Journal articles: 'III-V technology'

1

Lile, D. L. "Advanced III–V semiconductor materials technology assessment." Thin Solid Films 141, no. 2 (August 1986): L93—L94. http://dx.doi.org/10.1016/0040-6090(86)90363-9.

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PEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY." International Journal of Modern Physics B 07, no. 28 (December 30, 1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.

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A review is given of the applications of ion implantation in III–V compound semiconductor device technology, beginning with the fundamentals of ion stopping in these materials and describing the use of implantation for both doping and isolation. There is increasing interest in the use of MeV implantation to create unique doping profiles or for the isolation of thick device structures such as heterojunction bipolar transistors or multi quantum well lasers, and we give details of these areas and the metal masking layers necessary for selective area processing. Finally, examples are given of the use of implantation in a variety of III–V devices.

3

Zhang, John H., Stan Tsai, Charan Surisetty, Jody Fronheiser, Shariq Siddiqui, Steven Bentley, Raghuveer Patlolla, Donald F. Canaperi, Walter Kleemeier, and Cathy Labelle. "CMP Challenges for Advanced Technology Nodes beyond Si." MRS Advances 2, no. 51 (2017): 2891–902. http://dx.doi.org/10.1557/adv.2017.339.

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ABSTRACTAs the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/III-V dishing. Secondly we discuss the challenge for the reduction of the defects during CMP for these new materials. Finally the challenge that is relevant especially for the introduction of III-V materials is studied. During the polishing of III-V materials, toxic gases as well as III-V containing liquid waste will be created. The chemical mechanism of the waste control is discussed.

4

Huber, A. M., and C. Grattepain. "Crystal Defect Study in III-V Compound Technology." Materials Science Forum 38-41 (January 1991): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1345.

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Beneking, Heinz. "III–V Technology: The Key for Advanced Devices." Journal of The Electrochemical Society 136, no. 9 (September 1, 1989): 2680–86. http://dx.doi.org/10.1149/1.2097549.

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Hasegawa, Hideki, and Masamichi Akazawa. "Surface passivation technology for III–V semiconductor nanoelectronics." Applied Surface Science 255, no. 3 (November 2008): 628–32. http://dx.doi.org/10.1016/j.apsusc.2008.07.002.

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7

Liliental-Weber, Z., M. Li, G. S. Li, C. Chang-Hasnain, and E. R. Weber. "Structure of III-V oxides." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 942–43. http://dx.doi.org/10.1017/s0424820100167172.

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The lack of high-quality native oxides on the III-V compounds has hindered the development of III-V integrated circuits and optoelectronic technology. Recently it was shown that stable oxides can be formed in the III-V compounds rich in Al, such as AlxGa1-x As similarly as it was done in Si technology by the reaction of AlxGa1-x As with H2O vapor (in N2 carrier gas) at elevated temperatures (∼400−450°C). The high quality of these oxides was attributed to the formation of stable AlO(OH) and Al2O3 compounds. However, this conclusion was not definitive, since several Al rich compounds were proposed as well. In addition, it was never clarified whether the excess As created in this process has any role in the stabilization of these oxides, in reducing leakage current or in impurity diffusion. Moreover there is concern as to the quality of the oxide/GaAs interfaces created by lateral oxidation of an intermediate AlGaAs layer.

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Thakur, R. P. S., R. Singh, A. J. Nelson, and A. B. Swartzlander. "Role ofinsiturapid isothermal processing in advanced III‐V technology." Journal of Applied Physics 70, no. 7 (October 1991): 3857–61. http://dx.doi.org/10.1063/1.349191.

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9

Pearton, S. J., F. Ren, S. N. G. Chu, W. S. Hobson, C. R. Abernathy, T. R. Fullowan, J. R. Lothian, R. G. Elliman, D. C. Jacobson, and J. M. Poate. "Applications of ion implantation in III–V device technology." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 79, no. 1-4 (June 1993): 648–50. http://dx.doi.org/10.1016/0168-583x(93)95434-7.

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Dutta, P. S. "III–V Ternary bulk substrate growth technology: a review." Journal of Crystal Growth 275, no. 1-2 (February 2005): 106–12. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.073.

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Miyauchi, Eizo, and Hisao Hashimoto. "Maskless ion implantation technology for III–V compound semiconductors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 (March 1985): 851–57. http://dx.doi.org/10.1016/0168-583x(85)90482-3.

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Hirano, Koki. "AWPP 2011 Report Injection Molding & Mold Technology III～V." Seikei-Kakou 24, no. 3 (February 20, 2012): 148. http://dx.doi.org/10.4325/seikeikakou.24.148.

