Relevant bibliographies by topics / HRTEM

Academic literature on the topic 'HRTEM'

Author: Grafiati
Published: 4 June 2021
Last updated: 30 May 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'HRTEM.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "HRTEM"

1

Howe, J. M. "Quantitative in situ hot-stage high-resolution Transmission Electron Microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 758–59. http://dx.doi.org/10.1017/s0424820100171523.

Full text
Abstract:
In situ hot-stage high-resolution transmission electron microscopy (HRTEM) provides unique capabilities for quantifying the dynamics of interfaces at the atomic level. Such information complements detailed static observations and calculations of interfacial structure, and is essential for understanding interface theory and solid-state phase transformations. This paper provides a brief description of particular requirements for performing in situ hot-stage HRTEM and illustrates the use of this technique to obtain quantitative data on the atomic mechanisms and kinetics of interface motion during precipitation of {111} θ phase in an Al-Cu-Mg-Ag alloy.The specimen and microscope requirements for in situ hot-stage HRTEM are not much different from those of static HRTEM, except that one must have a heating holder and equipment for recording and analyzing dynamic images. At present, most HRTEMs are equipped with a TV-rate camera, possibly combined with a charge-coupled device camera. An inexpensive way to record in situ HRTEM images is to send the output from the TV-rate camera directly into a standard VHS format videocassette recorder (VCR).
APA, Harvard, Vancouver, ISO, and other styles
2

Lakshmi, R. Radha, D. Sruthi, K. Prithiv, S. Harippriya, and K. R. Aranganayagam. "Synthesis of ZnO and Ag/ZnO Nanorods: Characterization and Synergistic In Vitro Biocidal Studies." Advanced Science Letters 24, no. 8 (August 1, 2018): 5490–95. http://dx.doi.org/10.1166/asl.2018.12135.

Full text
Abstract:
The ZnO semiconductor has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) and direct wide band gap (3.72 eV). ZnO and Ag doped ZnO (Agx Zn1−xO (where x = 0.01, 0.02 and 0.03)) were synthesized by using soft chemical route. The synthesized materials were characterized by using XRD, HRSEM, EDS and HRTEM. The powder XRD pattern indicates that the ZnO and Agx Zn1−xO (where x = 0.01, 0.02 and 0.03) samples exhibits hexagonal wurtzite structure and also the Ag doping decreases the grain size of ZnO nano particles. The micro structural characterizations (HRSEM and HRTEM) reveal the incorporation of Ag into the ZnO lattice and also the formation of nano rods. At the length, the antimicrobial response was also brought against human pathogenic Gram +ve (S. aureus), Gram −ve (E. coli) bacteria and Fungi (C. albicans). Thus the above work brings out the presence of antimicrobial response against the microbes from these nano composites.
APA, Harvard, Vancouver, ISO, and other styles
3

Xing, Y. T., L. Y. Liu, D. F. Franceschini, W. C. Nunes, D. J. Smith, and I. G. Solorzano. "HRTEM and HRSTEM Study of Nanostructured Materials Prepared by Pulsed Laser Deposition." Microscopy and Microanalysis 22, S3 (July 2016): 2012–13. http://dx.doi.org/10.1017/s1431927616010904.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Arumugam, J., A. Dhayal Raj, and A. Albert Irudayaraj. "Morphology Manipulation and Related Properties of High Crystalline Bi2S3 Nanorods by Reflux Approach." Volume 4,Issue 5,2018 4, no. 5 (November 12, 2018): 524–26. http://dx.doi.org/10.30799/jnst.159.18040516.

Full text
Abstract:
One dimensional Bi2S3 nanorods have been successfully synthesized by a very simple reflux method with different precursor concentration for 2 hours at 180 �C. The as-synthesized Bi2S3 powders were characterized by X-ray diffraction (XRD), high resolution scanning electron microscope (HRSEM), high resolution transmission microscope (HRTEM), UV-Vis spectrometer, Fourier transform infrared (FTIR) spectrometer. X-ray diffraction (XRD) results show that the resulting nanocrystals have an orthorhombic structure. X-ray diffraction patterns indicate a polycrystalline nature and the crystallite sizes seem increase with increase in the concentration. The HRSEM and HRTEM images reveal that the diameter of the nanorods increase with increasing concentration of the precursor. Morphological analysis reveals that the as-prepared Bi2S3 nanorods can be tuned to morphology by varying precursor concentration from 0.01 M to 0.001 M. The bismuth nitrate, which is known to be a linear polymer, plays a critical role as a precursor and a template for the growth of uniform Bi2S3 nanorods. Bi2S3 nanorods are good absorbents of solar radiation and hence can be used in solar cells.
APA, Harvard, Vancouver, ISO, and other styles
5

Barman, Jayanta, Archana Das, Bapan Banik, and Farhana Sultana. "Optimizing ZnO/CdS Nano Composite Controlled by Fe Doping Towards Efficiency in Water Treatment and Antimicrobial Activity." Current World Environment 16, no. 3 (December 31, 2021): 726–32. http://dx.doi.org/10.12944/cwe.16.3.6.

