Dissertations / Theses on the topic 'High vacuum'
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Gieseler, Jan. "Dynamics of optically levitated nanoparticles in high vacuum." Doctoral thesis, Universitat Politècnica de Catalunya, 2014. http://hdl.handle.net/10803/144555.
Full textCoaker, Brian M. "Mechanisms for triggering high-voltage breakdown in vacuum." Thesis, Aston University, 1995. http://publications.aston.ac.uk/8236/.
Full textBarreto, Suzana Maria. "Towards autonomous sample positioning for ultra high vacuum chambers." Thesis, Aberystwyth University, 2018. http://hdl.handle.net/2160/77e7f40d-eb63-4062-bc1f-e5e4e7d102a9.
Full textBeyer, Vivien. "A study of laser-induced incandescence under high vacuum conditions." Thesis, Cranfield University, 2006. http://hdl.handle.net/1826/1786.
Full textSchambach, Philip [Verfasser]. "Tip-enhanced Raman spectroscopy in ultra-high vacuum / Philip Schambach." Berlin : Freie Universität Berlin, 2013. http://d-nb.info/104348079X/34.
Full textBenwell, Andrew L. "Flashover prevention on polystyrene high voltage insulators in a vacuum." Diss., Columbia, Mo. : University of Missouri-Columbia, 2007. http://hdl.handle.net/10355/5018.
Full textThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on March 18, 2008) Includes bibliographical references.
Gieseler, Jan [Verfasser]. "Dynamics of optically levitated nanoparticles in high vacuum / Jan Gieseler." München : GRIN Verlag, 2015. http://d-nb.info/1175809705/34.
Full textPires, Ellis John. "Electrical conductivity of single organic molecules in ultra high vacuum." Thesis, Cardiff University, 2013. http://orca.cf.ac.uk/56796/.
Full textWoodburn, Charles N. "Development of low-temperature, ultra high vacuum, scanning tunnelling microscope." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264506.
Full textNick, Schwartz Nick (Nick Raoul). "Design and construction of high-temperature, high-vacuum tensile tester for fusion reactor materials." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/119939.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (pages 24-25).
Fusion energy is a promising carbon-free, limitless source of energy that could contribute to mitigating global climate change. One of the critical challenges in realizing fusion energy is the survival of structural materials in the extreme environment of a fusion device. Specifically, materials that surround the 100 million °C plasma must survive high temperatures (>500 °C), intense thermal cycling, transient high heat loads, large structural forces during off-normal plasma events, and exposure to high energy neutrons. Neutron exposure leads to high levels of radiation damage, which results in changes to critical material properties such as ductility and strength. In order to facilitate a better understanding of the effect of radiation on fusion material properties at high temperatures, a novel high-vacuum (<106 torr), high-temperature (<1000°C), tensile testing stand for irradiated specimens was designed and constructed. The test stand was designed to perform tensile testing of structural materials that have been irradiated by 12 MeV protons, which emulate the material response to high-energy neutrons produced in a deuterium-tritium burning fusion device. The specimen will then be heated to 500-1000 °C and tensile tested in high vacuum to eliminate sample oxidation and provide clean measurements. The design and fabrication of the test stand are given in this thesis, and first results from its commissioning are presented.
by Nick Schwartz.
S.B.
Schiappacasse, Enrico D. "Beyond Semiclassical Gravity| Quantum Stress Tensor Fluctuations in the Vacuum." Thesis, Tufts University, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10812605.
Full textLarge vacuum fluctuations of a quantum stress tensor can be described by the asymptotic behavior of its probability distribution. Here we focus on stress tensor operators which have been averaged with a sampling function in time. The Minkowski vacuum state is not an eigenstate of the time-averaged operator, but can be expanded in terms of its eigenstates. We calculate the probability distribution and the cumulative probability distribution for obtaining a given value in a measurement of the time-averaged operator taken in the vacuum state. In these calculations, we use the normal ordered square of the time derivative of a massless scalar field in Minkowski spacetime as an example of a stress tensor operator. We analyze the rate of decrease of the tail of the probability distribution for different temporal sampling functions, such as compactly supported functions and the Lorentzian function. We find that the tails decrease relatively slowly, as exponentials of fractional powers, in agreement with previous work using the moments of the distribution. Our results lead additional support to the conclusion that large vacuum stress tensor fluctuations are more probable than large thermal fluctuations, and may have observable effects.