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Shahrjerdi, D., S. W. Bedell, B. Hekmatshoar, C. Bayram, and D. Sadana. "(Invited) New Paradigms for Cost-Effective III-V Photovoltaic Technology." ECS Transactions 50, no. 40 (April 1, 2013): 15–22. http://dx.doi.org/10.1149/05040.0015ecst.

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Vitanov, P., M. Milanova, E. Goranova, Ch Dikov, Pl Ivanov, and V. Bakardjieva. "Solar cell technology on the base of III–V heterostructures." Journal of Physics: Conference Series 253 (November 1, 2010): 012044. http://dx.doi.org/10.1088/1742-6596/253/1/012044.

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15

Hashimoto, H., and E. Miyauchi. "Finely focused ion beam technology in III-V compound semiconductors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (January 1987): 381–87. http://dx.doi.org/10.1016/s0168-583x(87)80075-7.

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Alles, David S., and Kevin J. Brady. "Packaging Technology for III-V Photonic Devices and Integrated Circuits." AT&T Technical Journal 68, no. 1 (January 2, 1989): 83–92. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00648.x.

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Thadathil, George. "Editorial: Technology and Evolving Social Spaces." SALESIAN JOURNAL OF HUMANITIES & SOCIAL SCIENCES 4, no. 1 (May 1, 2013): v—iii. http://dx.doi.org/10.51818/sjhss.04.2013.v-iii.

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Pacella, Nan Y., Kunal Mukherjee, Mayank T. Bulsara, and Eugene A. Fitzgerald. "Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials." ECS Journal of Solid State Science and Technology 2, no. 7 (2013): P324—P331. http://dx.doi.org/10.1149/2.015307jss.

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19

NISHIYAMA, Nobuhiko. "Low-Temperature Direct Bonding Technology for III-V/Si Heterogeneous Integration." Review of Laser Engineering 48, no. 10 (2020): 520. http://dx.doi.org/10.2184/lsj.48.10_520.

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Cross, T. A., and C. R. Huggins. "Advanced single crystal III-V solar cell technology and its applications." Renewable Energy 6, no. 3 (April 1995): 283–90. http://dx.doi.org/10.1016/0960-1481(95)00021-b.

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Long, A. P., and I. G. Eddison. "Advanced III–V HEMT technology for microwave and millimetre-wave applications." Microelectronic Engineering 19, no. 1-4 (September 1992): 389–95. http://dx.doi.org/10.1016/0167-9317(92)90460-9.

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22

Quay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John, and Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology." ECS Meeting Abstracts MA2023-01, no. 33 (August 28, 2023): 1853. http://dx.doi.org/10.1149/ma2023-01331853mtgabs.

