Relevant bibliographies by topics / Impurity distribution

Academic literature on the topic 'Impurity distribution'

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Published: 4 June 2021
Last updated: 31 January 2023

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Journal articles on the topic "Impurity distribution"

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Zhang, Xiao Wei, Rui Ying Miao, Jia Min Zhong, Zong An Li, Dao Gao Wu, De Hong Chen, and Zhi Qiang Wang. "Impurity Characterization by LA-ICP-MS in Terbium Metal after Solid State Electrotransport Purification." Key Engineering Materials 921 (May 30, 2022): 119–28. http://dx.doi.org/10.4028/p-965yg3.

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Terbium metal rod with the dimension of 6.8mm in diameter and 150mm in length has been purified by solid state electrotransport (SSE) at 1050°C under a pressure of 10-5Pa for 50h, and the impurity distribution has been determined by laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). The research results indicate that, the rare earth impurity migrates from cathode to anode of the rod, and the impurity distribution is relatively uniform in the longitudinal section; low melting point impurity of Al migrates from cathode to anode and the impurity concentration distribution is relatively uniform in the longitudinal section, the segregation degree is about 10% in each sample; the impurity with high melting point, Ta, W, Mo, etc., the distribution of above impurity is very non-uniform, for the impurity of Ta, the mean concentration of sample 7 is only 8.75 ppm, but the local concentration is up to 350 ppm, and it exists in an elementary substance form in the Tb; non-rare earth impurity in Tb metal, such as Ni, Si and Ti, migrates from cathode to anode of the rod significantly; the total impurity content in cathode end is lower than other posion, the impurty content of 22 imputies in sample 6 is 648.47 ppm, is the lowest in the Tb rod, except for the high melting point impurities, the lowest impurity content is 60.05ppm in sample 7.
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Wang, Li Hua, Qiu Yan Hao, Bing Zhang Wang, Wei Zhong Sun, and Cai Chi Liu. "Distribution of Carbon in Large Diameter Semi-Insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski Technique." Advanced Materials Research 472-475 (February 2012): 587–90. http://dx.doi.org/10.4028/www.scientific.net/amr.472-475.587.

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Carbon impurity concentration and dislocation density were investigated with optical microscopy and Fourier transform infrared absorption spectrometer in radial direction of large diameter (6-inch) undoped semi-insulating Gallium Arsenide (SI-GaAs) grown by liquid encapsulated Czochralski (LEC). The experimental results showed that their distributions are both “W”-shaped along wafer diameter, which is relatively higher on the center and lower near the center, but highest on the edge of the wafer. The nonuniformity distribution of thermal stress from growth process leads to the “W”-shaped distribution of dislocations in radial direction. The adsorption of matrix elastic strain field around dislocations induces the “W”-shaped distribution of carbon impurity. Dislocations adsorb carbon impurity and carbon impurity decorates dislocations. Dislocation density distribution affects carbon behavior.
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Bochegov, V. I., and A. S. Parakhin. "Limiting impurity distribution during zone refining." Technical Physics Letters 40, no. 6 (June 2014): 460–61. http://dx.doi.org/10.1134/s1063785014060029.

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Papirov, I. I., A. I. Kravchenko, A. I. Mazin, A. V. Shiyan, and V. D. Virich. "Impurity distribution in a magnesium sublimate." Inorganic Materials 51, no. 6 (May 6, 2015): 563–65. http://dx.doi.org/10.1134/s0020168515060126.

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Nepomnyashchikh, A. I., and R. V. Presnyakov. "Impurity Distribution in Multicrystalline Silicon Growth." Inorganic Materials 54, no. 4 (April 2018): 315–18. http://dx.doi.org/10.1134/s0020168518040106.

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Czajka, Katarzyna, and Maciej M. Maśka. "Impurity distribution in a frustrated system." Physica B: Condensed Matter 378-380 (May 2006): 275–77. http://dx.doi.org/10.1016/j.physb.2006.01.103.

