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Journal articles on the topic 'Impedance amplifier'

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Author: Grafiati
Published: 30 May 2022
Last updated: 31 May 2022

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1

Hu, Pengfei, Li Shen, Feng Han, Fei Yang, Maojiang Song, Li Zhang, and Liping Liu. "Development of the data acquisition system for terahertz spectrometer." Transactions of the Institute of Measurement and Control 40, no. 3 (April 6, 2017): 805–11. http://dx.doi.org/10.1177/0142331217690475.

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In most Terahertz time-domain spectrometer (THz-TDS) experiments, the lock-in amplifier works with trans-impedance pre-amplifier to amplitude the terahertz pulse accepted from detector. This paper discusses the development of data acquisition system for the transmission THz-TDS. In this system, the cross-correlation software algorithm in SR830 lock-in amplifier from Stanford Research Systems, that is usually used in THz-TDS, has been replaced by parallel hardware algorithm of Field Programmable Gate Array (FPGA) chip with the parallel processing ability. This chip has a faster processing speed and higher accuracy than others. A 24 bit Delta-Sigma Analog Digital (AD) was used in place of the 16 bit successive approximation ADC of SR830. The new AD convertor can reduce the complexity of trans-impedance pre-amplifier circuit and replace the SR555 current amplifiers that designed to work with SRS lock-in amplifiers. Besides trans-impedance pre-amplifier circuit, all function circuits, such as low-pass digital filter, phase-locked loop, Direct Digital Synthesis (DDS) reference source and the core algorithms, are integrated in a FPGA chip, which make the new designed lock-in amplifier with a small volume reduce a dozen times SR830 size.
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2

ABRAMOVITZ, ALEXANDER. "SEVERAL ALTERNATIVE DERIVATIONS OF BLACKMAN'S IMPEDANCE RELATION." Journal of Circuits, Systems and Computers 18, no. 05 (August 2009): 909–21. http://dx.doi.org/10.1142/s0218126609005435.

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The Blackman's impedance relation formula holds several unique and important features. First and most important is generality. The formula is truly universal and could be applied regardless of feedback topology. The impedances of canonical cases could be presented as special cases of Blackman's impedance relation. This paper revisits the concepts of Blackman's impedance relation. Several alternative derivation approaches are suggested to stand in accord with the gain evaluation procedure. The derivation of the Blackman's impedance relation formula by Superposition, Thevenin, Trans-Admittance and Trans-Impedance methods are offered. The paper extends the ideas and completes the methodology of unified approach to analysis of feedback amplifiers presented earlier. The paper also discusses some additional features of the feedback amplifier model. The paper advocates that the described method of obtaining the loop-gain makes a real difference in application of the formula. Overcoming the loop-gain computational difficulties helps reestablish the Blackman's impedance relation as a viable tool in analysis of feedback circuits.
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3

Fuada, Syifaul, and Trio Adono. "Noise and Bandwidth in Operational Amplifiers for Conventional TIAs used in Visible Light Communication." International Journal of Recent Contributions from Engineering, Science & IT (iJES) 6, no. 2 (August 29, 2018): 37. http://dx.doi.org/10.3991/ijes.v6i2.8171.

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Trans-impedance amplifiers play an essential role in the physical layer of visible light communication systems. They are applied in the first stage of a visible light communication receiver. This short paper is a follow-up from a previous study about the bandwidth and noise of Op-Amp based trans-impedance amplifier as used in visible light communication systems through two approaches: calculation and simulation. The results of both calculation and simulation are then compared through several scenarios. In this study, the <em>Orozco </em>approach is used as a fundamental reference in calculating the trans-impedance amplifier’s bandwidth and noise. Whereas for simulation, we used TINATM-SPICE®.
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4

Barthélemy, H. "Impedance projection based transconductance amplifier." Electronics Letters 39, no. 14 (2003): 1027. http://dx.doi.org/10.1049/el:20030697.

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5

Jeong, Jinho, Yeongmin Jang, Jongyoun Kim, Sosu Kim, and Wansik Kim. "Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines." Applied Sciences 11, no. 19 (September 28, 2021): 9017. http://dx.doi.org/10.3390/app11199017.

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In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.
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6

Shi, Weimin, and Songbai He. "Design of a Tri-Band Doherty Amplifier Based on Generalized Impedance Inverter." Journal of Circuits, Systems and Computers 28, no. 10 (September 2019): 1950170. http://dx.doi.org/10.1142/s0218126619501706.

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This paper introduces a methodology for implementing multi-band Doherty power amplifiers. Traditionally, a 90∘ impedance inverter line is required in Doherty architecture. In this contribution, a generalized impedance inverter line is utilized to construct multi-band Doherty power amplifiers. A tri-band Doherty power amplifier operating at 1.15, 1.85 and 2.55[Formula: see text]GHz is designed to validate the proposed method. Measurement results show the fabricated Doherty power amplifier achieves 6[Formula: see text]dB output back-off drain efficiencies of 62.3%, 49.3% and 50.5% at 1.15, 1.85 and 2.55[Formula: see text]GHz, respectively. The peaking output power of the fabricated tri-band Doherty power amplifier is 43.2, 43.7 and 43.8[Formula: see text]dBm with drain efficiencies of 64.5%, 62.2% and 64.5% at three working frequency points, respectively. Furthermore, when the designed Doherty power amplifier is driven by a 20[Formula: see text]MHz wideband LTE signal with peak-to-average-power ratio of 6.4[Formula: see text]dB, adjacent channel power ratios of [Formula: see text]29.4 and [Formula: see text]57.1[Formula: see text]dBc are achieved before and after digital pre-distortion at 1.85[Formula: see text]GHz.
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7

Abdulkhaleq, Ahmed M., Maan A. Yahya, Neil McEwan, Ashwain Rayit, Raed A. Abd-Alhameed, Naser Ojaroudi Parchin, Yasir I. A. Al-Yasir, and James Noras. "Recent Developments of Dual-Band Doherty Power Amplifiers for Upcoming Mobile Communications Systems." Electronics 8, no. 6 (June 6, 2019): 638. http://dx.doi.org/10.3390/electronics8060638.