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This work deals with the wafer-level integration of advanced group III-V devices and integrated circuits on silicon substrate for RF-sensor integration, such as radar functions a very high frequencies beyond 300 GHz [1]. The aim is to achieve both performance improvements on device level, co-integration with digital functions, and advanced integration to achieve a greener usage of material critical to the environment. Submillimeter-Wave frequency bands beyond 300 GHz allow for broadband transmit and receive windows, serviceable to both communications and radar-based applications—increasing data rates and imaging resolutions, respectively. On the other hand, CMOS co-integration is called for by the data acquisition- and other mixed-mode- and fast digital functions. As examples of the integration schemes Terahertz Monolithic Integrated Circuit amplifiers (TMICs) are implemented in an advanced transferred-substrate InGaAs-channel HEMT technology with 20-nm gate length on silicon. The inverted III-V HEMT heterostructure is grown by molecular beam epitaxy (MBE) on 100-mm semi-isolating GaAs wafers and transferred to silicon substrates by using a SiO2-based wafer bond process with subsequent wafer thinning and removal of the GaAs substrate. Thus, only a 100-nm-thick III-V heterostructure layer is remaining on the Si substrate. This advanced transferred-substrate technology also offers the implementation of HEMT devices with backside gate [2,3] to achieve better sub-threshold slope, or field plates to increase both channel confinement and higher breakdown voltages. The 20-nm InGaAs-OI HEMT technology features typical values for the OFF-state breakdown voltage of 5 V and and maximum drain-current density of 1200 mA/mm, respectively. A maximum transconductance of 2400 mS/mm is achieved. The expected cutoff frequency values fT and fmax are above 500 GHz and 1 THz, respectively [4]. A fully passivated back-end-of-line (BEOL) process is used, including three metal layers (MET1–MET3). A NiCr 50 Ohm sq thin-film-resistor layer, as well as an SiN layer for the implementation of MIM capacitors between MET2 andMET3. S-parameter characteristics of a six-stage and nine-stage TMIC amplifiers in the frequency band from 620 to 730 GHz are given as examples. During the on-wafer characterization, the HEMT devices in cascode configuration have been biased at VD= 2 V (1 V drain–source voltage per device) and a current of 350 mA/mm. The measured small-signal gain of the six-stage cascode TMIC amplifier is in the range of 22–25 dB over the frequency range from 670 to above 700 GHz. This corresponds to 4 dB of gain per cascode stage around the 670-GHz frequency range. A nine-stage TMIC amplifier, on the other hand, achieves at least 30 dB of measured gain from 660 to about 700 GHz. This again corresponds to a gain per stage below 4 dB. Such results prove both the advancements in integration as well as state-of-the-art circuit performance co-integrated on silicon. References: [1] B. Gashi et al., "Broadband 400 GHz On-Chip Antenna With a Metastructured Ground Plane and Dielectric Resonator," in IEEE Transactions on Antennas and Propagation, vol. 70, no. 10, pp. 9025-9038, Oct. 2022, doi: 10.1109/TAP.2022.3177527. [2] A. Tessmann et al., "20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon," in IEEE Journal of Solid-State Circuits, vol. 54, no. 9, pp. 2411-2418, Sept. 2019, doi: 10.1109/JSSC.2019.2915161. [3] A. Leuther et al., "InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate," 2020 50th European Microwave Conference (EuMC), 2021, pp. 187-190, doi: 10.23919/EuMC48046.2021.9337957. [4] L. John, et al., "High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology," in IEEE Microwave and Wireless Components Letters, vol. 32, no. 6, pp. 728-731, June 2022, doi: 10.1109/LMWC.2022.3160093.

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Quay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John, and Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology." ECS Transactions 111, no. 1 (May 19, 2023): 117–22. http://dx.doi.org/10.1149/11101.0117ecst.

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This work covers integration of advanced III-V semiconductors on silicon substrate for RF-sensor integration up to very high frequencies of 300 GHz and 670 GHz, respectively, including improved active device performance through intelligent engineering of the co-integrated buffer layers. Several Terahertz Monolithically-Integrated Circuits are presented, which demonstrate good gain performance, low-noise, and improve large-signal behavior through the application of the back-gate.

24

PEARTON, S. J. "REACTIVE ION ETCHING OF III–V SEMICONDUCTORS." International Journal of Modern Physics B 08, no. 14 (June 30, 1994): 1781–876. http://dx.doi.org/10.1142/s0217979294000762.

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Anisotropic dry etching by a number of different techniques is widely employed in III–V compound semiconductor technology for pattern transfer, device isolation, mesa formation, grating fabrication and via hole etching. In this paper we review the different dry etching techniques, the plasma chemistries employed for III–V materials and electrical and optical changes to the near-surface of the etched sample. We give examples of the use of dry etching in fabrication of heterojunction bipolar transistors, field effect transistors and various types of semiconductor lasers. Particular attention is paid to the characteristics of Electron Cyclotron Resonance discharges operating at high ion densities (≥5×1011 cm −3) and low pressure (~1 mTorr) with low ion energies (≤15 eV ) which are ideally suited for dry etching of III–V semiconductors.

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McMORROW, DALE, JOSEPH S. MELINGER, and ALVIN R. KNUDSON. "SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS." International Journal of High Speed Electronics and Systems 14, no. 02 (June 2004): 311–25. http://dx.doi.org/10.1142/s0129156404002375.

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Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are discussed.

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Ji, Chunnuan, Rongjun Qu, Qinghua Tang, Xiguang Liu, Hou Chen, Changmei Sun, and Peng Yin. "Removal of trace As(V) from aqueous solution by Fe(III)-loaded porous amidoximated polyacrylonitrile." Water Supply 16, no. 6 (May 18, 2016): 1603–13. http://dx.doi.org/10.2166/ws.2016.085.

