Academic literature on the topic 'HRTEM'
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Journal articles on the topic "HRTEM"
Howe, J. M. "Quantitative in situ hot-stage high-resolution Transmission Electron Microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 758–59. http://dx.doi.org/10.1017/s0424820100171523.
Full textLakshmi, R. Radha, D. Sruthi, K. Prithiv, S. Harippriya, and K. R. Aranganayagam. "Synthesis of ZnO and Ag/ZnO Nanorods: Characterization and Synergistic In Vitro Biocidal Studies." Advanced Science Letters 24, no. 8 (August 1, 2018): 5490–95. http://dx.doi.org/10.1166/asl.2018.12135.
Full textXing, Y. T., L. Y. Liu, D. F. Franceschini, W. C. Nunes, D. J. Smith, and I. G. Solorzano. "HRTEM and HRSTEM Study of Nanostructured Materials Prepared by Pulsed Laser Deposition." Microscopy and Microanalysis 22, S3 (July 2016): 2012–13. http://dx.doi.org/10.1017/s1431927616010904.
Full textArumugam, J., A. Dhayal Raj, and A. Albert Irudayaraj. "Morphology Manipulation and Related Properties of High Crystalline Bi2S3 Nanorods by Reflux Approach." Volume 4,Issue 5,2018 4, no. 5 (November 12, 2018): 524–26. http://dx.doi.org/10.30799/jnst.159.18040516.
Full textBarman, Jayanta, Archana Das, Bapan Banik, and Farhana Sultana. "Optimizing ZnO/CdS Nano Composite Controlled by Fe Doping Towards Efficiency in Water Treatment and Antimicrobial Activity." Current World Environment 16, no. 3 (December 31, 2021): 726–32. http://dx.doi.org/10.12944/cwe.16.3.6.
Full textHowe, J. M., T. M. Murray, K. T. Moore, A. A. Csontos, M. M. Tsai, A. Garg, and W. E. Benson. "Understanding Interphase Boundary Dynamics by In Situ High-Resolution and Energy-Filtering Transmission Electron Microscopy and Real-Time Image Simulation." Microscopy and Microanalysis 4, no. 3 (June 1998): 235–47. http://dx.doi.org/10.1017/s1431927698980230.
Full textCohen, Dov, Geoffrey H. Campbell, Wayne E. King, and C. Barry Carter. "Quantitative Hrtem of Twin Boundaries in Compound Semiconductors and Metals Using Non-Linear Least-Squares Methods." Microscopy and Microanalysis 4, S2 (July 1998): 784–85. http://dx.doi.org/10.1017/s1431927600024041.
Full textGonzález, Gema, Werner Stracke, Zoraya Lopez, Ulrike Keller, Andrea Ricker, and Rudolf Reichelt. "Characterization of Defects and Surface Structures in Microporous Materials by HRTEM, HRSEM, and AFM." Microscopy and Microanalysis 10, no. 02 (March 17, 2004): 224–35. http://dx.doi.org/10.1017/s1431927604040097.
Full textPailloux, Frédéric, Marie-Laure David, and Laurent Pizzagalli. "Quantitative HRTEM investigation of nanoplatelets." Micron 41, no. 2 (February 2010): 135–42. http://dx.doi.org/10.1016/j.micron.2009.09.005.
Full textOhnishi, N., T. Ohsuna, Y. Sakamoto, O. Terasaki, and K. Hiraga. "Quantitative HRTEM study of zeolite." Microporous and Mesoporous Materials 21, no. 4-6 (May 1998): 581–88. http://dx.doi.org/10.1016/s1387-1811(98)00026-2.
Full textDissertations / Theses on the topic "HRTEM"
Geipel, Thomas. "Applications of HRTEM in materials science problems and dislocation simulations." Case Western Reserve University School of Graduate Studies / OhioLINK, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=case1057163293.
Full textDickinson, Calum. "Metal oxide porous single crystals and other nanomaterials : an HRTEM study." Thesis, University of St Andrews, 2007. http://hdl.handle.net/10023/217.
