Relevant bibliographies by topics / Hydrated amorphous silicon dioxide

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Hydrated amorphous silicon dioxide'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Hydrated amorphous silicon dioxide"

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McIntyre, Hannah M., and Megan L. Hart. "Immobilization of TiO2 Nanoparticles in Cement for Improved Photocatalytic Reactivity and Treatment of Organic Pollutants." Catalysts 11, no. 8 (August 1, 2021): 938. http://dx.doi.org/10.3390/catal11080938.

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Non-point organic pollutants in stormwater are a growing problem in the urban environment which lack effective and efficient treatment technologies. Incorporation of conventional wastewater techniques within stormwater management practices could fundamentally change how stormwater quality is managed because contaminants can be degraded during stormwater transport or storage. This study investigated the photocatalytic reactivity of titanium dioxide functionalized with maleic anhydride (Ti-MAH) within cement pastes when compared to ordinary Portland cement. Preparation of Ti-MAH was performed by permanently bonding maleic anhydride to titanium in methanol, drying and powdering the residual material, and then inter-grinding the preparation with cement during mixing. When compared with OPC, the Ti-MAH cured cement paste is more reactive under a wider range of light wavelengths, possesses a higher band gap, sustains this heightened reactivity over multiple testing iterations, and treats organics effectively (>95% methylene blue removal). Amorphous silica within calcium-silica-hydrate, C-S-H, is theorized to bond to the powdered Ti-MAH during curing. Verification of silicon bonding to the titanium by way of MAH was demonstrated by FTIR spectra, SEM imagery, and XRD. Creating a sustainable and passive photocatalytic cement that precisely bonds silica to Ti-MAH is useful for organic contaminants in urban stormwater, but use can translate to other applications because Ti-MAH bonds readily with any amorphous silica such as glass materials, paints and coatings, optics, and LEDS, among many others.
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Putrolainen, V. V., P. P. Boriskov, A. A. Velichko, A. L. Pergament, and N. A. Kuldin. "Memory electrical switching in hydrated amorphous vanadium dioxide." Technical Physics 55, no. 2 (February 2010): 247–50. http://dx.doi.org/10.1134/s1063784210020143.

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Golikova, O. A. "Defects in intrinsic and pseudodoped amorphous hydrated silicon." Semiconductors 31, no. 3 (March 1997): 228–31. http://dx.doi.org/10.1134/1.1187117.

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Ravindra, N. M., and J. Narayan. "Optical properties of amorphous silicon and silicon dioxide." Journal of Applied Physics 60, no. 3 (August 1986): 1139–46. http://dx.doi.org/10.1063/1.337358.

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Zhang, Ming, Hongliang He, F. F. Xu, T. Sekine, T. Kobayashi, and Y. Bando. "Cubic silicon nitride embedded in amorphous silicon dioxide." Journal of Materials Research 16, no. 8 (August 2001): 2179–81. http://dx.doi.org/10.1557/jmr.2001.0296.

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A cubic silicon nitride embedded in amorphous SiO2 compound has been characterized by means of high-resolution analytical electron microscopy. The specimen was prepared from β–Si3N4 powders at a high pressure and temperature by shock wave compression. The typical high-resolution electron microscopy image from one small crystallite together with its diffractodiagram pattern indicated that the Si3N4 crystallites had a cubic symmetry. The electron energy loss spectrum from the small crystallite is very different from those of outside amorphous SiO2 phase and raw β–Si3N4 particles, and there are more N elements that were detected in this small crystallite than those in standard Si3N4.
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Gunde, Marta Klanjšek. "Vibrational modes in amorphous silicon dioxide." Physica B: Condensed Matter 292, no. 3-4 (November 2000): 286–95. http://dx.doi.org/10.1016/s0921-4526(00)00475-0.

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Ablova, M. S., G. S. Kulikov, and S. K. Persheev. "Gamma-induced metastable states of doped, amorphous, hydrated silicon." Semiconductors 32, no. 2 (February 1998): 222–24. http://dx.doi.org/10.1134/1.1187346.

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Kazanskiı̆, A. G. "Photoconductivity of amorphous hydrated silicon doped by ion implantation." Semiconductors 33, no. 3 (March 1999): 332. http://dx.doi.org/10.1134/1.1187690.

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Griscom, David L. "Self-trapped holes in amorphous silicon dioxide." Physical Review B 40, no. 6 (August 15, 1989): 4224–27. http://dx.doi.org/10.1103/physrevb.40.4224.

