Relevant bibliographies by topics / III-Nitride Materials

Academic literature on the topic 'III-Nitride Materials'

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Published: 6 September 2023

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Journal articles on the topic "III-Nitride Materials"

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Pampili, Pietro, and Peter J. Parbrook. "Doping of III-nitride materials." Materials Science in Semiconductor Processing 62 (May 2017): 180–91. http://dx.doi.org/10.1016/j.mssp.2016.11.006.

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Wu, Kefeng, Siyu Huang, Wenliang Wang, and Guoqiang Li. "Recent progress in III-nitride nanosheets: properties, materials and applications." Semiconductor Science and Technology 36, no. 12 (October 27, 2021): 123002. http://dx.doi.org/10.1088/1361-6641/ac2c26.

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Abstract As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.
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Hardy, Matthew T., Daniel F. Feezell, Steven P. DenBaars, and Shuji Nakamura. "Group III-nitride lasers: a materials perspective." Materials Today 14, no. 9 (September 2011): 408–15. http://dx.doi.org/10.1016/s1369-7021(11)70185-7.

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Hite, Jennifer. "Progress in periodically oriented III-nitride materials." Journal of Crystal Growth 456 (December 2016): 133–36. http://dx.doi.org/10.1016/j.jcrysgro.2016.08.042.

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Monemar, B., P. P. Paskov, J. P. Bergman, A. A. Toropov, and T. V. Shubina. "Recent developments in the III-nitride materials." physica status solidi (b) 244, no. 6 (June 2007): 1759–68. http://dx.doi.org/10.1002/pssb.200674836.

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Hangleiter, Andreas. "III–V Nitrides: A New Age for Optoelectronics." MRS Bulletin 28, no. 5 (May 2003): 350–53. http://dx.doi.org/10.1557/mrs2003.99.

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AbstractWith the advent of bright-blue light-emitting diodes in 1994, violet laser diodes in 1996, and vertical-cavity surface-emitting lasers at telecommunications wavelengths in 2000, all based on nitride-containing III–V compounds, a new age for optoelectronics began. Despite their technological success, III-nitride materials still hold some mysteries. Compared with conventional III–V semiconductors, even commercial nitride devices are of poor material quality. Due to their heteroepitaxial origin, their crystals are full of dislocations. Electrical properties, particularly in the case of p-type material, are fairly unsatisfactory. Still, light-emitting diodes with extremely high brightness and lasers with high power and good lifetime can be produced with III–V nitride compounds. In this review, we will give an overview of the essential properties of nitride materials for optoelectronic devices, their current development status, open questions, and recent device achievements.
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Moram, M. A., and S. Zhang. "ScGaN and ScAlN: emerging nitride materials." J. Mater. Chem. A 2, no. 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.

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ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.
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Ben, Jianwei, Xinke Liu, Cong Wang, Yupeng Zhang, Zhiming Shi, Yuping Jia, Shanli Zhang, et al. "2D III‐Nitride Materials: Properties, Growth, and Applications." Advanced Materials 33, no. 27 (May 28, 2021): 2006761. http://dx.doi.org/10.1002/adma.202006761.

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Speck, J. S., and S. F. Chichibu. "Nonpolar and Semipolar Group III Nitride-Based Materials." MRS Bulletin 34, no. 5 (May 2009): 304–12. http://dx.doi.org/10.1557/mrs2009.91.

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AbstractGaN and its alloys with InN and AlN are materials systems that have enabled the revolution in solid-state lighting and high-power/high-frequency electronics. GaN-based materials naturally form in a hexagonal wurtzite structure and are naturally grown in a (0001) c-axis orientation. Because the wurtzite structure is polar, GaN-based heterostructures have large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization. For optoelectronic devices, such as light-emitting diodes and laser diodes, the internal electric field is generally deleterious as it causes a spatial separation of electron and hole wave functions in the quantum wells, which, in turn, likely decreases efficiency. Growth of GaN-based heterostructures in alternative orientations, which have reduced (semipolar orientations) or no polarization (nonpolar) in the growth direction, has been a major area of research in recent years. This issue highlights many of the key developments in nonpolar and semipolar nitride materials and devices.
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Dobrinsky, A., G. Simin, R. Gaska, and M. Shur. "III-Nitride Materials and Devices for Power Electronics." ECS Transactions 58, no. 4 (August 31, 2013): 129–43. http://dx.doi.org/10.1149/05804.0129ecst.

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Dissertations / Theses on the topic "III-Nitride Materials"

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Kumaresan, Vishnuvarthan. "Novel substrates for growth of III-Nitride materials." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066538/document.

