Journal articles: 'IGBT power modules'

1

Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.

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Although IGBT modules are widely used as power semiconductor switch in many high power applications, there are still reliability problems related to the current unbalance between paralleled IGBTs that may destroy the whole module and, eventually, the power system. Indeed, short-circuit and overvoltage events can also destroy some of the IGBTs of the power module. In this sense, the instantaneous monitoring of the anode current and voltage values and the use of a more intelligent gate driver able to work with the signals of each particular IGBT of the module would enhance its operating lifetime. In this sense, the paper describes the design, optimization, fabrication and basic performances of 3.3kV-50A punch-through IGBTs for traction and tap changer applications where anode current and voltage sensors are monolithically integrated within the IGBT core.

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Fu, Xiao Jin, Chun Lan Que, Shuai Zhang, En Xing Yang, and Hang Ye. "The Design of Parallel IGBT Modular for Modularized Wind Power Converter." Applied Mechanics and Materials 734 (February 2015): 873–76. http://dx.doi.org/10.4028/www.scientific.net/amm.734.873.

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Aiming at meeting the requirement of modularization for megawatt wind power converter, the paralleling structure of IGBT modules was designed. Fast transient response and current sharing capabilities of the paralleled IGBT modules were regarded as the main research object, the drive circuit and adapter plate was also designed. utilizing the new type of protection circuit on the adapter plate to ensure reliability of the paralleled IGBT modules. As one of the most promising technologies, Digital drive technology was applied as the conception of the driver, and the core of the driver is FPGA and A/D sampling circuit. Using digital driver had the advantages of good consistency pulse parameters, flexible software programming and high anti-jamming ability. The current equalization among the IGBT modules was verified by means of the field test. Based on the experiment, the characteristics of balancing parallel IGBTs' currents were better than previous designs. It is concluded that the whole design of the system was reasonable and can meet the demands of the engineering applications.<b></b>

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Li, Cui, Yao Sheng Li, Jun Xu Liu, Hua Qiang Shao, Zhong yuan Chen, and Jin Yuan Li. "Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test." Journal of Physics: Conference Series 2290, no. 1 (June 1, 2022): 012041. http://dx.doi.org/10.1088/1742-6596/2290/1/012041.

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Abstract In Power cycling test, for low-voltage and low-power modules, it is generally considered that the saturation voltage drop VCE(sat) reaches 105% of the initial value or the thermal resistance Rth reaches 120% of the initial value as the basis for judging the failure of the IGBT module. However, since the high-voltage and high-power IGBT modules are connected in parallel with multiple chips, there are differences in the aging speed of the chips, and the degradation of individual chips has little influence on the parameters of the entire module, so the failure judgment standard may not be applicable. In order to obtain the degradation of the characteristic parameters of the high-voltage and high-power IGBT module in the power cycle test, this paper selects the 6500V/600A IGBT module as the research object, adopts the experimental method of constant junction temperature fluctuation, and tests the module parameters after every cycle 20,000 times until the module fails. Three failure modes were found through the test: GE failure, CE failure, GE and CE failure. And the degradation law of the parameters of the high-voltage and high-power IGBT module during the power cycling test was obtained.

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Wang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones, and Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems." Advanced Materials Research 846-847 (November 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.

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In this work, the methodology and procedures of lifetime prediction for power IGBT modules are presented. Firstly, we discuss the long term reliability tests of power modules for developing lifetime models, and review some reported lifetime models. Then, the procedures of lifetime prediction in real applications are addressed, which include power loss calculations based on the actual mission profile, the conversion of power loss profile to temperature profile according to the module's thermal properties, the temperature cycles counting by Rainflow algorithm, and lifetime calculation by the fatigue linear accumulation damage theory. Finally, the lifetime of a 3300V/800A IGBT module manufactured by Dynex Semiconductor of China Southern Railway applied in metro traction systems is predicted.

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Levchuk, Svetlana, Monika Poebl, and Gerhard Mitic. "Diamond Composites for Power Electronics Application." Advanced Materials Research 59 (December 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.

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In view of power electronics applications, baseplates made from metal diamond composites have been manufactured and characterised. The surface contours of the baseplates were measured during thermal loads up to 180°C starting at room temperature with help of the TherMoiré technique. X-ray analysis investigation was performed to detect porosity and local inhomogeneities of the baseplates. Al- and Cu-based diamond composite baseplates were Ni-plated and used for manufacturing of 3.3 kV IGBT modules. The solder layer between AlN AMB (active metal brazing) substrates and baseplates was investigated by ultrasonic and X-Ray analyses. Thermal resistance of the manufactured IGBT modules was characterised and compared to that of IGBT modules with AlSiC or Cu baseplates. The influence of thermal cycling on the solder layer and thermal resistance of the manufactured module was investigated.

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Zheng, Qing Yuan, Min You Chen, Bing Gao, and Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model." Advanced Materials Research 986-987 (July 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.

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Reliability of IGBT power module is one of the biggest concerns regarding wind power system, which generates the non-uniform distribution of temperature and thermal stress. The effects of non-uniform distribution will cause failure of IGBT module. Therefore, analysis of thermal mechanical stress distribution is crucially important for investigation of IGBT failure mechanism. This paper uses FEM method to establish an electrical-thermal mechanical coupling model of IGBT power module. Firstly, thermal stress distribution of solder layer is studied under power cycling. Then, the effects of initial failure of solder layer on the characteristic of IGBT module is investigated. Experimental results indicate that the strain energy density and inelastic strain are higher which will reduce reliability and lifetime of power modules.

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Wu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.

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As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.

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Shen, Bing, and Yifa Sheng. "Research on junction temperature monitoring technology of IGBT modules." Journal of Physics: Conference Series 2378, no. 1 (December 1, 2022): 012043. http://dx.doi.org/10.1088/1742-6596/2378/1/012043.

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Abstract Modular Multilevel Converter (MMC) is widely used in flexible HVDC transmission systems, IGBT module as its core power device, its failure process seriously affects the operation reliability of MMC. The high junction temperature is an important reason for the failure of the IGBT module, so monitoring the junction temperature of IGBT module is an important means to ensure the stable operation of the system. According to the topological structure of IGBT module, the current junction temperature monitoring methods of IGBT module are summarized and compared. According to the shortcomings of the current research and the current research status, the research direction of IGBT module junction temperature monitoring is prospected.

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Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

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10

Jo, Kim, Cho, and Lee. "Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules." Electronics 8, no. 10 (October 7, 2019): 1127. http://dx.doi.org/10.3390/electronics8101127.

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This paper presents the development of a hardware simulator based on the junction-temperature of insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs). The MMC consists of various power-electronics components, and the IGBT is the main factor determining the lifetime of the MMC. The failure of IGBTs is mostly due to the junction-temperature swing; thus, the thermal profile of the IGBT should be established to predict the lifetime. The thermal behavior depends on the current flowing to the IGBT, and the load-current profile is related to the application. To establish the thermal profile of the IGBT, the proposed hardware simulator generates various shapes of output currents while the junction temperature is measured. Additionally, a controller design is presented for simulation of the arm current, which includes a direct current component as well as an alternative current component with a fundamental frequency. The validity and performance of the proposed hardware simulator and its control methods are analyzed according to various experimental results.

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11

Wang, Lei, Mingchao Zhou, Zhonghao Dongye, Yanbei Sha, and Jingcao Chen. "A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation." Sensors 23, no. 5 (February 24, 2023): 2537. http://dx.doi.org/10.3390/s23052537.

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In the actual operation of urban rail vehicles, it is essential to evaluate the condition of the traction converter IGBT modules. Considering the fixed line and the similarity of operation conditions between adjacent stations, this paper proposes an efficient and accurate simplified simulation method to evaluate IGBT conditions based on operating interval segmentation (OIS). Firstly, this paper proposes the framework for a condition evaluation method by segmenting operating intervals based on the similarity of average power loss between neighboring stations. The framework makes it possible to reduce the number of simulations to shorten the simulation time while ensuring the state trend estimation accuracy. Secondly, this paper proposes a basic interval segmentation model that uses the operating conditions as inputs to implement the segmentation of the line and is able to simplify the operation conditions of entire line. Finally, the simulation and analysis of the temperature and stress fields of IGBT modules based on segmented intervals completes the IGBT module condition evaluation and realizes the combination of lifetime calculation with actual operating conditions and internal stresses. The validity of the method is verified by comparing the interval segmentation simulation with actual test results. The results show that the method can effectively characterize the temperature and stress trends of traction converter IGBT modules in the whole line, which could support the fatigue mechanism and lifetime assessment reliability study of IGBT modules.

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12

Cova, P., M. Ciappa, G. Franceschini, P. Malberti, and F. Fantini. "Thermal characterization of IGBT power modules." Microelectronics Reliability 37, no. 10-11 (October 1997): 1731–34. http://dx.doi.org/10.1016/s0026-2714(97)00150-9.

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13

Wang, Chenyuan, Yigang He, Chuankun Wang, Lie Li, and Xiaoxin Wu. "Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration." Electronics 9, no. 10 (September 23, 2020): 1559. http://dx.doi.org/10.3390/electronics9101559.

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The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.

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Fu, Shancan, Guoliang Wang, and Feng Xiao. "Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology." Journal of Physics: Conference Series 2370, no. 1 (November 1, 2022): 012012. http://dx.doi.org/10.1088/1742-6596/2370/1/012012.

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This paper presents a degradation behavior of high-power semiconductor modules, i.e., IGBT, with sintered silver by power cycle test and thermal cycle test. The electrical characteristics, such as on-state voltage drop, thermal resistance and leakage current, were studied. For power cycle test, the IGBT module still has an acceptable electrical performance after the 30 K power cycles. No noticeable changes can be found in the die-attach layer, while the DBC-attach layer begins to fail after 30 K power cycles. For the thermal cycling test, the electrical characteristics of the IGBT module were only tested within the first 300 cycles because the Al2O3 DBC substrate failed first before the failure of the bonding layers. Finally, finite element methods (FEM) were used to analyze thermal and mechanical stress distribution and failure mechanism of the bonding layers.

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Sharma, Yogesh, P. Mumby-Croft, L. Ngwendson, M. Packwood, L. Coulbeck, M. Birkett, C. Kong, H. Jiang, Y. Wang, and I. Deviny. "6.5 kV Si/SiC Hybrid Power Module Technology." Materials Science Forum 963 (July 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.

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Substituting Si diodes with SiC Schottky diodes in Si insulated gate bipolar transistor (IGBT) modules is beneficial, as it can reduce power losses in electrical systems significantly. The fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present is not possible because of the Si diodes. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. Comparisons of the 6.5 kV Si and hybrid SiC at room temperature and high temperature have shown that the switching losses in hybrid SiC substrates are low as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the output waveforms.

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Abdalgader, Ibrahim A. S., Sinan Kivrak, and Tolga Özer. "Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications." Micromachines 13, no. 2 (February 17, 2022): 313. http://dx.doi.org/10.3390/mi13020313.

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The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient, oversized, and have trouble achieving pure sine wave voltages requirements. The efficiency of the aircraft ground power units (AGPU) can be increased by replacing existing Si-IGBT transistors with silicon carbide (SiC) IGBTs because of the physical constraints of Si-IGBT switches. The primary purpose of this research was to prove that the efficiency increase could be obtained in the case of using SiC-IGBTs in conventional AGPU systems with the realized experimental studies. In this study, three different experimental systems were discussed for this purpose. The first system was the traditional APGU system. The other two systems were single-phase test (SPT) and three-phase inverter systems, respectively. The SPT system and three-phase inverter systems were designed and implemented to compare and make analyses of Si-IGBTs and SiC-IGBTs performance. The efficiency and detailed hard switching behavior comparison were performed between the 1200-V SiC-IGBT- and 1200-V Si-IGBT-based experimental systems. The APGU system and Si-IGBT modules were examined, the switching characteristic and efficiency of the system were obtained in the first experimental study. The second experimental study was carried out on the SPT system. The single-pulse test system was created using Si-IGBTs and SiC-IGBTs switches in the second experimental system. The third experiment included a three-phase-inverter-based test system. The system was created with Si-IGBTs and SiC-IGBTs to compare the two different switch-based inverters under RL loads. The turning off and turning on processes of the IGBT switches were examined and the results were presented. The Si-IGBT efficiency was 77% experimentally in the SPT experimental system. The efficiency of the third experimental system was increased up to 95% by replacing the old Si transistor with a SiC. The efficiency of the three-phase Si-IGBT-based system was 86% for the six-switch case. The efficiencies of the SiC-IGBT-based system were increased to around 92% in the three-phase inverter system experimentally. The findings of the experimental results demonstrated that the SiC-IGBT had a faster switching speed and a smaller loss than the classical Si-IGBT. As a result of the experimental studies, the efficiency increase that could be obtained in the case of using SiC-IGBTs in conventional AGPU systems was revealed.

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Li, Bin, Ke Qing Xiong, Yi Sun, and Bing Qi. "Safety P-Cycle Protection Mechanism for Smart Power Device." Advanced Materials Research 804 (September 2013): 228–32. http://dx.doi.org/10.4028/www.scientific.net/amr.804.228.

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Power converter with full closed loop water cooling system, works not only use water cooling characteristics of high efficiency, but also the electricity, and reducing the volume to prevent contamination. In this paper, we proposed a novel p-cycle safety protection approach that can provide rapid cycling radiating, and can restore the status of power device. For power cabinet composition, IGBT power modules and reactors is primarary radiating components, in which IGBT power modules that used for water cooling solution is modeled as the cooled automobile engine cooling system using cycling design principle. Besides, machine side and the network side of the power module is installed in separate cabinet to improve the tightness of the entire cabinet, in order to resist sandstorms.

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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

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Liu, Xingliang, Guiyun Tian, Yu Chen, Haoze Luo, Jian Zhang, and Wuhua Li. "Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach." Energies 13, no. 10 (May 21, 2020): 2613. http://dx.doi.org/10.3390/en13102613.

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In this paper, a non-contact degradation evaluation method for insulated gate bipolar transistor (IGBT) modules is proposed based on eddy current pulsed thermography approach. In non-contact heat excitation procedures, a high-power induction heater is introduced to generate heat excitation in IGBT modules. The thermographs of the whole temperature mapping are recorded non-invasively by an IR camera. As a result, the joint degradation of IGBT modules can be evaluated by the transient thermal response curves derived from the recorded thermographs. Firstly, the non-destructive evaluation principle of the eddy current pulsed thermography (ECPT) system for an IGBT module with a heat sink is introduced. A 3D simulation module is built with physical parameters in ANSYS simulations, and then thermal propagation behavior considering the degradation impact is investigated. An experimental ECPT system is set up to verify the effectiveness of the proposed method. The experimental results show that the delay time to peak temperature can be extracted and treated as an effective indicative feature of joint degradation.

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Park, C., M. J. Mauger, T. Damle, J. Huh, S. Steinhoff, and L. Graber. "Cryogenic Power Electronics: Press-Pack IGBT Modules." IOP Conference Series: Materials Science and Engineering 756 (June 30, 2020): 012009. http://dx.doi.org/10.1088/1757-899x/756/1/012009.

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Boettcher, Lars, S. Karaszkiewicz, D. Manessis, and A. Ostmann. "Development of Embedded High Power Electronics Modules for Automotive Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 001717–43. http://dx.doi.org/10.4071/2013dpc-wp35.

