Relevant bibliographies by topics / III-V technology

Academic literature on the topic 'III-V technology'

Author: Grafiati
Published: 15 June 2024

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Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Journal articles on the topic "III-V technology":

1

Lile, D. L. "Advanced III–V semiconductor materials technology assessment." Thin Solid Films 141, no. 2 (August 1986): L93—L94. http://dx.doi.org/10.1016/0040-6090(86)90363-9.

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2

PEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY." International Journal of Modern Physics B 07, no. 28 (December 30, 1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.

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A review is given of the applications of ion implantation in III–V compound semiconductor device technology, beginning with the fundamentals of ion stopping in these materials and describing the use of implantation for both doping and isolation. There is increasing interest in the use of MeV implantation to create unique doping profiles or for the isolation of thick device structures such as heterojunction bipolar transistors or multi quantum well lasers, and we give details of these areas and the metal masking layers necessary for selective area processing. Finally, examples are given of the use of implantation in a variety of III–V devices.
3

Zhang, John H., Stan Tsai, Charan Surisetty, Jody Fronheiser, Shariq Siddiqui, Steven Bentley, Raghuveer Patlolla, Donald F. Canaperi, Walter Kleemeier, and Cathy Labelle. "CMP Challenges for Advanced Technology Nodes beyond Si." MRS Advances 2, no. 51 (2017): 2891–902. http://dx.doi.org/10.1557/adv.2017.339.

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ABSTRACTAs the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/III-V dishing. Secondly we discuss the challenge for the reduction of the defects during CMP for these new materials. Finally the challenge that is relevant especially for the introduction of III-V materials is studied. During the polishing of III-V materials, toxic gases as well as III-V containing liquid waste will be created. The chemical mechanism of the waste control is discussed.
4

Huber, A. M., and C. Grattepain. "Crystal Defect Study in III-V Compound Technology." Materials Science Forum 38-41 (January 1991): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1345.

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5

Beneking, Heinz. "III–V Technology: The Key for Advanced Devices." Journal of The Electrochemical Society 136, no. 9 (September 1, 1989): 2680–86. http://dx.doi.org/10.1149/1.2097549.

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6

Hasegawa, Hideki, and Masamichi Akazawa. "Surface passivation technology for III–V semiconductor nanoelectronics." Applied Surface Science 255, no. 3 (November 2008): 628–32. http://dx.doi.org/10.1016/j.apsusc.2008.07.002.

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7

Liliental-Weber, Z., M. Li, G. S. Li, C. Chang-Hasnain, and E. R. Weber. "Structure of III-V oxides." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 942–43. http://dx.doi.org/10.1017/s0424820100167172.

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The lack of high-quality native oxides on the III-V compounds has hindered the development of III-V integrated circuits and optoelectronic technology. Recently it was shown that stable oxides can be formed in the III-V compounds rich in Al, such as AlxGa1-x As similarly as it was done in Si technology by the reaction of AlxGa1-x As with H2O vapor (in N2 carrier gas) at elevated temperatures (∼400−450°C). The high quality of these oxides was attributed to the formation of stable AlO(OH) and Al2O3 compounds. However, this conclusion was not definitive, since several Al rich compounds were proposed as well. In addition, it was never clarified whether the excess As created in this process has any role in the stabilization of these oxides, in reducing leakage current or in impurity diffusion. Moreover there is concern as to the quality of the oxide/GaAs interfaces created by lateral oxidation of an intermediate AlGaAs layer.
8

Thakur, R. P. S., R. Singh, A. J. Nelson, and A. B. Swartzlander. "Role ofinsiturapid isothermal processing in advanced III‐V technology." Journal of Applied Physics 70, no. 7 (October 1991): 3857–61. http://dx.doi.org/10.1063/1.349191.

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9

Pearton, S. J., F. Ren, S. N. G. Chu, W. S. Hobson, C. R. Abernathy, T. R. Fullowan, J. R. Lothian, R. G. Elliman, D. C. Jacobson, and J. M. Poate. "Applications of ion implantation in III–V device technology." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 79, no. 1-4 (June 1993): 648–50. http://dx.doi.org/10.1016/0168-583x(93)95434-7.

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10

Dutta, P. S. "III–V Ternary bulk substrate growth technology: a review." Journal of Crystal Growth 275, no. 1-2 (February 2005): 106–12. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.073.

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You might also be interested in the extended bibliographies on the topic 'III-V technology' for particular source types:
Journal articles Dissertations / Theses Books

Dissertations / Theses on the topic "III-V technology":

1

Moran, David A. J. "Self-aligned short gate length III-V HEMT technology." Thesis, University of Glasgow, 2004. http://theses.gla.ac.uk/6577/.

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This thesis presents a ne- approach to the fabrication of short gate length HI-V High Electron Mobility Transistors (HEMTs) that reduces the impact of external parasitic elements, and in particular access resistances, upon device performance. This was approached through the development of a self-aligned T-gate process with non-annealed ohmic contacts. The process was used to fabricate both GaAs pseudomorphic HEMT and subsequently lattice matched InP devices. In addition, a new selective recess etch was developed for cap layers containing indium. Characterisation of the self-aligned GaAs pHEMT devices indicated good RF performance with fT = 137GHz and fmax = 182GHz for devices of 120nm gate length, although DC performance was found to be restricted by the unoptimised non-annealed ohmic process. Analysis of the operation of the GaAs pHEMT devices led to the design and growth of an InP material structure incorporating double delta doping to minimise the non-annealed ohmic contact resistance. Using this optimised structure, standard and self-aligned HEMT devices with gates of length 120nm and 70nm were fabricated for comparison. The benefits and limitations of the self-aligned process were highlighted by comparing the performance of the self-aligned and standard devices. The self-aligned 120nm devices had fT = 220GHz and fmax = 255GHz, which rose to fT = 270GHz and fmax = 300GHz for the 70nm devices. Transconductance figures of up to 1500mS/mm were extracted for both. It is concluded that the self-aligned process, although beneficial to device performance at the 120nm, and to a lesser degree the 70nm node, would begin to degrade performance at reduced gate lengths due to increased parasitic gate capacitances. The non-annealed ohmic technology developed in this work provides a route that minimises parasitic resistances and increases performance without the increased parasitic gate capacitances associated with a self-aligned gate approach. A possible solution for the minimisation of parasitic gate capacitances using a self-aligned approach is proposed.
2

Green, Richard Philip. "Physics and technology of Intersubband transitions in III-V semiconductor heterostructures." Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.419619.

