Relevant bibliographies by topics / Impurity doping

Academic literature on the topic 'Impurity doping'

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Published: 9 March 2023
Last updated: 10 March 2023

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Journal articles on the topic "Impurity doping"

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Park, Kwan Ho, Jae Yong Jung, Jung Il Lee, Kyung Wook Jang, Whan Gi Kim, and Il Ho Kim. "Synthesis and Electronic Transport Properties of Sn-Doped CoSb3." Materials Science Forum 658 (July 2010): 21–24. http://dx.doi.org/10.4028/www.scientific.net/msf.658.21.

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Sn-doped CoSb3 skutterudites were prepared by encapsulated induction melting and their electronic transport properties were examined. The Sn dopant generated excess charge carriers, which increased in concentration with increasing Sn doping content. However, the carrier mobility decreased with increasing doping content, indicating a decrease in the hole mean free path by impurity scattering. The Seebeck coefficient decreased and the electrical resistivity decreased slightly with increasing the carrier concentration due to the reduced carrier mobility by impurity scattering. The lattice thermal conductivity was dominant in the Sn-doped CoSb3 skutterudites.
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Zeng, Jieqiong, and Hong Yu. "A First-Principle Study of B- and P-Doped Silicon Quantum Dots." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/147169.

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Doping of silicon quantum dots (Si QDs) is important for realizing the potential applications of Si QDs in the fields of Si QDs-based all-Si tandem solar cells, thin-film transistors, and optoelectronic devices. Based on the first-principle calculations, structural and electronic properties of hydrogen terminated Si QDs doped with single Boron (B) or phosphorus (P) are investigated. It is found out that the structural distortion induced by impurity doping is related to the impurity characteristic, impurity position, and the QD size according to the structural analysis. The relative energetic stability of Si QDs with a single impurity in different locations has been discussed, too Furthermore, our calculations of the band structure and electronic densities of state (DOS) associated with the considered Si QDs show that impurity doping will introduce impurity states within the energy gap, and spin split occurs for some configurations. A detailed analysis of the influences of impurity position and QD size on the impurity levels has been made, too.
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Fukata, Naoki. "Impurity Doping in Silicon Nanowires." Advanced Materials 21, no. 27 (May 18, 2009): 2829–32. http://dx.doi.org/10.1002/adma.200900376.

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Li, Lei, Ruixiang Hou, Lili Zhang, Yihang Chen, L. Yao, Nongnong Ma, Youqin He, Xiao Chen, Wanjin Xu, and G. G. Qin. "Ultra-Shallow Doping of GaAs with Mg, Cr, Mn and B Using Plasma Stimulated Room-Temperature Diffusion." Journal of Nanoscience and Nanotechnology 20, no. 3 (March 1, 2020): 1878–83. http://dx.doi.org/10.1166/jnn.2020.17162.

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It is demonstrated that Mg, Cr, Mn and B can be doped close to GaAs surface by plasma doping without external bias at room temperature (RT). The process only takes a few minutes, and impurity densities in the range of 1018–1021/cm3 can be achieved with doping depths about twenty nanometers. The experiment results are analyzed and the physical mechanism is tentatively explained as follows: during the doping process, impurity ion implantation under plasma sheath voltage takes place, simultaneously, plasma stimulates RT diffusion of impurity atom, which plays the main role in the doping process. The enhanced RT diffusion coefficients of Mg, Cr, Mn and B in GaAs are all in the order of magnitude of 10-15 cm2sec-1. This is reported for the first time among all kinds of plasma assisted doping methods.
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YOGAMALAR, N. RAJESWARI, M. ASHOK, and A. CHANDRA BOSE. "BLUE EMISSION AND BANDGAP MODIFICATION IN N:ZnO NANORODS." Functional Materials Letters 04, no. 03 (September 2011): 271–75. http://dx.doi.org/10.1142/s1793604711002007.

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Nanorods of nitrogen-doped ZnO (N:ZnO) are grown by hydrothermal chemical precipitation method. The average crystallite size, surface morphology, and particle size distribution are estimated and characterized from powder X-ray diffractometer (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), respectively. The characteristic vibration mode of metal-oxide is confirmed from Fourier transform infrared spectroscopy (FT-IR) study. The absorption spectra of N:ZnO in the ultraviolet visible (UV-vis) region and their variations are recorded as a function of dopant concentration. The Tauc plot elucidates that the bandgap of N:ZnO increases up to 6 atomic percent (at.%) of dopant concentration and then decreases for heavy doping. The widening and narrowing in bandgap is interpreted in terms of impurity induced absorption edge shift due to N doping. Photoluminescence (PL) spectra revealed the existence of visible band, arising from impurity related defects.
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König, Dirk, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, et al. "Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating." Beilstein Journal of Nanotechnology 9 (August 23, 2018): 2255–64. http://dx.doi.org/10.3762/bjnano.9.210.