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Stathis, J. H., and M. A. Kastner. "Time-resolved photoluminescence in amorphous silicon dioxide." Physical Review B 35, no. 6 (February 15, 1987): 2972–79. http://dx.doi.org/10.1103/physrevb.35.2972.

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Dissertations / Theses on the topic "Hydrated amorphous silicon dioxide"

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Watchman, Alan Leslie, and n/a. "Properties and dating of silica skins associated with rock art." University of Canberra. Applied Science, 1996. http://erl.canberra.edu.au./public/adt-AUC20061110.104443.

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Hydrated amorphous silicon dioxide (Si02.nH-,O), or opal-A, is deposited naturally from seepage and runoff water as white or brown rock surface coatings, called 'skins', that often partly obscure rock paintings and engravings, but occasionally, a thin translucent silica skin can form a protective film over rock art. White lustrous silica skins, less than 1 mm thick, occur where seepage water regularly flows from bedding and joint planes, whereas much thinner brown skins form on the sides of boulders and cliffs where runoff water periodically flows. To find the degree of silica skin variability and to determine how climate and rock type affect the properties of silica skins I collected samples at seven Australian and two Canadian rock painting sites that were located in temperate, tropical and sub-arctic regions. The skins had developed on sandstone, quartzite, schist, gneiss and migmatite. I studied the effects of the skins on rock art stability, documented their compositions, textures and structures to establish their common properties, and searched for a way to date the silica which would provide an indication of the minimum age of the underlying art. 1 also made replication experiments to determine factors that influence the properties of artificial silica skins and the rates of their precipitation so that I could propose a mechanism for natural silica skin formation, and ascertain whether an artificial silica skin could act as a protective rock art conservation measure. I was able to subdivide the analysed samples into silica skin Types I, II and III on the basis of their colour (translucent, white or brown), composition (SiO2, Al2O3 and absorbed water contents) and texture (smooth vitreous or vermiform). I propose that silica skins initially begin to form on stable rock surfaces by a process involving a combination of evaporation- and ionic-induced polymerisation of silicic acid in seepage and runoff water. Condensation reactions, random clustering of small silica spheres and deposition of the resulting aggregates eventually produce a thin surficial silica film. Deposition of silica often traps micro-organisms that live in the damp seepage and runoff water zones, and these fossils in finely laminated skins enable the radiocarbon dating of silica deposition, and therefore the dating of rock paintings enclosed by silica. Micro-excavation of silica layers associated with rock art combined with accelerator mass spectrometry gave preliminary radiocarbon determinations that were either consistent with, or contradicted, prevailing opinions about the antiquity of the rock art at selected sites. Experiments using a laser technique for combusting fossilised microorganisms in finely laminated skins were unable to generate sufficient carbon for dating. Catalysis of a mixture of equal proportions of methyl-trimethoxy silane and water produces a translucent stable film that may be suitable as a consolidant, whereas other artificial silica skins made from silica glass and tetra-ethoxy silane develop microfractures on drying, and these are unsuitable as rock art consolidants.
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Gabriel, Margaret A. "Electronic defects in amorphous silicon dioxide /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8553.

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Stathis, James Henry. "Optically induced metastable defect states in amorphous silicon dioxide." Thesis, Massachusetts Institute of Technology, 1985. http://hdl.handle.net/1721.1/14990.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1986.
MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE
Bibliography: leaves 336-342.
by James Henry Stathis.
Ph.D.
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Bhatnagar, Yashraj Kishore. "Photo-CVD of hydrogenated amorphous silicon and dioxide using an external deuterium lamp." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235768.

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DeLima, Joaquin Joao. "The electronic properties of pure and transition metal doped amorphous silicon-dioxide films." Thesis, University of Edinburgh, 1987. http://hdl.handle.net/1842/13610.

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Lane, Christopher Don. "Low-Energy Electron Induced Processes in Molecular Thin Films Condensed on Silicon and Titanium Dioxide Surfaces." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14588.