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3

Pacella, Nan Yang. "Platform for monolithic integration of III-V devices with Si CMOS technology." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/76119.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 169-165).
Monolithic integration of III-V compound semiconductors and Si complementary metal-oxide- semiconductor (CMOS) enables the creation of advanced circuits with new functionalities. In order to merge the two technologies, compatible substrate platforms and processing approaches must be developed. The Silicon on Lattice Engineered Silicon (SOLES) substrate allows monolithic integration. It is a Si substrate with embedded III-V template layer, which supports epitaxial IIIV device growth, consistent with present II-V technology. The structure is capped with a silicon-on-insulator (SOI) layer, which enables processing of CMOS devices. The processes required for fabricating and utilizing SOLES wafers which have Ge or InP as the III-V template layers are explored. Allowable thermal budgets are important to consider because the substrate must withstand the thermal budget of all subsequent device processing steps. The maximum processing temperature of Ge SOLES is found to be limited by its melting point. However, Ge diffuses through the buried Si0 2 and must be contained. Solutions include 1) limiting device processing thermal budgets, 2) improving buried silicon dioxide quality and 3) incorporating a silicon nitride diffusion barrier. InP SOLES substrates are created using wafer bonding and layer transfer of silicon, SOI and InP-on-Si wafers, established using a two-step growth method. Two different InP SOLES structures are demonstrated and their allowable thermal budgets are investigated. The thermal budgets appear to be limited by low quality silicon dioxide used for wafer bonding. For ultimate integration, parallel metallization of the III-V and CMOS devices is sought. A method of making ohmic contact to III-V materials through Si encapsulation layers, using Si CMOS technology, is established. The metallurgies and electrical characteristics of nickel silicide structures on Si/III-V films are investigated and the NiSi/Si/III-V structure is found to be optimal. This structure is composed of a standard NiSi/Si interface and novel Si/III-V interface. Specific contact resistivity of the double hetero-interface stack can be tuned by controlling Si/IIIV band alignments at the epitaxial growth interface. P-type Si/GaAs interfaces and n-type Si/InGaAs interfaces create ohmic contacts with the lowest specific contact resistivity and present viable structures for integration. A Si-encapsulated GaAs/AlGaAs laser with NiSi front-side contact is demonstrated and confirms the feasibility of these contact structures.
by Nan Yang Pacella.
Ph.D.
4

Dohrman, Carl Lawrence. "Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44323.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.
Includes bibliographical references (p. 165-172).
Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS using this platform is hampered by the large thickness of the Si1-xGex graded region. To address this issue, the Silicon on Lattice-engineered Silicon (SOLES) was developed, consisting of a silicon-on-insulator (SOI) structure fabricated on a Ge virtual substrate. Placement of the Si device layer at the surface makes it possible to process this platform similarly to typical SOI wafers, with the added functionality of a buried III-V template which can be used for GaAs device fabrication. This platform was fabricated using a scalable layer transfer technique. AlInGaP LEDs were also demonstrated on a SOLES substrate. In addition, an alternative growth process was investigated for Si1-xGex virtual substrates with lower threading dislocation density (TDD) and thickness. This process, the thermally relaxed ultra-thin (TRUT) buffer process, consists of coherent growth of lattice-mismatched Si1.xGex layers, followed by post-growth annealing. Growth of TRUT buffers over the Si0.5Ge0.5 to Si0.3Ge0.7 alloy range with high strain levels resulted in the nucleation of surface defects which appear to limit the maximum strain rate of compositionally graded buffers. However, application of the TRUT process in the Si0.1Ge0.9 to Ge alloy range resulted in relaxed Ge virtual substrates with a 59% reduction in TDD compared to conventional processes. Lastly, growth of high-quality lattice-matched GaAsyP1.y on Si0.5Ge0.5, Si0.3Geo.7, and Si0.2Ge0.8 virtual substrates was investigated.
(cont.) Adaptation of standard GaAs on Ge processes to this heteroepitaxial system resulted in mostly non-planar growth (similar to typical GaP growth on Si) with only limited regions of planar GaAsyP1-y layers on Si0.2Ge0.8 virtual substrates. Planar growth of GaAsyP1-y on Si0.3Ge0.7 virtual substrates was enabled by minimizing the atmospheric exposure of the Si0.3Ge0.7 as it is transferred between growth reactors, establishing that the GaAsyP1-y growth process on Si1-xGex is strongly affected by atmospheric contaminants. Further minimization of air exposure, through use of Si1-xGex homoepitaxial buffers and growth of Si1-xGex and GaAsyP1-y in a single reactor, is expected to further improve epitaxial quality across the entire lattice-matched GaAsyP1-y/Si1-xGex range, including GaP on Si.
by Carl Lawrence Dohrman.
Ph.D.
5

Perkins, James Michael 1978. "Magnetically assisted statistical assembly of III-V heterostructures on silicon : initial process and technology development." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/32712.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.
Includes bibliographical references (leaf 75).
This work is the initial investigation of magnetically assisted statistical assembly (MASA), a novel silicon I-v integration technique developed at M.I.T. Initially procedures for processing optoelectronic devices into magnetically sensitive 40 micron discs were performed and refined. Cobalt palladium thin films were obtained and their magnetic properties were studied. An initial procedure was developed to easily integrate these patterned, magnetized films with 60-micron diameter, 5-micron deep recesses. Pill devices were then integrated into these magnetically attractive recesses. The studied showed optoelectronic pills with magnetic layers could be successfully produced and collected. Assembly using these pills was performed and showed improved recess filling yields over the non-magnetic assembly, though more investigation needs to be done. MASA was shown to offer promise as a viable and promising technique for mixed device integration.
by James Michael Perkins.
S.M.
6

Medjoubi, Karim. "Investigation of new solar cell technology III-V//Si behavior under irradiations for space applications." Thesis, Institut polytechnique de Paris, 2021. http://www.theses.fr/2021IPPAX004.