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Power amplifiers in modern and future communications should be able to handle different modulation standards at different frequency bands, and in addition, to be compatible with the previous generations. This paper reviews the recent design techniques that have been used to operate dual-band amplifiers and in particular the Doherty amplifiers. Special attention is focused on the design methodologies used for power splitters, phase compensation networks, impedance inverter networks and impedance transformer networks of such power amplifier. The most important materials of the dual-band Doherty amplifier are highlighted and surveyed. The main problems and challenges covering dual-band design concepts are presented and discussed. In addition, improvement techniques to enhance such operations are also exploited. The study shows that the transistor parasitic has a great impact in the design of a dual-band amplifier, and reduction of the transforming ratio of the inverter simplifies the dual-band design. The offset line can be functionally replaced by a Π-network in dual-band design rather than T-network.
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8

Richelli, Anna, Luigi Colalongo, and Zsolt Kovacs-Vajna. "EMI Susceptibility of the Output Pin in CMOS Amplifiers." Electronics 9, no. 2 (February 9, 2020): 304. http://dx.doi.org/10.3390/electronics9020304.

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Measurements in commercial devices demonstrate a considerable susceptibility of the operational amplifiers to the electromagnetic interferences coupled to their output pin. This paper investigates some basic architectures starting from single stage amplifiers up to a whole operational amplifier. The result is a correlation between the different amplifier configurations, the output impedance and the susceptibility to the interferences. The simulations are perfomed by using the standard CMOS UMC 180nm technology and by running the netlist of the schematics extracted from the layout.
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9

Xia, J. S., and J. C. Rogers. "A high output impedance recording amplifier." IEEE Transactions on Consumer Electronics 37, no. 4 (1991): 897–904. http://dx.doi.org/10.1109/30.106956.

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10

Volkers, Henrik, and Thomas Bruns. "The influence of source impedance on charge amplifiers." ACTA IMEKO 2, no. 2 (January 15, 2014): 56. http://dx.doi.org/10.21014/acta_imeko.v2i2.81.

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This contribution discusses the influence of the source impedance on the complex sensitivity of a charge amplifier (CA). During calibration of a CA with varying source impedances deviations at higher frequencies were observed, which if not properly taken into account may generate systematic errors beyond the limits of the measurement uncertainty budget. The contribution discusses a model to describe the effect as well as an extension to established CA calibration procedures which allow to quantify and correct the effect.
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11

Xu, Weilin, Taotao Wang, Xueming Wei, Hongwei Yue, Baolin Wei, Jihai Duan, and Haiou Li. "Low Noise, High Input Impedance Digital-Analog Hybrid Offset Suppression Amplifier for Wearable Dry Electrode ECG Monitoring." Electronics 9, no. 1 (January 16, 2020): 165. http://dx.doi.org/10.3390/electronics9010165.

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The portable real-time electrocardiogram (ECG) is a convenient and promising electronic device for cardiovascular diseases patients. However, unlike wet gel electrodes in traditional clinical applications, dry electrodes are competent for comfortable long-time wearing and can prevent skin ulceration. Its ultra-high source impedance and electrode offset (EOS) make traditional chopper amplifiers with low input impedance and limited EOS range difficult to apply to this area. To overcome these challenges, this paper proposes a novel chopper amplifier topology. This architecture includes a gain control loop, a ripple reduction loop, and a DC-servo loop (DSL). The proposed sampling input stage and digital-analog hybrid DSL are employed to boost input impedance and extend the EOS handing range. Designed with a 0.18 µm 1P6M 1.8 V CMOS salicide process, the proposed chopper capacitively coupled instrumentation amplifier achieves an ultra-high input impedance of 120 GΩ (<0.05 Hz) or 2.1 GΩ (0.6~250 Hz), an EOS handing range of ±325 mV and a low noise of 1.9 μVrms at 0.6~250 Hz. It occupies an area of 0.36 mm2 and only consumes a quiescent current of 11 μA.
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12

Al-Kofahi, Idrees S., Zaid Albataineh, and Ahmad Dagamseh. "A two-stage power amplifier design for ultra-wideband applications." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 1 (February 1, 2021): 772. http://dx.doi.org/10.11591/ijece.v11i1.pp772-779.

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In this paper, a two-stage 0.18 μm CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz based on common source inductive degeneration with an auxiliary amplifier is proposed. In this proposal, an auxiliary amplifier is used to place the 2nd harmonic in the core amplified in order to make up for the gain progression phenomena at the main amplifier output node. Simulation results show a power gain of 16 dB with a gain flatness of 0.4 dB and an input 1 dB compression of about -5 dBm from 3 to 5 GHz using a 1.8 V power supply consuming 25 mW. Power added efficiency (PAE) of around 47% at 4 GHz with 50 Ω load impedance was also observed.
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13

Cioffi, K. R. "Broad-band distributed amplifier impedance-matching techniques." IEEE Transactions on Microwave Theory and Techniques 37, no. 12 (1989): 1870–76. http://dx.doi.org/10.1109/22.44096.

