Journal articles on the topic 'IEEE 802.11'

Thin film transistors (TFTs) with the channel of amorphous oxide semiconductors (AOSs) represented by amorphous Indium-Gallium-Zinc Oxide (a-IGZO) are now applied to drive pixels of the state-of the art display based on high mobility, good homogeneity, easy fabrication and optical transparency [1]. Recently, larger mobility TFTs are highly demanded for emerging applications such as ultra-high vision and memories. However, there is a critical obstacle to be overcome, i.e., an empirical trade-off rule in oxide TFTs between mobility and stability. Higher mobility TFTs possess less stability to various types of stress (negative bias-thermal stress instability, NBTS, positive bias-thermal stress instability, PBTS, and negative bias-illumination stress instability, NBIS). The Elucidation of origin for this trade-off rule and new approach are required to realize high mobility and high stability TFTs. We clarify that the origin of this trade-off through comparison in TFTs between IGZO with low mobility and high stability and ITZO with high mobility and low stability. A critical phenomenon was noted during the conventional TFT fabrication; CO-related impurity donates electrons to Indium-Tin-Zinc Oxide (ITZO) with high mobility under the negative bias stress condition but such CO-related impurity effect is negligible in IGZO with lower mobility than ITZO [2]. This finding may be understood by considering that large difference in ECBM determines the transfer of electron generated by adsorbed CO-related species on the back surface of ITZO [3]. Based on this model and this finding, we successfully fabricated the most stable ITZO TFT with a high mobility of 70 cm2/Vs by eliminating CO-related impurity and further passivation; NBTS (-20V, 60 oC, 3600 s, ΔVth: -0.02 V), PBTS (+20 V, 60 oC, 3600 s, ΔVth: 0.12 V) and NBIS (-20V, 15000 lx, 3600s, ΔVth: -1.33 V). [1] Hosono, H., & Kumomi,K., (ed), Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory (Wiley, 2022); Hosono, H. (2018). How we made the IGZO transistor. Nature Electronics, 1(7), 428-428. [2]Shiah, Y. S., Sim, K., Ueda, S., Kim, J., & Hosono, H. (2021). Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs. IEEE Electron Device Letters, 42(9), 1319-1322. [3] Shiah, Y. S., Sim, K., Shi, Y., Abe, K., Ueda, S., Sasase, M., Kim,J., & Hosono, H. (2021). Mobility–stability trade-off in oxide thin-film transistors. Nature Electronics, 4(11), 800-807.

Phase change memory (PCM) is a high speed, high density non-volatile resistive memory technology that utilizes different phases (crystalline and amorphous) of phase change materials such as Ge2Sb2Te5 (GST) to store information [1]. Here, the material undergoes two types of reversible switching phenomena: (i) Ovonic Threshold Switching (OTS), which causes the amorphous phase of the material to switch from a highly resistive state to conductive state with application of high electric fields, resulting in current flow and (ii) Ovonic Memory Switching (OMS), which is due to the change of the phase of the material between amorphous and crystalline phases induced by heating [2]. Even though PCM entered high volume manufacturing, the electronic properties of the phase change materials are still not well understood [3,4]. In this work, we construct the energy band diagram of amorphous GST as a function of temperature using a temperature dependent model of effective activation energy of conduction in metastable amorphous GST [5], which we obtained from high-speed experiments on GST line-cells [6]. Assuming the bandgap energy to linearly decrease with temperature [7,8] and p-type conduction (based on positive Seebeck coefficients measured in a wide temperature range [9]) , we determine a temperature dependent Fermi energy level from 0K to melting temperature, Tmelt ~ 858 K. Liquid GST is expected to become metallic (bandgap collapsing to 0) at ~ 894K, based on the experimental results. We also estimate the carrier concentration at Tmelt utilizing the latent heat of fusion (126 kJ/kg) [10] to be pmelt = 1.47 x 1022 cm-3. Using the melt resistivity measured on GST thin film, we calculate the carrier mobility at melting point as µmelt ~0.187 cm2/V-s, close to the previously reported value of 0.15 cm2/V-s based on crystalline state mobility and a density of states calculation [2]. Assuming a weak temperature dependence of the mobility [5], we obtain the carrier concentration of ~3.37× 1017 cm-3 at room temperature which lies within the ~1017-1018 cm-3 range estimated in a former study [3]. Finally, we calculate conduction activation energy of as-deposited amorphous GST from temperature dependent Seebeck coefficient measured simultaneously with the resistance [9]. The activation energy varies