Full textSenapati, Sephalika. "Evolution of Lamellar Structures in AL-AG Alloys." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3067.
Full textM.S.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
Saito, Mitsuhiro. "HRTEM investigations of structure and composition of polar Pd/ZnO heterophase interfaces." Stuttgart Max-Planck-Inst. für Metallforschung, 2005. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-25889.
Full textІстратов, М. Є. "TEM–HRTEM дослідження структури наноламінатних (Al0.5Ti0.5)N/ZrN покриттів та перспективи застосування у біомедичній галузі." Master's thesis, Сумський державний університет, 2020. https://essuir.sumdu.edu.ua/handle/123456789/81695.
Full textMuga, Ibarra Francisco Javier. "Comportamiento Mecánico y Microestructural de una Aleación Cu-1,8%p.Al-0,5%p.Be en el Rango Post-Superelástico." Tesis, Universidad de Chile, 2008. http://repositorio.uchile.cl/handle/2250/103146.
Full textKurasch, Simon [Verfasser]. "Atom-by-atom observations on defect formation and dynamics in 2D materials studied by HRTEM / Simon Kurasch." Ulm : Universität Ulm. Fakultät für Naturwissenschaften, 2014. http://d-nb.info/1046623370/34.
Full textChen, Qu. "Structural studies of defects in two-dimensional materials with atomic resolution." Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:392f2b1d-0488-4d10-96d9-817def04db2a.
Full textMa, Yanhang. "Structural study of nano-structured materials: electron crystallography approaches." Doctoral thesis, Stockholms universitet, Institutionen för material- och miljökemi (MMK), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:su:diva-129233.
Full textCeballos, Sanchez Oscar. "Stabilité thermique de structures de type TiN/ZrO2/InGaAs." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAY027/document.
Full textIII-V compound semiconductors, in particular InGaAs, are considered attractivealternative channel materials to replace Si in complementary metal-oxidesemiconductor(MOS) devices. Its high mobility and tunable band gap, requirementsfor high performance device design, have placed InGaAs as a promising candidate.However, the interfacial thermal stability and chemistry of high-k dielectrics on InGaAsis far more complex than those on Si. While most studies are focused on variouspassivation methods, such as the growth of interfacial passivation layers (Si, Ge, andSi/Ge) and/or chemical treatments to improve the quality of high-k/InGaAs interface,phenomena such as the out-diffusion of atomic species from the substrate as aconsequence of the thermal treatments have not been carefully studied. The thermaltreatments, which are related with integration processes of source and drain (S/D),lead to structural changes that degrade the electrical performance of the MOS device.A proper characterization of the structural alterations associated with the out-diffusionof elements from the substrate is important for understanding failure mechanisms. Inthis work it is presented an analysis of the structure and thermal stability ofTiN/ZrO2/InGaAs stacks by angle-resolved x-ray photoelectron spectroscopy (ARXPS).Through a non-destructive analysis method, it was possible to observe subtle effectssuch as the diffusion of substrate atomic species through the dielectric layer as aconsequence of thermal annealing. The knowledge of the film structure allowed forassessing the In and Ga depth profiles by means of the scenarios-method. For the asdeposited sample, In-O and Ga-O are located at the oxide-semiconductor interface. Byassuming different scenarios for their distribution, it was quantitatively shown thatannealing causes the diffusion of In and Ga up to the TiO2 layer. For the sampleannealed at 500 °C, only the diffusion of indium was clearly observed, while for thesample annealed at 700 °C the diffusion of both In and Ga to the TiO2 layer wasevident. The quantitative analysis showed smaller diffusion of gallium (~ 0.12 ML) thanof indium (~ 0.26 ML) at 700 °C/10 s. Since the quantification was done at differenttemperatures, it was possible to obtain an approximate value of the activation energyfor the diffusion of indium through zirconia. The value resulted to be very similar topreviously reported values for indium diffusion through alumina and through hafnia.~ vi ~Complementary techniques as high resolution transmission electron microscopy (HRTEM),energy dispersive x-ray spectroscopy (EDX) and time of flight secondary ion massspectrometry (TOF-SIMS) were used to complement the results obtained with ARXPS.Specially, TOF-SIMS highlighted the phenomenon of diffusion of the substrate atomicspecies to the surface