Full text
Abstract:
Nanocrystalline composite zinc oxide (ZnO) and CdS with Fe doping thin films grown on glass substrate by chemical method. The parameters like temperature of the solution, UV exposure, pH of solution, immersion time, immersion cycles, have been controlled and standardized for nanocrystalline film. The synthesis NPs were analyzed by X-ray diffraction (XRD). Rietveld method shows that Fe-doped composite ZnO/CdS is a single pure phase and wurtzite structure. Samples were analyzed by sophisticated various instrument like XRD, UV- Visible spectrometer, HRTEM, HRSEM and composition was analyzed by EDX attached with HRTEM. The band gap was calculated by absorption spectroscopy and found that absorption was blue-shifted. The electron structure shows that doping changes the crystal structure and transition level create better efficiency and creates octahedral symmetry. The antibacterial studies showed that the 5.0 wt% Fe-doped exhibited maximum antibacterial effect.
APA, Harvard, Vancouver, ISO, and other styles
6

Howe, J. M., T. M. Murray, K. T. Moore, A. A. Csontos, M. M. Tsai, A. Garg, and W. E. Benson. "Understanding Interphase Boundary Dynamics by In Situ High-Resolution and Energy-Filtering Transmission Electron Microscopy and Real-Time Image Simulation." Microscopy and Microanalysis 4, no. 3 (June 1998): 235–47. http://dx.doi.org/10.1017/s1431927698980230.

Full text
Abstract:
This study discusses the use of in situ high-resolution transmission electron microscropy (HRTEM) techniques to determine the structure, composition, and interphase boundary dynamics during phase transformations at the atomic level. Three main in situ HRTEM techniques are described: (1) in situ HRTEM dynamic studies that are performed on the same precipitate plates from different viewing directions to determine the three-dimensional structure of the interfaces; (2) in situ compositional mapping of precipitate interfaces obtained by energy-filtering TEM experiments at temperature in a HRTEM, and (3) real-time HRTEM image simulations that are being created for comparison with and interpretation of experimental in situ HRTEM dynamic observations. The results from these studies demonstrate that it is possible to understand the mechanisms and kinetics of interphase boundary motion at the atomic level.
APA, Harvard, Vancouver, ISO, and other styles
7

Cohen, Dov, Geoffrey H. Campbell, Wayne E. King, and C. Barry Carter. "Quantitative Hrtem of Twin Boundaries in Compound Semiconductors and Metals Using Non-Linear Least-Squares Methods." Microscopy and Microanalysis 4, S2 (July 1998): 784–85. http://dx.doi.org/10.1017/s1431927600024041.

Full text
Abstract:
The analysis of the atomic structure of grain boundaries is often performed through the use of high-resolution transmission electron microscopy (HRTEM). A complication of the HRTEM technique is the inability to analyze directly the experimental images in order to determine projected atomic models of lattice defects. Since contrast features in HRTEM images, in general, do not correspond directly to atomic positions, experimental images are typically evaluated qualitatively through comparison with image simulation. Recently, the interest in quantitatively measuring the atomic structure of internal interfaces for comparison with theoretical calculations has motivated the development of computational methodologies to analyze HRTEM images.123 In this paper, the quantitative analysis of HRTEM images of twin boundaries in semiconductors and metals is described.AΣ=3 coherent twin boundary in GaP was imaged along the <110> zone in a JEOL-4000EX HRTEM at Sandia National Laboratories, Livermore.
APA, Harvard, Vancouver, ISO, and other styles
8

González, Gema, Werner Stracke, Zoraya Lopez, Ulrike Keller, Andrea Ricker, and Rudolf Reichelt. "Characterization of Defects and Surface Structures in Microporous Materials by HRTEM, HRSEM, and AFM." Microscopy and Microanalysis 10, no. 02 (March 17, 2004): 224–35. http://dx.doi.org/10.1017/s1431927604040097.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Pailloux, Frédéric, Marie-Laure David, and Laurent Pizzagalli. "Quantitative HRTEM investigation of nanoplatelets." Micron 41, no. 2 (February 2010): 135–42. http://dx.doi.org/10.1016/j.micron.2009.09.005.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Ohnishi, N., T. Ohsuna, Y. Sakamoto, O. Terasaki, and K. Hiraga. "Quantitative HRTEM study of zeolite." Microporous and Mesoporous Materials 21, no. 4-6 (May 1998): 581–88. http://dx.doi.org/10.1016/s1387-1811(98)00026-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "HRTEM"

1

Geipel, Thomas. "Applications of HRTEM in materials science problems and dislocation simulations." Case Western Reserve University School of Graduate Studies / OhioLINK, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=case1057163293.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Dickinson, Calum. "Metal oxide porous single crystals and other nanomaterials : an HRTEM study." Thesis, University of St Andrews, 2007. http://hdl.handle.net/10023/217.

Full text
Abstract:
Three-dimensional porous single crystals (PSCs) are a recent development in the growing world of mesoporous material. The mesoporosity allows for the material to retain their nanoproperties whilst being bulk in size. The current work concentrates on chromium oxide and cobalt oxide PSCs formed in the templates SBA-15 and KIT-6. HRTEM is the main technique used in this investigation, looking at the morphology and single crystallinity of these materials. A growth mechanism for the PSC material is proposed based on HRTEM observations. XRD studies revealed that the confinement effect, caused by the mesopores, reduces the temperature for both cobalt and chromium oxide crystallisation, as well as a different intermediate route from the metal nitrates. The properties of chromium oxide PSC are also investigated magnetically and catalytically. Some metal oxides in different templates are also presented, despite no PSC forming. HRTEM work on other nanomaterials, based on collaboration, is also presented.
APA, Harvard, Vancouver, ISO, and other styles
3

Senapati, Sephalika. "Evolution of Lamellar Structures in AL-AG Alloys." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3067.

Full text
Abstract:
In the present study, the formation and the evolution of lamellar structures in different Al-Ag alloys were investigated by transmission electron microscopy (TEM). Plates of the hexagonal [gamma] phase form semi-coherently on the {111} planes of the face centered cubic lattice of the alloy after the formation of Guinier-Preston zones. Guinier-Preston zones are metastable coherent preprecipitates which are silver rich in the aluminum-rich Al-Ag alloys. The decomposition of aluminum rich Al-Ag alloys, particularly the sequence of the later stages of precipitate formation was studied. With scanning electron microscopy and high-resolution transmission electron microscopy the development of the [gamma] phase was investigated. Samples cut from different Al-Ag alloys were homogenized at temperatures between 530 degrees C to 560 degrees C to obtain a single phase f.c.c solid solution. The samples were then quenched to room temperature, followed by heat treatments at temperatures between 140 degrees C and 220 degrees C for varying lengths of times. While Guinier-Preston zones increase in diameter with increasing aging duration, silver rich platelets of the [gamma] phase form. The [gamma] phase is the next metastable phase in the decomposition sequence before finally the [gamma] phase transforms to the stable silver-rich phase, termed [gamma]. For samples with silver contents above 12 at.% a parallel lamellar alignment of fine [gamma] plates and Alrich matrix is found after extended heat treatments. For all alloys with Ag concentrations below 12 at.% individual [gamma] plates are found on all four possible (111) planes of the [alpha] matrix. A method is presented to calibrate the medium-magnification high-angle annular dark-field contrast in scanning transmission electron microscopy. This calibration allows for the quantitative measurement of plate thicknesses from high-angle annular dark-field scanning transmission electron micrographs of Ag2Al plates inclined to the electron beam. Results from these measurements are in good agreement with direct bright-field micrographs of plates viewed edge-on.
M.S.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
APA, Harvard, Vancouver, ISO, and other styles
4

Saito, Mitsuhiro. "HRTEM investigations of structure and composition of polar Pd/ZnO heterophase interfaces." Stuttgart Max-Planck-Inst. für Metallforschung, 2005. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-25889.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Істратов, М. Є. "TEM–HRTEM дослідження структури наноламінатних (Al0.5Ti0.5)N/ZrN покриттів та перспективи застосування у біомедичній галузі." Master's thesis, Сумський державний університет, 2020. https://essuir.sumdu.edu.ua/handle/123456789/81695.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Muga, Ibarra Francisco Javier. "Comportamiento Mecánico y Microestructural de una Aleación Cu-1,8%p.Al-0,5%p.Be en el Rango Post-Superelástico." Tesis, Universidad de Chile, 2008. http://repositorio.uchile.cl/handle/2250/103146.

