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1

Chuan, Feng Zhe, ed. III-nitride: Semiconductor materials. London: Imperial College Press, 2006.

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2

Omar, Manasreh Mahmoud, and Ferguson Ian T, eds. III-nitride semiconductor: Growth. New York: Taylor & Francis, 2003.

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3

Chuan, Feng Zhe, ed. III-nitride devices and nanoengineering. London: Imperial College Press, 2008.

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4

T, Yu E., and Manasreh Mahmoud Omar, eds. III-V nitride semiconductors: Applications & devices. New York: Taylor & Francis, 2003.

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5

Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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6

Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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7

Erol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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8

Symposium, on III-V. Nitride Materials and Processes (2nd 1997 Paris France). Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1998.

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9

Symposium, on III-V. Nitride Materials and Processes (1st 1996 Los Angeles Calif ). Proceedings of the First Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1996.

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10

Symposium on III-V Nitride Materials and Processes (3rd 1998 Boston, Mass.). Proceedings of the Third Symposium on III-V Nitride Materials and Processes. Edited by Moustakas T. D, Mohney S. E, Pearton S. J, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society. High Temperature Materials Division. Pennington, N.J: Electrochemical Society, Inc., 1999.

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11

Morkoç, Hadis. Gallium nitride materials and devices III: 21-24 January 2008, San Jose, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2008.

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12

Kurt, Gaskill D., Brandt Charles D, Nemanich R. J, and Materials Research Society Meeting, eds. III-Nitride, SiC, and diamond materials for electronic devices: Symposium held April, 1996, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1996.

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13

Shangjr, Gwo, ed. III-nitride materials for sensing, energy conversion and controlled light-matter interactions: Symposium held November 29-December 3, 2009, Boston, Massachusetts, U.S.A. Warrendale, Penn: Materials Research Society, 2010.

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14

Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices (2001 Washington, D.C.). III-nitride based semiconductor electronics and optical devices: And, thirty-fourth state-of-the-art-program on compound semiconductors (SOTAPOCS XXXIV) : proceedings of the international symposia. Edited by Ren F, Electrochemical Society Meeting, and State-of-the-Art Program on Compound Semiconductors (34th : 2001 : Washington, D.C.). Pennington, NJ: Electrochemical society, 2001.

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15

Erol, Ayşe, ed. Dilute III-V Nitride Semiconductors and Material Systems. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-74529-7.

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16

Rare earth doped III-nitrides for optoelectronic and spintronic applications. Dordrecht, the Netherlands: Springer, 2010.

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17

Feng, Zhe Chuan. III-Nitride Semiconductor Materials. PUBLISHED BY IMPERIAL COLLEGE PRESS AND DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO., 2006. http://dx.doi.org/10.1142/p437.

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18

Feng, Zhe Chuan. Iii-nitride Semiconductor Materials. World Scientific Publishing Company, 2006.

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19

Feng, Zhe Chuan. III-Nitride Materials Devices. World Scientific Publishing Co Pte Ltd, 2017.

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20

Moustakas, T. D. Iii-V Nitride Materials & Processes III (Electrochemical Society Proceedings). Electrochemical Society, 1998.

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21

Feng, Zhe Chuan. III-Nitride Materials, Devices and Nano-Structures. WORLD SCIENTIFIC (EUROPE), 2016. http://dx.doi.org/10.1142/q0092.

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22

Manasreh, M. O. III-Nitride Semiconductors: Electrical, Structural and Defects Properties. Elsevier Science, 2000.

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23

Omar, Manasreh Mahmoud, ed. III-nitride semiconductors: Electrical, structural, and defects properties. Amsterdam: Elsevier, 2000.

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24

Group III nitride semiconductor compounds: Physics and applications. Oxford: Clarendon Press, 1998.

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25

Yu, Edward T. III-V Nitride Semiconductors: Applications and Devices (Optoelectronic Properties of Semiconductors and Superlattices, 16). CRC, 2002.

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26

Ren, Fan, Shangjr Gwo, Ager Joel W. III, Oliver Ambacher, and Leo Schowalter. III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions: Volume 1202. University of Cambridge ESOL Examinations, 2014.

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27

Gil, Bernard. Group III Nitride Semiconductor Compounds: Physics and Applications (Series on Semiconductor Science and Technology, 6). Oxford University Press, USA, 1998.

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28

(Editor), D. Kurt Gaskill, Charles D. Brandt (Editor), and Robert J. Nemanich (Editor), eds. Iii-Nitride, Sic and Diamond Materials for Electronic Devices: Symposium Held April 8-12, 1996, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 1996.

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29

Erol, Ayse. Dilute III-V Nitride Semiconductors and Material Systems. Springer, 2008.

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30

Erol, Ayse. Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology. Springer, 2010.

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