Compuestos semiconductores III-V, en particular InxGa1-xAs, son consideradosmateriales atractivos para reemplazar el silicio en estructuras metal-oxidosemiconductor(MOS). Su alta movilidad y flexible ancho de banda, requisitos para eldiseño de dispositivos de alto rendimiento, han colocado al InxGa1-xAs como uncandidato prometedor. Sin embargo, la estabilidad térmica en la interfazdieléctrico/InxGa1-xAs es mucho más compleja que aquella formada en la estructuraSiO2/Si. Mientras que la mayoría de los estudios se centran en diversos métodos depasivación tales como el crecimiento de las capas intermedias (Si, Ge y Si/Ge) y/otratamientos químicos para mejorar la calidad de la interfaz, fenómenos como ladifusión de las especies atómicas del sustrato como consecuencia del recocido no hansido cuidadosamente estudiados. Los tratamientos térmicos, los cuales estánrelacionados con los procesos de integración de la fuente y el drenador (S/D) en undispositivo MOSFET, conducen a cambios estructurales que degradan el rendimientoeléctrico de un dispositivo MOS. Una caracterización apropiada de las alteracionesestructurales asociadas con la difusión de los elementos del substrato hacia las capassuperiores es importante para entender cuáles son los mecanismos de falla en undispositivo MOS. En este trabajo se presenta un análisis de la estructura y laestabilidad térmica de la estructura TiN/ZrO2/InGaAs por la espectroscopía defotoelectrones por rayos X con resolución angular (ARXPS). A través de un método deanálisis no destructivo, fue posible observar efectos sutiles tales como la difusión delas especies atómicas del sustrato a través del dieléctrico como consecuencia delrecocido. El conocimiento detallado de la estructura permitió evaluar los perfiles deprofundidad para las componentes de In-O y Ga-O por medio del método deescenarios. Para la muestra en estado como se depositó, las componentes de In-O yGa-O fueron localizadas en la interfaz óxido-semiconductor. Después del recocido, semuestra cuantitativamente que éste causa la difusión de átomos de In y Ga hacia a lascapas superiores. Asumiendo diferentes escenarios para su distribución, se muestraque el recocido provoca la difusión de In y Ga hasta la capa de TiO2. Para la muestrarecocida a 500 °C, se observó claramente la difusión de indio, mientras que para lamuestra recocida a 700 °C tanto In y Ga difunden a la capa de TiO2. El análisis~ iv ~cuantitativo mostró que existe menor difusión de átomos de galio (0.12 ML) que deindio (0.26 ML) a 700 °C/10 s. Puesto que el análisis sobre la cantidad de materialdifundido se realizó a diferentes temperaturas, fue posible obtener un valoraproximado para la energía de activación del indio a través del ZrO2. El valor resultóser muy similar a los valores reportados previamente para la difusión de indio a travésde Al2O3 y a través de HfO2. Con el fin de correlacionar los resultados obtenidos porARXPS, se emplearon técnicas complementarias como la microscopía electrónica detransmisión (TEM), la espectroscopía de energía dispersiva (EDX) y la espectrometríade masas de iones secundarios por tiempo de vuelo (SIMS-TOF). Particularmente, TOFSIMSdestacó el fenómeno de difusión de las especies atómicas sustrato hacia lasuperficie
Books on the topic "HRTEM"
Harold, Robbins. Die verfu hrten. Mu nchen: Wilhelm Heyne, 1987.
Find full textNesbø, Jo. Die Fa hrte: Kriminalroman. Berlin: List, 2009.
Find full textLezzi-Hafter, Adrienne. Der Eretria-Maler: Werke und Weggefa hrten. Mainz/Rhein: Philipp von Zabern, 1988.
