3762/bjnano.5.133.

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In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.

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10

FONG, C. Y., and L. H. YANG. "POSSIBLE DOPING MECHANISM IN a-Si:H—THE IMPURITY-DEFECT COMPLEX MODEL." Modern Physics Letters B 06, no. 05 (February 28, 1992): 235–43. http://dx.doi.org/10.1142/s0217984992000314.

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The present status of understanding the doping mechanism in hydrogenated amorphous silicon was reviewed. In particular, we focused on a possible final state of the doping process — the impurity-defect complex. Both theoretical and experimental evidences favor the formation of the impurity-defect complex. However, the microscopic process of forming this final state is still controversial.

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11

Barraud, S., P. Dollfus, S. Galdin, R. Rengel, M. J. Martin, and J. E. Velázquez. "An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution." VLSI Design 13, no. 1-4 (January 1, 2001): 399–404. http://dx.doi.org/10.1155/2001/96951.

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An improved 3-D Monte Carlo simulation model is developed to treat the discrete random dopant distribution in sub-0.1 μm MOSFET. The new atomistic model is based on a scattering rate calculation and an algorithm that take into account many-body effects and the local variations of screening length according to impurity distribution and bias conditions.To validate this new approach low field electron drift mobility and diffusion coefficient have been computed using simulation of 3D bars for 1015–1018 cm–3 range of average doping concentration. A good agreement is found between calculation and experimental mobility data at 300 K.

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12

Ido, T., and H. Goto. "The Impurity Doping in Widegap Semiconductors." Solid State Phenomena 55 (August 1997): 159–63. http://dx.doi.org/10.4028/www.scientific.net/ssp.55.159.

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13

Kajihara, S. A., A. Antonelli, and J. Bernholc. "Impurity incorporation and doping of diamond." Physica B: Condensed Matter 185, no. 1-4 (April 1993): 144–49. http://dx.doi.org/10.1016/0921-4526(93)90228-x.

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14

Sahu, Ayaskanta, Moon Sung Kang, Alexander Kompch, Christian Notthoff, Andrew W. Wills, Donna Deng, Markus Winterer, C. Daniel Frisbie, and David J. Norris. "Electronic Impurity Doping in CdSe Nanocrystals." Nano Letters 12, no. 5 (April 30, 2012): 2587–94. http://dx.doi.org/10.1021/nl300880g.

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15

Moraru, Daniel, Arup Samanta, Takahiro Tsutaya, Yuki Takasu, Takeshi Mizuno, and Michiharu Tabe. "Tunneling Transport in Quantum Dots Formed by Coupled Dopant Atoms." Advanced Materials Research 1117 (July 2015): 78–81. http://dx.doi.org/10.4028/www.scientific.net/amr.1117.78.

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In silicon nanoscale transistors, dopant (impurity) atoms can significantly affect transport characteristics, in particular at low temperatures. Coupling of neighboring dopants in such devices is essential in defining the properties for transport. In this work, we briefly present a comparison of different regimes of inter-dopant coupling, controlled by doping concentration and, to some extent, by selective, local doping. Tunneling-transport spectroscopy can reveal the energy spectrum of isolated dopants and of strongly-coupled dopant atoms. Interactions of multiple-dopants quantum dots (QDs) and satellite individual dopant-traps, as observed in some devices, can provide further information to bridge such inter-dopant coupling regimes for more advanced applications.

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16

Wang, Bao Zhu, Sheng Tang, Tong Wei, Jie Ren, and Min Wang. "First-Principles Study of 3D Transition Metal Doped Single-Layer Graphene." Materials Science Forum 984 (April 2020): 82–87. http://dx.doi.org/10.4028/www.scientific.net/msf.984.82.

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The electronic structure and magnetic properties of C atoms in Co, Ni-substituted graphene single-layers were studied by first-principles calculation method based on density functional theory. The study found that the pure graphene single-layer is an insulator, does not have magnetism, and we found that the doping of Co and Ni atoms alone does not make the system magnetic. Both Co and Ni atoms are capable of generating impurity levels in the graphene single-layer system. The impurity level of Co atom doping is 0.75 eV below the Fermi level, and the impurity level of Ni atom doping is 0.4 eV above the Fermi level. Studies on the coupling doping of Co and Ni atoms show that two different distance Co atoms or Ni atoms in the graphene single-layer are not always ferromagnetically coupled, and a stable magnetic ground state cannot be obtained. It can produce different magnetic ground states by controlling different doping distances, thus we provide one new way to control the spin properties.

