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Journal articles on the topic 'Hydrogen passivation'

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Published: 4 June 2021

Last updated: 9 February 2022

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1

Jones, K. M., M. M. Al-Jassim, and B. L. Soport. "TEM investigation of hydrogen-implanted polycrystalline Si." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 868–69. http://dx.doi.org/10.1017/s0424820100088658.

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Hydrogen implantation for passivating grain boundaries and dislocations in polycrystalline silicon solar cells was studied by TEM and HREM. Back-surface passivation is being investigated because studies have shown that front-side passivation causes serious surface damage with resultant surface recombination velocities as high as 7 x 107 cm/sec. Front-side hydrogenation also restricts solar cell fabrication processes. Since the passivation of defects must occur within the entire volume of the cell, particular emphasis was placed on the depth distribution of hydrogen. The hydrogen implantation was carried out In a Kaufman ion beam system using a beam energy of 0.5-1.5 keV and a beam current of 55 mA for 15 minutes.

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2

Stavola, M. "Hydrogen Passivation in Semiconductors." Acta Physica Polonica A 82, no. 4 (October 1992): 585–98. http://dx.doi.org/10.12693/aphyspola.82.585.

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3

Bourret‐Sicotte, Gabrielle, Phillip Hamer, Ruy S. Bonilla, Katherine Collett, Alison Ciesla, Jack Colwell, and Peter R. Wilshaw. "Shielded hydrogen passivation − A potential in‐line passivation process." physica status solidi (a) 214, no. 7 (June 28, 2017): 1700383. http://dx.doi.org/10.1002/pssa.201700383.

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4

Ionescu, Mihail, Bryce Richards, Keith McIntosh, R. Siegele, E. Stelcer, D. D. Cohen, and Tara Chandra. "Hydrogen Measurements in SiN_x: H/Si Thin Films by ERDA." Materials Science Forum 539-543 (March 2007): 3551–56. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.3551.

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Thin SiN film deposited on Si by plasma enhanced chemical vapour deposition (PECVD) is used for surface passivation of Si. During the PECVD process Hydrogen is incorporated into the SiN film, and the passivation properties of the resulting SiNx:H layers play an important role in enhancing the energy conversion efficiency of solar cells. It is believed that the Hydrogen present in SiNx:H is responsible for this enhancement, and therefore its concentration in the passivating layer is an important parameter. The Hydrogen composition and its depth profile in thin SiNx:H films of 20nm to 200nm was measured by elastic recoil detection analysis (ERDA), using a 1.7MeV He+ ion beam of (1x2)mm2, generated by a high stability 2MV Tandetron ion beam accelerator. Simultaneously, Rutherford backscattering (RBS) spectra were recorded for each sample. The results show that the Hydrogen concentration in the SiNx:H layers is dependent of the deposition conditions. Also, Hydrogen was found to be homogenously distributed across the SiNx:H layer thickness, and the SiNx:H/Si interfaces were well defined.

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5

Song, Lihui, Ly Mai, and Stuart Wenham. "Laser induced localised hydrogen passivation." Solar Energy 122 (December 2015): 341–46. http://dx.doi.org/10.1016/j.solener.2015.09.012.

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6

Zheng, Chuanbo, Jiayan Huang, and Gua Yi. "Effect of hydrogen on semiconductor properties and pitting initiation of 2205 duplex stainless steel passivation film." Anti-Corrosion Methods and Materials 67, no. 3 (April 16, 2020): 313–20. http://dx.doi.org/10.1108/acmm-11-2019-2220.

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Purpose This paper aims to study the effect of current density of hydrogen charging on the semiconductor properties and pitting initiation of 2205 duplex stainless steel (DSS) passivation film. Design/methodology/approach In this work, the 2205 DSS is pre-hydrogenated and passivated. Then, the passivation film is tested by electrochemical impedance method, Mott–Schottky curve method and dynamic potential scanning method. The influences of hydrogen on the properties of the passivation film and the corrosion behavior of the matrix were studied by analyzing the curves obtained in the electrochemical test. The surface of the passivation film after pre-hydrogenation and anodic polarization was observed by using the ultra-depth three-dimensional microscopy and the scanning electron microscope. The integrity, density and corrosion morphology of the passivation film were studied and discussed. Findings With the increase of the hydrogen current density, the growth of the passivation film is hindered, the concentrations of donor and acceptor in the film are increased, the conductivity of the passivation film increases. In the anodic polarization, the dimensional passive current density increases with the increase of the hydrogen current density, and the pitting potential is reversed, the more likely the sample is pitting. In general, hydrogen hinders the formation of the passive film on duplex stainless steel, which increases the concentration of point defects in the passive film. Finally, the passive film is easy to crack and pitting. Originality/value The performance of passive film is an important condition to influence the corrosion behavior of stainless steel. However, little research has been done on the effects of hydrogen on the electrochemistry and pitting sensitivity of 2205 DSS passivation films. The effect of hydrogen on semiconductor properties and pitting initiation of 2205 DSS passivation film is needed to be investigated.

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7

Cai, Wei, Li Li, Ren Hui Liu, and Zhen Zhen Wan. "Passivator Composition of Rich of Phytic Acid Used for Brass-Strip." Advanced Materials Research 399-401 (November 2011): 36–39. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.36.

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Passivator components of phytic acid, hydrogen peroxide, boric acid and polyethylene glycol was optimized by orthogonal experiment. Corrosion resistance of passivation film of brass-strip was invertigated by salt spraying, weight loss and electrochemical test. The results show that the optimization passivator consists of phytic acid (50% mass fraction) 8ml/L, hydrogen peroxide (mass fraction 30%) 30ml/L, boric acid 5g/L, polyethylene glycol 15ml/L and additive 4g/L. Corrosion current density and corrosion rate of the brass-strip specimens coated by rich-phytic acid passivator are similar to that treated by traditional sodium dichromate passivator, the characteristic of anti-tarnish slightly better than that coated by sodium dichromate passivator. The feature of rich-phytic acid passivator is environmental protection.

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8

Hyun, Ji Yeon, Soohyun Bae, Yoon Chung Nam, Dongkyun Kang, Sang-Won Lee, Donghwan Kim, Jooyoung Park, Yoonmook Kang, and Hae-Seok Lee. "Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells." Sustainability 11, no. 14 (July 10, 2019): 3784. http://dx.doi.org/10.3390/su11143784.

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Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.

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9

Alvarez Jr, Dan, Jeffrey J. Spiegelman, Andrew C. Kummel, Mary Edmonds, Kasra Sardashti, Steven Wolf, and Russell Holmes. "Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas." Solid State Phenomena 255 (September 2016): 31–35. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.31.

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In Situ gas phase passivation methods can enable new channel materials. Toward this end pure anhydrous HOOH and H2NNH2 membrane gas delivery methods were developed. Implementation led to Si-OH passivation of InGaAs(001) at 350C and Si-N-H passivation of SiGe(110) at 285C. XPS and initial electrical characterization has been carried out. Feasibility for In Situ dry surface preparation and passivation was demonstrated.

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10

Hallam, Brett J., Alison M. Ciesla, Catherine C. Chan, Anastasia Soeriyadi, Shaoyang Liu, Arman Mahboubi Soufiani, Matthew Wright, and Stuart Wenham. "Overcoming the Challenges of Hydrogenation in Silicon Solar Cells." Australian Journal of Chemistry 71, no. 10 (2018): 743. http://dx.doi.org/10.1071/ch18271.

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The challenges of passivating defects in silicon solar cells using hydrogen atoms are discussed. Atomic hydrogen is naturally incorporated into conventional silicon solar cells through the deposition of hydrogen-containing dielectric layers and the metallisation firing process. The firing process can readily passivate certain structural defects such as grain boundaries. However, the standard hydrogenation processes are ineffective at passivating numerous defects in silicon solar cells. This difficulty can be attributed to the atomic hydrogen naturally occupying low-mobility and low-reactivity charge states, or the thermal dissociation of hydrogen–defect complexes. The concentration of the highly mobile and reactive neutral-charge state of atomic hydrogen can be enhanced using excess carriers generated by light. Additional low-temperature hydrogenation processes implemented after the conventional fast-firing hydrogenation process are shown to improve the passivation of difficult structural defects. For process-induced defects, careful attention must be paid to the process sequence to ensure that a hydrogenation process is included after the defects are introduced into the device. Defects such as oxygen precipitates that form during high-temperature diffusion and oxidation processes can be passivated during the subsequent dielectric deposition and high-temperature firing process. However, for laser-based processes performed after firing, an additional hydrogenation process should be included after the introduction of the defects. Carrier-induced defects are even more challenging to passivate, and advanced hydrogenation methods incorporating minority carrier injection must be used to induce defect formation first, and, second, provide charge state manipulation to enable passivation. Doing so can increase the performance of industrial p-type Czochralski solar cells by 1.1 % absolute when using a new commercially available laser-based advanced hydrogenation tool.

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11

Mukashev, B. N., and S. Z. Tokmoldin. "Hydrogen States and Passivation in Silicon." Materials Science Forum 196-201 (November 1995): 843–48. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.843.

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12

Gali, A., P. Deák, N. T. Son, and E. Janzén. "Hydrogen passivation of nitrogen in SiC." Applied Physics Letters 83, no. 7 (August 18, 2003): 1385–87. http://dx.doi.org/10.1063/1.1604461.

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13

Choi, Minseok, Anderson Janotti, and Chris G. Van de Walle. "Hydrogen Passivation of Impurities in Al2O3." ACS Applied Materials & Interfaces 6, no. 6 (March 10, 2014): 4149–53. http://dx.doi.org/10.1021/am4057997.

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14

Dautremont‐Smith, W. C., J. Lopata, S. J. Pearton, L. A. Koszi, M. Stavola, and V. Swaminathan. "Hydrogen passivation of acceptors inp‐InP." Journal of Applied Physics 66, no. 5 (September 1989): 1993–96. http://dx.doi.org/10.1063/1.344508.

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15

Baranowski, J. M., and J. Tatarkiewicz. "Hydrogen in InP-Bonding and Passivation." Acta Physica Polonica A 79, no. 2-3 (February 1991): 263–65. http://dx.doi.org/10.12693/aphyspola.79.263.

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16

Aouida, S., R. Benabderrahmane Zaghouani, N. Bachtouli, and B. Bessais. "Hydrogen passivation of silicon nanowire structures." Applied Surface Science 370 (May 2016): 49–52. http://dx.doi.org/10.1016/j.apsusc.2016.02.116.

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17

Divigalpitiya, W. M. Ranjith, S. Roy Morrison, G. Vercruysse, A. Praet, and W. P. Gomes. "Hydrogen passivation of dislocations in silicon." Solar Energy Materials 15, no. 2 (February 1987): 141–51. http://dx.doi.org/10.1016/0165-1633(87)90089-x.

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18

Asom, M. T., V. Swaminathan, G. Livescu, M. Geva, L. C. Luther, R. E. Leibenguth, V. D. Mattera, and T. Hayes. "Hydrogen passivation of delta doped GaAs." Journal of Crystal Growth 111, no. 1-4 (May 1991): 260–63. http://dx.doi.org/10.1016/0022-0248(91)90981-a.

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19

Hahn, Giso, Martin Käs, and Bernhard Herzog. "Hydrogenation in Crystalline Silicon Materials for Photovoltaic Application." Solid State Phenomena 156-158 (October 2009): 343–49. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.343.

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In this contribution an overview of hydrogenation issues for (multi-)crystalline silicon material is given. Crystalline silicon material for photovoltaic application contains more defects than material used for other semiconductor device fabrication. Therefore passivation of bulk defects has to be performed to reach higher efficiencies and exploit the cost reduction potential of these materials. Especially minority charge carrier lifetimes of ribbon silicon can be drastically improved by hydrogenation in combination with a gettering step. Apart from bulk passivation atomic hydrogen plays an important role in surface passivation via dielectric layers. Performance of single dielectric layers or stack systems can be increased after a hydrogenation step. It is believed that hydrogen can passivate defects at the silicon/dielectric interface allowing for lower surface recombination velocities. In industrial application hydrogenation is performed via deposition of a hydrogen-rich PECVD SiNx layer followed by a belt furnace annealing step. Surface passivation for characterization of charge carrier bulk lifetime is often performed with the same technique, omitting the annealing step to avoid in-diffusion of hydrogen. It is shown that for some crystalline silicon materials even the PECVD SiNx deposition alone (without annealing step) can cause significant bulk defect passivation, which in this case causes an unwanted change of bulk lifetime.

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20

Xiang, Yu Ren, Chun Lan Zhou, and Wen Jing Wang. "The Effect of Substrate Surface Condition on Atomic Layer Deposited Alumina Passivation Films." Key Engineering Materials 703 (August 2016): 230–34. http://dx.doi.org/10.4028/www.scientific.net/kem.703.230.

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Aluminum oxide (Al2O3) films have been wildly investigated due to the excellent surface passivation for the electrical device. Both hydrogen-terminated and pre-oxidized silicon surfaces were prepared before Al2O3 films deposition. Combining chemical environment analysis with the effective minority lifetime data, the effect of the surface conditions on the Al2O3 films passivation was discussed. The HF sample with hydrogen-terminated substrate surface had a higher minority carrier lifetime (about 721 μs) than the H2SO4+H2O2 sample with pre-oxidized substrate surface (about 631 μs). The H atoms played an important role in improving the passivation effect. And the importance of the interfacial oxide layer to Al2O3 films passivation was validated too.

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21

NICKEL, N. H., W. B. JACKSON, and N. M. JOHNSON. "DEFECT METASTABILITY IN HYDROGEN PASSIVATED POLYCRYSTALLINE SILICON." Modern Physics Letters B 08, no. 26 (November 10, 1994): 1627–42. http://dx.doi.org/10.1142/s0217984994001576.

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A comprehensive review is presented for the defect passivation and the light-induced metastability in fine grain polycrystalline silicon (poly-Si). The passivation kinetics of grain boundary defects were examined by electron spin resonance and secondary ion mass spectrometry measurements. The spin density decreases to a residual value which strongly depends on the passivation temperature and a further low-temperature anneal reduces the spin density to N S =2.2×1016 cm −3. Illumination with white light produces additional dangling bond defects which are metastable and can be removed by an anneal at moderate temperatures. The light-induced degradation decreases with repeated illumination and annealing cycles and is restored upon re-exposure to monatomic H. Our results provide the strongest evidence to date that hydrogen is responsible for the metastability in both poly-Si:H and hydrogenated amorphous silicon.

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22

Anas, Muhammad Mus-'ab, and Geri Gopir. "Surface Passivation Effect of Hydrogen and Methyl on the Structural and Electronic Properties of Silicon Quantum Dots: Density Functional Calculation." Materials Science Forum 846 (March 2016): 375–82. http://dx.doi.org/10.4028/www.scientific.net/msf.846.375.

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We have carried out a series of DFT calculations to investigate changes on the structural and electronic properties of Silicon (Si) quantum dots as a function of surface passivation. In particular, we have study non-polar passivation effect of hydrogen (H) and methyl (CH3) at the surface of quantum dots. From geometry optimization result, we find that clusters with reconstructed surfaces a complete methyl passivation is possible and steric repulsion prevents full passivation of Si dots with unreconstructed surfaces. On the electronic properties point of view, it is noticed for small nanocrystals, the presence of mini-gaps are more pronounced which can limit the non-radiative relaxation of excitons. Obviously, methyl passivation weakly affects the band gap values of silicon quantum dots, while it substantially decreases the band gap and reduce mini-gap appearance compared to hydrogen passivation Si QDs. On the basis of our results we propose that methyl terminated quantum dots may be size selected taking advantage of the reduction on mini-gap and the localization of electron as a function of the cluster size.

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23

Martynov, Yu V., I. S. Zevenbergen, T. Gregorkiewicz, and C. A. J. Ammerlaan. "Hydrogen Passivation of Double Donors in Silicon." Solid State Phenomena 47-48 (July 1995): 267–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.267.

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24

Bhunia, S., D. Pal, and D. N. Bose. "Photoluminescence Study of Hydrogen Passivation of ZnTe." Solid State Phenomena 55 (August 1997): 47–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.55.47.

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25

Castaldini, A., D. Cavalcoli, A. Cavallini, and E. Susi. "Hydrogen-induced boron passivation in Cz Si." Applied Physics A: Materials Science & Processing 75, no. 5 (November 1, 2002): 601–5. http://dx.doi.org/10.1007/s003390101067.

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26

Lüdemann, Ralf. "Hydrogen passivation of multicrystalline silicon solar cells." Materials Science and Engineering: B 58, no. 1-2 (February 1999): 86–90. http://dx.doi.org/10.1016/s0921-5107(98)00288-8.

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27

Lee, J. W., S. J. Pearton, J. C. Zolper, and R. A. Stall. "Hydrogen passivation of Ca acceptors in GaN." Applied Physics Letters 68, no. 15 (April 8, 1996): 2102–4. http://dx.doi.org/10.1063/1.115598.

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28

Herman, J. S., and F. L. Terry. "Hydrogen sulfide plasma passivation of gallium arsenide." Applied Physics Letters 60, no. 6 (February 10, 1992): 716–17. http://dx.doi.org/10.1063/1.106547.

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29

Leonard, S., V. P. Markevich, A. R. Peaker, and B. Hamilton. "Passivation of titanium by hydrogen in silicon." Applied Physics Letters 103, no. 13 (September 23, 2013): 132103. http://dx.doi.org/10.1063/1.4822329.

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30

Stutzmann, M., and C. P. Herrero. "Hydrogen Passivation of Shallow Acceptors in Silicon." Physica Scripta T25 (January 1, 1989): 276–82. http://dx.doi.org/10.1088/0031-8949/1989/t25/050.

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31

Gorbylev, V. A., A. A. Chelniy, A. Y. Polyakov, S. J. Pearton, N. B. Smirnov, R. G. Wilson, A. G. Milnes, et al. "Hydrogen passivation effects in InGaAlP and InGaP." Journal of Applied Physics 76, no. 11 (December 1994): 7390–98. http://dx.doi.org/10.1063/1.357964.

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32

Song, Lihui, Alison Wenham, Sisi Wang, Phillip Hamer, Mohammad Shakil Ahmmed, Brett Hallam, Ly Mai, et al. "Laser Enhanced Hydrogen Passivation of Silicon Wafers." International Journal of Photoenergy 2015 (2015): 1–13. http://dx.doi.org/10.1155/2015/193892.

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The application of lasers to enable advanced hydrogenation processes with charge state control is explored. Localised hydrogenation is realised through the use of lasers to achieve localised illumination and heating of the silicon material and hence spatially control the hydrogenation process. Improvements in minority carrier lifetime are confirmed in the laser hydrogenated regions using photoluminescence (PL) imaging. However with inappropriate laser settings a localised reduction in minority carrier lifetime can result. It is observed that high illumination intensities and rapid cooling are beneficial for achieving improvements in minority carrier lifetimes through laser hydrogenation. The laser hydrogenation process is then applied to finished screen-printed solar cells fabricated on seeded-cast quasi monocrystalline silicon wafers. The passivation of dislocation clusters is observed with clear improvements in quantum efficiency, open circuit voltage, and short circuit current density, leading to an improvement in efficiency of 0.6% absolute.

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33

Da Silva, E. C. F., L. V. C. Assali, and J. R. Leite. "Hydrogen passivation of shallow donors in silicon." International Journal of Quantum Chemistry 36, S23 (June 19, 2009): 693–99. http://dx.doi.org/10.1002/qua.560360871.

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34

Burchard, A., Manfred Deicher, Doris Forkel-Wirth, Eugene E. Haller, R. Magerle, A. Prospero, A. Stötzler, and the ISOLDE Collaboration. "Implantation Doping and Hydrogen Passivation of GaN." Materials Science Forum 258-263 (December 1997): 1099–104. http://dx.doi.org/10.4028/www.scientific.net/msf.258-263.1099.

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35

Sveinbjörnsson, EinarÖ, and Olof Engström. "Hydrogen passivation of gold centers in silicon." Materials Science and Engineering: B 36, no. 1-3 (January 1996): 192–95. http://dx.doi.org/10.1016/0921-5107(95)01279-6.

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36

Amore Bonapasta, A. "Hydrogen passivation of carbon-doped gallium arsenide." Physical Review B 48, no. 12 (September 15, 1993): 8771–79. http://dx.doi.org/10.1103/physrevb.48.8771.

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37

Pearton, S. J., C. R. Abernathy, and F. Ren. "Electrical passivation in hydrogen plasma exposed GaN." Electronics Letters 30, no. 6 (March 17, 1994): 527–28. http://dx.doi.org/10.1049/el:19940327.

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38

Scheller, L. P., M. Weizman, P. Simon, M. Fehr, and N. H. Nickel. "Hydrogen passivation of polycrystalline silicon thin films." Journal of Applied Physics 112, no. 6 (September 15, 2012): 063711. http://dx.doi.org/10.1063/1.4752268.

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39

Theys, B., F. Gendron, C. Porte, E. Bringuier, and C. Dolin. "Hydrogen passivation of nitrogen in 6H–SiC." Journal of Applied Physics 82, no. 12 (December 15, 1997): 6346–47. http://dx.doi.org/10.1063/1.366525.

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40

Batra, S., K. Park, S. Banerjee, D. Kwong, A. Tasch, M. Rodder, and R. Sundaresan. "Rapid thermal hydrogen passivation of polysilicon MOSFETs." IEEE Electron Device Letters 11, no. 5 (May 1990): 194–96. http://dx.doi.org/10.1109/55.55247.

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41

Pietruszko, Stanislaw M., Mariusz Pachocki, and Jing Jang. "Hydrogen passivation of dopants in amorphous silicon." Journal of Non-Crystalline Solids 198-200 (May 1996): 73–76. http://dx.doi.org/10.1016/0022-3093(95)00661-3.

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42

Herman, J. S., and F. L. Terry. "Hydrogen sulfide plasma passivation of indium phosphide." Journal of Electronic Materials 22, no. 1 (January 1993): 119–24. http://dx.doi.org/10.1007/bf02665733.

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43

Polzin, Jana-Isabelle, Benjamin Hammann, Tim Niewelt, Wolfram Kwapil, Martin Hermle, and Frank Feldmann. "Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts." Solar Energy Materials and Solar Cells 230 (September 2021): 111267. http://dx.doi.org/10.1016/j.solmat.2021.111267.

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44

Schubert, Martin C., Holger Habenicht, Michael J. Kerler, and Wilhelm Warta. "Quantitative Iron Concentration Imaging." Solid State Phenomena 156-158 (October 2009): 407–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.407.

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Iron concentration imaging has been proven to be a very valuable analysis technique for silicon material characterization. We applied this method to determine the influence of a low temperature annealing after surface passivation on the interstitial iron concentration. The influence of hydrogen passivation induced by silicon nitride passivation is estimated by comparison of silicon nitride and aluminum oxide passivation. The second part of this work deals with systematic errors inherent to the iron concentration technique. Simulations show under which conditions errors occur due to the non-uniformity of carrier profiles.

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45

Dai, Jianhong, and Yan Song. "First principles calculations on the hydrogen atom passivation of TiO2 nanotubes." RSC Advances 6, no. 23 (2016): 19190–98. http://dx.doi.org/10.1039/c6ra00235h.

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46

Bourret-Sicotte, Gabrielle, Phillip Hamer, Ruy S. Bonilla, Katherine Collett, and Peter R. Wilshaw. "Shielded hydrogen passivation – a novel method for introducing hydrogen into silicon." Energy Procedia 124 (September 2017): 267–74. http://dx.doi.org/10.1016/j.egypro.2017.09.298.

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47

Nickel, N. H. "Hydrogen-Induced Passivation of Grain-Boundary Defects in Polycrystalline Silicon." Solid State Phenomena 156-158 (October 2009): 351–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.351.

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The influence of the hydrogen content in the amorphous starting material on hydrogen bonding and defect passivation in laser annealed polycrystalline silicon is investigated. The samples are characterized using electron paramagnetic resonance and hydrogen effusion measurements. After laser dehydrogenation and crystallization the samples contain a residual H concentration of up to 8×1021 cm-3. During a vacuum anneal at least 1.5×1021 cm-3 are mobile of which only 3.7×1018 cm-3 H atoms passivate preexisting Si dangling bonds. It is shown that a vacuum anneal can cause the vast majority of H atoms to accumulate in platelet-like structures. Defect passivation and platelet nucleation and growth occur spatially separated requiring long range H diffusion.

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48

Pap, Andrea E., Csaba Dücső, Katalin Kamarás, Gábor Battistig, and István Bársony. "Heavy Water in Gate Stack Processing." Materials Science Forum 573-574 (March 2008): 119–31. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.119.

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The high reactivity of the free silicon surface and its consequence: the “omnipresent” native silicon dioxide hinders the interface engineering in many processing steps of IC technology on atomic level. Methods known to eliminate the native oxide need in most cases vacuum processing. They frequently deteriorate the atomic flatness of the silicon. Hydrogen passivation by a proper DHF (diluted HF) treatment removes the native silicon oxide without roughening the surface while simultaneously maintains a “quasi oxide free” surface in a neutral or vacuum ambient for short time. Under such circumstances the last thermal desorption peak of hydrogen is activated at around 480-500°C where the free silicon surface suddenly becomes extremely reactive. In this study we show that deuterium passivation is a promising technology. Due to the fact that deuterium adsorbs more strongly on Si surface than hydrogen even at room temperature, deuterium passivation does not need vacuum processing and it ensures a robust process flow.

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Ghoshal, S. K., K. P. Jain, and R. Elliott. "Optical and Electron Correlation Effects in Silicon Quantum Dots." Journal of Metastable and Nanocrystalline Materials 23 (January 2005): 129–32. http://dx.doi.org/10.4028/www.scientific.net/jmnm.23.129.

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We study (through computer simulation) the variation of the band gap as a function of sizes and shapes of small Silicon (Si) dots using pseudo-potential approach. We have used empirical pseudo-potential Hamiltonian and a plane wave basis expansion and a basic tetrahedral structure. It is found that the gap decreases for increasing dot size. Furthermore, the band gap increases as much as 0.13eV on passivation the surface of the dot with hydrogen. So both quantum confinement and surface passivation determine the optical and electronic properties of Si quantum dots. Visible luminescence is probably due to radiative recombination of electrons and holes in the quantum confined nanostructures. The effect of passivation of the surface dangling bonds by hydrogen atoms and the role of surface states on the gap energy as well as on the HOMO-LUMO states has also been examined. We have investigated the entire energy spectrum starting from the very low lying ground state to the very high lying excited states for silicon dots having 5, 18, 17 and 18 atoms. The results for the size dependence of the HOMO-LUMO gap and the wave functions for the bonding-antibonding states are presented and the importance of the confinement and the role of hydrogen passivation on the confinement are also discussed.

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Ge, Jia, Muzhi Tang, Johnson Wong, Zhenhao Zhang, Torsten Dippell, Manfred Doerr, Oliver Hohn, et al. "Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide." International Journal of Photoenergy 2014 (2014): 1–12. http://dx.doi.org/10.1155/2014/752967.

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We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planarn-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1and an implied open-circuit voltage (Voc) of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

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