Relevant bibliographies by topics / IGBT power modules

Academic literature on the topic 'IGBT power modules'

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Published: 14 March 2023

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Journal articles on the topic "IGBT power modules"

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Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.

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Although IGBT modules are widely used as power semiconductor switch in many high power applications, there are still reliability problems related to the current unbalance between paralleled IGBTs that may destroy the whole module and, eventually, the power system. Indeed, short-circuit and overvoltage events can also destroy some of the IGBTs of the power module. In this sense, the instantaneous monitoring of the anode current and voltage values and the use of a more intelligent gate driver able to work with the signals of each particular IGBT of the module would enhance its operating lifetime. In this sense, the paper describes the design, optimization, fabrication and basic performances of 3.3kV-50A punch-through IGBTs for traction and tap changer applications where anode current and voltage sensors are monolithically integrated within the IGBT core.
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Fu, Xiao Jin, Chun Lan Que, Shuai Zhang, En Xing Yang, and Hang Ye. "The Design of Parallel IGBT Modular for Modularized Wind Power Converter." Applied Mechanics and Materials 734 (February 2015): 873–76. http://dx.doi.org/10.4028/www.scientific.net/amm.734.873.

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Aiming at meeting the requirement of modularization for megawatt wind power converter, the paralleling structure of IGBT modules was designed. Fast transient response and current sharing capabilities of the paralleled IGBT modules were regarded as the main research object, the drive circuit and adapter plate was also designed. utilizing the new type of protection circuit on the adapter plate to ensure reliability of the paralleled IGBT modules. As one of the most promising technologies, Digital drive technology was applied as the conception of the driver, and the core of the driver is FPGA and A/D sampling circuit. Using digital driver had the advantages of good consistency pulse parameters, flexible software programming and high anti-jamming ability. The current equalization among the IGBT modules was verified by means of the field test. Based on the experiment, the characteristics of balancing parallel IGBTs' currents were better than previous designs. It is concluded that the whole design of the system was reasonable and can meet the demands of the engineering applications.<b></b>
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Li, Cui, Yao Sheng Li, Jun Xu Liu, Hua Qiang Shao, Zhong yuan Chen, and Jin Yuan Li. "Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test." Journal of Physics: Conference Series 2290, no. 1 (June 1, 2022): 012041. http://dx.doi.org/10.1088/1742-6596/2290/1/012041.

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Abstract In Power cycling test, for low-voltage and low-power modules, it is generally considered that the saturation voltage drop VCE(sat) reaches 105% of the initial value or the thermal resistance Rth reaches 120% of the initial value as the basis for judging the failure of the IGBT module. However, since the high-voltage and high-power IGBT modules are connected in parallel with multiple chips, there are differences in the aging speed of the chips, and the degradation of individual chips has little influence on the parameters of the entire module, so the failure judgment standard may not be applicable. In order to obtain the degradation of the characteristic parameters of the high-voltage and high-power IGBT module in the power cycle test, this paper selects the 6500V/600A IGBT module as the research object, adopts the experimental method of constant junction temperature fluctuation, and tests the module parameters after every cycle 20,000 times until the module fails. Three failure modes were found through the test: GE failure, CE failure, GE and CE failure. And the degradation law of the parameters of the high-voltage and high-power IGBT module during the power cycling test was obtained.
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Wang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones, and Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems." Advanced Materials Research 846-847 (November 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.

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In this work, the methodology and procedures of lifetime prediction for power IGBT modules are presented. Firstly, we discuss the long term reliability tests of power modules for developing lifetime models, and review some reported lifetime models. Then, the procedures of lifetime prediction in real applications are addressed, which include power loss calculations based on the actual mission profile, the conversion of power loss profile to temperature profile according to the module's thermal properties, the temperature cycles counting by Rainflow algorithm, and lifetime calculation by the fatigue linear accumulation damage theory. Finally, the lifetime of a 3300V/800A IGBT module manufactured by Dynex Semiconductor of China Southern Railway applied in metro traction systems is predicted.
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Levchuk, Svetlana, Monika Poebl, and Gerhard Mitic. "Diamond Composites for Power Electronics Application." Advanced Materials Research 59 (December 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.