Full text
Abstract:
La aleación Cu-11,8%p.Al-0,5%p.Be presenta un comportamiento de Memoria de Forma (MF) del tipo Superelástico. Este último consiste en que al aplicar carga, dentro de ciertas condiciones, se tienen deformaciones relativamente importantes (2-8%) que se recuperan al retirar la carga. El fenómeno de MF se asocia a una transformación martensítica, la que involucra una fase madre austenita (β), de alta simetría, y a una fase metaestable martensita (β’), de baja simetría. En un ciclo de carga y descarga, las aleaciones superelásticas disipan energía. Este comportamiento de disipación y la capacidad de aceptar grandes deformaciones recuperables, da la potencialidad de que estos materiales puedan actuar como disipadores de energía, por ejemplo, en estructuras civiles. Según nuestro conocimiento, no existen estudios publicados de la aleación CuAlBe en el rango post-superelástico, donde ya hay deformaciones remanentes. De modo que para ese rango se desconoce la microestructura del material y de qué forma se comporta la disipación de energía. En este trabajo se analizaron cuatro casos de distinta deformación en la aleación CuAlBe, a temperatura ambiente y para un tamaño de grano de 100 um. En el primer caso se deformó una probeta en el rango superelástico (0,23% de deformación) mediante un ensayo monotónico. En el segundo caso se impuso una deformación del 6% en ensayos monotónico y cíclico (a dos distintas probetas), en el tercero se impuso una deformación del 9% en ensayos monotónico y cíclico (a dos distintas probetas); y en el cuarto se llevó una probeta hasta la fractura. En ensayos de tracción monotónicos, se determinó que el módulo de Young del material es de 88GPa, que la resistencia a la fractura es de 802MPa, y que la fractura corresponde a una deformación de 10.2%, con carga. También se determinó, mediante un método de derivadas, validado por información y datos de otros estudios, que el límite superelástico de esta aleación, a temperatura ambiente, corresponde a una deformación de 2.5%. Los resultados anteriores son concordantes con estudios anteriores. En ensayos de tracción cíclicos (0,5 y 1 Hz) se encontró que en el rango post-superelástico existe elasticidad no lineal y amortiguamiento, siendo este último mayor que en el rango superelástico. Se obtuvo metalografías de los distintos casos de deformación ya definidos. En el primer caso, dentro del rango superelástico, no se observó martensita remanente, solo austenita, como era de esperar. Por otra parte, en los casos 2, 3 y 4, en el rango post-superelástico, se observó austenita con martensita remanente y que la fracción de esta última crecía con la deformación impuesta. En la fractografías del caso 4, se observó preferentemente fractura transgranular, con zonas de clivaje y otras de hoyuelos, lo cual es un resultado conocido. En microscopia electrónica de transmisión, se observó muestras vírgenes y con deformación. En ambos tipos de muestra se estableció que la austenita presenta finas franjas, las que corresponderían a defectos cristalinos que podrían estar relacionados con manchas de difracción alargadas adicionales al patrón de difracción BCC de esa fase. En muestras con deformación, en la austenita se observó dislocaciones apareadas, denominadas dislocaciones de superred; además se observaron franjas gruesas en la austenita que es posible que sean vestigios de placas revertidas de martensita inducidas por deformación. Se concluye que la elasticidad no lineal observada en el rango post-superelástico se asocia a la austenita aún presente en ese rango, la que podría transformarse por esfuerzo en martensita. Además, el mayor amortiguamiento observado en el rango post-superelástico, en relación con aquel en el rango elástico, estaría relacionado con los defectos cristalinos observados en la austenita, al requerir ellos una mayor energía para que ocurra la transformación martensítica.
APA, Harvard, Vancouver, ISO, and other styles
7

Kurasch, Simon [Verfasser]. "Atom-by-atom observations on defect formation and dynamics in 2D materials studied by HRTEM / Simon Kurasch." Ulm : Universität Ulm. Fakultät für Naturwissenschaften, 2014. http://d-nb.info/1046623370/34.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Chen, Qu. "Structural studies of defects in two-dimensional materials with atomic resolution." Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:392f2b1d-0488-4d10-96d9-817def04db2a.

Full text
Abstract:
Defective structures in two-dimensional (2D) materials have been proved to have significant influences on the materials' properties. Understanding structural defects in 2D materials at atomic scale is therefore required. With the use of advanced imaging techniques, one of the main approaches applied in this project was aberration-corrected transmission electron microscopy (AC-TEM), the structures are able to be resolved with single-atom sensitivity with the reduction of both spherical aberration and the influence of chromatic aberration. This laid the foundation for the first two experiments, which involve the bond length measurement of each C-C bond within three types of divacancies and Si-C bonds at graphene edges. The former explains the tendency of bond rotations within the divacancies from the perspective of strain inside the defective areas and surrounding lattice; the latter revels the interactions between isolated Si atoms and zigzag/armchair graphene edges. The use of in-situ heating holder in the AC-TEM makes the direct visualization of structures and their dynamics at elevated temperatures possible. The Si-graphene edge interactions, as well as the following two experiments are all designed to study the high-temperature performances for different systems. Gold nanoclusters are introduced to monolayer graphene by thermal evaporation to study the interaction between gold and graphene at elevated temperature. Due to the strong interaction between gold and graphene, gold crystals are able to adapt to planar configurations with two different crystalline forms, and an epitaxial relationship was found for planar gold crystals and graphene. Atomically flat and long line defects and zigzag edges in monolayer molybdenum disulfide (MoS2) are successfully created by in-situ thermal annealing. The relationship between S vacancy mobility and defect forms are revealed based on the experiment. High-temperature atomic configurations of line defects and edge terminations are resolved in the first time. Their electronic properties are also explored with the support of density functional theory calculations.
APA, Harvard, Vancouver, ISO, and other styles
9

Ma, Yanhang. "Structural study of nano-structured materials: electron crystallography approaches." Doctoral thesis, Stockholms universitet, Institutionen för material- och miljökemi (MMK), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:su:diva-129233.