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17

WL Chin, Vincent, and Stephen M Newbury. "Determination of Barrier Height and Doping Density of a Schottky Diode from Infrared Photoresponse Measurements." Australian Journal of Physics 45, no. 6 (1992): 781. http://dx.doi.org/10.1071/ph920781.

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The impurity doping concentration of a semiconductor is commonly determined by measuring the C-V profile of a Schottky diode. In this work, an alternative method is utilised to determine the impurity doping density of a moderately acceptor-doped Schottky diode using infrared photoelectric measurements. Due to the image lowering effect, the barrier is lowered with the increasing field or reverse bias. Having determined the relationship between the reverse bias and the lowered barrier, the doping density and the zero bias barrier eight from the infrared photo response measurements can be accurately determined.

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18

Gnatyuk, Volodymyr A., Sergiy N. Levytskyi, Oleksandr I. Vlasenko, and Toru Aoki. "Laser-Induced Doping of CdTe Crystals in Different Environments." Advanced Materials Research 222 (April 2011): 32–35. http://dx.doi.org/10.4028/www.scientific.net/amr.222.32.

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Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.

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19

Malinovskaya, Tatyana D., Victor I. Sachkov, Valentina V. Zhek, and Roman A. Nefedov. "Method for Determining the Doping Efficiency of Dispersed Semiconductor Metal Oxide Materials." Key Engineering Materials 683 (February 2016): 389–94. http://dx.doi.org/10.4028/www.scientific.net/kem.683.389.

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In this paper, a method for determining the doping efficiency of dispersed semiconductor metal oxide materials is proposed proposing to use the dependences of the free charge carrier concentration, normalized to the concentration of the doping impurity (Ne spec.), on the content of this impurity. The possibilities of this method are demonstrated by the example of studying the effect of technological factors on the efficiency of doping of indium oxide with tin and doping of tin oxide with antimony. It is shown that it is impossible to achieve the concentration of free charge carriers in the ITO material, higher than that in ATO materials, due to the lower solubility of tin in the In2O3 lattice, as compared with the solubility of antimony in the SnO2 lattice.

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20

Zhang, Sui-Shuan, Zong-Yan Zhao, and Pei-Zhi Yang. "Analysis of electronic structure and optical properties of N-doped SiO2 based on DFT calculations." Modern Physics Letters B 29, no. 19 (July 20, 2015): 1550100. http://dx.doi.org/10.1142/s0217984915501006.

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The crystal structure, electronic structure and optical properties of N-doped [Formula: see text] with different N impurity concentrations were calculated by density function theory within GGA[Formula: see text]+[Formula: see text]U method. The crystal distortion, impurity formation energy, band gap, band width and optical parameter of N-doped [Formula: see text] are closely related with N impurity concentration. Based on the calculated results, there are three new impurity energy levels emerging in the band gap of N-doped [Formula: see text], which determine the electronic structure and optical properties. The variations of optical properties induced by N doping are predominately determined by the unsaturated impurity states, which are more obvious at higher N impurity concentration. In addition, all the doping effects of N in both [Formula: see text]-quartz [Formula: see text] and [Formula: see text]-quartz [Formula: see text] are very similar. According to these findings, one could understand the relationship between nitrogen concentration and optical parameter of [Formula: see text] materials, and design new optoelectrionic Si–O–N compounds.

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21

XU, ZHU-AN, GUANGHAN CAO, and YUKE LI. "EFFECT OF ZINC IMPURITY AND ITS IMPLICATION TO THE PAIRING SYMMETRY IN IRON-BASED SUPERCONDUCTORS." Modern Physics Letters B 26, no. 20 (July 5, 2012): 1230012. http://dx.doi.org/10.1142/s0217984912300128.

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The effect of nonmagnetic Zn impurity on superconductivity in iron-based superconductors is reviewed. Zn impurity can severely suppress the antiferromagnetic (AFM) order of Fe ions in the parent compound LaFeAsO . In the 1111 type F-doped LaFeAs ( O , F ) system, the superconducting transition temperature (Tc) increases in the underdoped regime, remains unchanged in the optimally-doped regime, and is severely suppressed in the overdoped regime in the presence of Zn impurity. The results suggest a switch of the symmetry of the superconducting order parameters from a s-wave to s±- or d-wave states as the charge carrier doping increases in this system. To our surprise, Zn impurity strongly suppresses Tc in the Co -doped LaFeAsO and BaFe 2 As 2 systems despite of the Co doping level. The absence of universal Zn impurity effect implies that the pairing symmetry of the iron-based superconductors may be dependent on the details of the electronic structure.

