Journal articles on the topic 'Hydrogen resist'
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Horibe, Hideo, Masashi Yamamoto, Eiji Kusano, Tomokazu Ichikawa, and Seiichi Tagawa. "Resist Removal by using Atomic Hydrogen." Journal of Photopolymer Science and Technology 21, no. 2 (2008): 293–98. http://dx.doi.org/10.2494/photopolymer.21.293.
Full textHoribe, H., M. Yamamoto, T. Maruoka, Y. Goto, A. Kono, I. Nishiyama, and S. Tagawa. "Ion-implanted resist removal using atomic hydrogen." Thin Solid Films 519, no. 14 (May 2011): 4578–81. http://dx.doi.org/10.1016/j.tsf.2011.01.287.
Full textRommel, Marcus, and Jürgen Weis. "Hydrogen silsesquioxane bilayer resists—Combining high resolution electron beam lithography and gentle resist removal." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31, no. 6 (November 2013): 06F102. http://dx.doi.org/10.1116/1.4822136.
Full textTsubouchi, Kazuo, Kazuya Masu, and Keiichi Sasaki. "Area-Selective Aluminum Patterning Using Atomic Hydrogen Resist." Japanese Journal of Applied Physics 32, Part 1, No. 1B (January 30, 1993): 278–81. http://dx.doi.org/10.1143/jjap.32.278.
Full textManfrinato, Vitor R., Lin Lee Cheong, Huigao Duan, Donald Winston, Henry I. Smith, and Karl K. Berggren. "Sub-5keV electron-beam lithography in hydrogen silsesquioxane resist." Microelectronic Engineering 88, no. 10 (October 2011): 3070–74. http://dx.doi.org/10.1016/j.mee.2011.05.024.
Full textWinston, D., B. M. Cord, B. Ming, D. C. Bell, W. F. DiNatale, L. A. Stern, A. E. Vladar, et al. "Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 6 (2009): 2702. http://dx.doi.org/10.1116/1.3250204.
Full textMaruoka, Takeshi, Yousuke Goto, Masashi Yamamoto, Hideo Horibe, Eiji Kusano, Kazuhisa Takao, and Seiichi Tagawa. "Relationship between the Thermal Hardening of Ion-Implanted Resist and the Resist Removal Using Atomic Hydrogen." Journal of Photopolymer Science and Technology 22, no. 3 (2009): 325–28. http://dx.doi.org/10.2494/photopolymer.22.325.
Full textRamjaun, T. I., S. W. Ooi, R. Morana, and H. K. D. H. Bhadeshia. "Designing steel to resist hydrogen embrittlement: Part 1 – trapping capacity." Materials Science and Technology 34, no. 14 (July 13, 2018): 1737–46. http://dx.doi.org/10.1080/02670836.2018.1475919.
Full textOoi, S. W., T. I. Ramjaun, C. Hulme-Smith, R. Morana, M. Drakopoulos, and H. K. D. H. Bhadeshia. "Designing steel to resist hydrogen embrittlement Part 2 – precipitate characterisation." Materials Science and Technology 34, no. 14 (July 13, 2018): 1747–58. http://dx.doi.org/10.1080/02670836.2018.1496536.
Full textKomori, Takuya, Hui Zhang, Takashi Akahane, Zulfakri bin Mohamad, You Yin, and Sumio Hosaka. "Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography." Key Engineering Materials 534 (January 2013): 113–17. http://dx.doi.org/10.4028/www.scientific.net/kem.534.113.
Full textWhitfield, Dennis M., Stephen P. Douglas, Ting-Hua Tang, Imre G. Csizmadia, Henrianna Y. S. Pang, Frederick L. Moolten, and Jiri J. Krepinsky. "Differential reactivity of carbohydrate hydroxyls in glycosylations. II. The likely role of intramolecular hydrogen bonding on glycosylation reactions. Galactosylation of nucleoside 5′-hydroxyls for the syntheses of novel potential anticancer agents." Canadian Journal of Chemistry 72, no. 11 (November 1, 1994): 2225–38. http://dx.doi.org/10.1139/v94-284.
Full textNagai, Tatsuo, Haruyoshi Yamakawa, Minoru Uchida, Toru Otsu, Norihito Ikemiya, and Hiroshi Morita. "Study on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPM." Solid State Phenomena 187 (April 2012): 109–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.109.
Full textNamatsu, H., T. Yamaguchi, M. Nagase, K. Yamazaki, and K. Kurihara. "Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations." Microelectronic Engineering 41-42 (March 1998): 331–34. http://dx.doi.org/10.1016/s0167-9317(98)00076-8.
Full textPascher, Nikola, Szymon Hennel, Susanne Mueller, and Andreas Fuhrer. "Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography." New Journal of Physics 18, no. 8 (July 28, 2016): 083001. http://dx.doi.org/10.1088/1367-2630/18/8/083001.
Full textJin, Niu, Sookyung Choi, Liang Wang, Guang Chen, DongHyun Kim, Vipan Kumar, and Ilesanmi Adesida. "Nanometer-scale gaps in hydrogen silsesquioxane resist for T-gate fabrication." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, no. 6 (2007): 2081. http://dx.doi.org/10.1116/1.2798734.