Baily, Christopher John. "UHV studies of the adsorption of small adsorbate molecules on low index platinum single crystals." Thesis, University of Southampton, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288413.
Full textMultone, Xavier. "High vacuum chemical vapor deposition (HV-CVD) of alumina thin films /." [S.l.] : [s.n.], 2009. http://library.epfl.ch/theses/?nr=4485.
Full textWelsh, David S. "Current density limitations in a fast-pulsed high-voltage vacuum diode." Thesis, Monterey, California. Naval Postgraduate School, 1992. http://hdl.handle.net/10945/23850.
Full textAn investigation into the limitations on the enhanced field-emitted current density in a fast-pulsed (rise-time = ns), high voltage (> 106 V), 1-inch vacuum diode was conducted using a computer simulation based on the Fowler-Nordheim equation. Oscillations in the emitted current density (due to the change in the amount of space charge within the gap) were found to quickly decay into a final steady-state for the voltages applied. Steady-state values for a wide variety of work functions, electric field enhancement factors (based on the theory that "whiskers" on the cathode surface experience varying degrees of enhancement), and applied potentials were compared to two benchmarks: the amount of current density required to explode a whisker in < 10 ns by joule heating (J E = 109 A/cm2 ); and the Child-Langmuir (C-L) spacecharge- limited current density. Steady-state values were found to be less than J E . One model of the formation process of a plasma at the cathode surface requires that J E be met or exceeded by the steady-state value. Thus, such a model is not supported by this project's findings. The C-L limit is based on a thermionic-type emission process. As only pure field emission (i.e., no thermionic emission included) was considered, the steady-state values were, in all conclusive cases, less than the corresponding C-L limited values.
Kiefer, Florian [Verfasser]. "Multi-Effect Vacuum Membrane Distillation for High-Recovery Desalination / Florian Kiefer." München : Verlag Dr. Hut, 2020. http://d-nb.info/1219470961/34.
Full textJang, Yuseong. "High resolution time-resolved imaging system in the vacuum ultraviolet region." Master's thesis, University of Central Florida, 2014. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/6293.
Full textM.S.
Masters
Optics and Photonics
Optics and Photonics
Optics and Photonics
Al-Rawi, S. A. N. "Silicon sublimation at ultra high vacuum with microprocessor monitoring and measurements." Thesis, University of Kent, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382189.
Full textZHOU, CAIXIA. "HIGH THROUGHPUT pKa DETERMINATION BY VACUUM-ASSISTED MULTIPLEXED CAPILLARY ELECTROPHORESIS (VAMCE)." University of Cincinnati / OhioLINK, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1078413797.
Full textCallahan, Michael O. "X-ray pulse considerations and electron flow in high voltage vacuum diodes." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1993. http://handle.dtic.mil/100.2/ADA277301.
Full textThesis advisor(s): Fred R. Schwirzke, Xavier K. Maruyama. "December 1993." Cover title: X-ray ... voltage diodes. Includes bibliographical references. Also available online.
Hoefer, Ulrike Martina. "Design and development of a high-speed motor for a vacuum pump." Thesis, University of Newcastle Upon Tyne, 2008. http://hdl.handle.net/10443/758.
Full textEbert, Helen Diane. "The study of adsorbed species using electrochemical and ultra high vacuum techniques." Thesis, University of Southampton, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.255669.
Full textʿAẓīm, Muḥammad. "Ultra high vacuum-scanning electron microscope studies of Cs/Si(100)-2x1." Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.385984.
Full textMENDONZA, CESAR AUGUSTO DIAZ. "PHOSPHORUS INCORPORATION IN SINGLE WALL CARBON NANOTUBES PRODUCED BY HIGH VACUUM CVD." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2014. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=24237@1.