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Un des avantages majeurs des nanofils (NFs) semi-conducteurs est la possibilité d'intégrer ces nano-matériaux sur divers substrats. Cette perspective est particulièrement intéressante pour les nitrures d'éléments III qui manquent d'un substrat idéal. Nous avons étudié l'utilisation de nouveaux supports pour la croissance de NFs de GaN en épitaxie par jets moléculaires assistée par plasma. Nous avons exploré trois approches avec une caractéristique commune : le support de base est un substrat amorphe bas-coût. Pour deux d'entre elles, une fine couche d'un matériau cristallin est déposée sur ce support pour promouvoir la croissance épitaxiale des NFs. Dans la première approche, nous avons formé un film mince de Si poly-cristallin par "cristallisation induite par l'aluminium (AIC-Si)". Les conditions ont été optimisées pour obtenir une forte texture de fibre orientée [111] du film de Si qui nous a permis de faire croitre des NFs de GaN verticaux. La même idée a été mise en ¿uvre avec le graphène transféré sur SiOx. Nous avons montré pour la première fois dans la littérature que les NFs de GaN adoptent une orientation basale bien définie par rapport au graphène. La troisième approche consiste à faire croitre des NFs directement sur les substrats amorphes. Nous avons utilisé la silice thermique et la silice fondue. Nous avons examiné le temps de latence avant la formation des premiers germes et obtenu des NFs de GaN de bonne verticalité sur les deux types de silice. Sur la base de nos observations, nous concluons que la croissance épitaxiale de NFs de GaN sur graphène est particulièrement prometteuse pour le développement de dispositifs flexibles
A major advantage of semiconductor nanowires (NWs) is the possibility to integrate these nano-materials on various substrates. This perspective is particularly attractive for III-nitrides, for which there is a lack of an ideal substrate. We examined the use of novel templates for growing GaN NWs by plasma assisted molecular beam epitaxy. We explored three approaches with a common feature: the base support is a cost-efficient amorphous substrate and a thin crystalline material is deposited on the support to promote epitaxial growth of GaN NWs.In the first approach, we formed polycrystalline Si thin films on amorphous support by a process called aluminum-induced crystallization (AIC-Si). The conditions of this process were optimized to get a strong [111] fiber-texture of the Si film which enabled us to grow vertically oriented GaN NWs. The same idea was implemented with graphene as an ultimately thin crystalline material transferred on SiOx. We illustrated for the first time in literature that GaN NWs and the graphene layer have a single relative in-plane orientation. We propose a plausible epitaxial relationship and demonstrate that the number of graphene layers has a strong impact on GaN nucleation. Proof-of-concept for selective area growth of NWs is provided for these two approaches. As a simple approach, the possibility of growing NWs directly on amorphous substrates was explored. We use thermal silica and fused silica. Self-induced GaN NWs were formed with a good verticality on both substrates. Based on our observations, we conclude that the epitaxial growth of GaN NWs on graphene looks particularly promising for the development of flexible devices
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Kim, Kyounghoon. "Growth and characterization of III-nitride photonic materials /." Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.

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Ren, Christopher Xiang. "Multi-microscopy characterisation of III-nitride devices and materials." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/264158.

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III-nitride optoelectronic devices have become ubiquitous due to their ability to emit light efficiently in the blue and green spectral ranges. Specifically, III-nitride light emitting diodes (LEDs) have become widespread due to their high brightness and efficiency. However, III-nitride devices such as single photon sources are also the subject of research and are promising for various applications. In order to improve design efficient devices and improve current ones, the relationship between the structure of the constituent materials and their optical properties must be studied. The optical properties of materials are often examined by photoluminescence or cathodoluminescence, whilst traditional microscopy techniques such a transmission electron microscopy and scanning electron microscopy are used to elucidate their structure and composition. This thesis describes the use of a dual-beam focussed ion beam/scanning electron microscope (FIB/SEM) in bridging the gap between these two types of techniques and providing a platform on which to perform correlative studies between the optical and structural properties of III-nitride materials. The heteroepitaxial growth of III-nitrides has been known to produce high defect densities, which can harm device performance. We used this correlative approach to identify hexagonal defects as the source of inhomogeneous electroluminescence (EL) in LEDs. Hyperspectral EL mapping was used to show the local changes in the emission induced by the defects. Following this the FIB/SEM was used to prepare TEM samples from the apex of the defects, revealing the presence of p-doped material in the active region caused by the defect. APSYS simulations confirmed that the presence of p-doped material can enhance local EL. The deleterious effects of defects on the photoelectrochemical etching of cavities were also studied. We performed TEM analysis of an edge-defect contained in unetched material on the underside of a microdisk using FIB/SEM sample preparation methods. The roughness and morphology of microdisk and nanobeam cavities was studied using FIB-tomography (FIBT), demonstrating how the dual-beam instrument may be used to access the 3D morphology of cavities down to the resolution of the SEM and the slicing thickness of the FIB. This tomography approach was further extended with electron tomography studies of the nanobeam cavities, a technique which provided fewer issues in terms of image series alignment but also the presence of reconstruction artefacts which must be taken into account when quantitatively analysing the data. The use of correlative techniques was also used to establish the link between high Si content in an interlayer running along the length of microrods with changes in the optical emission of these rods. The combination of CL, FIB/SEM and TEM-based techniques has made it possible to gain a thorough understanding of the link between the structural and optical properties in a wide variety of III-nitride materials and devices.
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Zhang, Hengfang. "Hot-wall MOCVD of N-polar group-III nitride materials." Licentiate thesis, Linköpings universitet, Halvledarmaterial, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-175502.