as a parabolic function of temperature where it starts from 0 eV at 0 K, reaches a peak of ~0.257 eV near glass transition temperature (~400 K) with the room temperature value of ~0.24 eV and becomes 0 eV again at ~810 K. We also utilize the Seebeck coefficient measurements along with the band edges and Fermi energy level information from the energy band diagram to calculate the ratio of minority carrier concentration to the total carrier concentration as a function of temperature; this is useful to predict the temperature beyond which bipolar conduction becomes significant. Acknowledgment: Analysis is performed with the support of US National Science Foundation (NSF) award ECCS 1711626. The experimental data used for this analysis were collected with the support of US NSF DMR-1710468 on devices fabricated with the support of US Department of Energy Office of Basic Energy Sciences. References: [1] S. W. Fong et al., IEEE Trans. Electron Devices, vol. 64, no. 11, pp. 4374–4385, 2017. [2] A. Pirovano et al., IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 452–459, 2004. [3] T. Kato et al., Japanese J. Appl. Physics, vol. 44, no. 10, pp. 7340–7344, 2005. [4] M. Schumacher et al., Sci. Rep., vol. 6, no. June, pp. 1–11, 2016. [5] S. Muneer et al., AIP Adv., vol. 8, no. 6, p. 65314, Jun. 2018. [6] F. Dirisaglik et al., Nanoscale, vol. 7, no. 40, pp. 16625–16630, 2015. [7] E. M. Vinod et al., J. Non. Cryst. Solids, vol. 356, no. 41–42, pp. 2172–2174, 2010. [8] Y. Kim et al., Appl. Phys. Lett., vol. 90, no. 17, pp. 1–4, 2007. [9] L. Adnane et al., J. Appl. Phys., vol. 122, no. 12, 2017. [10] Z. Fan et al., Japanese J. Appl. Physics, vol. 42, no. 2 B, pp. 800–803, 2003.

Background The increasing number of older adults with mental, behavioral, and memory challenges presents significant public health concerns. Reminiscence is one type of nonpharmacological intervention that can effectively evoke memories, stimulate mental activities, and improve psychological well-being in older adults through a series of discussions on previous experiences. Fully immersive virtual reality (FIVR) may be a useful tool for reminiscence interventions because it uses realistic virtual environments connected to a person’s significant past stories. Objective This review aims to examine empirical evidence regarding the application of FIVR in reminiscence interventions, its usability and acceptability, and its effectiveness in assisting the intervention to achieve optimal outcomes. Methods We followed the PRISMA (Preferred Reporting Items for Systematic Reviews and Meta-Analyses) approach for scoping reviews. The PubMed, PsycINFO, Embase, CINAHL, Web of Science, ACM, and IEEE Xplore electronic databases were used for the search. We included peer-reviewed studies that used FIVR as an assistive tool for reminiscence interventions; were published between January 1, 2000, and August 1, 2022; reported empirical research; involved older adults as participants; and addressed health- and behavior-related outcomes or the feasibility and usability of FIVR. We used Endnote X9 to organize the search results and Microsoft Excel for data extraction and synthesis. Results Of the 806 articles collected from the databases and other resources, 11 were identified. Most of the studies involved participants aged between 70 and 90 years. Only 1 study did not involve those with cognitive impairments, whereas 3 specifically targeted people living with dementia. The results indicated that FIVR reminiscence interventions enhanced engagement and reduced fatigue. Although some studies have observed positive effects on anxiety, apathy, depression, cognitive functions, and caregiver burden reduction, these findings were inconsistent across other research. In addition, FIVR showed overall usability and acceptability with manageable side effects among older adults across various health conditions during reminiscence sessions. However, 1 study reported adverse feelings among participants, triggered by unpleasant memories evoked by the virtual reality content. Conclusions The role of FIVR in reminiscence interventions remains nascent, with limited studies evaluating its impacts on older adults. Many of the reviewed studies had notable limitations: small sample sizes, absence of rigorous research design, limited assessment of long-term effects, lack of measures for health and behavior outcomes, and quality of life. Beyond these limitations, this review identified a list of future research directions in 6 categories. On the basis of the review findings, we provide practical recommendations to enhance FIVR reminiscence interventions, covering topics such as virtual reality content, device choice, intervention types, and the role and responsibility of facilitators.