Full textCOORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR
PROGRAMA DE SUPORTE À PÓS-GRADUAÇÃO DE INSTS. DE ENSINO
Neste trabalho estudamos a síntese e caracterização de nanotubos de carbono de paredes simples com incorporação de fósforo. Os nanotubos foram produzidos em duas diferentes temperaturas (800 e 850 Graus Celsius), usando um precursor em pó (fase sólida) sem diluição em nenhum liquido. O sistema utilizado na síntese foi o CVD em alto vácuo. Para a caracterização comparamos as amostras incorporadas com SWNTs crescidos com etanol. Usamos a espectroscopia Raman, espectroscopia de fotoelétrons induzida por raios x (XPS) e microscopia eletrônica de transmissão (TEM) para caracterizar as amostras. A espectroscopia Raman e a microscopia eletrônica de transmissão foram usadas para confirmar a presença de SWNTs na amostra. Encontramos evidencia de que o fósforo foi incorporado nas amostras ao compararmos os espectros Raman dos SWNTs com amostra de referência. A partir dos resultados de XPS, observamos a presença de fósforo ligado a átomos de carbono que nós faz concluir que houve incorporação de fósforo nos nanotubos.
In this work was studied the synthesis and characterization of single wall carbon nanotubes (SWCN) with phosphorus incorporation. The nanotubes were produced in two different temperatures (800 and 850 Degrees Celsius), using a powder precursor (solid phase) without liquid dilution. The system used for the synthesis was High Vacuum Chemical Vapor Deposition (HVCVD). The samples were characterized comparing the samples with phosphorus with SWNT synthetized with ethanol. Raman spectroscopy, x-ray photoelectron spectroscopy (XPS) on transmission electron microscopy (TEM) were employed to characterize the samples. The Raman spectroscopy and TEM were employed to confirm the presence of SWNT in the samples. We found evidences that phosphorus were incorporated comparing the Raman spectra with the reference sample. The XPS results showed the presence of phosphorus atoms bonded to carbon atoms which make us conclude that the phosphorus were incorporated to the nanotubes.
au, E. Mohamed@murdoch edu, and Eman Mohamed. "Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapour Deposition." Murdoch University, 2004. http://wwwlib.murdoch.edu.au/adt/browse/view/adt-MU20050421.133523.
Full textNewton, Mark A. "Alloy effects in catalysis : the structure and reactivity of the CuPd[85:15]{110}p(2x1) surface." Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240235.
Full textGedik, Abdullah. "Energy threshold for laser induced breakdown on a metal surface under high and ultra high vacuum conditions." Thesis, Monterey, California. Naval Postgraduate School, 1991. http://hdl.handle.net/10945/28165.
Full textLain, amador Lucia. "Production of ultra-high-vacuum chambers with integrated getter thin-film coatings by electroforming." Thesis, Bourgogne Franche-Comté, 2019. http://www.theses.fr/2019UBFCD006/document.
Full textTitanium Zirconium Vanadium (TiZrV) thin film coatings are used in particle accelerators and synchrotron light sources to maintain ultra-high vacuum conditions. They are deposited on the internal walls of the vacuum chambers, transforming them from a gas source into a chemical pump. The trend in electron accelerators design consists in approaching the poles of the steering magnets close to the electron beam. This implies reducing the bore hosting the vacuum chamber and using very small diameter vacuum pipes. The application of physical vapor deposition (PVD) in such small diameter chambers becomes then very difficult. The aim of this project is to develop a novel procedure of coating/assembly, using a sacrificial aluminium mandrel as substrate of the thin film together with the creation of a surrounding copper chamber by electroforming. The first part of the study deals with the production and characterization of the electroformed chambers. The mechanical robustness of the assembly is checked, and the film characterization is performed by secondary electron microscopy (SEM), X-ray diffraction analysis (XRD), X-ray Fluorescence Spectroscopy (XRF) and X-Ray Photoelectron Spectroscopy (XPS). Moreover, the pumping performance is measured and compared with reference values of coatings produced by the standard PVD technique. The second part of the study evaluates the impurities included during the different steps of the process: PVD coating, electroforming and chemical etching of the mandrel. Thermal desorption spectroscopy and XPS depth profiling allow to quantify the impurities in the electroformed copper and the TiZrV thin film. Furthermore, the presence of hydrogen trapped in the electroformed copper is studied for different copper sulphate baths. One of them, without additives, require the use of pulse currents. The electrochemical behaviour of the bath allows the selection of different pulse parameters, derived from typical situations on the transient curves. Finally, the development of real-scale prototypes was achieved with the creation of a 4 mm diameter, 2 meters TiZrV coated vacuum chamber, which is unrivalled up to date
Grimes, Mikal Keola. "Vacuum heating absorption and expansion of solid surfaces induced by intense femtosecond laser irradiation /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.
Full textTalib, Zeeshan. "Investigation of Fast High Voltage PDC Measurement based on a Vacuum Reed-switch." Thesis, KTH, Elektroteknisk teori och konstruktion, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-91924.
Full textLee, King Hung. "Ellipsometric studies of the nucleation of zinc sulphide films in ultra-high vacuum." Thesis, Queen's University Belfast, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335519.
Full textSquires, Matthew B. "High repetition rate Bose-Einstein condensate production in a compact, transportable vacuum system." Connect to online resource, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3303829.
Full textSchmid, Nehir. "High Magnetic Field in Low Temperature Vacuum Conditions : Magnet Design, Modeling and Testing." Thesis, Luleå tekniska universitet, Rymdteknik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-82093.
Full textHöfer, Katharina. "All in situ ultra-high vacuum study of Bi2Te3 topological insulator thin films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-220737.
Full textDer Begriff "Topologischer Isolator" (TI) beschreibt eine neuartige Klasse von Verbindungen deren Inneres (engl. Bulk) isolierend ist, dieses Innere aber gleichzeitig und zwangsläufig eine metallisch leitende Oberfläche aufweist. Dies ist begründet in der nicht-trivialen Topologie dieser Materialien, welche durch eine spezielle Invertierung einzelner Bänder in der Bandstruktur und der Spin-Bahn-Kopplung im Materialinneren hervorgerufen ist. Diese topologisch geschützten, metallischen Oberflächenzustände sind gekennzeichnet durch eine masselose Dirac Dispersionsrelation und gekoppelte Helizität der Spinpolarisation, welche die Rückstreuung der Ladungsträger verbietet und somit zur Stabilisierung der Zustände gegenüber Störungen beiträgt. Auf Grundlage dieser außergewöhnlichen Merkmale haben Theoretiker eine Fülle neuer Phänomene und spannender Experimente vorhergesagt. Deren experimentelle Überprüfung steht jedoch noch aus, geschweige denn deren Umsetzung in Anwendungen, wie zum Beispiel die Erzeugung von Majorana Teilchen, fortgeschrittene Spintronik, oder die Realisierung von Quantencomputern. Aufgrund ihrer relativ einfachen Bandstruktur, welche nur einen Dirac-Kegel an der Oberfläche aufweist, haben die 3D TI Bi2Te3 und Bi2Se3 in den letzten Jahren großes Interesse erlangt. Weiterhin besitzen diese Materialien eine merkliche Bandlücke von bis zu ~0,3 eV, welche sogar Anwendungen bei Raumtemperatur ermöglichen könnten. Dennoch ist deren experimentelle Umsetzung nachwievor eine enorme Herausforderung. Das Haupthindernis, welches bis jetzt insbesondere die elektrische Charakterisierung the topologischen Oberflächenzustände behindert hat, ist die zusätzliche Leitfähigkeit des Materialinneren, welche durch Kristalldefekte und Beimischungen, sowie die Verunreinigung der Probenoberfläche durch Luftexposition bedingt wird. Die vorliegende Arbeit liefert einen Beitrag zu aktuellen den Anstrengungen in der Verbesserung der Probenqualität der TI um die Leitfähigkeit des Materialinneren zu unterdrücken, sowie die anschließende Untersuchung der elektrischen Eigenschaften unter kontrollierten Bedingungen durchzuführen. Weiterhin sollen geeignete Deckschichten identifiziert werden, welche die besonderen elektronischen Merkmale der TI nicht beeinflussen sowie diese gegen äußere Einflüsse schützen, und somit die Durchführung anspruchsvoller ex situ Experimente ermöglichen können. Die untersuchten Bi2Te3 Schichten wurden mittels Molekularstrahlepitaxie (MBE) hergestellt. Es konnte gezeigt werden, dass es allein durch Optimierung der Wachstumsbedingungen möglich ist Proben herzustellen, die gleichbleibend isolierende Eigenschaften des TI Inneren aufweisen und Eindomänen-Ausrichtung besitzen. Die zentralen Faktoren sind hierbei die Aufrechterhaltung eines Flussratenverhältnisses von Te/Bi ~8 der einzelnen Elemente, sowie die Wahl einer ausreichend hohen Substrattemperatur, um ein vollständiges Abdampfen (Destillation) des überschüssigen Tellur zu erreichen. Weiterhin müssen Substrate mit gut angepassten Gitterparametern verwendet werden, welches bei BaF2 (111) gegeben ist. Optimales MBE Wachstum konnte durch ein Zwei-Stufen Prozess bei Substrattemperaturen von 220°C und 250°C und einer Bi-Verdampfungsrate von 1 Å/min erreicht werden. Die nachfolgende Charakterisierung der strukturellen Eigenschaften, Photoelektronenspektroskopie, sowie temperaturabhängige Leitfähigkeitsmessungen wurden alle in einem zusammenhängenden Ultrahochvakuum-System durchgeführt. Auf diese Weise wird eine zuverlässige Erfassung der intrinsischen Eigenschaften der TI sichergestellt. Zur Überprüfung, ob die Leitfähigkeit der Proben tatsächlich nur durch die Oberflächenzustände hervorgerufen wird, wurden Filme mit Schichtdicken im Bereich von 10 bis 50 Quintupel-Lagen (QL; 1QL~ 1 nm) hergestellt und charakterisiert. Winkelaufgelöste Photoelektronenspektroskopie (ARPES) belegt, dass das chemische Potential (Fermi-Niveau) in allen Proben innerhalb der Bandlücke der Bandstruktur des Materialinneren liegt und nur von den topologisch geschützten Oberflächenzuständen gekreuzt wird, welche die charakteristische lineare Dirac Dispersionsrelation aufweisen. Die temperaturabhängigen Widerstandsmessungen zeigen ein metallisches Verhalten aller Proben. Bei der Variation der Schichtdicke von 10 zu 50QL wird eine Streuung des Flächenwiderstandes vom Faktor 1,3 bei 14K und 1,5 bei Raumtemperatur beobachtet. Dies beweist, dass die gemessene Leitfähigkeit vorrangig durch die topologisch geschützten Oberflächenzustände hervorgerufen wird. Eine geringe Oberflächenladungsträgerkonzentration im Bereich von 2–4*10^12 cm^−2 und hohe Mobilitätswerte von bis zu 4600 cm2/Vs wurden erreicht. Weiterhin wurden die negativen Auswirkungen auf die Eigenschaften der TI durch Luftexposition quantifiziert, welches die Notwendigkeit belegt, die Oberfläche der TI vor Umgebungseinflüssen zu schützen. Die Proben verhalten sich inert gegenüber reinem Sauerstoff, daher ist Wasser aus der Luftfeuchte höchstwahrscheinlich der Hauptgrund für die beobachtbare Verschlechterung. Darüber hinaus konnte epitaktisch gewachsenes Tellur als geeignete Deckschicht ausfindig gemacht werden, welches die Eigenschaften der Bi2Te3 Filme nicht beeinflusst, sowie gegen Veränderungen durch Luftexposition schützt. Die gewonnenen Erkenntnisse stellen eine ideale Grundlage für weiterführende Untersuchungen dar und ebnen den Weg zur Entwicklung von Bauelementen welche die spezifischen Besonderheiten der topologischen Oberflächenzustände
Mayhew, Christopher Anthony. "The high resolution vacuum ultraviolet absorption spectra of group VI dihydrides and deuterides." Thesis, Imperial College London, 1985. http://hdl.handle.net/10044/1/37778.
Full textChew, Andrew David. "A rotating disc gauge for absolute total pressure measurement in a high vacuum." Thesis, University of York, 1993. http://etheses.whiterose.ac.uk/10874/.
Full textHann, Raiford Eugene. "Phase equilibria of the high-baria portion of the BaO-CaO-Al[subscript]2O[subscript]3 system." Diss., Georgia Institute of Technology, 1986. http://hdl.handle.net/1853/19105.
Full textHamann, Christian [Verfasser]. "An Electrospray Ion Source for Ultra-High Vacuum Deposition of Organic Molecules / Christian Hamann." Kiel : Universitätsbibliothek Kiel, 2011. http://d-nb.info/104859226X/34.
Full textFostner, Shawn. "Ultra high vacuum fabrication of metallic contacts for molecular devices on an insulating surface." Thesis, McGill University, 2010. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=95011.
Full textLa préparation et la caractérisation de fils métalliques sur des substrats isolants par une variété de mécanismes a été explorée. Une approche multi-échelle utilisant des masques-stencils microfabriqués de silicium, l'électromigration contrôlée par rétroaction, et le dépôt induit par champ en nouvelle géométrie d'agrégats métalliques, a été explorée sur des substrats de bromure de potassium (KBr), de phosphure d'indium (InP) et d'oxyde de silicium sous Ultra Haut Vide (UHV). Le dépôt initial de fils d'or et de tantale entre cent nanomètres et quelques micromètres a été réalisé en utilisant des nanostencils au silicium renforcé. La fabrication des stencils a été discutée, et un examen de la déformation des structures intégrées dans le cas du dépôt de couches de tantale sous hautes contraintes a montré qu'elle était significativement plus petite que pour les structures typiques. Les fils métalliques déposés à l'aide de ces stencils, ainsi que la lithographie par faisceau électronique ont été mis sous contrainte électriquement et les caractéristiques de rupture analysées. Des vides typiques à l'échelle du nanomètre ont été observés, ainsi que des structures communément retrouvées dans la rupture de structure de type bambou dans les fils d'or de 100nm et moins, en particulier avec une résistance en série importante. Ces vides plus grands devraient être plus applicables pour le dépôt par la suite d'agrégats métalliques et la préparation de dispositifs moléculaires. Une étape a été franchie vers la connexion des fils déposés initialement ainsi que de molécules localisées de façon imageable, en réalisant un modèle et des expériences de dépôt induit par champ d'agrégats d'or sur KBr et InP. Le dépôt sur des substrats InP avec derrière un gaz d'électrons 2D comme contre-électrode a démontré la faisabilité de cette technique de dépôt sous UHV. Des dépôts ultérieurs sur ou
Manzoor, Tahir. "Ellipsometric studies of the nucleation and growth of thin films in ultra high vacuum." Thesis, Queen's University Belfast, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335428.
Full textLudwick, Jonathan. "Physics of High-Power Vacuum Electronic Systems Based on Carbon Nanotube Fiber Field Emitters." University of Cincinnati / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1613745398331048.
Full textLuhman, Xavier D. "Sulfurizing and selenizing metal films in ultra-high vacuum by hydride gas kinetic control." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/122393.
Full textThesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2019
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (page 30).
Molecular beam epitaxy (MBE) is an important, well-established method for creation of thin films. The addition of gaseous sources of hydrogen sulfide and hydrogen selenide is not currently a well-documented or common modification to such systems. While the thermodynamics of using such sources for the production of various chalcogenide thin films are favorable, the actual results thus far do not demonstrate the desired outcome. This indicates that the kinetics of the desired reactions are inhibiting the process. Compared to oxygen, reactions involving sulfur and selenium are slow. In order to ensure that the hydride gases have the opportunity to react as desired, it is necessary to keep the system free of oxygen and to maximize the collisions of gas molecules with the substrate. The first requirement should be achieved simply by using MBE for the process. The second requirement is not provided for in a typical MBE system. Thus, modifications are necessary to increase the reaction rate of the gases, namely by extending the source lines to be closer to the substrate. This thesis addresses the design process for tubing inserts in an existing MBE system.
by Xavier D. Luhman.
S.B.
S.B. Massachusetts Institute of Technology, Department of Materials Science and Engineering
Blanden, Zachary F. "Process development for high powered amplifier Au/Sn eutectic die attach via vacuum furnace." Thesis, State University of New York at Binghamton, 2017. http://pqdtopen.proquest.com/#viewpdf?dispub=10250174.
Full textThis research was conducted to develop and qualify a vacuum GaAs semiconductor monolithic microwave integrated circuit die attach process. Research was done to understand the causes and effects of voiding levels on device performance and reliability. Simultaneous investigation was done to qualify vacuum-attach as a successful methodology by which minimal voiding levels were achieved. After an initial vacuum-attach trial was completed to verify the methodology, internal accept/reject criteria were developed to qualify die attach interfaces. A dual phase attachment methodology was created to minimize tolerance stacking resulting in more consistent component placement. MATLAB image processing code was developed to quantify the voiding levels against the accept/reject criteria. Statistical methodologies were employed to troubleshoot root causes for special cause variation of initial attachment failures. A design of experiment was conducted testing three factors each at two levels (process gas [Gas A, Gas B], leaking chamber [yes, no], and carrier supplier [Supplier A, Supplier B]). The DOE identified process gas and its interaction with the carrier supplier to be significant. Further investigation of the carriers identified plating contamination, resulting in the process gas the primary factor of interest. A secondary experiment focusing on process gas identified no statistical difference between Gas A? and Gas B (Gas A? indicating a high purity form of Gas A). With this information, Gas A? was selected as the process gas. A total of 56 attachment interfaces were then produced yielding 0.7485% voiding, on average, following a Weibull distribution (?= 1.04171, ? = 0.75967) with zero rejections. The process?s consistency of minimal voiding levels were deemed a success and the process was released to production.
Qin, Feili. "Metal Oxide Reactions in Complex Environments: High Electric Fields and Pressures above Ultrahigh Vacuum." Thesis, University of North Texas, 2005. https://digital.library.unt.edu/ark:/67531/metadc4843/.
Full textShipman, Nicholas Christopher. "Experimental study of DC vacuum breakdown and application to high-gradient accelerating structures for CLIC." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/experimental-study-of-dc-vacuum-breakdown-and-application-to-highgradient-accelerating-structures-for-clic(b6eae72f-72d2-42da-87a6-cab7c30f1bda).html.
Full textTabatabaei, SeyedAli. "Design and Analysis of "High Vacuum Densification Method" for Saturated and Partially Saturated Soft Soil Improvement." University of Akron / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=akron1398187554.
Full textLautenschlager, Eric J. "Silicon nanoclusters : ultra high vacuum laser ablation fabrication and in situ scanning tunneling microscopy characterization /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
Full textDay, Brian Scott. "The Dynamics of Gas-Surface Energy Transfer in Collisions of Rare Gases with Organic Thin Films." Diss., Virginia Tech, 2005. http://hdl.handle.net/10919/29860.
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Willis, Gregory. "Investigation of onset of plasma formation at anode of fast-pulsed high-voltage vacuum diode." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1993. http://handle.dtic.mil/100.2/ADA267214.
Full textLeffler, Jens, and Christoffer Sörmark. "Beating the carpet : Developing an active vacuum cleaner nozzlefor high carpet performance using less energy." Thesis, KTH, Maskinkonstruktion (Inst.), 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-156891.
Full textDammsugare står för en stor del av energikonsumtionen inom EU. Detta dels på grund av att höga ineffekter i dammsugare traditionellt har blivit felaktigt sammankopplat med en bra prestanda hos produkten. För att reglera detta kommer Europakommissionen introducera en ny energietikett för dammsugare från och med september 2014. Med den kommer maxgränser för ineffekt att införas och produkter att klassificeras efter energieffektivitet, städprestanda, återutsläpp av damm och ljudnivå. Ett företag som just nu håller på att anpassa sina produkter till den nya märkningen är Electrolux. Ett av de kriterier som är svårast att nå med en lägre ineffekt är dammupptagning på matta ( dpuc). Generellt är munstycken med motordrivna roterande borstar eller lameller, så kallade aktiva munstycken, bättre på att ta upp damm på matta än andra, så kallade passiva, munstycken. Målet med denna uppsats har varit att undersöka möjligheten för ett dammsugarsystem att uppnå de högsta klasserna i energieffektivitet – A till A+++ – men samtidigt behålla en god dammupptagning – klass C eller bättre – på matta. Detta gjordes genom att anpassa ett aktivt munstycke från Electrolux till ett lägre luftflöde och lägre undertryck. Ett flertal motordrivna borstvalsar togs fram och testades i detta munstycke enligt industristandarden för prestandatester. Det kunde konstateras genom testning att det var möjligt att nå de högre klasserna i energieffektivitet och samtidigt behålla en god dammupptagning.
Morse, Michael Ty. "Growth of erbium-doped Si/SiGe double heterostructures by ultra-high vacuum chemical vapor deposition." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10380.
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