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Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). This makes III-nitride materials suitable for high-efficient and energy-saving optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes (LDs). The Nobel Prize in Physics 2014 was awarded for the invention of efficient GaN blue LEDs, which further accelerated the research in the field of group III-nitride materials. GaN and related alloys are also suitable for high-temperature, high-power and high-frequency electronic devices with performance that cannot be delivered by other semiconductor technologies such as silicon (Si) and gallium arsenide (GaAs). For example, GaN-based high electron mobility transistors (HEMTs) have been widely adopted for radio frequency (RF) communication and power amplifiers, high-voltage power switches in radars, satellites, and wireless base stations for 5G.  Recently, nitrogen (N)-polar group-III nitrides have drawn much attention due to their advantages over their metal-polar counterparts in e.g. HEMTs. These include feasibility to fabricate ohmic contacts with low resistance, an enhanced carrier confinement with a natural back barrier, and improved device scalability. Despite intensive research, the growth of micrometer-thick high-quality N-polar GaN based materials remains challenging. One of the major problems to develop device-quality N-polar nitrides is the high surface roughness, which results from the formation of hexagonal hillocks or step-bunching. Another significant hurdle is the unintentional polarity inversion, which reduces the crystalline quality and prohibits device fabrication.  This licentiate thesis focuses on the development of N-polar AlN and GaN heterostructures on SiC substrates for HEMT RF applications. The overall aim is to exploit the advantages of the hot-wall MOCVD concept to grow high-quality N-polar HEMT structures for higher operational frequencies and improved device performance. In order to achieve this goal, special effort is dedicated to understanding the effects of growth conditions and substrate orientation on the structural properties and polarity of AlN, GaN and AlGaN grown by hot-wall MOCVD. N-polar AlN nucleation layers (NLs) with layer by layer growth mode and step-flow growth mode can be achieved on on-axis and 4_ offaxis SiC (000¯1), respectively, by carefully controlling V/III ratio and growth temperature. Utilizing scanning transmission electron microscopy (STEM) we have established a comprehensive picture of the atomic arrangements, local polarity and polarity evolution in AlN, GaN/AlN and AlGaN/GaN/AlN in the cases of low-temperature and high-temperature AlN NLs both for on-axis and off-axis substrates. We have shown that typically employed methods for polarity determination using potassium hydroxide wet etching could not provide conclusive results in the case of mixed-polar AlN as Al-polar domains may be easily over-etched and remain undetected. Atomic scale electron microscopy is therefore needed to accurately determine the polarity. We further have developed growth strategy and have optimized the epitaxial process for N-polar GaN, and have demonstrated high quality N-polar AlGaN/GaN/AlN heterostructures.

Additional funding agencies: Chalmers University of technology; ABB; Ericsson; Epiluvac; FMV; Gotmic; Saab; SweGaN; UMS; Swedish Foundation for Strategic Research under Grants No. FL12-0181, No. RIF14-055, and No. EM16-0024; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University, Faculty Grant SFO Mat LiU No.2009- 00971.

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West, Allen M. "Effects of dislocations on electronic properties of III-nitride materials." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009281.

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Bao, An. "Investigation on the properties of nanowire structures and hillocks of Group-III nitride materials." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/276187.