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Ce travail s’intéresse au comportement en environnement spatial d’une nouvelle technologie de cellules solaires photovoltaïque : les tandems III-V//Si (2- et 3-jonctions), obtenues par collage direct. Ces cellules ont été exposé à des irradiations électrons et protons et testé dans deux type d’environnement : a) irradiance normale, 1 soleil, et température ambiante 300K, condition NIRT (orbites terrestres) et b) basse irradiance, 0,03 soleil, et basse température 120K, condition LILT (espace lointain). Dans une étape préliminaire une étude comparative a été mené sur 2 simulateurs solaires, équipés respectivement d’une lampe flash et de lampes LED, afin d’assurer la fiabilité et la reproductibilité des mesures de ces multi-jonctions. Pour le simulateur flash, une méthode de caractérisation pour tandems I-V sous 1 soleil qui s’affranchit de l’utilisation de cellules de référence isotype a été adoptée, en se basant sur des mesures d’EQE et des mesures du spectre du flash. Pour le simulateur LED, monté in-situ sur le faisceau d’irradiation, une optimisation du spectre a été effectuée afin de se rapprocher de la référence à basse irradiance, soit ~3% AM0. Cette étude comparative a également permis d’établir la validité de l’extrapolation par le calcul de mesures I-V sous 1 soleil vers les basses irradiances.Ensuite, la compatibilité de cette technologie tandem III-V//Si avec d’un part le cyclage thermique et d’autre part les irradiations a été démontrée, l’interface de collage maintient son intégrité mécanique et électrique face à ces contraintes. L’impact des irradiations sur les performances cellules a révélé certaines similitudes à 300 K et 120 K : - une décroissance marquée du courant de court-circuit (liée à la diminution de la longueur de diffusion) - une diminution plus faible de la tension de circuit-ouvert (défauts de type génération). Du fait de la connexion en séries des sous-cellules, la dégradation de la limitante Si (faible résistance intrinsèque aux irradiations) domine le comportement de la multi-jonction. Il a été démontré que l’ajout d’un nombre croissant de cellules sur le Si se traduit par une sensibilité accru aux irradiations; en effet, la configuration tandem restreint la bande d’absorption du Si au proche infrarouge, partie spectrale la plus affectée par la baisse de longueur de diffusion. L’utilisation d’un modèle basé sur l’IQE a permis de quantifier cette dégradation de longueur de diffusion dans le Si en tandem, ainsi que le coefficient de dommage. A la différence des électrons, les irradiation aux protons 1 MeV sont à l’origine d’une dégradation non-uniforme dans le Si ; par des mesures EQE couplées à de la simulation, nous avons corrélé cette dégradation non-homogène dans le Si avec la position du pic de Bragg correspondant.Pour l’étude basse température, une augmentation linéaire de l’efficacité a été observée jusqu’à ~150K ; et en deçà, des anomalies de caractéristiques I-V ont été détectées ; de type « S like shape » et « flat spot » ces défauts affectent le FF et donc le rendement. Documentées dans la littérature, ces effets sont caractéristiques des conditions LILT, et souvent liées à des modifications des interfaces métal/semi-conducteur. Bien qu’importante, la dégradation des performances électriques fin de vie LILT des III-V//Si s’avère être plus prédictible que celles des III-V/Ge LILT (dispersion statistique). Nous avons également démontré qu’un passage à 300 K, après irradiation à 120 K, entraine une guérison marquée du courant de court-circuit; ceci souligne l’importance des caractérisations in-situ pour quantifier le vieillissement cellule en conditions de fonctionnement. L’approche DDD « Displacement Damage Dose » a été appliqué pour les électrons et protons 1 MeV afin de comparer le taux de dégradation induit. Cette approche permet de prédire la dégradation de ces cellules quel que soit la fluence, les particules et l’énergie, pour une mission spatiale à 300 K
This work focuses on the behavior in space environment of a new photovoltaic solar cell technology: the III-V//Si tandems (2- and 3-junction), obtained by direct bonding. These cells have been exposed to electron and proton irradiations and tested in two types of environment: a) normal irradiance, 1 sun, and 300K room temperature, NIRT condition (Earth orbits) and b) low irradiance, 0.03 sun, and 120K low temperature, LILT condition (deep space). In a preliminary stage, a comparative study was conducted on 2 solar simulators, respectively equipped with a flash lamp and LED lamps, in order to ensure the reliability and reproducibility of the measurements of these multi-junctions. For the flash simulator, a tandems characterization method for I-V under 1 sun that dispense the use of isotype reference cells has been adopted, based on EQE and flash spectrum measurements. For the LED simulator, mounted in-situ on the irradiation beam, a spectrum optimization was performed in order to approach the low irradiance reference, i.e. ~3% AM0. This comparative study also allowed to establish the validity of the extrapolation by calculating I-V measurements under 1 sun towards low irradiances.Then, the compatibility of this tandem III-V//Si technology with thermal cycling on the one hand and irradiances on the other hand has been demonstrated. The bonding interface maintains its mechanical and electrical integrity face to these constraints. The impact of the irradiations on the cell performances has revealed certain similarities at 300 K and 120 K: - a marked decrease in the short-circuit current (linked to the decrease in the diffusion length) - a smaller decrease in the open-circuit voltage (generation type defects). Due to the series connection of the sub-cells, the degradation of the limiting Si (low intrinsic resistance to irradiation) dominates the behavior of the multi-junction. It has been shown that the addition of an increasing number of cells on the Si results in an increased sensitivity to irradiation; indeed, the tandem configuration restricts the absorption band of the Si to the near infrared, the spectral part most affected by the decrease in diffusion length. The use of a model based on the IQE allowed the qualification of this diffusion length degradation of the Si in tandem, as well as the damage coefficient. Unlike electrons, 1 MeV proton irradiations are at the origin of a non-homogeneous degradation in Si; by EQE measurements coupled with simulation, we have correlated this non-homogeneous degradation in Si with the position of the corresponding Bragg peak.For the low-temperature study, a linear increase in efficiency was observed up to ~150K; and below this, anomalies of I V characteristics were detected; of "S-like shape" and "flat spot" type, these defects affect the FF and thus the efficiency. Reported in the literature, these effects are characteristic of LILT conditions, and are often related to changes in the metal/semiconductor interfaces. Although significant, the LILT end-of-life electrical performance degradation of III-V//Si has been shown to be more predictable than that of III-V/Ge LILT (statistical dispersion). We have also shown that a 300 K annealing after irradiation at 120 K leads to a marked healing of the short-circuit current; this underlines the importance of in-situ characterizations to quantify cell aging under operating conditions. The Displacement Damage Dose (DDD) approach was applied for 1 MeV electrons and protons in order to compare the rate of induced degradation. This approach allows to predict the degradation of these cells whatever the fluence, particles and energy, for a space mission at 300 K
7