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Hui, Meng-jun, Kirk Beatty, Katherine Blackmore, and Kenneth Jackson. "Impurity distribution in InSb single crystals." Journal of Crystal Growth 174, no. 1-4 (April 1997): 245–49. http://dx.doi.org/10.1016/s0022-0248(96)01112-8.

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Barnes, Piers R. F., and Eric W. Wolff. "Distribution of soluble impurities in cold glacial ice." Journal of Glaciology 50, no. 170 (2004): 311–24. http://dx.doi.org/10.3189/172756504781829918.

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AbstractUnderstanding the microstructure of ice underpins the interpretation of ice-core measurements and many ice-sheet properties. A detailed study of polar snow and ice using scanning electron microscope (SEM) and X-ray analysis revealed the micro-structural distribution of soluble impurities. Sublimation under vacuum (etching) concentrated impurity from both the bulk and grain boundaries on to the specimen surfaces in detectable quantities. Sublimation in the cold room before examination (pre-etching) collected previously unobservable quantities of impurity at triple junctions. A heterogeneous distribution of impurities was observed. Chloride was frequently found to originate from the lattice, but not usually at triple junctions. Other impurities, particularly sodium chloride, were detected at grain boundaries and bubble surfaces. Sulphate was often found at triple junctions in specimens containing a high bulk concentration of the acid, frequently in conjunction with cations. This suggests the possibility that veins were only filled with significant amounts of impurity when the surrounding grain boundaries were saturated. The model of impurity arrangement inferred from the results reconciles differences between previous SEM studies; additionally it is consistent with and explains recent electrical conduction observations. The disconnected arrangement of impurity-filled grain boundaries and veins limits opportunities for significant post-depositional solute movement.
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Wang, Yu, Yuan Peng Shou, and Yu Qiu. "Light Doping Effect on System Energy in Conjugated Polymers." Advanced Materials Research 590 (November 2012): 79–86. http://dx.doi.org/10.4028/www.scientific.net/amr.590.79.

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Based on a tight binding model, we investigate impurity effect upon the stability of neutral and negatively or positively charged 1D conjugated polymer chains. Impurities are introduced by an attractive or a repulsive potential located at the lattice sites. The offsets of system energy due to light doping are calculated within adiabatic approximation. We show that doping position has significant impact upon system stability. A general picture of impurity distribution along the stretch direction of the polymer chain is obtained for both attractive and repulsive impurity potentials in neutral as well as in charged conjugated polymers. A polymer chain can generally be divided into edge, center and transition regions in terms of impurity distribution. It is found the static impurity distribution within a polymer is dominated by the strength and the sign of the impurity potential as well as whether the polymer chain is neutral or charged. Impurity distribution within the edge and the transition region is characterized by cluster and that within the center region by separation.
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Skrobian, Milan, and Rudolf Pernis. "MATHEMATICAL EQUATION FOR IMPURITY DISTRIBUTION AFTER SECOND PASS OF ZONE REFINING." Acta Metallurgica Slovaca 27, no. 1 (February 25, 2021): 32–35. http://dx.doi.org/10.36547/ams.27.1.808.

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A mathematical equation has been derived that describes impurity distribution in ingot after second pass of zone refining. While an exponential impurity distribution is calculated by a simplified model after first pass, second pass is described by mixed linear - exponential model. Relationship of transformed impurity concentration is constant over whole length of semi-infinite ingot for first pass. However, it has linear trend for second pass. Last part of molten zone at infinity solidifies differently and can be described mathematically as directional crystallization. A mathematical tool devised for second pass of zone refining can be tried to be used for derivation of functions of more complex models that would describe impurity distribution in more realistic way compared to simplified approach. Such models could include non-constant distribution coefficient and/or shrinking or widening molten zone over a length of ingot.
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Dissertations / Theses on the topic "Impurity distribution"

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Sandven, Håkon. "Evaluation of Distribution Function Models for ICRH-induced Impurity Transport in Tokamaks." Thesis, KTH, Skolan för elektro- och systemteknik (EES), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192460.