Full text
Abstract:
The structural analysis serves as a bridge to link the structure of materials to their properties. Revealing the structure details allows a better understanding on the growth mechanisms and properties of materials, and a further designed synthesis of functional materials. The widely used methods based on X-ray diffraction have certain limitations for the structural analysis when crystals are small, poorly crystallized or contain many defects. As electrons interact strongly with matter and can be focused by electromagnetic lenses to form an image, electron crystallography (EC) approaches become prime candidates for the structural analysis of a wide range of materials that cannot be done using X-rays, particularly nanomaterials with poor crystallinity. Three-dimensional electron diffraction tomography (3D EDT) is a recently developed method to automatically collect 3D electron diffraction data. By combining mechanical specimen tilt and electronic e-beam tilt, a large volume of reciprocal space can be swept at a fine step size to ensure the completeness and accuracy of the diffraction data with respect to both position and intensity. Effects of the dynamical scattering are enormously reduced as most of the patterns are collected at conditions off the zone axes. In this thesis, 3D EDT has been used for unit cell determination (COF-505), phase identifications and structure solutions (ZnO, Ba-Ta3N5, Zn-Sc, and V4O9), and the study of layer stacking faults (ETS-10 and SAPO-34 nanosheets). High-resolution transmission electron microscope (HRTEM) imaging shows its particular advantages over diffraction by allowing observations of crystal structure projections and the 3D potential map reconstruction. HRTEM imaging has been used to visualize fine structures of different materials (hierarchical zeolites, ETS-10, and SAPO-34). Reconstructed 3D potential maps have been used to locate the positions of metal ions in a woven framework (COF-505) and elucidate the pore shape and connectivity in a silica mesoporous crystal. The last part of this thesis explores the combination with X-ray crystallography to obtain more structure details.
APA, Harvard, Vancouver, ISO, and other styles
10

Ceballos, Sanchez Oscar. "Stabilité thermique de structures de type TiN/ZrO2/InGaAs." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAY027/document.