Full textMitsui, Toshiyuki, Eric Hill, and Eric Ganz. "Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist." Journal of Applied Physics 85, no. 1 (January 1999): 522–24. http://dx.doi.org/10.1063/1.369483.
Full textSaleem, Muhammad Rizwan. "Hydrogen silsesquioxane resist stamp for replication of nanophotonic components in polymers." Journal of Micro/Nanolithography, MEMS, and MOEMS 11, no. 1 (March 2, 2012): 013007. http://dx.doi.org/10.1117/1.jmm.11.1.013007.
Full textDinh, Cong Que, Akihiro Oshima, and Seiichi Tagawa. "Depth Dependence of Time Delay Effect on Hydrogen Silsesquioxane (HSQ) Resist Layers." Journal of Photopolymer Science and Technology 25, no. 1 (2012): 121–24. http://dx.doi.org/10.2494/photopolymer.25.121.
Full textGeorgiev, Y. M., W. Henschel, A. Fuchs, and H. Kurz. "Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist." Vacuum 77, no. 2 (January 2005): 117–23. http://dx.doi.org/10.1016/j.vacuum.2004.07.080.
Full textMatsubara, Yasushi, Jun Taniguchi, and Iwao Miyamoto. "Fabrication of Three-Dimensional Hydrogen Silsesquioxane Resist Structure using Electron Beam Lithography." Japanese Journal of Applied Physics 45, no. 6B (June 20, 2006): 5538–41. http://dx.doi.org/10.1143/jjap.45.5538.
Full textYang, Fan, David K. Taggart, and Reginald M. Penner. "Fast, Sensitive Hydrogen Gas Detection Using Single Palladium Nanowires That Resist Fracture." Nano Letters 9, no. 5 (May 13, 2009): 2177–82. http://dx.doi.org/10.1021/nl9008474.
Full textVila-Comamala, Joan, Sergey Gorelick, Vitaliy A. Guzenko, and Christian David. "3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 6 (November 2011): 06F301. http://dx.doi.org/10.1116/1.3629811.
Full textMasu, Kazuya. "Atomic hydrogen resist process with electron beam lithography for selective Al patterning." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 6 (November 1994): 3270. http://dx.doi.org/10.1116/1.587610.
Full textKato, T., J. Kamijo, T. Nakamura, C. Ohata, S. Katsumoto, and J. Haruyama. "Spin phase protection in interference of electron spin waves in lightly hydrogenated graphene." RSC Advances 6, no. 72 (2016): 67586–91. http://dx.doi.org/10.1039/c6ra11648e.
Full textYamasaki, S., and H. K. D. H. Bhadeshia. "M 4 C 3 precipitation in Fe–C–Mo–V steels and relationship to hydrogen trapping." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 462, no. 2072 (March 8, 2006): 2315–30. http://dx.doi.org/10.1098/rspa.2006.1688.
Full textYang, Joel K. W., Bryan Cord, Huigao Duan, Karl K. Berggren, Joseph Klingfus, Sung-Wook Nam, Ki-Bum Kim, and Michael J. Rooks. "Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 6 (2009): 2622. http://dx.doi.org/10.1116/1.3253652.
Full textSidorkin, Vadim, Emile van der Drift, and Huub Salemink. "Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, no. 6 (November 2008): 2049–53. http://dx.doi.org/10.1116/1.2987965.
Full textvan Delft, Falco C. M. J. M., Jos P. Weterings, Anja K. van Langen-Suurling, and Hans Romijn. "Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 6 (2000): 3419. http://dx.doi.org/10.1116/1.1319682.
Full textJunarsa, Ivan, Mark P. Stoykovich, Paul F. Nealey, Yuansheng Ma, Franco Cerrina, and Harun H. Solak. "Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, no. 1 (2005): 138. http://dx.doi.org/10.1116/1.1849213.
Full textYoshimura, Toshiyuki, Akira Ishikawa, Hiroshi Okamoto, Hiroshi Miyazaki, Akemi Sawada, Takuma Tanimoto, and Shinji Okazaki. "Direct delineation of fine metallic patterns through hydrogen reduction of inorganic resist HPA." Microelectronic Engineering 13, no. 1-4 (March 1991): 97–100. http://dx.doi.org/10.1016/0167-9317(91)90056-j.
Full textvan Kan, J. A., A. A. Bettiol, and F. Watt. "Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20nm level." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 260, no. 1 (July 2007): 396–99. http://dx.doi.org/10.1016/j.nimb.2007.02.051.
Full textJamieson, Andrew. "Low-voltage electron beam lithography resist processes: top surface imaging and hydrogen silisesquioxane bilayer." Journal of Micro/Nanolithography, MEMS, and MOEMS 3, no. 3 (July 1, 2004): 442. http://dx.doi.org/10.1117/1.1758268.
Full textShen, Jiashi, Ferhat Aydinoglu, Mohammad Soltani, and Bo Cui. "E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life." Journal of Vacuum Science & Technology B 37, no. 2 (March 2019): 021601. http://dx.doi.org/10.1116/1.5079657.