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Group-III nitride materials are increasingly important, because of their semiconducting properties and bandgaps tuneable across a wide range from the infrared to ultraviolet. They are of particular interest for optoelectronic and power electronic applications. The studies on nitride materials are comprehensive, and one way to categorise them is based on the scale of the material, namely: (a) 3D bulk materials, for example the development of 3D bulk nitride substrate; (b) epitaxial layers, for example GaN/InGaN 2D quantum well based light emitting diodes (LEDs); (c) 1D nitride nanowires and (d) 0D quantum dots, for example InGaN quantum dot based single photon sources. This thesis uses a multimicroscopy concept to investigate various group-III nitride nanowires and hillocks. Multiple different microscopy techniques were applied to the same specific nanostructure or defect. This allows the properties of the materials of interest to be linked directly to the nanostructures or defects, providing a more complete picture of the samples that have been studied. The multiple microscopy techniques used to conduct the work in this thesis include (scanning) transmission electron microscopy ((S)TEM), cathodoluminescence (CL), focused ion beam (FIB) and atomic force microscopy (AFM). Specifically, AFM was used to characterise the morphology of the sample on a sub-nanometer scale. The crystalline structures were characterised using (S)TEM, and the in-situ energy dispersive X-ray spectroscopy (EDS) was used to conduct compositional analysis of the selected sites. CL was used to reveal the optoelectronic properties by analysing the emission wavelengths of the materials, excited by the electron beam. FIB was the technique used to prepare site-specific samples to be measured in (S)TEM. A detailed explanation of these characterisation techniques was also included. In the context of the studies on nitride materials, nitride nanowires and their heterostructures are a particular research focus. They combine the unique properties of III-nitride materials together with the advantages induced by the nanowire geometry. This thesis explores three different nanowire systems: a GaN nanowire structure incorporating a GaN/Sc$_x$Ga$_{1-x}$N axial heterostructure grown by molecular beam epitaxy (MBE); GaN/InGaN core-shell nanowires fabricated by a hybrid approach combining metalorganic vapour phase epitaxy (MOVPE) and dry etching techniques; and AlGaN nanowires on free standing AlGaN substrates fabricated by MBE and inductively coupled plasma (ICP) etching. The optoelectronic properties, compositions and structures of these nanowires were studied in detail. Moreover, a comprehensive review on the properties, growth methods and applications of group-III nitride nanowires is also included in this thesis. Apart from nanowires, a lot of effort has been focusing on the improvement of the quality of epitaxial layers of GaN and its alloys, and they currently have an even wider perspective than nitride nanowires. The understanding of defects within the epitaxial layers is crucial in order to mitigate the their adverse effects, leading to the increased emphasis on defect analysis. Hillocks are a type of defects found on GaN epilayers, which are less well studied than other defects such as dislocations and stacking faults. As a consequence, the formation mechanisms of hillocks remain controversial. In this context, after a review on the past studies on GaN hillocks, this thesis also investigates two types of hillocks, i.e. hillocks on GaN p-i-n diodes and hillocks on GaN grown on patterned sapphire substrates (PSS). Their nanoscale structures, properties and formation mechanisms are studied.
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Eiting, Christopher James. "Growth of III-V nitride materials by MOCVD for device applications /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Crawford, Samuel Curtis. "Synthesis of III-V nitride nanowires with controlled structure, morphology, and composition." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/88370.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 173-182).
The III-V nitride materials system offers tunable electronic and optical properties that can be tailored for specific electronic and optoelectronic applications by varying the (In,Ga,Al)N alloy composition. While nitride thin films tend to suffer from high dislocation densities due to the lattice mismatch with growth substrates, nanowires can be grown dislocation-free on highly mismatched substrates including silicon. Furthermore, axial and radial junction configurations offer unique nanoscale device architectures that enable more optimal device design. In order to realize the potential benefits of III-V nitride nanowires, precise control of nanowire synthesis is required. This thesis describes the development of experimental techniques and theoretical models that guide the synthesis of Ill-V nitride and other compound semiconductor nanowires with control over material structure, morphology, and composition. First, GaN nanowires were synthesized with control over nanowire orientation, morphology, and defect density. Substrate orientation was used to control whether nanowires grew preferentially in the polar [0001] direction or the nonpolar [1-100] direction. Film deposition on the nanowire sidewalls was effectively minimized by reducing the Ga precursor flux and internanowire spacing. Using nonpolar-oriented GaN nanowires with uniform diameter, the diameter-dependent growth rate was modeled to demonstrate that growth is limited by nucleation at the perimeter of the seed/nanowire interface. Finally, Ni- and Au-seeded GaN nanowires were directly compared, and the higher growth rate and reduced defect density in Ni-seeded nanowires were consistent with a reduced seed/nanowire interfacial energy. Next, nonpolar-oriented InN/InGaN axial heterostructure nanowires were grown by introducing Ga precursors during InN nanowire growth. The formation of GaN shells placed an upper limit on the allowable Ga precursor flux. Shell deposition was minimized by operating at higher temperature and pressure. However, a reduction in the local supply of Ga to the seed particle also limited InGaN formation. Therefore, brief high-flux pulses were used at lower pressure to form InN/InGaN axial heterostructures with minimal shell formation. Electron tomography and energy dispersive X-ray spectroscopy were used to analyze the Ga-driven driven changes in nanowire morphology and composition, respectively. The reduction in nanowire diameter upon the introduction of Ga was found to be driven by changes in seed particle composition. A flow-controlled approach was developed to modulate the diameter along individual nanowires, which can enable unique properties including enhanced light trapping in nanowire arrays and increased phonon scattering in thermoelectrics. In InN nanowires, a reduction in V flow produced segments with larger diameters and slower growth rates. A reduction in III flow in GaN nanowires also produced segments with slower growth rates, but thinner diameters. These trends are a consequence of the separate pathways traveled by the III and V sources to the site of reaction, enabling control over the incorporation rate of III source into the seed particle and the extraction rate of III source out of the seed particle, respectively. Based on these promising results, models were developed to explore the potential for template-free nanowire diameter modulation via particle-mediated growth. The results from diameter-modulated InN and GaN nanowires were evaluated considering contributions of seed particle volume, wetting angle, and three-dimensional morphology to the observed diameter changes. To achieve large diameter ratios using liquid seed particles, significant changes in both seed particle volume and wetting angle are necessary. Furthermore, the model was used to evaluate the surface energy and morphology of the liquid/solid interface. The interface was found to not be flat, contrary to common assumptions, which has significant implications for nanowire growth models. Finally, we extended the flow-controlled diameter modulation approach to GaAs nanowires, demonstrating that the technique is generally applicable to particle-mediated compound semiconductor nanowires. Both the III and V sources were varied during growth, producing similar trends in diameter and growth rate as with III-V nitride nanowires. Notably, three different types of [111]B-oriented nanowires were observed and had discrete differences in diameter modulation, growth rate, and cross-sectional shape, which were attributed to differences in seed particle phase. By controlling growth conditions during nanowire nucleation, each of the three types of nanowires were preferentially produced, indicating that the seed particle phase can be controllably varied in compound-forming seed alloys. Together, these results provide a foundation for fabricating III-V nitride and other nanowires with control over material structure, morphology, and composition. Experimental techniques and theoretical models were developed that enable control over growth direction, tapering, growth rate, defect density, composition, and diameter. These tools are helpful in achieving nanowires with rationally tailored properties for functional nanowire-based devices.
by Samuel Curtis Crawford.
Ph. D.
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Nguyen, Hieu. "Molecular beam epitaxial growth, characterization and device applications of III-Nitride nanowire heterostructures." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=107905.