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14

Singh, V. "Floating operational transconductance amplifier based grounded impedance." IEE Proceedings - Circuits, Devices and Systems 150, no. 1 (2003): 27. http://dx.doi.org/10.1049/ip-cds:20030367.

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15

Hamill, D. C. "Impedance plane analysis of class DE amplifier." Electronics Letters 30, no. 23 (November 10, 1994): 1905–6. http://dx.doi.org/10.1049/el:19941361.

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16

SHARMA, R. K., R. SENANI, D. R. BHASKAR, A. K. SINGH, and S. S. GUPTA. "ELECTRONICALLY-CONTROLLABLE FLOATING INDUCTOR USING OPERATIONAL MIRRORED AMPLIFIER." Journal of Circuits, Systems and Computers 18, no. 01 (February 2009): 59–66. http://dx.doi.org/10.1142/s0218126609004922.

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The operational mirrored amplifiers (OMA) were introduced as useful building blocks for facilitating an easy realization of floating impedances (in conjunction with RC elements) as compared to other approaches of floating impedance simulation. In this paper, we present a new formulation, for realizing a floating inductance (FI) using an OMA which takes into account the dominant pole of the op-amp employed in the OMA and hence, does not require any external capacitor. Moreover, when the only external resistor employed is replaced by an electronically-controlled resistance, the resulting circuit permits an electronically controllable floating inductance. The workability of the proposed FI has been demonstrated by PSPICE simulations.
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17

Chen, Ruitao, Ruchun Li, Shouli Zhou, Shi Chen, Jianhua Huang, and Zhiyu Wang. "An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model." Electronics 8, no. 1 (January 16, 2019): 99. http://dx.doi.org/10.3390/electronics8010099.

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This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.
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18

Lin, Jium Ming, and Po Kuang Chang. "A Novel Remote Health Monitor with Replaceable Non-Fragile Bio-Probes on RFID Tag." Applied Mechanics and Materials 145 (December 2011): 415–19. http://dx.doi.org/10.4028/www.scientific.net/amm.145.415.

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Conventional bio-probes are produced on a silicon substrate, they are not only fragile but unable to dispose according to the profile of human body in a large area manner, and thus the contact resistance between probe and skin may be increased. Besides, the signal processing devices are required to improve both S/N ratio and impedance matching problems. This paper proposes a novel remote human health monitor and an active RFID tag with replaceable non-frangible probes and thin-film-transistor (TFT) amplifiers. The probes are made of bio-degradable polymer (photo resist) and covered with bio-compatible TiN. In addition, we use two pieces of double sides conducting tapes to connect both TFT amplifiers and probe modules. Thus the probe module can be replaced easily by peeling the used probe module away from the double sides conducting tapes to supply a new one. Since the tag is a flexible plastic substrate, e, g. PT, PET and PI, so the probes are easier to deploy and conform to the human body profile. In addition, the signal can be amplified by the TFT amplifier nearby to improve both S/N ratio and impedance matching. Thus the human health conditions can be remotely monitored by measuring various acupuncture impedances via the active RFID tag. The active RFID monitoring range is 15m by using 2.45 GHz ISM band, the probe resistance and parasitic capacitance are as 2735 Ω and 60.7 pf, respectively. Since the typical human acupuncture point resistance is about 40-120KΩ, thus the proposed device and system can be applied.
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19

Aneja, Aayush, and Xue Li. "Design and Analysis of a Continuously Tunable Low Noise Amplifier for Software Defined Radio." Sensors 19, no. 6 (March 13, 2019): 1273. http://dx.doi.org/10.3390/s19061273.

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This paper presents the design and analysis of a continuously tunable low noise amplifier (LNA) with an operating frequency from 2.2 GHz to 2.8 GHz. Continuous tuning is achieved through a radio frequency impedance transformer network in the input matching stage. The proposed circuit consists of four stages, namely transformer stage, tuning stage, phase shifter and gain stage. Frequency tuning is controlled by varying output current through bias voltage of tuning stage. The circuit includes an active phase shifter in the feedback path of amplifier to shift the phase of the amplified signal. Phase shift is required to further achieve tunability through transformer. The LNA achieves a maximum simulated gain of 18 dB. The LNA attains a perfect impedance match across the tuning range with stable operation. In addition, it achieves a minimum noise figure of 1.4 dB.
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20

B., Rashmi S., and Siva S. Yellampalli. "Design of a 60 GHz power amplifier in a 45nm CMOS." International Journal of Reconfigurable and Embedded Systems (IJRES) 8, no. 1 (March 1, 2019): 14. http://dx.doi.org/10.11591/ijres.v8.i1.pp14-26.

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<span lang="EN-US">This Paper presents a design and implementation of class-AB power amplifier which works at 60GHz unlicensed frequency band. This power amplifier uses a MOSFET from gpdk45 technology library. The design simulation is done by cadence Analog Design Environment. This proposed power amplifier yields a power added efficiency of 23.45% and a power gain S21 of 10dB at 60GHz. The output impedance of proposed power amplifier is needs to be matched with 73Ω antenna impedance. The S22 output matching of the simulated power amplifier is -18dB at 60GHz. The input side is matched to arbitrary impedance of 50Ω the resulting S11 of simulated result is noted to be -15dB at 60GHz. The proposed circuit has a noise figure of 3.85dB. The proposed circuit has a Pout-1dB of 8.5dBm. the designed class AB power amplifier is an important component in 60GHz transceiver. The layout of the associated circuit is drawn with the total size of 0.107um<sup>2</sup>.</span>
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21

Choi, Ui-Gyu, and Jong-Ryul Yang. "A 120 W Class-E Power Module with an Adaptive Power Combiner for a 6.78 MHz Wireless Power Transfer System." Energies 11, no. 8 (August 10, 2018): 2083. http://dx.doi.org/10.3390/en11082083.