Light localization via reorientation in nematic liquid crystals supports multi-component optical spatial solitons, i.e., vector nematicons. By launching three optical beams of different wavelengths and the same input polarization in a bias-free planar cell, we demonstrate a three-color vector nematicon which is self-trapped thanks to its incoherent nature. Full Text: PDF ReferencesG. I. Stegeman and M. Segev, "Optical Spatial Solitons and Their Interactions: Universality and Diversity", Science 286 (5444), 1518 (1999) CrossRef W. Królikowski and O. Bang, "Solitons in nonlocal nonlinear media: Exact solutions", Phys. Rev. E 63, 016610 (2000) CrossRef D. Suter and T. Blasberg, "Stabilization of transverse solitary waves by a nonlocal response of the nonlinear medium", Phys. Rev. A 48, 4583 (1993) CrossRef G. Assanto and M. Peccianti, "Spatial solitons in nematic liquid crystals", IEEE J. Quantum Electron. 39 (1), 13 (2003). CrossRef G. Assanto and M. Karpierz, "Nematicons: self-localised beams in nematic liquid crystals", Liq. Cryst. 36 (10), 1161 (2009) CrossRef M. Peccianti and G. Assanto, "Nematicons", Phys. Rep. 516, 147 (2012). CrossRef M. Peccianti and G. Assanto, "Incoherent spatial solitary waves in nematic liquid crystals", Opt. Lett. 26 (22), 1791 (2001) CrossRef M. Peccianti and G. Assanto, "Nematic liquid crystals: A suitable medium for self-confinement of coherent and incoherent light", Phys. Rev. E Rap. Commun. 65, 035603 (2002) CrossRef G. Assanto, M. Peccianti, C. Umeton, A. De Luca and I. C. Khoo, "Coherent and Incoherent Spatial Solitons in Bulk Nematic Liquid Crystals", Mol. Cryst. Liq. Cryst. 375, 617 (2002) CrossRef A. Alberucci, M. Peccianti, G. Assanto, A. Dyadyusha and M. Kaczmarek, "Two-Color Vector Solitons In Nonlocal Media", Phys. Rev. Lett. 97, 153903 (2006) CrossRef G. Assanto, N. F. Smyth and A. L. Worthy, "Two-color, nonlocal vector solitary waves with angular momentum in nematic liquid crystals", Phys. Rev. A 78 (1), 013832 (2008) CrossRef G. Assanto, K. Garcia-Reimbert, A. A. Minzoni, N. F. Smyth and A. Worthy, "Lagrange solution for three wavelength solitary wave clusters in nematic liquid crystals", Physica D 240, 1213 (2011) CrossRef G. Assanto, A. A. Minzoni and N. F. Smyth, "Vortex confinement and bending with nonlocal solitons", Opt. Lett. 39 (3), 509 (2014) CrossRef G. Assanto, A. A. Minzoni and N. F. Smyth, "Deflection of nematicon-vortex vector solitons in liquid crystals", Phys. Rev. A 89, 013827 (2014) CrossRef G. Assanto and N. F. Smyth, "Soliton Aided Propagation and Routing of Vortex Beams in Nonlocal Media", J. Las. Opt. Photon. 1, 105 (2014) CrossRef Y. V. Izdebskaya, G. Assanto and W. Krolikowski, "Observation of stable-vector vortex solitons", Opt. Lett. 40 (17), 4182 (2015) CrossRef Y. V. Izdebskaya, W. Krolikowski, N. F. Smyth and G. Assanto, "Vortex stabilization by means of spatial solitons in nonlocal media", J. Opt. 18 (5), 054006 (2016) CrossRef J. F. Henninot, J. Blach and M. Warenghem, "Experimental study of the nonlocality of spatial optical solitons excited in nematic liquid crystal", J. Opt. A 9, 20 (2007) CrossRef Y. V. Izdebskaya, V. G. Shvedov, A. S. Desyatnikov, W. Z. Krolikowski, M. Belic, G. Assanto and Y. S. Kivshar, "Counterpropagating nematicons in bias-free liquid crystals", Opt. Express 18 (4), 3258 (2010) CrossRef N. Karimi, A. Alberucci, M. Virkki, M. Kauranen and G. Assanto, "Phase-front curvature effects on nematicon generation", J. Opt. Soc. Am. B 5 (33), 903 (2016) CrossRef P. G. de Gennes and J. Prost, The Physics of Liquid Crystals, Oxford Science Publications (Clarendon Press, 2nd edition, 1993)I. C. Khoo, Liquid Crystals: Physical Properties and Nonlinear Optical Phenomena (Wiley, New York, 1995)A. Piccardi, M. Trotta, M. Kwasny, A. Alberucci, R. Asquini, M. Karpierz, A. d'Alessandro and G. Assanto, "Trends and trade-offs in nematicon propagation", Appl. Phys. B 104 (4), 805 (2011) CrossRef M. Kwasny, U. A. Laudyn, F. A. Sala, A. Alberucci, M. A. Karpierz and G. Assanto, "Self-guided beams in low-birefringence nematic liquid crystals", Phys. Rev. A 86 (1), 01382 (2012) CrossRef M. Peccianti, A. Fratalocchi and G. Assanto, "Transverse dynamics of nematicons", Opt. Express 12 (26), 6524 (2004) CrossRef C. Conti, M. Peccianti and G. Assanto, "Observation of Optical Spatial Solitons in a Highly Nonlocal Medium", Phys. Rev. Lett. 92 (11), 113902 (2004) CrossRef A. Alberucci, C.-P. Jisha and G. Assanto, "Breather solitons in highly nonlocal media", J. Opt. 18, 125501 (2016) CrossRef