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Fusion power is the utilization of the energy released in nuclear fusion reactions. It has the potential to become an energy source which is more sustainable, safer and cleaner than the primary energy sources today. The fundamental problem for fusion power is energy confinement. Impurity ions are a major source of energy confinement loss in magnetic confinement fusion devices. Hence, impurity transport in fusion plasma is an important field to study. Ion cyclotron resonance heating (ICRH) has been shown both experimentally and theoretically to influence impurity transport in tokamaks. A poloidal asymmetry in the minority ions produces an electric potential, which causes impurity accumulation on the inboard side of the tokamak. Poloidal asymmetry in the impurity density induces a net radial impurity flux over a flux surface. This project has compared the ICRH-induced impurity transport for four approximate minority ion distribution function models with numerical results from the SELFO code. This has been done computationally for JET-like, concentric tokamak geometry with deuterium plasma, hydrogen minority ions, and tungsten impurities. Two models, the so-called bi-Maxwellian and LFS bi-Maxwellian model, are used in existing literature. Two further models are introduced, called the tri-Maxwellian and LFS tri-Maxwellian model. Unlike the bi-Maxwellian models, these models take into account the existence of thermal and fast ions in the minority population. The results show that there are noticeable differences between the different models, in particular when the resonant surface is on the inboard side. The tri-Maxwellian models offer a clear improvement over the bi-Maxwellian models compared with SELFO. However, there are some features in the SELFO results that none of the approximate models predict, this is because the models neglects wide orbits. A possible barrier in the radial transport has also been identified at flux surfaces where the impurity density asymmetry closely resembles the magnetic field strength asymmetry. The LFS bi-Maxwellian model predicts the radial position of the barrier most accurately and reliably compared with SELFO.
Fusionsenergi är utnyttjandet av energi som frigörs i kärnfusionsreaktioner, och har potential för att bli en energikälla som är mer hållbar, säkrare och renare än de primära energikällorna idag. Det grundläggande problemet för fusionskraft är energiinneslutning. Förorenande joner är en viktig källa för förlust av energiinneslutning i fusionsanläggningar med magnetisk inneslutning. Därför är föroreningstransport i fusionsplasma ett viktigt ämnesområde. Joncyklotronresonansupphettning (ICRH) har visats både experimentellt och teoretiskt att påverka föroreningstransport i tokamaker. En poloidal asymmetri i minoritetsjonerna ger en elektrisk potential, som orsakar förorening samlas på den inre sidan av fusionsanläggningen. Poloidal asymmetri i föroreningsdensiteten på ett fluxyta inducerar en netto radialflux över fluxytan. Detta projekt har jämfört ICRH-inducerad föroreningstransport för fyra approximativa distributionsfunktionsmodeller för minoritetsjon med numeriska resultat från SELFO koden. Detta har gjorts med beräkningar för JET-liknande, kon-centrisk tokamak-geometri med deuterium-plasma, väte som minoritetsjoner, och volfram som föroreningsjoner. Två modeller, s.k. bi-Maxwellian- och LFS bi-Maxwellianmodellen, används i existerande litteratur. Ytterligare två modeller introduceras, kallad tri-Maxwellian- och LFS tri-Maxwellianmodellen. Dessa modeller tar hänsyn till förekomsten av termiska och snabba joner i minoritetsbefolkningen. Resultaten visar att det finns tydliga skillnader mellan de olika modellerna, särskilt när resonansytan är på den inre sidan. Tri-Maxwellianmodellerna visar en klar förbättring över bi-Maxwellianmodellerna jämfört med SELFO. Det finns dock vissa särdrag i resultaten från SELFO som ingen av de approximative modellerna förutsäger, eftersom modellerna försummar breda banor. En möjlig barriär i den radiella transporten har också blivit identifierat på fluxytor där asymmetrin i föroreningsdensiteten liknar asymmetrin i den magnetiska fältstyrkan. LFS bi-Maxwellianmodellen förutsäger den radiella positionen av barriären mest noggrant och tillförlitligt jämfört med SELFO.
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Haider, Asad Mahmood. "Measurement and control of impurity distribution in ultra pure gas delivery systems." Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186380.