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In this article, a highly efficient power module is presented with two class-E power amplifiers and an adaptive power combiner for transmitting output powers >100 W at 6.78 MHz in a wireless power transfer system. The losses caused by the combiners and interstage matching circuits or mismatching between the amplifier, and the combiners can significantly reduce the overall efficiency of the power module. To achieve an efficient combination of the output amplifier signals, the adaptive power combiner is proposed based on the consideration of the optimum load impedance characteristics of the power amplifiers. The input impedance of the combiner is designed using series capacitors and resistors between the two input ports of the combiner and the two output signals of the class-E amplifiers at the optimum load condition. The output performances of the proposed module can decrease based on the component mismatch between the two power amplifiers. The proposed power module was implemented on an FR4 PCB, with a 15 mm metal heat sink, and demonstrated an output power of 123.3 W, a power-added efficiency of 85.7%, and a power gain of 25.6 dB at 6.78 MHz. The second harmonic suppression of the module was 37 dBc.
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22

Kalpana, G., Raja Krishnamoorthy, and P. T. Kalaivaani. "Design and implementation of low-power CMOS biosignal amplifier for active electrode in biomedical application using subthreshold biasing strategy." International Journal of Wavelets, Multiresolution and Information Processing 18, no. 01 (May 29, 2019): 1941017. http://dx.doi.org/10.1142/s0219691319410170.

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Active Electrodes (AEs) are electrodes which have integrated bio-amplifier circuitry and are known to be less susceptible to motion artifacts and environmental interference. In this work, a low-power and high-input impedance amplifier for active electrode application is implemented based on subthreshold biasing strategies. In this proposed Application Specific Integrated Circuit (ASIC) device was versatile and numerical to achieve a high degree of programmability. It could be adapted to any other external part of one cochlear prosthesis, the sound analyzer that could be driven by a Digital Signal Processor (DSP). This research work also discusses the measurement of the electrode-skin impedance mismatch between two electrodes while concurrently measuring a bioelectrical signal without degradation of the performance of the amplifier, the efficient, noise-optimized analysis of bioelectrical signals utilizing two-wired active buffer electrodes. The reduction of power-line interference when using amplifying electrodes employing autonomous adaption of the gain of the subsequent differential amplification. The amplifier’s features include offset compensation, Common Mode Rejection Ratio (CMRR) improvement in software and a bandwidth extending down to DC. The proposed active electrode amplifier is designed using 90 nm CMOS technology. Simulation results exhibit up to the change in noise immunity and lessening in power utilization contrasted with the traditional bio-amplifier design at a similar delay.
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23

Kong, Wa, Jing Xia, Fan Meng, Chao Yu, Lixia Yang, and Xiaowei Zhu. "A Doherty Power Amplifier with Large Back-Off Power Range Using Integrated Enhancing Reactance." Wireless Communications and Mobile Computing 2018 (2018): 1–8. http://dx.doi.org/10.1155/2018/3968308.

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A symmetric Doherty power amplifier (DPA) based on integrated enhancing reactance (IER) was proposed for large back-off applications. The IER was generated using the peaking amplifier with the help of a desired impedance transformation in the low-power region to enhance the back-off efficiency of the carrier amplifier. To convert the impedances properly, both in the low-power region and at saturation, a two-impedance matching method was employed to design the output matching networks. For verification, a symmetric DPA with large back-off power range over 2.2–2.5 GHz was designed and fabricated. Measurement results show that the designed DPA has the 9 dB back-off efficiency of higher than 45%, while the saturated output power is higher than 44 dBm over the whole operation bandwidth. When driven by a 20 MHz LTE signal, the DPA can achieve good average efficiency of around 50% with adjacent channel leakage ratio of about –50 dBc after linearization over the frequency band of interest. The linearity improvement of the DPA for multistandard wireless communication system was also verified with a dual-band modulated signal.
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24

Shukla, Sachchida Nand, Syed Shamroz Arshad, and Geetika Srivastava. "NPN Sziklai pair small-signal amplifier for high gain low noise submicron voltage recorder." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (March 1, 2022): 11. http://dx.doi.org/10.11591/ijpeds.v13.i1.pp11-22.