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22

Chen, Chang Peng, and Mei Lan Qi. "Electronic Structure and Optical Properties of La or In Doped SnO₂: First-Principles Calculations." Advanced Materials Research 393-395 (November 2011): 80–83. http://dx.doi.org/10.4028/www.scientific.net/amr.393-395.80.

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Based on the density functional method, the electronic structures and the optical properties for pure and La or In doped SnO2 are comparatively investigated in detail. The calculation results indicate that both the doping of La and the doping of In induce effective reduction of the band gap of SnO2, the impurity elements form new highly localized impurity energy level at the top of the valence band near the Fermi level. The interaction between electrons changed after doping which leads to the change of electrical properties .Meanwhile, red shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change of band gaps

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23

MORADIAN, ROSTAM, and ALI FATHALIAN. "MAGNETIC IMPURITY EFFECTS IN ZIGZAG CARBON NANOTUBES." International Journal of Nanoscience 06, no. 06 (December 2007): 453–59. http://dx.doi.org/10.1142/s0219581x07005036.

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We investigate effects of magnetic impurity doping on the Curie critical temperature (Tc) of semiconducting carbon nanotubes. Variation of Tc as a function of impurity concentration for different coupling constant (J), and spin value (S) are calculated. We found by increasing J and S, the critical temperature is increased. Also we calculated Tc in terms of band filling for different impurity concentration, exchange coupling and impurity spin magnitude.

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24

Tang, Jin Long, Jun Nan Zhong, and Cai Wen. "Effects of n-Type Dopants on Electronic Properties in 4H-SiC." Key Engineering Materials 645-646 (May 2015): 325–29. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.325.

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Based on first-principles calculations, we have investigated atomic and electronic structures of 4H-SiC crystal doped by N, P and As elements as n-type dopants. We have obtained the bond lengths of the optimization system, as well as the impurity levels, the band structure and the density of states. The results show that the higher impurity level above the Fermi level is observed when 4H-SiC doped by N with concentration as 6.25% in these dopants, and the band gap of 4H-SiC decreases while the doping concentration or the atomic number of dopant increases.

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25

MA, XIYING, and JINWEI SONG. "AN INVESTIGATION OF THE DOPING PROPERTIES OF ZnSe NANOCRYSTALS." International Journal of Modern Physics B 25, no. 27 (October 30, 2011): 3655–62. http://dx.doi.org/10.1142/s0217979211101752.

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This paper investigates the properties of ZnSe nanocrystals doped with single N , P or As atoms (for p-type doping) or single F , Cl or Br atoms (for n-type doping). The crystals are simulated using the local density functional method. Structures doped with an N or Cl atom remained symmetrical, but some distortion appeared with the other dopants. We found that N is the most efficient acceptor impurity for p-type doping, while Cl is the most suitable impurity for n-type doping. In the case of heavy p-type doping, complex defects such as N Se – Zn – V Se and N Se – Zn int easily form in the structure. We found that N Se – Zn – V Se produces a deep acceptor level in the bandgap, while N Se – Zn int produces a compensating donor level in p-type doping. The latter is the main reason for that p-type ZnSe is difficult to achieve. This study is useful to researchers investigating p- and n-type doping as well as device manufacturers.

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26

Nitsuk, Yu A., O. V. Karaush, Ya I. Lepikh, Yu F. Vaksman, and G. V. Korenkova. "LUMINESCENCE OF COLLOIDAL CdSe:Cu NANOCRYSTALS." Sensor Electronics and Microsystem Technologies 19, no. 4 (January 23, 2023): 23–29. http://dx.doi.org/10.18524/1815-7459.2022.4.271202.

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The luminescence of Colloidal CdSe:Cu nanocrystals was studied. It is shown that copper doping does not lead to a noticeable change in the size of nanocrystallites. The change in the band gap width can be explained by the inter- impurity Coulomb interaction. It is shown that copper doping leads to quenching of exciton luminescence of CdSe. It is established that the long-wave luminescence of CdSe:Cu is caused by transitions within the donor- acceptor pairs, which include intrinsic and impurity Cu defects.