Full text
Abstract:
Les semiconducteurs composés III-V, et en particulier l’InGaAs, sont considéréscomme une alternative attractive pour remplacer le Silicium (Si) habituellement utilisépour former le canal dans les dispositifs Métal-Oxide-Semiconducteur (MOS). Sa hautemobilité électronique et sa bande interdite modulable, des paramètres clés pourl’ingénierie de dispositifs à haute performance, ont fait de l’InGaAs un candidatprometteur. Cependant, la stabilité thermique et la chimie des interfaces desdiélectriques high-k sur InGaAs est beaucoup plus complexe que sur Si. Tandis que laplupart des études se concentrent sur diverses méthodes de passivation, telles que lacroissance de couches passivantes d’interface (Si, Ge, et Si/Ge) et/ou le traitementchimique afin d’améliorer la qualité de l’interface high-k/InGaAs, les phénomènes telsque la diffusion d’espèces atomiques provenant du substrat dus aux traitementsthermiques n’ont pas été étudiés attentivement. Les traitements thermiques liés auxprocédés d’intégration de la source (S) et du drain (D) induisent des changementsstructurels qui dégradent les performances électriques du dispositif MOS. Unecaractérisation adaptée des altérations structurelles associées à la diffusion d’élémentsdepuis la surface du substrat est importante afin de comprendre les mécanismes defaille. Dans ce travail, une analyse de la structure ainsi que de la stabilité thermiquedes couches TiN/ZrO2/InGaAs par spectroscopie de photoélectrons résolue en angle(ARXPS) est présentée. Grâce à cette méthode d’analyse non destructive, il a étépossible d’observer des effets subtils tels que la diffusion d’espèces atomiques àtravers la couche diélectrique due au recuit thermique. A partir de la connaissance dela structure des couches, les profils d’implantation d’In et de Ga ont pu être estiméspar la méthode des scenarios. L’analyse de l’échantillon avant recuit thermique apermis de localiser les espèces In-O et Ga-O à l’interface oxide-semiconducteur. Aprèsrecuit, les résultats démontrent de façon quantitative que le recuit thermique cause ladiffusion de In et Ga vers les couches supérieures. En considérant différents scénarios,il a pu être démontré que la diffusion d’In et de Ga induite par le recuit atteint lacouche de TiO2. Dans le cas où l’échantillon est recuit à 500 °C, seule la diffusion d’Inest clairement observée, tandis que dans le cas où l’échantillon est recuit à 700 °C, onobserve la diffusion d’In et de Ga jusqu’à la couche de TiO2. L’analyse quantitative~ viii ~montre une diffusion plus faible de Gallium (~ 0.12 ML) que d’Indium (~ 0.26 ML) à 700°C /10 s. L’analyse quantitative en fonction de la température de recuit a permisd’estimer la valeur de l’énergie d’activation pour la diffusion d’Indium à travers leZircone. La valeur obtenue est très proche des valeurs de diffusion de l’Indium àtravers l’alumine et l’hafnia précédemment rapportées. Des techniquescomplémentaires telles que la microscopie électronique en transmission à hauterésolution (HR-TEM), la spectroscopie X à dispersion d’énergie (EDX) et laspectrométrie de masse à temps de vol (TOF-SIMS) ont été utilisés pour corréler lesrésultats obtenus par ARXPS. En particulier, la TOF-SIMS a révélé le phénomène dediffusion des espèces atomiques vers la surface
III-V compound semiconductors, in particular InGaAs, are considered attractivealternative channel materials to replace Si in complementary metal-oxidesemiconductor(MOS) devices. Its high mobility and tunable band gap, requirementsfor high performance device design, have placed InGaAs as a promising candidate.However, the interfacial thermal stability and chemistry of high-k dielectrics on InGaAsis far more complex than those on Si. While most studies are focused on variouspassivation methods, such as the growth of interfacial passivation layers (Si, Ge, andSi/Ge) and/or chemical treatments to improve the quality of high-k/InGaAs interface,phenomena such as the out-diffusion of atomic species from the substrate as aconsequence of the thermal treatments have not been carefully studied. The thermaltreatments, which are related with integration processes of source and drain (S/D),lead to structural changes that degrade the electrical performance of the MOS device.A proper characterization of the structural alterations associated with the out-diffusionof elements from the substrate is important for understanding failure mechanisms. Inthis work it is presented an analysis of the structure and thermal stability ofTiN/ZrO2/InGaAs stacks by angle-resolved x-ray photoelectron spectroscopy (ARXPS).Through a non-destructive analysis method, it was possible to observe subtle effectssuch as the diffusion of substrate atomic species through the dielectric layer as aconsequence of thermal annealing. The knowledge of the film structure allowed forassessing the In and Ga depth profiles by means of the scenarios-method. For the asdeposited sample, In-O and Ga-O are located at the oxide-semiconductor interface. Byassuming different scenarios for their distribution, it was quantitatively shown thatannealing causes the diffusion of In and Ga up to the TiO2 layer. For the sampleannealed at 500 °C, only the diffusion of indium was clearly observed, while for thesample annealed at 700 °C the diffusion of both In and Ga to the TiO2 layer wasevident. The quantitative analysis showed smaller diffusion of gallium (~ 0.12 ML) thanof indium (~ 0.26 ML) at 700 °C/10 s. Since the quantification was done at differenttemperatures, it was possible to obtain an approximate value of the activation energyfor the diffusion of indium through zirconia. The value resulted to be very similar topreviously reported values for indium diffusion through alumina and through hafnia.~ vi ~Complementary techniques as high resolution transmission electron microscopy (HRTEM),energy dispersive x-ray spectroscopy (EDX) and time of flight secondary ion massspectrometry (TOF-SIMS) were used to complement the results obtained with ARXPS.Specially, TOF-SIMS highlighted the phenomenon of diffusion of the substrate atomicspecies to the surface
Compuestos semiconductores III-V, en particular InxGa1-xAs, son consideradosmateriales atractivos para reemplazar el silicio en estructuras metal-oxidosemiconductor(MOS). Su alta movilidad y flexible ancho de banda, requisitos para eldiseño de dispositivos de alto rendimiento, han colocado al InxGa1-xAs como uncandidato prometedor. Sin embargo, la estabilidad térmica en la interfazdieléctrico/InxGa1-xAs es mucho más compleja que aquella formada en la estructuraSiO2/Si. Mientras que la mayoría de los estudios se centran en diversos métodos depasivación tales como el crecimiento de las capas intermedias (Si, Ge y Si/Ge) y/otratamientos químicos para mejorar la calidad de la interfaz, fenómenos como ladifusión de las especies atómicas del sustrato como consecuencia del recocido no hansido cuidadosamente estudiados. Los tratamientos térmicos, los cuales estánrelacionados con los procesos de integración de la fuente y el drenador (S/D) en undispositivo MOSFET, conducen a cambios estructurales que degradan el rendimientoeléctrico de un dispositivo MOS. Una caracterización apropiada de las alteracionesestructurales asociadas con la difusión de los elementos del substrato hacia las capassuperiores es importante para entender cuáles son los mecanismos de falla en undispositivo MOS. En este trabajo se presenta un análisis de la estructura y laestabilidad térmica de la estructura TiN/ZrO2/InGaAs por la espectroscopía defotoelectrones por rayos X con resolución angular (ARXPS). A través de un método deanálisis no destructivo, fue posible observar efectos sutiles tales como la difusión delas especies atómicas del sustrato a través del dieléctrico como consecuencia delrecocido. El conocimiento detallado de la estructura permitió evaluar los perfiles deprofundidad para las componentes de In-O y Ga-O por medio del método deescenarios. Para la muestra en estado como se depositó, las componentes de In-O yGa-O fueron localizadas en la interfaz óxido-semiconductor. Después del recocido, semuestra cuantitativamente que éste causa la difusión de átomos de In y Ga hacia a lascapas superiores. Asumiendo diferentes escenarios para su distribución, se muestraque el recocido provoca la difusión de In y Ga hasta la capa de TiO2. Para la muestrarecocida a 500 °C, se observó claramente la difusión de indio, mientras que para lamuestra recocida a 700 °C tanto In y Ga difunden a la capa de TiO2. El análisis~ iv ~cuantitativo mostró que existe menor difusión de átomos de galio (0.12 ML) que deindio (0.26 ML) a 700 °C/10 s. Puesto que el análisis sobre la cantidad de materialdifundido se realizó a diferentes temperaturas, fue posible obtener un valoraproximado para la energía de activación del indio a través del ZrO2. El valor resultóser muy similar a los valores reportados previamente para la difusión de indio a travésde Al2O3 y a través de HfO2. Con el fin de correlacionar los resultados obtenidos porARXPS, se emplearon técnicas complementarias como la microscopía electrónica detransmisión (TEM), la espectroscopía de energía dispersiva (EDX) y la espectrometríade masas de iones secundarios por tiempo de vuelo (SIMS-TOF). Particularmente, TOFSIMSdestacó el fenómeno de difusión de las especies atómicas sustrato hacia lasuperficie
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "HRTEM"