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The automotive industry has a strong demand for highly reliable and cost-efficient electronics. Especially the upcoming generations of hybrid cars and fully electrical vehicles need compact and efficient 400 V power modules. Within the engine compartment installation space is of major concern. Therefore small size and high integration level of the modules are needed. Conventionally IGBTs and diodes are soldered to DCB (Direct Copper Bond) ceramics substrates and their top contacts are connected by heavy Al wire bonds. These ceramic modules are vacuum soldered to water-cooled base plates. Embedding of power switches, and controller into compact modules using PCB (Printed Circuit Board) technologies offers the potential to further improve the thermal management by double-sided cooling and to reduce the thickness of the module. In the recently started “HI-LEVEL” (Integration of Power Electronics in in High Current PCBs for Electric Vehicle Application) project, partners from automotive, automotive supplier, material supplier, PCB manufacturer and research teamed up to develop the technology, components and materials to realize high power modules. The following topics of the development will be addressed in detail in this paper:Assemble of power dies (IGBT and diode) using new sinter die attach materials:The deployment of new no pressure, low temperature sinter paste for the assembly of the power dies is a mayor development goal. Here the development of a reliable process to realize a defect free bonding of large IGBT dies (up to 10x14mm2) is essentially. These pastes are applied by stencil printing or dispensing and the sintering will take place after die placement at temperatures of around 200 °C.Thick copper substrate technology:To handle the high switching current, suitable copper tracks in the PCB are required. The realization of such thick copper lines (up to 1mm thickness) requires advanced processing, compared to conventional multilayer PCB production. In this paper the essential development steps towards a 10 kW inverter module with embedded components will be described. The process steps and reliability investigations of the different interconnect levels will be described in detail.

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Imaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.

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Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.

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Morozumi, A., K. Yamada, T. Miyasaka, S. Sumi, and Y. Seki. "Reliability of power cycling for igbt power semiconductor modules." IEEE Transactions on Industry Applications 39, no. 3 (May 2003): 665–71. http://dx.doi.org/10.1109/tia.2003.810661.

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Melnikov, V., O. Talipov, and Yu Kibartene. "EVALUATING THE POSSIBILITY OF APPLYING CONTROLLED COMPENSATION SYSTEMS TO IMPROVE EFFICIENCY IN ELECTRIC GRIDS." Bulletin of Toraighyrov University. Energetics series, no. 2021.3 (September 11, 2021): 83–92. http://dx.doi.org/10.48081/jbmz50037.

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The paper considers issues of increasing efficiency of multilevel power converter based on IGCT and IGBT modules to improve energy performance by compensating reactive power in electric networks. By the example of a local power grid using SEMIS SimulationTool design tool the results of calculations of variants of multilevel converters with IGCT and IGBT are presented. The study of possibilities to increase the efficiency of multilevel power converters (MPE) for reactive power compensation (RPC) in local electrical networks (LES) on the basis of plenipotentiary controlled semiconductor cells is of particular interest, because the efficiency of network operation is insufficient, especially in changing load modes with large electric power losses (PEM). And from these positions, one of the most effective tools are fast controlled (PFC) systems. For this purpose, research has been carried out to obtain the best results. Used in calculations tool and methodology are certified software products and algorithms of ABB-SEMIS Simulation Tool computer design.

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Zhang, Jingxuan, Hexu Sun, Zexian Sun, Yan Dong, and Weichao Dong. "Open-Circuit Fault Diagnosis of Wind Power Converter Using Variational Mode Decomposition, Trend Feature Analysis and Deep Belief Network." Applied Sciences 10, no. 6 (March 21, 2020): 2146. http://dx.doi.org/10.3390/app10062146.

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The power converter is a significant device in a wind power system. The wind turbine will be shut down and off grid immediately with the occurrence of the insulated gate bipolar transistor (IGBT) module open-circuit fault of the power converter, which will seriously impact the stability of grid and even threaten personal safety. However, in the existing diagnosis strategies for the power converter there are few single and double IGBT module open-circuit fault diagnosis methods producing negative results, including erroneous judgment, omissive judgment and low accuracy. In this paper, a novel method to diagnose the single and double IGBT modules open-circuit faults of the permanent magnet synchronous generator (PMSG) wind turbine grid-side converter (GSC) is proposed: Primarily, by collecting the three-phase current varying with a wind speed of 22 states, including a normal state and 21 failure states of PMSG wind turbine GSC as the original signal data. Afterward, the original signal data are decomposed by using variational mode decomposition (VMD) to obtain the mode coefficient series, which are analyzed by the proposed method base on fault trend feature for extracting the trend feature vectors. Finally, the trend feature vectors are utilized as the input of the deep belief network (DBN) for decision-making and obtaining the classification results. The simulation and experimental results show that the proposed method can diagnose the single and double IGBT modules open-circuit faults of GSC, and the accuracy is higher than the benchmark models.

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Agunov, A. V., A. T. Burkov, V. G. Zhemchugov, and K. K. Stepanova. "Energy efficiency of power electronics converters in traction power supply networks at voltage increase." Journal of Physics: Conference Series 2131, no. 4 (December 1, 2021): 042094. http://dx.doi.org/10.1088/1742-6596/2131/4/042094.

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Abstract The main features of the procedure for predicting electrical losses in power semiconductor converters of AC-DC and DC-AC systems of high voltage DC traction are presented. The procedure is based on simulation of multi-cycle switching of IGBT modules in combination with simulation of static and dynamic switching losses in traction converter circuits. The models take into account the switching frequency, physical processes in the formation of voltage and current diagrams at transition processes and in the static state of the switch elements. The model of loss assessment using particular types of IGBT modules is the basis for calculating the energy efficiency characteristics of traction converters for advanced high-voltage direct current traction systems.

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Abbate, Carmine, and Roberto Di Folco. "High Frequency Behavior of High Power IGBT Modules." Universal Journal of Electrical and Electronic Engineering 3, no. 1 (January 2015): 17–23. http://dx.doi.org/10.13189/ujeee.2015.030104.

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Azar, R., F. Udrea, M. DeSilva, G. Amaratunga, W. T. Ng, F. Dawson, W. Findlay, and P. Waind. "Advanced SPICE Modeling of Large Power IGBT Modules." IEEE Transactions on Industry Applications 40, no. 3 (May 2004): 710–16. http://dx.doi.org/10.1109/tia.2004.827456.

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Luo, Dan, Minyou Chen, Wei Lai, Hongjian Xia, Zhenyu Deng, Zhi Wang, and Kai Yu. "A Fault Detection Method of IGBT Bond Wire Fatigue Based on the Reduction of Measured Heatsink Thermal Resistance." Electronics 11, no. 7 (March 24, 2022): 1021. http://dx.doi.org/10.3390/electronics11071021.

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Bond wire lift-off is one of the major failure mechanisms in the insulated gate bipolar transistor (IGBT) modules. Detecting the fault of bond wires is important to avoid the open-circuit fault of IGBT to ensure the reliable operation of power converters. In this paper, we propose a novel bond wire fatigue detection method for IGBT, which could be used in normal working conditions. Firstly, we investigated the dependence of bond wire fatigue on heatsink thermal resistance. An aging rate K was proposed to compare the measured thermal resistance with the initial value, which could indicate the bond wire fatigue. Then, this proposed method was verified by simulation and experimental results under different current levels. Finally, a power cycling test was used to show the aging process of the IGBT module, which shows the feasibility of proposed method.

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30

Krainyukov, Alexander, and Valery Kutev. "Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation." Transport and Telecommunication Journal 16, no. 3 (September 1, 2015): 217–23. http://dx.doi.org/10.1515/ttj-2015-0020.

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Abstract The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.

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31

Chen, Ming, An Hu, Yong Tang, and Bo Wang. "SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Devices." Advanced Materials Research 291-294 (July 2011): 1704–8. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.1704.

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Power electronic modules including insulated gate bipolar transistor (IGBT) are widely used in the field of power converter application. The temperature distribution inside these modules becomes more important for electrical characteristics, reliability and lifetime of integrated power electronic modules. In this paper, a seven-layer compact RC thermal component network model based on the physical structure is presented. A dynamic electro-thermal model, which is composed of electrical model, compact RC thermal component network model and electro-thermal interface is developed for the IGBT. These models interact with each other to calculate the temperature of each layer of module and parameters of each model. The thermal model determines the evolution of the temperature distribution within the thermal network and thus determines the instantaneous junction temperature used by the electrical model. Such built dynamic electro-thermal simulation methodology is implemented in the Saber circuit simulator, and the simulation result is validated by the experimental study, which adopted with infrared thermal imaging camera. The built dynamic electro-thermal model could be helpful for the research on operation performance and heat sink design for such power electronic devices.

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32

Luo, Bing Yang, Yi Min Mo, Wen Lu Zhang, and Si Ning Liu. "Study Temperature and Humidity Influence on High-Power IGBT." Applied Mechanics and Materials 325-326 (June 2013): 499–502. http://dx.doi.org/10.4028/www.scientific.net/amm.325-326.499.

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This paper has made a statistic survey on the failure rate of the appliance of high-power IGBT on the Harmonious locomotive. According to the analysis ,environmental temperature and humidity have a crucial influence on failure rate, thus a set of temperature and humidity monitoring system has been designed to investigate the environment temperature and humidity of high failure rate Four-quadrant IGBT modules, analyzing factors such as temperature and humidity and the working conditions accordingly, exploring the relationship of rising temperature of IGBT ,locomotive speed ,pressure of the air cylinder, setting a foundation for later analysis on the mechanism of troubles.

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33

Böttcher, Lars, S. Karaszkiewicz, D. Manessis, Eckart Hoene, and A. Ostmann. "Next Generation High Power Electronic Modules Based on Embedded Power Semiconductors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (January 1, 2014): 000694–719. http://dx.doi.org/10.4071/2014dpc-tp12.