Full textWestly, Daron A., Donald M. Tennant, Yukinori Aida, Hirofumi Ohki, and Takashi Ohkubo. "Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 6 (November 2011): 06FJ02. http://dx.doi.org/10.1116/1.3660788.
Full textLee, Hyo-Sung, Jung-Sub Wi, Sung-Wook Nam, Hyun-Mi Kim, and Ki-Bum Kim. "Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 1 (2009): 188. http://dx.doi.org/10.1116/1.3049482.
Full textYoshimura, Toshiyuki, Akira Ishikawa, Hiroshi Okamoto, Hiroshi Miyazaki, Akemi Sawada, Takuma Tanimoto, and Shinji Okazaki. "Direct delineation of fine metallic patterns through hydrogen reduction of the inorganic resist HPA." Microelectronic Engineering 14, no. 3-4 (September 1991): 149–58. http://dx.doi.org/10.1016/0167-9317(91)90001-t.
Full textYin, You, Taichi Itagawa, and Sumio Hosaka. "Electron Beam Lithography for Fabrication of Nanophase-Change Memory." Applied Mechanics and Materials 481 (December 2013): 30–35. http://dx.doi.org/10.4028/www.scientific.net/amm.481.30.
Full textSolard, Jeanne, Mahmoud Chakaroun, and Azzedine Boudrioua. "Optimal design and fabrication of ITO photonic crystal using e-beam patterned hydrogen silsesquioxane resist." Journal of Vacuum Science & Technology B 38, no. 2 (March 2020): 022802. http://dx.doi.org/10.1116/1.5142533.
Full textMitsui, Toshiyuki, Rob Curtis, and Eric Ganz. "Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist." Journal of Applied Physics 86, no. 3 (August 1999): 1676–79. http://dx.doi.org/10.1063/1.370946.
Full textChoi, Sookyung, Minjun Yan, Ilesanmi Adesida, Keng H. Hsu, and Nicholas X. Fang. "Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 6 (2009): 2640. http://dx.doi.org/10.1116/1.3253610.
Full textKüpper, Daniel, David Küpper, Thorsten Wahlbrink, Wolfgang Henschel, Jens Bolten, Max C. Lemme, Yordan M. Georgiev, and Heinrich Kurz. "Impact of supercritical CO[sub 2] drying on roughness of hydrogen silsesquioxane e-beam resist." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, no. 2 (2006): 570. http://dx.doi.org/10.1116/1.2167990.
Full textClark, Nathaniel, Amy Vanderslice, Robert Grove, and Robert R. Krchnavek. "Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, no. 6 (2006): 3073. http://dx.doi.org/10.1116/1.2366697.
Full textLoong, W. A., and M. S. Yen. "Enhanced oxygen plasma stripping of P+-implanted negative resist by hydrogen plasma pretreatment: temperature effects." Electronics Letters 27, no. 12 (1991): 1079. http://dx.doi.org/10.1049/el:19910670.
Full textWang, Fei, Jinsheng Liang, Haifeng Liu, Xinhui Duan, Qingguo Tang, and Huimin Liu. "Preparation and Performance of Inorganic Heat Insulation Panel Based on Sepiolite Nanofibers." Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/876967.
Full textTu, Bo, Yantao Bao, Ming Tang, Qian Zhu, Xiaopeng Lu, Hui Wang, Tianyun Hou, Ying Zhao, Ping Zhang, and Wei-Guo Zhu. "TIP60 recruits SUV39H1 to chromatin to maintain heterochromatin genome stability and resist hydrogen peroxide-induced cytotoxicity." Genome Instability & Disease 1, no. 6 (November 2020): 339–55. http://dx.doi.org/10.1007/s42764-020-00025-8.
Full textYan, M., J. Lee, B. Ofuonye, S. Choi, J. H. Jang, and I. Adesida. "Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 6 (November 2010): C6S23—C6S27. http://dx.doi.org/10.1116/1.3504497.
Full textGnan, M., S. Thoms, D. S. Macintyre, R. M. De La Rue, and M. Sorel. "Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist." Electronics Letters 44, no. 2 (2008): 115. http://dx.doi.org/10.1049/el:20082985.
Full textChoi, Sookyung, Niu Jin, Vipan Kumar, Ilesanmi Adesida, and Mark Shannon. "Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, no. 6 (2007): 2085. http://dx.doi.org/10.1116/1.2794315.
Full textCrane, E., A. Kölker, T. Z. Stock, N. Stavrias, K. Saeedi, M. A. W. van Loon, B. N. Murdin, and N. J. Curson. "Hydrogen resist lithography and electron beam lithography for fabricating silicon targets for studying donor orbital states." Journal of Physics: Conference Series 1079 (August 2018): 012010. http://dx.doi.org/10.1088/1742-6596/1079/1/012010.
Full textHenschel, W., Y. M. Georgiev, and H. Kurz. "Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 5 (2003): 2018. http://dx.doi.org/10.1116/1.1603284.
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