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Relevant bibliographies by topics / III-NITRIDE DEVICE

Academic literature on the topic 'III-NITRIDE DEVICE'

Author: Grafiati

Published: 11 September 2023

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Journal articles on the topic "III-NITRIDE DEVICE"

1

Jamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.

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Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

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Muthuraj, Vineeta R., Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller. "Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition." Applied Physics Letters 122, no. 14 (April 3, 2023): 142103. http://dx.doi.org/10.1063/5.0142941.

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The heterogeneous integration of III-nitride materials with other semiconductor systems for electronic devices is attractive because it combines the excellent electrical properties of the III-nitrides with other device platforms. Pursuing integration through metalorganic chemical vapor deposition (MOCVD) is desirable because of the scalability of the technique, but the high temperatures required for the MOCVD growth of III-nitrides (>1000 °C) are incompatible with direct heteroepitaxy on some semiconductor systems and fabricated wafers. Thus, the MOCVD growth temperature of III-nitride films must be lowered to combine them with other systems. In this work, 16 nm-thick Si:GaN films were grown by MOCVD at 550 °C using a flow modulation epitaxy scheme. By optimizing the disilane flow conditions, electron concentrations up to 5.9 × 1019 cm−3 were achieved, resulting in sheet resistances as low as 1070 Ω/□. Film mobilities ranged from 34 to 119 cm2 V−1 s−1. These results are promising for III-nitride integration and expand device design and process options for III-nitride-based electronic devices.

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Hangleiter, Andreas. "III–V Nitrides: A New Age for Optoelectronics." MRS Bulletin 28, no. 5 (May 2003): 350–53. http://dx.doi.org/10.1557/mrs2003.99.

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AbstractWith the advent of bright-blue light-emitting diodes in 1994, violet laser diodes in 1996, and vertical-cavity surface-emitting lasers at telecommunications wavelengths in 2000, all based on nitride-containing III–V compounds, a new age for optoelectronics began. Despite their technological success, III-nitride materials still hold some mysteries. Compared with conventional III–V semiconductors, even commercial nitride devices are of poor material quality. Due to their heteroepitaxial origin, their crystals are full of dislocations. Electrical properties, particularly in the case of p-type material, are fairly unsatisfactory. Still, light-emitting diodes with extremely high brightness and lasers with high power and good lifetime can be produced with III–V nitride compounds. In this review, we will give an overview of the essential properties of nitride materials for optoelectronic devices, their current development status, open questions, and recent device achievements.

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Baten, Md Zunaid, Shamiul Alam, Bejoy Sikder, and Ahmedullah Aziz. "III-Nitride Light-Emitting Devices." Photonics 8, no. 10 (October 7, 2021): 430. http://dx.doi.org/10.3390/photonics8100430.

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Fu, Wai Yuen, and Hoi Wai Choi. "Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes." Journal of Applied Physics 132, no. 6 (August 14, 2022): 060903. http://dx.doi.org/10.1063/5.0089750.

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Lift-off processes have been developed as the enabling technology to free the epitaxial III-nitride thin film from a conventional growth substrate such as sapphire and silicon in order to realize a variety of novel device designs and structures not otherwise possible. An epitaxial lift-off (ELO) process can be adopted to transfer the entire film to an arbitrary foreign substrate to achieve various functions, including enhancement of device performance, improvement of thermal management, and to enable flexibility among others. On the other hand, partial ELO techniques, whereby only a portion of the thin-film is detached from the substrate, can be employed to realize unconventional device structures or geometries, such as apertured, pivoted, and flexible devices, which may be exploited for various photonic structures or optical cavities. This paper reviews the development of different lift-off strategies and processes for III-nitride materials and devices, followed by a perspective on the future directions of this technology.

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6

Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (February 1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and plasma etching. Ion implantation is a technology whereby impurity atoms are introduced into the semiconductor with precise control of concentration and profile. It is widely used in mature semiconductor materials systems such as silicon or gallium arsenide for selective area doping or isolation. Plasma etching is employed to define device features in the semiconductor material with controlled profiles and etch depths. Plasma etching is particularly necessary in the III-nitride materials systems due to the lack of suitable wet-etch chemistries, as will be discussed later.Figure 1 shows a laser-diode structure (after Nakamura) where plasma etching is required to form the laser facets that ideally should be vertical with smooth surfaces. The first III-nitride-based laser diode was fabricated using reactive ion etching (RIE) to form the laser facets but suffered from rough mirror facet surfaces that contributed to scattering loss and a high lasing threshold. This is a prime example of how improved material quality alone will not yield optimum device performance.

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Fu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.

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Due to their large bandgap, high critical electric field, and availability of high-quality large-size melt-grown bulk substrates, III-oxides including Ga2O3, Al2O3, In2O3, and their alloys have been extensively investigated for a myriad of electronic and optoelectronic applications. Recently, β-Ga2O3 based power electronics, RF transistors, and ultraviolet (UV) photodetectors have been demonstrated with promising performance. However, p-type β-Ga2O3 is still elusive due to high dopant activation energy (>1 eV), large hole effective mass, and hole trapping. This significantly limits the design freedom for β-Ga2O3 devices. Other p-type semiconductors have been proposed to form heterostructures with β-Ga2O3 such as p-NiO, p-Cu2O, and p-type III-nitrides. As popular wide bandgap semiconductors, III-nitrides are promising candidates to form III-oxide/III-nitride heterostructures to enable advanced device structures and new functionalities. Furthermore, III-oxides and III-nitrides can be epitaxially grown on each other with small lattice mismatch (< 5% for GaN and β-Ga2O3) by the industrial standard epitaxial method MOCVD. For example, vertical GaN violet LEDs grown on n-type β-Ga2O3 substrates have been reported. This talk will present our recent work on III-oxide/III-nitride heterostructures in power electronics and optoelectronics. For power electronics, β-Ga2O3/GaN p-n heterojunctions will first be discussed. The heterojunction via mechanical exfoliation shows decent forward rectifying behaviors and thermal stability up to 200 °C but relatively low breakdown voltages (BV). To improve the breakdown capability, we carried out a comprehensive TCAD simulation study to design mesa edge termination for kV-class β-Ga2O3/GaN p-n heterojunctions. It was found that the electric field crowding effect is the main reason for the low BV. Several mesa edge termination structures were investigated such as deeply-etched mesa, step mesa, and p-GaN guard ring. Second, normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping will be discussed. A large two-dimensional electron gas is formed at the AlN/β-Ga2O3 interface due to polarization effects, and p-GaN gate is used to realize tunable positive threshold voltage. The device transfer and output characteristics with different device structures are also studied. For optoelectronics applications, self-powered spectrally distinctive Ga2O3/GaN heterojunction UV photodetectors grown by MOCVD will be discussed. Opposite current polarities are observed under different illumination wavelengths due to different carrier transports, which can be utilized to distinguish different spectra. These results indicate that (ultra)wide bandgap III-oxide/III-nitride heterostructures are a promising platform to enable new device structures and functionalities.

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Zhang, Shuai, Bingcheng Zhu, Zheng Shi, Jialei Yuan, Yuan Jiang, Xiangfei Shen, Wei Cai, Yongchao Yang, and Yongjin Wang. "Spatial signal correlation from an III-nitride synaptic device." Superlattices and Microstructures 110 (October 2017): 296–304. http://dx.doi.org/10.1016/j.spmi.2017.08.028.

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9

Gaevski, Mikhail, Jianyu Deng, Grigory Simin, and Remis Gaska. "500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000084–89. http://dx.doi.org/10.4071/hitec-tp16.

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High-temperature technology platform has been developed utilizing planar III-nitride heterostructures approach. The record high electron concentration and mobility in 2DEG channel of III-nitride devices result in very high operation speed and are remarkably stable within a broad temperature range, allowing device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality III-nitride heterostructure with very high carrier concentration and mobility that enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach that provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) robust design with self-compensating 2DEG load resistors, advance metallization and high-k passivation/gate dielectrics, specially developed for high temperature operation. The feasibility of technology was demonstrated by modeling, design and fabrication of inverter and differential amplifier type of ICs using III-nitride heterostructures. IC's performance was studied using probe station with heating chuck in ambient atmosphere. Temperature stability of structures with various barrier compositions was compared. At temperature exceeding 500 °C the developed ICs show the leakage currents below 10−7A, unit-gain bandwidth above 1 MHz and internal response time 45 ns.

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Islam, Md Sherajul, Md Arafat Hossain, Sakib Mohammed Muhtadi, and Ashraful G. Bhuiyan. "Transport Properties of Insulated Gate AlInN/InN Heterojunction Field Effect Transistor." Advanced Materials Research 403-408 (November 2011): 64–69. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.64.

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As a promising candidate for future high speed devices InN-based heterojunction field effect transistor (HFET) has gained a lot of attention in recent years. However, InN-based devices are still a less studied compared with other III-nitride based devices. This work investigates theoretically, the electron transport properties of insulated gate AlInN/InN Heterojunction Field Effect Transistor. A self-consistent charge control model based on one-dimensional Schrodinger-Poisson equations is developed. The transport properties of the device are calculated using an ensemble Monte Carlo simulation. The device model incorporates an analytical 3-valley band structure with non-parabolicity for all nitride materials. The scattering mechanisms considered are dislocations scattering, impurity scattering, interface roughness, alloy disorder scattering and phonon scattering. The model also takes into account the highly dominant spontaneous and piezoelectric polarization effects to predict the 2DEG sheet charge density more accurately at the heterointerface. The results obtained are agreed well with the literature.

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Dissertations / Theses on the topic "III-NITRIDE DEVICE"

1

Monika, Sadia K. "III- Nitride Enhancement Mode Device." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1483535296785214.

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Liu, Jie. "Channel engineering of III-nitride HEMTs for enhanced device performance /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20LIUJ.

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Eiting, Christopher James. "Growth of III-V nitride materials by MOCVD for device applications /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Feng, Zhihong. "Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20FENG.

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Nath, Digbijoy N. "Advanced polarization engineering of III-nitride heterostructures towards high-speed device applications." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1376927078.

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Nguyen, Hieu. "Molecular beam epitaxial growth, characterization and device applications of III-Nitride nanowire heterostructures." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=107905.

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Recently, group III-nitride nanowire heterostructures have been extensively investigated. Due to the effective lateral stress relaxation, such nanoscale heterostructures can be epitaxially grown on silicon or other foreign substrates and can exhibit drastically reduced dislocations and polarization fields, compared to their planar counterparts. This dissertation reports on the achievement of a new class of III-nitride nanoscale heterostructures, including InGaN/GaN dot-in-a-wires and nearly defect-free InN nanowires on a silicon platform. We have further developed a new generation of nanowire devices, including ultrahigh-efficiency full-color light emitting diodes (LEDs) and solar cells on a silicon platform.We have identified two major mechanisms, including poor hole transport and electron overflow, that severely limit the performance of GaN-based nanowire LEDs. With the incorporation of the special techniques of p-type modulation doping and AlGaN electron blocking layer in the dot-in-a-wire LED active region, we have demonstrated phosphor-free white-light LEDs that can exhibit, for the first time, internal quantum efficiency of > 50%, negligible efficiency droop up to ~ 2,000A/cm2, and extremely high stable emission characteristics at room temperature, which are ideally suited for future smart lighting and full-color display applications.We have also studied the epitaxial growth, fabrication and characterization of InN:Mg/i-InN/InN:Si nanowire axial structures on n-type Si(111) substrates and demonstrated the first InN nanowire solar cells. Under one-sun (AM 1.5G) illumination, the devices exhibit a short-circuit current density of ~ 14.4 mA/cm2, open circuit voltage of 0.14 V , fill factor of 34.0%, and energy conversion efficiency of 0.68%. This work opens up exciting possibilities for InGaN nanowire-based, full solar-spectrum third-generation solar cells.
Récemment, les hétérostructures à base de nitride et de groupe III ont fait l'objet de recherches intensives. Grâce à la relaxation latérale effective du stress, de telles hétérostructures d'échelle nanométrique peuvent être déposés sur du Silicium ou d'autres substrats. Celles-ci démontrent une réduction dramatique des dislocations et des champs de polarisations comparativement à leurs contreparties planes. Cette dissertation rapporte l'accomplissement d'une nouvelle classe de matériau nanométrique, soit des hétérostructures III-nitride incluant InGaN/GaN point dans fils ainsi que des nanofils d'InN presque sans défauts sur du Silicium. De plus, nous avons développé une nouvelle génération de dispositifs à base de nanofils, incluant des diodes émettrices de lumière (LEDs) à efficacité ultra haute et spectre visible complet ainsi que des cellules solaires sur une gaufre de Silicium. Nous avons identifié 2 mécanismes majeurs, incluant le faible transport des trous et le surplus d'électrons, qui limitent sérieusement la performance des LEDs à base de nanofils de GaN. Avec l'ajout de certaines techniques spéciales de modulation de type p, et une couche bloquante d'électrons faite de AlGaN dans la région active de la LED point dans fil. Par ailleurs, nous avons démontré des LEDs blanche sans phosphore qui démontrent, pour la première fois, une efficacité quantique supérieure à 50% ainsi qu'une baisse d'efficacité négligeable jusqu'à ~ 2,000A/cm2 et des caractéristiques d'émissions très hautes et stables à température pièce. Celles-ci sont donc toutes désignées pour des applications d'illumination intelligentes et des écrans pleines couleurs. La croissance par épitaxie, la fabrication et la caractérisation des nanofils d'InN:Mg/i-InN/InN:Si axiaux sur des substrats de Si(111) de type n et démontré la première cellule solaire à base d'InN. Sous l'illumination d'un soleil (AM 1.5G), les dispositifs démontrent une densité de courant de ~ 14.4 mA/cm2 en court-circuit, un voltage de circuit ouvert de 0.14V, un facteur de remplissage de 34.0% et une efficacité de conversion d'énergie de 0.68%. Ce travail ouvre des portes excitantes pour des cellules solaires plein spectre de troisième génération à base de nanofils d'InGaN.

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Miller, Eric Justin. "Influence of material properties on device design and performance in III-V nitride alloys /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3091322.

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Jackson, Christine M. "Correlations of Electronic Interface States and Interface Chemistry on Dielectric/III Nitride Heterostructures for Device Applications." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu15257361319909.

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Growden, Tyler A. "III-V Tunneling Based Quantum Devices for High Frequency Applications." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469199253.

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Namkoong, Gon. "Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/16426.

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Books on the topic "III-NITRIDE DEVICE"

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Chuan, Feng Zhe, ed. III-nitride devices and nanoengineering. London: Imperial College Press, 2008.

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T, Yu E., and Manasreh Mahmoud Omar, eds. III-V nitride semiconductors: Applications & devices. New York: Taylor & Francis, 2003.

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Seong, Tae-Yeon. III-Nitride Based Light Emitting Diodes and Applications. Dordrecht: Springer Netherlands, 2013.

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Morkoç, Hadis. Gallium nitride materials and devices III: 21-24 January 2008, San Jose, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2008.

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Kurt, Gaskill D., Brandt Charles D, Nemanich R. J, and Materials Research Society Meeting, eds. III-Nitride, SiC, and diamond materials for electronic devices: Symposium held April, 1996, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1996.

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Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices (2001 Washington, D.C.). III-nitride based semiconductor electronics and optical devices: And, thirty-fourth state-of-the-art-program on compound semiconductors (SOTAPOCS XXXIV) : proceedings of the international symposia. Edited by Ren F, Electrochemical Society Meeting, and State-of-the-Art Program on Compound Semiconductors (34th : 2001 : Washington, D.C.). Pennington, NJ: Electrochemical society, 2001.

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III-Nitride Electronic Devices. Elsevier, 2019. http://dx.doi.org/10.1016/s0080-8784(19)x0004-6.

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Feng, Zhe Chuan. III-Nitride Materials Devices. World Scientific Publishing Co Pte Ltd, 2017.

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Chu, Rongming, and Keisuke Shinohara. III-Nitride Electronic Devices. Elsevier Science & Technology Books, 2019.

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Chu, Rongming, and Keisuke Shinohara. III-Nitride Electronic Devices. Elsevier Science & Technology, 2019.

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Book chapters on the topic "III-NITRIDE DEVICE"

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Zhou, Shengjun, and Sheng Liu. "Device Reliability and Measurement." In III-Nitride LEDs, 217–39. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0436-3_6.

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Fan, Shizhao, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi. "Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications." In Handbook of GaN Semiconductor Materials and Devices, 243–83. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-7.

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Mukherjee, Moumita, and D. N. Bose. "Large-Signal Analysis of III-V Nitride Based DD-Transit Time Device: A New Source for THz Power Generation." In Physics of Semiconductor Devices, 107–11. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_26.

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Mukherjee, Moumita. "Large Signal Physical Operation of a III–V Nitride Based Double Velocity Transit Time Device: A Potential Source For THz Imaging." In Physics of Semiconductor Devices, 225–28. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_56.

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Maiti, Chinmay K. "III-Nitride Flexible Electronic Devices." In Fabless Semiconductor Manufacturing, 211–47. New York: Jenny Stanford Publishing, 2022. http://dx.doi.org/10.1201/9781003314974-6.

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Bisi, Davide, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni. "Reliability in III-Nitride Devices." In Handbook of GaN Semiconductor Materials and Devices, 367–430. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-12.

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Binari, Steven C., and Harry B. Dietrich. "III-V Nitride Electronic Devices." In GaN and Related Materials, 509–34. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-16.

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Shen, Bo, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, et al. "III-Nitride Materials and Characterization." In Handbook of GaN Semiconductor Materials and Devices, 3–52. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-1.

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Lin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung (Henry) Kuo, Wei-Chih Lai, and Jinn-Kong Sheu. "III–V Nitride-Based Photodetection." In Handbook of GaN Semiconductor Materials and Devices, 597–613. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-19.

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Lin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung Kuo, Wei-Chih Lai, and Jinn-Kong Sheu. "III–V Nitride-Based Photodetection." In Handbook of GaN Semiconductor Materials and Devices, 597–613. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-25.

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Conference papers on the topic "III-NITRIDE DEVICE"

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Toledo, Nikholas G., Samantha C. Cruz, Carl J. Neufeld, Jordan R. Lang, Michael A. Scarpulla, Trevor Buehl, Arthur C. Gossard, Steven P. Denbaars, James S. Speck, and Umesh K. Mishra. "Integrated non-III-nitride/III-nitride tandem solar cell." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994525.

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Feezell, Daniel, Arman Rashidi, Morteza Monavarian, Andrew Aragon, Mohsen Nami, Saadat Mishkat-Ul-Masabih, and Ashwin Rishinaramangalam. "III-Nitride High-Speed Optoelectronics." In 2019 Device Research Conference (DRC). IEEE, 2019. http://dx.doi.org/10.1109/drc46940.2019.9046403.

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Ruden, P. P. "Materials-theory-based device modeling for III-nitride devices." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344555.

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Simin, G., Z.-j. Yang, A. Koudymov, V. Adivarahan, J. Yang, and M. Khan. "III-Nitride Field-Effect Transistors with Capacitively-Coupled Contacts." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305139.

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Shahedipour-Sandvik, F., M. Tungare, J. Leathersich, P. Suvarna, R. Tompkins, and K. A. Jones. "III-Nitride devices on Si: Challenges and opportunities." In 2011 International Semiconductor Device Research Symposium (ISDRS 2011). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135260.

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Nikishin, Sergey, and Mark Holtz. "Growth of III-Nitride quantum structures for device applications." In 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO). IEEE, 2010. http://dx.doi.org/10.1109/nano.2010.5698066.

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Wang, Ping, Ding Wang, Shubham Mondal, and Zetian Mi. "Fully Epitaxial Ferroelectric III-Nitride Semiconductors: From Materials to Devices." In 2022 Device Research Conference (DRC). IEEE, 2022. http://dx.doi.org/10.1109/drc55272.2022.9855651.

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Yang, Z., A. Kudymov, X. Hu, J. Yang, G. Simin, M. Shur, and R. Gaska. "Sub-0.1 dB loss III-Nitride MOSHFET RF Switches." In 2008 66th Annual Device Research Conference (DRC). IEEE, 2008. http://dx.doi.org/10.1109/drc.2008.4800845.

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Hung, Ting-Hsiang, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Sanyam Bajaj, and Siddharth Rajan. "Lateral energy band engineering of Al2O3/III-nitride interfaces." In 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872332.

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Yang, Z. C., D. N. Nath, Y. Zhang, and S. Rajan. "N-polar III-nitride tunneling hot electron transfer amplifier." In 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872353.

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Reports on the topic "III-NITRIDE DEVICE"

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Kurtz, Steven Ross, Terry W. Hargett, Darwin Keith Serkland, Karen Elizabeth Waldrip, Normand Arthur Modine, John Frederick Klem, Eric Daniel Jones, Michael Joseph Cich, Andrew Alan Allerman, and Gregory Merwin Peake. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/918384.

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Davis, R. F., M. Harris, S. Halpern, S. Siebert, and M. Patel. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, April 2001. http://dx.doi.org/10.21236/ada389624.

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Davis, Robert F., and Kevin J. Linthicum. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, October 2000. http://dx.doi.org/10.21236/ada383629.

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Park, Gil Han, and Jin-Joo Song. (DURIP 99) MOCVD Growth With In-Situ Characterization and Femto-second Two-Color Laser Experiments for Widegap III-Nitride Materials and Device Development. Fort Belvoir, VA: Defense Technical Information Center, December 2001. http://dx.doi.org/10.21236/ada397733.

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McCartney, Martha R., and David J. Smith. Failure Mechanisms for III-Nitride HEMT Devices. Fort Belvoir, VA: Defense Technical Information Center, November 2013. http://dx.doi.org/10.21236/ada601810.

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Jiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, March 2002. http://dx.doi.org/10.21236/ada399578.

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Jiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, August 2001. http://dx.doi.org/10.21236/ada390015.

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Jiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada390174.

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Stroscio, Michael A., and Mitra Dutta. III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance. Fort Belvoir, VA: Defense Technical Information Center, January 2009. http://dx.doi.org/10.21236/ada495368.

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