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Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.
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Wang, Yu, Yuan Peng Shou, and Yu Qiu. "Light Doping Effect on System Energy in Conjugated Polymers." Advanced Materials Research 590 (November 2012): 79–86. http://dx.doi.org/10.4028/www.scientific.net/amr.590.79.

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Based on a tight binding model, we investigate impurity effect upon the stability of neutral and negatively or positively charged 1D conjugated polymer chains. Impurities are introduced by an attractive or a repulsive potential located at the lattice sites. The offsets of system energy due to light doping are calculated within adiabatic approximation. We show that doping position has significant impact upon system stability. A general picture of impurity distribution along the stretch direction of the polymer chain is obtained for both attractive and repulsive impurity potentials in neutral as well as in charged conjugated polymers. A polymer chain can generally be divided into edge, center and transition regions in terms of impurity distribution. It is found the static impurity distribution within a polymer is dominated by the strength and the sign of the impurity potential as well as whether the polymer chain is neutral or charged. Impurity distribution within the edge and the transition region is characterized by cluster and that within the center region by separation.
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SHARMA, T. P., R. KUMAR, G. JAIN, and S. K. SHARMA. "STUDY OF Cu DOPING ON PbS THIN FILMS." Modern Physics Letters B 03, no. 11 (July 20, 1989): 825–28. http://dx.doi.org/10.1142/s0217984989001308.

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Lead sulphide thin films have been deposited by conventional chemical bath technique. The effect of Cu doping is studied on the resistivity and the band gap of these films. An anamolous behavior is obtained in the case of variation of band gap with impurity (mol%) which shows that certain values of impurity have prominent features. While the resistivity decreases first with the increase in impurity, after a particular value the resistivity adopts a rising trend, and on still higher doping the decreased resistivity again starts to take place.
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Lawlor, James A., and Mauro S. Ferreira. "Sublattice asymmetry of impurity doping in graphene: A review." Beilstein Journal of Nanotechnology 5 (August 5, 2014): 1210–17. http://dx.doi.org/10.3762/bjnano.5.133.

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In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.
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FONG, C. Y., and L. H. YANG. "POSSIBLE DOPING MECHANISM IN a-Si:H—THE IMPURITY-DEFECT COMPLEX MODEL." Modern Physics Letters B 06, no. 05 (February 28, 1992): 235–43. http://dx.doi.org/10.1142/s0217984992000314.

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The present status of understanding the doping mechanism in hydrogenated amorphous silicon was reviewed. In particular, we focused on a possible final state of the doping process — the impurity-defect complex. Both theoretical and experimental evidences favor the formation of the impurity-defect complex. However, the microscopic process of forming this final state is still controversial.
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Dissertations / Theses on the topic "Impurity doping"

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Ciarkowski, Timothy A. "Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity Incorporation." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/94551.

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GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as opposed to material whose properties are dominated by structural and chemical defects. In addition, very thick films can be grown without cracking due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find growth conditions which reduces contamination without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of the intentional dopants.
Doctor of Philosophy
GaN is a compound semiconductor which has the potential to revolutionize the high power electronics industry, enabling new applications and energy savings due to its inherent material properties. However, material quality and purity requires improvement. This improvement can be accomplished by reducing contamination and growing under extreme conditions. Newly available bulk substrates with low defects allow for better study of material properties. In addition, very thick films can be grown without cracking on these substrates due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find optimal growth conditions for high purity GaN without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of impurities.
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Zhao, Hehong. "Impurity and Back Contact Effects on CdTe/CdS Thin Film Solar Cells." Scholar Commons, 2007. https://scholarcommons.usf.edu/etd/580.