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Small signal-to-noise ratio (SNR) and multiple noise sources, coupled with very weak signal amplitudes of bio signals make brain-computer interface (BCI) application studies a challenging task. The front-end recorder amplifiers receive very-weak signal (few μV) from high impedance electrodes and for efficient processing of such weak and low frequency (<1 kHz) signals a high gain amplifier with very low operating voltage and low total harmonic distortion (THD) is required. Existing amplifiers suffer from problem of high non-linearity and low common mode rejection. A good sense amplifier at predeceasing stage can solve this problem. Utilizing very high amplification factor of Sziklai Pair, this paper proposes two circuit topologies of common-emitter and common-collector negative-positive-negative (NPN) Sziklai Pair small signal amplifiers suitable for use in preamplifier stages of such signal acquisition circuit. Present study provides broad-spectrum of analysis of these amplifiers covering effect of additional biasing resistance RA, variation of ‘ideal forward maximum beta’ β, temperature dependency, noise sensitivity and phase variation. The tunable capability of first topology makes it a suitable candidate in wide variety of other applications. The first amplifier operates on very low input voltage range (0.1μV-6mV) whereas the second amplifier works on 100 μV-11 mV range of input voltage.
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25

Han, Kwonsang, Hyungseup Kim, Jaesung Kim, Donggeun You, Hyunwoo Heo, Yongsu Kwon, Junghoon Lee, and Hyoungho Ko. "A 24.88 nV/√Hz Wheatstone Bridge Readout Integrated Circuit with Chopper-Stabilized Multipath Operational Amplifier." Applied Sciences 10, no. 1 (January 5, 2020): 399. http://dx.doi.org/10.3390/app10010399.

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This paper proposes a low noise readout integrated circuit (IC) with a chopper-stabilized multipath operational amplifier suitable for a Wheatstone bridge sensor. The input voltage of the readout IC changes due to a change in input resistance, and is efficiently amplified using a three-operational amplifier instrumentation amplifier (IA) structure with high input impedance and adjustable gain. Furthermore, a chopper-stabilized multipath structure is applied to the operational amplifier, and a ripple reduction loop (RRL) in the low frequency path (LFP) is employed to attenuate the ripple generated by the chopper stabilization technique. A 12-bit successive approximation register (SAR) analog-to-digital converter (ADC) is employed to convert the output voltage of the three-operational amplifier IA into digital code. The Wheatstone bridge readout IC is manufactured using a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology, drawing 833 µA current from a 1.8 V supply. The input range and the input referred noise are ±20 mV and 24.88 nV/√Hz, respectively.
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26

Gajare, Milind, and Shedge D.K. "CMOS Trans Conductance based Instrumentation Amplifier for Various Biomedical Signal Analysis." NeuroQuantology 20, no. 5 (April 30, 2022): 53–60. http://dx.doi.org/10.14704/nq.2022.20.5.nq22148.

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Feed forward design techniques for the Trans-conductance operational amplifier removes the barriers of operating frequencies. It is now possible to design amplifiers with large the Trans-conductance that operates at Giga hertz frequency range. There are several Trans-conductance amplifiers used to design a medical and Industrial application that helps in processing various bio medical signals such as Electrocardiographs, Electroencephalographs, Electromyograms and several others. The proposed paper shows the implementation of an instrumentation amplifier using CMOS based the Trans-conductance operational amplifiers also the processing of biomedical ECG, EEG and EMG signals. The CMOS process technology helps to integrate complex circuits on minimal surface area. The Trans-conductance instrumentation operational amplifiers has features includes noise reduction, low DC offset, High output impedance and Common Mode rejection Ratio values. The circuit implementation and simulations has been done on Electronic Design and Automation tool with 0.13μm CMOS process technology.
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27

Vesterinen, V., J. Hassel, and H. Seppa. "Tunable Impedance Matching for Josephson Junction Reflection Amplifier." IEEE Transactions on Applied Superconductivity 23, no. 3 (June 2013): 1500104. http://dx.doi.org/10.1109/tasc.2012.2227653.

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28

Kazimierczuk, M. K., and X. T. Bui. "Class-E amplifier with an inductive impedance inverter." IEEE Transactions on Industrial Electronics 37, no. 2 (April 1990): 160–66. http://dx.doi.org/10.1109/41.52966.

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29

Kehinde, L. O. "The ‘Dozen-Impedance’ Operational Amplifier Module for Experimentation." International Journal of Electrical Engineering & Education 26, no. 3 (July 1989): 224–32. http://dx.doi.org/10.1177/002072098902600304.

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This paper presents a ‘dozen-impedance’ op. amp. configuration that can be used for a myriad laboratory experiments on op. amps. From the generated transfer function, a new formalized statement is presented from which the transfer function of op. amp. circuits that fall under this class can be obtained without the rigours of earlier well-known matrix techniques. Some experimental configurations are suggested.
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30

Grebel, J., A. Bienfait, É. Dumur, H. S. Chang, M. H. Chou, C. R. Conner, G. A. Peairs, R. G. Povey, Y. P. Zhong, and A. N. Cleland. "Flux-pumped impedance-engineered broadband Josephson parametric amplifier." Applied Physics Letters 118, no. 14 (April 5, 2021): 142601. http://dx.doi.org/10.1063/5.0035945.

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31

Lu, Ya-Peng, Quan Zuo, Jia-Zheng Pan, Jun-Liang Jiang, Xing-Yu Wei, Zi-Shuo Li, Wen-Qu Xu, et al. "An easily-prepared impedance matched Josephson parametric amplifier*." Chinese Physics B 30, no. 6 (June 1, 2021): 068504. http://dx.doi.org/10.1088/1674-1056/ac0420.

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32

Martinez Mendoza, Monica, Andreas Wentzel, Alejandro Alvarez Melcon, and Wolfgang Heinrich. "Advanced lumped-element filters for digital microwave power amplifiers." International Journal of Microwave and Wireless Technologies 7, no. 5 (June 29, 2015): 589–96. http://dx.doi.org/10.1017/s1759078715001063.

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In this paper, two compact lumped-element band pass reconstruction filters for digital microwave power amplifiers applications in the800 MHzband are presented. The filters, based on the trisection and quartet topologies, include cross-couplings which produce transmission zeros for maximum selectivity, and can be designed with practical element values. In contrast to common filter designs the input impedance characteristic is optimized broadband to values different from50 Ω, as required for proper amplifier operation. Both filters achieve an insertion loss of around0.8 dBand an equiripple bandwidth of240 MHz (trisection)and290 MHz (quartet), respectively, with improved out-of-band suppression. Results show that a considerable improvement in amplifier linearity and efficiency can be obtained with the new proposed filters, as compared with simpler filters traditionally used in power amplifier applications.
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33

Liu, Ling, Song Ye, Weimin Wang, and Wenying Ma. "A Compact 60GHz Power Amplifier in 65nm CMOS Technology." Journal of Physics: Conference Series 2221, no. 1 (May 1, 2022): 012037. http://dx.doi.org/10.1088/1742-6596/2221/1/012037.

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Abstract A compact 60GHz power amplifier chip in 65nm CMOS technology of three-stage common source structure is presented. The first two amplifiers offer sufficient gain to pre-amplify the small input power. The third stage amplifier uses two sets of differential pairs to achieve power synthesis. On-chip transformer coupling is adopted to realize inter-stage impedance matching as well as input and output matching. The compact structure of on-chip transformer can reduce the chip size and improve the integration degree. The measured small signal gain at 60GHz of 22.3dB, the saturation power of 20.2dBm, the output P-1dB of 17.3dBm, the PAE of 14%, and the core area is 0.19mm2. The power amplifier can be used in high-speed short-range wireless communication system to enhance communication data transmission capacity.
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34

Arnous, Mhd Tareq, Zihui Zhang, Felix Rautschke, and Georg Boeck. "Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer." International Journal of Microwave and Wireless Technologies 9, no. 6 (March 8, 2017): 1261–69. http://dx.doi.org/10.1017/s1759078717000125.

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In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.
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35

Zheng, Qiang, and Cheng Ma. "The Design of Lock-in Amplifier Based on DSP Builder." Advanced Materials Research 718-720 (July 2013): 733–38. http://dx.doi.org/10.4028/www.scientific.net/amr.718-720.733.

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Lock-in amplifier is widely used to detect weak signals from significant background noise. In this paper, an FPGA-based Lock-in amplifier is implemented on the DSP Builder platform to measure impedance between biological cells and electrodes. To improve the measuring accuracy, a narrow band low pass filter with low cut off frequency was implemented. This low pass filter consists of a five-stage cascaded integrator-comb filter, two half band filters and a FIR low pass filter. Simulation shows that with a system clock of 10MHz, the cut off frequency of the low pass filter is lower than 20Hz. Experiments demonstrate that the implemented lock-in amplifier is able to detect weak signal with strong noise, making it an attractive approach to implement lock-in amplifiers which is more flexible and can meet the needs for specified measurements.
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36

CHAUDHARY, MUHAMMAD AKMAL, JONATHAN LEES, JOHANNES BENEDIKT, and PAUL TASKER. "MULTI-TONE MEASUREMENT SYSTEM WITH THE STATE-OF-THE-ART ACTIVE IF AND RF LOAD-PULL CAPABILITY." Journal of Circuits, Systems and Computers 22, no. 07 (August 2013): 1350056. http://dx.doi.org/10.1142/s0218126613500564.

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This paper reports a refined multi-tone waveform measurement system for the robust characterization and optimization of nonlinear microwave devices when driven by broadband multi-tone stimuli. This enhanced system has the ability to present specific, constant broadband impedances, not only at baseband (IF) frequencies, but also at RF frequencies, particularly, around the carrier and significant harmonics. This functionality is key in studying the effects of out-of-band impedance termination on both short and long-term electrical memory effects. Achieving such comprehensive impedance control across wide modulation bandwidths is also critical in allowing the "emulation" of emerging power amplifier modes and architectures, and the subsequent waveform characterization of devices operating in these complex and often dynamic impedance environments. Initially, the baseband load-pull capabilities of the enhanced measurement system are experimentally demonstrated through the measurement of adjacent channel power (ACP) behavior of a class AB biased 10 W GaN HEMT, in response to a varying baseband load. Complete baseband and RF impedance control is then demonstrated through the emulation and analysis of a modulated Class-J impedance environment, which interestingly highlights the presence of separate optimum baseband impedance conditions necessary for the suppression of individual IM products.
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37

Nakai, Tomoo. "Magneto-Impedance Sensor Driven by 400 MHz Logarithmic Amplifier." Micromachines 10, no. 6 (May 29, 2019): 355. http://dx.doi.org/10.3390/mi10060355.

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A thin-film magnetic field sensor is useful for detecting foreign matters and nanoparticles included in industrial and medical products. It can detect a small piece of tool steel chipping or breakage inside the products nondestructively. An inspection of all items in the manufacturing process is desirable for the smart manufacturing system. This report provides an impressive candidate for realizing this target. A thin-film magneto-impedance sensor has an extremely high sensitivity, especially, it is driven by alternatiing current (AC) around 500 MHz. For driving the sensor in such high frequency, a special circuit is needed for detecting an impedance variation of the sensor. In this paper, a logarithmic amplifier for detecting a signal level of 400 MHz output of the sensor is proposed. The logarithmic amplifier is almost 5 mm × 5 mm size small IC-chip which is widely used in wireless devices such as cell phones for detecting high-frequency signal level. The merit of the amplifier is that it can translate hundreds of MHz signal to a direct current (DC) voltage signal which is proportional to the radio frequency (RF)signal by only one IC-chip, so that the combination of a chip Voltage Controlled Oscillator (VCO), a magneto-impedance (MI) sensor and the logarithmic amplifier can compose a simple sensor driving circuit.
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38

Wolf, Robert, Niko Joram, Stefan Schumann, and Frank Ellinger. "Dual-band impedance transformation networks for integrated power amplifiers." International Journal of Microwave and Wireless Technologies 8, no. 1 (November 10, 2014): 1–7. http://dx.doi.org/10.1017/s1759078714001391.