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As the integrated circuit technology evolves to a greater complexity, the purity of process gases becomes a critical issue requiring extreme diligence in gas handling. There are three major challenges in gas contamination control: Gas purification, gas transport, and metrology of contaminants. In the area of gas purification, a novel integrated purification/filtration technique is developed--the reactive filter. The fundamental concept of a reactive filter involves impregnating the surface of an efficient particle filter with chemically reactive sites. The technique is capable of purifying inert as well as reactive gases to sub parts-per-billion levels of atmospheric contaminants at ambient temperature. Development and evaluation results for the reactive filter are presented. In the area of gas transport, this work has experimentally and theoretically studied the fundamental mechanisms of various sources of impurity intrusion and the fate of impurities in an ultra-pure gas transport system. The contamination sources investigated include impurity adsorption and desorption from transport lines and gas filters, impurity back-diffusion, and impurity permeation through polymeric materials. Fundamental kinetic parameters for impurity adsorption/desorption in stainless steel tubes and ceramic and metallic filters are reported. The desorption kinetics expression developed assumes two energy levels for the desorbing species. A systematic filter outgassing data analysis and normalization technique is presented along with a computer code to simulate a simple gas delivery system. The back-diffusion study developed a mathematical model to predict the extent of back-diffusion for various contaminants in high purity gas lines. Back-diffusion is very sensitive to system pressure. Impurity permeation study was conducted on Kel-F and PFA polymeric tubes. The effect of both temperature and pressure on the permeation coefficients was investigated. In the area of metrology, state-of-the-art analytical tools and techniques like Atmospheric Pressure Ionization Mass Spectroscopy (APIMS) were employed to detect and measure trace impurity levels. APIMS has the advantage of short response times and low parts-per-trillion level detection limit for most impurities of interest.
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Dal, Martello Elena. "Impurity distribution and reduction behaviour of quartz in the production of high purity silicon." Doctoral thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-17363.

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The production of solar grade silicon is based on the use of expensive high purity carbon and quartz feedstock as well as various silicon refining techniques. Impurities in the feedstock materials enter the silicon during the carbothermic reduction of quartz. The knowledge of the impurity distribution/removal in the feedstock and in the carbothermic reduction process is necessary for targeting less pure and cheaper raw materials. The aim of the present study is to investigate the impurity distribution and behavior in quartz feedstock throughout the metallurgical production of silicon; in particular four areas were investigated: 1) removal of mineral inclusions from quartz prior to carbothermic reduction by means of selective fragmentation; 2) effect of pellets, lumps on the silicon production reactions; 3) high temperature properties of quartz under reducing conditions; 4) distribution of contaminants from quartz to the gas phase during quartz reduction. Pellets and lumpy charge, hydrothermal quartz and quartzite were studied. Because of the complex objective of this study, several experimental techniques as well as characterization methods were used: 1) a novel refining route for hydrothermal quartz based on electrical fragmentation, was tested in a laboratory scale to investigate the advantages of using electric fragmentation in terms of cracks distribution, mineral liberation and fragment morphology; 2) mixtures of quartz and silicon carbide in form of pellets or lumps were heated to 2000 °C for 1 h in graphite crucibles in an inductive furnace to compare the properties of pellets and lumps during the silicon production reaction; 3) quartz pieces were heated in CO(g) atmosphere in a sessile drop experiment to study the ability of different types of quartz to produce SiO(g); 4) mixtures of quartz and silicon and quartz and silicon carbide, in form of lumps or pellets, were heated in graphite crucibles to 1650 °C and 1850 °C to investigate which gaseous compounds form other than SiO(g) during quartz reduction, and to which extent. EPMA was used to investigate the morphology of the reacted charge, XRD to identify different phases in a mixture, XRF to quantify elements in a mixture of phase. ICP-MS was used to investigate the impurity content in the charge and reaction products. It was observed that electrical fragmentation efficiently liberates mineral inclusions in the quartz matrix, and that the use of an inexpensive separation technique such as sieving is well suited to separate these minerals. Pellets and lumps behave differently when quartz and silicon carbide are heated to 2000°C in a reducing atmosphere. More silicon is produced with lumps, i.e. quartz reacts faster to SiO(g,) and more SiO(g) is lost when pellets are used. The rate of formation of SiO(g) is enhanced when the quartz contains cracks and fluid inclusions. It was found that during quartz reduction gaseous compounds leave the quartz but to various extents: the average measured volatility of B, P, K, Fe, Al, Mn, Zn, Pb is respectively 11 %, 25 %, 26 %, 45 %, 1 %, 38 %, 10 % and 36%. Liquid inclusions, common in lumps of hydrothermal quartz, enhance the distribution of the contaminants to the gas phase. The gaseous compounds which form may be entrapped by the condensation process, circulate in the furnace and eventually end up in the silicon.
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Garcia, Jonathan C. "Alternate configurations for blocked impurity band detectors." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FGarcia.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, Dec. 2004.
Thesis Advisor(s): Nancy M. Haegel, Gamani Karunasiri. Includes bibliographical references (p. 43-45). Also available online.
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Erwin. "Electron eigenvalues and eigenfunctions for a nanochannel with a finite rectangular barrier." Virtual Press, 1994. http://liblink.bsu.edu/uhtbin/catkey/917032.