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CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices by improving the open circuit voltage Voc and current density Jsc. Efforts focused on increasing the Voc, which include increasing the doping concentration by introducing Phosphorus and Antimony, finding and testing new back contact materials, and varying the ambient of CSS CdTe. In addition, the effect of Zn2SnO4 on the cells' performance was also studied. Electrical characterization of the thin films and completed devices were carried out by Current-Voltage (J-V), Capacitance-Voltage (C-V), and Spectral Response (SR) measurements. Structural/chemical characterization was done by SEM, XRD and EDS analysis. The ambient of CSS CdTe affects the growth rate, the grain size and electronic properties of CdTe. The N2/O2 mixture with varied ratio (N2/O2=9/1, 7/3, 5/5 and 1/9) was used in this study. The cells' performance and the net carrier concentration were studied as a function of the N2/O2 ratio. The net carrier concentration increases with the increasing O2 concentration. The extrinsic impurities (P and Sb) were incorporated into CdTe layer. Phosphorus was directly introduced into CSS CdTe source. The Sb was incorporated into CdTe by a diffusion process. The effects of the annealing parameters, the excess Sb on CdTe surface, the CdCl2 treatment and the depth of Sb in CdTe were studied. Higher doping concentration up to 1016 cm-3 has been achieved, however, Voc is still in the range of 830 mV.
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Erwin. "Electron eigenvalues and eigenfunctions for a nanochannel with a finite rectangular barrier." Virtual Press, 1994. http://liblink.bsu.edu/uhtbin/catkey/917032.

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Electron scattering by a single or multiple impurities affects the quantizaton of conductance of a semiconductor nanochannel. The theoretical model of electron transport in a hardwall nanostructure with an impurity requires an analysis of the electronic transverse energy levels, eigenfunctions and hopping integrals resulting from cross channel or transverse confinement. Theoretical equations for the electronic transverse energy levels, wavefunctions and hopping integrals in the case of a repulsive, finite strength rectangular barrier arbitrarily positioned in the nanochannel are presented. The effects of size, strength and location of the impurity are discussed.In order to find the electronic transverse energy levels, wavefunctions and hopping integrals, two FORTRAN computer programs were developed. The first, called Program Data Input, writes the computational parameters to a data file. The second, Program Single Impurity, uses this data file in performing the calculations of the electronic transverse energy levels, eigenfunctions and hopping integrals.
Department of Physics and Astronomy
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ANAND, ABHINAV. "Spectroscopic avenues and photophysical phenomena in Colloidal Nanocrystals." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/311084.