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Recently, group III-nitride nanowire heterostructures have been extensively investigated. Due to the effective lateral stress relaxation, such nanoscale heterostructures can be epitaxially grown on silicon or other foreign substrates and can exhibit drastically reduced dislocations and polarization fields, compared to their planar counterparts. This dissertation reports on the achievement of a new class of III-nitride nanoscale heterostructures, including InGaN/GaN dot-in-a-wires and nearly defect-free InN nanowires on a silicon platform. We have further developed a new generation of nanowire devices, including ultrahigh-efficiency full-color light emitting diodes (LEDs) and solar cells on a silicon platform.We have identified two major mechanisms, including poor hole transport and electron overflow, that severely limit the performance of GaN-based nanowire LEDs. With the incorporation of the special techniques of p-type modulation doping and AlGaN electron blocking layer in the dot-in-a-wire LED active region, we have demonstrated phosphor-free white-light LEDs that can exhibit, for the first time, internal quantum efficiency of > 50%, negligible efficiency droop up to ~ 2,000A/cm2, and extremely high stable emission characteristics at room temperature, which are ideally suited for future smart lighting and full-color display applications.We have also studied the epitaxial growth, fabrication and characterization of InN:Mg/i-InN/InN:Si nanowire axial structures on n-type Si(111) substrates and demonstrated the first InN nanowire solar cells. Under one-sun (AM 1.5G) illumination, the devices exhibit a short-circuit current density of ~ 14.4 mA/cm2, open circuit voltage of 0.14 V , fill factor of 34.0%, and energy conversion efficiency of 0.68%. This work opens up exciting possibilities for InGaN nanowire-based, full solar-spectrum third-generation solar cells.
Récemment, les hétérostructures à base de nitride et de groupe III ont fait l'objet de recherches intensives. Grâce à la relaxation latérale effective du stress, de telles hétérostructures d'échelle nanométrique peuvent être déposés sur du Silicium ou d'autres substrats. Celles-ci démontrent une réduction dramatique des dislocations et des champs de polarisations comparativement à leurs contreparties planes. Cette dissertation rapporte l'accomplissement d'une nouvelle classe de matériau nanométrique, soit des hétérostructures III-nitride incluant InGaN/GaN point dans fils ainsi que des nanofils d'InN presque sans défauts sur du Silicium. De plus, nous avons développé une nouvelle génération de dispositifs à base de nanofils, incluant des diodes émettrices de lumière (LEDs) à efficacité ultra haute et spectre visible complet ainsi que des cellules solaires sur une gaufre de Silicium. Nous avons identifié 2 mécanismes majeurs, incluant le faible transport des trous et le surplus d'électrons, qui limitent sérieusement la performance des LEDs à base de nanofils de GaN. Avec l'ajout de certaines techniques spéciales de modulation de type p, et une couche bloquante d'électrons faite de AlGaN dans la région active de la LED point dans fil. Par ailleurs, nous avons démontré des LEDs blanche sans phosphore qui démontrent, pour la première fois, une efficacité quantique supérieure à 50% ainsi qu'une baisse d'efficacité négligeable jusqu'à ~ 2,000A/cm2 et des caractéristiques d'émissions très hautes et stables à température pièce. Celles-ci sont donc toutes désignées pour des applications d'illumination intelligentes et des écrans pleines couleurs. La croissance par épitaxie, la fabrication et la caractérisation des nanofils d'InN:Mg/i-InN/InN:Si axiaux sur des substrats de Si(111) de type n et démontré la première cellule solaire à base d'InN. Sous l'illumination d'un soleil (AM 1.5G), les dispositifs démontrent une densité de courant de ~ 14.4 mA/cm2 en court-circuit, un voltage de circuit ouvert de 0.14V, un facteur de remplissage de 34.0% et une efficacité de conversion d'énergie de 0.68%. Ce travail ouvre des portes excitantes pour des cellules solaires plein spectre de troisième génération à base de nanofils d'InGaN.
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Eriksson, Martin. "Photoluminescence Characteristics of III-Nitride Quantum Dots and Films." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-139766.