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A Fe(III)-loaded chelating resin named Fe(III) AO PAN was prepared by immobilizing Fe(III) onto porous amidoximated polyacrylonitrile (AO PAN) obtained by modification of hydroxylamine with polyacrylonitrile (PAN), which was synthesized by suspended emulsion polymerization. The structures of PAN, AO PAN, and Fe(III)-AO PAN were characterized by infrared spectrometry and scanning electron microscopy. The performance of Fe(III)-AO PAN as the ligand exchange adsorbent to remove As(V) from aqueous solution was investigated using static equilibrium and dynamic adsorption experiments. The adsorption experiments showed that Fe(III)-AO PAN had higher adsorption selectivity for As(V) than other ubiquitous anions in nature water body such as Cl−, SO42−, HCO3−, PO43−, and SiO32−. The optimal pH for adsorption of As(V) on Fe(III) AO PAN was 2.0, with the maximum adsorption capacity of 0.55 mg/g. The As(V) adsorbed on Fe(III) AO PAN could be easily eluted with 10 BV of 5% NaCl solution (at pH = 9.0).

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Xi, Jianhong, and Mengchang He. "Removal of Sb(III) and Sb(V) from aqueous media by goethite." Water Quality Research Journal 48, no. 3 (August 1, 2013): 223–31. http://dx.doi.org/10.2166/wqrjc.2013.030.

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This study investigated the removal of Sb(III) and Sb(V) from aqueous media through their adsorption onto oxide minerals (goethite) under a set of conditions (initial Sb concentration, pH, reaction time, and interaction temperature). The kinetic studies suggested that the adsorption equilibriums for both Sb(III) and Sb(V) were achieved within 24 h. The adsorption data collected at three different temperatures were successfully modeled using both the Langmuir and Freundlich isotherms. The adsorption of Sb(III) onto goethite was greater than that of Sb(V) at the three investigated temperatures. The thermodynamic parameters (ΔG°, ΔH°, and ΔS°) were calculated from the dependence of the adsorption process on the reaction temperature, and the calculated parameters suggest that the adsorption of both Sb(III) and Sb(V) onto goethite is spontaneously endothermic. The adsorption of Sb(III) and Sb(V) on goethite was dependent on pH within the investigated pH range.

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Nayak, Bishwajit, Md Amir Hossain, Mrinal Kumar Sengupta, Saad Ahamed, Bhaskar Das, Arup Pal, and Amitava Mukherjee. "Adsorption Studies with Arsenic onto Ferric Hydroxide Gel in a Non-oxidizing Environment: the Effect of Co-occurring Solutes and Speciation." Water Quality Research Journal 41, no. 3 (August 1, 2006): 333–40. http://dx.doi.org/10.2166/wqrj.2006.037.

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Abstract Groundwater arsenic contamination has emerged as a major health threat to millions of people around the world. Studying the sorption process of As(III) and As(V) onto ferric hydroxide gel is important to understand the mobilization of arsenic under nonoxidizing conditions. Most of the previous adsorption studies were limited to single element or multi-element equilibrium in synthetic water. To investigate the effect of matrix and speciation in real groundwater systems, adsorption tests with added As(III) and As(V) separately and in mixture were conducted in both double-distilled deionized water (DDDW) and As-safe (<3 µg L-1) tubewell water. In DDDW, the As(III)/As(V) ratio in the mixture strongly influenced the sorption behaviour by shifting the adsorption edge and also the efficiency. For As(III) and As(V) mixture in 1:1 proportions in tubewell water, the adsorption of both the species decreased up to pH 8; in the alkaline ranges the adsorption extent was marginally increased in comparison to that in DDDW. When As(III):As(V) was added in 3:1 proportions in tubewell water, the adsorption of both was enhanced in alkaline ranges compared to that in DDDW. When As(V) was predominant [As(V):As(III) = 3:1] in tubewell water, no significant changes were observed for As(V), though adsorption of As(III) was notably retarded. The statistical analysis of the results indicates the concentration ratio of As species in the system has a definite impact on adsorption behaviour onto ferric hydroxide gel.

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WEAVER, B. D., DALE McMORROW, and L. M. COHN. "RADIATION EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS." International Journal of High Speed Electronics and Systems 13, no. 01 (March 2003): 293–326. http://dx.doi.org/10.1142/s0129156403001624.

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Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are also discussed here. Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles; this sensitivity becomes more significant as clock rates and operating speeds increase.

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Barnett, Joel, Richard Hill, and Prashant Majhi. "Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique." Solid State Phenomena 187 (April 2012): 33–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.33.

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The continued scaling of CMOS devices to the sub-16 nm technology node will likely be achieved with new architectures, such as FinFETs and high mobility substrates, including compound semiconductors (III-V). At these technology nodes, abrupt channel doping profiles with high dopant activation will be needed under low thermal budget environments for III-V materials. Ion implantation into III-V materials presents a problem as it induces crystal damage, which can alter the stoichiometry in a manner that is difficult to recover. The residual damage can lead to higher junction leakage and lower dopant activation. This paper presents a potentially defect-free alternative, mono-layer doping (MLD), which utilizes wet processing techniques.

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Singh, Jay, C. L. Maurya, Rishabh Gupta, Sunil Kumar, Shivam Chaturvedi, Ajay Pratap Singh, and Dhruvendra Singh Sachan. "Genetic Divergence Analysis of Wheat (Triticum aestivum L.) Genotypes." Journal of Experimental Agriculture International 46, no. 5 (March 21, 2024): 287–92. http://dx.doi.org/10.9734/jeai/2024/v46i52377.

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A laboratory experiment was carried out with 30 indigenous genotypes of bread wheat along with three checks in a complete randomized design for divergence analysis. The trial was conducted at Seed Technology laboratory of Acharya Narendra Deva University of Agriculture and Technology Kumarganj, Ayodhya during 2020-21. The observations were recorded on thirteen-character Test weight (1000-grain weight), seed width (mm), seed length (mm), shoot length, root length, seedling length, seedling dry weight, germination (%), first count, final count, vigour index-I, vigour index-II. The 30 genotypes grouped into 5 clusters resulted in cluster I and V emerging with highest number of entries as both were constituted by 9 entries followed by Cluster III having 6 genotypes and cluster II and VI having 4 genotypes respectively. The maximum intra cluster distance was estimated in the case of Cluster II (2.630) followed by cluster I (2.618), Cluster III (2.545), cluster IV (2.512), and cluster V (2.148). The highest inter-cluster distance was observed between clusters III and IV (6.062) Followed by clusters III and V (4.632), II and IV (4.489), cluster II and V ( 4.304). The minimum inter cluster was observed between II and III (3.317) followed by cluster IV and V ( 3.337) and cluster I and V (3.404). The cluster mean of 13 different characters for most of the character's highest cluster mean was observed in clusters IV and V and lowest cluster mean observed in cluster III and II.

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Yan, Zhao, and Qiang Li. "Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon." Journal of Physics D: Applied Physics 57, no. 21 (February 29, 2024): 213001. http://dx.doi.org/10.1088/1361-6463/ad26cd.

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Abstract Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

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Ji, Chunnuan, Suwen Sun, Shenghua Chi, Rongjun Qu, Changmei Sun, and Peng Yin. "Arsenic adsorption using Fe(III)-loaded porous amidoximated acrylonitrile/itaconic copolymers." Water Supply 17, no. 3 (October 11, 2016): 698–706. http://dx.doi.org/10.2166/ws.2016.148.

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A highly selective polymeric ligand exchanger was developed for the removal of trace As(V) from aqueous solution. This adsorbent was prepared by loading Fe(III) onto porous amidoximated polyacrynitrile (AN)/itaconic acid (IA) copolymers (Fe(III)-AO AN/IA). Negligible ferric ion dissolution was observed from Fe(III)-AO AN/IA in solution of acidic pHs up to 2. As(V) adsorption by Fe(III)-AO AN/IA is a pH-dependent process with maximum capacity of 1.32 mg/g at pH 2–3. The adsorption process was found to be governed by pseudo-second-order kinetics, and could be described by the Freundlich model. Fe(III)-AO AN/IA had higher adsorption selectivity for As(V) than other anions in a simulated groundwater body such as Cl−, SO42−, PO43−, SiO32−. Fixed-bed adsorption indicated that As(V) in simulated groundwater could be effectively captured from 400 μg/L to <10 μg/L within 190 bed volumes (BV). The As(V) adsorbed on Fe(III)-AO AN/IA could be efficiently eluted with 10 BV of 5% NaCl solution (at pH = 9.0).

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Gao, Luyao, Mengna Hao, Fanling Bu, Chunnuan Ji, Rongjun Qu, Changmei Sun, and Ying Zhang. "As(III) removal by Fe(III)-amidoximated PAN in the presence of H2O2 through simultaneous oxidation and adsorption." Water Supply 20, no. 2 (December 30, 2019): 565–73. http://dx.doi.org/10.2166/ws.2019.201.