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I nanocristalli colloidali a semiconduttore (NC), grazie alle loro proprietà ottiche regolabili tramite la dimensione ed alla processabilità in soluzione, sono state a lungo proposte come alternative versatili e sintetizzate chimicamente per numerose tecnologie fotoniche, optoelettroniche e quanto-computazionali, nonché come building-blocks funzionali e superatomici per metamateriali artificiali assemblati con approcci bottom-up. Dalla loro scoperta oltre 30 anni fa, enormi progressi nella chimica colloidale e superficiale, nella fisica dei NC e nelle applicazioni nei dispostivi, hanno portato queste proposte sempre più vicine alla realtà. In questo lavoro esploro i fenomeni fotofisici di quattro diversi sistemi di NC, differenziati dalla composizione chimica e dalla loro forma. Ho studiato i più promettenti NC ternari intrinseci di CuInS2 che in modo innato offrono alternative senza metalli pesanti e non tossiche ai materiali esistenti a base di Cd e Pb, caratterizzate da un ampio Stokes shift e lunghi tempi di decadimento di fotoluminescenza. L’origine di queste proprietà ottiche nei NC di CuInS2 non era però stata compresa, con teorie contrastanti che le descrivono. Qui, dopo aver confermato sperimentalmente l’origine della PL dovuta alla struttura fine della banda di valenza, abbiamo ottimizzato i NC per fabbricare un concentratore solare luminescente ad ampia area (30x30 cm2) con una efficienza di potenza ottica record del 6.8%. In seguito, discuto gli effetti del drogaggio ad impurezza elettronica in NC di calcogenuri binari sintetizzati tramite una innovativa procedura di crescita “a seme” che risulta in un numero preciso di droganti in ogni NC, quindi superando il limite poissoniano per le loro proprietà di semiconduttori magnetici diluiti (DMS). Studi strutturali, spettroscopici e magneto-ottici descrivono in dettaglio i processi fisici coinvolti, dovuti al livello di drogaggio esatto dei NC. Gli atomi d’oro, inseriti come droganti per la prima volta all’interno di NC II-VI, sono incorporati come specie non magnetica Au+ ed attivano una PL intensa e variabile con la dimensione all’interno del gap del semiconduttore, modificando artificialmente l’occupazione della banda di valenza. Fondamentalmente, la conversione transiente degli Au+ in Au2+ paramagnetici (configurazione 5d9) sotto eccitazione ottica genera sia un forte magnetismo che un comportamento da DMS che dimostrano il contributo delle singole impurezze paramagnetiche al magnetismo macroscopico dei NC, sbloccando il loro potenziale applicativo in dispositivi quantici e di spintronica. Inoltre, riporto gli effetti del drogaggio sostituzionale con atomi paramagnetici in NC di perovskite CsPbCl3 drogati con Mn2+ e rivelo il meccanismo di trasferimento di energia specifico che coinvolge stati di difetto poco profondi che risultano nella duplice emissione di PL e inducono uno Stokes shift vantaggioso per tecnologie di gestione fotonica. Infine, concludo mostrando gli effetti della anisotropia di forma in sistemi di NC colloidali con la sintesi e lo studio di nanoplateles bidimensionali di CdTe. Inoltre, mostro alcuni dati spettroscopici preliminari che rendono questi sistemi molto attraenti per applicazioni nella tecnologia laser e di rilevamento di radiazione ultraveloce. Nel corso di questo lavoro, ho lavorato sulla sintesi colloidale delle nanostrutture e studiato i sistemi nanocristallini menzionati usando tecniche di caratterizzazione strutturale come la diffrazione di raggi X e la microscopia a trasmissione elettronica. Tecniche spettroscopiche tra cui l’assorbimento transiente ultraveloce, la PL a stato stazionario e risolta in tempo a temperature criogeniche, il dicroismo circolare magnetico e la risonanza paramagnetica di elettroni sono state usate per investigare queste nanostrutture, chiarendo la loro fotofisica fondamentale e sfruttando i loro potenziali applicativi in tecnologie moderne e di nuova generazione.
Colloidal semiconductor nanocrystals (NCs), owing to their size-tuneable electronic properties and solution processability, have long been proposed as versatile chemically synthesized alternatives for many photonic, optoelectronic, and quantum computational technologies as well as super-atomic functional building blocks for bottom-up assembled artificial metamaterials. Since their original discovery over 30 years ago, tremendous advancements in colloidal and surface chemistry, NC physics, and device application have brought this vision closer to reality. In this work I explore these photophysical phenomena in four different NC systems diversified by chemical composition and shapes. I studied the most favorable intrinsic ternary CuInS2 NCs which inherently offers heavy metal free, non-toxic alternatives to the existing Cd and Pb based materials with a large Stokes shift and long photoluminescence decay time. The origin of these optical properties in CuInS2 NCs were however not fully understood with conflicting theories describing its characteristic aforementioned properties. Here, subsequential to experimentally confirming the valence band fine structure origin of luminescence in these nanostructures, we utilized the optimized NCs and fabricated a large area Luminescent solar concentrator of 30ˣ30 cm2 area with record Optical Power Efficiency of 6.8% to the date. Then, I discuss the effects of electronic impurity doping in binary chalcogenide NCs synthesized by a novel seeded growth procedure resulting in quantized dopants in each NC thus overcoming the Poissionian bottleneck for their diluted magnetic semiconductor properties. Structural, spectroscopic, and magneto-optical investigations trace a comprehensive picture of the physical processes involved, resulting from the exact doping level of the NCs. Gold atoms, doped here for the first time through the reaction protocol into II−VI NCs, are found to incorporate as non-magnetic Au+ species activating intense size-tuneable intragap photoluminescence and artificially offsetting the hole occupancy of valence band states. Fundamentally, the transient conversion of Au+ to paramagnetic Au2+ (5d9 configuration) under optical excitation results in strong photoinduced magnetism and diluted magnetic semiconductor behaviour revealing the contribution of individual paramagnetic impurities to the macroscopic magnetism of the NCs unlocking their potential to be exploited for applications in quantum and spintronic devices. Moreover, I communicate the effects of substitutional doping with paramagnetic atoms in Manganese doped CsPbCl3 perovskite NCs and reveal a peculiar energy transfer mechanism involving shallow defects states subsequently resulting in dual emission and inducing Stokes shift desirable for photon management technologies. Finally, I conclude by talking about the effect of shape anisotropy in colloidal NC systems by synthesizing and studying two-dimensional colloidal CdTe nanoplatelets. Moreover, I report some very interesting preliminary spectroscopic data that presents these NC systems at great heed with respect to their application in lasing technology and in Ultrafast radiation detection applications. Through the course of my PhD, I worked on the colloidal synthesis of nanostructures, and studied the aforementioned NC systems using structural characterization techniques like X-Ray diffractions and transmission electron microscopy. Spectroscopic techniques including ultrafast transient absorption, steady state and time resolved photoluminescence spectroscopy at cryogenic temperatures, magnetic circular dichroism and electron paramagnetic resonance were used to study and report these nanostructures, thus elucidating their fundamental photophysics and exploit their applicative potential in modern, next generation technologies.
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Dürr, Jérôme. "Contribution à l'étude structurale du système BaBiO3 dopé par du plomb ou par du potassium." Grenoble 1, 1993. http://www.theses.fr/1993GRE10008.

