Relevant bibliographies by topics / High-temperature electronics packaging

Academic literature on the topic 'High-temperature electronics packaging'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "High-temperature electronics packaging"

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Slater, Conor, Radisav Cojbasic, Thomas Maeder, Yusuf Leblebici, and Peter Ryser. "Packaging technologies for high temperature control electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000184–92. http://dx.doi.org/10.4071/hiten-tp15.

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Current low temperature electronics (<175°C) with logical functions (CPUs, MCUs) have exceptional levels of reliability in terms of packaging, stemming from decades of research. However, electronics that operate at higher temperatures (>175°C) for prolonged periods of time require packaging technologies that have to tackle many new problems. At high temperatures traditionally used materials such as organic circuit boards, adhesives and standard solders degrade rapidly or undergo changes in structure and properties. An even more critical issue than high-temperature survivability is resistance to temperature cycling. Thermal mismatch between organic boards and semiconductor dies leads to high thermomechanical strains during swings from high to low temperature extremes, which can make an otherwise high temperature resistant assembly fail after a relatively low number of cycles. This work focuses on the packaging technologies for high temperature control modules, those with logical and signal conditioning applications. Although control modules share many similarities with power modules, they present their own unique design challenges, such as significantly higher complexity and a limitation of compatible materials. Here, recent research on substrates, die attach technologies and wirebond interconnects suited for high temperature ICs are presented along with packaging technologies for discrete components (capacitors and resistors) with the aim of identifying the current best solutions. Test vehicles for the various technologies were constructed and were subjected to high temperature storage at temperatures higher than 200°C. They were analysed in terms of degradation (i.e. loss in shear strength, pull strength, change in resistance, etc.). In parallel, a separate set of samples were subjected to temperature cycles from −20°C to 180°C and then analysed using the same tests as before for comparison. The combined data allow a recommendation to be made on how to assemble a viable control module such as one based on an SOI microcontroller designed at EPFL to operate at high temperatures.
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Fraley, John R., Edgar Cilio, and Bryon Western. "Advanced Applications of High Temperature Magnetics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000046–55. http://dx.doi.org/10.4071/hiten-ma17.

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In recent years, high temperature magnetic structures have been developed and used for inductors and transformers in high temperature applications ranging from power electronics to wireless telemetry systems. Research in the high temperature magnetics field has led to the development of more advanced magnetic structures that can enable diverse applications ranging from regulators to amplifiers, with far reaching implications for the high temperature electronics community. Current high temperature electronics have shown potential in lab and rig tests, but high temperature electronics systems suffer from the relatively limited lifetime of the semiconductor devices themselves. The advanced magnetics discussed in this paper can be designed to have extreme lifetime capabilities even at elevated temperatures, and as such can have an immediate impact on the implementation of true field deployable high temperature electronic systems. Aerospace, power generation, and automotive industries may especially benefit from this technology, as significant advances in health monitoring and active engine control will be enabled by these advanced magnetic structures. A theoretical understanding of these advanced magnetic structures is necessary for initial design and feasibility, while the true development and implementation of this technology depends on state of the art high temperature packaging approaches. By combining high temperature, grain-oriented magnetic materials along with high temperature packaging processes, APEI, Inc. has created advanced high temperature magnetic systems that indicate the technology described in this paper is a viable one, with applications across a wide range of high temperature electronics systems.
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Kumar, Rakesh. "A High Temperature and UV Stable Vapor Phase Polymer for Electronics Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000207–14. http://dx.doi.org/10.4071/hiten-paper3-rkumar.