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Abstract This study explored the efficient removal of As(III) by Fe(III)-amidoximated PAN (Fe(III) AO PAN) in the presence of H2O2 through simultaneous oxidation and adsorption. It presented that As(III) could be oxidized to As(V) efficiently in the pH range 3–9 within a short time. At the same time, the oxidized As(V) was adsorbed by Fe(III)-AO PAN. The effect of pH value, H2O2 concentration, Fe(III)-AO PAN amount, and coexisting anions on the As(III) oxidation and removal were investigated in detail. Dynamic adsorption on fixed column was also studied. Arsenic removal efficiency including As(III) and As(V) could be achieved (95.2%) by the simultaneous oxidation and adsorption process at the following optimal conditions: pH = 6.5, dosage of Fe(III)-AO PAN = 2.5 g/L, H2O2 = 100 mg/L, initial concentration of As(III) = 5 mg/L. Dynamic adsorption on fixed column demonstrated that As(III) in simulated groundwater could be efficiently removed from 500μg/L to <10 μg/L within 130 bed volumes (BV).

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Liu, G. J., X. R. Zhang, J. Jain, J. W. Talley, and C. R. Neal. "Stability of inorganic arsenic species in simulated raw waters with the presence of NOM." Water Supply 6, no. 6 (December 1, 2006): 175–82. http://dx.doi.org/10.2166/ws.2006.954.

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Effect of natural organic matter (NOM) on the stability of inorganic arsenic species in simulated raw water was examined at circumneutral pH. An ion chromatography–inductively coupled plasma mass spectrometry system was used for simultaneous determination of As(III) and As(V). A reduction of arsenate (As(V)) to arsenite (As(III)) was observed in the unfiltered simulated raw waters (USW). The As(V) reduction to As(III) did not occur in the simulated waters that passed through a 0.2 μm membrane (FSW). Microorganism activities is probably the major reason causing As(V) reduction in the USW. In the FSW without NOM, As(III) tended to be oxidized into As(V). The addition of 0.036 mM of Fe(II) significantly facilitated the oxidation. The presence of 10 mg/L Suwannee River NOM as C inhibited As(III) oxidation no matter whether Fe(II) existed or not. The experimental results suggest that NOM can mediate distribution of inorganic arsenic species in water, thus it is an important factor controlling the mobility and toxicity of arsenic in drinking water.

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Ghosh, Uday Chand, Durjoy Bandyopadhyay, Biswaranjan Manna, and Manik Mandal. "Hydrous Iron(III)-Tin(IV) Binary Mixed Oxide: Arsenic Adsorption Behaviour from Aqueous Solution." Water Quality Research Journal 41, no. 2 (May 1, 2006): 198–209. http://dx.doi.org/10.2166/wqrj.2006.023.

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Abstract Groundwater in the Bengal delta plain is primarily in an anoxic environment and As(III)/As(total) ratios reported are in the range of 0.60 to 0.90. Most of the studied adsorbents showed greater adsorption affinity for less toxic As(V) than for more toxic As(III). The synthesis and physicochemical characterizations of iron(III)-tin(IV) binary mixed oxide composite with systematic arsenic adsorption behaviour are reported here. The parameters studied are the effect of pH, adsorption capacity with varying arsenic loads, contact time for kinetics and isotherm modelling by batch method. In the pH range of 3.0 to 9.0, the adsorption of As(III) is found to be nearly the same while that of As(V) decreases with increasing pH for the studied arsenic concentrations (5.0 to 20.0 mg L-1). The adsorption data were analyzed using various kinetic and isotherm model equations. The rate of adsorption of As(III) was faster than that of As(V) at equilibrium pH ~7.0 and temperature 30(± 2)°C. The adsorption kinetic data for arsenic fitted best with the Ho's pseudo-second order [R2 ~0.99–1.00 for As(III) and ~0.97–0.98 for As(V)] and parabolic diffusion (R2 ~0.98–0.99) equations. The present kinetic data fitted the power function and simple Elovich kinetic equations well (R2 = ~0.97–1.00), except the data obtained for As(III) from the 20.0 mg L-1 solution. The analyses of adsorption data for As(III) and As(V), respectively, at equilibrium pH 6.8(±0.1) and 7.3(±0.1) with three different two-parameter isotherm model equations show the fitting order: Langmuir < Freundlich >Temkin. The monolayer adsorption capacity (θ0, mg g-1) values evaluated from the Langmuir isotherm for As(III) and As(V) are 43.86 and 27.55, respectively.

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Hiraki, Tatsurou, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, and Shinji Matsuo. "III–V/Si integration technology for laser diodes and Mach–Zehnder modulators." Japanese Journal of Applied Physics 58, SB (March 27, 2019): SB0803. http://dx.doi.org/10.7567/1347-4065/ab0741.

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Lee, R. T. P., W. Y. Loh, R. Tieckelmann, T. Orzali, C. Huffman, A. Vert, G. Huang, et al. "(Invited) Technology Options to Reduce Contact Resistance in Nanoscale III-V MOSFETs." ECS Transactions 66, no. 4 (May 15, 2015): 125–34. http://dx.doi.org/10.1149/06604.0125ecst.

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Deshpande, V. V., V. Djara, D. Caimi, E. O'Connor, M. Sousa, L. Czornomaz, and J. Fompeyrine. "(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology." ECS Transactions 69, no. 10 (October 2, 2015): 131–42. http://dx.doi.org/10.1149/06910.0131ecst.

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Cheng, K. Y. "Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications." Proceedings of the IEEE 85, no. 11 (1997): 1694–714. http://dx.doi.org/10.1109/5.649646.

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Kwo, J. R., T. D. Lin, M. L. Huang, P. Chang, Y. J. Lee, and M. Hong. "Advances on III-V MOSFET for Science and Technology beyond Si CMOS." ECS Transactions 19, no. 2 (December 18, 2019): 593–603. http://dx.doi.org/10.1149/1.3122118.

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Harris, H. Michael. "III–V MESFET and HEMT research at the Georgia technology research institute." III-Vs Review 4, no. 2 (April 1991): 28–30. http://dx.doi.org/10.1016/0961-1290(91)90190-8.

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Kúdela, R., J. Šoltýs, M. Kučera, R. Stoklas, F. Gucmann, M. Blaho, M. Mičušík, et al. "Technology and application of in-situ AlOx layers on III-V semiconductors." Applied Surface Science 461 (December 2018): 33–38. http://dx.doi.org/10.1016/j.apsusc.2018.06.229.

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Lee, Subin, Seong Kwang Kim, Jae-Hoon Han, Jin Dong Song, Dong-Hwan Jun, and Sang-Hyeon Kim. "Epitaxial Lift-Off Technology for Large Size III–V-on-Insulator Substrate." IEEE Electron Device Letters 40, no. 11 (November 2019): 1732–35. http://dx.doi.org/10.1109/led.2019.2944155.

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L�th, H. "Research on III-V Semiconductor Interfaces: Its Impact on Technology and Devices." physica status solidi (a) 187, no. 1 (September 2001): 33–44. http://dx.doi.org/10.1002/1521-396x(200109)187:1<33::aid-pssa33>3.0.co;2-9.

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Sri sukmawati, Ni made, I. made Citra wibawa, and Putu Aditya antara. "Pengaruh Model Pembelajaran Science Environment Technology Society Terhadap Hasil Belajar Ilmu Pengetahuan Alam." Jurnal Ilmiah Sekolah Dasar 2, no. 3 (November 28, 2018): 329. http://dx.doi.org/10.23887/jisd.v2i3.16149.

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The research was purpose to find out the differences on learning result of natural science between group of students who have been taught using learning model science environment technology society and groups of students who have been taught using conventional learning model. This research was study quasi-experiment, with non-equivalent postttest only control group design.Population of this research is all of class V SD in Gugus III Mendoyo Sub-district amounts to 129 person. The sample of this research were class V SDN 8 Penyaringan amounts to 21 personand SDN 1 Penyaringan amounts to 23 person. The sample was determined using random sampling technique. Learning result data was collected using multiple choice test. The data obtained were analyzed using descriptive statistical analysis technique and inferential statistical analysis (t-test). The results show that there are differences of result learning Inatural science between group of students who have been taught using learning model science environment technology society and groups of students who have been taught using conventional learning model class V SD in gugus III Mendoyo subdistrict.This is show by tcount (9,707)> ttable (2,000). Furthermore, the experimental group average (20.98) is greater than the control group mean (14.67). Thus, the science environment technology society learning model has a positive effect on the learning result of IPA in grade V SD students in Gugus III Mendoyo Subdistrict

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Singh, Tony Sarvinder, and Kamal K. Pant. "Kinetics and Mass Transfer Studies on the Adsorption of Arsenic onto Activated Alumina and Iron Oxide Impregnated Activated Alumina." Water Quality Research Journal 41, no. 2 (May 1, 2006): 147–56. http://dx.doi.org/10.2166/wqrj.2006.017.

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Abstract The present investigation deals with the uptake of As(III) and As(V) ions from aqueous solution by activated alumina and a new laboratory-prepared sorbent—iron oxide impregnated activated alumina. Iron oxide impregnation onto activated alumina significantly increased the percent arsenic removal and adsorption capacity for As(III) and As(V) ions. The maximum As(III) and As(V) removals were 96.8% and 98.4%, respectively, by iron oxide impregnated activated alumina (IOIAA). Maximum As(III) and As(V) removal of 94.2% and 96.1% was observed over activated alumina. Kinetic studies were performed at different initial sorbate concentrations to determine the mechanism of mass transfer of sorbate onto this sorbent. The maximum removal of As(III) and As(V) by activated alumina and iron oxide impregnated alumina takes place within 6 h and attains equilibrium within 12 h. First-order Lagergren kinetics explained the adsorption of arsenic over activated alumina whereas a pseudo-second order rate equation explained the behaviour of As(III) adsorption over iron oxide impregnated activated alumina. Diffusional effects in solid pellets were also investigated to understand the mechanism of adsorption. These results indicate that the mechanism of arsenic adsorption is complex on both sorbents as both pore diffusion and surface diffusion contribute to the arsenic removal. During the initial period, surface diffusion was predominant but as the adsorption progresses, pore diffusion dominated the rate of adsorption.

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Chang, Y. Y., K. S. Kim, J. H. Jung, J. K. Yang, and S. M. Lee. "Application of iron-coated sand and manganese-coated sand on the treatment of both As(III) and As(V)." Water Science and Technology 55, no. 1-2 (January 1, 2007): 69–75. http://dx.doi.org/10.2166/wst.2007.029.

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In this study, manganese-coated sand (MCS) and iron-coated sand (ICS) were applied in the oxidation of As(III) and adsorption of As(V), respectively. ICS and MCS were prepared by mixing FeCl3 and Mn(NO3)2, respectively, with Joomoonjin sand at 150°C. In the batch adsorption isotherms, adsorption of As(III) and As(V) onto ICS followed a Langmuir type. ICS showed a greater capacity in the removal of As(V) than As(III) and also in the removal of As(V) compared with MCS. Three different configurations of ICS and MCS were used to investigate the oxidation of As(III) and adsorption of As(V) in a column. In the homogenised system, arsenic breakthrough was approximately two-times delayed compared with the separately packed systems. After breakthrough of arsenic, concentration of As(III) in the effluents was below 40 ppb for the entire reaction period in all configurations, and most arsenic was identified as As(V) owing to near complete conversion of As(III) to As(V) by MCS. The catalytic activity of MCS on the oxidation of As(III) was maintained up to 700 pore volumes, which corresponds to the treatment of at least 300 mg As(III) based on the 1 kg MCS. Compared with the homogenised column, the released Mn(II) concentration from two-staged and four-staged columns was great for the entire reaction period. In the case where the same amount of ICS and MCS was packed in a filtration system, the homogenised column was identified as a better configuration compared with the two-staged and four-staged columns when considering the arsenic breakthrough time as well as the released concentration of Fe(III) and Mn(II).

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Yamaguchi, Masafumi, Frank Dimroth, Nicholas J. Ekins-Daukes, Nobuaki Kojima, and Yoshio Ohshita. "Overview and loss analysis of III–V single-junction and multi-junction solar cells." EPJ Photovoltaics 13 (2022): 22. http://dx.doi.org/10.1051/epjpv/2022020.

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The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. Because state-of-the-art efficiencies of single-junction solar cells are approaching the Shockley-Queisser limit, the multi-junction (MJ) solar cells are very attractive for high-efficiency solar cells. This paper reviews progress in III–V compound single-junction and MJ solar cells. In addition, analytical results for efficiency potential and non-radiative recombination and resistance losses in III–V compound single-junction and MJ solar cells are presented for further understanding and decreasing major losses in III–V compound materials and MJ solar cells. GaAs single-junction, III–V 2-junction and III–V 3-junction solar cells are shown to have potential efficiencies of 30%, 37% and 47%, respectively. Although in initial stage of developments, GaAs single-junction and III–V MJ solar cells have shown low ERE values, ERE values have been improved as a result of several technology development such as device structure and material quality developments. In the case of III–V MJ solar cells, improvements in ERE of sub-cells are shown to be necessary for further improvements in efficiencies of MJ solar cells.

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Horng, Ray-Hua, Ming-Chun Tseng, and Shui-Yang Lien. "Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate." International Journal of Photoenergy 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/108696.

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This study involved analyzing the reliability of two types of III-V solar cells: (1) III-V solar cells grown on new and recycled gallium arsenide (GaAs) substrates and (2) the III-V solar cells transferred onto an electroplated nickel (Ni) substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO) process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.

Journal articles on the topic 'III-V technology'

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