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27

Singh, R. K., Dinesh Varshney, V. Dubey, and N. K. Gaur. "Effect of Impurity Doping onTcof 123 Superconductors." Japanese Journal of Applied Physics 32, S3 (January 1, 1993): 346. http://dx.doi.org/10.7567/jjaps.32s3.346.

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28

Marfaing, Y. "Impurity doping and compensation mechanisms in CdTe." Thin Solid Films 387, no. 1-2 (May 2001): 123–28. http://dx.doi.org/10.1016/s0040-6090(00)01717-x.

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29

Winer, K., R. A. Street, N. M. Johnson, and J. Walker. "Impurity incorporation and doping efficiency ina-Si:H." Physical Review B 42, no. 5 (August 15, 1990): 3120–28. http://dx.doi.org/10.1103/physrevb.42.3120.

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30

Jin, Hyungyu, Bartlomiej Wiendlocha, and Joseph P. Heremans. "P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids." Energy & Environmental Science 8, no. 7 (2015): 2027–40. http://dx.doi.org/10.1039/c5ee01309g.

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31

Udal, Andres, and Enn Velmre. "Numerical Investigation of SiC Devices Performance Considering the Incomplete Dopant Ionization." Materials Science Forum 527-529 (October 2006): 1383–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1383.

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The temperature-dependences of ionized dopant concentration at different doping levels are generalized and the preconditions for thermal instabilities due to self-heating are studied. The nonisothermal simulations of forward-biased SiC structures over a wide temperature range are performed by using the drift-diffusion 1D-simulator DYNAMIT. Results show that the incomplete doping ionization will be an important effect if impurity activation energies exceed 0.1, 0.2 and 0.3 eV for doping levels 1019, 1018 and 1017cm−3, respectively. For appearance of S-shaped selfheated I/V curves the respective values must exceed 0.2, 0.3 and 0.4 eV. Strong influence of incomplete dopant ionization on forward I/V curves of realistic 4H-SiC and 6H-SiC p-i-n structures is predicted by simulations. At that the dominating role of the thick substrate layer is shown.

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32

Исмайлов, К. А., З. Т. Кенжаев, С. В. Ковешников, Е. Ж. Косбергенов, and Б. К. Исмайлов. "Радиационная стойкость кремниевых солнечных элементов, легированных никелем." Физика твердого тела 64, no. 5 (2022): 519. http://dx.doi.org/10.21883/ftt.2022.05.52330.253.

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The influence of nickel doping on the radiation resistance of silicon solar cells in the range of γ-irradiation doses of 10^5–10^8 rad was studied. It is shown that diffusion doping of silicon with impurity nickel atoms increases the radiation resistance of the parameters of silicon solar cells. It is assumed that the reason for the increase in the radiation resistance of such solar cells is the existence of clusters of impurity nickel atoms, which serve as sinks for radiation defects.

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33

ZHANG, ZHIGANG, and DONGFENG XUE. "LOCAL LATTICE STRUCTURE AND DOPANT OCCUPANCY OF DOPED LITHIUM NIOBATE CRYSTALS." Modern Physics Letters B 23, no. 31n32 (December 30, 2009): 3687–94. http://dx.doi.org/10.1142/s0217984909022095.

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We present a systematic study of the local distortions produced upon doping metal ions to lithium niobate ( LiNbO 3, LN) single crystals. The impurity bond length can be predicted by a radial force constant model, when the dopant ions substitute for Li + or Nb 5+ ions in the LN crystallographic frame. From the viewpoint of constituent chemical bonds, the lattice energy can be described as the function of bond valence on the basis of Born–Haber cycle for the formation of an ionic oxide M m O n . The dopant occupancy in the LN matrix can be determined by comparing the deviation of its lattice energy in different locations at both Li + and Nb 5+ sites, on the basis of the bond length relaxation of impurity ions, which can agree well with the experiment results. The effect of impurity ions on the property modification of LN crystals is also discussed according to our calculated results.

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34

Nomoto, Kazuki, Wenshen Li, Bo Song, Zongyang Hu, Mingda Zhu, Meng Qi, Vladimir Protasenko, et al. "Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV." Applied Physics Letters 120, no. 12 (March 21, 2022): 122111. http://dx.doi.org/10.1063/5.0083302.