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In view of power electronics applications, baseplates made from metal diamond composites have been manufactured and characterised. The surface contours of the baseplates were measured during thermal loads up to 180°C starting at room temperature with help of the TherMoiré technique. X-ray analysis investigation was performed to detect porosity and local inhomogeneities of the baseplates. Al- and Cu-based diamond composite baseplates were Ni-plated and used for manufacturing of 3.3 kV IGBT modules. The solder layer between AlN AMB (active metal brazing) substrates and baseplates was investigated by ultrasonic and X-Ray analyses. Thermal resistance of the manufactured IGBT modules was characterised and compared to that of IGBT modules with AlSiC or Cu baseplates. The influence of thermal cycling on the solder layer and thermal resistance of the manufactured module was investigated.
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Zheng, Qing Yuan, Min You Chen, Bing Gao, and Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model." Advanced Materials Research 986-987 (July 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.

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Reliability of IGBT power module is one of the biggest concerns regarding wind power system, which generates the non-uniform distribution of temperature and thermal stress. The effects of non-uniform distribution will cause failure of IGBT module. Therefore, analysis of thermal mechanical stress distribution is crucially important for investigation of IGBT failure mechanism. This paper uses FEM method to establish an electrical-thermal mechanical coupling model of IGBT power module. Firstly, thermal stress distribution of solder layer is studied under power cycling. Then, the effects of initial failure of solder layer on the characteristic of IGBT module is investigated. Experimental results indicate that the strain energy density and inelastic strain are higher which will reduce reliability and lifetime of power modules.
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Wu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.

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As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.
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Shen, Bing, and Yifa Sheng. "Research on junction temperature monitoring technology of IGBT modules." Journal of Physics: Conference Series 2378, no. 1 (December 1, 2022): 012043. http://dx.doi.org/10.1088/1742-6596/2378/1/012043.

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Abstract Modular Multilevel Converter (MMC) is widely used in flexible HVDC transmission systems, IGBT module as its core power device, its failure process seriously affects the operation reliability of MMC. The high junction temperature is an important reason for the failure of the IGBT module, so monitoring the junction temperature of IGBT module is an important means to ensure the stable operation of the system. According to the topological structure of IGBT module, the current junction temperature monitoring methods of IGBT module are summarized and compared. According to the shortcomings of the current research and the current research status, the research direction of IGBT module junction temperature monitoring is prospected.
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Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.
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Jo, Kim, Cho, and Lee. "Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules." Electronics 8, no. 10 (October 7, 2019): 1127. http://dx.doi.org/10.3390/electronics8101127.

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This paper presents the development of a hardware simulator based on the junction-temperature of insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs). The MMC consists of various power-electronics components, and the IGBT is the main factor determining the lifetime of the MMC. The failure of IGBTs is mostly due to the junction-temperature swing; thus, the thermal profile of the IGBT should be established to predict the lifetime. The thermal behavior depends on the current flowing to the IGBT, and the load-current profile is related to the application. To establish the thermal profile of the IGBT, the proposed hardware simulator generates various shapes of output currents while the junction temperature is measured. Additionally, a controller design is presented for simulation of the arm current, which includes a direct current component as well as an alternative current component with a fundamental frequency. The validity and performance of the proposed hardware simulator and its control methods are analyzed according to various experimental results.
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Dissertations / Theses on the topic "IGBT power modules"

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Wang, Yalan. "Controlled switching of high power IGBT/diode modules." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613291.

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Signorello, Concetta. "Reduction of Switching Losses in IGBT Power Modules." Doctoral thesis, Università di Catania, 2015. http://hdl.handle.net/10761/4056.

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The purpose of this work is to study in deep the transition phenomena of IGBTs in order to evaluate different optimization strategies for losses reduction and propose a novel technique. In power applications a particular attention must be taken to such phenomena as commutation losses, overcurrents during the turn-ON and overvoltage at the turn-OFF of the devices. These phenomena are connected to non ideal behavior of real devices and stray circuit parameters. Steep profiles of current lead to large ElectroMagnetic Interference (EMI) and overvoltages, while rapid variations of the voltage can produce phenomena of "latch-up" in single IGBT or unwanted commutations. On the other hand, slow commutations are characterized by low values of dv/dt and di/dt, causing excessive losses in those power application during commutations. Therefore, it is essential to face the issue with opposite requirements at the design stage obtaining optimal tradeoff.
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Joyce, John Charles. "Current sharing and redistribution in high power IGBT modules." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621350.

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Ciappa, Mauro P. M. "Some reliability aspects of IGBT modules for high-power applications /." Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13790.

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Xiao, Di. "On Modern IGBT Modules: Characterization, Reliability and Failure Mechanisms." Thesis, Norwegian University of Science and Technology, Department of Electrical Power Engineering, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10932.

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The increased demand of offshore power conversion systems is driven by newly initiated offshore projects for wind farms and oil production. Because of long distances to shore and inaccessibility of the equipment long repair times must be expected. At the same time the offshore environment is extremely harsh. Thus, high reliability is required for the converters and it is important to have good knowledge of the switching devices. This thesis investigates switching characteristics and losses of commercially available IGBT modules to be used for this application. It focuses on switching time and switching energy losses depending on gate resistance, current and voltage levels, operation temperatures, and show differences between several devices of the same type. Some test show how device characteristics and losses when the device has been exposed to stress over a certain period.

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Ji, Bing. "In-situ health monitoring of IGBT power modules in EV applications." Thesis, University of Newcastle Upon Tyne, 2012. http://hdl.handle.net/10443/1474.

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Power electronics are an enabling technology and play a critical role in the establishment of an environmentally-friendly and sustainable low carbon economy. The electrification of passenger vehicles is one way of achieving this goal. It is well acknowledged that Electric vehicles (EVs) have inherent advantages over the conventional internal combustion engine (ICE) vehicles owing to the absence of emissions, high efficiency, and quiet and smooth operation. Over the last 20 years, EVs have improved significantly in their system integration, dynamic performance and cost. It has attracted much attention in research communities as well as in the market. In 2011 electric vehicle sales were estimated to reach about 20,000 units worldwide, increasing to more than 500,000 units by 2015 and 1.3 million by 2020 which accounts for 1.8 per cent of the total number of passenger vehicles expected to be sold that year. In general, electric vehicles use electric motors for traction drive, power converters for energy transfer and control, and batteries, fuel cells, ultracapacitors, or flywheels for energy storage. These are the core elements of the electric power drive train and thus are desired to provide high reliability over the lifetime of the vehicle. One of the vulnerable components in an electric power drive train is the IGBT switching devices in an inverter. During the operation, IGBT power modules will experience high mechanical and thermal stresses which lead to bond wire lift-off and solder joint fatigue faults. Theses stresses can lead to malfunctions of the IGBT power modules. A short-circuit or open-circuit in any of the power modules may result in an instantaneous loss of traction power, which is dangerous for the driver and other road users. These reliability issues are very complex in their nature and demand for the development of analytical models and experimental validation. This work is set out to develop an online measurement technique for health monitoring of IGBT and freewheeling diodes inside the power modules. The technique can provide an early warning prior to a power device failure. Bond wire lift-off and solder fatigue are the two most frequently occurred faults in power electronic modules. The former increases the forward voltage drop across the terminals of the power device while the latter increase the thermal resistance of the solder layers. As a result, bond wire lift-off can be detected by a highly sensitive and fast operating in-situ monitoring circuit. Solder joint fatigue is detected by measuring the thermal impedance of the power modules. This thesis focuses on the design and optimisation of the in-situ health monitoring circuit in an attempt to reducing noise, temperature variations and measurement uncertainties. Experimental work is carried out on a set of various IGBT power modules that have been modified to account for different testing requirements. Then the lifetime of the power module can be estimated on this basis. The proposed health monitoring system can be integrated into the existing IGBT driver circuits and can also be applied to other applications such as industrial drives, aerospace and renewable energy.
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Yaqub, Imran. "Investigation into stable failure to short circuit in IGBT power modules." Thesis, University of Nottingham, 2015. http://eprints.nottingham.ac.uk/30305/.