1

Harold, Robbins. Die verfu hrten. Mu nchen: Wilhelm Heyne, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Nesbø, Jo. Die Fa hrte: Kriminalroman. Berlin: List, 2009.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Lezzi-Hafter, Adrienne. Der Eretria-Maler: Werke und Weggefa hrten. Mainz/Rhein: Philipp von Zabern, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Lezzi-Hafter, Adrienne. Der Eretria-Maler: Werke und Weggefa hrten. Mainz/Rhein: Philipp von Zabern, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Weller, Manuela. Die soziale Positionierung der Ehefrau im Familienunternehmen: Eine Untersuchung in familiengefu hrten klein- und mittelsta ndischen Handwerksbetrieben. Wiesbaden: Gabler, 2009.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Sizilien: Egadische, Pelagische & Liparische Inseln ; [Handbuch fu r individuelles Entdecken ; der komplette und bewa hrte Reisefu hrer fu r Sizilien, die Egadischen, Pelagischen und Liparischen Inseln]. 7th ed. Bielefeld: Reise-Know-How-Verl. Rump, 2010.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Esquisse de cours 11e année: Les grandes religions du monde: croyances, traditions et enjeux hrt3m. Vanier, Ont: CFORP, 2006.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

World religions: beliefs, issues, and religious traditions: Course profile, grade 11, university/college preparation HRT3M. [Ontario]: Queen's Printer for Ontario, 2001.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

Esquisse de cours 11e année: Les grandes religions du monde: croyances, traditions et enjeux hrt3m. Vanier, Ont: CFORP, 2006.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Szonn, Sabine. Die Haftung Wegen Rechtsgutsverletzungen in Den Fallen Der (So) Nicht Verhinderten Und Der Vorsatzlich Herbeigef¨ Hrten Empfangnis (Europaische Hochschulschriften). Peter Lang Publishing, 2005.

Find full text
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "HRTEM"

1

Hovmöller, Sven. "Structure Solution Using HRTEM." In NATO Science for Peace and Security Series B: Physics and Biophysics, 293–301. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-5580-2_27.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Avalos-Borja, M., F. A. Ponce, and K. Heinemann. "HRTEM of Decahedral Gold Particles." In Springer Proceedings in Physics, 83–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-76376-2_11.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Williams, David B., and C. Barry Carter. "Quantifying and Processing HRTEM Images." In Transmission Electron Microscopy, 499–527. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-2519-3_30.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Ravindra, N. M., D. Fathy, O. W. Holland, and J. Narayan. "Si — SiO2 Interfaces — a Hrtem Study." In The Physics and Technology of Amorphous SiO2, 279–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_38.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Veblen, D. R., and J. M. Cowley. "Direct Imaging of Point Defects by HRTEM." In Advanced Mineralogy, 172–75. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-78523-8_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Kienzle, O., and F. Ernst. "Analysis of interface structures by quantitative HRTEM." In Electron Microscopy and Analysis 1997, 457–62. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003063056-119.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Henry, C. E., C. Chapon, J. M. Penisson, and G. Nihoul. "Structure of small palladium particles studied by HRTEM." In Small Particles and Inorganic Clusters, 145–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74913-1_33.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

de Jong, A. F. "Image Processing Applied to HRTEM Images of Interfaces." In Evaluation of Advanced Semiconductor Materials by Electron Microscopy, 19–31. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0527-9_2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Allen, Fred M. "Chapter 8. MINERAL DEFINITION BY HRTEM: PROBLEMS AND OPPORTUNITIES." In Minerals and Reactions at the Atomic Scale, edited by Peter R. Buseck, 289–334. Berlin, Boston: De Gruyter, 1992. http://dx.doi.org/10.1515/9781501509735-012.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Wang, Wen Yan, Jing Pei Xie, Wei Li, and Zhong Xia Liu. "HRTEM Analysis of Aging Electrolytic Low-Ti Al Alloy." In Materials Science Forum, 1015–20. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-432-4.1015.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "HRTEM"