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Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

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Ismailov K.A., Kenzhaev Z.T., Koveshnikov S.V., Kosbergenov E. Zh., and Ismaylov B.K. "Radiation resistance of nickel-doped silicon solar cells." Physics of the Solid State 64, no. 5 (2022): 513. http://dx.doi.org/10.21883/pss.2022.05.53509.253.

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The influence of nickel doping on the radiation resistance of silicon solar cells in the range of γ-irradiation doses of 10^5-108 rad was studied. It is shown that diffusion doping of silicon with impurity nickel atoms increases the radiation resistance of the parameters of silicon solar cells. It is assumed that the reason for the increase in the radiation resistance of such solar cells is the existence of clusters of impurity nickel atoms, which serve as sinks for radiation defects. Keywords: silicon, γ-irradiation, nickel, cluster, solar cell.

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Jain, Sandeep Kumar, and Pankaj Srivastava. "Effect of Nitrogen Impurity on Electronic Properties of Boron Nanotubes." Advances in Condensed Matter Physics 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/706218.

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For the first time we present electronic band structure and density of states for nitrogen doped hexagonal ultrathin boron nanotubes in the framework of density functional theory. The considered models of nanotubes below 5 Å diameter are armchair (3,3), zigzag (5,0), and chiral (4,2). The impurity chosen for the study is nitrogen and concentration of impurity atoms is limited to two. The study reveals that (3,3) BNT retains its metallic nature after nitrogen doping. However, metallicity gets increased which is attributed by the excess electrons of nitrogen. Further, it also brings out that (5,0) BNT which is originally metal transforms into semiconductor after nitrogen interaction and the band gap at G point increases with the impurity. Moreover, the band gap of (4,2) BNT reduces significantly and turns into semimetal for nitrogen doping. Thus, the nitrogen impurity has the predominant effect on the electronic properties of BNTs and therefore can be regarded as suitable candidates for nanoelectronic and field emission devices.

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37

Tang, Yixi, Wenzhe Zhou, Chenhua Hu, Jiangling Pan, and Fangping Ouyang. "Electronic and magnetic properties of phosphorene tuned by Cl and metallic atom co-doping." Physical Chemistry Chemical Physics 21, no. 34 (2019): 18551–58. http://dx.doi.org/10.1039/c9cp02643f.

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We studied the electronic and magnetic properties of Cl and transition metal co-doped phosphorene. Different species and doping sites gave various characteristics. Biaxial strain was used to adjust the impurity states for V–Cl and Co–Cl co-doping.

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38

Shuman V. B., Lavrentiev A. A., Yakovleva A. A., Abrosimov N. V., Lodygin A. N., Portsel L. M., and Astrov Yu. A. "Solubility of magnesium in silicon." Semiconductors 56, no. 9 (2022): 642. http://dx.doi.org/10.21883/sc.2022.09.54128.9883.

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The solubility of impurity magnesium, which was introduced by diffusion in the temperature range of 1100-1300oC in silicon, is studied by secondary-ion mass spectrometry. It is demonstrated that, with the electrically inactive impurity component taken into account, the maximum solubility of magnesium in silicon is 1-2 orders of magnitude lower (and the diffusion coefficient is higher) than the values reported earlier. Keywords: silicon, doping, magnesium impurity, solubility.

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39

Creange, Nicole, Costel Constantin, Jian-Xin Zhu, Alexander V. Balatsky, and Jason T. Haraldsen. "Computational Investigation of the Electronic and Optical Properties of Planar Ga-Doped Graphene." Advances in Condensed Matter Physics 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/635019.

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We simulate the optical and electrical responses in gallium-doped graphene. Using density functional theory with a local density approximation, we simulate the electronic band structure and show the effects of impurity doping (0–3.91%) in graphene on the electron density, refractive index, optical conductivity, and extinction coefficient for each doping percentage. Here, gallium atoms are placed randomly (using a 5-point average) throughout a 128-atom sheet of graphene. These calculations demonstrate the effects of hole doping due to direct atomic substitution, where it is found that a disruption in the electronic structure and electron density for small doping levels is due to impurity scattering of the electrons. However, the system continues to produce metallic or semimetallic behavior with increasing doping levels. These calculations are compared to a purely theoretical 100% Ga sheet for comparison of conductivity. Furthermore, we examine the change in the electronic band structure, where the introduction of gallium electronic bands produces a shift in the electron bands and dissolves the characteristic Dirac cone within graphene, which leads to better electron mobility.

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40

Li, Peng, Hideki Abe, and Jinhua Ye. "Band-Gap Engineering of NaNbO3for Photocatalytic H2Evolution with Visible Light." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/380421.

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A new visible light response photocatalyst has been developed for H2evolution from methanol solution by elemental doping. With lanthanum and cobalt dopants, the photoabsorption edge of NaNbO3was effectively shifted to the visible light region. It is also found that the photoabsorption edge is effectively controlled by the dopant concentration. Under visible light irradiation, H2was successfully generated over the doped NaNbO3samples and a rate of 12 μmol·h−1was achieved over (LaCo)0.03(NaNb)0.97O3. Densityfunctional theory calculations show that Co-induced impurity states are formed in the band gap of NaNbO3and this is considered to be the origin of visible-light absorption upon doping with La and Co.

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Jiang, Zaiyong, Yuanyuan Liu, Tao Jing, Baibiao Huang, Zeyan Wang, Xiaoyang Zhang, Xiaoyan Qin, and Ying Dai. "One-pot solvothermal synthesis of S doped BiOCl for solar water oxidation." RSC Advances 5, no. 58 (2015): 47261–64. http://dx.doi.org/10.1039/c5ra07776a.

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Bubenov, Sergei S., Sergey G. Dorofeev, Andrei A. Eliseev, Nikolay N. Kononov, Alexey V. Garshev, Natalia E. Mordvinova, and Oleg I. Lebedev. "Diffusion doping route to plasmonic Si/SiOx nanoparticles." RSC Advances 8, no. 34 (2018): 18896–903. http://dx.doi.org/10.1039/c8ra03260b.

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43

Asvarov, Abil S., Aslan K. Abduev, Akhmed K. Akhmedov, and Vladimir M. Kanevsky. "On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films." Materials 15, no. 17 (August 25, 2022): 5862. http://dx.doi.org/10.3390/ma15175862.

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In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.

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Yang, L. H., C. Y. Fong, and C. S. Nichols. "Impurity-defect complexes and doping mechanism ina-Si:H." Physical Review Letters 66, no. 25 (June 24, 1991): 3273–76. http://dx.doi.org/10.1103/physrevlett.66.3273.

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Han, Qi, Baoming Yan, Zhenzhao Jia, Jingjing Niu, Dapeng Yu, and Xiaosong Wu. "Effect of impurity doping in gapped bilayer graphene." Applied Physics Letters 107, no. 16 (October 19, 2015): 163104. http://dx.doi.org/10.1063/1.4934489.

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Tani, Jun-ichi, and Hiroyasu Kido. "Impurity doping into Mg2Sn: A first-principles study." Physica B: Condensed Matter 407, no. 17 (September 2012): 3493–98. http://dx.doi.org/10.1016/j.physb.2012.05.008.

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Kano, Masataka, Akira Wakamiya, Kohei Sakai, Kohei Yamanoi, Marilou Cadatal-Raduban, Tomoharu Nakazato, Toshihiko Shimizu, Nobuhiko Sarukura, Dirk Ehrentraut, and Tsuguo Fukuda. "Response-time-improved ZnO scintillator by impurity doping." Journal of Crystal Growth 318, no. 1 (March 2011): 788–90. http://dx.doi.org/10.1016/j.jcrysgro.2010.10.192.

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48

Chu, Sheng-Yuan, Zhou Ye, and Kenji Uchino. "Impurity doping effect on photostriction in PLZT ceramics." Advanced Performance Materials 1, no. 2 (1994): 129–43. http://dx.doi.org/10.1007/bf00713727.

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Tani, Jun-ichi, Masanari Takahashi, and Hiroyasu Kido. "First-principles calculation of impurity doping into Mg2Ge." Journal of Alloys and Compounds 485, no. 1-2 (October 2009): 764–68. http://dx.doi.org/10.1016/j.jallcom.2009.06.099.

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50

Mondal, T. K., and E. S. R. Gopal. "Perturbation of critical solution temperatures by impurity doping." Journal of Thermal Analysis 37, no. 11-12 (November 1991): 2613–19. http://dx.doi.org/10.1007/bf01912806.

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