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The focus of the presented research is to examine the fundamental physics and chemistry of low-energy electron-stimulated reactions on adsorbate covered single crystal surfaces. Specifically, condensed SiCl₄ on the Si(111) surface and condensed H₂O on the TiO₂ (110) surface have been studied. By varying adsorbate film thicknesses, the coupling strength of the target molecule to the substrate and surrounding media dictates the progression of the electron induced reactions. To investigate the electron interactions with SiCl₄ on the Si(111) surface, desorbing cations and neutrals were detected via time of flight mass spectrometry (ToF-MS) where neutral chlorine atoms were ionized using a resonance enhanced multi-photon ionization (REMPI) technique. Structure in the cation and neutral yields were assigned to molecular excitations. At an incident electron energy of 10 eV, a resonance structure in the neutral yields was attributed to a negative ion resonance and observed in thick and thin films of SiCl₄. With monoenergetic electrons, specific surface reactions can be controlled which have implications for film growth, surface patterning and masking, and etching. For the H₂O/TiO₂ (110) system, the water interactions with the TiO₂ surface are revealed through the strong electron induced reaction dependencies on the water coverage. Understanding the nonthermal reaction landscape of H₂O on the TiO₂ (110) surface is crucial for developing the system as a catalytic source of hydrogen. The electron-stimulated oxidation of the TiO₂ (110) surface and electron induced sputtering of H ₂O was investigated. Irradiation of water films ([coverage]< 3 ML) oxidized the TiO₂ (110) surface similarly as surface oxidation via O₂ deposition. Each H₂O molecule in the first monolayer seems to be a target for the incoming electron initiating the oxidation. However, water coverages greater than a monolayer limited the oxidation process. The electron-stimulated desorption and sputtering yields of water from the TiO₂ (110) surface were measured as a function of water coverage. Surprisingly, the amount of water sputtered from the surface is nonlinearly dependent on water coverage.
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Pyreňová, Eliška. "Studium vlastností polymery modifikovaných malt využívající pucolánově aktivní materiály." Master's thesis, Vysoké učení technické v Brně. Fakulta stavební, 2016. http://www.nusl.cz/ntk/nusl-240307.

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This diploma thesis is focused on the study of the properties of polymer-modified cementitious mortars which using pozzolanic active materials based on amorphous silica. Explores the possibilities of using the recycled glass as a partial replacement of cement in PMM. Properties of mortars are reviewed in mineralogical and technological point of view. For specification of the results were used the analysis RTG, DTA and REM.
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XU, SHI-CHANG, and 徐世昌. "PECVD silicon dioxide and hydrogenated amorphous thin film transistor." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/12340392969036141889.

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Chen, Mao Song, and 陳茂松. "Planarization of amorphous silicon thin film transistors by liquid phase deposition of silicon dioxide." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/66528352559115966916.

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Teng, Sheng-Han, and 鄧聖瀚. "Simulations for dopants distribution of boron-doped silicon nanocrystal embedded in amorphous silicon dioxide matrix." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/cx37z3.

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碩士
國立交通大學
電子工程學系 電子研究所
103
The renewable solar energy has increased 40% every year in the past decade, as carbon emission reduction is becoming the common goal for fighting global climate change. Because of abundant materials and mature fabrication techniques, silicon-based solar cells still dominate 90% of the global photovoltaics market nowadays. The third-generation solar cells are being extensively developed in order to reduce the cost per watt. One of such underdeveloped solar cells consists of silicon quantum dots (Si QDs) embedded in a dielectric matrix, which have the Si-based advantages and follow the well-known QD fabrication process. Moreover, the Si QD band gap can be tuned by varying the nanocrystal sizes due to the quantum confinements. That is, the silicon nanocrystals with different sizes can absorb a wide range of solar spectra, and consequently the optical absorption coefficient is enhanced in such a QD design. Besides, one can further add dopants to improve the current transport. In fact, experimentalists have obtained both better carrier transport efficiency and higher open-circuit voltage by doping the Si QD solar cells. This work mainly focuses on two interests. First, experimentalists can roughly distinguish the silicon nanocrystals from its amorphous silicon-dioxide matrix in TEM images, but the atomistic details of their interface still remain unclear. Second, although better efficiency of solar cells is observed by adding dopants, one has no idea how dopants distribute in the solar cells. Both properties are important for further revealing the mechanism of efficiency improvements by quantum dots and dopants. We start by building spherical silicon nanoclusters (diameters 4, 6, 8 nm) embedded in the amorphous silicon dioxide matrix, where each silicon nanocluster contains a crystalline seed (diameter 2 nm) at its center, surrounded by an amorphous shell. We simulate such a structure by molecular dynamics under the experimental annealing temperature 1100 °C. We find that, after annealing simulation, the crystalline core grows, and the outer shell becomes a bilayer of amorphous silicon and silicon-rich oxide. We also dope the silicon nanoclusters (diameter 8 nm) with different numbers of boron atoms. We simulate such a doped system again under the experimental temperature. We find that the boron atoms hardly displace at all in both the crystalline silicon region and the silicon dioxide matrix, but significantly migrate within the bilayer shell of amorphous silicon and silicon-rich oxide. Finally, we have also done some preliminary calculations for preparing future electronic-transport study by the non-equilibrium Green’s function within the framework of density functional theory. In summary, we study the Si QD solar cells by molecular dynamics simulation to understand the microscopic mechanisms of the system. We expect that such understandings will help further improvements of the Si QD-based solar cells, and may eventually have impacts on future solar-energy industry.
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Books on the topic "Hydrated amorphous silicon dioxide"

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R. A. B. Devine (Editor), J. P. Duraud (Editor), and E. Dooryhée (Editor), eds. Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide. Wiley, 2000.

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Book chapters on the topic "Hydrated amorphous silicon dioxide"

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Gurtov, V. A., and A. I. Nazarov. "Radiation-Induced Conductivity of Thin Silicon Dioxide Films on Silicon." In The Physics and Technology of Amorphous SiO2, 473–79. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_60.

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Dias, A. G., L. Guimarães, and M. Brunel. "Low Temperature P.E.C.V.D. Silicon Rich Silicon Dioxide Films Doped with Fluorine." In The Physics and Technology of Amorphous SiO2, 359–63. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_49.

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Fowler, W. Beall, Jayanta K. Rudra, Arthur H. Edwards, and Frank J. Feigl. "Theory of Oxygen-Vacancy Defects in Silicon Dioxide." In The Physics and Technology of Amorphous SiO2, 107–12. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_12.

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Zvanut, M. E., F. J. Feigl, W. B. Fowler, and J. K. Rudra. "Observation of the Neutral Oxygen Vacancy in Silicon Dioxide." In The Physics and Technology of Amorphous SiO2, 187–92. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_24.

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Griscom, David L. "THE NATURES OF POINT DEFECTS IN AMORPHOUS SILICON DIOXIDE." In Defects in SiO2 and Related Dielectrics: Science and Technology, 117–59. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-010-0944-7_4.

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Dias, A. G., E. Bustarret, and R. C. da Silva. "Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films." In The Physics and Technology of Amorphous SiO2, 353–58. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_48.

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Ching, W. Y. "Electronic Structures of Crystalline and Amorphous Silicon Dioxide and Related Materials." In Structure and Bonding in Noncrystalline Solids, 77–99. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-9477-2_5.

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Krishna, K. V., J. J. Delima, A. J. Snell, and A. E. Owen. "Electrical and Optical Characteristics of Vanadium Doped Amorphous Silicon Dioxide Films Prepared by CVD." In The Physics and Technology of Amorphous SiO2, 231–35. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_31.

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Min’ko, N., and O. Dobrinskaya. "Rational Usage of Amorphous Varieties of Silicon Dioxide in Dry Mixtures of Glass with Specific Light Transmittance." In Springer Proceedings in Earth and Environmental Sciences, 272–76. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-22974-0_65.

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Juan, Paredes, Oscar Analuiza, Mario Carpio, and Willan Castillo. "Optimization of the Mechanical Properties Responses of SBR 1502 Rubber/Amorphous Silicon Dioxide/Others by DOE-MSR Methodology." In Advances and Applications in Computer Science, Electronics and Industrial Engineering, 215–31. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4565-2_14.

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Conference papers on the topic "Hydrated amorphous silicon dioxide"

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Malyarov, V. G., Igor A. Khrebtov, Yu V. Kulikov, Igor I. Shaganov, V. Y. Zerov, and Nikolai A. Feoktistov. "Comparative investigations of the bolometric properties of thin film structures based on vanadium dioxide and amorphous hydrated silicon." In International Conference on Photoelectronics and Night Vision Devices, edited by Anatoly M. Filachev. SPIE, 1999. http://dx.doi.org/10.1117/12.350896.

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Meloni, Simone. "Nucleation of silicon nanoparticles in amorphous silicon dioxide matrices." In FUNDAMENTALS AND APPLICATIONS IN SILICA AND ADVANCED DIELECTRICS (SIO2014): X International Symposium on SiO2, Advanced Dielectrics and Related Devices. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4900463.

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KANETA, Chioko. "Hole Trapping Due to Impurities in Amorphous Silicon Dioxide." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.b-4-1.

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Wimmer, Y., W. Goes, A. M. El-Sayed, A. L. Shluger, and T. Grasser. "A density-functional study of defect volatility in amorphous silicon dioxide." In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292254.

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Mohd Muzafa Jumidali, Md Roslan Hashim, and Kamal Mahir Sulieman. "Germanium catalyzed amorphous silicon dioxide nanowire synthesized via thermal evaporation method." In 2010 International Conference on Enabling Science and Nanotechnology (ESciNano). IEEE, 2010. http://dx.doi.org/10.1109/escinano.2010.5700991.

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KANETA, Chioko. "Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pc-1-8.

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Jumidali, M. M., M. R. Hashim, K. M. Sulieman, Abdul Manaf Hashim, and Vijay K. Arora. "Germanium Catalyzed Amorphous Silicon Dioxide Nanowires Synthesized via Thermal Evaporation Method." In ENABLING SCIENCE AND NANOTECHNOLOGY: 2010 International Conference On Enabling Science And Nanotechnology Escinano2010. AIP, 2011. http://dx.doi.org/10.1063/1.3587010.

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Hoex, B., F. J. J. Peeters, A. J. M. van Erven, M. D. Bijker, W. M. M. Kessels, and M. C. M. van de Sanden. "High-Quality Surface Passivation Obtained by High-Rate Deposited Silicon Nitride, Silicon Dioxide and Amorphous Silicon using the Versatile Expanding Thermal Plasma Technique." In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279296.

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Jou, Rong-Yuan. "Measurements for the Moisture Permeations and Thermal Resistances of Cyclo Olefin Copolymer Substrates Deposited a Silicon Dioxide Film." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52130.

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Plastic substrates for organic light-emitting devices (OLED) are extremely sensitive to moisture and oxygen. A new amorphous engineering thermoplastic, nominated cyclic olefin copolymer (COC) has been used for this application, because of higher transparence, lower birefringence, lower dispersion and lower water absorption. However, COC plastic substrates can’t sustain plasma-based processing temperatures at 350°C. In this study, experiments of the moisture permeation rate testing and the thermal resistance experiments are conducted to explore the moisture diffusion barrier and thermal barrier characteristics of COC substrate deposited a SiO2 thin film on it. Silicon dioxide layer of thickness, 0.25μm, 0.5μm, and 1 μm, respectively, are fabricated by PECVD. For the permeation rate measurement, the Ca-test method is adopted. For the thermal resistance measurements, two methods of the thermocouple in vacuum environment and the IR thermography are adopted and measured results are compared. Different surface temperatures, 323.15K, 373.15K, 408.15K, and 473.15K, respectively, are applied upon the silicon dioxide film and temperature differences for varied thickness of silicon dioxide film are measured. Experimental results are presented to investigate the behaviors of moisture diffusion barrier and thermal barrier characteristics of the COC/SiO2 structure.
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Terekhov, Vladimir, Konstantin Barkov, Dmitry Nesterov, Anatoliy Popov, Aleksey Barinov, Pavel Seredin, Dmitry Goloshchapov, et al. "OXYGEN INFLUENCE ON THE PHASE COMPOSITION AND ELECTRICAL PROPERTIES OF SIPOS FILMS." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1569.silicon-2020/101-105.

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The use of oxygen-doped semi-insulating silicon films of the SIPOS type as passivation coatings for semiconductor devices and IC makes it possible to increase the breakdown voltage of highvoltage devices. The aim of this work is to establish the influence of the oxygen content on the phase composition of SIPOS films and their electrophysical properties. The results of comprehensive studies show that SIPOS films at different values of γ have a complex phase composition of nanocomposites based on amorphous silicon containing silicon nanocrystals and silicon suboxides with a low oxidation state, such as SiO0.47, while SiO2 dioxide is not formed even at large values of γ.
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Reports on the topic "Hydrated amorphous silicon dioxide"

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Babic, Davorin, Raphael Tsu, and Richard F. Greene. Ground-State Energies of One- and Two-Electron Silicon Dots in an Amorphous Silicon Dioxide Matrix. Fort Belvoir, VA: Defense Technical Information Center, June 1992. http://dx.doi.org/10.21236/ada271027.

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