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This paper shows that the two most common impedance transformation networks for power amplifiers (PAs) can be designed to achieve optimum transformation at two frequencies. Hence, a larger bandwidth for the required impedance transformation ratio is achieved. A design procedure is proposed, which takes imperfections like losses into account. Furthermore, an analysis method is presented to estimate the maximum uncompressed output power of a PA with respect to frequency. Based on these results, a fully integrated PA with a dual-band impedance transformation network is designed and its functionality is proven by large signal measurement results. The amplifier covers the frequency band from 450 MHz to 1.2 GHz (3 dB bandwidth of the output power and efficiency), corresponding to a relative bandwidth of more than 100%. It delivers 23.7 dBm output power in the 1 dB compression point, having a power-added efficiency of 33%.
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39

KESKIN, ALI ÜMIT. "SINGLE CFA-BASED NICs WITH IMPEDANCE SCALING PROPERTIES." Journal of Circuits, Systems and Computers 14, no. 02 (April 2005): 195–203. http://dx.doi.org/10.1142/s0218126605002283.

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Negative impedance converter circuits (NICs) are important building blocks in design and manufacturing of analog and mixed mode integrated circuits. In this paper, a catalogue of single-current feedback amplifier-based negative impedance converter circuits having impedance scaling properties is proposed. Various examples are presented to illustrate the versatility of the proposed NIC circuits.
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40

Lu, Yapeng, Wenqu Xu, Quan Zuo, Jiazheng Pan, Xingyu Wei, Junliang Jiang, Zishuo Li, et al. "Broadband Josephson parametric amplifier using lumped-element transmission line impedance matching architecture." Applied Physics Letters 120, no. 8 (February 21, 2022): 082601. http://dx.doi.org/10.1063/5.0080314.

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We present a fishbone-like lumped-element artificial transmission line to overcome impedance mismatch in a reflection-type Josephson parametric amplifier between a nonlinear resonator and an external transmission line. Using this easily prepared architecture, we design and fabricate a broadband Josephson parametric amplifier, which has gain in an excess of 20 dB with a bandwidth of hundreds of MHz. Furthermore, by varying the working point of the device, the operating frequency of amplification can be tuned in a wide frequency range of 1 GHz while the amplifier operates in the mode of either three-wave mixing or four-wave mixing. Such a parametric amplifier is suitable for engineering applications of superconducting circuit quantum electrodynamics.
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41

Liang, Zhiming, Bin Li, Zhaohui Wu, and Yunfeng Hu. "A high input impedance chopper amplifier using negative impedance convertor for implantable EEG recording." IEICE Electronics Express 17, no. 17 (September 10, 2020): 20200238. http://dx.doi.org/10.1587/elex.17.20200238.

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42

Wang, Yun Jing, Zheng Wei Qu, and Xiao Chuan Hu. "A Current Comparator Based Four-Terminal Impedance Bridge." Applied Mechanics and Materials 241-244 (December 2012): 752–57. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.752.

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This paper presents a current comparator based four-terminal impedance bridge for quantity-value dissemination of national AC resistance standard in China. In order to enhance the feedback adjustment ability and simplify the balance process, the bridge applies a frequency selective amplifier instead of feedforward and feedback networks to balance the magnetomotive force of the current comparator. The resistance difference between the measured and standard resistor can be calculated according to their voltage difference indicated by a digital lock-in amplifier. The AC/DC resistance relative differences between Double Helix Resistor and Tinsley standard resistor are measured with the proposed bridge under 1592Hz.
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43

Zhou, Hanyun, S. H. Huang, and Wei Li. "Electrical Impedance Matching Between Piezoelectric Transducer and Power Amplifier." IEEE Sensors Journal 20, no. 23 (December 1, 2020): 14273–81. http://dx.doi.org/10.1109/jsen.2020.3008762.

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44

Gustavsson, S., D. Gunnarsson, and P. Delsing. "Cryogenic amplifier for intermediate source impedance with gigahertz bandwidth." Applied Physics Letters 88, no. 15 (April 10, 2006): 153505. http://dx.doi.org/10.1063/1.2194820.

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45

Huai, Gao, Lin Jiming, Haodong Wu, and Shui Yongan. "A high-efficiency distributed amplifier by using varying impedance." Microwave and Optical Technology Letters 26, no. 5 (2000): 339–41. http://dx.doi.org/10.1002/1098-2760(20000905)26:5<339::aid-mop19>3.0.co;2-8.

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46

Normand, G. "Floating-impedance realisation using a dual operational-mirrored amplifier." Electronics Letters 22, no. 10 (May 8, 1986): 521–22. http://dx.doi.org/10.1049/el:19860355.

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47

Lan, Jia-Long, and Wai-Kai Chen. "On loop-impedance matrix formulation of feedback amplifier theory." Journal of the Franklin Institute 320, no. 1 (July 1985): 1–14. http://dx.doi.org/10.1016/0016-0032(85)90047-x.

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48

Taryana, Y., T. Praludi, Y. Sulaeman, Y. Wahyu, W. I. Prayogo, and B. S. Nugroho. "High Power Amplifier (HPA) pada Frekuensi 437,430 MHz untuk Aplikasi TTC Downlink Nano Satelit TEL-U SAT." Jurnal Elektronika dan Telekomunikasi 16, no. 2 (December 20, 2016): 40. http://dx.doi.org/10.14203/jet.v16.40-45.

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Sistem Telemetry, Tracking, and Command (TTC) berfungsi sebagai interface komunikasi antara nano satelit dengan stasiun bumi. Salah satu perangkat yang penting dalam TTC adalah transmitter yang bekerja pada frekuensi downlink 437,430 MHz. Dari perhitungan link budget diperlukan sebuah high power amplifier (HPA) yang memiliki daya output 30 dBm agar data yang dikirimkan dapat diterima dengan baik oleh stasiun bumi. Pada tulisan ini dirancang dan direalisasikan HPA dua tingkat dengan frekuensi kerja 435 - 438 MHz. Penguat daya tingkat pertama menggunakan komponen aktif transistor BFR96S dan penguat daya tingkat kedua menggunakan komponen aktif transistor MRF555. Penyepadanan impedansi input menggunakan metode impedance matching Pi-network, sedangkan untuk penyepadanan impedansi interstage dan output menggunakan metode impedance matching T-network. Simulasi penguat daya menggunakan software Advance Design System (ADS 2011). Hasil perancangan HPA pada frekuensi 437,430 MHz menghasilkan gain sebesar 28,400 dB, VSWRin sebesar 1,291, dan VSWRout sebesar 1,295. Dari hasil pengukuran prototipe HPA, pada frekuensi 437,430 MHz menghasilkan gain sebesar 23,01 dB, VSWRin sebesar 2,126, VSWRout sebesar 1,695 pada bandwidth 50 MHz.
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49

Nand, Deva, and Neeta Pandey. "A New Proposal for OFCC-based Instrumentation Amplifier." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 1 (February 1, 2017): 134. http://dx.doi.org/10.11591/ijece.v7i1.pp134-143.

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This contribution puts forward a new voltage mode instrumentation amplifier (VMIA) based on operational floating current conveyor (OFCC). It presents high impedance at input terminals and provides output at low impedance making the proposal ideal for voltage mode operation. The proposed VMIA architecture has two stages - the first stage comprises of two OFCCs to sense input voltages and coverts the voltage difference to current while the second stage has single OFCC that converts the current to voltage. In addition it employs two resistors to provide gain and imposes no condition on the values of resistors. The behavior of the proposed structure is also analyzed for OFCC non idealities namely finite transimpedance and tracking error. The proposal is verified through SPICE simulations using CMOS based schematic of OFCC. Experimental results, by bread boarding it using commercially available IC AD844, are also included.
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50

KARYANA, ASEP, YUYUN SITI ROHMAH, and BUDI PRASETYA. "Realisasi LNA Dua Tingkat dengan Teknik Penyesuai Impedansi Trafo λ/4 dan Lumped Element untuk DVB-T2." ELKOMIKA: Jurnal Teknik Energi Elektrik, Teknik Telekomunikasi, & Teknik Elektronika 8, no. 1 (January 31, 2020): 1. http://dx.doi.org/10.26760/elkomika.v8i1.1.

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ABSTRAK Digital Video Broadcasting-Second Generation Terrestrial (DVB-T2) merupakan standar internasional yang menaungi pemberlakuan televisi digital saat ini. Pada konfigurasi DVB-T2 terdapat perangkat penerima sinyal di sisi pelanggan. Permasalahan yang sering dijumpai adalah lemahnya daya sinyal yang diterima. Oleh sebab itu, dibutuhkan penguat daya pada sistem penerima, yaitu Low Noise Amplifier (LNA) yang diletakkan setelah antena penerima. Pada penelitian ini, direalisasikan LNA menggunakan transistor BJT BFR96 dengan target desain dualstage, matching impedance Trafo λ/4 pada sisi input dan output, serta lumped element untuk penyepadanan impedansi antar tingkat. LNA direalisasikan untuk bekerja optimal pada frekuensi 630 MHz. Nilai Gain dan Noise Figure (NF) yang diperoleh berturut-turut, yaitu 12.96 dB dan 4.05 dB. Selain itu, nilai Voltage Standing Wave Ratio (VSWR) input dan output yang diperoleh berturut-turut sebesar 3.5674 dan 1.7718. Kata kunci: DVB-T2, LNA, Televisi, Gain, Noise Figure ABSTRACT Digital Video Broadcasting-Second Generation Terrestrial (DVB-T2) is the international standard that over shadows the current implementation of digital television. In the DVB-T2 configuration, there is a signal receiving device on the receiver side. The problem that is often encountered is the weak signal power received. Therefore, a power amplifier is needed in the receiving system, namely Low Noise Amplifier (LNA) which is placed after the receiving antenna. In this research, LNA was realized using a BJT BFR96 transistor with a dual-stage configuration design target, λ/4 impedance matching transformer on the input and output sides, and a lumped element for interstage matching impedances. LNA is realized to work optimally at frequency of 630 MHz. The Gain and Noise Figure (NF) values obtained were 12.96 dB and 4.05 dB, respectively. In addition, the input and output Voltage Standing Wave Ratio (VSWR) values obtained were 3.5674 and 1.7718, respectively. Keywords: DVB-T2, LNA, Television, Gain, Noise Figure
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