Academic literature on the topic 'High refractive thin film'

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Journal articles on the topic "High refractive thin film"

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Zhang, Z. M., B. I. Choi, T. A. Le, M. I. Flik, M. P. Siegal, and J. M. Phillips. "Infrared Refractive Index of Thin YBa2Cu307 Superconducting Films." Journal of Heat Transfer 114, no. 3 (August 1, 1992): 644–52. http://dx.doi.org/10.1115/1.2911329.

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This work investigates whether thin-film optics with a constant refractive index can be applied to high-Tc superconducting thin films. The reflectance and transmittance of YBa2Cu3O7 films on LaAlO3 substrates are measured using a Fourier-transform infrared spectrometer at wavelengths from 1 to 100 μm at room temperature. The reflectance of these superconducting films at 10 K in the wavelength region from 2.5 to 25 μm is measured using a cryogenic reflectance accessory. The film thickness varies from 10 to 200 nm. By modeling the frequency-dependent complex conductivity in the normal and superconducting states and applying electromagnetic-wave theory, the complex refractive index of YBa2Cu3O7 films is obtained with a fitting technique. It is found that a thickness-independent refractive index can be applied even to a 25 nm film, and average values of the spectral refractive index for film thicknesses between 25 and 200 nm are recommended for engineering applications.
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BRIDGES, A. S., R. GREEF, N. B. H. JONATHAN, A. MORRIS, and G. J. PARKER. "ELLIPSOMETRIC STUDIES OF VERY LOW PRESSURE THERMAL CVD GROWN SILICON NITRIDE THIN FILMS USING HYDRAZOIC ACID AND DICHLOROSILANE." Surface Review and Letters 01, no. 04 (December 1994): 573–76. http://dx.doi.org/10.1142/s0218625x94000692.

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High quality silicon nitride thin films have been grown using dichlorosilane and hydrazoic acid (ratio 1:5) at a total ambient growth pressure of 1×10–4 Torr. Sequential growth studies of successive CVD nitride films over the 974-1068 K temperature range revealed an activation energy of 84 kJmol –1. Film thicknesses and refractive indices were obtained using in situ real-time ellipsometry, and the majority of the grown films displayed a refractive index of 2.0. Ellipsometric data for the growth of an 8 Å thermal-nitride film with a refractive index of 2.0 are also given.
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Weng, L., and S. N. B. Hodgson. "Multicomponent tellurite thin film materials with high refractive index." Optical Materials 19, no. 3 (May 2002): 313–17. http://dx.doi.org/10.1016/s0925-3467(01)00228-2.

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Dhanasekaran, V., T. Mahalingam, S. Rajendran, Jin Koo Rhee, and D. Eapen. "Electroplated CuO Thin Films from High Alkaline Solutions." Journal of New Materials for Electrochemical Systems 15, no. 1 (December 6, 2011): 49–55. http://dx.doi.org/10.14447/jnmes.v15i1.88.

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CuO thin films were coated on ITO substrates by an electrodeposition route through potentiostatic mode. The electrodeposited CuO thin films were characterized and the role of copper sulphate concentration on the structural, morphological and optical properties of the CuO films was studied. Film thickness was measured by a stylus profilometer and found to be in the range between 800 and 1400 nm. The structural characteristics studies were carried out using X-ray diffraction and found that the films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. The estimated microstructural parameters revealed that the crystallite size increases whereas the number of crystallites per unit area decreases with increasing film thickness. SEM studies show that the grain sizes of CuO thin films vary between 100 and 150 nm and also morphologies revealed that the electrodeposited CuO exhibits uniformity in size and shape. The surface roughness is estimated 15 nm of the CuO film were studied by atomic force microscopy. Optical properties of the films were analyzed from absorption and transmittance studies. The optical band gap energy was determined to be 1.5 eV from absorption coefficient. The variation of refractive index (n), extinction coefficient (k), with wavelength was studied and the results are discussed.
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Al-Bataineh, Qais M., Mahmoud Telfah, Ahmad A. Ahmad, Ahmad M. Alsaad, Issam A. Qattan, Hakim Baaziz, Zoulikha Charifi, and Ahmad Telfah. "Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films." Photonics 7, no. 4 (November 18, 2020): 112. http://dx.doi.org/10.3390/photonics7040112.

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We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.
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Saekow, B., S. Porntheeraphat, Sakon Rahong, S. Jaruvanawat, and J. Nukeaw. "High Refractive Index Dielectric Prepared by Electron Beam Evaporation for Photonic Crystal Optical Biosensor Application." Advanced Materials Research 93-94 (January 2010): 545–48. http://dx.doi.org/10.4028/www.scientific.net/amr.93-94.545.

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The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.
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Wang, Sheng Zhao, Dan Zhang, Ming Ji Shi, Ying Peng Yin, Lan Li Chen, Peng Hui Luo, Yuan Xu, and Xin Feng Guo. "Sol-Gel Derived ZrO2-PVP Coatings with High Laser-Induced Damage Threshold." Solid State Phenomena 181-182 (November 2011): 370–73. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.370.

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ZrO2 and ZrO2-PVP sol was obtained by hydrothermal synthesis. And the thin films were prepared with spin coating method. ZrO2 thin films were characterized or examined by many kinds of instruments. Fourier-transform infrared spectroscopy was employed and some infrared absorption peaks weakened when the heating temperature increased. And 1-on-1 laser-induced damage threshold tests on ZrO2 films were carried out. Refractive index and thickness of the ZrO2-PVP films were measured by means of automatic scanning spectroscopic ellipsometer and the refractive index of ZrO2 -PVP film changed with the addition of PVP content.
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Cheng, Ching Hsuang, Wan Yu Wu, and Jyh Ming Ting. "Nanoscaled Multilayer Thin Films Based on GZO." Journal of Nano Research 2 (August 2008): 61–67. http://dx.doi.org/10.4028/www.scientific.net/jnanor.2.61.

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Nanoscaled gallium-doped ZnO (GZO) thin films, bi-layer Pt/GZO thin films, and tri-layer GZO/Pt/GZO thin films were prepared and their characteristics were investigated. These films were deposited on glass substrates using either rf or dc magnetron sputter deposition. The deposition time and the target-to-substrate distance were varied to obtain different total film thicknesses and layer thicknesses. Effects of total film and layer thicknesses on the optical properties and the electrical properties were studied. Theoretical calculations were performed to discuss effect of the thickness on the optical transmittance of the GZO film. As-deposited GZO films show high electrical resistivity, which was greatly reduced by 2 to 3 orders of magnitude due to the introduction of a surface layer of Pt film. However, the optical transmittance was also reduced. This was improved by using an addition anti-refractive GZO surface layer on the Pt/GZO. A GZO/Pt/GZO film exhibiting visible light transmittance greater than 75% and electrical resistivity in the order of 10-4 ohm-cm was obtained.
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ATUCHIN, V. V., V. SH ALIEV, B. M. AYUPOV, and I. V. KOROLKOV. "DECREASED REFRACTIVE INDEX OF NANOCRYSTALLINE ZIRCONIUM OXIDE THIN FILMS." International Journal of Modern Physics B 26, no. 02 (January 20, 2012): 1250012. http://dx.doi.org/10.1142/s0217979211102101.

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Amorphous zirconium oxide (a- ZrO 2) thin films were prepared onto fuzzed quartz substrates by ion beam sputtering deposition (IBSD) method in ( Ar + O 2) gas mixture. Optical parameters of the films were evaluated by laser ellipsometry (λ = 632.8 nm ) and optical transmission measurements. Structural parameters were studied by XRD measurements. Variation of refractive index and film thickness have been defined as a function of time of high-temperature annealing at T = 900° C . Formation of monoclinic zirconium oxide (m- ZrO 2) nanocrystals with diameter of ~60 nm embedded into a- ZrO 2 matrix has been found by XRD analysis after long-time annealing.
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Koo, Junmo, Jae Hyeok Jang, and Byeong-Soo Bae. "Preparation and characteristics of seeded epitaxial (Sr,Ba)Nb2O6 optical waveguide thin films using sol-gel method." Journal of Materials Research 16, no. 2 (February 2001): 430–36. http://dx.doi.org/10.1557/jmr.2001.0065.

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Highly c-axis-oriented (Sr,Ba)Nb2O6 (SBN) films were grown on a seeded MgO(100) substrate via sol-gel method. The substrate was preseeded with epitaxial islands of SBN made by breaking up a continuous film into single-crystal islands by pores. Since the number of epitaxial nuclei was increased at the interface between the film and the substrate, the film on a seeded substrate had better highly orientation than that on unseeded substrate. The film having low Sr content exhibited better epitaxial growth because of the distorted unit-cell network and the change of lattice parameters of SBN thin film. For obtaining excellent optical properties, SBN:75 film was prepared on MgO substrate with SBN:25 composition seed layer. Because of low birefringence of refractive indices in the film having high Sr content, the optical scattering loss by the anisotropy of refractive indices was suppressed.
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Dissertations / Theses on the topic "High refractive thin film"

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Kang, Lee. "The application of thin film planar waveguides as a refractive index detector for microscale high performance liquid chromatography." Diss., Virginia Tech, 1991. http://hdl.handle.net/10919/39813.

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Thin film planar waveguides were originally introduced in microwave engineering. The spectroscopist began to use such waveguides as tools to solve chemical characterization problems since Harrick and Fahrenfort introduced the Attenuated Total'Reflection (ATR) in the early 1960's. Today, planar waveguides are playing an important and ever-increasing role in modem chemistry. In this thesis, a novel design for a refractometer involving the application of a thin film planar waveguide and coupling prism was demonstrated. This device shows the feasibility of refractive index measurements in a flowing stream. Therefore, an online detector for High Performance Liquid Chromatography (HPLC) was chosen as the vehicle to test out the concepts. The research works were devoted to studies of waveguide properties and flow dynamics in a chromatographic situation. It was found that microscale detection is possible. The sensitivity can be enhanced by using the highest propagation mode as the probe, and by selecting a proper refractive index liquid as the solvent carrier. A description of the investigation and the various factors involved in designing and optimizing a planar waveguide for refractive index detection is included. The results provide guidelines for the device as a realistic analytical detector.
Ph. D.
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Lax, S. E. "Refractive index profiles produced by ion implantation in insulators." Thesis, University of Sussex, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.377075.

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Keeling, David. "Novel thin film optical modulator/tunable retarder." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/29595.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.
Committee Chair: A. Rahman Zaghloul ; Committee Members: W. Russell Callen and Doug Yoder. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Chen, Y. "Novel polysilicon high voltage thin film transistors." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597542.

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Research in High Voltage Thin Film Transistors (HVTFTs) has been driven by the need for devices with reduced on-state resistance and high blocking capability to improve the performance of large area electronic applications. Conventional HVTFTs give unsatisfactory performance because of the high on-state resistance, low breakdown voltage (Offset Drain HVTFT), high possibility of oxide failure and requirement for extra external bias line (Metal Field Plate HVTFT) etc. This thesis presents a novel high voltage thin film transistor structure - Semi-Insulating Field Plate HVTFT (SIFP HVTFT) which utilises a semi-insulating layer as the field plate to modify the conductivity in the offset region. The new structure has demonstrated and enhanced on-state performance relative to conventional offset drain device and a much improved blocking capability compared with all existing high voltage thin film transistor structures. Unlike conventional offset drain TFTs, during the "on-state", the channel formed under the gate can be extended into the offset region by the potential on the semi-insulating field plate which is controlled by the bias on the gate and the drain. Equivalent circuit models for the SIFP HVTFT have been developed for the device analysis. New concepts such as "extended channel" have been proposed for the first time to illustrate the device physics underlying the improvement in performance of the new device. The superior blocking capability is attributed to a very small leakage current flowing through the semi-insulating field plate which increases the radius of potential curvature near the drain. This leakage current, however, does not significantly contribute to the main current flowing through the device. It is concluded that the SIFP HVTFT presents a new concept to the high voltage thin film transistor family and has clearly shown many advantages over conventional HVTFTs.
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McDonald, Peter Hughes 1965. "High temperature superconductor thin film optical detectors." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277167.

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Since the recent discovery of a new class of high critical temperature superconductors (HTS), much interest has been shown in their potential use as optical detectors. The purpose of this research was to test thin film samples of the HTS Y1Ba2Cu3O7-delta as detectors and investigate any response to optical radiation. A laboratory test facility was designed and built for this purpose. The experimental results exhibit a variety of optical responses that are dependent upon the physical characteristics of each HTS thin film. Polycrystalline films exhibited a different detection mode than did epitaxial films. This research demonstrates that HTS thin films are viable optical detectors and have the potential to become competitive high-performance detectors as the new technology continues to emerge.
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Vedula, Ramakrishna. "Materials for High Temperature Thin Film Thermocouple Applications." Thesis, Virginia Tech, 1998. http://hdl.handle.net/10919/46493.

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The thermocouple systems used for the measurement of surface temperature in high temperature applications such as advanced aerospace propulsion systems and diesel engine systems are expected to perform in rapidly fluctuating and extremely high heat fluxes corresponding to high temperatures (in excess of 1400 K) and high speed flows. Traditionally, Pt/Pt-Rh based thin film thermocouples have been used for surface temperature measurements. However, recent studies indicated several problems associated with these thermocouples at temperatures exceeding 1000 K, some of which include poor adhesion to the substrate, rhodium oxidation and reaction with the substrate at high temperatures. Therefore, there is an impending demand for thermoelectric materials that can withstand severe environments in terms of temperature and heat fluxes. In this study, thin films of titanium carbide and tantalum carbide as well as two families of conducting perovskite oxides viz., cobaltites and manganates (La(1-x)SrxCoO3, M(1-x)Cax MnO3 where, M=La,Y) were investigated for high temperature thin film thermocouple applications as alternate candidate materials. Thin films of the carbides were deposited by r.f. sputtering while the oxide thin films were deposited using pulsed laser ablation. Sapphire (1102) was used as substrate for all the thin film depositions. All the thin films were characterized for high temperature stability in terms of phase, microstructure and chemical composition using x-ray diffraction, atomic force microscopy and electron spectroscopy for chemical analysis respectively. Electrical conductivity and seebeck coefficients were measured in-situ using a custom made device. It was observed that TiC/TaC thin film thermocouples were stable up to 1373 K in vacuum and yield high and fairly stable thermocouple output. The conducting oxides were tested in air and were found to be stable up to at least 1273 K. The manganates were stable up to 1373 K. It was observed that all the oxides studied crystallize in a single phase perovskite structure. This phase is stable up to annealing temperatures of 1373 K. The predominant electrical conduction mechanism was found to be small polaron hopping. Stable and fairly high electrical conductivities as well as seebeck coefficients accompanied with phase, structure, composition and microstructure stability indicate that these materials hold excellent promise for high temperature thin film thermocouple applications.
Master of Science
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Karadeniz, Erol. "Cylindrical high index contrast thin film dielectric optical waveguide." Related electronic resource: Current Research at SU : database of SU dissertations, recent titles available full text, 2005. http://wwwlib.umi.com/cr/syr/main.

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Modi, Mitul B. "Fracture in stress engineered, high density, thin film interconnects." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/16336.

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Recio, Gustavo. "High speed switching in magnetic recording thin-film heads." Thesis, University of Exeter, 2008. http://hdl.handle.net/10036/41479.

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There has always been an increasing demand for high density data storage. However, the increased areal storage densities of hard disk drives require a level of miniturisation of the recording heads where the micromagnetic details and switching mechanisms can no longer be ignored. Furthermore, theoretical and numerical studies on thin-film recording heads tend to separate the micromagnetics from the electromagnetic aspects of the head during switching and hence ignore the lossy nature of head materials. This project was aimed to develop a numerical simulation approach that simultaneously incorporates the fundamental micromagnetic and electromagnetic details of magnetic materials to study the fast switching process in soft magnetic materials in general, and in thin-film inductive writers in particular. The project also was aimed at establishing an impedance measurement system to characterise losses in magnetic recording heads, and to allow comparison with the simulations. This project successfully met all its original objectives. A numerical technique to simulate the dynamic behaviour of magnetic materials and devices has been developed, and applied to study the switching process in thin-film recording heads. Two-dimensional simulations of complete commercial head structures including the coils and pole regions were carried out and parameters such as gap field rise times, gap field distributions, and core inductances, which are important for head designers, were predicted. Moreover, the role of eddy currents delaying the magnetisation switching was elucidated. Furthermore, it was found that the gradient of the recording fields were sharper near the conrner regions of the poles when considering magnetic details. A high precision, high bandwidth impedance measurement system was established to characterise losses in magnetic heads. Fittings of measured core inductances to a proposed equivalent circuit model of the core’s relaxation processes revealed the switching times of heads (of the order 0.1 to 1.0ns).
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Mastio, Emmanuel Antoine. "Materials engineering for high efficiency thin film electroluminescent devices." Thesis, Nottingham Trent University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302407.

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Books on the topic "High refractive thin film"

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Powell, Jeffrey Richard. Microwave surface impedance of thin film high temperature superconductors. Birmingham: University of Birmingham, 1996.

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H, Burness Arnold, ed. Superconducting thin films: New research. New York: Nova Science Publishers, 2008.

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Linke, Felix. Development of ellipsometric microscopy as a quantitative high-resolution technique for the investigation of thin films at glass-water and silicon-air interfaces. Jülich: Forschungszentrum Jülich, 2004.

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1946-, Margaritondo Giorgio, Joynt Robert, Onellion Marshall, American Vacuum Society, and Topical Conference on High TC Superconducting Thin Films, Devices, and Applications (1988 : Atlanta, Ga.), eds. High Tc̳ superconducting thin films, devices, and applications, Atlanta, GA, 1988. New York, NY: American Institute of Physics, 1989.

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European, Conference on Applied Superconductivity (6th 2003 Sorrento Italy). Applied superconductivity 2003: Proceedings of the sixth European Conference on Applied Superconductivity, Sorrento, Italy, 14-18 September 2003. Bristol: Institute of Physics Pub., 2004.

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Outlaw, R. A. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. Washington: NASA, 1986.

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S, Kwok Hoi, Kao Yi-Han 1931-, and Shaw David T, eds. Superconductivity and applications. New York: Plenum Press, 1989.

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European Conference on Applied Superconductivity (6th : 2003 : Sorrento, Italy). Applied superconductivity 2003: Proceedings of the sixth European Conference on Applied Superconductivity .. Great Britain: Inst Physics Publ, US, 2004.

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Satellite, Symposium 1. on High Performance Ceramic Films and Coatings (1990 Montecatini Terme Italy). High performance ceramic films and coatings: Proceedings of the Satellite Symposium 1 on High Performance Ceramic Films and Coatings of the 7th International Meeting on Modern Ceramics Technologies (7th CIMTEC-World Ceramics Congress), Montecatini Terme, Italy, 27-30 June, 1990. Amsterdam: Elsevier, 1991.

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IEEE SOS/SOI Technology Conference. (1989 Stateline, Nev.). 1989 IEEE SOS/SOI Technology Conference, October 3-5, 1989, High Sierra Hotel, Stateline, Nevada: Proceedings. [New York]: IEEE, 1989.

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Book chapters on the topic "High refractive thin film"

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Lourenço, Paulo, Manuela Vieira, and Alessandro Fantoni. "Thin Film Refractive Index and Thickness." In IFIP Advances in Information and Communication Technology, 179–88. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-45124-0_17.

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Mwema, Fredrick Madaraka, Tien-Chien Jen, and Lin Zhu. "High Entropy Alloy Thin Films." In Thin Film Coatings, 257–70. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003202615-13.

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Gradmann, Ulrich. "Ultra-Thin Film Magnetism." In High Density Digital Recording, 315–54. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1636-7_11.

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Clarke, John, Du Quan, M. J. Ferrari, J. J. Kingston, A. H. Miklich, and F. C. Wellstood. "High-Tc Thin-Film Microelectronics." In Advances in Superconductivity III, 3–10. Tokyo: Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_1.

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Itozaki, Hideo. "Thin Film of High-Tc Superconductor." In Advances in Superconductivity II, 749–54. Tokyo: Springer Japan, 1990. http://dx.doi.org/10.1007/978-4-431-68117-5_160.

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Ihara, H., K. Senzaki, Y. Kimura, M. Hirabayashi, N. Terada, and H. Kezuka. "High-Tc MoN Thin Film Synthesis." In Advances in Cryogenic Engineering Materials, 603–16. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-9871-4_72.

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Taudt, Christopher. "Thin-film Characterization." In Development and Characterization of a Dispersion-Encoded Method for Low-Coherence Interferometry, 123–30. Wiesbaden: Springer Fachmedien Wiesbaden, 2021. http://dx.doi.org/10.1007/978-3-658-35926-3_5.

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AbstractThe third intended application for the proposed dispersion-encoded low-coherence interferometry is the evaluation of thin-film characteristics on substrate materials. Due to the usage of thin-film technologies in high-volume production in e.g. the photovoltaics and semiconductor industry, process monitoring becomes relevant in order to ensure functional parameters such as solar cell efficiency, [289]. In this context, film thickness as well as film homogeneity over large areas are important criteria for quality assurance.
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Lee, Jinho, Hongkyu Kang, Hongkyu Kang, Soonil Hong, Soo-Young Jang, Jong-Hoon Lee, Sooncheol Kwon, et al. "Interface Engineering for High-Performance Printable Solar Cells." In Photoenergy and Thin Film Materials, 193–252. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2019. http://dx.doi.org/10.1002/9781119580546.ch5.

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Cantoni, C., and A. Goyal. "High-T c Superconducting Thin- and Thick-Film–Based Coated Conductors for Energy Applications." In Thin Film Metal-Oxides, 233–53. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_7.

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Reber, Stefan, Thomas Kieliba, and Sandra Bau. "Crystalline Silicon Thin Film Solar Cells on Foreign Substrates by High Temperature Deposition and Recrystallization." In Thin Film Solar Cells, 39–95. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch2.

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Conference papers on the topic "High refractive thin film"

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Tang, Yongxing, Congshan Zhu, Weiqing Zhang, and Zhonghong Jiang. "New route for sol-gel high-refractive-index ZrO2 coating." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300727.

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Cabrini, Stefano, Carlos Pina-Hernandez, Alexander Koshelev, Keiko Munechika, Michela Sainato, and Scott D. Dhuey. "High-refractive index materials for fabrication of photonic nanostructures (Conference Presentation)." In Nanostructured Thin Films XI, edited by Tom G. Mackay and Akhlesh Lakhtakia. SPIE, 2018. http://dx.doi.org/10.1117/12.2322890.

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Burnat, Dariusz, Olga Kochanowska, Petr Sezemsky, Vitezslav Stranak, Marcin Koba, and Mateusz Śmietana. "Thin–Film–Modified Optical Fiber Fabry–Perot Interferometer for Refractive Index Sensing." In Optical Fiber Sensors. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/ofs.2022.th4.51.

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A sensor formed on the fiber tip by deposition of two films showing high-refractive-index contrast results in well-defined reflection minimum shifting in wavelength independently as a response to refractive index change and film growth.
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Paulasaari, Jyri, Juha Rantala, Jukka Perento, Janne Kylma, and Mikko Poutanen. "Ultra-high refractive index difference optical materials-integration for optical thin-film structures." In Optical Components and Materials XVIII, edited by Michel J. Digonnet and Shibin Jiang. SPIE, 2021. http://dx.doi.org/10.1117/12.2578747.

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Gutruf, Philipp, Eike Zeller, Sumeet Walia, Shruti Nirantar, Sharath Sriram, and Madhu Bhaskaran. "Mechanically Tunable Thin Film High Refractive Index Contrast TiO2–Gratings in Elastomeric Matrix." In Frontiers in Optics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/fio.2015.jtu4a.23.

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Perner, Lukas W., Georg Winkler, Gar-Wing Truong, David Follman, Jakob Fellinger, Maximilian Prinz, Stephan Puchegger, Garrett D. Cole, and Oliver H. Heckl. "High-Accuracy Measurement of Mid-IR Refractive Indices of GaAs/AlGaAs in Thin-Film Multilayers." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/oic.2022.wa.5.

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We report a method to measure the refractive index of two or more materials in as-deposited thin-film structures by analysis of FTIR transmittance spectra and extraction of layer thicknesses via SEM, yielding excellent results for a GaAs/AlGaAs DBR.
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Carvalho, William O. F., Edwin Moncada-Villa, Osvaldo N. Oliveira, and Jorge Ricardo Mejía-Salazar. "Extraordinary enhancement of the transverse magneto-optical Kerr effect with high-refractive-index nanostructures." In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVIII, edited by Wounjhang Park, André-Jean Attias, and Balaji Panchapakesan. SPIE, 2021. http://dx.doi.org/10.1117/12.2593929.

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baldovino-pantaleon, oscar, Deborah Martinez-Camacho, Rene Dominguez-Cruz, and Daniel A. May-Arrioja. "Refractive index sensing in high-refractive-index liquids based on tapered fiber optic coated with silicon nitride thin film." In Latin America Optics and Photonics Conference. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/laop.2016.ltu4a.39.

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Gorin, Arnaud, Robert Copperwhite, Salem Elmaghrum, Colette McDonagh, and Mohamed Oubaha. "Hybrid zirconium sol-gel thin films with high refractive index." In International Symposium on Photoelectronic Detection and Imaging 2011, edited by Yuelin Wang, Huikai Xie, and Yufeng Jin. SPIE, 2011. http://dx.doi.org/10.1117/12.900813.

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Hu, H., R. Ricken, and W. Sohler. "High refractive index contrast ridge waveguides in LiNbO3 thin films." In 11th European Quantum Electronics Conference (CLEO/EQEC). IEEE, 2009. http://dx.doi.org/10.1109/cleoe-eqec.2009.5196502.

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Reports on the topic "High refractive thin film"

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Hong, Y. K., Y. Qiang, D. E. Aston, C. A. Berven, J. L. Young, and G. W. Donohoe. Development of High Resistive and High Magnetization Soft Thin Film and Fabrication of Thin Film Inductors. Fort Belvoir, VA: Defense Technical Information Center, November 2004. http://dx.doi.org/10.21236/ada433358.

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Kreider, Kenneth G. Thin film thermocouples for high temperature measurement. Gaithersburg, MD: National Institute of Standards and Technology, 1989. http://dx.doi.org/10.6028/nist.ir.89-4087.

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Buhrman, R. A. High Resolution Studies of Thin Film Interfaces. Fort Belvoir, VA: Defense Technical Information Center, February 1998. http://dx.doi.org/10.21236/ada337921.

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Buhrman, R. A. High Resolution Studies of Thin Film Interfaces. Fort Belvoir, VA: Defense Technical Information Center, March 1998. http://dx.doi.org/10.21236/ada338838.

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Wu, X. D., A. Finokoglu, M. Hawley, Q. Jia, T. Mitchell, F. Mueller, D. Reagor, and J. Tesmer. High-temperature superconducting thin-film-based electronic devices. Office of Scientific and Technical Information (OSTI), September 1996. http://dx.doi.org/10.2172/378956.

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Wang, Evelyn N. Nanoengineered Surfaces for High Flux Thin Film Evaporation. Fort Belvoir, VA: Defense Technical Information Center, July 2013. http://dx.doi.org/10.21236/ada583176.

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Kapur, V., B. Basol, and R. Kullberg. High-efficiency copper ternary thin film solar cells. Office of Scientific and Technical Information (OSTI), September 1989. http://dx.doi.org/10.2172/5206355.

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Gale, R. Manufacturing of ultra-high efficiency thin-film concentrator cells. Office of Scientific and Technical Information (OSTI), February 1992. http://dx.doi.org/10.2172/5860740.

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Chow, R., G. E. Loomis, and P. Biltoft. Determining the refractive index of a {lambda}/4 thin film on a thick substrate from a transmittance measurement. Office of Scientific and Technical Information (OSTI), June 1993. http://dx.doi.org/10.2172/10181163.

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Trolier-McKinstry, Susan, and Thomas R. Shrout. Crystal Growth and Thin Film Deposition of High Performance Piezoelectrics. Fort Belvoir, VA: Defense Technical Information Center, January 2001. http://dx.doi.org/10.21236/ada428818.

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