Caching has received much attention as a promising technique to overcome high data rate and stringent latency requirements in the future wireless networks. The premise of caching technique is to prefetch most popular contents closer to end users in local cache of edge nodes, e.g., base station (BS). When a user requests a content that is available in the cache, it can be served directly without being sent from the core network. In this paper, we investigate the performance of hierarchical caching systems, in which both BS and end users are equipped with a storage memory. In particular, we propose a novel cooperative caching scheme that jointly optimizes the content placement at the BS’s and users’ caches. The proposed caching scheme is analytically shown to achieve a larger global caching gain than the reference in both uncoded – and coded caching strategies. Finally, numerical results are presented to demonstrate the effectiveness of our proposed caching algorithm. Keywords Hierarchical caching system, cooperative caching, caching gain, uncoded caching, coded caching References [1] D. Liu, B. Chen, C. Yang, A.F. Molisch, Caching at the Wireless Edge: Design Aspects, Challenges, and Future Directions, IEEE Communications Magazine 54 (2016) 22-28. https://doi.org/10.1109/MCOM.2016.7565183.[2] T.X. Vu, S. Chatzinotas, B. Ottersten, Edge-Caching Wireless Networks: Performance Analysis and Optimization, IEEE Transactions on Wireless Communications 17 (2018) 2827-2839. https://doi.org/10.1109/TWC.2018.2803816.[3] M.A. Maddah-Ali, U. Niesen, Fundamental Limits of Caching, IEEE Transactions on Information Theory 60 (2014) 2856-2867. https://doi.org/10.1109/TIT.2014.2306938.[4] M.A. Maddah-Ali, U. Niesen, Decentralized Coded Caching Attains Order-Optimal Memory-Rate Tradeoff, IEEE/ACM Transactions on Networking 23 (2015) 1029-1040. https://doi.org/10.1109/TNET.2014.2317316.[5] U. Niesen, M.A. Maddah-Ali, Coded Caching with Nonuniform Demands, IEEE Transactions on Information Theory 63 (2017) 1146-1158. https://doi.org/10.1109/TIT.2016.2639522.[6] Q. Yu, M.A. Maddah-Ali, A.S. Avestimehr, The exact rate-memory tradeoff for caching with uncoded prefetching, IEEE Transactions on Information Theory 64 (2018) 1281-1296. https://doi.org/10.1109/TIT.2017.2785237.[7] S.P. Shariatpanahi, H. Shah-Mansouri, B.H. Khalaj, Caching gain in interference-limited wireless networks, IET Communications 9 (2015) 1269-1277. https://doi.org/10.1049/iet-com.2014.0955.[8] N. Naderializadeh, M.A. Maddah-Ali, A.S. Avestimehr, Fundamental limits of cache-aided interference management, IEEE Transactions on Information Theory 63 (2017) 3092-3107. https://doi.org/10.1109/TIT.2017.2669942.[9] J. Hachem, U. Niesen, S. Diggavi, Energy-Efficiency Gains of Caching for Interference Channels, IEEE Communications Letters 22 (2018) 1434-1437. https://doi.org/10.1109/LCOMM.2018.2822694.[10] M.A. Maddah-Ali, U. Niesen, Cache-aided interference channels, IEEE International Symposium on Information Theory ISIT, 2015, pp. 809-813. https://doi.org/10.1109/ISIT.2015.7282567.[11] T.X. Vu, S. Chatzinotas, B. Ottersten, T.Q. Duong, Energy minimization for cache-assisted content delivery networks with wireless backhaul, IEEE Wireless Communications Letters 7 (2018) 332-335. https://doi.org/10.1109/LWC.2017.2776924.