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Journal articles on the topic 'III-V nanostructure'

Author: Grafiati

Published: 9 March 2023

Last updated: 10 March 2023

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1

Florini, Nikoletta, George P. Dimitrakopulos, Joseph Kioseoglou, Nikos T. Pelekanos, and Thomas Kehagias. "Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale." Journal of the Mechanical Behavior of Materials 26, no. 1-2 (April 25, 2017): 1–8. http://dx.doi.org/10.1515/jmbm-2017-0009.

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AbstractWe are briefly reviewing the current status of elastic strain field determination in III–V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III–V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at the interface plane and along the growth direction. Therefore, we focus on the determination of the stress-strain fields in III–V heteroepitaxial nanostructures by experimental and theoretical methods with emphasis on the numerical FE method by means of anisotropic continuum elasticity (CE) approximation. Subsequently, we present our contribution to the field by coupling FE simulations on InAs quantum dots (QDs) grown on (211)B GaAs substrate, either uncapped or buried, and GaAs/AlGaAs core-shell nanowires (NWs) grown on (111) Si, with quantitative high-resolution transmission electron microscopy (HRTEM) methods and atomistic molecular dynamics (MD) calculations. Full determination of the elastic strain distribution can be exploited for band gap tailoring of the heterostructures by controlling the content of the active elements, and thus influence the emitted radiation.

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2

Ishikawa, Tomonori, Shigeru Kohmoto, Tetsuya Nishimura, and Kiyoshi Asakawa. "In situ electron-beam processing for III–V semiconductor nanostructure fabrication." Thin Solid Films 373, no. 1-2 (September 2000): 170–75. http://dx.doi.org/10.1016/s0040-6090(00)01128-7.

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3

Babicheva, Viktoriia E. "Transition Metal Dichalcogenide Nanoantennas Lattice." MRS Advances 4, no. 41-42 (2019): 2283–88. http://dx.doi.org/10.1557/adv.2019.357.

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ABSTRACTHigh-index materials such as silicon and III-V compounds have recently gained a lot of interest as a promising material platform for efficient photonic nanostructures. Because of the high refractive index, nanoparticles of such materials support Mie resonances and enable efficient light control and its confinement at the nanoscale. Here we propose a design of nanostructure with multipole resonances where optical nanoantennas are made out of transition metal dichalcogenide, in particular, tungsten disulfide WS2. Transition metal dichalcogenide (TMDCs) possess a high refractive index and strong optical anisotropy because of their layered structure and are promising building blocks for next-generation photonic devices. Strong anisotropic response results in different components of TMDC permittivity and the possibility of tailoring nanostructure optical properties by choosing different axes and adjusting dimensions in design. The proposed periodic array of TMDC nanoantennas can be used for controlling optical resonances in the visible and near-infrared spectral ranges and engineering efficient ultra-thin optical components with nanoscale light confinement.

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4

Magno, R., and B. R. Bennett. "Nanostructure patterns written in III–V semiconductors by an atomic force microscope." Applied Physics Letters 70, no. 14 (April 7, 1997): 1855–57. http://dx.doi.org/10.1063/1.118712.

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5

Kang, M., J. H. Wu, S. Huang, M. V. Warren, Y. Jiang, E. A. Robb, and R. S. Goldman. "Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces." Applied Physics Letters 101, no. 8 (August 20, 2012): 082101. http://dx.doi.org/10.1063/1.4742863.

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6

Boroditsky, M., I. Gontijo, M. Jackson, R. Vrijen, E. Yablonovitch, T. Krauss, Chuan-Cheng Cheng, A. Scherer, R. Bhat, and M. Krames. "Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes." Journal of Applied Physics 87, no. 7 (April 2000): 3497–504. http://dx.doi.org/10.1063/1.372372.

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7

Abd-Elkader, Omar H., Abdullah M. Al-Enizi, Shoyebmohamad F. Shaikh, Mohd Ubaidullah, Mohamed O. Abdelkader, and Nasser Y. Mostafa. "Enhancing the Liquefied Petroleum Gas Sensing Sensitivity of Mn-Ferrite with Vanadium Doping." Processes 10, no. 10 (October 5, 2022): 2012. http://dx.doi.org/10.3390/pr10102012.

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Mn-Ferrite with a nanostructure is a highly valuable material in various technological fields, such as electronics, catalysis, and sensors. The proposed article presents the hydrothermal synthesis of Mn-ferrite doped with V (V) ions. The range of the doping level was from 0.0 to x to 0.20. The fluctuation in tetrahedral and octahedral site occupancies with Fe (III), Mn (II), and V (V) ions was coupled to the variation in unit cell dimensions, saturation magnetization, and LPG sensing sensitivity. The total magnetic moment shows a slow decrease with V-doping up to x = 0.1 (Ms = 51.034 emu/g), then sharply decreases with x = 0.2 (Ms = 34.789 emu/g). The dimension of the unit cell increases as x goes up to x = 0.1, then lowers to x = 0.2. As the level of V (V) ion substitution increases, the microstrain (ε) also begins to rise. The ε of a pure MnFe2O4 sample is 3.4 × 10−5, whereas for MnFe2-1.67 xVxO4 (x = 0.2) it increases to 28.5 × 10−5. The differential in ionic sizes between V (V) and Fe (III) and the generation of cation vacancies contribute to the increase in ε. The latter is created when a V (V) ion replaces 1.6 Fe (III) ions. V-doped MnFe2O4 displays improved gas-sensing ability compared to MnFe2O4 at lower operating temperature. The maximum sensing efficiency was observed for 2 wt% V-doped MnFe2O4 at a 200 °C optimum operating temperature.

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8

Yuan, Xiaoming, Dong Pan, Yijin Zhou, Xutao Zhang, Kun Peng, Bijun Zhao, Mingtang Deng, Jun He, Hark Hoe Tan, and Chennupati Jagadish. "Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions." Applied Physics Reviews 8, no. 2 (June 2021): 021302. http://dx.doi.org/10.1063/5.0044706.

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9

Cui, Jie, Masashi Ozeki, and Masafumi Ohashi. "Dynamic behavior of group III and V organometallic sources and nanostructure fabrication by supersonic molecular beams." Journal of Crystal Growth 209, no. 2-3 (February 2000): 492–98. http://dx.doi.org/10.1016/s0022-0248(99)00604-1.

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10

Torres-Jaramillo, Santiago, Camilo Pulzara-Mora, Roberto Bernal-Correa, Miguel Venegas de la Cerda, Salvador Gallardo-Hernández, Máximo López-López, and Álvaro Pulzara-Mora. "Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering." Universitas Scientiarum 24, no. 3 (November 18, 2019): 523–42. http://dx.doi.org/10.11144/javeriana.sc24-3.saos.

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Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches. In this work we report on the manufacture of a nanostructures consisting of alternating layers of In and GaAs on a silicon substrate by magnetron sputtering. Furthermore, we characterized the produced nanostructures using secondary ion mass spectroscopy (SIMS), X-ray diffraction analysis, and Raman spectroscopy. SIMS revealed variation in the concentration of In atoms across In/GaAs/In interphases, and X-ray diffraction revealed planes corresponding to phases associated with GaAs and InAs due to In interfacial diffusion across GaAs layers. Finally, in order to study the composition and crystalquality of the manufactured nanostaructures, Raman spectra were taken using laser excitation lines of 452 nm, 532 nm, and 562 nm at different points across the nanostructures.This allowed to determine the transverse and longitudinal optical modes of GaAs and InAs,characteristic of a two-mode behavior. An acoustic longitudinal vibrational mode LA(Γ) of GaAs and an acoustic longitudinal mode activated by disorder (DALA) were observed. These resulted from the substitution of Ga atoms for In atoms in high concentrations due to the generation of Ga(VGa) and/or Arsenic(VAs) vacancies.This set of analyses show that magnetron sputtering can be aviable and relatively low-cost technique to obtain this type of semiconductors.

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11

Floris, Francesco, Lucia Fornasari, Vittorio Bellani, Andrea Marini, Francesco Banfi, Franco Marabelli, Fabio Beltram, et al. "Strong Modulations of Optical Reflectance in Tapered Core–Shell Nanowires." Materials 12, no. 21 (October 31, 2019): 3572. http://dx.doi.org/10.3390/ma12213572.

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Random assemblies of vertically aligned core–shell GaAs–AlGaAs nanowires displayed an optical response dominated by strong oscillations of the reflected light as a function of the incident angle. In particular, angle-resolved specular reflectance measurements showed the occurrence of periodic modulations in the polarization-resolved spectra of reflected light for a surprisingly wide range of incident angles. Numerical simulations allowed for identifying the geometrical features of the core–shell nanowires leading to the observed oscillatory effects in terms of core and shell thickness as well as the tapering of the nanostructure. The present results indicate that randomly displaced ensembles of nanoscale heterostructures made of III–V semiconductors can operate as optical metamirrors, with potential for sensing applications.

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12

Wang, Lifeng, Juha Song, Christine Ortiz, and Mary C. Boyce. "Anisotropic design of a multilayered biological exoskeleton." Journal of Materials Research 24, no. 12 (December 2009): 3477–94. http://dx.doi.org/10.1557/jmr.2009.0443.

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Biological materials have developed hierarchical and heterogeneous material microstructures and nanostructures to provide protection against environmental threats that, in turn, provide bioinspired clues to improve human body armor. In this study, we present a multiscale experimental and computational approach to investigate the anisotropic design principles of a ganoid scale of an ancient fish, Polypterus senegalus, which possesses a unique quad-layered structure at the micrometer scale with nanostructured material constituting each layer. The anisotropy of the outermost prismatic ganoine layer was investigated using instrumented nanoindentations and finite element analysis (FEA) simulations. Nanomechanical modeling was carried out to reveal the elastic-plastic mechanical anisotropy of the ganoine composite due to its unique nanostructure. Simulation results for nanoindentation representing ganoine alternatively with isotropic, anisotropic, and discrete material properties are compared to understand the apparent direction-independence of the anisotropic ganoine during indentation. By incorporating the estimated anisotropic mechanical properties of ganoine, microindentation on a quad-layered FEA model that is analogous to penetration biting events (potential threat) was performed and compared with the quad-layered FEA model with isotropic ganoine. The elastic-plastic anisotropy of the outmost ganoine layer enhances the load-dependent penetration resistance of the multilayered armor compared with the isotropic ganoine layer by (i) retaining the effective indentation modulus and hardness properties, (ii) enhancing the transmission of stress and dissipation to the underlying dentin layer, (iii) lowering the ganoine/dentin interfacial stresses and hence reducing any propensity toward delamination, (iv) retaining the suppression of catastrophic radial surface cracking, and favoring localized circumferential cracking, and (v) providing discrete structural pathways (interprism) for circumferential cracks to propagate normal to the surface for easy arrest by the underlying dentin layer and hence containing damage locally. These results indicate the potential to use anisotropy of the individual layers as a means for design optimization of hierarchically structured material systems for dissipative armor.

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13

Gupta, Kaushik, Tina Basu, and Uday Chand Ghosh. "Sorption Characteristics of Arsenic(V) for Removal from Water Using Agglomerated Nanostructure Iron(III)−Zirconium(IV) Bimetal Mixed Oxide." Journal of Chemical & Engineering Data 54, no. 8 (August 13, 2009): 2222–28. http://dx.doi.org/10.1021/je900282m.

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14

Maliakkal, Carina B., Daniel Jacobsson, Marcus Tornberg, and Kimberly A. Dick. "Post-nucleation evolution of the liquid–solid interface in nanowire growth." Nanotechnology 33, no. 10 (December 17, 2021): 105607. http://dx.doi.org/10.1088/1361-6528/ac3e8d.

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Abstract We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au–Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III–V and II–VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.

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15

Kurowski, Ludovic, Dorothée Bernard, Eugène Constant, and Didier Decoster. "Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III–V nanostructure fabrication." Journal of Physics: Condensed Matter 16, no. 2 (December 22, 2003): S127—S132. http://dx.doi.org/10.1088/0953-8984/16/2/015.

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16

Mukherjee, K., C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, B. Bakeroot, et al. "Study and characterization of GaN MOS capacitors: Planar vs trench topographies." Applied Physics Letters 120, no. 14 (April 4, 2022): 143501. http://dx.doi.org/10.1063/5.0087245.

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Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer; (ii) the addition of the trench etch, while improving reproducibility, results in a decrease in the breakdown performance compared to the planar structures. (iii) For trench structures, the voltage for a 10 year lifetime is still above 20 V, indicating a good robustness. (iv) To review the trapping performance across the metal-dielectric-GaN stack, forward-reverse capacitance–voltage measurements with and without stress and photo-assistance are performed. Overall, as-grown planar capacitors devoid of prior etching steps show the lowest trapping, while trench capacitors have higher interface trapping and bulk trapping comparable to the blanket etched capacitors. (v) The nanostructure of the GaN/dielectric interface was characterized by high resolution scanning transmission electron microscopy. An increased roughness of 2–3 monolayers at the GaN surface was observed after blanket etching, which was correlated with the higher density of interface traps. The results presented in this paper give fundamental insight on how the etch and trench processing affects the trapping and robustness of trench-gate GaN-metal-oxide-semiconductor field effect transistors and provide guidance for the optimization of device performance.

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17

Dubrovskii V. G. and Leshchenko E. D. "Criterion for the growth selectivity of III-V and III-N nanowires on masked substrates." Technical Physics Letters 48, no. 11 (2022): 45. http://dx.doi.org/10.21883/tpl.2022.11.54889.19350.

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A model is developed for the initial stage of nucleation of III-V nanowires including nitrides (III-V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed Keywords: III-V nanowires, selective area epitaxy, masked substrate, nucleation.

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18

Дубровский, В. Г., and Е. Д. Лещенко. "Критерий селективного роста III-V и III-N нитевидных нанокристаллов на маскированных подложках." Письма в журнал технической физики 48, no. 22 (2022): 7. http://dx.doi.org/10.21883/pjtf.2022.22.53798.19350.

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A model is developed for the initial stage of nucleation of III-V nanowires including nitrides (III-V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed

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19

Reznik, R. R., K. P. Kotlyar, A. I. Khrebtov, and G. E. Cirlin. "Features of the MBE growth of nanowires with quantum dots on the silicon surface." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012032. http://dx.doi.org/10.1088/1742-6596/2086/1/012032.

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Abstract The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.

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20

Reznik, R. R., K. P. Kotlyar, V. O. Gridchin, I. V. Ilkiv, A. I. Khrebtov, Yu B. Samsonenko, I. P. Soshnikov, et al. "III-V nanostructures with different dimensionality on silicon." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012121. http://dx.doi.org/10.1088/1742-6596/2103/1/012121.

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Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

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21

Mynbaev, K. D., A. V. Shilyaev, A. A. Semakova, E. V. Bykhanova, and N. L. Bazhenov. "Luminescence of II–VI and III–V nanostructures." Opto-Electronics Review 25, no. 3 (September 2017): 209–14. http://dx.doi.org/10.1016/j.opelre.2017.06.005.

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22

Takei, Kuniharu, Rehan Kapadia, Yongjun Li, E. Plis, Sanjay Krishna, and Ali Javey. "Surface Charge Transfer Doping of III–V Nanostructures." Journal of Physical Chemistry C 117, no. 34 (August 15, 2013): 17845–49. http://dx.doi.org/10.1021/jp406174r.

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23

Alonso-González, P., L. González, D. Fuster, J. Martín-Sánchez, and Yolanda González. "Surface Localization of Buried III–V Semiconductor Nanostructures." Nanoscale Research Letters 4, no. 8 (May 9, 2009): 873–77. http://dx.doi.org/10.1007/s11671-009-9329-3.

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24

Coelho, J., G. Patriarche, F. Glas, G. Saint-Girons, and I. Sagnes. "Stress-driven self-ordering of III–V nanostructures." Journal of Crystal Growth 275, no. 1-2 (February 2005): e2245-e2249. http://dx.doi.org/10.1016/j.jcrysgro.2004.11.359.

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25

John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (November 27, 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the extraordinary electron transport properties of certain III–V compound semiconductors, III–Vs are considered a promising candidate as a channel material for future channel metal-oxide-semiconductor transistors and complementary metal-oxide-semiconductor devices. In this review, the importance of the III–V semiconductor nanostructured channel in MOSFET is highlighted with a proposed III–V GaN nanostructured channel (thickness of 10 nm); Al2O3 dielectric gate oxide based MOSFET is reported with a very low threshold voltage of 0.1 V and faster switching of the device.

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26

KOUJI, Kensuke, YouKey MATSUNAGA, and Kyozaburo TAKEDA. "Electronic and Molecular Structures of III-V Hetero-Nanostructures." Journal of Computer Chemistry, Japan 16, no. 5 (2017): 149–51. http://dx.doi.org/10.2477/jccj.2017-0060.

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27

Cipriano, Luis A., Giovanni Di Liberto, Sergio Tosoni, and Gianfranco Pacchioni. "Quantum confinement in group III–V semiconductor 2D nanostructures." Nanoscale 12, no. 33 (2020): 17494–501. http://dx.doi.org/10.1039/d0nr03577g.

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28

Reinhardt, F., B. Dwir, G. Biasiol, and E. Kapon. "Atomic force microscopy of III–V nanostructures in air." Applied Surface Science 104-105 (September 1996): 529–38. http://dx.doi.org/10.1016/s0169-4332(96)00198-5.

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29

Alvarado, S. F. "Luminescence in scanning tunneling microscopy on III–V nanostructures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 2 (March 1991): 409. http://dx.doi.org/10.1116/1.585582.

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30

Zhang, Leilei, Xing Li, Shaobo Cheng, and Chongxin Shan. "Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III–V Nanostructures." Materials 15, no. 5 (March 4, 2022): 1917. http://dx.doi.org/10.3390/ma15051917.

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III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

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31

Tan, Chee Leong, and Hooman Mohseni. "Emerging technologies for high performance infrared detectors." Nanophotonics 7, no. 1 (January 1, 2018): 169–97. http://dx.doi.org/10.1515/nanoph-2017-0061.

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AbstractInfrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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32

Vladimirova, E. V., O. I. Gyrdasova, and A. V. Dmitriev. "Synthesis of nanostructured hollow microspheres of vanadium (III, V) oxides." Nanosystems: Physics, Chemistry, Mathematics 11, no. 5 (October 30, 2020): 572–77. http://dx.doi.org/10.17586/2220-8054-2020-11-5-572-577.

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33

Fleischer, K., G. Bussetti, C. Goletti, W. Richter, and P. Chiaradia. "Optical anisotropy of Cs nanostructures on III–V(110) surfaces." Journal of Physics: Condensed Matter 16, no. 39 (September 21, 2004): S4353—S4365. http://dx.doi.org/10.1088/0953-8984/16/39/010.

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34

Jenichen, B. "X-ray investigations of III–V compounds: layers, nanostructures, surfaces." Materials Science and Engineering: B 80, no. 1-3 (March 2001): 81–86. http://dx.doi.org/10.1016/s0921-5107(00)00594-8.

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35

Coelho, J., G. Patriarche, F. Glas, I. Sagnes, and G. Saint-Girons. "Stress-engineered orderings of self-assembled III-V semiconductor nanostructures." physica status solidi (c) 2, no. 4 (March 2005): 1245–50. http://dx.doi.org/10.1002/pssc.200460413.

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36

Patsha, Avinash, Kishore K. Madapu, and S. Dhara. "Raman Spectral Mapping of III–V Nitride and Graphene Nanostructures." MAPAN 28, no. 4 (November 14, 2013): 279–83. http://dx.doi.org/10.1007/s12647-013-0082-9.

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37

Reznik R. R., Gridchin V. O., Kotlyar K. P., Khrebtov A. I., Ubyivovk E. V., Mikushev S. V., Li D., et al. "Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy." Semiconductors 56, no. 7 (2022): 492. http://dx.doi.org/10.21883/sc.2022.07.54653.16.

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The results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InGaAs quantum dots are presented. It was shown that, as in the case of the InP/InAsP material system, the formation of predominantly two objects is observed in the body of AlGaAs nanowire: InGaAs quantum dot due to axial growth and InGaAs quantum well due to radial growth. It is important to note that the grown nanostructures were formed predominantly in the wurtzite crystallographic phase. The results of the grown nanostructures physical properties studies indicate that they are promising for moving single-photon sources to the long-wavelength region. The proposed technology opens up new possibilities for integration direct-gap III-V materials with a silicon platform for various applications in photonics and quantum communications. Keywords: semiconductors, nanowires, quantum dots, III-V compounds, silicon, molecular-beam epitaxy.

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38

Ziembicki, Jakub, Paweł Scharoch, Maciej P. Polak, Michał Wiśniewski, and Robert Kudrawiec. "Band parameters of group III–V semiconductors in wurtzite structure." Journal of Applied Physics 132, no. 22 (December 14, 2022): 225701. http://dx.doi.org/10.1063/5.0132109.

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The properties of most III–V semiconductor materials in the wurtzite structure are not known because of their metastable character. However, recent advances in the growth of III–V wurtzite nanorods open new perspectives for applications. In this work, we present a systematic computational study of bulk wurtzite III–V semiconductors, using predictive ab initio methods, to provide a necessary base knowledge for studying the nanostructures. The most important physical properties of bulk systems, i.e., lattice constants, elasticity, spontaneous polarization, piezoelectricity, band structures, deformation potentials, and band offsets, have been studied. Comparison with the available experimental and theoretical data shows the high credibility of our results. Moreover, we provide a complete set of parameters for a six-band [Formula: see text] model, which is widely used for simulating devices based on semiconductor heterostructures.

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39

Sanchez, A. M., A. M. Beltran, R. Beanland, T. Ben, M. H. Gass, F. de la Peña, M. Walls, A. G. Taboada, J. M. Ripalda, and S. I. Molina. "Blocking of indium incorporation by antimony in III–V-Sb nanostructures." Nanotechnology 21, no. 14 (March 10, 2010): 145606. http://dx.doi.org/10.1088/0957-4484/21/14/145606.

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40

Benyoucef, M., M. Usman, T. Alzoubi, and J. P. Reithmaier. "Pre-patterned silicon substrates for the growth of III-V nanostructures." physica status solidi (a) 209, no. 12 (November 19, 2012): 2402–10. http://dx.doi.org/10.1002/pssa.201228367.

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Silveira, J. P., J. M. Garcia, and F. Briones. "Surface stress effects during MBE growth of III–V semiconductor nanostructures." Journal of Crystal Growth 227-228 (July 2001): 995–99. http://dx.doi.org/10.1016/s0022-0248(01)00966-6.

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42

Xu, Bo, Z. G. Wang, Y. H. Chen, P. Jin, X. L. Ye, and Feng Qi Liu. "Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices." Materials Science Forum 475-479 (January 2005): 1783–86. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1783.

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This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at ~1 µm, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

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Domashevskaya, É. P., V. A. Terekhov, V. M. Kashkarov, S. Yu Turishchev, S. L. Molodtsov, D. V. Vyalykh, D. A. Vinokurov, et al. "Synchrotron investigations of an electron energy spectrum in III–V-based nanostructures." Semiconductors 37, no. 8 (August 2003): 992–97. http://dx.doi.org/10.1134/1.1601670.

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Pang, C., and H. Benisty. "Nanostructured silicon geometries for directly bonded hybrid III–V-silicon active devices." Photonics and Nanostructures - Fundamentals and Applications 11, no. 2 (May 2013): 145–56. http://dx.doi.org/10.1016/j.photonics.2012.12.003.

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Bietti, S., C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, D. Chrastina, and A. Fedorov. "Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates." Journal of Physics: Conference Series 245 (September 1, 2010): 012078. http://dx.doi.org/10.1088/1742-6596/245/1/012078.

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46

Coelho, J., G. Patriarche, F. Glas, I. Sagnes, and G. Saint-Girons. "Dislocation networks adapted to order the growth of III-V semiconductor nanostructures." physica status solidi (c) 2, no. 6 (April 2005): 1933–37. http://dx.doi.org/10.1002/pssc.200460528.

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Glas, F., J. Coelho, G. Patriarche, and G. Saint-Girons. "Buried dislocation networks for the controlled growth of III–V semiconductor nanostructures." Journal of Crystal Growth 275, no. 1-2 (February 2005): e1647-e1653. http://dx.doi.org/10.1016/j.jcrysgro.2004.11.219.

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Mahajan, S. "Self-assembled nanostructures in mixed III–V and III–N layers and their influence on emitters." Current Opinion in Solid State and Materials Science 21, no. 4 (August 2017): 189–97. http://dx.doi.org/10.1016/j.cossms.2017.02.001.

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Rao, C. N. R., Ved Varun Agrawal, Kanishka Biswas, Ujjal K. Gautam, Moumita Ghosh, A. Govindaraj, G. U. Kulkarni, K. P. Kalyanikutty, Kripasindhu Sardar, and S. R. C. Vivekchand. "Soft chemical approaches to inorganic nanostructures." Pure and Applied Chemistry 78, no. 9 (January 1, 2006): 1619–50. http://dx.doi.org/10.1351/pac200678091619.

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Chemical approaches have emerged as the preferred means to synthesize nanostructures of various inorganic materials due to superior control over size, shape, and surface functionality. This article provides an overview of the contributions made in the authors' laboratory toward the synthesis of nanocrystals, nanowires, nanotubes, nanowalls, and other nanostructures of several inorganic materials. Thus, thiolized monodisperse metal nanocrystals have been obtained by a ligand exchange process and the stability of their 2D assemblies studied. Nanocrystals of pure CoO and ReO3 have been synthesized, for the first time, employing a one-pot solvothermal technique. The solvothermal method has also been used to obtain organic soluble nanocrystals of semiconducting materials such as CdS, CdSe, and GaN. Inorganic nanowires and nanotubes have been prepared by several soft chemical routes, including surfactant-assisted synthesis and hydrogel templating. A simple reaction between elemental Se and Te with NaBH4 in water has been utilized to obtain nanowires of Se and Te. We also describe the nebulized spray pyrolysis (NSP) technique to synthesize carbon nanotubes and nanowires of metals and III-V nitride semiconductors with improved yields. An important new technique for preparing nanocrystalline films of materials is by the reaction of the metal precursors in the organic layer at the interface of two immiscible liquids, with appropriate reagents. Nanocrystalline films of metals, alloys, and semiconductors and ultra-thin single-crystalline films of metal chalcogenides and oxides have been obtained by this technique. Apart from these, we discuss single precursor routes to iron sulfide, GeSe2, and III-V nitride nanostructures as well as the first synthesis of GaS and GaSe nanowalls and nanotubes obtained through exfoliation by laser irradiation and thermal treatment.

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Monaico, Elena I., Eduard V. Monaico, Veaceslav V. Ursaki, and Ion M. Tiginyanu. "Controlled Electroplating of Noble Metals on III-V Semiconductor Nanotemplates Fabricated by Anodic Etching of Bulk Substrates." Coatings 12, no. 10 (October 11, 2022): 1521. http://dx.doi.org/10.3390/coatings12101521.

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Porous templates are widely used for the preparation of various metallic nanostructures. Semiconductor templates have the advantage of controlled electrical conductivity. Site-selective deposition of noble metal formations, such as Pt and Au nanodots and nanotubes, was demonstrated in this paper for porous InP templates prepared by the anodization of InP wafers. Metal deposition was performed by pulsed electroplating. The produced hybrid nanomaterials were characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It was shown that uniform deposition of the metal along the pore length could be obtained with optimized pulse parameters. The obtained results are discussed in terms of the optimum conditions for effective electrolyte refreshing and avoiding its depletion in pores during the electroplating process. It was demonstrated that the proposed technology could also be applied for the preparation of metal nanostructures on porous oxide templates, when it is combined with thermal treatment for the oxidation of the porous semiconductor skeleton.

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