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A recent development in the area of high temperature and UV stable polymers, which offers solutions to many existing packaging and reliability challenges of electronics industry, is described. Packaging, protection and reliability of various electronic devices and component, including PCB's, MEMS, optoelectronic devices, fuel cell components and nano-electronic parts are, becoming more challenging due to their long-term performance requirements. This high temperature polymer, named Parylene HT, offers solutions to many existing protective, packaging and reliability issues in the electronics and medical industries, in part because of its excellent electrical and mechanical properties, chemical inertness and long-term thermal stability at high temperature exposure (up to 350°C long-term and short-term at 450 °C). Experimental results and trial runs demonstrate the ability of Parylene HT coating to meet the growing requirements of higher dielectric capabilities, higher temperature integrity, mechanical processing, etc. of a dynamic electronics industry. In addition, Parylene HT polymer coating truly conforms to parts due to its molecular level deposition characteristics. Its suitability and biocompatibility encourage researchers to explore Parylene HT's role in sensors and in active electronic devices for various industries.
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Kumar, Rakesh. "Parylene HT®: A High Temperature Vapor Phase Polymer for Electronics Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000108–13. http://dx.doi.org/10.4071/hitec-rkumar-tp13.

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A development in the area of high temperature polymers, which offers solutions to many existing packaging and reliability challenges of electronics industry, is described. Packaging, protection and reliability of various electronic devices and components that include PCB's, MEM's, optoelectronic devices, fuel cell components and nano-electronic parts are becoming more challenging due to their long-term performance requirements. Parylene HT offers solutions to many existing packaging and reliability issues of electronics industry in part because of its excellent electrical & mechanical properties, chemical inertness and long-term thermal stability at high temperature exposure to over 350°C (short-term at 450 °C). Experimental results and trial runs demonstrate the ability of Parylene HT coating to meet the growing requirements of higher dielectric capabilities, higher temperature integrity and mechanical processing etc. of dynamic electronic industry. In addition, Parylene HT polymer coating truly conforms to the parts due to its molecular level deposition characteristics. Its suitability and biocompatibilty encourage researchers to explore Parylene HT's role in sensors and in active electronic devices for various industries, which include enhancing high temperature application/technologies.
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Nasiri, Ardalan, Simon S. Ang, Tom Cannon, Errol V. Porter, Kaoru Uema Porter, Caitlin Chapin, Ruiqi Chen, and Debbie G. Senesky. "High-Temperature Electronics Packaging for Simulated Venus Condition." Journal of Microelectronics and Electronic Packaging 17, no. 2 (April 1, 2020): 59–66. http://dx.doi.org/10.4071/imaps.1115241.

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Abstract An electronic packaging technology that survives the simulated Venusian surface temperature of 465°C and 96 bar pressure in carbon dioxide (CO2) and nitrogen environments, without the corrosive trace gases, was developed. Alumina ceramic substrates and gold conductors on alumina were evaluated for electrical and mechanical performance. The most promising die-attach materials are thick-film gold and alumina-based ceramic pastes. Alumina, sapphire, silicon, and silicon carbide dies were attached to the alumina substrates using these die-attach materials and exposed to 96 bar pressure in a CO2 environment at 465°C for 244 h. The ceramic die-attach material showed consistent shear strengths before and after the test. An alumina ceramic encapsulation material was also evaluated for thermomechanical stability. The devices on the packaging substrates were encapsulated by a ceramic encapsulation with no significant increase in cracks and voids after the Venusian simulator test. Wire pull strength tests were conducted on the gold bond wire to evaluate mechanical durability before and after the Venusian simulator exposure. The average gold bond wire pull strengths before and after exposure were 5.78 g-F and 4 g-F for 1-mil gold bond wires, respectively, meeting the minimum MIL-STD-885 2011.9 standard. The overall wire bond daisy chain resistance change was .47% after the Venus simulator test, indicating a promising wire bond integrity. A titanium package was fabricated to house the ceramic packaging substrate and a two-level metalized feedthrough was fabricated to provide electrical interfaces to the package.
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Daves, Glenn G. "Trends in Automotive Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (January 1, 2014): 001818–50. http://dx.doi.org/10.4071/2014dpc-keynote_th1_daves.

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The long-term trend in automobiles has been increasing electronics content over time. This trend is expected to continue and drives diverse functional, form factor, and reliability requirements. These requirements, in turn, are leading to changes in the package types selected and the performance specifications of the packages used for automotive electronics. Several examples will be given. This abstract covers the development of a distributed high temperature electronics demonstrator for integration with sensor elements to provide digital outputs that can be used by the FADEC (Full Authority Digital Electronic Control) system or the EHMS (Engine Health Monitoring System) on an aircraft engine. This distributed electronics demonstrator eliminates the need for the FADEC or EHMS to process the sensor signal, which will assist in making the overall system more accurate and efficient in processing only digital signals. This will offer weight savings in cables, harnesses and connector pin reduction. The design concept was to take the output from several on-engine sensors, carry out the signal conditioning, multiplexing, analogue to digital conversion and data transmission through a serial data bus. The unit has to meet the environmental requirements of DO-160 with the need to operate at 200°C, with short term operation at temperatures up to 250°C. The work undertaken has been to design an ASIC based on 1.0 μm Silicon on Insulator (SOI) device technology incorporating sensor signal conditioning electronics for sensors including resistance temperature probes, strain gauges, thermocouples, torque and frequency inputs. The ASIC contains analogue multiplexers, temperature stable voltage band-gap reference and bias circuits, ADC, BIST, core logic, DIN inputs and two parallel ARINC 429 serial databuses. The ASIC was tested and showed to be functional up to a maximum temperature of 275°C. The ASIC has been integrated with other high temperature components including voltage regulators, a crystal oscillator, precision resistors, silicon capacitors within a hermetic hybrid package. The hybrid circuit has been assembled within a stainless steel enclosure with high temperature connectors. The high temperature electronics demonstrator has been demonstrated operating from −40°C to +250°C. This work has been carried out under the EU Clean Sky HIGHTECS project with the Project being led by Turbomeca (Fr) and carried out by GE Aviation Systems (UK), GE Research – Munich (D) and Oxford University (UK).
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Shaddock, David, Cathleen Hoel, Nancy Stoffel, Mark Poliks, and Mohammed Alhendi. "Additively Manufactured Extreme Temperature Electronics Packaging." International Symposium on Microelectronics 2021, no. 1 (October 1, 2021): 000189–94. http://dx.doi.org/10.4071/1085-8024-2021.1.000189.

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Abstract There is growing interest in extreme temperature electronics to support the mission needs to sense, actuate, and communicate at temperatures beyond the normal range of operations in commercial and military applications. Reliable packaging in the temperature range of more than 300°C has been demonstrated using ceramic multi-chip modules using conventional hybrid circuit technology. This approach typically requires high NRE costs and lead time. Additive manufacturing processes of metals, ceramics, conductors, and dielectrics provides a digital transformation of hybrid circuit manufacturing technology that reduces time and cost for packaging with the added benefits of novel 3D structures and embedded features. This report presents the results of testing to characterize important electrical and mechanical properties of additively manufactured packaging materials (substrates, conductor, dielectrics) and die interconnect methods needed for 300 to 750 °C electronic packaging designs.
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Fang, Kun, Rui Zhang, Tami Isaacs-Smith, R. Wayne Johnson, Emad Andarawis, and Alexey Vert. "Thin Film Multichip Packaging for High Temperature Digital Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000039–45. http://dx.doi.org/10.4071/hiten-paper1-rwjohnson.

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Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is vacuum deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD silicon nitride is used for the interlayer dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 320°C. The electrical characteristics of the dielectric as a function of temperature were measured. Thermocompression flip chip bonding of Au stud bumped SiC die was used for electrical connection of the digital die to the thin film substrate metallization. Since polymer underfills are not compatible with 300°C operation, AlN was used as the base ceramic substrate to minimize the coefficient of thermal expansion mismatch between the SiC die and the substrate. Initial die shear results are presented.
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McCluskey, F. P., L. Condra, T. Torri, and J. Fink. "Packaging Reliability for High Temperature Electronics: A Materials Focus." Microelectronics International 13, no. 3 (December 1996): 23–26. http://dx.doi.org/10.1108/13565369610800386.

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Guo, Xiaorui, Qian Xun, Zuxin Li, and Shuxin Du. "Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review." Micromachines 10, no. 6 (June 19, 2019): 406. http://dx.doi.org/10.3390/mi10060406.

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.
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Dissertations / Theses on the topic "High-temperature electronics packaging"

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Grummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES." Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.

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Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that must be enhanced to improve reliability. This thesis introduces new packaging that is thermally resilient and has reduced mechanical stress from temperature rise that also provides increased circuit lifetime and greater reliability for continued use to 300°C which is within operation ratings of these new semiconductors. The new module is also without problematic wirebonds that lead to a majority of traditional module failures which also introduce parasitic inductance and increase thermal resistance. Resultantly, the module also features a severely reduced form factor in mass and volume.
M.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
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Smarra, Devin A. "Low Temperature Co-Fired Ceramic (LTCC) Substrate for High Temperature Microelectronics." University of Dayton / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1493386231571894.

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Lei, Guangyin. "Thermomechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging." Diss., Virginia Tech, 2010. http://hdl.handle.net/10919/37803.

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This study focused on the development and evaluation of die-attach material and substrate technology for high-temperature applications. For the die-attach material, a low-temperature sintering technique enabled by a nanoscale silver paste was developed for attaching large-area (>100 mm2) semiconductor chips. The nanoscale silver paste can be sintered at a much lower temperature (<300 oC) than in the conventional sintering process (>800 oC), and at the same time reached about 80 vol% bulk density. Analyses of the sintered joints by scanning acoustic imaging and electron microscopy showed that the attachment layer had a uniform microstructure with micron-sized porosity with the potential for high reliability under high temperature applications. We also investigated the effects of a large temperature cycling range on the reliability of direct bonded aluminum (DBA) substrate. DBA substrates with different metallization were thermally cycled between -55 oC and 250 oC. Unlike with the DBC substrate, no delamination of aluminum from the aluminum nitride ceramic base-plate was observed for the DBA substrates. However, aluminum surface became roughened during the thermal cycling test. It was believed that in the high-temperature regime, the significant amount of thermomechanical stress and grain-scale deformation would cause recrystallization and grain-boundary sliding in the aluminum layer, which would further lead to the observed increase in surface roughness. The influence of metallization over the aluminum surface on the extent of surface roughness was also characterized. In addition to evaluating the reliability of nanoscale silver paste and DBA substrate individually, this work also conducted experiments that characterize the compatibility of nanoscale silver paste on DBA substrate in terms of reliability in a high-temperature environment. In the large-area attachment, the sintered silver was found to be very compliant with the deformed aluminum. The device-to-silver and silver-to-substrate interfaces remain intact after up to 800 cycles. No large scale delamination and horizontal cracks were observed. However, some vertical crack lines began to show after certain number of cycles. It was believed that these vertical cracks were caused by the thermomechanical stresses in the sintered silver layer. In addition, with regard to the thermal performance, since most of the heat was generated from the semiconductor devices and were transferred vertically through the die-attach material to substrate, these vertical cracks were also considered more advantageous than horizontal cracks.
Ph. D.
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yin, jian. "High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure." Diss., Virginia Tech, 2005. http://hdl.handle.net/10919/30076.

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The work reported in this dissertation is intended to propose, analyze and demonstrate a technology for a high temperature integrated power electronics module, for high temperature (e.g those over 200oC) applications involving high density and low stress. To achieve this goal, this study has examined some existing packaging approaches, such as wire-bond interconnects and solder die-attach, flip-chip and pressure contacts. Based on the survey, a high temperature, multilayer 3-D packaging technology in the form of an Embedded Chip Module (ECM) is proposed to realize a lower stress distribution in a mechanically balanced structure with double-sided metallization layers and material CTE match in the structure. Thermal and thermo-mechanical analysis on an ECM is then used to demonstrate the benefits on the cooling system, and to study the material and structure for reducing the thermally induced mechanical stress. In the thermal analysis, the high temperature ECM shows the ability to handle a power density up to 284 W/in3 with a heat spreader only 2.1x2.1x0.2cm under forced convection. The study proves that the cooling system can be reduced by 76% by using a high temperature module in a room temperature environment. Furthermore, six proposed structures are compared using thermo-mechanical analysis, in order to obtain an optimal structure with a uniform low stress distribution. Since pure Mo cannot be electroplated, the low CTE metal Cr is proposed as the stress buffering material to be used in the flat metallization layers for a fully symmetrical ECM structure. Therefore, a chip area stress as low as 126MPa is attained. In the fabrication process, the high temperature material glass and a ceramic adhesive are applied as the insulating and sealing layers. Particularly, the Cr stress buffering layer is successfully electroplated in the high temperature ECM by means of the hard chrome plating process. The flat metallization layer is accomplished by using a combined structure with Cr and Cu metallization layers. The experimental evaluations, including the electrical and thermal characteristics of the ECM, have been part of in the study. The forward and reverse characteristics of the ECM are presented up to 250oC, indicating proper device functionality. The study on the reverse characteristics of the ECM indicates that the large leakage current at high temperature is not due to the package surrounding the chip, but chiefly caused by the Schottky junction and the chip passivation layer. Finally, steady-state and transient measurements are conducted in terms of the thermal measurements. The steady-state thermal measurement is used to demonstrate the cooling system reduction. To obtain the thermal parameters of the different layers in the high temperature ECM, the transient thermal measurement is applied to a single chip ECM based on the temperature cooling-down curve measurement.
Ph. D.
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Msolli, Sabeur. "Modélisation thermomécanique de l'assemblage d'un composant diamant pour l'électronique de puissance haute température." Thesis, Toulouse, INPT, 2011. http://www.theses.fr/2011INPT0088/document.

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L'utilisation du diamant comme composant d'électronique de puissance est une perspective intéressante tant en ce qui concerne les applications hautes température que forte puissance. La problématique principale de ces travaux réalisés dans le cadre du programme Diamonix, réside dans l'étude et l'élaboration d'un packaging permettant la mise en oeuvre d'une puce diamant devant fonctionner à des températures variant entre -50°C et 300°C. Nous nous sommes intéressés au choix des matériaux de connexion de la puce avec son environnement. Suite à l'étude bibliographique, nous proposons différentes solutions de matériaux envisageables pour le substrat métallisé, les brasures et les métallisations. Dans un second temps, les différents éléments ont été réalisés puis caractérisés à partir d'essais de nanoindentation et de nanorayage. Des essais mécaniques ont permis de caractériser le comportement élastoviscoplastique et l'endommagement des brasures. Ces derniers essais ont servi de base expérimentale à l'identification des paramètres d'un modèle de comportement viscoplastique couplé avec l'endommagement et qui a été spécialement élaboré pour cette étude. Le modèle de comportement a été implémenté dans un code de calcul par éléments finis via une sous-routine. Il permet notamment de simuler le processus de dégradation d'un assemblage. Enfin, ce modèle de comportement a été mis en oeuvre dans des modélisations thermomécaniques de différentes configurations de véhicules test
Use of diamond as constitutive component in power electronics devices is an interesting prospect for the high temperature and high power applications. The main challenge of this research work included in the Diamonix program is the study and the elaboration of a single-crystal diamond substrate with electronic quality and its associated packaging. The designed packaging has to resist to temperatures varying between -50°C and 300°C. We contributed to the choice of the connection materials intended to be used in the final test vehicle and which can handle such temperature gaps. In the first part, we present a state-of-the-art of the various materials solutions for extreme temperatures. Following this study, we propose a set of materials which considered as potential candidates for high temperature packaging. Special focus is given for the most critical elements in power electronic assemblies which are metallizations and solders. Once the materials choice carried out, thin substrate metallizations, solders and DBC coatings are studied using nanoindentation and nanoscratch tests. Mechanical tests were also carried out on solders to study their elastoviscoplastic and damage behavior. The experimental results are used as database for the identification of the parameters of the viscoplastic model coupled with a porous damage law, worked out for the case of solders. The behavior model is implemented as a user subroutine UMAT in a FE code to predict the degradation of a 2D power electronic assembly and various materials configuration for a 3D test vehicle
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Syed-Khaja, Aarief [Verfasser], Jörg [Akademischer Betreuer] Franke, Jörg [Gutachter] Franke, Bertram [Gutachter] Schmidt, Jörg [Herausgeber] Franke, Nico [Herausgeber] Hanenkamp, Marion [Herausgeber] Merklein, Michael [Herausgeber] Schmidt, and Sandro [Herausgeber] Wartzack. "Diffusion Soldering for High-temperature Packaging of Power Electronics / Aarief Syed-Khaja ; Gutachter: Jörg Franke, Bertram Schmidt ; Betreuer: Jörg Franke ; Herausgeber: Jörg Franke, Nico Hanenkamp, Marion Merklein, Michael Schmidt, Sandro Wartzack." Erlangen : FAU University Press, 2018. http://d-nb.info/1179450450/34.

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Baazaoui, Ahlem. "Optimisation thermomécanique du packaging haute température d’un composant diamant pour l’électronique de puissance." Phd thesis, Toulouse, INPT, 2015. http://oatao.univ-toulouse.fr/14490/1/baazaoui.pdf.

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L’accroissement des besoins en énergie électrique pour les systèmes embarqués et leur augmentation de puissance nécessitent de concevoir des systèmes d’électronique de puissance toujours plus performants. Une solution d’avenir concerne la mise en œuvre de composants à base de diamant qui permettent l’augmentation conséquente des tensions et courants mis en jeux, mais aussi de la température maximale de jonction admissible. Le cadre de ces travaux est celui du projet de recherche Diamonix 2, qui concerne l’étude et l’élaboration d’un composant diamant fonctionnant à haute température. L’objectif du travail doctoral présenté ici est l’étude du packaging haute température de ce type de composant diamant. Plusieurs choix de matériaux et de techniques aptes à l’élaboration d’un assemblage de puce diamant sur un substrat métallisé ont été effectués. La caractérisation microstructurale et mécanique de trois types de jonctions ont été réalisées (refusion d’un alliage AuGe, frittage de nano pâtes d’argent et diffusion en phase solide d’indium dans des couches d’argent). Des essais mécaniques de cisaillement de divers assemblages ont permis d’évaluer le comportement thermomécanique des jonctions et des interfaces. Les essais de cisaillement ont servi à l’identification inverse des paramètres interfaciaux d’un modèle de zones cohésives, pour différents types d’interfaces. Des modèles éléments finis d’assemblage, incluant le comportement viscoplastique des jonctions et des lois d’endommagent des interfaces, ont servi à simuler le comportement thermomécanique du packaging d’un composant diamant.
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Wang, Cai Johnson R. Wayne. "High temperature high power SiC devices packaging processes and materials development." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Spring/doctoral/WANG_CAI_24.pdf.

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Yue, Naili. "Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/36278.

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This thesis examines the packaging of high-temperature SiC power electronic devices. Current-voltage measurements were conducted on as-received and packaged SiC power devices. The planar structure was introduced and developed as a substitution for traditional wire-bonding vertical structure. The planar structure was applied to a high temperature (>250oC) SiC power device. Based on the current-voltage (I-V) measurements, the packaging structures were improved, materials were selected, and processes were tightly controlled. This study applies two types of planar structures, the direct bond and the bump bond, to the high-temperature packaging of high-temperature SiC diode. A drop in the reverse breakdown voltage was discovered in the packaging using a direct bond. The root cause for the drop in the breakdown voltage was identified and corrective solutions were evaluated. A few effective methods were suggested for solving the breakdown issue. The forward I-V curve of the planar packaging using direct bond showed excellent results due to the excellent electrical and thermal properties of sintered nanosilver. The packaging using a bump bond as an improved structure was processed and proved to possess desirable forward and reverse I-V behavior. The cross-sections of both planar structures were inspected. High-temperature packaging materials, including nano-silver paste, high-lead solder ball and paste, adhesive epoxy, and encapsulant, were introduced and evaluated. The processes such as stencil printing, low-temperature sintering, solder reflowing, epoxy curing, sputtering deposition, electroplating, and patterning of direct-bond copper (DBC) were tightly controlled to ensure high-quality packaging with improved performance. Finally, the planar packaging of the high temperature power device was evaluated and summarized, and the future work was recommended.
Master of Science
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Riva, Raphaël. "Solution d'interconnexions pour la haute température." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0064/document.

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Le silicium a atteint sa limite d’utilisation dans de nombreux domaines tels que l’aéronautique. Un verrou concerne la conception de composants de puissance pouvant fonctionner en haute température et/ou en haute tension. Le recours à des matériaux à large bande interdite tels que le carbure de Silicium (SiC) apporte en partie une solution pour répondre à ces besoins. Le packaging doit être adapté à ces nouveaux types de composants et nouveaux environnements de fonctionnement. Or, il s’avère que l’intégration planaire (2D), composé de fils de câblage et de report de composants par brasure, ne peut plus répondre à ces attentes. Cette thèse a pour objectif de développer un module de puissance tridimensionnel pour la haute température de type bras d’onduleur destiné à l’aéronautique. Une nouvelle structure 3D originale constituée de deux puces en carbure de silicium, d’attaches par frittage d’argent et d’une encapsulation par du parylène HT a été mise au point. Ses différents éléments constitutifs, les raisons de leur choix, ainsi que la réalisation pratique de la structure sont présentés dans ce manuscrit. Nous nous intéressons ensuite à un mode de défaillance particulier aux attaches d’argent fritté : La migration d’argent. Une étude expérimentale permet de définir les conditions de déclenchement de cette défaillance. Elle est prolongée et analysée par des simulations numériques
Silicon has reached its usage limit in many areas such as aeronautics. One of the challenges is the design of power components operable in high temperature and/or high voltage. The use of wide bandgap materials such as silicon carbide (SiC) provides in part a solution to meet these requirements. The packaging must be adapted to these new types of components and new operating environnement. However, it appears that the planar integration (2D), consisting of wire-bonding and soldered components-attach, can not meet these expectations. This thesis aims to develop a three dimensional power module for the high temperature aeronautics applications. A new original 3D structure made of two silicon carbide dies, silver-sintered die-attaches and an encapsulation by parylene HT has been developed. Its various constituting elements, the reason for their choice, and the pratical realization of the structure are presented in this manuscript. Then, we focus on a failure mode specific to silver-sintered attaches : The silver migration. An experimental study allows to define the triggering conditions of this failure. It is extended and analyzed by numerical simulations
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Books on the topic "High-temperature electronics packaging"

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Patrick, McCluskey F., Grzybowski Richard, and Podlesak Thomas, eds. High temperature electronics. Boca Raton: CRC Press, 1997.

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McCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.

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McCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.

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McCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2019.

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McCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.

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McCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.

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Book chapters on the topic "High-temperature electronics packaging"

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"HighTemperature Electronics Packaging." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.ch97.

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"High Temperature Aluminum Nitride Packaging." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.ch103.

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"Hybrid Materials, Assembly, and Packaging." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.part8.

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"Electronics Packaging and Test Fixturing for the 500C Environment." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.ch105.

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"First-Level Packaging Considerations for the use of Electronic Hardware at High Temperatures." In High Temperature Electronics, edited by F. Patrick McCluskey, Richard Grzybowski, and Thomas Podlesak, 129–62. CRC Press, 2018. http://dx.doi.org/10.1201/9780203751978-5.

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"Second and Third Level Packaging Considerations for the use of Electronic Hardware at Elevated Temperatures." In High Temperature Electronics, edited by F. Patrick McCluskey, Richard Grzybowski, and Thomas Podlesak, 163–204. CRC Press, 2018. http://dx.doi.org/10.1201/9780203751978-6.

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Johnson, R. Wayne. "Electronic Packaging Approaches for High-Temperature Environments." In Extreme Environment Electronics, 777–90. CRC Press, 2017. http://dx.doi.org/10.1201/b13001-67.

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Khanna, Vinod Kumar. "High-temperature passive components, interconnections and packaging." In Extreme-Temperature and Harsh-Environment Electronics Physics, technology and applications. IOP Publishing, 2017. http://dx.doi.org/10.1088/978-0-7503-1155-7ch11.

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Conference papers on the topic "High-temperature electronics packaging"

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Shaddock, David, and Liang Yin. "High temperature electronics packaging: An overview of substrates for high temperature." In 2015 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2015. http://dx.doi.org/10.1109/iscas.2015.7168846.

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Glasheen, Wm Michael, Deidre E. Cusack, and Helmar R. Steglich. "Combustor Flame Sensor With High Temperature Electronics." In ASME 1995 International Gas Turbine and Aeroengine Congress and Exposition. American Society of Mechanical Engineers, 1995. http://dx.doi.org/10.1115/95-gt-323.

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A high temperature solid state turbine flame sensor has been developed and is being tested for eventual use as a combustor performance sensor. It directly senses only the flame deep ultraviolet without any response to hot component infrared energy (> 700 nanometers); the dynamic range is large; and the response time is fast enough for combustor control, i.e., less than 200 milliseconds. The sensor electronics operate up to 250°C and some detector performance data has been taken as high as 540°C as described by Cusack et al (1994). The design uses recently available SiC electronic components, other components specially tested for the application, and proprietary techniques of electronic component packaging. Specific experience in packaging turbine engine optical and temperature sensors is necessary for this unique high temperature electronic technology. A test program for discrete components indicates what elements are available for this temperature range and prototype sensor data from both laboratory qualification tests and engine performance tests verify the design.
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Daoguo Yang, Dongjing Liu, W. D. van Driel, Huib Scholten, L. Goumans, and R. Faria. "Advanced reliability study on high temperature automotive electronics." In High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582777.

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Bower, Greg, Chris Rogan, and Michael Zugger. "Evaluating High Temperature/High Voltage Packaging for SiC Power Electronics." In Power Systems Conference. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2010. http://dx.doi.org/10.4271/2010-01-1793.

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Ashayer, Roya, Samjid H. Mannan, Shahriar Sajjadi, Mike P. Clode, and Mark M. Miodownik. "Nanoparticle Enhanced Solders for High Temperature Environments." In 2007 9th Electronics Packaging Technology Conference. IEEE, 2007. http://dx.doi.org/10.1109/eptc.2007.4469800.

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PHUA, Eric Jian Rong, Ming LIU, Jacob Song Kit LIM, Bokun CHO, and Chee Lip GAN. "Phthalonitrile-Based Electronic Packages for High Temperature Applications." In 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC). IEEE, 2018. http://dx.doi.org/10.1109/eptc.2018.8654340.

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Peng, Jiale, Wei Lan, Yujun Wang, Yiming Ma, and Xiaobing Luo. "Thermal Management of the High-power Electronics in High Temperature Downhole Environment." In 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC). IEEE, 2020. http://dx.doi.org/10.1109/eptc50525.2020.9315026.

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Chidambaram, V., Ho Beng Yeung, Chan Yuen Sing, and D. R. M. Woo. "High-temperature endurable encapsulation material." In 2012 IEEE 14th Electronics Packaging Technology Conference - (EPTC 2012). IEEE, 2012. http://dx.doi.org/10.1109/eptc.2012.6507052.

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Wai, Leong Ching, Seit Wen Wei, Hwang How Yuan, and Daniel Rhee MinWoo. "High temperature die attach material on ENEPIG surface for high temperature (250DegC/500hour) and temperature cycle (−65 to +150DegC) applications." In 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC). IEEE, 2014. http://dx.doi.org/10.1109/eptc.2014.7028376.

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McCluskey, Patrick, and Pedro O. Quintero. "High Temperature Lead-Free Attach Reliability." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33457.

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The increasing demand for electronics capable of operating at temperatures above the traditional 125°C limit is driving major research efforts. Wide band gap semiconductors have been demonstrated to operate at temperatures up to 500°C, but packaging is still a major hurdle to product development. Recent regulations, such as RoHS and WEEE, increase the complexity of the packaging task as they prohibit the use of toxic materials in electronic products; lead being a major concern due to its widespread use in solder attach. In this investigation, a series of Pb-free die attach technologies have been identified as possible alternatives to Pb-based materials for high temperature applications. This paper describes the fabrication sequence used to create attachments with these materials and their resultant microstructure. The long term reliability is also determined by accelerated thermal cycling and physics-of-failure modeling.
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