[12] S. Li, Q. Yu, M.A. Maddah-Ali, A.S. Avestimehr, Coded distributed computing: Fundamental limits and practical challenges, 50th Asilomar Conference on Signals, Systems and Computers (2016) 509-513. https://doi.org/ 10.1109/ACSSC.2016.7869092.[13] S. Li, M.A. Maddah-Ali, Q. Yu, A.S. Avestimehr, A fundamental tradeoff between computation and communication in distributed computing, IEEE Transactions on Information Theory 64 (2018) 109-128. https://doi.org/10.1109/TIT.2017.2756959.[14] S. Borst, V. Gupta, A. Walid, Distributed caching algorithms for content distribution networks, Proceedings IEEE INFOCOM. (2010) 1-9. https://doi.org/10.1109/INFCOM.2010.5461964.[15] N. Karamchandani, U. Niesen, M.A. Maddah-Ali, SN Diggavi, Hierarchical coded caching, IEEE Transactions on Information Theory 62 (2016) 3212-3229. https://doi.org/10.1109/TIT.2016.2557804.[16] S.P. Shariatpanahi, G. Caire, B. H. Khalaj, Multi-antenna coded caching, IEEE International Symposium on Information Theory ISIT, 2017, pp. 2113-2117. https://doi.org/10.1109/ISIT.2017.8006902.[17] R. Pedarsani, M.A. Maddah-Ali, U. Niesen, Online coded caching, IEEE/ACM Transactions on Networking 24 (2016) 836-845. https://doi.org/10.1109/TNET.2015.2394482.

Chemical compounds (drugs) and diseases are among top searched keywords on the PubMed database of biomedical literature by biomedical researchers all over the world (according to a study in 2009). Working with PubMed is essential for researchers to get insights into drugs’ side effects (chemical-induced disease relations (CDR), which is essential for drug safety and toxicity. It is, however, a catastrophic burden for them as PubMed is a huge database of unstructured texts, growing steadily very fast (~28 millions scientific articles currently, approximately two deposited per minute). As a result, biomedical text mining has been empirically demonstrated its great implications in biomedical research communities. Biomedical text has its own distinct challenging properties, attracting much attetion from natural language processing communities. A large-scale study recently in 2018 showed that incorporating information into indenpendent multiple-input layers outperforms concatenating them into a single input layer (for biLSTM), producing better performance when compared to state-of-the-art CDR classifying models. This paper demonstrates that for a CNN it is vice-versa, in which concatenation is better for CDR classification. To this end, we develop a CNN based model with multiple input concatenated for CDR classification. Experimental results on the benchmark dataset demonstrate its outperformance over other recent state-of-the-art CDR classification models. Keywords: Chemical disease relation prediction, Convolutional neural network, Biomedical text mining References [1] Paul SM, S. Mytelka, C.T. Dunwiddie, C.C. Persinger, B.H. Munos, S.R. Lindborg, A.L. Schacht, How to improve R&D productivity: The pharmaceutical industry's grand challenge, Nat Rev Drug Discov. 9(3) (2010) 203-14. https://doi.org/10.1038/nrd3078. [2] J.A. 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Internet of Things (IoT) applications are increasingly making impact in all areas of humanlife. Day by day, its chatty embedded devices have been generating tons of data requiring effectivenetwork infrastructure. To deliver millions of IoT messages back and fort with as few faults aspossible, participation of communication protocols like MQTT is a must. Lightweight blueprintand friendly battery are just two of many advantages of this protocol making it become a dominantin IoT world. In real application scenarios, distributed MQTT solutions are usually required sincecentralized MQTT approach is incapable of dealing with huge amount of data. Although distributedMQTT solutions are scalable, they do not adapt to fluctuations of traffic workload. This might costIoT service provider because of redundant computation resources. This leads to the need of a novelapproach that can adapt its size changes in workload. This article proposes such an