Relevant bibliographies by topics / III-V compound semiconductor nanostructures / Books

Books on the topic 'III-V compound semiconductor nanostructures'

To see the other types of publications on this topic, follow the link: III-V compound semiconductor nanostructures.
Author: Grafiati
Published: 6 September 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 21 books for your research on the topic 'III-V compound semiconductor nanostructures.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse books on a wide variety of disciplines and organise your bibliography correctly.

1

Yates, Martin John. Electron microscopy of compound III-V semiconductor layers. Birmingham: University ofBirmingham, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Wilmsen, Carl W., ed. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

W, Wilmsen Carl, ed. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Doping in III-V semiconductors. Cambridge [England]: Cambridge University Press, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Liquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications. Bristol: A. Hilger, 1990.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

V, Swaminathan, Pearton S. J, Manasreh Mahmoud Omar, and Materials Research Society, eds. Degradation mechanisms in III-V compound semiconductor devices and structures: Symposium held April 17-18, 1990, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1990.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Wilmsen, Carl. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer London, Limited, 2013.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Wilmsen, Carl W. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer, 2012.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials. Elsevier, 1988. http://dx.doi.org/10.1016/s0080-8784(08)x6008-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Chang, Kow-Ming. Thermodynamics of groups III-V and II-VI compound semiconductors. 1985.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
11

Pearton, S. J., D. K. Sadana, and J. M. Zavada. Advanced III-V Compound Semiconductor Growth, Processing and Devices: Volume 240. University of Cambridge ESOL Examinations, 2014.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
12

Schubert, E. F. Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). Cambridge University Press, 2005.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
13

Pearton, S. J., M. O. Manasreh, and V. Swaminathan. Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures: Volume 184. University of Cambridge ESOL Examinations, 2014.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
14

J, Pearton S., Sadana Devendra K, and Zavada J. M, eds. Advanced III-V compound semiconductor growth, processing and devices: Symposium held December 2-5, 1991, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1992.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
15

Willardson, R. K. Semiconductors and Semimetals: Iii-V Compound Semiconductors Semiconductor Properties of Superionic Materials (Semiconductors and Semimetals). Academic Press, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
16

Schulte, Donald W. Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices. 1995.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
17

(Editor), Philippe Max Fauchet, Jillian M. Buriak (Editor), Leigh T. Canham (Editor), Mobuyoshi Koshida (Editor), and Burce E. White (Editor), eds. Microcrystalline and Nanocrystalline Semiconductors--2000: Symposium Held November 27-30, 2000, Boston, Massachusetts, U.S.A. (Materials Research Society Symposia Proceedings, V. 638.). Materials Research Society, 2001.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
18

Pearton, S. J., and V. Swaminathan. Degradation Mechanisms in Iii-V Compound Semiconductor Devices and Structures: Symposium Held April 17-18, 1990, San Francisco (Materials Research Society Symposium Proceedings). Materials Research Society, 1990.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
19

Vvedensky, Dimitri D. Quantum dots: Self-organized and self-limiting assembly. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.6.

Full text
Abstract:
This article describes the self-organized and self-limiting assembly of quantum dots, with particular emphasis on III–V semiconductor quantum dots. It begins with a background on the second industrial revolution, highlighted by advances in information technology and which paved the way for the era of ‘quantum nanostructures’. It then considers the science and technology of quantum dots, followed by a discussion on methods of epitaxial growth and fabrication methodologies of semiconductor quantum dots and other supported nanostructures, including molecular beam epitaxy and metalorganic vapor-phase epitaxy. It also examines self-organization in Stranski–Krastanov systems, site control of quantum dots on patterned substrates, nanophotonics with quantum dots, and arrays of quantum dots.
APA, Harvard, Vancouver, ISO, and other styles
20

Li, Jing, and Xiao-Ying Huang. Nanostructured crystals: An unprecedented class of hybrid semiconductors exhibiting structure-induced quantum confinement effect and systematically tunable properties. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.16.

Full text
Abstract:
This article describes the structure-induced quantum confinement effect in nanostructured crystals, a unique class of hybrid semiconductors that incorporate organic and inorganic components into a single-crystal lattice via covalent (coordinative) bonds to form extended one-, two- and three-dimensional network structures. These structures are comprised of subnanometer-sized II-VI semiconductor segments (inorganic component) and amine molecules (organic component) arranged into perfectly ordered arrays. The article first provides an overview of II-VI and III-V semiconductors, II-VI colloidal quantum dots, inorganic-organic hybrid materials before discussing the design and synthesis of I-VI-based inorganic-organic hybrid nanostructures. It also considers the crystal structures, quantum confinement effect, bandgaps, and optical properties, thermal properties, thermal expansion behavior of nanostructured crystals.
APA, Harvard, Vancouver, ISO, and other styles
21

Glazov, M. M. Hyperfine Interaction of Electron and Nuclear Spins. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0004.

Full text
Abstract:
This chapter discusses the key interaction–hyperfine coupling–which underlies most of phenomena in the field of electron and nuclear spin dynamics. This interaction originates from magnetic interaction between the nuclear and electron spins. For conduction band electrons in III–V or II–VI semiconductors, it is reduced to a Fermi contact interaction whose strength is proportional to the probability of finding an electron at the nucleus. A more complex situation is realized for valence band holes where hole Bloch functions vanish at the nuclei. Here the hyperfine interaction is of the dipole–dipole type. The modification of the hyperfine coupling Hamiltonian in nanosystems is also analyzed. The chapter contains also an overview of experimental data aimed at determination of the hyperfine interaction parameters in semiconductors and semiconductor nanostructures.
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the bibliographies on the topic 'III-V compound semiconductor nanostructures' for other source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography