Books on the topic 'High temperature semiconductors'
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M, Willander, and Hartnagel Hans 1934-, eds. High temperature electronics. London: Chapman & Hall, 1997.
Find full textNational Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., ed. Materials for high-temperature semiconductor devices. Washington, D.C: National Academy Press, 1995.
Find full textBakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA: Kluwer Academic Publishers, 2000.
Find full textChristou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.
Find full textBakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA: Springer US, 2000.
Find full textuniversitet, Uppsala, ed. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala: Acta Universitatis Upsaliensis, 1997.
Find full textCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Find full textCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Find full textL, Shindé Subhash, and Rudman David Albert, eds. Interfaces in high-Tc superconducting systems. New York: Springer-Verlag, 1994.
Find full textLongya, Xu, Zhu Lu, and United States. National Aeronautics and Space Administration., eds. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Find full textLongya, Xu, Zhu Lu, and United States. National Aeronautics and Space Administration., eds. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Find full textM, Singer J., ed. Phase transition approach to high temperature superconductivity: Universal properties of cuprate superconductors. London: Imperial College Press, 2000.
Find full textSymposium E on High-Temperature Electronics: Materials, Devices, and Applications (1994 Strasbourg, France). High temperature electronics: Proceedings of Symposium E on High-Temperature Electronics: Materials, Devices, and Applications of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994. Amsterdam: Elsevier, 1995.
Find full textCarpinero, Gullerno. Semiconductor terahertz technology: Devices and systems at room temperature operation. Hoboken: John Wiley & Sons, Inc., 2015.
Find full textA, Smirnov I., Institut fiziki (Akademii͡a︡ nauk SSSR), and Vsesoi͡u︡znai͡a︡ shkola "Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov" (7th : 1987 : Makhachkala, Russia), eds. Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov: Tematicheskiĭ sbornik. Makhachkala: Institut fiziki, Dagestanskiĭ filial AN SSSR, 1988.
Find full textL, Shindé Subhash, and Rudman David A, eds. Interfaces in high-T(subscript c) superconducting systems. New York: Springer-Verlag, 1994.
Find full textA, Madhukar, Society of Photo-optical Instrumentation Engineers., Society of Vacuum Coaters, and SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Applications (1990 : San Diego, Calif.), eds. Growth of semiconductor structures and high-Tc thin films on semiconductors: 20-21 March 1990, San Diego, Calfiornia. Bellingham, Wash., USA: The Society, 1990.
Find full textEuropean Conference on High Temperature Electronics (3rd 1999 Berlin, Germany). HITEN 99: The Third European Conference on High Temperature Electronics. Abingdon, Oxfordshire, England: AEA Technology, 1999.
Find full textD, Hochheimer Hans, Etters Richard D, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Research Workshop on Frontiers of High-Pressure Research (1991 : Fort Collins, Colo.), eds. Frontiers of high-pressure research. New York: Plenum Press, 1991.
Find full textDammann, Michael. Defects in silicon induced by high temperature treatment and their influence on MOS-devices: A thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences. Zurich: Physical Electronics Laboratory, Swiss Federal Institute of Technology, 1994.
Find full textChristian, Fazi, Parsons James D, and United States. National Aeronautics and Space Administration., eds. Fast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Find full text1949-, Simons Rainee, and United States. National Aeronautics and Space Administration., eds. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Find full text1949-, Simons Rainee, and United States. National Aeronautics and Space Administration., eds. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Find full textAnthony, Powell J., Petit Jeremy B, and United States. National Aeronautics and Space Administration., eds. Development of silicon carbide semiconductor devices for high temperature applications. [Washington, DC]: National Aeronautics and Space Administration, 1991.
Find full textK, Yeoh W., ed. Improvement of vortex pinning in MgB₂ by doping. New York: Nova Science Publishers, 2008.
Find full textNagaev, Edouard. Magnetic Semiconductors and High Temperature Superconductivity. University of Cambridge ESOL Examinations, 1999.
Find full textSpencer, Michael, Michael Shur, Steven Denbaars, and John Palmour. Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512. University of Cambridge ESOL Examinations, 2014.
Find full text(Editor), Magnus Willander, and H. L. Hartnagel (Editor), eds. High Temperature Electronics (Electronic Materials Series). Springer, 1996.
Find full textJeon, Deok-Su. Modeling the temperature dependence of the silicon-on-insulator mosfet for high-temperature applications. 1990.
Find full textCharacteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Find full textWide-bandgap semiconductors for high power, high frequency, and high temperature: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. Warrendale, Penn: Materials Research Society, 1998.
Find full textShinde, Subhash. Interfaces in High-Tc Superconducting Systems. Springer, 2013.
Find full textHan, Weimin. NMR study of GaAs at high temperature. 1992.
Find full textGermany) European Conference on High Temperature Electronics (3rd : 1999 : Berlin. Hiten 99: The Third European Conference on High Temperature Electronics. Institute of Electrical & Electronics Enginee, 1999.
Find full textHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu, and Antti Räisänen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Limited, John, 2015.
Find full textHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu, and Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.
Find full textHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu, and Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.
Find full textDikmen, Cemal Tamer. Modeling and design of semiconductor devices and integrated circuits for high-temperature electronics. 1994.
Find full textWide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Symposium Held April 13-15, 1998, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings). Materials Research Society, 1998.
Find full text(Editor), Hans D. Hochheimer, and Richard E. Etters (Editor), eds. Frontiers of High Pressure Research (NATO Science Series: B:). Springer, 1992.
Find full textBakker, Anton, and Johan H. Huijsing. High-Accuracy CMOS Smart Temperature Sensors (The Kluwer International Series in Engineering and Computer Science Volume 595) (The Springer International Series in Engineering and Computer Science). Springer, 2000.
Find full textAtomic layer growth and processing: Symposium held April 29 - May 1, Anaheim, California, U.S.A. Pittsburgh: Materials Research Society, 1991.
Find full textFast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Find full textMaterials for High-Temperature Semiconductor Devices. Washington, D.C.: National Academies Press, 1995. http://dx.doi.org/10.17226/5023.
Full textCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Find full textCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Find full textCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Find full textCharacteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Find full textNeuenschwander, Jürg. A high pressure low temperature study on rare earth compounds: Semiconductor to metal transition. 1988.
Find full textQueisser, H. J. Festkörper Probleme: Plenary Lectures of the Divisions Semiconductor Physics, Surface Physics, Low Temperature Physics, High Polymers, Thermodynamics and Statistical Mechanics, of the German Physical Society, Münster, March 19-24 1973. Elsevier Science & Technology Books, 2013.
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