1

Kim, M. J. "HRTEM for Nano-Electronic Materials Research." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2063018.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Ohnishi, Naoyuki, Yuji Nonomura, Yasushi Ogasaka, Yuzuru Tawara, Yoshiharu Namba, and Kojun Yamashita. "HRTEM analysis of Pt/C multilayers." In Optical Science and Technology, SPIE's 48th Annual Meeting, edited by Oberto Citterio and Stephen L. O'Dell. SPIE, 2004. http://dx.doi.org/10.1117/12.508632.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Taylor, S. "HRTEM image simulations for gate oxide metrology." In The 2000 international conference on characterization and metrology for ULSI technology. AIP, 2001. http://dx.doi.org/10.1063/1.1354384.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Kaushik, V. S., L. Prabhu, A. Anderson, and J. Conner. "HRTEM as a metrology tool in ULSI processing." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56878.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Taylor, S. "HRTEM image simulations of structural defects in gate oxides." In The 2000 international conference on characterization and metrology for ULSI technology. AIP, 2001. http://dx.doi.org/10.1063/1.1354383.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Scott, John Henry J. "Determination of Factors Affecting HRTEM Gate Dielectric Thickness Measurement Uncertainty." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology. AIP, 2003. http://dx.doi.org/10.1063/1.1622494.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Obraztsova, E. D. "Raman and HRTEM Monitoring of Thermal Modification of HipCO Nanotubes." In MOLECULAR NANOSTRUCTURES: XVII International Winterschool Euroconference on Electronic Properties of Novel Materials. AIP, 2003. http://dx.doi.org/10.1063/1.1628021.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Plachinda, Paul, Sergei Rouvimov, and Raj Solanki. "Structure analysis of CVD graphene films based on HRTEM contrast simulations." In 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2011. http://dx.doi.org/10.1109/nano.2011.6144403.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Zhang, Zaoli. "Study on Ca segregation toward BiFeO3 –SrTiO3 Interface by HRTEM/STEM." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1473.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Rai, Raghaw, James Conner, Sharon Murphy, and Swaminathan Subramanian. "Challenges in Evaluating Thickness, Phase, and Strain in Semiconductor Devices Using High Resolution Transmission Electron Microscopy." In ISTFA 2006. ASM International, 2006. http://dx.doi.org/10.31399/asm.cp.istfa2006p0343.

Full text
Abstract:
Abstract The aggressive scaling of metal oxide semiconductor field effect transistor (MOSFET) device features, including gate dielectrics, silicides, and strained Si channels, presents unique metrology and characterization challenges to control electrical properties such as reliability and leakage current. This paper describes challenges faced in measuring the thickness of thin gate oxides and interfacial layers found in high-K gate dielectrics, determining Ni silicide phase in devices, and characterizing strain in MOSFETs with SiGe stressors. From case studies, it has been observed that thin layers (gate oxide, high-K film thickness, and interfacial layer) can be measured using high-resolution transmission electron microscopy (HRTEM) with good accuracy but there are some challenges in the form of sample thickness, damage-free samples, and precise sectioning of the sample for site-specific specimens. Complementary information based on HRTEM, annular dark field, and image simulation should be used to check the accuracy of thin gate dielectric measurements.
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "HRTEM"

1

Hemker, Kevin J., and Mingwei Chen. Experimental Determination of Dislocation Core Structures by HRTEM. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada388647.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Newcomer, P. P., E. L. Venturini, B. L. Doyle, H. Schoene, and K. E. Myers. HRTEM of extended defects in Tl-2212 thin films. Office of Scientific and Technical Information (OSTI), February 1997. http://dx.doi.org/10.2172/432995.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Barker, W. W., and J. F. Banfield. HRTEM investigations between minerals, fluids and lithobiontic communities during natural weathering. Progress report, September 1, 1993--August 31, 1994. Office of Scientific and Technical Information (OSTI), November 1994. http://dx.doi.org/10.2172/10195957.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Banfield, J. F., and W. W. Barker. HRTEM investigations between minerals, fluids and lithobiontic communities during natural weathering. Progress report, September 1, 1993--February 28, 1994. Office of Scientific and Technical Information (OSTI), February 1994. http://dx.doi.org/10.2172/10169540.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Veblen, D. R., and E. S. Ilton. HRTEM/AEM study of trace metal behavior, sheet silicate reactions, and fluid/solid mass balances in porphyry copper hydrothermal systems. Office of Scientific and Technical Information (OSTI), April 1989. http://dx.doi.org/10.2172/6956149.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Veblen, D. R., and E. S. Ilton. HRTEM/AEM and SEM study of fluid-rock interactions: Interaction of copper, silver, selenium, chromium, and cadmium-bearing solutions with geological materials at near surface conditions, with an emphasis on phyllosilicates. Office of Scientific and Technical Information (OSTI), May 1992. http://dx.doi.org/10.2172/7075474.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'HRTEM' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography