Relevant bibliographies by topics / Hydrogen passivation

Academic literature on the topic 'Hydrogen passivation'

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Published: 4 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Hydrogen passivation"

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Jones, K. M., M. M. Al-Jassim, and B. L. Soport. "TEM investigation of hydrogen-implanted polycrystalline Si." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 868–69. http://dx.doi.org/10.1017/s0424820100088658.

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Hydrogen implantation for passivating grain boundaries and dislocations in polycrystalline silicon solar cells was studied by TEM and HREM. Back-surface passivation is being investigated because studies have shown that front-side passivation causes serious surface damage with resultant surface recombination velocities as high as 7 x 107 cm/sec. Front-side hydrogenation also restricts solar cell fabrication processes. Since the passivation of defects must occur within the entire volume of the cell, particular emphasis was placed on the depth distribution of hydrogen. The hydrogen implantation was carried out In a Kaufman ion beam system using a beam energy of 0.5-1.5 keV and a beam current of 55 mA for 15 minutes.
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Stavola, M. "Hydrogen Passivation in Semiconductors." Acta Physica Polonica A 82, no. 4 (October 1992): 585–98. http://dx.doi.org/10.12693/aphyspola.82.585.

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Bourret‐Sicotte, Gabrielle, Phillip Hamer, Ruy S. Bonilla, Katherine Collett, Alison Ciesla, Jack Colwell, and Peter R. Wilshaw. "Shielded hydrogen passivation − A potential in‐line passivation process." physica status solidi (a) 214, no. 7 (June 28, 2017): 1700383. http://dx.doi.org/10.1002/pssa.201700383.

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Ionescu, Mihail, Bryce Richards, Keith McIntosh, R. Siegele, E. Stelcer, D. D. Cohen, and Tara Chandra. "Hydrogen Measurements in SiNx: H/Si Thin Films by ERDA." Materials Science Forum 539-543 (March 2007): 3551–56. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.3551.

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Thin SiN film deposited on Si by plasma enhanced chemical vapour deposition (PECVD) is used for surface passivation of Si. During the PECVD process Hydrogen is incorporated into the SiN film, and the passivation properties of the resulting SiNx:H layers play an important role in enhancing the energy conversion efficiency of solar cells. It is believed that the Hydrogen present in SiNx:H is responsible for this enhancement, and therefore its concentration in the passivating layer is an important parameter. The Hydrogen composition and its depth profile in thin SiNx:H films of 20nm to 200nm was measured by elastic recoil detection analysis (ERDA), using a 1.7MeV He+ ion beam of (1x2)mm2, generated by a high stability 2MV Tandetron ion beam accelerator. Simultaneously, Rutherford backscattering (RBS) spectra were recorded for each sample. The results show that the Hydrogen concentration in the SiNx:H layers is dependent of the deposition conditions. Also, Hydrogen was found to be homogenously distributed across the SiNx:H layer thickness, and the SiNx:H/Si interfaces were well defined.
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Song, Lihui, Ly Mai, and Stuart Wenham. "Laser induced localised hydrogen passivation." Solar Energy 122 (December 2015): 341–46. http://dx.doi.org/10.1016/j.solener.2015.09.012.

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Zheng, Chuanbo, Jiayan Huang, and Gua Yi. "Effect of hydrogen on semiconductor properties and pitting initiation of 2205 duplex stainless steel passivation film." Anti-Corrosion Methods and Materials 67, no. 3 (April 16, 2020): 313–20. http://dx.doi.org/10.1108/acmm-11-2019-2220.

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Purpose This paper aims to study the effect of current density of hydrogen charging on the semiconductor properties and pitting initiation of 2205 duplex stainless steel (DSS) passivation film. Design/methodology/approach In this work, the 2205 DSS is pre-hydrogenated and passivated. Then, the passivation film is tested by electrochemical impedance method, Mott–Schottky curve method and dynamic potential scanning method. The influences of hydrogen on the properties of the passivation film and the corrosion behavior of the matrix were studied by analyzing the curves obtained in the electrochemical test. The surface of the passivation film after pre-hydrogenation and anodic polarization was observed by using the ultra-depth three-dimensional microscopy and the scanning electron microscope. The integrity, density and corrosion morphology of the passivation film were studied and discussed. Findings With the increase of the hydrogen current density, the growth of the passivation film is hindered, the concentrations of donor and acceptor in the film are increased, the conductivity of the passivation film increases. In the anodic polarization, the dimensional passive current density increases with the increase of the hydrogen current density, and the pitting potential is reversed, the more likely the sample is pitting. In general, hydrogen hinders the formation of the passive film on duplex stainless steel, which increases the concentration of point defects in the passive film. Finally, the passive film is easy to crack and pitting. Originality/value The performance of passive film is an important condition to influence the corrosion behavior of stainless steel. However, little research has been done on the effects of hydrogen on the electrochemistry and pitting sensitivity of 2205 DSS passivation films. The effect of hydrogen on semiconductor properties and pitting initiation of 2205 DSS passivation film is needed to be investigated.
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Cai, Wei, Li Li, Ren Hui Liu, and Zhen Zhen Wan. "Passivator Composition of Rich of Phytic Acid Used for Brass-Strip." Advanced Materials Research 399-401 (November 2011): 36–39. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.36.

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Passivator components of phytic acid, hydrogen peroxide, boric acid and polyethylene glycol was optimized by orthogonal experiment. Corrosion resistance of passivation film of brass-strip was invertigated by salt spraying, weight loss and electrochemical test. The results show that the optimization passivator consists of phytic acid (50% mass fraction) 8ml/L, hydrogen peroxide (mass fraction 30%) 30ml/L, boric acid 5g/L, polyethylene glycol 15ml/L and additive 4g/L. Corrosion current density and corrosion rate of the brass-strip specimens coated by rich-phytic acid passivator are similar to that treated by traditional sodium dichromate passivator, the characteristic of anti-tarnish slightly better than that coated by sodium dichromate passivator. The feature of rich-phytic acid passivator is environmental protection.
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Hyun, Ji Yeon, Soohyun Bae, Yoon Chung Nam, Dongkyun Kang, Sang-Won Lee, Donghwan Kim, Jooyoung Park, Yoonmook Kang, and Hae-Seok Lee. "Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells." Sustainability 11, no. 14 (July 10, 2019): 3784. http://dx.doi.org/10.3390/su11143784.

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Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.
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Alvarez Jr, Dan, Jeffrey J. Spiegelman, Andrew C. Kummel, Mary Edmonds, Kasra Sardashti, Steven Wolf, and Russell Holmes. "Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas." Solid State Phenomena 255 (September 2016): 31–35. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.31.

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In Situ gas phase passivation methods can enable new channel materials. Toward this end pure anhydrous HOOH and H2NNH2 membrane gas delivery methods were developed. Implementation led to Si-OH passivation of InGaAs(001) at 350C and Si-N-H passivation of SiGe(110) at 285C. XPS and initial electrical characterization has been carried out. Feasibility for In Situ dry surface preparation and passivation was demonstrated.
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Hallam, Brett J., Alison M. Ciesla, Catherine C. Chan, Anastasia Soeriyadi, Shaoyang Liu, Arman Mahboubi Soufiani, Matthew Wright, and Stuart Wenham. "Overcoming the Challenges of Hydrogenation in Silicon Solar Cells." Australian Journal of Chemistry 71, no. 10 (2018): 743. http://dx.doi.org/10.1071/ch18271.

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The challenges of passivating defects in silicon solar cells using hydrogen atoms are discussed. Atomic hydrogen is naturally incorporated into conventional silicon solar cells through the deposition of hydrogen-containing dielectric layers and the metallisation firing process. The firing process can readily passivate certain structural defects such as grain boundaries. However, the standard hydrogenation processes are ineffective at passivating numerous defects in silicon solar cells. This difficulty can be attributed to the atomic hydrogen naturally occupying low-mobility and low-reactivity charge states, or the thermal dissociation of hydrogen–defect complexes. The concentration of the highly mobile and reactive neutral-charge state of atomic hydrogen can be enhanced using excess carriers generated by light. Additional low-temperature hydrogenation processes implemented after the conventional fast-firing hydrogenation process are shown to improve the passivation of difficult structural defects. For process-induced defects, careful attention must be paid to the process sequence to ensure that a hydrogenation process is included after the defects are introduced into the device. Defects such as oxygen precipitates that form during high-temperature diffusion and oxidation processes can be passivated during the subsequent dielectric deposition and high-temperature firing process. However, for laser-based processes performed after firing, an additional hydrogenation process should be included after the introduction of the defects. Carrier-induced defects are even more challenging to passivate, and advanced hydrogenation methods incorporating minority carrier injection must be used to induce defect formation first, and, second, provide charge state manipulation to enable passivation. Doing so can increase the performance of industrial p-type Czochralski solar cells by 1.1 % absolute when using a new commercially available laser-based advanced hydrogenation tool.
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Dissertations / Theses on the topic "Hydrogen passivation"

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Chatterjee, Basab. "Hydrogen passivation of heteroepitaxial indium phosphide /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487947908403973.

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Jafari, A. H. "The effect of hydrogen on the passivation process of iron." Thesis, London Metropolitan University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.278931.

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Wilkinson, Andrew Richard. "The optical properties of silicon nanocrystals and the role of hydrogen passivation /." View thesis entry in Australian Digital Program, 2006. http://thesis.anu.edu.au/public/adt-ANU20060202.111537/index.html.

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Wilkinson, Andrew Richard, and arw109@rsphysse anu edu au. "The Optical Properties of Silicon Nanocrystals and the Role of Hydrogen Passivation." The Australian National University. Research School of Physical Sciences and Engineering, 2006. http://thesis.anu.edu.au./public/adt-ANU20060202.111537.

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This thesis examines the optical properties of nanoscale silicon and the sensitization of Er with Si. In this context, it predominantly investigates the role of defects in limiting the luminescence of Si nanocrystals, and the removal of these defects by hydrogen passivation. The kinetics of the defect passivation process, for both molecular and atomic hydrogen, are studied in detail. Moreover, the optical absorption of Si nanocrystals and the effect of annealing environment (during nanocrystal synthesis) on the luminescence are investigated. The effect of annealing temperature and hydrogen passivation on the coupling (energy transfer) of Si nanocrystals to optically active centres (Er) is also examined.¶ The electronic structure of silicon-implanted silica slides is investigated through optical absorption measurements. Before and after annealing to form Si nanocrystals, optical absorption spectra from these samples show considerable structure that is characteristic of the particular implant fluence. This structure is shown to correlate with the transmittance of the samples as calculated from the modified refractive index profile for each implant. Due to the high absorption coefficient of Si at short wavelengths, extinction at these wavelengths is found to be dominated by absorption. As such, scattering losses are surprisingly insignificant. To eliminate interference effects, photothermal deflection spectroscopy is used to obtain data on the band structure of Si in these samples. This data shows little variance from bulk Si structure and thus little effect of quantum confinement. This is attributed to the dominance of large nanocrystals in the absorption measurements.¶ The effect of annealing environment on the photoluminescence (PL) from silicon nanocrystals synthesized in fused silica by ion implantation and thermal annealing is studied as a function of annealing temperature and time. Interestingly, the choice of annealing environment (Ar, N2, or 5 % H2 in N2) is found to affect the shape and intensity of luminescence emission spectra, an effect that is attributed both to variations in nanocrystal size and the density of defect states at the nanocrystal/oxide interface.¶ The passivation kinetics of luminescence-quenching defects, associated with Si nanocrystals in SiO2, during isothermal and isochronal annealing in molecular hydrogen are studied by time-resolved PL. The passivation of these defects is modeled using the Generalized Simple Thermal model of simultaneous passivation and desorption, proposed by Stesmans. Values for the reaction-rate parameters are determined for the first time and found to be in excellent agreement with values previously determined for paramagnetic Si dangling-bond defects (Pb type centers) found at planar Si/SiO2 interfaces; supporting the view that non-radiative recombination in Si nanocrystals is dominated by such defects.¶ The passivation kinetics of luminescence-quenching defects during isothermal and isochronal annealing in atomic hydrogen are studied by continuous and time-resolved PL. The kinetics are compared to those for standard passivation in molecular hydrogen and found to be significantly different. Atomic hydrogen is generated using the alneal process, through reactions between a deposited Al layer and H2O or –OH radicals in the SiO2. The passivation and desorption kinetics are shown to be consistent with the existence of two classes of nonradiative defects: one that reacts with both atomic and molecular hydrogen, and the other that reacts only with atomic hydrogen. A model incorporating a Gaussian spread in activation energies is presented that adequately describes the kinetics of atomic hydrogen passivation and dissociation for the samples.¶ The effect of annealing temperature and hydrogen passivation on the excitation cross-section and PL of erbium in silicon-rich silica is studied. Samples are prepared by co-implantation of Si and Er into SiO2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved PL, the effective erbium excitation cross-section is shown to increase by a factor of 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 micron only in the presence of Si nanocrystals. The implications of these results for realizing a silicon-based optical amplifier are also discussed.
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Yelundur, Vijay Nag. "Understanding and Implementation of Hydrogen Passivation of Defects in String Ribbon Silicon for High-Efficiency, Manufacturable, Silicon Solar Cells." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/5271.

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Photovoltaics offers a unique solution to energy and environmental problems simultaneously. However, widespread application of photovoltaics will not be realized until costs are reduced by about a factor of four without sacrificing performance. Silicon crystallization and wafering account for about 55% of the photovoltaic module manufacturing cost, but can be reduced significantly if a ribbon silicon material, such as String Ribbon Si, is used as an alternative to cast Si. However, the growth of String Ribbon leads to a high density of electrically active bulk defects that limit the minority carrier lifetime and solar cell performance. The research tasks of this thesis focus on the understanding, development, and implementation of defect passivation techniques to increase the bulk carrier lifetime in String Ribbon Si in order to enhance solar cell efficiency. Hydrogen passivation of defects in Si can be performed during solar cell processing by utilizing the hydrogen available during plasma-enhanced chemical vapor deposition (PECVD) of SiNx:H films. It is shown in this thesis that hydrogen passivation of defects during the simultaneous anneal of a screen-printed Al layer on the back and a PECVD SiNx:H film increases the bulk lifetime in String Ribbon by more than 30 ?A three step physical model is proposed to explain the hydrogen defect passivation. Appropriate implementation of the Al-enhanced defect passivation treatment leads to String Ribbon solar cell efficiencies as high as 14.7%. Further enhancement of bulk lifetime up to 92 ?s achieved through in-situ NH3 plasma pretreatment and low-frequency (LF) plasma excitation during SiNx:H deposition followed by a rapid thermal anneal (RTA). Development of an optimized two-step RTA firing cycle for hydrogen passivation, the formation of an Al-doped back surface field, and screen-printed contact firing results in solar cell efficiencies as high as 15.6%. In the final task of this thesis, a rapid thermal treatment performed in a conveyer belt furnace is developed to achieve a peak efficiency of 15.9% with a bulk lifetime of 140 ?Simulations of further solar cell efficiency enhancement up to 17-18% are presented to provide guidance for future research.
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Atluri, Vasudeva Prasad 1959. "Hydrogen passivation of silicon(100) used as templates for low-temperature epitaxy and oxidation." Diss., The University of Arizona, 1998. http://hdl.handle.net/10150/282650.

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Epitaxial growth, oxidation and ohmic contacts require surfaces as free as possible of physical defects and chemical contaminants, especially, oxygen and hydrocarbons. Wet chemical cleaning typically involves a RCA clean to remove contaminants by stripping the native oxide and regrowing a chemical oxide with only trace levels of carbon and metallic impurities. Low temperature epitaxy, T limits the thermal budget for the desorption of impurities and surface oxides, and can be performed on processed structures. But, silicon dioxide cannot be desorbed at temperatures lower than 800°C. Recently, hydrogen passivation of Si(111) has been reported to produce stable and ordered surfaces at low temperatures. Hydrogen can then be desorbed between 200°C and 600°C prior to deposition. In this work, Si(100) is passivated via a solution of hydrofluoric acid in alcohol (methanol, ethanol, or isopropyl alcohol) with HF concentrations between 0.5 to 10%. A rinse in water or alcohol is performed after etching to remove excess fluorine. This work investigates wet chemical cleaning of Si(100) to produce ordered, hydrogen-terminated, oxygen- and carbon-free surfaces to be used as templates for low temperature epitaxial growth and rapid thermal oxidation. Ion beam analysis, Tapping mode atomic force microscopy, Fourier transform infrared spectroscopy, Secondary ion mass spectroscopy, Chemical etching, Capacitance-voltage measurements and Ellipsometry are used to measure, at the surface and interface, impurities concentration, residual disorder, crystalline order, surface topography, roughness, chemical composition, defects density, electrical characteristics, thickness, and refractive index as a function of cleaning conditions for homoepitaxial silicon growth and oxidation. The wetting characteristics of the Si(100) surfaces are measured with a tilting plate technique. Different materials are analyzed by ion beam analysis for use as hydrogen standards in elastic recoil detection of hydrogen on sample surfaces. The results obtained in this study provide a quantitative optimization of passivation of Si(100) surfaces and their use as templates for low temperature epitaxy and rapid thermal oxidation. Ion beam analysis shows that the total coverage of H increases during passivation of Si(100) via HF in alcohol, while Fourier transform infrared spectroscopy indicates that more complex termination than the formation of simple silicon hydrides occurs.
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Jeong, Ji-Weon. "Hydrogen passivation of defects and rapid thermal processing for high-efficiency silicon ribbon solar cells." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/15615.

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Valente, Damien. "Soudure directe silicium sur silicium : étude de procédés de passivation de l'interface." Thesis, Tours, 2011. http://www.theses.fr/2011TOUR4048/document.

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Ces travaux de thèse accompagnent le développement de nouvelles architectures d’interrupteurs monolithiques bidirectionnels en courant et en tension. L’une des voies technologiques proposées consiste à contrôler les propriétés électriques de l’interface de soudure Si-Si. Nous avons mis en évidence la nature complexe de l’activité électrique de l’interface avec l’existence d’un continuum d’états d’énergie au caractère recombinant. L’intégration d’une telle brique technologique nécessite alors la maîtrise de la passivation/décoration de l’interface par diffusion d’impuretés. La passivation des états d’interfaces par hydrogénation a montré une amélioration des propriétés électriques globales de l’interface de soudure avec une réduction de la dispersion des paramètres électriques. Une contamination contrôlée par diffusion de platine, nous a permis d’obtenir une désactivation, voire une compensation, du phosphore à l’interface, accompagnée d’une disparition des niveaux profonds
1-lydrophobic silicon direct wafer bonding is an interesting way to realize new devices, espccia1lhen it could substitutc for double-side lithography or give access tu buried layers during process. This study goes with the design of a monolithic switch bidirectional in current and voltage for household appliances. We investigate the electrical properties of hydrophobic silicon wafer bonded interface. We have shown the interface is composed of several electronic defects, due to lattice deformations and residual contaminations, generating deep levels with recombinant properties. Finally, this study is focused on its electrical characterization and how to control its electrical activity. Hydrogenation and platinum diffusion are performed at Iow temperature and underline the possibility to restore the phosphorus biilk doping level. Therefore, an appropriate thermal treatment could be used to passivate a bonded interface without any bulk contamination
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Burrows, Michael Z. "Role of silicon hydride bonding environment in alpha-silicon hydrogen films for c-silicon surface passivation /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 152 p, 2008. http://proquest.umi.com/pqdweb?did=1654501711&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Crowe, Loretta L. "Reversible Attachment of Organic Dyes to Silica Surface Through Meijer-Type Hydrogen Bonding." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/14058.

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In an approach to creating molecular-scale structures on glass surfaces via self assembly, a strongly-dimerizing ureido-[2-(4-pyrimidone)] (UPy) quadruple hydrogen-bonding array was chemically immobilized on silica surfaces by way of a triethoxysilane functionality. The unreacted surface silanols were then thoroughly passivated with a monofunctional organosilane, resulting in isolated UPy binding sites on the glass surface. These binding sites were found to selectively bind the strongly fluorescent perylenediimide (PDI) functionalized UPy molecules from solution, thus non-covalently linking the fluorophore to the surface. The association between the self-complementary molecules was exceptionally strong, both in solution and at the surface, such that effective hydrogen-bonding was retained after most solvent treatments. The binding was also reversible, however, so that washes with polar protic and dipolar aprotic solvents with high hydrogen-bonding capabilities, such as water, alcohols, and DMSO, resulted in the removal of the non-covalently bound fluorophore-tagged UPy. The UPy:UPy dimer system was also investigated in solution, using pyrene intramolecular excimer formation as a monitor of the dissociation of the pyrene heterodimers into homodimers incapable of forming excimers at micromolar concentrations. In addition, the energy transfer process in solution between pyrene and perylenediimide fluorophores linked through UPy dimerization was studied, with the intention using FRET-based measurements on the surface at single-molecule levels in order to determine the distances between UPy binding sites. Energy transfer was found to occur, but the observed photophysical behavior was complicated by possible secondary processes, which steady-state fluorescence measurements were unable to elucidate. The benefit of using this UPy system for attaching molecules to a surface lies in its reversibility of binding and versatility in manner of molecules which van be retained on the modified surface with a strong association. In this way molecular-scale features could conceivably be constructed on a surface by self-assembly, with the option of further chemical reactions to lock them in place, thus creating structures beyond the accessibility range of the conventional lithographic methods.
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Book chapters on the topic "Hydrogen passivation"

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Holtz, Per Olof, and Qing Xiang Zhao. "Hydrogen Passivation." In Springer Series in Materials Science, 117–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18657-8_8.

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Hanoka, Jack I. "Hydrogen Passivation of Polycrystalline Silicon." In Hydrogen in Disordered and Amorphous Solids, 81–90. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4899-2025-6_8.

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Pearton, Stephen J., James W. Corbett, and Michael Stavola. "Passivation of Deep Levels by Hydrogen." In Hydrogen in Crystalline Semiconductors, 28–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84778-3_3.

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Pearton, Stephen J., James W. Corbett, and Michael Stavola. "Shallow Impurity Passivation by Atomic Hydrogen." In Hydrogen in Crystalline Semiconductors, 63–101. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84778-3_4.

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Weber, Jörg, and Dirk I. Bohne. "Passivation of Thermal Donors by Atomic Hydrogen." In Early Stages of Oxygen Precipitation in Silicon, 123–40. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0355-5_7.

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Häßler, Ch, G. Pensl, and M. Schulz. "Hydrogen-Passivation of Grain Boundaries in Polycrystalline Silicon." In Springer Proceedings in Physics, 259–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_37.

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Bardhadi, A., H. Amzil, J. C. Muller, and P. Siffert. "Thermal Activation and Hydrogen Passivation of Grain Boundaries." In Springer Proceedings in Physics, 158–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_21.

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Pirzer, M., and R. Schindler. "Hydrogen Passivation of Grain Boundaries in Silicon Sheet Material." In Springer Proceedings in Physics, 122–26. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_16.

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Hartiti, B., J. P. Schunck, J. C. Muller, J. P. Stoquert, E. Hussian, P. Siffert, and D. Sarti. "Comparative Efficiency of Hydrogen Passivation Procedures for Cost Effective Multicrystalline Silicon Solar Cells." In Tenth E.C. Photovoltaic Solar Energy Conference, 270–72. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_67.

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Seyller, Thomas. "Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation." In Materials Science Forum, 535–40. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.535.

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Conference papers on the topic "Hydrogen passivation"

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Sharp, Ian D., and Jason K. Cooper. "Optoelectronic properties of BiVO4 photoanodes: From fundamental electronic structure to defect passivation (Conference Presentation)." In Solar Hydrogen and Nanotechnology XI, edited by Chung-Li Dong. SPIE, 2016. http://dx.doi.org/10.1117/12.2239170.

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Ritter, Jacob, Kelvin G. Lynn, and Matthew D. McCluskey. "Hydrogen passivation of calcium and magnesium doped [beta]-Ga2O3." In Oxide-based Materials and Devices X, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2019. http://dx.doi.org/10.1117/12.2507187.

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Dingemans, G., W. Beyer, and W. M. M. Kessels. "Thermal effusion measurements: Probing hydrogen in surface passivation schemes." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317830.

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Pobegen, G., M. Nelhiebel, and T. Grasser. "Detrimental impact of hydrogen passivation on NBTI and HC degradation." In 2013 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2013. http://dx.doi.org/10.1109/irps.2013.6532125.

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Shi, Jianwei, and Zachary C. Holman. "Alleviating Hydrogen Plasma Damage to Amorphous/Crystalline Silicon Interface Passivation." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366193.

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Hallam, Brett, Adeline Sugianto, Ly Mai, GuangQi Xu, Catherine Chan, Malcolm Abbott, Stuart Wenham, Angel Uruena, Monica Aleman, and Jef Poortmans. "Hydrogen passivation of laser-induced defects for silicon solar cells." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925432.

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Jafari, Sahar, Jens Hirsch, Dominik Lausch, Marco John, Norbert Bernhard, and Sylke Meyer. "Composition limited hydrogen effusion rate of a-SiNx:H passivation stack." In 15th International Conference on Concentrator Photovoltaic Systems (CPV-15). AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5123853.

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Kim, Moonyong, Daniel Chen, Malcolm Abbott, Stuart Wenham, and Brett Hallam. "Role of hydrogen: Formation and passivation of meta-stable defects due to hydrogen in silicon." In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049329.

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Fang, Jin, and Laurent Pilon. "Effect of Hydrogen Passivation on the Thermal Conductivity of Nanoporous Crystalline Silicon: A Molecular Dynamics Study." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75153.

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Abstract:
Effect of hydrogen passivation on thermal conductivity of nanoporous crystalline silicon was investigated using equilibrium molecular dynamics (MD) simulations from 500 to 1000 K. The porosity varied from 8% to 38% while the pore diameter ranged from 1.74 to 2.93 nm. Hydrogen passivation of the pore surface was found to reduce thermal conductivity by about 20% at 500 K due to enhanced phonon scattering by the passivated atoms at the nanopore surface. The effect of passivation diminished with increasing temperature. In fact, the phonon density of states at high temperatures was similar for both passivated and unpassivated silicon atoms. Finally, the thermal conductivity k was found to be linearly proportional to (1–1.5fv)/(Ai/4) where fv is the porosity and Ai is the pore interfacial area concentration. This scaling law was previously established for un-passivated silicon using non-equilibrium MD simulations.
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Tanaka, Jun, Yoshihiro Ueoka, Koji Yoshitsugu, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kazushige Takechi, and Hiroshi Tanabe. "Hydrogen behavior from ALD Al2O3 passivation layer for amorphous InGaZnO TFTs." In 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2014. http://dx.doi.org/10.1109/am-fpd.2014.6867115.

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Reports on the topic "Hydrogen passivation"

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Estreicher, S. K. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 10 February 2000--10 March 2003. Office of Scientific and Technical Information (OSTI), September 2003. http://dx.doi.org/10.2172/15004721.

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Ashok, S. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003. Office of Scientific and Technical Information (OSTI), December 2004. http://dx.doi.org/10.2172/15011711.

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Ashok, S. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Subcontract Report, 2 May 2000--2 July 2003. Office of Scientific and Technical Information (OSTI), May 2004. http://dx.doi.org/10.2172/15007607.

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Stavola, M. Research on the Hydrogen Passivation of Defects and Impurities in Si Relevant to Crystalline Si Solar Cell Materials: Final Report, 16 February 2000 -- 15 April 2003. Office of Scientific and Technical Information (OSTI), September 2003. http://dx.doi.org/10.2172/15004722.

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