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The spectrum of conventional power electronics packaging reaches from SMD packages for power chips to large power modules. In most of these packages the power semiconductors are connected by bond wires, resulting in large resistances and parasitic inductances. Power chip packages have to carry semiconductors with increasing current densities. Conventional wire bonds are limiting their performance. Today's power modules are based on DCB (Direct Copper bonded) ceramic substrates. IGBT switches are mounted onto the ceramic and their top side contacts are connected by thick Al wires. This allows one wiring layer only and makes an integration of driver chips very difficult. Additionally bond wires result in a high stray inductance which limits the switching frequency. Especially for the use of ultra-fast switching semiconductors, like SiC and GaN, it is very difficult to realize low inductive packages. The embedding of chips offers a solution for many of the problems in power chip packages and power modules. While chip embedding was an academic exercise a decade ago, it is now an industrial solution. A huge advantage of packaging using PCB technology is the cost-effective processing on large panel. Furthermore embedded packages and modules allow either double-side cooling or 3D assembly of components like capacitors, gate drivers or controllers. The advanced results of research projects will be discussed in the paper. An ultra-low inductance power module with SiC switches at 20 A / 600 V has been realized and characterized. The DC link inductance of the module was 0,8 nH only. These results sparked a huge interest in currently starting follow up projects creating package for fast switches. In a further project power modules for automotive power inverters for motor control are under development. As a project demonstrator, a 10 kW module with IGBTs and diodes at 400 V / 500 A, was manufactured. This demonstrator is based on high power PCB technology and was fully characterized; the results will be presented in detail. Recently started research projects will face the challenges of MW solar inverters at 1000 A and 1000 V, using SiC semiconductors as switches. First concepts will be presented as an outlook.

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34

Zhou, Shengqi, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, and Junke Wu. "The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module." Active and Passive Electronic Components 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/309789.

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Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn) theory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules timely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects. Due to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT module such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate voltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor parameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.

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35

Ghimire, Pramod, Angel Ruiz de Vega, Szymon Beczkowski, Bjorn Rannestad, Stig Munk-Nielsen, and Paul Thogersen. "Improving Power Converter Reliability: Online Monitoring of High-Power IGBT Modules." IEEE Industrial Electronics Magazine 8, no. 3 (September 2014): 40–50. http://dx.doi.org/10.1109/mie.2014.2311829.

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36

Chen, Nan, Filippo Chimento, Muhammad Nawaz, and Liwei Wang. "Dynamic Characterization of Parallel-Connected High-Power IGBT Modules." IEEE Transactions on Industry Applications 51, no. 1 (January 2015): 539–46. http://dx.doi.org/10.1109/tia.2014.2330075.

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37

Abbate, C., G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, and R. Manzo. "The robustness of series-connected high power IGBT modules." Microelectronics Reliability 47, no. 9-11 (September 2007): 1746–50. http://dx.doi.org/10.1016/j.microrel.2007.07.036.

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38

Qian, Cheng, Amir Mirza Gheitaghy, Jiajie Fan, Hongyu Tang, Bo Sun, Huaiyu Ye, and Guoqi Zhang. "Thermal Management on IGBT Power Electronic Devices and Modules." IEEE Access 6 (2018): 12868–84. http://dx.doi.org/10.1109/access.2018.2793300.

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39

Lefranc, G., T. Licht, H. J. Schultz, R. Beinert, and G. Mitic. "Reliability testing of high-power multi-chip IGBT modules." Microelectronics Reliability 40, no. 8-10 (August 2000): 1659–63. http://dx.doi.org/10.1016/s0026-2714(00)00185-2.

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40

BELYAEV, A. V., and R. N. POLYAKOV. "ANALYSIS OF THE RELIABLE STATE OF POWER ELECTRONICS BY CONTROL OF THERMAL ELECTRIC PARAMETERS." Fundamental and Applied Problems of Engineering and Technology 2 (2021): 172–77. http://dx.doi.org/10.33979/2073-7408-2021-346-2-172-177.

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The article discusses an approach to creating a simulation mathematical model of the operation of power IGBT modules for the subsequent analysis of data used to assess the operational state and determine the residual life. Methods for calculating the main controlled parameters are presented, modes of operation of IGBT devices as part of converter equipment are considered.

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41

Scofield, James D., Joseph Neil Merrett, Jim Richmond, Anant K. Agarwal, and Scott Leslie. "Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules." Materials Science Forum 645-648 (April 2010): 1119–22. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1119.

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In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200°C (Tj), SiC MOSFET power modules configured in a dual-switch topology. Each switch-diode pair was populated by 2 x 56 mm2 SiC MOSFETs and 2 x 32 mm2 SiC junction barrier Schottky (JBS) diodes providing the 100 A rating at 200°C. Static and dynamic characterization, over rated temperature and power ranges, highlights the performance potential of this technology for highly efficient drive and power conversion applications. Electrical performance comparisons were also made between SiC power modules and equivalently rated and packaged IGBT modules. Even at a modest Tj=125°C, conduction and dynamic loss evaluation for 20kHz, Id=100A operation demonstrated a significant efficiency advantage (38-43%) over the IGBT components. Initial reliability data also illustrates the potential for SiC technology to provide robust performance in harsh environments.

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42

Luo, Dan, Minyou Chen, Wei Lai, Hongjian Xia, Xueni Ding, and Zhenyu Deng. "A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement." Electronics 10, no. 2 (January 15, 2021): 194. http://dx.doi.org/10.3390/electronics10020194.

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Bond wire lift-off will cause an increase of remaining wires’ power dissipation, which usually is ignored for healthy modules. However, only partial wires’ power dissipation transfers through thermal path from junction to case, which will lead to overestimate the whole power dissipation from collector to emitter pole and underestimate the calculated thermal resistance using the proportion of temperature difference to power dissipation. A FEM model is established to show the change of heat flow after bond wires were removed, the temperature of bond wires increases, and the measured thermal resistance decrease after bond wires lift-off. It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. This conclusion might be helpful to indicate the bond wires lift-off and solder fatigue by comparing the change of measured thermal resistance. Using the Kelvin setup to measure thermal resistance will cause misjudgment of failure mode due to the ignoring of wires’ power dissipation. This paper proposed that the lift-off of bond wires will lead to underestimating the thermal resistance measurement, which will overestimate the lifetime of IGBT module and misjudge its state of health.

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43

Hasan, Md Nazmul, Timothy Polom, Dominik Holzmann, Perla Malagó, Alfred Binder, and Ali Roshanghias. "Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters." Electronics 11, no. 9 (April 25, 2022): 1373. http://dx.doi.org/10.3390/electronics11091373.

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This paper demonstrates the feasibility of the printed copper (Cu) paste interconnects for applications in power semiconductor modules and switching converters. Copper sinter paste interconnects denoted as “Sinterconnects” have been recently introduced as an alternative to wire-bonding technology for power electronic device packaging. However, the electrical domain properties of these novel interconnects have not yet been investigated in detail. To address this research opportunity, this paper evaluates the performance of two different types of Sinterconnects applied to multi-chip, insulated gate bipolar transistor (IGBT) power modules. First, parasitic or stray inductances of these Sinterconnected systems are calculated analytically and by using three-dimensional finite element (FE) analysis. In addition to that, resistivity (ρ) of those has been analysed and compared with conventional wire bond technology. Finally, the performances of the Sinterconnects in power device assemblies are experimentally investigated. Two Sinterconnect structures (i.e., printed Cu paste and Cu clip attach) as well as a state-of-the-art wire-bonded IGBT module, have been integrated into a switching DC-DC converter and benchmarked. Experimental measurements show how converters with Sinterconnects enable efficient power conversion.

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44

Hasan, Md Nazmul, Timothy Polom, Dominik Holzmann, Perla Malagó, Alfred Binder, and Ali Roshanghias. "Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters." Electronics 11, no. 9 (April 25, 2022): 1373. http://dx.doi.org/10.3390/electronics11091373.

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This paper demonstrates the feasibility of the printed copper (Cu) paste interconnects for applications in power semiconductor modules and switching converters. Copper sinter paste interconnects denoted as “Sinterconnects” have been recently introduced as an alternative to wire-bonding technology for power electronic device packaging. However, the electrical domain properties of these novel interconnects have not yet been investigated in detail. To address this research opportunity, this paper evaluates the performance of two different types of Sinterconnects applied to multi-chip, insulated gate bipolar transistor (IGBT) power modules. First, parasitic or stray inductances of these Sinterconnected systems are calculated analytically and by using three-dimensional finite element (FE) analysis. In addition to that, resistivity (ρ) of those has been analysed and compared with conventional wire bond technology. Finally, the performances of the Sinterconnects in power device assemblies are experimentally investigated. Two Sinterconnect structures (i.e., printed Cu paste and Cu clip attach) as well as a state-of-the-art wire-bonded IGBT module, have been integrated into a switching DC-DC converter and benchmarked. Experimental measurements show how converters with Sinterconnects enable efficient power conversion.

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45

Yonezawa, Yoshiyuki, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, T. Deguchi, Tomohisa Kato, Shinsuke Harada, et al. "Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs." Materials Science Forum 821-823 (June 2015): 842–46. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.842.

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Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-state current of 20 A was obtained at the low on-state voltage (Von) of 4.8 V. RonAdiff was 23 mΩ·cm2 at Von = 4.8 V. In order to evaluate the switching characteristics of the IE-IGBT, ultrahigh-voltage power modules were assembled. A chopper circuit configuration was used to evaluate the switching characteristics of the IE-IGBT. Smooth turn-off waveforms were successfully obtained at VCE = 6.5 kV and ICE = 60 A in the temperature range from room temperature to 250°C.

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46

Loganathan, P., and P. Selvam. "Amalgam Illogical Controller Design Using Amended Moth System for Heat Reduction in Insulated Gate Bipolar Transistor." International Journal of Mathematics and Computers in Simulation 16 (June 25, 2022): 67–75. http://dx.doi.org/10.46300/9102.2022.16.11.

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The electric vehicle is seen as a possible replacement for current-generation automobiles and to address the rising pollution. In electrical drives, Insulated Gate Bipolar Transistor (IGBT) modules deliver power to the motor generate a lot of heat during switching. However, heat generation in IGBT hinders the performance of the electric vehicle. The foremost existing techniques analyze the heat however does not control the heat production in the IGBT module, and also high heat density leads to failing components. Thus to reduce the heat generated in the IGBT module, the work proposed an amalgam illogical controller that handles nonlinearity and provides a quick response. This controller is further tuned by Amended Moth System (AMS) to reduce heat consumption in the IGBT module with electrical parameters. Furthermore, the IGBT is complex to excessive voltage and excessive temperature therefore the current and voltage harmonics in the inverter are reduced by a seamless genuine adaptive filter that detects and suppresses the specified harmonics in the estimated back-EMF, consequently reducing the harmonic position error in the estimated rotor position. Even though there is a problem with a wide range of frequency in the electric motor. To reduce the switching frequency supremacy harm checker is incorporated which is forced to choose active and zero voltage vectors alternatively, to decrease the variation in the switching frequency. Thus the proposed outcomes efficiently tackle the issues in EV and greatly reduce heat consumption in the IGBT module.

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47

Denk, Marco, and Mark-M. Bakran. "Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car." Advances in Power Electronics 2015 (March 2, 2015): 1–14. http://dx.doi.org/10.1155/2015/652389.

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The accuracy of the lifetime calculation approach of IGBT power modules used in hybrid-electric powertrains suffers greatly from the inaccurate knowledge of application typical load-profiles. To verify the theoretical load-profiles with data from the field this paper presents a concept to record all junction temperature cycles of an IGBT power module during its operation in a test vehicle. For this purpose the IGBT junction temperature is measured with a modified gate driver that determines the temperature sensitive IGBT internal gate resistor by superimposing the negative gate voltage with a high-frequency identification signal. An integrated control unit manages the TJ measurement during the regular switching operation, the exchange of data with the system controller, and the automatic calibration of the sensor system. To calculate and store temperature cycles on a microcontroller an online Rainflow counting algorithm was developed. The special feature of this algorithm is a very accurate extraction of lifetime relevant information with a significantly reduced calculation and storage effort. Until now the recording concept could be realized and tested within a laboratory voltage source inverter. Currently the IGBT driver with integrated junction temperature measurement and the online cycle recording algorithm is integrated in the voltage source inverter of first test vehicles. Such research will provide representative load-profiles to verify and optimize the theoretical load-profiles used in today’s lifetime calculation.

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48

Wani, Faisal, Udai Shipurkar, Jianning Dong, and Henk Polinder. "Thermal Cycling in Converter IGBT Modules with Different Cooling Systems in Pitch- and Active Stall-Controlled Tidal Turbines." Energies 14, no. 20 (October 9, 2021): 6457. http://dx.doi.org/10.3390/en14206457.

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This paper compares active and passive cooling systems in tidal turbine power electronic converters. The comparison is based on the lifetime of the IGBT (insulated gate bipolar transistor) power modules, calculated from the accumulated fatigue due to thermal cycling. The lifetime analysis accounts for the influence of site conditions, namely turbulence and surface waves. Results indicate that active cooling results in a significant improvement in IGBT lifetime over passive cooling. However, since passive cooling systems are inherently more reliable than active systems, passive systems can present a better solution overall, provided adequate lifetime values are achieved. On another note, the influence of pitch control and active speed stall control on the IGBT lifetime was also investigated. It is shown that the IGBT modules in pitch-controlled turbines are likely to have longer lifetimes than their counterparts in active stall-controlled turbines for the same power rating. Overall, it is demonstrated that passive cooling systems can provide adequate cooling in tidal turbine converters to last longer than the typical lifetime of tidal turbines (>25 years), both for pitch-controlled and active speed stall-controlled turbines.

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Wani, Faisal, Udai Shipurkar, Jianning Dong, Henk Polinder, Antonio Jarquin-Laguna, Kaswar Mostafa, and George Lavidas. "Lifetime Analysis of IGBT Power Modules in Passively Cooled Tidal Turbine Converters." Energies 13, no. 8 (April 12, 2020): 1875. http://dx.doi.org/10.3390/en13081875.

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Thermal cycling is one of the major reasons for failure in power electronic converters. For submerged tidal turbine converters investigating this failure mode is critical in improving the reliability, and minimizing the cost of energy from tidal turbines. This paper considers a submerged tidal turbine converter which is passively cooled by seawater, and where the turbine has fixed-pitch blades. In this respect, this study is different from similar studies on wind turbine converters, which are mostly cooled by active methods, and where turbines are mostly pitch controlled. The main goal is to quantify the impact of surface waves and turbulence in tidal stream velocity on the lifetime of the converter IGBT (insulated gate bipolar transistor) modules. The lifetime model of the IGBT modules is based on the accumulation of fatigue due to thermal cycling. Results indicate that turbulence and surface waves can have a significant impact on the lifetime of the IGBT modules. Furthermore, to accelerate the speed of the lifetime calculation, this paper uses a modified approach by dividing the thermal models into low and high frequency models. The final calculated lifetime values suggest that relying on passive cooling could be adequate for the tidal converters as far as thermal cycling is concerned.

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Peng, Xi, Sheng Yin, and Yingqin Zou. "Research on dynamic current sharing method of parallel connected IGBT modules for NPC three level converters." Journal of Physics: Conference Series 2113, no. 1 (November 1, 2021): 012055. http://dx.doi.org/10.1088/1742-6596/2113/1/012055.

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Abstract The parallel connection of IGBTs has been being applied in high power neutral point clamped (NPC) three level converters. This paper investigates the impact of gate parameters (gate resistor and capacitance) on dynamic current imbalance of parallel connected IGBT for NPC three level converter. A gate parameters calculation method is proposed in the paper, and the delay time and collector current difference can be analysed quantitatively. Experimental results have shown the effectiveness of the method.

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Journal articles on the topic 'IGBT power modules'

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