Wu, Xiaoyue. "Simulation Study of Epitaxially Regrown Vertical-Cavity Surface-Emitting Lasers." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52896.

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The vertical-cavity surface-emitting laser or VCSEL is a special type of diode laser, which has established itself in optoelectronic applications asa low-cost, high-quality miniaturized light source. The development of VCSELs can be largely promoted with support from computer simulations. In this study, we have used such simulations, on one hand to understand and improve the VCSEL performance, and on the other hand to prepare for analyzing new device concepts such as transistor-VCSELs. This thesis starts with a background introduction to the principle idea of VCSELs and then states the significance of this simulation work.Then it briefly introduces the previously used simulation workbench Sentaurus and explains the mathematical approach and the computation methods of the finally chosen simulator PICS3D. The case study of a fabricated and characterized epitaxially regrown VCSEL is the major component of this work. First the device configuration is demonstrated with detailed discussion on several design features. Second the physical models of electrical, optical and thermal phenomena along with their key parameters are presented and so are the advanced models for the active region. The main results of simulation, including steady-state characteristics and small-signal modulation, show good agreement with the experimental results and reveal some imperfections of the device design and processing, such as the overestimated stability of the regrown junction and the variation of cavity length caused by over-etch. This work is also treated as an evaluation of the simulator PICS3D, and two problems are identified: one is the troublesome way to construct a 3D device by coupling several 2D layer structures together, requiring the mesh for each layer structure to be compatible; the other would be the tricky boundary setting for the adopted method, Effective Index Method (EIM), for the transverse field calculation when only a weak index guiding effect exits in the cavity. Finally, we summarize this work and suggest some tasks for further simulations.
8

Bouillaud, Hugo. "Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences." Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.

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Les besoins exponentiels liés aux applications exploitant le domaine THz nécessitent d'accroitre l'éventail des sources disponibles et d'optimiser leur fabrication. Dans ce travail de thèse, nous nous sommes intéressés aux diodes schottky en vue de la réalisation de multiplicateurs de fréquences. Notre travail de recherche expérimental a consisté en l'optimisation des caractéristiques de diodes schottky de filière GaAs, par le développement et la mise en œuvre d'un procédé de fabrication innovant. Dans un premier temps, nous avons réalisé des diodes schottky GaAs sur substrat GaAs de différentes tailles, pour élaborer des composants de référence. Nous avons ensuite fabriqué un composant de type flip-chip pour une application de multiplication à 150 GHz en boitier guide d'ondes. Enfin, dans le but d'améliorer les performances en puissance des diodes, nous avons optimisé leur dissipation thermique en transférant leur structure épitaxiale sur un substrat bénéficiant d'une meilleure conductivité thermique : le SiHR (silicium haute résistivité). Le procédé technologique complet de ces fabrications est détaillé, puis la dernière partie de l'étude est consacrée à leurs caractérisations. D'une part, nous avons évalué les éventuelles variations sur les caractéristiques des diodes GaAs sur GaAs, induites par les différentes tailles. D'autre part nous avons comparé les deux technologies sur les substrats SiHR et GaAs. Ce travail montre l'apport que peut présenter ce type de technologie reportée, où une diminution significative de la résistance thermique des composants est observée, et est associée à un gain notable sur la résistance série
The exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance
9

Lindberg, Martin. "Mode Matching Analysis of One-Dimensional Periodic Structures." Thesis, KTH, Elektroteknisk teori och konstruktion, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-231842.

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In this thesis, we analyze the electromagnetic wave propagation in waveguidestructuresexhibiting periodical geometry, including glide symmetry. The analysisis performed using a mode matching technique which correlates the different modecoefficients from separate but, connected regions in the structure. This technique isused to obtain the dispersion diagrams for two one-dimensional periodic structures:a glide-symmetric corrugated metasurface and a coaxial line loaded with periodicholes. The mode matching formulation is presented in Cartesian and cylindricalcoordinate system for the former and the later, respectively. The mode matchingresults are compared to simulated results obtained from the Eigenmode Solver inCST Microwave Studio and are found to agree very well.
I detta examensarbete, analyseras elektromagnetisk v°agutbredning i periodiskav°agledarstrukturer som uppvisar glid symmetri. Analysen genomf¨ordes genom enmod matchnings-teknik som korrelerar de olika mod-koefficienterna fr°an separeraderegioner i strukturen med varandra. Denna teknik anv¨ands f¨or att ta framdispersionsrelationen f¨or tv°a endimensionella periodiska strukturer: en glid symmetriskkorrugerad meta-yta och en koaxial ledare belagd med periodiskt urgr¨opdah°aligheter. Mod matchnings-formuleringen presenteras i Kartesiska och cylindriskakoordinatsystem respektive f¨or de ovan n¨amnda fallen. Mod matchnings-resultatenj¨amf¨ors med data-simulerade resultat erh°allna fr°an CST Microwave Studio och de¨overenst¨ammer v¨al med varandra.
10

Fawaz, Hussein. "Technologie multifonction de transistors à effet de champ sur matériaux III-V pour logique rapide et hyperfréquences." Lille 1, 1993. http://www.theses.fr/1993LIL10038.

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Books on the topic "III-V technology":

1

Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Erol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Li, Tingkai, Michael A. Mastro, and Armin Dadgar. III-V compound semiconductors: Integration with silicon-based microelectronics. Boca Raton: Taylor & Francis, 2010.

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Conference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. Bristol, England: A. Hilger, 1988.

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Ekaterinburg, Russia) Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar "Intellektualʹnye informat︠s︡ionnye tekhnologii v. upravlencheskoĭ dei︠a︡telʹnosti" (3rd 2001. Intellektualʹnye informat︠s︡ionnye tekhnologii v upravlencheskoĭ dei︠a︡telʹnosti: III Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar, 23-24 i︠a︡nvari︠a︡ 2001 g. : materialy. Ekaterinburg: Uralʹskiĭ gos. tekhn. universitet, 2001.

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Mezhdunarodnai︠a︡, nauchnai︠a︡ konferent︠s︡ii︠a︡ "Chelovek kulʹtura i. obshchestvo v. kontekste globalizat︠s︡ii sovremennogo mira" (3rd 2004 Moscow Russia). Chelovek, kulʹtura i obshchestvo v kontekste globalizat︠s︡ii sovremennogo mira: Ėlektronnai︠a︡ kulʹtura i novye gumanitarnye tekhnologii XXI veka : materialy III Mezhdunarodnoĭ nauchnoĭ konferent︠s︡ii. Moskva: Izd-vo "Nezavisimyĭ in-t grazhdanskogo ob-va", 2004.

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Soldatkina, I͡A V., and Elena I͡Urʹevna Lazareva. Mediĭnye prot︠s︡essy v sovremennom gumanitarnom prostranstve: Podkhody k izuchenii︠u︡, ėvoli︠u︡t︠s︡ii︠a︡, perspektivy : materialy III nauchno-prakticheskoĭ konferent︠s︡ii. Moskva: MPGU, 2017.

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Belarus) Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ "Informat︠s︡ionnye sistemy i tekhnologii" (3nd 2006 Minsk. Informat︠s︡ionnye sistemy i tekhnologii (IST'2006): Tretʹi︠a︡ Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ (Minsk, 1--3 noi︠a︡bri︠a︡ 2006 g.) : materialy : v 2 chasti︠a︡kh = Information systems and technologies (IST'2006) : proceedings of the III International conference (Minsk, November 1--3, 2006) In two parts. Minsk: Akademii︠a︡ upravlenii︠a︡ pri Prezidente Respubliki Belarusʹ, 2006.

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United States. National Aeronautics and Space Administration., ed. Growth and characterization of binary and pseudo-binary III-V compounds exhibiting non-linear optical behavior and undergraduate research opportunities in microgravity science and technology. [Washington, DC: National Aeronautics and Space Administration, 1992.

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Book chapters on the topic "III-V technology":

1

Harris, J. J. "III–V Microwave Devices." In The Technology and Physics of Molecular Beam Epitaxy, 425–65. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_14.

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Iga, Kenichi, and Susumu Kinoshita. "Epitaxy of III–V Compound Semiconductors." In Process Technology for Semiconductor Lasers, 43–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-79576-3_4.

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Davies, Graham J., and David Williams. "III–V MBE Growth Systems." In The Technology and Physics of Molecular Beam Epitaxy, 15–46. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_2.

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Ilegems, M. "Properties of III–V Layers." In The Technology and Physics of Molecular Beam Epitaxy, 83–142. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_5.

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Woodall, Jerry M. "Non-Silicon MOSFET Technology: A Long Time Coming." In Fundamentals of III-V Semiconductor MOSFETs, 1–6. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_1.

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Kulkarni, Jaydeep P., and Kaushik Roy. "Technology/Circuit Co-Design for III-V FETs." In Fundamentals of III-V Semiconductor MOSFETs, 423–42. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_14.

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Moerman, I., and P. Demeester. "Advanced Epitaxial Techniques for III-V Materials." In Science and Technology of Crystal Growth, 137–48. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0137-0_11.

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Yip, Sen Po, Lifan Shen, Edwin Y. B. Pun, and Johnny C. Ho. "Properties Engineering of III–V Nanowires for Electronic Application." In Nanostructure Science and Technology, 53–82. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2367-6_3.

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Ilegems, M. "III–V Compound Semiconductor Epitaxy for Optoelectronic Integration." In Optoelectronic Integration: Physics, Technology and Applications, 61–106. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2686-5_3.

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Singh, R. B., R. S. Paroda, and Malavika Dadlani. "Science, Technology and Innovation." In India Studies in Business and Economics, 213–50. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0763-0_8.

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Abstract:
AbstractScience, technology and innovation (STI), targeted to solve both generic and location-specific challenges, are key drivers for transforming agri-food systems. These can transform the sustenance and low return livelihood to a profitable and respectable occupation for smallholder farmers, while motivating, attracting and empowering youth and women in agriculture. A paradigm shift is needed to: i) increase productivity, profitability, inclusiveness and efficiency of human engagement, ii) achieve complete nutrition security, iii) address the challenges of climate change, iv) adopt environment-friendly sustainable practices, and v) establish efficient farmer-market linkages. To achieve the desired goals, this chapter highlights effective pathways for: i) scaling innovations by combining ITK, conventional methods, and adopting NextGen cutting edge technologies evolved nationally or internationally, ii) enduring STI through a Gold Class education system, and iii) leveraging strong public-private partnership. The chapter also recommends increased investments in R&D, urgent need for enabling policy environment for scaling innovations and suggests clear transformative action points.

Conference papers on the topic "III-V technology":

1

Passlack, M., R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher, and P. Fejes. "High Mobility III-V Mosfet Technology." In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319914.

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Grant, Ian R. "Progress in III-V materials technology." In European Symposium on Optics and Photonics for Defence and Security, edited by Anthony W. Vere, James G. Grote, and Francois Kajzar. SPIE, 2004. http://dx.doi.org/10.1117/12.583023.

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Passlack, Matthias. "III–V metal-oxide-semiconductor technology." In Related Materials (IPRM). IEEE, 2008. http://dx.doi.org/10.1109/iciprm.2008.4703075.

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Chiah, Siau Ben, Xing Zhou, Binit Syamal, Kenneth Eng Kian Lee, Cheng Yeow Ng, and Eugene A. Fitzgerald. "Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms." In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278196.

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Fitzgerald, E. A., M. T. Bulsara, Y. Bai, C. Cheng, W. K. Liu, D. Lubyshev, J. M. Fastenau, et al. "Monolithic III-V/Si integration." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734819.

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Forbes, David V., Seth M. Hubbard, Christopher Bailey, Stephen Polly, John Andersen, and Ryne Raffaelle. "III-V quantum dot enhanced photovoltaic devices." In SPIE Solar Energy + Technology, edited by Loucas Tsakalakos. SPIE, 2010. http://dx.doi.org/10.1117/12.863142.

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Yao, Ruizhe, Bowen Zheng, Hyun Kum, Yunjo Kim, Sanghoon Bae, Jeehwan Kim, Hualiang Zhang, and Wei Guo. "Graphene/III-V Hybrid Diode Optical Modulator." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/cleo_at.2018.jtu2a.7.

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Takagi, Shinichi. "(III–V/Ge)-On-Insulator CMOS technology." In 2011 IEEE International SOI Conference. IEEE, 2011. http://dx.doi.org/10.1109/soi.2011.6081698.

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Deppe, Dennis G., and Diana L. Huffaker. "Native oxide technology for III-V optoelectronic devices." In Critical Review Collection. SPIE, 1998. http://dx.doi.org/10.1117/12.300617.

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Roelkens, G., L. Liu, J. Brouckaert, J. Van Campenhout, F. Van Laere, D. Van Thourhout, and R. Baets. "III-V/Silicon Photonics: Technology and Integrated Devices." In Integrated Photonics and Nanophotonics Research and Applications. Washington, D.C.: OSA, 2008. http://dx.doi.org/10.1364/ipnra.2008.imc1.

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Reports on the topic "III-V technology":

1

Muñoz, Ernesto, Iván Hernández, Francisco González, Nathalie Cely, and Iván Prieto. The Discovery of New Export Products in Ecuador. Inter-American Development Bank, June 2010. http://dx.doi.org/10.18235/0010828.

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This paper examines export diversification in Ecuador in the cases of fresh cut flowers, canned tuna, palm heart, broccoli and mangoes, using the theoretical framework on pioneers and discoveries developed by Hausmann and Rodrik (2003), as well as work by Sánchez and Butler (2006) on export costs and related uncertainties. It is found that the discoveries were mainly of traditional competitive advantage, with various degrees of technology adoption. The following policy implications are derived: i) innovative mechanisms to share the costs of new discoveries must be found and intellectual property rights strengthened; ii) cooperation among industry experts needs to improve; iii) deeper collective action to promote public-private partnerships should be undertaken; iv) relevant information and knowledge should be made available to all interested parties; and v) a national-level agenda should be undertaken to increase private investment in promising sectors while promoting the creation of public goods and minimizing rent-seeking behavior.
2

Aldendifer, Elise, McKenzie Coe, Taylor Faught, Ian Klein, Peter Kuylen, Keeli Lane, Robert Loughran, et al. The Safe and Efficient Development of Offshore Transboundary Hydrocarbons: Best Practices from the North Sea and Their Application to the Gulf of Mexico. Edited by Gabriel Eckstein. Texas A&M University School of Law Program in Energy, Environmental, & Natural Resource Systems, September 2019. http://dx.doi.org/10.37419/eenrs.offshoretransboundaryhydrocarbons.

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Offshore hydrocarbon resources have been developed for many decades, and with technology improvements, many fields which were once impossible to develop, are now economically and technologically feasible. This has led to a growing difficulty in determining the legislative and regulatory framework for resources that straddle the recognized borders between two states. In this paper, we examine a successful framework agreement governing the transboundary resources between the United Kingdom (“U.K.”) and Norway in the North Sea, and the agreement between the United States and Mexico governing the Gulf of Mexico. Following the 2013 Energy Reform, the Mexican energy sector has been revitalized, leading to greater exploration, development, and production than ever before. This means that in the near future transboundary resources may be licensed for production, bringing the issues highlighted in this paper to the attention of multiple government and international entities. This paper seeks to recommend improvements to the transboundary framework in the Gulf of Mexico based on the successful framework agreement utilized in the North Sea. This paper begins by introducing international law for offshore resources in Part II. Part III discusses the offshore regulatory regimes in the U.K. and Norway, analyzing how the two states have successfully used bilateral agreements to facilitate cooperation regarding effective exploitation and apportionment of costs from cross-boundary offshore oil and gas projects in the North Sea. Part IV discusses the offshore regulatory regimes in the United States and Mexico and analyzes the current transboundary agreement in place for the Gulf of Mexico. Part V compares the transboundary agreement governing the North Sea and the same governing the Gulf of Mexico. We highlight the major differences in the agreements and suggest changes to the Gulf of Mexico agreement based on the successful North Sea agreement. Finally, this paper concludes and provides key policy recommendations to improve the rules and regulations surrounding the exploitation of transboundary hydrocarbons in the Gulf of Mexico.
3

Wilson, Thomas E., Avraham A. Levy, and Tzvi Tzfira. Controlling Early Stages of DNA Repair for Gene-targeting Enhancement in Plants. United States Department of Agriculture, March 2012. http://dx.doi.org/10.32747/2012.7697124.bard.