Find full textLezzi-Hafter, Adrienne. Der Eretria-Maler: Werke und Weggefa hrten. Mainz/Rhein: Philipp von Zabern, 1988.
Find full textWeller, Manuela. Die soziale Positionierung der Ehefrau im Familienunternehmen: Eine Untersuchung in familiengefu hrten klein- und mittelsta ndischen Handwerksbetrieben. Wiesbaden: Gabler, 2009.
Find full textSizilien: Egadische, Pelagische & Liparische Inseln ; [Handbuch fu r individuelles Entdecken ; der komplette und bewa hrte Reisefu hrer fu r Sizilien, die Egadischen, Pelagischen und Liparischen Inseln]. 7th ed. Bielefeld: Reise-Know-How-Verl. Rump, 2010.
Find full textEsquisse de cours 11e année: Les grandes religions du monde: croyances, traditions et enjeux hrt3m. Vanier, Ont: CFORP, 2006.
Find full textWorld religions: beliefs, issues, and religious traditions: Course profile, grade 11, university/college preparation HRT3M. [Ontario]: Queen's Printer for Ontario, 2001.
Find full textEsquisse de cours 11e année: Les grandes religions du monde: croyances, traditions et enjeux hrt3m. Vanier, Ont: CFORP, 2006.
Find full textSzonn, Sabine. Die Haftung Wegen Rechtsgutsverletzungen in Den Fallen Der (So) Nicht Verhinderten Und Der Vorsatzlich Herbeigef¨ Hrten Empfangnis (Europaische Hochschulschriften). Peter Lang Publishing, 2005.
Find full textBook chapters on the topic "HRTEM"
Hovmöller, Sven. "Structure Solution Using HRTEM." In NATO Science for Peace and Security Series B: Physics and Biophysics, 293–301. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-5580-2_27.
Full textAvalos-Borja, M., F. A. Ponce, and K. Heinemann. "HRTEM of Decahedral Gold Particles." In Springer Proceedings in Physics, 83–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-76376-2_11.
Full textWilliams, David B., and C. Barry Carter. "Quantifying and Processing HRTEM Images." In Transmission Electron Microscopy, 499–527. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-2519-3_30.
Full textRavindra, N. M., D. Fathy, O. W. Holland, and J. Narayan. "Si — SiO2 Interfaces — a Hrtem Study." In The Physics and Technology of Amorphous SiO2, 279–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_38.
Full textVeblen, D. R., and J. M. Cowley. "Direct Imaging of Point Defects by HRTEM." In Advanced Mineralogy, 172–75. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-78523-8_8.
Full textKienzle, O., and F. Ernst. "Analysis of interface structures by quantitative HRTEM." In Electron Microscopy and Analysis 1997, 457–62. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003063056-119.
Full textHenry, C. E., C. Chapon, J. M. Penisson, and G. Nihoul. "Structure of small palladium particles studied by HRTEM." In Small Particles and Inorganic Clusters, 145–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74913-1_33.
Full textde Jong, A. F. "Image Processing Applied to HRTEM Images of Interfaces." In Evaluation of Advanced Semiconductor Materials by Electron Microscopy, 19–31. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0527-9_2.
Full textAllen, Fred M. "Chapter 8. MINERAL DEFINITION BY HRTEM: PROBLEMS AND OPPORTUNITIES." In Minerals and Reactions at the Atomic Scale, edited by Peter R. Buseck, 289–334. Berlin, Boston: De Gruyter, 1992. http://dx.doi.org/10.1515/9781501509735-012.
Full textWang, Wen Yan, Jing Pei Xie, Wei Li, and Zhong Xia Liu. "HRTEM Analysis of Aging Electrolytic Low-Ti Al Alloy." In Materials Science Forum, 1015–20. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-432-4.1015.
Full textConference papers on the topic "HRTEM"
Kim, M. J. "HRTEM for Nano-Electronic Materials Research." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2063018.
Full textOhnishi, Naoyuki, Yuji Nonomura, Yasushi Ogasaka, Yuzuru Tawara, Yoshiharu Namba, and Kojun Yamashita. "HRTEM analysis of Pt/C multilayers." In Optical Science and Technology, SPIE's 48th Annual Meeting, edited by Oberto Citterio and Stephen L. O'Dell. SPIE, 2004. http://dx.doi.org/10.1117/12.508632.
Full textTaylor, S. "HRTEM image simulations for gate oxide metrology." In The 2000 international conference on characterization and metrology for ULSI technology. AIP, 2001. http://dx.doi.org/10.1063/1.1354384.
Full textKaushik, V. S., L. Prabhu, A. Anderson, and J. Conner. "HRTEM as a metrology tool in ULSI processing." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56878.
Full textTaylor, S. "HRTEM image simulations of structural defects in gate oxides." In The 2000 international conference on characterization and metrology for ULSI technology. AIP, 2001. http://dx.doi.org/10.1063/1.1354383.
Full textScott, John Henry J. "Determination of Factors Affecting HRTEM Gate Dielectric Thickness Measurement Uncertainty." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology. AIP, 2003. http://dx.doi.org/10.1063/1.1622494.
Full textObraztsova, E. D. "Raman and HRTEM Monitoring of Thermal Modification of HipCO Nanotubes." In MOLECULAR NANOSTRUCTURES: XVII International Winterschool Euroconference on Electronic Properties of Novel Materials. AIP, 2003. http://dx.doi.org/10.1063/1.1628021.
Full textPlachinda, Paul, Sergei Rouvimov, and Raj Solanki. "Structure analysis of CVD graphene films based on HRTEM contrast simulations." In 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2011. http://dx.doi.org/10.1109/nano.2011.6144403.
Full textZhang, Zaoli. "Study on Ca segregation toward BiFeO3 –SrTiO3 Interface by HRTEM/STEM." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1473.
Full textRai, Raghaw, James Conner, Sharon Murphy, and Swaminathan Subramanian. "Challenges in Evaluating Thickness, Phase, and Strain in Semiconductor Devices Using High Resolution Transmission Electron Microscopy." In ISTFA 2006. ASM International, 2006. http://dx.doi.org/10.31399/asm.cp.istfa2006p0343.
Full textReports on the topic "HRTEM"
Hemker, Kevin J., and Mingwei Chen. Experimental Determination of Dislocation Core Structures by HRTEM. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada388647.
Full textNewcomer, P. P., E. L. Venturini, B. L. Doyle, H. Schoene, and K. E. Myers. HRTEM of extended defects in Tl-2212 thin films. Office of Scientific and Technical Information (OSTI), February 1997. http://dx.doi.org/10.2172/432995.
Full textBarker, W. W., and J. F. Banfield. HRTEM investigations between minerals, fluids and lithobiontic communities during natural weathering. Progress report, September 1, 1993--August 31, 1994. Office of Scientific and Technical Information (OSTI), November 1994. http://dx.doi.org/10.2172/10195957.
Full textBanfield, J. F., and W. W. Barker. HRTEM investigations between minerals, fluids and lithobiontic communities during natural weathering. Progress report, September 1, 1993--February 28, 1994. Office of Scientific and Technical Information (OSTI), February 1994. http://dx.doi.org/10.2172/10169540.
Full textVeblen, D. R., and E. S. Ilton. HRTEM/AEM study of trace metal behavior, sheet silicate reactions, and fluid/solid mass balances in porphyry copper hydrothermal systems. Office of Scientific and Technical Information (OSTI), April 1989. http://dx.doi.org/10.2172/6956149.
Full textVeblen, D. R., and E. S. Ilton. HRTEM/AEM and SEM study of fluid-rock interactions: Interaction of copper, silver, selenium, chromium, and cadmium-bearing solutions with geological materials at near surface conditions, with an emphasis on phyllosilicates. Office of Scientific and Technical Information (OSTI), May 1992. http://dx.doi.org/10.2172/7075474.
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