elastic solutionby proposing a flexible MQTT framework. Our MQTT framework uses off-the-shelf componentsto obtain server’s elasticity while keeping IoT applications intact. Experiments are conducted tovalidate elasticity function provided by an implementation of our framework. Keywords MQTT broker, Elasticity, Internet of Things, Cloud computing References [1] Sharma, D. Panwar, Green IoT: Advancements and Sustainability with Environment by 2050. In: 8th International Conference on Reliability, Infocom Technologies and Optimization (Trends and Future Directions) (ICRITO), Noida, India, 2020, pp. 1127-1132. [2] Turner, D. Reinsel, J.F. Gantz, S. Minton, The Digital Universe of Opportunities: Rich Data and the Increasing Value of the Internet of Things, IDC Report Apr, 2014. [3] MQ Telemetry Transport. http://mqtt.org/, 2020 (30 October 2020). [4] Mell, T. Grance, The NIST definition of cloud computing (draft), NIST special publication 800-145 (2011) 1-3. 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ABSTRACTEngineered substrates are expected to play a dominant role in the field of modern nano-electronic and optoelectronic technologies. For example, engineered substrates like SOI (Silicon On Insulator) make possible efficient optimization of transistors' current drive while minimizing the leakage and reducing parasitic elements, thus enhancing the overall IC performance in terms of speed or power consumption. Other generations of engineered substrates like strained SOI (sSOI) provide solutions to traditional scaling for 32 nm node and beyond [1] technologies.The Smart Cutä technology, introduced in the mid 1990's by M. Bruel [2] is a revolutionnary and powerful thin film technology for bringing to industrial maturity engineered substrate solutions. It is a combination of wafer bonding and layer transfer via the use of ion implantation. It allows multiple high quality transfers of thin layers, from a single crystal donor wafer onto another substrate of a different nature, allowing the integration of dissimilar materials. As a consequence, it opens the path to the formation of III-V based engineered substrates by integrating, for example, materials like GaAs [3], InP [4], SiC [5], GaN [6], Germanium [7] ,and Si [8 ]on a silicon, poly SiC, sapphire, ceramic, or metal substrates?In this paper, we will review the current wafer bonding and layer transfer technologies with a special emphasis on the Smart Cut technology applied to compound semiconductors. Beyond SOI, the innovation provided by substrate engineering will be illustrated by the case of Silicon and SiC engineered substrate serving as a platform for GaN and related alloys processing [9,10,11,12] as well as the case of Germanium/Si platform for the growth of GaAs/InP materials, opening the path to Si CMOS and III-V microelectronics/ optoelectronics functions hybrid integration [13, 14]. Recent results obtained in these two focused areas will be presented to emphasize the added functionalities offered by engineered substrates.[1] B. Ghyselen et al., ICSI3 proc., 173 5 (2003)[2] M. Bruel et al., Electron. Lett., vol 31, p. 1201 (1995)[3] E. Jalaguier et al., Electron. Lett., 34(4), 408 (1998)[4] E. Jalaguier et al. Proc. llth Intern. Conf. on InP and Related Materials, Davos, Switzerland, (1999)[5] L. Di Cioccio et al., Mat. Sci. and Eng. B Vol. 46, p. 349 (1997)[6] A. Tauzin and al., Semiconductor Wafer Bonding VIII, ECS Proc Vol. 2005-02, pp. 119-127[7] F. Letertre, et al. MRS Symp. Proc., 809, B4.4 (2004).[8] B. Faure et al., Semiconductor Wafer Bonding VIII, ECS Proc Vol. 2005-02, pp. 106-118[9] H. Larèche et al., Mat. Sci. For., Vols. 457–460 pp.. 1621 – 1624 (2004)[10] G. Meneghesso et al , IEDM 2007, to be published[11] Y. Dikme et al., Journal of Crystal Growth, v.272 (1-4), pp. 500-505 (2004)[12] J. Dorsaz and al., Proceedings, ICNS6 (2005)[13] S.G. Thomas et al., IEEE EDL Vol. 26, July 2005.[14] K. Chilukuri, Semi. Sci. Technol. 22 (2007) 29-34