Journal articles: 'High refractive thin film'

1

Zhang, Z. M., B. I. Choi, T. A. Le, M. I. Flik, M. P. Siegal, and J. M. Phillips. "Infrared Refractive Index of Thin YBa2Cu307 Superconducting Films." Journal of Heat Transfer 114, no. 3 (August 1, 1992): 644–52. http://dx.doi.org/10.1115/1.2911329.

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This work investigates whether thin-film optics with a constant refractive index can be applied to high-Tc superconducting thin films. The reflectance and transmittance of YBa2Cu3O7 films on LaAlO3 substrates are measured using a Fourier-transform infrared spectrometer at wavelengths from 1 to 100 μm at room temperature. The reflectance of these superconducting films at 10 K in the wavelength region from 2.5 to 25 μm is measured using a cryogenic reflectance accessory. The film thickness varies from 10 to 200 nm. By modeling the frequency-dependent complex conductivity in the normal and superconducting states and applying electromagnetic-wave theory, the complex refractive index of YBa2Cu3O7 films is obtained with a fitting technique. It is found that a thickness-independent refractive index can be applied even to a 25 nm film, and average values of the spectral refractive index for film thicknesses between 25 and 200 nm are recommended for engineering applications.

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BRIDGES, A. S., R. GREEF, N. B. H. JONATHAN, A. MORRIS, and G. J. PARKER. "ELLIPSOMETRIC STUDIES OF VERY LOW PRESSURE THERMAL CVD GROWN SILICON NITRIDE THIN FILMS USING HYDRAZOIC ACID AND DICHLOROSILANE." Surface Review and Letters 01, no. 04 (December 1994): 573–76. http://dx.doi.org/10.1142/s0218625x94000692.

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High quality silicon nitride thin films have been grown using dichlorosilane and hydrazoic acid (ratio 1:5) at a total ambient growth pressure of 1×10–4 Torr. Sequential growth studies of successive CVD nitride films over the 974-1068 K temperature range revealed an activation energy of 84 kJmol –1. Film thicknesses and refractive indices were obtained using in situ real-time ellipsometry, and the majority of the grown films displayed a refractive index of 2.0. Ellipsometric data for the growth of an 8 Å thermal-nitride film with a refractive index of 2.0 are also given.

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Weng, L., and S. N. B. Hodgson. "Multicomponent tellurite thin film materials with high refractive index." Optical Materials 19, no. 3 (May 2002): 313–17. http://dx.doi.org/10.1016/s0925-3467(01)00228-2.

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Dhanasekaran, V., T. Mahalingam, S. Rajendran, Jin Koo Rhee, and D. Eapen. "Electroplated CuO Thin Films from High Alkaline Solutions." Journal of New Materials for Electrochemical Systems 15, no. 1 (December 6, 2011): 49–55. http://dx.doi.org/10.14447/jnmes.v15i1.88.

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CuO thin films were coated on ITO substrates by an electrodeposition route through potentiostatic mode. The electrodeposited CuO thin films were characterized and the role of copper sulphate concentration on the structural, morphological and optical properties of the CuO films was studied. Film thickness was measured by a stylus profilometer and found to be in the range between 800 and 1400 nm. The structural characteristics studies were carried out using X-ray diffraction and found that the films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. The estimated microstructural parameters revealed that the crystallite size increases whereas the number of crystallites per unit area decreases with increasing film thickness. SEM studies show that the grain sizes of CuO thin films vary between 100 and 150 nm and also morphologies revealed that the electrodeposited CuO exhibits uniformity in size and shape. The surface roughness is estimated 15 nm of the CuO film were studied by atomic force microscopy. Optical properties of the films were analyzed from absorption and transmittance studies. The optical band gap energy was determined to be 1.5 eV from absorption coefficient. The variation of refractive index (n), extinction coefficient (k), with wavelength was studied and the results are discussed.

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Al-Bataineh, Qais M., Mahmoud Telfah, Ahmad A. Ahmad, Ahmad M. Alsaad, Issam A. Qattan, Hakim Baaziz, Zoulikha Charifi, and Ahmad Telfah. "Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films." Photonics 7, no. 4 (November 18, 2020): 112. http://dx.doi.org/10.3390/photonics7040112.

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We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

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Saekow, B., S. Porntheeraphat, Sakon Rahong, S. Jaruvanawat, and J. Nukeaw. "High Refractive Index Dielectric Prepared by Electron Beam Evaporation for Photonic Crystal Optical Biosensor Application." Advanced Materials Research 93-94 (January 2010): 545–48. http://dx.doi.org/10.4028/www.scientific.net/amr.93-94.545.

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The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.

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Wang, Sheng Zhao, Dan Zhang, Ming Ji Shi, Ying Peng Yin, Lan Li Chen, Peng Hui Luo, Yuan Xu, and Xin Feng Guo. "Sol-Gel Derived ZrO₂-PVP Coatings with High Laser-Induced Damage Threshold." Solid State Phenomena 181-182 (November 2011): 370–73. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.370.

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ZrO2 and ZrO2-PVP sol was obtained by hydrothermal synthesis. And the thin films were prepared with spin coating method. ZrO2 thin films were characterized or examined by many kinds of instruments. Fourier-transform infrared spectroscopy was employed and some infrared absorption peaks weakened when the heating temperature increased. And 1-on-1 laser-induced damage threshold tests on ZrO2 films were carried out. Refractive index and thickness of the ZrO2-PVP films were measured by means of automatic scanning spectroscopic ellipsometer and the refractive index of ZrO2 -PVP film changed with the addition of PVP content.

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Cheng, Ching Hsuang, Wan Yu Wu, and Jyh Ming Ting. "Nanoscaled Multilayer Thin Films Based on GZO." Journal of Nano Research 2 (August 2008): 61–67. http://dx.doi.org/10.4028/www.scientific.net/jnanor.2.61.

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Nanoscaled gallium-doped ZnO (GZO) thin films, bi-layer Pt/GZO thin films, and tri-layer GZO/Pt/GZO thin films were prepared and their characteristics were investigated. These films were deposited on glass substrates using either rf or dc magnetron sputter deposition. The deposition time and the target-to-substrate distance were varied to obtain different total film thicknesses and layer thicknesses. Effects of total film and layer thicknesses on the optical properties and the electrical properties were studied. Theoretical calculations were performed to discuss effect of the thickness on the optical transmittance of the GZO film. As-deposited GZO films show high electrical resistivity, which was greatly reduced by 2 to 3 orders of magnitude due to the introduction of a surface layer of Pt film. However, the optical transmittance was also reduced. This was improved by using an addition anti-refractive GZO surface layer on the Pt/GZO. A GZO/Pt/GZO film exhibiting visible light transmittance greater than 75% and electrical resistivity in the order of 10-4 ohm-cm was obtained.

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ATUCHIN, V. V., V. SH ALIEV, B. M. AYUPOV, and I. V. KOROLKOV. "DECREASED REFRACTIVE INDEX OF NANOCRYSTALLINE ZIRCONIUM OXIDE THIN FILMS." International Journal of Modern Physics B 26, no. 02 (January 20, 2012): 1250012. http://dx.doi.org/10.1142/s0217979211102101.

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Amorphous zirconium oxide (a- ZrO 2) thin films were prepared onto fuzzed quartz substrates by ion beam sputtering deposition (IBSD) method in ( Ar + O 2) gas mixture. Optical parameters of the films were evaluated by laser ellipsometry (λ = 632.8 nm ) and optical transmission measurements. Structural parameters were studied by XRD measurements. Variation of refractive index and film thickness have been defined as a function of time of high-temperature annealing at T = 900° C . Formation of monoclinic zirconium oxide (m- ZrO 2) nanocrystals with diameter of ~60 nm embedded into a- ZrO 2 matrix has been found by XRD analysis after long-time annealing.

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Koo, Junmo, Jae Hyeok Jang, and Byeong-Soo Bae. "Preparation and characteristics of seeded epitaxial (Sr,Ba)Nb2O6 optical waveguide thin films using sol-gel method." Journal of Materials Research 16, no. 2 (February 2001): 430–36. http://dx.doi.org/10.1557/jmr.2001.0065.

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Highly c-axis-oriented (Sr,Ba)Nb2O6 (SBN) films were grown on a seeded MgO(100) substrate via sol-gel method. The substrate was preseeded with epitaxial islands of SBN made by breaking up a continuous film into single-crystal islands by pores. Since the number of epitaxial nuclei was increased at the interface between the film and the substrate, the film on a seeded substrate had better highly orientation than that on unseeded substrate. The film having low Sr content exhibited better epitaxial growth because of the distorted unit-cell network and the change of lattice parameters of SBN thin film. For obtaining excellent optical properties, SBN:75 film was prepared on MgO substrate with SBN:25 composition seed layer. Because of low birefringence of refractive indices in the film having high Sr content, the optical scattering loss by the anisotropy of refractive indices was suppressed.

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11

Abayli, D., and Nilgün Baydogan. "The variations of hydrophilic self-cleaning properties and refractive index dependence in the ZrO2 thin films by Gamma Irradiation." Characterization and Application of Nanomaterials 2, no. 2 (August 7, 2019): 42. http://dx.doi.org/10.24294/can.v2i2.627.

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ZrO2 thin film samples were produced by the sol-gel dip coating method. Four different absorbed dose levels (such as ~ 0.4, 0.7, 1.2 and 2.7 Gray-Gy) were applied to ZrO2 thin films. Hence, the absorbed dose of ZrO2 thin film was examined as physical dose quantity representing the mean energy imparted to the thin film per unit mass by gamma radiation. Modification of the grain size was performed sensitively by the application of the absorbed dose to the ZrO2 thin film. Therefore the grain size reached from ~50 nm to 87 nm at the irradiated ZrO2 thin film. The relationship of the grain size, the contact angle, and the refractive index of the irradiated ZrO2 thin film was investigated as being an important technical concern. The irradiation process was performed in a hot cell by using a certified solid gamma ray source with 0.018021 Ci as an alternative technique to minimize the utilization of extra toxicological chemical solution. Antireflection and hydrophilic properties of the irradiated ZrO2 thin film were slightly improved by the modification of the grain size. The details on the optical and structural properties of the ZrO2 thin film were examined to obtain the optimum high refractive index, self-cleaning and anti-reflective properties.

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Cai, Haoyuan, Shihan Shan, and Xiaoping Wang. "High Sensitivity Surface Plasmon Resonance Sensor Based on Periodic Multilayer Thin Films." Nanomaterials 11, no. 12 (December 15, 2021): 3399. http://dx.doi.org/10.3390/nano11123399.

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Surface plasmon resonance (SPR) biosensors consisting of alternate layers of silver (Ag) and TiO2 thin film have been proposed as a high sensitivity biosensor. The structure not only prevents the Ag film from oxidation, but also enhances the field inside the structure, thereby improving the performance of the sensor. Genetic algorithm (GA) was used to optimize the proposed structure and its maximum angular sensitivity was 384°/RIU (refractive index unit) at the refractive index environment of 1.3425, which is about 3.12 times that of the conventional Ag-based biosensor. A detailed discussion, based on the finite difference time domain (FDTD) method, revealed that an enhanced evanescent field at the top layer–analyte region results in the ultra-sensitivity characteristic. We expect that the proposed structure can be a suitable biosensor for chemical detection, clinical diagnostics, and biological examination.

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Jokanović, Vukoman, Božana Čolović, Miloš Nenadović, Anka Trajkovska Petkoska, Miodrag Mitrić, Bojan Jokanović, and Ilija Nasov. "Ultra-High and Near-Zero Refractive Indices of Magnetron Sputtered Thin-Film Metamaterials Based on TixOy." Advances in Materials Science and Engineering 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/4565493.

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Metamaterials based onTixOywith ultra-high and near-zero refractive indices were obtained by DC magnetron sputtering. The data on refractive indices, extinction coefficients, film thickness, and band gaps, obtained by spectroscopic ellipsometry, showed very high potential of these materials as metamaterials. Phase analysis performed by XRD revealed the presence of titanium phases with lower titanium oxidation states resulting from high concentration of oxygen vacancies, which are crucial for such extraordinary jumps and drops of refractive indices. Numerous band gaps for direct and indirect electron transitions additionally confirmed unique properties of these materials.

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Mahdi, Safaa Mohsin. "Morphological and optical properties of V2O5:TiO2 thin film prepared by PLD technique." Iraqi Journal of Physics (IJP) 17, no. 43 (November 29, 2019): 67–76. http://dx.doi.org/10.30723/ijp.v17i43.464.

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In this work, pure and doped Vanadium Pentoxide (V2O5) thin films with different concentration of TiO2 (0, 0.1, 0.3, 0.5) wt were obtained using Pulse laser deposition technique on amorphous glass substrate with thickness of (250)nm. The morphological, UV-Visible and Fourier Transform Infrared Spectroscopy (FT-IR) were studied. TiO2 doping into V2O5 matrix revealed an interesting morphological change from an array of high density pure V2O5 nanorods (~140 nm) to granular structure in TiO2-doped V2O5 thin film .Transform Infrared Spectroscopy (FTIR) are used to analyze structural properties of as-deposit. The transmittance and absorption of each film, in the spectral range 300 to 1100 nm, were measured from which the optical constants (Refractive index, Absorption coefficient, Extinction coefficient and Energy gap) were determined .The energy band gap of the films was found to be change from (2.38 to 2.9) eV when the concentration of TiO2 increases from (2.78 to 2.9 ) eV The results showed a significant improvement in the transmittance and refractive index in TiO2 doped V2O5 thin films .All measured values were in consistent with other previous studies.

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KRISHNA, M. GHANASHYAM, and A. K. BHATTACHARYA. "THICKNESS AND OXYGEN PRESSURE DEPENDENT OPTICAL PROPERTIES OF NIOBIUM OXIDE THIN FILMS." International Journal of Modern Physics B 13, no. 04 (February 10, 1999): 411–18. http://dx.doi.org/10.1142/s0217979299000266.

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The optical properties of niobium oxide thin films in the thickness range between 75 and 200 nm have been studied. The films were deposited by dc magnetron sputtering and it was found that the refractive index, extinction coefficient and the absorption edge were all strongly dependent on the oxygen pressure during sputtering as well as the thickness of the deposited films. In general, the low thickness films had a lower refractive index than the high thickness films. The highest refractive index obtained was 2.46 at a wavelength of 650 nm for the film deposited at an oxygen pressure of 2 mTorr and to a thickness of 200 nm. The low thickness (~ 120 nm) films showed an initial decrease in refractive index, with oxygen pressure increasing above a critical value. The thicker films, however showed the opposite behaviour, increasing initially and decreasing marginally above the same critical pressure. The absorption edge showed a critical value of thickness above and below which it decreased and a critical value of oxygen pressure during sputtering above and below which it increased. The band gap values varied from 3.3 to 3.6 eV with the thinner films showing the higher band gap. The observed behaviour was explained using the single effective Lorentzian oscillator model.

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Takafuji, Makoto, Maino Kajiwara, Nanami Hano, Yutaka Kuwahara, and Hirotaka Ihara. "Preparation of High Refractive Index Composite Films Based on Titanium Oxide Nanoparticles Hybridized Hydrophilic Polymers." Nanomaterials 9, no. 4 (April 2, 2019): 514. http://dx.doi.org/10.3390/nano9040514.

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Optical materials with high refractive index (n) have been rapidly improved because of urgent demands imposed by the development of advanced photonic and electronic devices such as solar cells, light emitting diodes (LED and Organic LED), optical lenses and filters, anti-reflection films, and optical adhesives. One successful method to obtain high refractive index materials is the blending of metal oxide nanoparticles such as TiO2 and ZrO2 with high n values of 2.1–2.7 into conventional polymers. However, these nanoparticles have a tendency to agglomerate by themselves in a conventional polymer matrix, due to the strong attractive forces between them. Therefore, there is a limitation in the blending amount of inorganic nanoparticles. In this paper, various hydrophilic polymers such as poly(N-hydroxyl acrylamide) (pHEAAm), poly(vinyl alcohol), poly(ethylene glycol), and poly(acrylic acid) were examined for preparation of high refractive index film based on titanium oxide nanoparticle (TiNP) dispersed polymer composite. The hydrogen bonding sites in these hydrophilic polymers would improve the dispersibility of inorganic nanoparticles in the polymer matrix. As a result, pHEAAm exhibited higher compatibility with titanium oxide nanoparticles (TiNPs) than other water-soluble polymers. Transparent hybrid films were prepared by mixing pHEAAm with TiNPs and drop casting the mixture onto a glass plate. The refractive indices of the films were in good agreement with calculated values. The compatibility of TiNPs with pHEAAm was dependent on the surface characteristics of TiNPs. TiNPs with the highest observed compatibility could be hybridized with pHEAAm at concentrations of up to 90 wt%, and the refractive index of the corresponding film reached 1.90. The high compatibility of TiNPs with pHEAAm may be related to the hydrophilicity and amide and hydroxyl moieties of pHEAAm, which cause hydrogen bond formation on the TiO2 surface. The obtained thin film was slightly yellow due to the color of the original TiNP dispersion; however, the transmittance of the film was higher than 80% in the wavelength range from 480 to 900 nm.

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Lee, Hanbin, Minjeong Park, Minhyon Jeon, and Byeongcheol Kim. "Multi-Layer Anti-Reflection Film Based on SiOx and NbOx by DC Pulse Sputter System with Inductively Coupled Plasma Source." Crystals 10, no. 6 (May 26, 2020): 424. http://dx.doi.org/10.3390/cryst10060424.

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The research on anti-reflection (AR) optical thin film has long sought to obtain high-performance reflection and transmission properties in photovoltaic and photonic devices. The study of multi-layer AR (M-AR) film with low- and high-refractive-index materials is essential to increase the selective transmittance and reflectance at visible light wavelengths. However, M-AR film exhibits low substrate adhesion and slow deposition rates. We developed a DC pulse sputter system incorporating an inductively coupled plasma (ICP) source of high density to obtain high-quality M-AR film. Six-layer AR optical thin film was simulated using SiOx as a low-refractive-index material and NbOx as a high-refractive-index material. The multi-layer AR film based on SiOx and NbOx (M-SiNb) was fabricated using DC pulse sputtering which incorporated an ICP source. M-SiNb film exhibited better properties than the optical simulation results at 550 nm (transmittance: 99.19%, reflectance: 0.87%). Similarly, the M-SiNb film fabricated using the ICP source had high transmittance and reflectance in the visible light region and excellent adhesion to the substrate notwithstanding the various mechanical tests it was subjected to. Consequently, the development of the DC pulse sputter system included the ICP source, and this study represents important research in the field of optical film.

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Phelan, P. E., G. Chen, and C. L. Tien. "Thickness-Dependent Radiative Properties of Y-Ba-Cu-O Thin Films." Journal of Heat Transfer 114, no. 1 (February 1, 1992): 227–33. http://dx.doi.org/10.1115/1.2911251.

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Some applications of high-temperature superconductors where their radiative behavior is important, such as bolometers, optically triggered switches and gates, and space-cooled electronics, require the superconductor to be in the form of a very thin film whose radiative properties cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. Here, calculations of the spectral, normal-incidence absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates suggest that a decrease in the film thickness often leads to an increase in both the film and the film/substrate absorptance. Furthermore, both can exhibit a maximum at some optimal value of film thickness. Room-temperature experiments verify the qualitative features of the spectral film/substrate absorptance, indicating the assumption that the film is a smooth, continuous slab with a refractive index equal to that of well-aligned bulk Y-Ba-Cu-O is valid, at least in the normal state and for films as thin as 35 nm.

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Chau, Joseph Lik Hang, Yu-Ming Lin, Ai-Kang Li, Wei-Fang Su, Kuo-Shin Chang, Steve Lien-Chung Hsu, and Tung-Lin Li. "Transparent high refractive index nanocomposite thin films." Materials Letters 61, no. 14-15 (June 2007): 2908–10. http://dx.doi.org/10.1016/j.matlet.2007.01.088.

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Kayani, Zohra Nazir, Maryam Iqbal, Saira Riaz, Rehana Zia, and Shahzad Naseem. "Fabrication and properties of zinc oxide thin film prepared by sol-gel dip coating method." Materials Science-Poland 33, no. 3 (September 1, 2015): 515–20. http://dx.doi.org/10.1515/msp-2015-0085.

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AbstractZnO thin films were deposited on a glass substrate by dip coating technique using a solution of zinc acetate, ethanol and distilled water. Optical constants, such as refractive index n and extinction coefficient k. were determined from transmittance spectrum in the ultraviolet-visible-near infrared (UV-Vis-NIR) regions using envelope methods. The films were found to exhibit high transmittance, low absorbance and low reflectance in the visible regions. Absorption coefficient α and the thickness of the film t were calculated from interference of transmittance spectra. The direct optical band gap of the films was in the range of 3.98 to 3.54 eV and the thickness of the films was evaluated in the range of 173 to 323 nm, while the refractive index slightly varied in the range of 1.515 to 1.622 with an increase in withdrawal speed from 100 to 250 mm/s. The crystallographic structure of the films was analyzed with X-ray diffractometer. The films were amorphous in nature.

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Tallant, David R., Karen L. Higgins, and Alan F. Stewart. "Application of Waveguide Raman Spectroscopy to High-Index Dielectric Films." Applied Spectroscopy 42, no. 2 (February 1988): 326–30. http://dx.doi.org/10.1366/0003702884428211.

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Waveguide Raman spectroscopy has been applied to the analysis of single-layer, refractory-oxide, thin-film coatings on fused silica. With the use of the film as a waveguide, the interaction of the laser probe beam with the film is maximized, and interference from the silica substrate is minimized. An amorphous film of Ta2O5 was found to be an excellent waveguide, yielding an intense Raman spectrum. Even though polycrystalline films of Y2O3, ZrO2, HfO2, and ThO2 were found to be poor waveguides, they still yielded Raman spectra containing useful structural information. Such Raman spectra showed that the ThO2 film was initially in an unusual structural form, which spontaneously transformed into cubic ThO2. Even for films yielding relatively weak Raman bands, substrate Raman scattering was not a serious interference. Representative spectra are presented, along with a brief discussion of the requirements for coupling optical beams into films with large refractive indices.

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Zhang, Gong, Xiuhua Fu, Shigeng Song, Kai Guo, and Jing Zhang. "Influences of Oxygen Ion Beam on the Properties of Magnesium Fluoride Thin Film Deposited Using Electron Beam Evaporation Deposition." Coatings 9, no. 12 (December 7, 2019): 834. http://dx.doi.org/10.3390/coatings9120834.

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Magnesium fluoride (MgF2) materials are commonly used for near/medium infrared anti-reflection optical coatings due to their low refractive index and wide-range transparency. Ion assistant deposition is an important technique to increase the density of MgF2 and reduce absorption around 2.94 µm caused by high porosity and moisture adsorption. However, the excessive energy of Argon ion will induce a color center and; therefore, lead to UV/Visible absorption. In this paper, oxygen ion was introduced to reduce the color center effect in MgF2 thin film deposited using electron beam evaporation with ion assistant. The films were deposited on Bk7 and single crystal silicon substrates under various oxygen ion beam currents. The microstructure, optical constant, film density, stress, and adhesion are investigated, including the absorption properties at the infrared hydroxyl (–OH) vibration peak. The results show that as the oxygen ion beam current increases, the absorption value at the position of the infrared OH vibration, defects, and stress of the film decrease, while the refractive index increases. However, MgF2 has poor adhesion using oxygen ion-assisted deposition. Thin MgF2 film without ion beam assistant was used as adhesive layer, high density, and low absorption MgF2 film with good adhesion was obtained.

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Remashan, K., J. H. Jang, D. K. Hwang, and S. J. Park. "ZnO-based thin film transistors having high refractive index silicon nitride gate." Applied Physics Letters 91, no. 18 (October 29, 2007): 182101. http://dx.doi.org/10.1063/1.2804566.

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Möls, Kristel, Lauri Aarik, Hugo Mändar, Aarne Kasikov, Taivo Jõgiaas, Aivar Tarre, and Jaan Aarik. "Influence of α-Al2O3 Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO2 Phases." Coatings 11, no. 11 (October 21, 2021): 1280. http://dx.doi.org/10.3390/coatings11111280.

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High-density phases of TiO2, such as rutile and high-pressure TiO2-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO2-II with anatase and rutile have been considered promising materials for catalytic applications. In this work, the atomic layer deposition of TiO2 on α-Al2O3 (0 0 0 1) (c-sapphire) was used to grow thin films containing different combinations of TiO2-II, anatase, and rutile, and to investigate the properties of the films. The results obtained demonstrate that in a temperature range of 300–400 °C, where transition from anatase to TiO2-II and rutile growth occurs in the films deposited on c-sapphire, the phase composition and other properties of a film depend significantly on the film thickness and ALD process time parameters. The changes in the phase composition, related to formation of the TiO2-II phase, caused an increase in the density and refractive index, minor narrowing of the optical bandgap, and an increase in the hardness of the films deposited on c-sapphire at TG ≥ 400 °C. These properties, together with high catalytic efficiency of mixed TiO2-II and anatase phases, as reported earlier, make the films promising for application in various functional coatings.

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Ting, Chu Chi, and Sie Ping Chang. "Structural and Optical Properties of ZnO Nanorods Thin Films by Solution-Growth Method." Advanced Materials Research 225-226 (April 2011): 597–600. http://dx.doi.org/10.4028/www.scientific.net/amr.225-226.597.

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Highly c-axis-oriented ZnO nanorods thin films were obtained on silica glass substrates by a simple solution-growth technique. The most compact and vertically-aligned ZnO nanorods thin film with the thickness of ~800 nm and average hexagonal grain size of ~200 nm exhibits the average visible transmittance 85%, refractive index 1.74, and packing density 0.84. As we demonstrate here, the solution-growth technique was used to produce high-quality and dense ZnO nanorods thin films, and is an easily controlled, low-temperature, low-cost, and large-scale process for the fabrication of optical-grade thin films.

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Kim, Do Heung, Wontae Jang, Keonwoo Choi, Ji Sung Choi, Jeffrey Pyun, Jeewoo Lim, Kookheon Char, and Sung Gap Im. "One-step vapor-phase synthesis of transparent high refractive index sulfur-containing polymers." Science Advances 6, no. 28 (July 2020): eabb5320. http://dx.doi.org/10.1126/sciadv.abb5320.

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High refractive index polymers (HRIPs) have recently emerged as an important class of materials for use in a variety of optoelectronic devices including image sensors, lithography, and light-emitting diodes. However, achieving polymers having refractive index exceeding 1.8 while maintaining full transparency in the visible range still remains formidably challenging. Here, we present a unique one-step vapor-phase process, termed sulfur chemical vapor deposition, to generate highly stable, ultrahigh refractive index (n > 1.9) polymers directly from elemental sulfur. The deposition process involved vapor-phase radical polymerization between elemental sulfur and vinyl monomers to provide polymer films with controlled thickness and sulfur content, along with the refractive index as high as 1.91. Notably, the HRIP thin film showed unprecedented optical transparency throughout the visible range, attributed to the absence of long polysulfide segments within the polymer, which will serve as a key component in a wide range of optical devices.

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ATUCHIN, V. V., T. KHASANOV, V. A. KOCHUBEY, L. D. POKROVSKY, and T. A. GAVRILOVA. "STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO2N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING." International Journal of Modern Physics B 23, no. 23 (September 20, 2009): 4817–23. http://dx.doi.org/10.1142/s0217979209053813.

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Molybdenum nitride films γ- Mo 2 N/Si have been fabricated with reactive magnetron sputtering in ( N 2 + Ar ) gas mixture. Phase composition of the films has been defined with reflection high energy electron diffraction. Refractive index and extinction coefficient of γ- Mo 2 N have been evaluated with laser ellipsometry at λ = 632.8 and 488.0 nm. Upper limit of γ- Mo 2 N film thickness measurable with laser ellipsometry has been found to be ~80 nm.

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Chu, Ann Kuo, and Wei Chen Tien. "Conductive Distributed Bragg Reflector Fabricated at Low Temperature." Applied Mechanics and Materials 421 (September 2013): 364–68. http://dx.doi.org/10.4028/www.scientific.net/amm.421.364.

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A conductive DBR electrode fabricated using the single Indium tin oxide (ITO) conductive material is proposed. The high refractive index of the dense ITO film was achieved by RF sputtering at room temperature and the porous ITO film with low refractive index was prepared by applying supercritical CO2(SCCO2) treatment at 60 °C on gel-coated ITO thin films. The index contrast of the ITO bilayers was higher than 0.5 at a wavelength of 550 nm. In addition, small deviations on the optical thickness of the ITO bilayers were observed during the DBR stacking processes. For the DBR comprising 4 periods ITO bilayers, the reflectance and sheet resistance of 72.8% and 35 Ω/ were achieved.

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Tien, Chuen-Lin, Kuan-Po Chen, and Hong-Yi Lin. "Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films." Materials 14, no. 5 (February 26, 2021): 1101. http://dx.doi.org/10.3390/ma14051101.

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We present an experimental method for evaluating interfacial force per width and predicting internal stress in mid-infrared band-pass filters (MIR-BPF). The interfacial force per width between the two kinds of thin-film materials was obtained by experimental measurement values, and the residual stress of the multilayer thin films was predicted by the modified Ennos formula. A dual electron beam evaporation system combined with ion-assisted deposition was used to fabricate mid-infrared band-pass filters. The interfacial forces per width for Ge/SiO2 and SiO2/Ge were 124.9 N/m and 127.6 N/m, respectively. The difference between the measured stress and predicted stress in the 23-layer MIR-BPF was below 0.059 GPa. The residual stresses of the four-layer film, as well as the 20-layer and 23-layer mid-infrared band-pass filter, were predicted by adding the interface stress to the modified Ennos formula. In the four-layer film, the difference between the predicted value and the measured stress of the HL (high–low refractive index) and LH (low–high refractive index) stacks were −0.384 GPa for (HL)2 and −0.436 GPa for (LH)2, respectively. The predicted stress and the measured stress of the 20-layer mid-infrared filter were −0.316 GPa and −0.250 GPa. The predicted stress and the measured stress of the 23-layer mid-infrared filter were −0.257 GPa and −0.198 GPa, respectively.

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BASANTAKUMAR SHARMA, H. "STRUCTURAL AND OPTICAL PROPERTIES OF SOL-GEL DERIVED BARIUM TITANATE THIN FILM." International Journal of Modern Physics B 21, no. 11 (April 30, 2007): 1837–49. http://dx.doi.org/10.1142/s0217979207037028.

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Ferroelectric barium titanate ( BaTiO 3) films have been prepared from barium acetate and titanium (IV) isopropoxide precursors by the sol-gel technique. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous and crystallized to the tetragonal phase after annealing at 700°C for one hour in air. The lattice constants "a" and "c" were found to be 3.996 Å and 4.040 Å respectively. The X-ray density of the crystalline film was about 6.00 g · cm -3. The amorphous film showed very high transparency (~95%), which decreased slightly after crystallization (~90%). The band gap and the refractive index of the amorphous and crystalline films were estimated. The influences of porosity on the optical properties of films have also been investigated. The optical dispersion data are also analyzed in the light of the single oscillator model, and are discussed.

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Zarchi, Meysam, Shahrokh Ahangarani, and Maryam Zare Sanjari. "Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure." Metallurgical and Materials Engineering 20, no. 2 (July 30, 2014): 89–96. http://dx.doi.org/10.5937/metmateng1402089m.

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conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with silane (SiH4) and nitrous oxide (N2O) as precursor gases. The ellipsometer and stress measurement system were used to test the thickness and refractive index uniformity of the SiO2 film fabricated. The effects of radio frequency (RF) power chamber pressure and N2O/SiH4 flow ratio on the properties of SiO2 film were studied. The results show that the refractive index of SiO2 film is mainly determined by N2O/SiH4 flow ratio .Moreover, the formation of SiO2 thin films is confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive indices of the films measured by ellipsometry C-V measurement show that the electrical properties are directly related to process parameters and Si/SiO2 interface. The MIS structures were also fabricated from optimized SiO2 layer to study C-V measurement and to estimate interface, oxide and effective border traps density. The deposited SiO2 films have good uniformity, compact structure, high deposition rate, low deposition temperature and controllable stress, which can be widely, used in semiconductor devices.

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Tao, Longbiao, Shuo Deng, Hongyun Gao, Haifei Lv, Xiaoyan Wen, and Min Li. "Experimental Investigation of the Dielectric Constants of Thin Noble Metallic Films Using a Surface Plasmon Resonance Sensor." Sensors 20, no. 5 (March 9, 2020): 1505. http://dx.doi.org/10.3390/s20051505.

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Gold and silver have an extremely low refractive index value of about 0.04 in the visible to near infrared (NIR) regions, and this induces a relative error of about 50% in refractive index measurements. This can lead to a large uncertainty in the imaginary part of the dielectric constants. A large difference exists between the experimental results and the classic models. The surface plasmon resonance (SPR) sensors, which use tens of nanometer thick noble metal film as the sensing layer, show ultra-high sensitivity (reaching 10−8 RIU) in this spectral range. As the spectral sensitivity and amplitude of SPR curves depend on the thickness and the dielectric constant of the sensing layer, we obtained high precision optical constants of the noble metal film using a multi-wavelength angle-modulated SPR sensing technology. The dielectric constant inferred from the parameters of the SPR curves, rather than from the refractive index and absorption ratio of noble metals, introduced a relative error within 10% of the resonance angle measurement. The measurement results demonstrate that the dielectric constants of gold and silver nano-films are more consistent with the widely used experimental results than with the classical theoretical model and always fall in the upper half of the imaginary part of the uncertainty range in the spectra of 500–900 nm.

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Ni, Jia Miao, and Qi Bin Gu. "Optimization of Optical Properties of SiO₂/TiO₂/SiO₂ Multilayer Films." Key Engineering Materials 509 (April 2012): 294–302. http://dx.doi.org/10.4028/www.scientific.net/kem.509.294.

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The computer aid simulation of optical properties of thin films has been used to optimize SiO2/TiO2/SiO2 multilayer films to obtain high transparent films in this paper. The maximum transmittance at the visible light wavelength range is proper criteria for optical films optimizing design. The effect of design parameters (film thickness and refractive index) on optical properties of SiO2/TiO2/SiO2 multilayer films were also discussed in detail. According to the result of optimization, high quality SiO2/TiO2/SiO2 multilayer film with a maximum of > 99% at visible light wavelength range can be achieved on the glass.

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El-Nahhas, M. M., H. Abdel-Khalek, and E. Salem. "Structural and Optical Properties of Nanocrystalline 3,4,9,10-Perylene-Tetracarboxylic-Diimide Thin Film." Advances in Condensed Matter Physics 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/698934.

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Thin films of nanocrystalline 3,4,9,10-perylene-tetracarboxylic-diimide (PTCDI) were prepared on quartz substrates by thermal evaporation technique. The structural properties were identified by transmission electron microscopy (TEM) and the X-ray diffraction (XRD). The optical properties for the films were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 200 to 2500 nm. The optical constants (refractive indexnand absorption indexk) were calculated and found to be independent on the film thickness in the measured film thickness range 117–163 nm. The dispersion energy (Ed), the oscillator energy (Eo), and the high-frequency dielectric constantε∞were obtained. The energy band model was applied, and the types of the optical transitions responsible for optical absorption were found to be indirect allowed transition. The onset and optical energy gaps were calculated, and the obtained results were also discussed.

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Wang, Sheng Zhao, Li Na Zhang, Chun Juan Nan, and Da Yong Huang. "Effect of Precursor Concentration on the Ideal ZrO₂ Sols and Thin Films." Key Engineering Materials 538 (January 2013): 69–72. http://dx.doi.org/10.4028/www.scientific.net/kem.538.69.

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ZrO2 sols were prepared with hydrothermal synthesis method. The ZrO2films were characterized or examined by many kinds of instruments. With different content of zirconium oxychloride octahydrate, the particle sizes of ZrO2 sols are different from 3nm to 25nm. And 1-on-1 laser-induced damage threshold tests on ZrO2 films were carried out with a Q–switched Nd-YAG high power laser at 1064 nm. The experimental results showed that the ZrO2 sols is suitable for preparing ZrO2thin film and the refractive index and thickness of this thin films achieve our requirement.

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Tien, Chuen-Lin, Tzu-Chi Mao, and Chi-Yuan Li. "Lossy Mode Resonance Sensors Fabricated by RF Magnetron Sputtering GZO Thin Film and D-Shaped Fibers." Coatings 10, no. 1 (January 1, 2020): 29. http://dx.doi.org/10.3390/coatings10010029.

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We demonstrate a new refractive index (RI) and salinity sensor based on a lossy mode resonance (LMR) effect which combines fiber-optic side-polishing and radio-frequency (RF) sputtering techniques. The side-polished fiber can enhance optical fibers to generate an evanescent field in sensing applications. Gallium-doped zinc oxide (GZO) thin films produce a high attenuation lossy mode resonance effect that permits a highly sensitive refractive index and salinity fiber sensor. GZO thin film was prepared by an RF magnetron sputtering method. The thickness of the D-shaped fiber sensing device was 74.7 μm, and a GZO film thickness of 67 nm was deposited on the polished surface of the D-shaped fiber to fabricate LMR type liquid salinity sensors. The sensitivity of 3637.8 nm/RIU was achieved in the RI range of 1.333 to 1.392. To investigate the sensitivities of LMR salinity sensors, the NaCl solution salinities of 0%, 50%, 100%, 150%, 200%, and 250% were measured in this work. The experimental result shows that the sensitivity of the salinity sensor is 0.964 nm per salinity unit (SU).

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Fu, Xiu Hua, Yong Gang Pan, Dong Mei Liu, Jing Zhang, and Xiao Juan Wang. "Research of Thin Film for Laser Polarization Beam Splitter." Key Engineering Materials 645-646 (May 2015): 381–87. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.381.

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Based on the design theory of film stack,H4 and SiO2 were selected as the high and low refractive index materials respectively. Through optimization by Macleod and TFCalc software, plus considering the internal electric field intensity distribution of film and laser induced damage threshold as well,the beam-splitting film with Tp=65±5% and Ts=30±5% in the 600-700 band in condition of 45 °± 3 ° incident angle has been achieved. Adopting electron beam ion assisted deposition system to development, the deposition parameters of materials has been optimized via orthogonal matrix experiment. The fabrication of thin film for laser polarization beam splitter has been succeeded. Its optical properties, mechanical properties and resistance to environmental test of the film have been approved to meet all using requirements.

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Potter, B. G., D. Dimos, and M. B. Sinclair. "Waveguide refractometry as a probe of thin film optical uniformity." Journal of Materials Research 12, no. 2 (February 1997): 546–51. http://dx.doi.org/10.1557/jmr.1997.0078.

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Optical inhomogeneities through the thickness of a sol-gel-derived, spin-coated Pb(Zr,Ti)O3 (PZT) thin film have been evaluated using prism-coupled waveguide refractometry. Unusual waveguide coupling angle behavior has been treated using a multilayer model to describe the optical characteristics of the film. Waveguide refractometry measurements, performed after incremental reductions in film thickness, were used to develop a consistent model for optical inhomogeneity through the film thickness. Specifically, a thin film layer model, consisting of alternating layers of high and low refractive index material, was found to accurately predict irregularities in transverse-electric (TE) mode coupling angles exhibited by the film. This layer structure has a spatial periodicity that is consistent with the positions of the upper film surface at intermediate firings during film synthesis. The correlation emphasizes the impact of the multistep thin-film deposition approach on the optical characteristics of the resulting thin film.

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Grigoriev, F. V., V. B. Sulimov, and A. V. Tikhonravov. "Structure and properties of the low-energy deposited TiO₂ thin films: results of the molecular dynamics simulation." Journal of Physics: Conference Series 2015, no. 1 (November 1, 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2015/1/012051.

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Abstract The classical molecular dynamics simulation of the low-energy glancing angle deposition of titanium dioxide films is performed. The deposition angle varies from 60° to 80°. It is found that the film structure consists of parallel slanted columns which lead to the anisotropy of films properties. The difference between the main components of the refractive index tensor is about 0.14, which is close to the values obtained for high-energy titanium dioxide films and larger than 0.03 obtained earlier for silicon dioxide films.

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LI, HONGXIA, XIN WU, RENGUO SONG, and JIYANG WANG. "OPTICAL WAVEGUIDE FABRICATION AND REFRACTIVE INDEX CHARACTERIZATION OF Nd:LuVO4 THIN FILMS BY PULSED LASER DEPOSITION." Surface Review and Letters 14, no. 06 (December 2007): 1079–82. http://dx.doi.org/10.1142/s0218625x07010652.

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High-quality Nd:LuVO 4 thin films have been grown on silica glass substrates by using a pulsed laser deposition technique. X-ray diffraction results show that the as-deposited Nd:LuVO 4 film is basically oriented polycrystalline, and strong (200) peak was revealed. The waveguide property was characterized by the prism-coupling method. The refractive index of the propagation mode is higher than that of the silica glass substrate which means that the dips correspond to real propagation mode, where the light could be well defined. The surface morphology of the deposited Nd:LuVO 4 films was also observed by using an atomic force microscopy.

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Tien, Chuen-Lin, Hong-Yi Lin, and Shu-Hui Su. "High Sensitivity Refractive Index Sensor by D-Shaped Fibers and Titanium Dioxide Nanofilm." Advances in Condensed Matter Physics 2018 (2018): 1–6. http://dx.doi.org/10.1155/2018/2303740.

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This paper presents a high sensitivity liquid refractive index (RI) sensor based on lossy mode resonance (LMR) effect. The D-shaped fibers coated with nanosized titanium dioxide (TiO2) thin film as a sensing head were submerged into different refractive index solutions. The variations in the optical spectrum of the proposed RI sensor with different refractive index solutions were measured. The LMR resonance peaks were used to determine the wavelength shifts with different refractive index solutions. The results show that the optical spectrum peaks shifted towards the longer wavelength side with increasing the refractive index. For the proposed fiber sensing head with a polishing residual thickness of 72 μm, the maximum shift of the absorption peak was 264 nm. The sensitivity of the proposed RI sensor was 4122 nm/RIU for the refractive index range from 1.333 to 1.398.

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Liu, Wen Ting, and Zheng Tang Liu. "Spectroscopic Ellipsometry Study on HfO₂ Thin Films Deposited at Different RF Powers." Advanced Materials Research 287-290 (July 2011): 2165–68. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.2165.

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HfO2thin films were prepared by radio frequency (RF) magnetron sputtering at different RF powers. The influence of RF power on optical properties of HfO2thin films were investigated by spectroscopic ellipsometry (SE) toghther with high-resolution transmission electron microscopy (HR-TEM) and Fourier transform infrared spectroscopy (FTIR). The results show that there is a SiO2interface layer between HfO2thin film and Si substrate. A four layer structured model consisting of SiO2interfacial layer was used to fit the SE data. With the increasing RF power, the refractive index of the HfO2thin films increases firstly and then decreases and, the extinction coefficient of the HfO2thin films increases little.

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Welser, Roger E., Adam W. Sood, Jaehee Cho, E. Fred Schubert, Jennifer L. Harvey, Nibir K. Dhar, and Ashok K. Sood. "Nanostructured Transparent Conductive Oxides for Photovoltaic Applications." MRS Proceedings 1493 (2013): 23–28. http://dx.doi.org/10.1557/opl.2013.30.

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ABSTRACTOblique-angle deposition is used to fabricate indium tin oxide (ITO) optical coatings with a porous, columnar nanostructure. Nanostructured ITO layers with a reduced refractive index are then incorporated into antireflection coating (ARC) structures with a step-graded refractive index design, enabling increased transmittance into an underlying semiconductor over a wide range of wavelengths of interest for photovoltaic applications. Low-refractive index nanostructured ITO coatings can also be combined with metal films to form an omnidirectional reflector (ODR) structure capable of achieving high internal reflectivity over a broad spectrum of wavelengths and a wide range of angles. Such conductive high-performance ODR structures on the back surface of a thin-film solar cell can potentially increase both the current and voltage output by scattering unabsorbed and emitted photons back into the active region of the device.

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Kashuba, A. I., B. Andriyevsky, I. V. Semkiv, H. A. Ilchuk, R. Y. Petrus, and Ya M. Storozhuk. "First-principle calculations of band energy structure of CdSe0.5S0.5 solid state solution thin films." Physics and Chemistry of Solid State 23, no. 1 (January 27, 2022): 52–56. http://dx.doi.org/10.15330/pcss.23.1.52-56.

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The electronic band structure of the solid-state CdSe0.5S0.5 thin film solution in the framework of the density functional theory calculations are investigated. The structure of the sample is constructed on the original binary compound CdS, which crystallizes in the wurtzite phase. Transformations of the electronic energy spectra for the solid-state CdSe0.5S0.5 solution, which occur in the process of transition from bulk crystals to thin films, are analyzed. The refractive index and high-frequency dielectric constant are calculated. All of the calculated parameters correlate well with the known experimental data.

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Prince and M. Zulfequar. "Study of optical properties of photo annealed solution based As₂S₃ chalcogenide glass thin films." IOP Conference Series: Materials Science and Engineering 1221, no. 1 (March 1, 2022): 012032. http://dx.doi.org/10.1088/1757-899x/1221/1/012032.

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Abstract Chalcogenide glasses have wide range of applications in Mid- IR region due to its attractive optical properties. In this paper, we study the influence of UV light on the optical properties of solution based A2S3 chalcogenide thin films by examining transmission spectraand further we compare optical properties of photo annealed solution based thin films with the optical properties of thermally deposited As2S3 thin film annealed at 150°C for one hour. Illumination removes the excess amount of solvent which results in high refractive index, lower absorption coefficient and optical band gap ranging from 2.32 eV to 2.27eV.

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Ishino, Yuichi, and Hatsuo Ishida. "Grazing Angle Metal-Overlayer Infrared ATR Spectroscopy." Applied Spectroscopy 42, no. 7 (September 1988): 1296–302. http://dx.doi.org/10.1366/0003702884429959.

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The most sensitive reflection spectroscopic technique has been developed for studying the structure of thin films between a semiconductor and a metallic film. In this study, a metal-overlayer ATR technique was applied to measure the infrared spectra of interfacial layers. According to optical theory, this technique requires a high angle of incidence near the grazing angle in order to obtain optimum sensitivity. On the basis of the theoretical prediction, an optimized prism was designed. Our prism/thin film/ metal configuration yields an S/N ratio 5 times better than that achieved by the conventional reflection-absorption spectroscopy. This enhancement is not due to the so-called metal island effect, but is due instead to the high refractive index of the semiconductor prism.

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Khemasiri, Narathon, Chanunthorn Chananonnawathorn, Mati Horprathum, Yossawat Rayanasukha, Darinee Phromyothin, Win Bunjongpru, Supanit Porntheeraphat, and Jiti Nukeaw. "Effect of Operated Pressure on Anticorrosive Behavior of Ta₂O₅ Thin Film Grown by D.C. Reactive Magnetron Sputtering System." Advanced Materials Research 802 (September 2013): 242–46. http://dx.doi.org/10.4028/www.scientific.net/amr.802.242.

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Tantalum oxide (Ta2O5) thin films, 100 nm thick were deposited by D.C. reactive magnetron sputtering system at different operated pressure on unheated p-type silicon (100) wafer and 304 stainless substrates. Their crystalline structure, film surface morphology and optical properties, as well as anticorrosive behavior, were investigated. The structure and morphology of films were characterized by grazing-incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The optical properties were determined by spectroscopic ellipsometry (SE). The corrosion performances of the films were investigated through potentiostat and immersion tests in 1 M NaCl solutions. The results showed that as-deposited Ta2O5 thin films were amorphous. The refractive index varied from 2.06 to 2.17 (at 550 nm) with increasing operated pressure. The corrosion rate of Ta2O5 thin film improves as the operated pressure decreases. The Ta2O5 thin films deposited at 3 mTorr operated pressure could be exhibited high performance anticorrosive behavior.

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48

Hammad, Abdel-wahab, Vattamkandathil, and Ansari. "Growth and Correlation of the Physical and Structural Properties of Hexagonal Nanocrystalline Nickel Oxide Thin Films with Film Thickness." Coatings 9, no. 10 (September 26, 2019): 615. http://dx.doi.org/10.3390/coatings9100615.

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This study investigated nonstoichiometric nickel oxide thin films prepared via the DC-sputtering technique at different film thicknesses. The prepared films were characterized by a surface profiler for thickness measurement, X-ray diffraction (XRD) for film nature, atomic force microscopy (AFM) for film morphology and roughness, UV-visible-near infrared (UV-vis.-NIR) spectroscopy for optical transmittance spectra of the films, and the photoluminescence (PL) spectra of the prepared films were obtained. The measured film thickness increased from 150 to 503 nm as the deposition time increased. XRD detected the trigonal crystal system of NiO0.96. The crystallite sizes were mainly grown through (101) and (110) characteristic planes. NiO0.96 films have a spherical particle shape and their sizes decreases as the film thickness increased. The optical band gap values decrease from 3.817 to 3.663 eV when the film thickness increases. The refractive index was estimated from the Moss relation, while the high-frequency dielectric constant and the static dielectric constant were deduced from the empirical Adachi formula. The photoluminescence behavior of the studied films confirmed the photogeneration of an electron-hole in nickel and oxygen vacancies. Hence, this study confirms the presence of nickel oxide lattice in the hexagonal structure containing the defects originated from the nickel vacancies or the excess of oxygen.

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Cui, Zhichao, Haigang Hou, Shahid Hussain, Guiwu Liu, and Guanjun Qiao. "Study on Innovative Flexible Design Method for Thin Film Narrow Band-Pass Filters." Journal of Nanoelectronics and Optoelectronics 17, no. 1 (January 1, 2022): 112–20. http://dx.doi.org/10.1166/jno.2022.3176.

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The thin film narrow band-pass filters are widely used in precision optical systems such as gas detection, fiber optic communication and optical analysis instruments due to their unique optical characteristics. However, as the applications become more widespread, the problems of regulating the half bandwidth and cut-off bandwidth of the thin film narrow band-pass filters based on the Fabry-Perot (F-P) principle are becoming more apparent. In this work, we took the thin film narrow band-pass filter with a center wavelength of 450 nm as the design target, and comprehensively optimized the film system based on standard F-P principle to obtain the film systems with different half bandwidths and their systematic adjustment methods. The half bandwidth can be adjusted effectively by using the conventional half bandwidth control methods such as increasing the interference orders and the number of mirror layers or the cavities, but it is quite difficult to accurately obtain the filters with various half bandwidths since the adjustment range is too large. Based on the principle of equivalent refractive index, the optical thicknesses of the high and low refractive index film layers of the mirror layers were modified in an unconventional way, and thus the half bandwidth can be flexibly adjusted. Moreover, the standard F-P narrow band-pass filter film system was also modified by the principle of induced transmission film system to achieve a significant broadening of the cut-off bandwidth.

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Štrbac, D. D., G. R. Strbac, G. Stojanovic, S. R. Lukic, and D. D. Petrovic. "Modification of some Optical and Mechanical Properties of Amorphous As-S-Se Thin Films by Copper Introduction." Advanced Materials Research 856 (December 2013): 267–71. http://dx.doi.org/10.4028/www.scientific.net/amr.856.267.

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Abstract. In this research experimental investigation of the influence of copper introduction on some relevant parameters in As-S-Se amorphous thin films is performed. Copper is introduced into As2(S0.5Se0.5)3amorphous thin film in concentration of 3 at.%. Samples of As2(S0.5Se0.5)3and Cu3(As2(S0.5Se0.5)3)97amorphous thin films are prepared by the vacuum thermal evaporation technique from previously synthesized bulk samples. Envelope method is applied for the determination of the optical constants, using the transmission and reflection spectra. The dispersion of the refractive index is discussed in terms of the single oscillator model proposed by Wemple–DiDomenico. Values of absorption coefficients in the high absorption region are discussed according to Tauc's law.Instrumented indentation testing is performed, using the Berkovich geometry indenter, for obtaining the value of nano-hardness.All the determined parameters have shown the increase with introduction of copper into amorphous thin film.

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Journal articles on the topic 'High refractive thin film'

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