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Le compose babio#3, connu pour ses proprietes supraconductrices lorsqu'on substitue le bismuth par le plomb, a suscite un regain d'interet lorsqu'une temperature supraconductrice de 30 k environ a ete obtenue en le dopant avec du potassium. Nous avons caracterise finement par analyse e. D. X. Des monocristaux prepares soit par flux soit par electrocristallisation. Nous avons montre que dans les deux cas seuls les cristaux faiblement dopes (moins de 10% de potassium) etaient homogenes. Au-dela de ce taux de substitution, ils presentent soit un gradient de composition, soit plusieurs compositions distinctes. Ceci se traduit en general par un elargissement de la transition supraconductrice mesuree en susceptibilite alternative. Nous avons aussi mis en evidence deux nouvelles phases, l'une contenant du sodium, l'autre presentant un rapport (ba+k)/bi different de celui relatif a une phase perovskite. Par ailleurs, nous avons determine par diffraction des rayons x la structure d'un monocristal macle de composition k#0#. #0#2#3ba#0#. #9#9#4bi#0#. #9#7#4o#2#. #9#5. Les meilleurs affinements ont ete obtenus en decrivant la structure dans le groupe d'espace i2/m, comme pour le compose non dope. Nous avons trouve que pour cette faible concentration en potassium les atomes de potassium ne substituaient pas le baryum mais etaient situes sur l'un des deux sites de bismuth. Le meme type d'etude faite sur un monocristal de babio#3 dope au plomb (13%) a montre que la encore c'etait le groupe d'espace i2/m qui permettait la meilleure description de la structure. Enfin, nous avons determine la structure d'une nouvelle phase de type perovskite double, de formule ba#3#. #1#2k#0#. #6#8bi#3#. #4#4na#0#. #7#0o#1#2. La repartition des charges laisse peu d'espoir de rendre ce compose supraconducteur
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Boukezzata, Messaoud. "Mecanismes d'oxydation des si-lpcvd fortement dopes au bore." Toulouse 3, 1988. http://www.theses.fr/1988TOU30183.

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Etude de la cinetique et des mecanismes d'oxydation thermique de films dopes a 210**(20) cm**(-3) b "in situ" et par implantation post-depot. Les resultats prennent en compte les influences du mode de dopage et de la microstructure initiale des films (qui varie d'un etat quasi-amorphe a un etat nettement polycristallin). Leur analyse s'appuie sur a) un logiciel de modelisation de l'oxydation de si et la comparaison avec la cinetique d'oxydation de temoins monocristallins qui permettent de les exprimer en termes de constante de diffusion d et de la vitesse de reaction de surface k::(s) de l'oxydation, b) la comparaison entre depots non dopes, dopes a b par implantation ou "in situ" et c) le suivi des proprietes structurales (rugosite, diagrammes rheed, observations tem) et electroniques des films
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Hénaux, Stéphane. "Contribution à l'amélioration des méthodes de caractérisation électrique des matériaux Silicium Sur Isolant (SOI)." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10116.

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L'essor actuel des technologies soi est lie a la production d'un materiau de depart de qualite, dont le juge final est le comportement electrique des circuits integres. Cette these decrit des ameliorations et de nouvelles idees pour l'evaluation des proprietes electriques des materiaux soi. Les methodes presentees sont appliquees en priorite au nouveau materiau unibond. Nous donnons d'abord une vue d'ensemble des technologies soi et des methodes de caracterisation disponibles. Nous exposons ensuite notre contribution en commencant par la mesure electrique d'epaisseur du film de silicium dans un dispositif mos, pour laquelle nous proposons une extension d'une methode existante. La duree de vie des porteurs dans le film de silicium est ensuite etudiee par les techniques recentes des transitoires de courant de drain dans des transistors mos. Nous montrons la necessite d'une approche statistique pour comparer entre eux divers materiaux soi. Nous presentons ensuite des methodes de caracterisation rapide, ne necessitant pas la fabrication de dispositifs. L'oxyde enterre et le substrat silicium sous-jacent sont etudies par sonde a mercure, apres elimination du film de silicium par voie chimique. Pour la mesure du dopage residuel du film mince soi, nous evaluons les possibilites du pseudo-transistor mos. Nous proposons par ailleurs une nouvelle methode pour determiner tres rapidement et sans ambiguite le type, applicable aux tres faibles dopages. La derniere partie est consacree a l'oxyde de grille des technologies mos-soi. Une etude en time dependent dielectric breakdown sur dispositifs mos nous permet de montrer que le comportement en claquage intrinseque est identique sur soi et sur silicium massif. Pour s'affranchir du cout et de la longueur d'une telle etude, nous proposons une nouvelle methode simple de caracterisation d'oxyde de grille sur soi, ne necessitant pas d'autre etape technologique que la realisation de l'oxyde lui-meme.
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Domange, Jocelyn. "Étude et exploitation de bolomètres de nouvelle génération à électrodes concentriques pour la recherche de matière noire froide non-baryonique dans l’expérience Edelweiss II." Thesis, Paris 11, 2011. http://www.theses.fr/2011PA112169/document.