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III-Nitride semiconductors are very promising in both electronics and optical devices. The ability of the III-Nitride semiconductors as light emitters to span the electromagnetic spectrum from deep ultraviolet light, through the entire visible region, and into the infrared part of the spectrum, is a very important feature, making this material very important in the field of light emitting devices. In fact, the blue emission from Indium Gallium Nitride (InGaN), which was awarded the 2014 Nobel Prize in Physics, is the basis of the common and important white light emitting diode (LED). Quantum dots (QDs) have properties that make them very interesting for light emitting devices for a range of different applications, such as the possibility of increasing device efficiency. The spectrally well-defined emission from QDs also allows accurate color reproduction and high-performance communication devices. The small size of QDs, combined with selective area growth allows for an improved display resolution. By control of the polarization direction of QDs, they can be used in more efficient displays as well as in traditional communication devices. The possibility of sending out entangled photon pairs is another QD property of importance for quantum key distribution used for secure communication. QDs can hold different exciton complexes, such as the neutral single exciton, consisting of one electron and one hole, and the biexciton, consisting of two excitons. The integrated PL intensity of the biexciton exhibits a quadratic dependence with respect to the excitation power, as compared to the linear power dependence of the neutral single exciton. The lifetime of the neutral exciton is 880 ps, whereas the biexciton, consisting of twice the number of charge carriers and lacks a dark state, has a considerably shorter lifetime of only 500 ps. The ratio of the lifetimes is an indication that the size of the QD is in the order of the exciton Bohr radius of the InGaN crystal making up these QDs in the InGaN QW. A large part of the studies of this thesis has been focused on InGaN QDs on top of hexagonal Gallium Nitride (GaN) pyramids, selectively grown by Metal Organic Chemical Vapor Deposition (MOCVD). On top of the GaN pyramids, an InGaN layer and a GaN capping layer were grown. From structural and optical investigations, InGaN QDs have been characterized as growing on (0001) facets on truncated GaN pyramids. These QDs exhibit both narrow photoluminescence linewidths and are linearly polarized in directions following the symmetry of the pyramids. In this work, the neutral single exciton, and the more rare negatively charged exciton, have been investigated. At low excitation power, the integrated intensity of the PL peak of the neutral exciton increases linearly with the excitation power. The negatively charged exciton, on the other hand, exhibits a quadratic power dependence, just like that of the biexciton. Upon increasing the temperature, the power dependence of the negatively charged exciton changes to linear, just like the neutral exciton. This change in power dependence is explained in terms of electrons in potential traps close to the QD escaping by thermal excitation, leading to a surplus of electrons in the vicinity of the QD. Consequently, only a single exciton needs to be created by photoexcitation in order to form a negatively charged exciton, while the extra electron is supplied to the QD by thermal excitation. Upon a close inspection of the PL of the neutral exciton, a splitting of the peak of just below 0.4 meV is revealed. There is an observed competition in the integrated intensity between these two peaks, similar to that between an exciton and a biexciton. The high energy peak of this split exciton emission is explained in terms of a remotely charged exciton. This exciton state consists of a neutral single exciton in the QD with an extra electron or hole in close vicinity of the QD, which screens the built-in field in the QD. The InGaN QDs are very small; estimated to be on the order of the exciton Bohr radius of the InGaN crystal, or even smaller. The lifetimes of the neutral exciton and the negatively charged exciton are approximately 320 ps and 130 ps, respectively. The ratio of the lifetimes supports the claim of the QD size being on the order of the exciton Bohr radius or smaller, as is further supported by power dependence results. Under the assumption of a spherical QD, theoretical calculations predict an emission energy shift of 0.7 meV, for a peak at 3.09 eV, due to the built-in field for a QD with a diameter of 1.3 nm, in agreement with the experimental observations. Studying the InGaN QD PL from neutral and charged excitons at elevated temperatures (4 K to 166 K) has revealed that the QDs are surrounded by potential fluctuations that trap charge carriers with an energy of around 20 meV, to be compared with the exciton trapping energy in the QDs of approximately 50 meV. The confinement of electrons close to the QD is predicted to be smaller than for holes, which accounts for the negative charge of the charged exciton, and for the higher probability of capturing free electrons. We have estimated the lifetimes of free electrons and holes in the GaN barrier to be 45 ps and 60 ps, in consistence with excitons forming quickly in the barrier upon photoexcitation and that free electrons and holes get trapped quickly in local potential traps close to the QDs. This analysis also indicates that there is a probability of 35 % to have an electron in the QD between the photoexcitation pulses, in agreement with a lower than quadratic power dependence of the negatively charged exciton. InN is an attractive material due to its infrared emission, for applications such as light emitters for communication purposes, but it is more difficult to grow with high quality and low doping concentration as compared to GaN. QDs with a higher In-composition or even pure InN is an interesting prospect as being a route towards increased quantum confinement and room temperature device operation. For all optical devices, p-type doping is needed. Even nominally undoped InN samples tend to be heavily n-type doped, causing problems to make pn-junctions as needed for LEDs. In our work, we present Mg-doped p-type InN films, which when further increasing the Mg-concentration revert to n-type conductivity. We have focused on the effect of the Mg-doping on the light emission properties of these films. The low Mg doped InN film is inhomogeneous and is observed to contain areas with n-type conductivity, so called n-type pockets in the otherwise p-type InN film. A higher concentration of Mg results in a higher crystalline quality and the disappearance of the n-type pockets. The high crystalline quality has enabled us to determine the binding energy of the Mg dopants to 64 meV. Upon further increase of the Mg concentration, the film reverts to ntype conductivity. The highly Mg doped sample also exhibits a red-shifted emission with features that are interpreted as originating from Zinc-Blende inclusions in the Wurtzite InN crystal, acting as quantum wells. The Mg doping is an important factor in controlling the conductivity of InN, as well as its light emission properties, and ultimately construct InN-based devices. In summary, in this thesis, both pyramidal InGaN QDs and InGaN QDs in a QW have been investigated. Novel discoveries of exciton complexes in these QD systems have been reported. Knowledge has also been gained about the challenging material InN, including a study of the effect of the Mg-doping concentration on the semiconductor crystalline quality and its light emission properties. The outcome of this thesis enriches the knowledge of the III-Nitride semiconductor community, with the long-term objective to improve the device performance of III-Nitride based light emitting devices.
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Books on the topic "III-Nitride Materials"

1

Chuan, Feng Zhe, ed. III-nitride: Semiconductor materials. London: Imperial College Press, 2006.

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Omar, Manasreh Mahmoud, and Ferguson Ian T, eds. III-nitride semiconductor: Growth. New York: Taylor & Francis, 2003.

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Chuan, Feng Zhe, ed. III-nitride devices and nanoengineering. London: Imperial College Press, 2008.

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T, Yu E., and Manasreh Mahmoud Omar, eds. III-V nitride semiconductors: Applications & devices. New York: Taylor & Francis, 2003.

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Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Erol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Symposium, on III-V. Nitride Materials and Processes (2nd 1997 Paris France). Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1998.

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Symposium, on III-V. Nitride Materials and Processes (1st 1996 Los Angeles Calif ). Proceedings of the First Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1996.

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Symposium on III-V Nitride Materials and Processes (3rd 1998 Boston, Mass.). Proceedings of the Third Symposium on III-V Nitride Materials and Processes. Edited by Moustakas T. D, Mohney S. E, Pearton S. J, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society. High Temperature Materials Division. Pennington, N.J: Electrochemical Society, Inc., 1999.

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Book chapters on the topic "III-Nitride Materials"

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Shen, Bo, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, et al. "III-Nitride Materials and Characterization." In Handbook of GaN Semiconductor Materials and Devices, 3–52. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-1.

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Nakamura, Shuji. "III-V Nitride Based LEDs." In GaN and Related Materials, 471–507. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-15.

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Binari, Steven C., and Harry B. Dietrich. "III-V Nitride Electronic Devices." In GaN and Related Materials, 509–34. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-16.

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Li, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. "Epitaxial of III-Nitride LED Materials." In Springer Series in Materials Science, 33–73. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3_4.

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Wong, William S., Timothy D. Sands, and Nathan W. Cheung. "Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off." In III-V Nitride Semiconductors, 107–59. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-3.

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Bisi, Davide, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni. "Reliability in III-Nitride Devices." In Handbook of GaN Semiconductor Materials and Devices, 367–430. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-12.

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Lin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung (Henry) Kuo, Wei-Chih Lai, and Jinn-Kong Sheu. "III–V Nitride-Based Photodetection." In Handbook of GaN Semiconductor Materials and Devices, 597–613. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-19.

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Lin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung Kuo, Wei-Chih Lai, and Jinn-Kong Sheu. "III–V Nitride-Based Photodetection." In Handbook of GaN Semiconductor Materials and Devices, 597–613. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-25.

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Li, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. "III-Nitride LED Chip Fabrication Techniques." In Springer Series in Materials Science, 151–83. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3_8.

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Li, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. "Packaging of Group-III Nitride LED." In Springer Series in Materials Science, 185–202. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3_9.