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This doctoral thesis investigates modes of failure of the IGBT power module and how these modes can be coerced from an open circuit failure mode (OCFM) to a stable short circuit failure mode (SCFM) by using different interconnect technologies and material systems. SCFM is of great importance for a number of applications where IGBT power modules are connected in series string e.g. high voltage modular multi-level converters (M2LC) where one module failing to an OCFM can shut down the whole converter. The failure modes of IGBT samples based on wirebond, flexible PCB, sandwich and press pack structured interconnect technologies have been investigated. Destructive Type-II failure test were performed which concluded that the SCFM is dependent on the energy level dissipating in the power module and the interconnect technology. The higher thermal mass and stronger mechanical constraint of the interconnect enables module to withstand higher energy dissipation. The cross-sections of the tested samples have been characterised with the scanning electron microscope and three dimensional X-ray computed tomography imaging. It was observed that the networked conductive phases within the solidification structure and the Sn-3.5Ag filled in cracks of the residual Si IGBT are responsible for low resistance conduction paths. The best networked conductive phase with lowest electrical resistance and high stability was offered by Ag if used as an intermediate interconnect material on emitter side of an IGBT. To offer a stable SCFM, a module has to be custom designed for a particular application. Hence for the applications which demand a stable SCFM, the IGBT module design becomes an integrated part of the complete power electronics system design.
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Smet, Vanessa. "Aging and failure modes of IGBT power modules undergoing power cycling in high temperature environments." Thesis, Montpellier 2, 2010. http://www.theses.fr/2010MON20075/document.

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Cette thèse a pour objet l'étude de la fiabilité de modules de puissance triphasés à IGBTs 200 A - 600 V, destinés à la construction d'onduleurs de traction pour des applications automobiles hybrides ou électriques. Ces travaux visent à évaluer la tenue de ces modules de puissance en régime de cyclage thermique actif à hautes température, en mettant l'accent sur leur résistance à la fatigue thermomécanique. Deux approches complémentaires ont été mises en oeuvre dans ce but: tests de vieillissement accéléré et modélisation numérique. Une compagne d'essais de vieillissement par cyclage actif a été menée avec des profils de température variés, définis par la température ambiante et la variation de température de jonction des IGBTs, utilisés comme facteurs d'accélération des contraintes. Au cours de ces tests, les composants ont électriquement fonctionné dans des conditions semblables à une application réelle (commande MLI). L'objectif était d'identifier les modes de défaillance, d'estimer l'influence des facteurs d'accélération du vieillissement, et d'évaluer la pertinence des indicateurs de défaillance classiques dans ces conditions de stress thermiques sévères. Aussi, afin de mieux comprendre les mécanismes de défaillance responsables de la fatigue de l'assemblage des modules considérés, une modélisation thermomécanique visant à déterminer l'impact des modèles de comportement mécanique sur la durée de vie estimée des brasures, a été développée. La réponse de l'assemblage à des contraintes de cyclage actif similaires à celles appliquées durant les essais a été évaluée par analyse numérique. Les différentes lois de comportement ont été comparées en termes de contraintes, déformations plastiques, et densité d'énergie plastique dans les brasures
This thesis is dedicated to reliability investigations led on three-phase 200~A~--~600~V IGBT power modules, designed for building drive inverters for hybrid or electric automotive traction applications. The objective was to evaluate the durability of the studied modules when they withstand power cycling in high temperature environments, and especially their resistance to thermo-mechanical fatigue. Two complementary approaches were considered: accelerated aging experiments and numerical modeling.A series of power cycling tests was carried out over a large range of temperature profiles, defined by the ambient temperature and IGBT junction temperature excursion. These quantities are used as thermal stress acceleration factors. Those experiments were led in realistic electrical conditions (PWM control scheme). They aimed at identifying the failure modes of the target devices, assessing the impact of the acceleration factors on their aging process, and evaluating the suitability of standard aging indicators as damage precursors in such harsh loading conditions. Besides, to better understand the failure mechanisms governing the fatigue life of the modules assembly, a thermo-mechanical modeling focusing on solder joints was built. Our simulation efforts concentrated on the appraisal of constitutive modeling effects on solder joints lifetime estimation. Numerical analysis of the assembly response to power cycling in similar operating conditions as practiced in experiments were performed. Behavior laws were then compared on stress, plastic strain, and strain energy density developed within the joints
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Azar, Ramy. "A novel electro-thermal IGBT model for the design and analysis of large power IGBT modules in the spice environment." Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.619985.

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Belmehdi, Yassine. "Contribution à l'identification de nouveaux indicateurs de défaillance des modules de puissance à IGBT." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14258/document.

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L’électronique de puissance a un rôle de plus en plus grandissant dans les systèmes de transports : voitures électriques et hybrides, trains et avions. Pour ces applications, la sécurité est un point critique et par conséquent la fiabilité du système de puissance doit être optimisée. La connaissance du temps de fonctionnement avant défaillance est une donnée recherchée par les concepteurs de ces systèmes. Dans cette optique, un indicateur de défaillance précoce permettrait de prédire la défaillance des systèmes avant que celle-ci soit effective. Dans cette thèse, nous nous sommes intéressés à la caractérisation électromécanique des puces de puissance IGBT et MOSFET. L’exploitation de cette caractérisation devrait permettre, à plus long terme, de mettre en évidence un indicateur de l’état mécanique des assemblages de puissance à des fins de fiabilité prédictive
Power electronics has a role increasingly growing up in transport:electric and hybrid vehicles, trains and aircraft. For these applications, security is a critical point, thus the reliability of the power assembly must be optimized. The knowledge of time to failure is very important information for the designers of these systems. Inthis context, an early failure indicator would predict system failuresbefore it becomes effective. In this thesis, we focused on the electromechanical characterization of power transistors: MOSFET and IGBT. Based on these results this electromechanical characterization should help us in the longer term, to highlight an early failure indicator of the power assembly
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Books on the topic "IGBT power modules"

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Yun, Chan-Su. Static and dynamic thermal behavior of IGBT power modules. Konstanz: Hartung-Gorre, 2001.

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Ciappa, Mauro. Some reliability aspects of IGBT modules for high-power applications. Konstanz: Hartung-Gorre, 2001.

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Rectifier, International. Power interface products: HEXFET and IGBT muli-chip power SIP modules; designer's manual and product databook. El Segundo, CA: International Rectifier, 1992.

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Book chapters on the topic "IGBT power modules"

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Bharathsimha Reddy, A., S. N. Mahato, and Nilanjan Tewari. "Static and Dynamic Analysis of IGBT Power Modules for Low and High-Power Range Electric Drives." In Recent Advances in Power Electronics and Drives, 119–36. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-7728-2_9.

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Zhou, Mingchao, Lei Wang, Mengxue Guo, Yanbei Sha, Qiuli Liu, and Lijun Diao. "Design and Research of Accelerated Aging Test Platform for IGBT Power Module." In Proceedings of the 5th International Conference on Electrical Engineering and Information Technologies for Rail Transportation (EITRT) 2021, 179–86. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-9913-9_21.

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Fan, Zhigang, Dechun Zhu, Quan Jin, and Xiaozhou Shang. "Research on Flow Operation Scheduling for Flexible Production of IGBT Power Module Assemble." In Proceedings of the Eighth Asia International Symposium on Mechatronics, 1190–200. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1309-9_115.

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Sefsaf, H., B. Nadji, and Y. Yakhelef. "Characterization and Simulation of the Power IGBT Module Used in VFD for Drilling Applications." In Lecture Notes in Networks and Systems, 665–71. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21216-1_67.

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"Power IGBT Modules." In Insulated Gate Bipolar Transistor IGBT Theory and Design, 465–98. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/047172291x.ch9.

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"Manufacturing of Power IGBT Modules." In Power Electronic Modules. CRC Press, 2004. http://dx.doi.org/10.1201/9780203507308.ch4.

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Lu, Zhiyu, Maksim G. Popov, Elena V. Zakharova, Mikhail V. Gushin, and Dionizio Paschoareli Jr. "A Research Method of IGBT Non-Stationary Mode for Power and Electrical Equipment Control." In Advances in Transdisciplinary Engineering. IOS Press, 2022. http://dx.doi.org/10.3233/atde220486.

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The non-stationary mode characteristics of the generalized power equipment numerical experiments are analyzed, and the electrophysical dynamic characteristics and reliability of the IGBT in the power conversion process are studied. Based on the results of short-circuit numerical experiments and the steady-state mode of pulse width control, this paper introduces a method for analyzing the nonlinear dynamic process of IGBT drive modules during power conversion. The structure of a software algorithm for conducting numerical experiments to study the non-stationary operation mode of asynchronous electromechanical machines is proposed, and the numerical solution of transient nonlinear differential-algebraic equations of electrical equipment is described by gradient parameter method. The results of this study will help to study the dynamic nonlinear characteristics of the operation process of power and electrical equipment control and automation tools, and have practical significance for evaluating the computational efficiency and reliability of developing mathematical models in the next research work.
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"Implementation of a Temperature Measurement Method for Condition Monitoring of IGBT Converter Modules in Online-Mode." In Power Electrical Systems, 179–200. De Gruyter Oldenbourg, 2018. http://dx.doi.org/10.1515/9783110470529-011.