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Gene targeting (GT) is a much needed technology as a tool for plant research and for the precise engineering of crop species. Recent advances in this field have shown that the presence of a DNA double-strand break (DSB) in a genomic locus is critical for the integration of an exogenous DNA molecule introduced into this locus. This integration can occur via either non-homologous end joining (NHEJ) into the break or homologous recombination (HR) between the broken genomic DNA and the introduced vector. A bottleneck for DNA integration via HR is the machinery responsible for homology search and strand invasion. Important proteins in this pathway are Rad51, Rad52 and Rad54. We proposed to combine our respective expertise: on the US side, in the design of zincfinger nucleases (ZFNs) for the induction of DNA DSBs at any desired genomic locus and in the integration of DNA molecules via NHEJ; and on the Israeli side in the HR events, downstream of the DSB, that lead to homology search and strand invasion. We sought to test three major pathways of targeted DNA integration: (i) integration by NHEJ into DSBs induced at desired sites by specially designed ZFNs; (ii) integration into DSBs induced at desired sites combined with the use of Rad51, Rad52 and Rad54 proteins to maximize the chances for efficient and precise HR-mediated vector insertion; (iii) stimulation of HR by Rad51, Rad52 and Rad54 in the absence of DSB induction. We also proposed to study the formation of dsT-DNA molecules during the transformation of plant cells. dsT-DNA molecules are an important substrate for HR and NHEJ-mediatedGT, yet the mode of their formation from single stranded T-DNA molecules is still obscure. In addition we sought to develop a system for assembly of multi-transgene binary vectors by using ZFNs. The latter may facilitate the production of binary vectors that may be ready for genome editing in transgenic plants. ZFNs were proposed for the induction of DSBs in genomic targets, namely, the FtsH2 gene whose loss of function can easily be identified in somatic tissues as white sectors, and the Cruciferin locus whose targeting by a GFP or RFP reporter vectors can give rise to fluorescent seeds. ZFNs were also proposed for the induction of DSBs in artificial targets and for assembly of multi-gene vectors. We finally sought to address two important cell types in terms of relevance to plant transformation, namely GT of germinal (egg) cells by floral dipping, and GT in somatic cells by root and leave transformation. To be successful, we made use of novel optimized expression cassettes that enable coexpression of all of the genes of interest (ZFNs and Rad genes) in the right tissues (egg or root cells) at the right time, namely when the GT vector is delivered into the cells. Methods were proposed for investigating the complementation of T-strands to dsDNA molecules in living plant cells. During the course of this research, we (i) designed, assembled and tested, in vitro, a pair of new ZFNs capable of targeting the Cruciferin gene, (ii) produced transgenic plants which expresses for ZFN monomers for targeting of the FtsH2 gene. Expression of these enzymes is controlled by constitutive or heat shock induced promoters, (iii) produced a large population of transgenic Arabidopsis lines in which mutated mGUS gene was incorporated into different genomic locations, (iv) designed a system for egg-cell-specific expression of ZFNs and RAD genes and initiate GT experiments, (v) demonstrated that we can achieve NHEJ-mediated gene replacement in plant cells (vi) developed a system for ZFN and homing endonuclease-mediated assembly of multigene plant transformation vectors and (vii) explored the mechanism of dsTDNA formation in plant cells. This work has substantially advanced our understanding of the mechanisms of DNA integration into plants and furthered the development of important new tools for GT in plants.
4

Dawson, William O., and Moshe Bar-Joseph. Creating an Ally from an Adversary: Genetic Manipulation of Citrus Tristeza. United States Department of Agriculture, January 2004. http://dx.doi.org/10.32747/2004.7586540.bard.

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Citrus is one of the major agricultural crops common to Israel and the United States, important in terms of nutrition, foreign exchange, and employment. The economy of both citrus industries have been chronically plagued by diseases caused by Citrus tristeza virus (CTV). The short term solution until virus-resistant plants can be used is the use of mild strain cross-protection. We are custom designing "ideal" protecting viruses to immunize trees against severe isolates of CTV by purposely inoculating existing endangered trees and new plantings to be propagated as infected (protected) citrus budwood. We crossed the substantial technological hurdles necessary to accomplish this task which included developing an infectious cDNA clone which allows in vitro manipulation of the virus and methods to then infect citrus plants. We created a series of hybrids between decline-inducing and mild CTV strains, tested them in protoplasts, and are amplifying them to inoculate citrus trees for evaluation and mapping of disease determinants. We also extended this developed technology to begin engineering transient expression vectors based on CTV as tools for genetic improvement of tree crops, in this case citrus. Because of the long periods between genetic transformation and the ultimate assay of mature tree characteristics, there is a great need for an effective system that allows the expression or suppression of target genes in fruiting plants. Virus-based vectors will greatly expedite progress in citrus genetic improvement. We characterized several components of the virus that provides necessary information for designing virus-based vectors. We characterized the requirements of the 3 ’-nontranslated replication promoter and two 3 ’-ORF subgenomic (sg) mRNA controller elements. We discovered a novel type of 5’-terminal sgRNAs and characterized the cis-acting control element that also functions as a strong promoter of a 3 ’-sgRNA. We showed that the p23 gene controls negative-stranded RNA synthesis and expression of 3 ’ genes. We identified which genes are required for infection of plants, which are host range determinants, and which are not needed for plant infection. We continued the characterization of native dRNA populations and showed the presence of five different classes including class III dRNAs that consists of infectious and self-replicating molecules and class V dRNAs that contain all of the 3 ’ ORFs, along with class IV dRNAs that retain non-contiguous internal sequences. We have constructed and tested in protoplasts a series of expression vectors that will be described in this proposal.
5

Kira, Beatriz, Rutendo Tavengerwei, and Valary Mumbo. Points à examiner à l'approche des négociations de Phase II de la ZLECAf: enjeux de la politique commerciale numérique dans quatre pays d'Afrique subsaharienne. Digital Pathways at Oxford, March 2022. http://dx.doi.org/10.35489/bsg-dp-wp_2022/01.

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Realities such as the COVID-19 pandemic have expedited the move to online operations, highlighting the undeniable fact that the world is continuing to go digital. This emphasises the need for policymakers to regulate in a manner that allows them to harness digital trade benefits while also avoiding associated risk. However, given that digital trade remains unco-ordinated globally, with countries adopting different approaches to policy issues, national regulatory divergence on the matter continues, placing limits on the benefits that countries can obtain from digital trade. Given these disparities, ahead of the African Continental Free Trade Area (AfCFTA) Phase II Negotiations, African countries have been considering the best way to harmonise regulations on issues related to digital trade. To do this effectively, AfCFTA members need to identify where divergencies exist in their domestic regulatory systems. This will allow AfCFTA members to determine where harmonisation is possible, as well as what is needed to achieve such harmonisation. This report analyses the domestic regulations and policies of four focus countries – South Africa, Nigeria, Kenya and Senegal – comparing their regulatory approaches to five policy issues: i) regulation of online transactions; ii) cross-border data flows, data localisation, and personal data protection; iii) access to source code and technology transfer; iv) intermediary liability; and v) customs duties on electronic transmissions. The study highlights where divergencies exist in adopted approaches, indicating the need for the four countries – and AfCFTA members in general – to carefully consider the implications of the divergences, and determine where it is possible and beneficial to harmonise approaches. This was intended to encourage AfCFTA member states to take ownership of these issues and reflect on the reforms needed. As seen in Table 1 below, the study shows that the four countries diverge on most of the five policy issues. There are differences in how all four countries regulate online transactions – that is, e-signatures and online consumer protection. Nigeria was the only country out of the four to recognise all types of e-signatures as legally equivalent. Kenya and Senegal only recognise specific e-signatures, which are either issued or validated by a recognised institution, while South Africa adopts a mixed approach, where it recognises all e-signatures as legally valid, but provides higher evidentiary weight to certain types of e-signatures. Only South Africa and Senegal have specific regulations relating to online consumer protection, while Nigeria and Kenya do not have any clear rules. With regards to cross border data flows, data localisation, and personal data protection, the study shows that all four focus countries have regulations that consist of elements borrowed from the European Union (EU) General Data Protection Regulation (GDPR). In particular, this was regarding the need for the data subject's consent, and also the adequacy requirement. Interestingly, the study also shows that South Africa, Kenya and Nigeria also adopt data localisation measures, although at different levels of strictness. South Africa’s data localisation laws are mostly imposed on data that is considered critical – which is then required to be processed within South African borders – while Nigeria requires all data to be processed and stored locally, using local servers. Kenya imposes data localisation measures that are mostly linked to its priority for data privacy. Out of the four focus countries, Senegal is the only country that does not impose any data localisation laws. Although the study shows that all four countries share a position on customs duties on electronic transmissions, it is also interesting to note that none of the four countries currently have domestic regulations or policies on the subject. The report concludes by highlighting that, as the AfCFTA Phase II Negotiations aim to arrive at harmonisation and to improve intra-African trade and international trade, AfCFTA members should reflect on their national policies and domestic regulations to determine where harmonisation is needed, and whether AfCFTA is the right platform for achieving this efficiently.
6

Joel, Daniel M., Steven J. Knapp, and Yaakov Tadmor. Genomic Approaches for Understanding Virulence and Resistance in the Sunflower-Orobanche Host-Parasite Interaction. United States Department of Agriculture, August 2011. http://dx.doi.org/10.32747/2011.7592655.bard.

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Oroginal Objectives: (i) identify DNA markers linked to the avirulence (Avr) locus and locate the Avr locus through genetic mapping with an inter-race Orobanche cumana population; (ii) develop high-throughput fingerprint DNA markers for genotypingO. cumana races; (iii) identify nucleotide binding domain leucine rich repeat (NB-LRR) genes encoding R proteins conferring resistance to O. cumana in sunflower; (iv) increase the resolution of the chromosomal segment harboring Or₅ and related R genes through genetic and physical mapping in previously and newly developed mapping populations of sunflower; and (v) develop high-throughput DNA markers for rapidly and efficiently identifying and transferring sunflower R genes through marker-assisted selection. Revisions made during the course of project: Following changes in O. cumana race distribution in Israel, the newly arrived virulent race H was chosen for further analysis. HA412-HO, which was primarily chosen as a susceptible sunflower cultivar, was more resistant to the new parasite populations than var. Shemesh, thus we shifted sunflower research into analyzing the resistance of HA412-HO. We exceeded the deliverables for Objectives #3-5 by securing funding for complete physical and high-density genetic mapping of the sunflower genome, in addition to producing a complete draft sequence of the sunflower genome. We discovered limited diversity between the parents of the O. cumana population developed for the mapping study. Hence, the developed DNA marker resources were insufficient to support genetic map construction. This objective was beyond the scale and scope of the funding. This objective is challenging enough to be the entire focus of follow up studies. Background to the topic: O. cumana, an obligate parasitic weed, is one of the most economically important and damaging diseases of sunflower, causes significant yield losses in susceptible genotypes, and threatens production in Israel and many other countries. Breeding for resistance has been crucial for protecting sunflower from O. cumana, and problematic because new races of the pathogen continually emerge, necessitating discovery and deployment of new R genes. The process is challenging because of the uncertainty in identifying races in a genetically diverse parasite. Major conclusions, solutions, achievements: We developed a small collection of SSR markers for genetic mapping in O. cumana and completed a diversity study to lay the ground for objective #1. Because DNA sequencing and SNPgenotyping technology dramatically advanced during the course of the study, we recommend shifting future work to SNP discovery and mapping using array-based approaches, instead of SSR markers. We completed a pilot study using a 96-SNP array, but it was not large enough to support genetic mapping in O.cumana. The development of further SNPs was beyond the scope of the grant. However, the collection of SSR markers was ideal for genetic diversity analysis, which indicated that O. cumanapopulations in Israel considerably differ frompopulations in other Mediterranean countries. We supplied physical and genetic mapping resources for identifying R-genes in sunflower responsible for resistance to O. cumana. Several thousand mapped SNP markers and a complete draft of the sunflower genome sequence are powerful tools for identifying additional candidate genes and understanding the genomic architecture of O. cumana-resistanceanddisease-resistance genes. Implications: The OrobancheSSR markers have utility in sunflower breeding and genetics programs, as well as a tool for understanding the heterogeneity of races in the field and for geographically mapping of pathotypes.The segregating populations of both Orobanche and sunflower hybrids are now available for QTL analyses.

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