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EDELWEISS est une expérience de détection directe de matière noire froide non-baryonique sous forme de particules massives et faiblement interagissantes (connues sous l'acronyme de WIMPs), qui constituent actuellement les candidats les plus populaires pour rendre compte de la masse manquante de l'Univers. Dans ce but, EDELWEISS utilise des bolomètres de germanium opérés à température cryogénique (20 mK environ) dans le Laboratoire Souterrain de Modane (LSM) à la frontière franco-italienne. En particulier, depuis 2008, un nouveau type de détecteur est en fonctionnement, équipé d'électrodes concentriques pour optimiser le rejet des évènements de surface (détecteurs à grilles coplanaires). Cette thèse se décompose en plusieurs axes de recherche. Tout d'abord, nous avons réalisé des mesures concernant la collecte des charges dans les cristaux. Les lois de vitesse des porteurs (électrons et trous) ont été déterminées dans le germanium à 20 mK dans la direction <100>, et une étude complète de la répartition des charges a été menée, avec une évaluation de l'anisotropie du transport et de la diffusion transverse des porteurs. Ces résultats permettent d'avoir une meilleure compréhension du fonctionnement interne des détecteurs d'Edelweiss. Ensuite, des études portant sur l'amélioration des performances ont été effectuées. Nous avons en particulier permis d'optimiser la procédure de régénération des cristaux et améliorer le rejet passif des évènements de surface (β). Le volume utile de détection des détecteurs a été évalué en utilisant les raies de deux radio-isotopes activés cosmiquement, le 68Ge et le 65Zn. Enfin, une étude exhaustive portant sur l'étude des spectres à basse énergie a été menée, ce qui permet de mettre au point une méthode d'analyse systématique pour la recherche de WIMPs de basse masse dans EDELWEISS
EDELWEISS is a direct non-baryonic cold dark matter detection experiment in the form of weakly interacting massive particles (also known as WIMPs), which currently constitute the most popular candidates to account for the missing mass in the Universe. To this purpose, EDELWEISS uses germanium bolometers at cryogenic temperature (20 mK approximately) in the Underground Laboratory of Modane (LSM) at the French-Italian border. Since 2008, a new type of detector is operated, equipped with concentric electrodes to optimize the rejection of surface events (coplanar-grid detectors). This thesis work is divided into several research orientations. First, we carried out measurements concerning charge collection in the crystals. The velocity laws of the carriers (electrons and holes) have been determined in germanium at 20 mK in the <100> orientation, and a complete study of charge sharing has been done, including an evaluation of the transport anisotropy and of the straggling of the carriers. These results lead to a better understanding of the inner properties of the EDELWEISS detectors. Then, studies relating to the improvement of the performances were carried out. In particular, we have optimized the space-charge cancellation procedure in the crystals and improved the passive rejection of surface events (β). The fiducial volume of the detectors has been evaluated using two X-ray lines from cosmically activated radionuclides: 68Ge and 65Zn. Lastly, an exhaustive study of the low energy spectra has been carried out, which makes it possible to develop a systematic analysis method for the search of low-mass WIMPs in EDELWEISS
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9

Atmani, Hassane. "Investigations dans le domaine des comportements thermiques de matériaux désordonnés : application au sélénium et aux mélanges Se-Bi à faible concentration en bismuth." Rouen, 1988. http://www.theses.fr/1988ROUES009.

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Marcon, Jérôme. "Simulation numérique de la diffusion de dopants dans les matériaux III-V pour les composants microoptoélectroniques." Rouen, 1996. http://www.theses.fr/1996ROUES061.

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Le sujet de cette thèse concerne la modélisation et la simulation numérique de la diffusion des dopants dans les composants microoptoélectroniques à base de matériaux III-V. Cette diffusion peut se produire au cours des traitements thermiques nécessaires à la fabrication des composants (épitaxie, réalisations de contacts,. . . ) Dans un premier temps, les aspects physiques et technologiques de la diffusion sont abordés. Une attention particulière est accordée au mécanisme substitutionnel-interstitiel de diffusion. La modélisation de la diffusion des dopants de type p dans les matériaux III-V aboutit à la résolution numérique de systèmes non linéaires d'équations différentielles aux dérivées partielles. Deux méthodes ont été utilisées : la méthode des différences finies sur le temps et sur l'espace et la méthode des lignes. Plusieurs phénomènes physiques sont pris en compte dont les mécanismes de Frank/Turnbull et du kick-out auxquels s'ajoutent les effets des charges électriques, du champ électrique et de l'effet du niveau de Fermi. Dans une dernière partie sont présentées les simulations des profils de diffusion du béryllium dans l'InGaAs. L'ensemble des résultats obtenus est discuté et comparé avec les données précédemment publiées.
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Books on the topic "Impurity doping"

1

Kobayashi, Tatsuya. Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4475-5.

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B, Fair Richard, Pearce Charles W, Washburn Jack 1921-, Materials Research Society Meeting, and Symposium on Impurity Diffusion and Gettering in Semiconductors (1984 : Boston, Mass.), eds. Impurity diffusion and gettering in silicon: Symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1985.

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National Renewable Energy Laboratory (U.S.) and IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.), eds. Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels: The case of Cu impurity in CdTe : preprint. Golden, CO]: National Renewable Energy Laboratory, 2011.

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Impurities in semiconductors: Solubility, migration, and interactions. Boca Raton: CRC Press, 2004.

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Wang, F. F. Y. Impurity Doping Processes in Silicon. Elsevier Science & Technology Books, 2012.

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Fair, Richard B., Charles W. Pearce, and Jack Washburn. Impurity Diffusion and Gettering in Silicon: Volume 36. University of Cambridge ESOL Examinations, 2014.

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Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. CRC, 2004.

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Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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Fistul, Victor I. Impurities in Semiconductors: Solubility, Migration and Interactions. Taylor & Francis Group, 2004.

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Book chapters on the topic "Impurity doping"

1

Fukata, Naoki. "Impurity Doping in Semiconductor Nanowires." In Fundamental Properties of Semiconductor Nanowires, 143–81. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-9050-4_3.

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Zrenner, A., and F. Koch. "Doping in Two Dimensions: The δ-Layer." In Properties of Impurity States in Superlattice Semiconductors, 1–9. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4684-5553-3_1.

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Horii, S., Y. Ichino, Y. Yoshida, K. Matsumoto, T. Horide, M. Mukaida, A. Ichinose, R. Kita, J. Shimoyama, and K. Kishio. "Impurity-Doping Effects on Critical Current Properties in ErBa2 Cu3 Oy Films." In Ceramic Transactions Series, 57–65. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144121.ch6.

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Fukata, Naoki, T. Oshima, N. Okada, S. Matsushita, T. Tsurui, J. Chen, Takashi Sekiguchi, and K. Murakami. "Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation." In Solid State Phenomena, 553–58. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-43-4.553.

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Fathallah, M., B. Rezig, M. Zouaghi, N. M. Amer, J. P. Roger, A. C. Boccara, and D. Fournier. "Fourier Transform Photothermal Deflection Spectroscopy of Impurity Centres in CdS Films: Doping and Annealing Effects." In Photoacoustic and Photothermal Phenomena, 260–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-540-48181-2_69.

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Yoshida, M., S. Tajima, T. Wada, Y. Mizuo, T. Takata, Y. Yaegashi, A. Ichinose, H. Yamauchi, N. Koshizuka, and S. Tanaka. "Possibility of Superconductivity Destruction Caused by Neither the Reduction of Hole Concentration nor Impurity Doping." In Springer Proceedings in Physics, 421–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77154-5_84.

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Kobayashi, Tatsuya. "Introduction." In Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects, 1–12. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4475-5_1.

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Kobayashi, Tatsuya. "Experimental Methods." In Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects, 13–17. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4475-5_2.

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Kobayashi, Tatsuya. "Electronic Phase Diagram and Superconducting Property of $$\text {SrFe}_2\text {(As}_{1-x}\text {P}_x)_2$$." In Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects, 19–36. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4475-5_3.

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Kobayashi, Tatsuya. "In-Plane Resistivity Anisotropy of Ba(Fe $$_{1-x}$$ TM $$_{x}$$ ) $$_2$$ As $$_2$$ (TM $$=$$ Cr, Mn, and Co)." In Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects, 37–48. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4475-5_4.

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Conference papers on the topic "Impurity doping"

1

Zhao, Yanyan, Yunfei Chen, Kedong Bi, Zan Wang, Yanyan Ge, and Jiapeng Li. "The Effects of Different Doping Pattern on the Lattice Thermal Conductivity of Solid Ar." In ASME 2009 Second International Conference on Micro/Nanoscale Heat and Mass Transfer. ASMEDC, 2009. http://dx.doi.org/10.1115/mnhmt2009-18208.

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Equilibrium molecular dynamics method is performed to calculate the lattice thermal conductivities of solid argon doped with krypton in different geometrical distributions. The effects of centralization doping, monolayer doping, uniform doping, non-uniform doping, random doping and cubic pattern doping on the thermal conductivity of argon crystal are investigated respectively. The results demonstrate that, the uniformity of the impurity distribution plays a critical role in the thermal conductivity of solid argon. It is found that the lowest thermal conductivity could be achieved by organizing the impurity in a cubic pattern. Because both the phonon-impurity scattering and the stronger phonon-interface scattering can destroy the coherence of phonons. Calculation results suggest that the minimum thermal conductivity value among six different kinds of impurity arrangements is roughly 1.90 times lower than that of pure argon under the temperature of 17K. However, the values of thermal conductivity are almost the same as those of pure argon at higher temperatures.
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Suzuki, K., Y. Satoh, M. Itoh, M. Matsubara, and A. Sawada. "Effects of impurity doping in CrO/sub 2/." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1464160.

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Huang, Yuhua, Yuqi Zhou, Jinming Li, and Fulong Zhu. "Effect of impurity doping on 4H-SiC planarization." In 2022 23rd International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2022. http://dx.doi.org/10.1109/icept56209.2022.9873291.

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Suzuki, K., and H. Abe. "Calculations of impurity doping effects in CrO/sub 2/." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1463747.

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YOSHIDA, Akihisa, Masatoshi KITAGAWA, Kentaro SETSUNE, and Takashi HIRAO. "Impurity Doping into Single and Poly Crystalline Silicon by a Large Area Ion Doping Technique." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.a-7-4.

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Murakami, Kouichi, Tetsuya Makimura, Taiji Mizuta, Changquing Li, and Daishi Takeuchi. "Synthesis of silicon nanoparticles and impurity doping by laser ablation." In Photonics West 2001 - LASE, edited by Malcolm C. Gower, Henry Helvajian, Koji Sugioka, and Jan J. Dubowski. SPIE, 2001. http://dx.doi.org/10.1117/12.432512.

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Brost, George, S. B. Trivedi, G. V. Jagnnathan, and R. N. Schwartz. "Improved photorefractive response in ZnTe through co-doping with vanadium and manganese." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.cmb5.

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ZnTe has the potential to be an outstanding photorefractive material. In earlier work(1) it was found that incorporation of vanadium in vapor grown ZnTe was very difficult. Even when vanadium was incorporated as an active impurity the doping usually was not uniform. In this paper we report on improved photorefractive response in ZnTe through co-doping with vanadium and manganese.
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Yokogawa, Shinji, Hideaki Tsuchiya, Shinichi Ogawa, Paul S. Ho, and Ehrenfried Zschech. "Impurity Doping Effects on Electromigration Performance of Scaled-down Cu Interconnects." In Stress-induced Phenomena in Metallization. AIP, 2007. http://dx.doi.org/10.1063/1.2815786.

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Sen, Arnesh, Aishik Das, and Jayoti Das. "MOSFET GIDL Current Variation with Impurity Doping Concentration – A Novel Approach." In 2019 International Conference on Power Electronics, Control and Automation (ICPECA). IEEE, 2019. http://dx.doi.org/10.1109/icpeca47973.2019.8975525.

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Thomton, R. L., R. D. Bumham, N. Holonyak, J. E. Epler, and T. L. Paoli. "Impurity-Induced Disordering and Laser Device Applications." In Semiconductor Lasers. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/sla.1987.wb1.

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In the five years that have elapsed since the first demonstration of the phenomenon of impurity induced disordering (IID) (Laidig et al 1981) and the obvious implication to integrated optoelectronics (Holonyak et al 1981), considerable effort has been devoted to studying and utilizing this effect. It is becoming increasingly apparent that the effect is an almost universal one, being observed in a wide variety of III-V alloy systems as well as being induced by a wide variety of impurity species. Studies have been carried out using surface diffusion, ion implantation and doping during epitaxial growth. The results of this work indicate that the mechanisms are at least as complicated as the technique is universal.
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