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Conference papers on the topic "III-Nitride Materials"

1

Sakr, Salam, Maria Tchernycheva, Juliette Mangeney, Elias Warde, Nathalie Isac, Lorenzo Rigutti, Raffaele Colombelli, et al. "III-nitride intersubband photonics." In Gallium Nitride Materials and Devices VII. SPIE, 2012. http://dx.doi.org/10.1117/12.900002.

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Ager III, Joel W., Junqiao Wu, Kin M. Yu, R. E. Jones, S. X. Li, Wladek Walukiewicz, Eugene E. Haller, Hai Lu, and William J. Schaff. "Group III-nitride alloys as photovoltaic materials." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by Ian T. Ferguson, Nadarajah Narendran, Steven P. DenBaars, and John C. Carrano. SPIE, 2004. http://dx.doi.org/10.1117/12.561935.

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Zhang, Jing, and Nelson Tansu. "Development of III-Nitride Thermoelectric Characterizations and Materials." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/acp.2013.ath4k.2.

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Zhang, Jing, and Nelson Tansu. "Development of III-Nitride Thermoelectric Characterizations and Materials." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/acpc.2013.ath4k.2.

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Smith, David J., Lin Zhou, and T. D. Moustakas. "Structural characterization of III-nitride materials and devices." In SPIE OPTO, edited by Manijeh Razeghi, Rengarajan Sudharsanan, and Gail J. Brown. SPIE, 2011. http://dx.doi.org/10.1117/12.877470.

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Chow, Peter P., Jody J. Klaassen, James M. Van Hove, Andrew M. Wowchak, Christina Polley, and David King. "Group III-nitride materials for ultraviolet detection applications." In Symposium on Integrated Optoelectronics, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 2000. http://dx.doi.org/10.1117/12.382130.

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Davies, Ryan, Mat Ivill, Jennifer Hite, Brent Gila, Gerald Thaler, Cammy Abernathy, S. Pearton, Christopher Stanton, and John Zavada. "Gd-doped III-nitride Dilute Magnetic Semiconductor Materials." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1111-d03-05.

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Rao, Dheemahi, Ashalatha Indiradevi Kamalasanan Pillai, Magnus Garbrecht, and Bivas Saha. "Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices." In Neuromorphic Materials, Devices, Circuits and Systems. València: FUNDACIO DE LA COMUNITAT VALENCIANA SCITO, 2023. http://dx.doi.org/10.29363/nanoge.neumatdecas.2023.052.

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Bhattacharya, Arnab. "2D layered materials: novel substrates for III-nitride growth." In International Conference on Fibre Optics and Photonics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/photonics.2014.m2b.3.

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Ruden, P. P. "Materials-theory-based device modeling for III-nitride devices." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344555.

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Reports on the topic "III-Nitride Materials"

1

Speck, James S. Development of III-Nitride Materials for IR Applications. Fort Belvoir, VA: Defense Technical Information Center, June 2008. http://dx.doi.org/10.21236/ada483731.

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Shul, R. J., A. J. Howard, S. P. Kilcoyne, S. J. Pearton, C. R. Abernathy, C. B. Vartuli, P. A. Barnes, and M. J. Bozack. High rate ECR etching of III-V nitride materials. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/81054.

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Abdellah, Bouguenna, Bouguenna Driss, and Boudghene Stambouli Amine. Performance analysis of III-nitride materials based biosensors for detection of albumin protein. Peeref, June 2023. http://dx.doi.org/10.54985/peeref.2306p3863264.

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Kurtz, Steven Ross, Terry W. Hargett, Darwin Keith Serkland, Karen Elizabeth Waldrip, Normand Arthur Modine, John Frederick Klem, Eric Daniel Jones, Michael Joseph Cich, Andrew Alan Allerman, and Gregory Merwin Peake. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/918384.

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Muth, John. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials. Fort Belvoir, VA: Defense Technical Information Center, August 2005. http://dx.doi.org/10.21236/ada523728.

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Yao, Huade W. Optical Properties of GaN and Other III-Nitride Semiconductor Materials Studied by Variable Angle Spectroscopic Ellipsometry. Fort Belvoir, VA: Defense Technical Information Center, December 2000. http://dx.doi.org/10.21236/ada391193.

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Davis, R. F., M. Harris, S. Halpern, S. Siebert, and M. Patel. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, April 2001. http://dx.doi.org/10.21236/ada389624.

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Davis, Robert F., and Kevin J. Linthicum. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, October 2000. http://dx.doi.org/10.21236/ada383629.

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Park, Gil Han, and Jin-Joo Song. (DURIP 99) MOCVD Growth With In-Situ Characterization and Femto-second Two-Color Laser Experiments for Widegap III-Nitride Materials and Device Development. Fort Belvoir, VA: Defense Technical Information Center, December 2001. http://dx.doi.org/10.21236/ada397733.

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