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Makhloufi, Abderahman, Younes Aoues, Abdelkhalak El Hami, Bouchaib Radi, Philippe Pougnet, and David Delaux. "Study on the Thermomechanical Fatigue of Electronic Power Modules for Traction Applications in Electric and Hybrid Vehicles (IGBT)." In Reliability of High-Power Mechatronic Systems 1, 213–51. Elsevier, 2017. http://dx.doi.org/10.1016/b978-1-78548-260-1.50010-8.

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Yang, Fei, Shengting Kuai, and Zhe Wang. "Study on Water Cooling Performance of IGBT Module in Wind Power Converter." In Advances in Transdisciplinary Engineering. IOS Press, 2021. http://dx.doi.org/10.3233/atde210262.

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Thermal design of IGBT is the key technology on wind power converter design. This paper introduced a theoretical calculation method of IGBT power loss which is applicable in wind power converter engineering applications. Meantime, the corresponding mathematic model was established. Considering the divergence of application environments as well as the characteristics of water-cooling heat dissipation, simulation models of two different inlet and outlet position radiators were built in Ansys software. And then the cooling capacity of these two types of radiators was analyzed though simulation. According to the simulation results, the ipsilateral inlet and outlet channel mode radiator was selected. After the sample production of the water cooling plate is completed, the experimental platform is built and the sample was verified. Finally, the experiment results indicated the rationality and practicability of the thermal design and simulation, which provided critical references of IGBT water cooling system design. In this paper, the performance of water cooling radiators is studied, which also provides a reference for the design of other high power electronic products.
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Conference papers on the topic "IGBT power modules"

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Jacob, P. "Reliability testing and analysis of IGBT power semiconductor modules." In IEE Colloquium on `IGBT Propulsion Drives'. IEE, 1995. http://dx.doi.org/10.1049/ic:19950531.

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Newcombe, D. R., Dinesh Cha, C. Bailey, and H. Lu. "Reliability metrics for IGBT power modules." In High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582869.

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Gutierrez, Erick, Kevin Lin, Douglas DeVoto, and Patrick McCluskey. "Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6470.

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Abstract:
Abstract Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for high-power applications. Operation and environmental stresses can cause these power modules to progressively degrade over time, potentially leading to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization were performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment aimed to assess the potential damage effects of thermal cycling on the die attach, results indicated that wire bond degradation was the life-limiting failure mechanism.
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Jin, Qichen, Johannes K. Mendizabal, Nenad Miljkovic, and Arijit Banerjee. "In Situ Power Loss Estimation of IGBT Power Modules." In 2021 IEEE International Electric Machines & Drives Conference (IEMDC). IEEE, 2021. http://dx.doi.org/10.1109/iemdc47953.2021.9449570.

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Medaule, D. "Latest technology improvements of Mitsubishi IGBT modules." In IEE Colloquium on New Developments in Power Semiconductor Devices. IEE, 1996. http://dx.doi.org/10.1049/ic:19960862.

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Incau, Bogdan Ioan, Ionut Trintis, and Stig Munk-Nielsen. "Switching speed limitations of high power IGBT modules." In 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE, 2015. http://dx.doi.org/10.1109/epe.2015.7309369.

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Czubay, John, Sung Chung, and Prakash H. Desai. "IGBT Power Modules Evaluation for GM Electrified Vehicles." In WCX World Congress Experience. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2018. http://dx.doi.org/10.4271/2018-01-0460.

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Iura, Shinichi, John F. Donlon, and Eckhard Thal. "Design approach of newly developed 3.3kV IGBT modules." In 2007 European Conference on Power Electronics and Applications. IEEE, 2007. http://dx.doi.org/10.1109/epe.2007.4417346.

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Zhu, Nan, Dehong Xu, Xingyao Zhang, Min Chen, Seiki Igarashi, and Tatsuhiko Fujihira. "Switching noise suppression for hybrid IGBT modules." In 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE 2015-ECCE Asia). IEEE, 2015. http://dx.doi.org/10.1109/icpe.2015.7167878.

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Qi, Tao, Jeff Graham, and Jian Sun. "Characterization of IGBT modules for system EMI simulation." In 2010 IEEE Applied Power Electronics Conference and Exposition - APEC 2010. IEEE, 2010. http://dx.doi.org/10.1109/apec.2010.5433545.

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Reports on the topic "IGBT power modules"

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Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada616757.

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