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Electron scattering by a single or multiple impurities affects the quantizaton of conductance of a semiconductor nanochannel. The theoretical model of electron transport in a hardwall nanostructure with an impurity requires an analysis of the electronic transverse energy levels, eigenfunctions and hopping integrals resulting from cross channel or transverse confinement. Theoretical equations for the electronic transverse energy levels, wavefunctions and hopping integrals in the case of a repulsive, finite strength rectangular barrier arbitrarily positioned in the nanochannel are presented. The effects of size, strength and location of the impurity are discussed.In order to find the electronic transverse energy levels, wavefunctions and hopping integrals, two FORTRAN computer programs were developed. The first, called Program Data Input, writes the computational parameters to a data file. The second, Program Single Impurity, uses this data file in performing the calculations of the electronic transverse energy levels, eigenfunctions and hopping integrals.
Department of Physics and Astronomy
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Wei, Lun-Cun. "Etude de l'incorporation de b, c et o dans gaas prepare par la methode de czochralski (lec), en utilisant l'analyse par activation avec les particules chargees." Paris 6, 1987. http://www.theses.fr/1987PA066031.

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L'incorporation de b et c est d'autant plus faible que la teneur en eau de l'encapsulant (b::(2)o::(3) fondu) est plus grande. B et o segregent toujours en queue de lingot, alors que c segrege en tete dans les lingots riches en gallium et en queue dans les lingots riches en arsenic. Par ailleurs, le coefficient de segregation de b, tout en restant toujours inferieur a 1, prend des valeurs differentes suivant la stoechiometrie de la charge initiale. Ces resultats ouvrent la voie, en relation avec des mesures complementaires (electriques, optiques), d'etudes permettant de preciser l'influence de b, c et o sur les proprietes electroniques de gaas
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Kim, Kwang-Joo. "Impurity distributions in crystalline solid layer in melt crystallization /." Aachen : Shaker, 2002. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=009698552&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.

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Fornara, Pascal. "Modélisation et simulation numérique de la croissance des siliciures pour la microélectronique." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10082.

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La miniaturisation des transistors mos n'est plus envisageable sans une etape de metallisation auto-alignee des contacts source/drain et grille (procede salicide: self aligned silicide). Dans les technologies mos actuelles, le siliciure le plus couramment utilise est le disiliciure de titane: tisi#2. La siliciuration ayant une influence a la fois sur les dopants et sur la topographie, elle a un impact evident sur les dispositifs. Afin de garantir des simulations electriques precises, la modelisation des procedes technologiques submicroniques doit donc etre capable de prendre en compte cette etape. Dans ce travail, nous avons developpe un modele general de croissance des siliciures et nous l'avons implemente dans un simulateur de procede bidimensionnel. Nous avons demontre qu'il etait possible de simuler la croissance d'un siliciure aussi bien par diffusion du silicium que par diffusion du metal, ainsi que la siliciuration par depot selectif en phase vapeur. Les parametres du modele ont ete ajustes afin d'obtenir des cinetiques de croissance du tisi#2 en bon accord avec les resultats experimentaux. Nous avons montre que notre modele permettait de rendre compte d'effets topographiques bidimensionnels (absence de croissance sous l'espaceur, courbure de la couche de tisi#2 sur les grilles de polysilicium,), a condition de faire dependre certains parametres des contraintes mecaniques generees pendant la croissance de la couche. L'influence de la siliciuration sur la redistribution des dopants a ete analysee ; la simulation a confirme que la segregation du bore a l'interface tisi#2/si etait responsable de la degradation des resistances d'acces des contacts siliciures sur silicium dope au bore. L'injection de lacunes pendant la siliciuration a egalement ete calibree grace aux resultats experimentaux et, par des simulations de procedes et de dispositifs, nous avons montre que ce phenomene pouvait induire une redistribution des dopants a longue distance. L'outil que nous avons developpe apporte donc une aide a l'optimisation du procede de siliciuration dans les technologies silicium
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Benkherourou, Ouahab. "Conception et mise au point d'un analyseur hemispherique en vue de spectroscopies d'electrons resolues angulairement : caracterisation d'interfaces si/sio::(2) et si/sio::(x)n::(y) obtenues par implantation ionique a faible energie." Université Louis Pasteur (Strasbourg) (1971-2008), 1987. http://www.theses.fr/1987STR13014.

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Dans la region interfaciale, on retrouve toutes les configurations possibles de liaisons autour du tetraedre de si. Les profils de concentration de ces especes different selon que l'on fait l'oxydation ou l'oxynitruration. La distribution de ces especes a l'interface suit le modele theorique r. B. M. (random bonding model). Ce modele permet de comprendre la morphologie de l'interface et donc d'etablir la nature des liaisons chimiques entre les differents atomes (si-o-si et si-n-si)
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Hussain, Tahir. "Novel impurity distributions in GaAs devices by focused ion beam implantation." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241086.

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Books on the topic "Impurity distribution"

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International Conference on Shallow Impurities in Semiconductors (5th 1992 Kobe, Japan). Shallow impurities in semiconductors: Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors : physics and control of impurities, Kobe, Japan, 5 to 8 August 1992. Edited by Taguchi Tsunemasa. Brookfield, Vt: Trans Tech Publications, 1993.

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International Conference on Shallow Impurities in Semiconductors (5th 1992 Kobe, Japan). Shallow impurities in semiconductors: Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors : "Physics and Control of Impurities", International Conference Center, Kobe, Japan, 5 to 8 August 1992. Edited by Taguchi Tsunemasa. Aedernabbsdorf, Switzerland: Trans Tech Publications, 1993.

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Berman, Lev Solomonovich. Purity control of semiconductors by the method of capacitance transient spectroscopy. St. Petersburg: "Electronic Integral Systems", 1995.

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S, Ashok, ed. Defect and impurity engineered semiconductors II: Symposium held April 13-17, 1998, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 1998.

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Impurities in semiconductors: Solubility, migration, and interactions. Boca Raton: CRC Press, 2004.

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Dreyhsig, Jörg. The multiplet problem of 3d transition metal impurities in semiconductors: General aspects and the specific properties of semiconductors doped with cobalt. Berlin: W & T Verlag, 1994.

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Orton, J. W. The electrical characterization of semiconductors: Measurement of minority carrier properties. London: Academic Press, 1990.

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Optical absorption of impurities and defects in semiconducting crystals: Hydrogen-like centres. Heidelberg: Springer, 2010.

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Impurities Confined in Quantum Structures (Springer Series in Materials Science). Springer, 2004.

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S, Ashok, ed. Defect and impurity engineered semiconductors and devices: Symposium held April 17-21, 1995, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1995.

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Book chapters on the topic "Impurity distribution"

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Chin, S. A., and E. Krotscheck. "Impurity Distribution in Helium Droplets." In Recent Progress in Many-Body Theories, 85–92. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1937-9_8.

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Galsin, Joginder Singh. "Conduction Electron Distribution in Metallic Alloys." In Impurity Scattering in Metallic Alloys, 239–60. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-1241-7_10.

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Vykhodets, V. B., T. E. Kurennykh, and N. U. Tarenkova. "Study of Distribution of Impurity Atoms in Metallurgical Macrodefects." In Diffusion in Solids and Liquids III, 707–12. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-51-5.707.

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Parfeniev, R., D. Shamshur, L. L. Regel, and S. Nemov. "Impurity Distribution and Superconducting Properties of Pbte:T1 Crystals Grown in a Centrifuge." In Centrifugal Materials Processing, 109–14. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5941-2_9.

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Edwards, Les. "Impurity Level Distribution in GPC and CPC and Impact on Anode Properties." In Light Metals 2014, 1089–98. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118888438.ch182.

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Edwards, Les. "Impurity Level Distribution in GPC And CPC and Impact on Anode Properties." In Light Metals 2014, 1093–98. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-48144-9_182.

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Alexeyev, Andrey P. "Non-Destructive Determination of Ion-Implanted Impurity Distribution in Silicon by EPMA." In Mikrochimica Acta, 229–33. Vienna: Springer Vienna, 1992. http://dx.doi.org/10.1007/978-3-7091-6679-6_24.

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Farbshtein, I. I., R. V. Parfeniev, S. V. Yakimov, L. L. Regel, Ramnath Derebail, and W. R. Wilcox. "Analysis of Impurity Distribution by Galvanomagnetic Method in InSb Obtained under High Gravity Conditions." In Materials Processing in High Gravity, 89–93. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2520-2_9.

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Kitamura, O., and H. Kubota. "Impurity Distribution in the ISP Process at the Harima Works of Sumitomo Metal Mining Co., Ltd." In Lead-Zinc 2000, 467–80. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118805558.ch30.

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Naumova, I. I., N. F. Evlanova, O. A. Gliko, A. A. Lukashev, and S. V. Lavrishchev. "Ingrown Regular Domain Structure and Impurity Distribution in LiNbo3Doped with a Rare Earth (Nd,Eu) and Magnesium." In Growth of Crystals, 197–205. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0537-2_16.

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Conference papers on the topic "Impurity distribution"

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Shuda, Zhang. "The surface impurity distribution on synthetic diamond." In High-pressure science and technology—1993. AIP, 1994. http://dx.doi.org/10.1063/1.46089.

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Munakata, Tetsuo, Satoshi Someya, and Ichiro Tanasawa. "The Effect of an External Magnetic Field on the Impurity Distribution in an RF-FZ Silicon Crystal During the Growth Process." In ASME 2000 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/imece2000-2074.

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Abstract The impurity concentration distribution in a silicon crystal during the floating zone (FZ) growth process under radio-frequency (RF) heating and the effect of an externally applied magnetic field on the impurity distribution in the crystal have been investigated numerically. The main purpose of the study is to clarify the characteristics of the impurity distribution in the silicon crystal under the RF-FZ crystal growth process, and the effect of an externally applied magnetic field on such an impurity distribution. The numerically obtained characteristics on impurity distribution in the crystal are as follows. In the case of excluding the external magnetic field, impurity concentration in the crystal varies due to the fluctuation of the melt flow. If we apply an external magnetic field, such impurity variation in the crystal disappears due to the stabilizing effect of the external magnetic field. Further, the crystal growth rate is decreased, the impurity concentration in the crystal is also decreased. The impurity segregation coefficient does not affect the impurity distribution in the crystal.
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Zhao, Yanyan, Yunfei Chen, Kedong Bi, Zan Wang, Yanyan Ge, and Jiapeng Li. "The Effects of Different Doping Pattern on the Lattice Thermal Conductivity of Solid Ar." In ASME 2009 Second International Conference on Micro/Nanoscale Heat and Mass Transfer. ASMEDC, 2009. http://dx.doi.org/10.1115/mnhmt2009-18208.

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Equilibrium molecular dynamics method is performed to calculate the lattice thermal conductivities of solid argon doped with krypton in different geometrical distributions. The effects of centralization doping, monolayer doping, uniform doping, non-uniform doping, random doping and cubic pattern doping on the thermal conductivity of argon crystal are investigated respectively. The results demonstrate that, the uniformity of the impurity distribution plays a critical role in the thermal conductivity of solid argon. It is found that the lowest thermal conductivity could be achieved by organizing the impurity in a cubic pattern. Because both the phonon-impurity scattering and the stronger phonon-interface scattering can destroy the coherence of phonons. Calculation results suggest that the minimum thermal conductivity value among six different kinds of impurity arrangements is roughly 1.90 times lower than that of pure argon under the temperature of 17K. However, the values of thermal conductivity are almost the same as those of pure argon at higher temperatures.
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Tryznadlowski, Bart, Armin Yazdani, Renyu Chen, and Scott T. Dunham. "Coupled modeling of evolution of impurity/defect distribution and cell performance." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317604.

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Nelayev, Vladislav V., G. V. Litvinovich, and Bronislav B. Sevruk. "Impurity distribution in layered semiconductor structures by means of IR nondestructive diagnostics." In International Workshop on New Approaches to High Tech Materials: Nondestructive Testing and Computer Simulations in Materials Scienc, edited by Alexander I. Melker. SPIE, 1998. http://dx.doi.org/10.1117/12.299572.

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Lu, Xiang, Jun Shao, Yanfeng Wei, and Jianrong Yang. "Layer-by-layer photoluminescence and photoreflectance analysis of impurity distribution in HgCdTe." In 2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010). IEEE, 2010. http://dx.doi.org/10.1109/icimw.2010.5613074.

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Sun, L., C. C. Berndt, R. S. Lima, A. Kucuk, and K. A. Khor. "Effects of Spraying Parameters on Phase Formation and Distribution in Plasma-Sprayed Hydroxyapatite Coatings." In ITSC 2000, edited by Christopher C. Berndt. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.itsc2000p0803.

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Abstract Calcined spray-dried hydroxyapatite (Ca10(PO4)(OH)6; i.e., HA) powders were atmospherically plasma sprayed (APS) using various process parameters. The resulting phases within the coating surface and the interface between the coating and the substrate were analyzed using X-ray diffraction (XRD) methods. This XRD revealed the presence of both amorphous (i.e., amorphous calcium phosphate: ACP) and crystalline phases. The crystalline phases included both HA and some impurity phases from the decomposition of HA, such as tricalcium phosphate (α-TCP and β-TCP), tetracalcium phosphate (TTCP) and calcium oxide (CaO). The crystallinity of HA decreased with increasing spray power and stand-off distance (SOD). The percentage of all impurity phases increased with the spray power. The percentage of both TCP and TTCP decreased with the SOD while the CaO percentage increased. In addition, the percentage of ACP and CaO were higher in the interface than at the surface of the coating while the percentage of TCP and TTCP exhibited the opposite effect.
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Jiedi, Sun, and Wen Jiangtao. "Recognition of impurity in ampoules based on wavelet packet decomposition energy distribution and SVM." In 2009 2nd IEEE International Conference on Computer Science and Information Technology. IEEE, 2009. http://dx.doi.org/10.1109/iccsit.2009.5234594.

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Osin, Dmitry, Kan Zhai, Michael Beall, Nathan Bolte, and Yuri Ralchenko. "Spectroscopic study of impurity ion radial distribution in an advanced beam-driven field reversed configuration." In 2016 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2016. http://dx.doi.org/10.1109/plasma.2016.7533999.

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Salvatori, S., M. C. Rossi, Fabrizio M. Galluzzi, F. Somma, and Rosa M. Montereali. "Impurity and stress distribution in diamond films investigated by laser-excited Raman and luminescence spectroscopy." In Lasers in Synthesis, Characterization, and Processing of Diamond, edited by Vitali I. Konov and Victor G. Ralchenko. SPIE, 1998. http://dx.doi.org/10.1117/12.328194.

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