Journal articles: 'High frequency power switch'

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Santos Almeida, Pedro, Guilherme Márcio Soares, and Henrique Antônio Carvalho Braga. "A novel single-switch high power factor LED driver topology with high-frequency PWM dimming capability." Eletrônica de Potência 18, no. 1 (February 1, 2013): 855–63. http://dx.doi.org/10.18618/rep.2013.1.855863.

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Jiang, Qiang. "The Design of 25KV High-Frequency High-Voltage Power Supply." Advanced Materials Research 912-914 (April 2014): 927–30. http://dx.doi.org/10.4028/www.scientific.net/amr.912-914.927.

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In this paper, a HV and HF switch power supply was designed, which was controlled through a single chip microcomputer, also the MOSFET was used as the switch power tube. The PWM (pulse width modulation) technique and half-bridge inverter topology have been used to invert AC into the DC that can be adjust from 0V~25KV and the operating frequency is 35KHz, Through the simulation with the Saber software and practical use, the feasibility of the scheme and the correctness of the design have been verified.

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Kao, Hsuan-Ling. "On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology." Electronics 10, no. 23 (November 25, 2021): 2928. http://dx.doi.org/10.3390/electronics10232928.

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This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.

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Liu, Bai Fen, and Ying Gao. "Design of a High Power Programmable Intelligent Switch." Applied Mechanics and Materials 389 (August 2013): 421–24. http://dx.doi.org/10.4028/www.scientific.net/amm.389.421.

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Based on the need to develop and test the products, a single phase DSPbased programmable AC power supply is designed. The power supply is capable of providing a stable AC voltage with adjustable amplitude and frequency over a wide range. Moreover, it can generate various high quality and low frequency arbitrary waveforms. Because of the advantages above, it will have great value in practice and a promising future in testing field. The main circuit of the power supply is to use rectifier and filter to make 220V AC voltage become steady DC voltage firstly. Then the inverter and the LC LPF are employed to produce the AC voltage which is required in the test system. The key part of the inverter is phase shift full bridge.

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Lanter, William C., Hiroyuki Kosai, Tyler Bixel, B. Allen Tolson, Jeffery Stricker, James Scofield, Navjot Brar, and Biswajit Ray. "Capacitor Characterization Study for a High Power, High Frequency Converter Application." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000174–81. http://dx.doi.org/10.4071/hitec-jstricker-wa11.

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Recent advances in SiC power devices and high temperature magnetic and insulation materials has led to an increase in activity to develop compact, high switch rate power system components that can operate at temperatures in excess of 200°C. These efforts have highlighted the need to develop capacitor technology for high power, high frequency power filter applications, which can experience cycling over a wide range of temperature (−55 °C to 250 °C). A modeling and simulation capability was used to investigate device architecture and electrical performance relationships for a select group of wound and stacked devices, which were then evaluated for use in a power conditioning application. A finite element analysis of the device architectures was used to develop a better understanding of how magnetic fields and thermal profiles affect the performance of the capacitors in maintaining a low ripple voltage at high switch rates (>20 kHz). Both predicted electrical properties and empirical data were utilized as SPICE simulation input parameters to evaluate the performance of the different capacitors in an interleaved DC-DC boost converter model. Of interest is developing a better understanding of how the device architecture and its electrical properties affect its performance as a filtering device in a high power, high frequency application.

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Nan, Qiu, and Fan Yin Hai. "Digital Controlled High Power Mid-Frequency Pulsed Power Supply." Advanced Materials Research 108-111 (May 2010): 1332–37. http://dx.doi.org/10.4028/www.scientific.net/amr.108-111.1332.

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In this article a novel scheme of high power mid-frequency pulse power supply is proposed. The supply is made up of two major stages. First stage is dual interleaved buck chopper stage in order to make the DC bus and output pulse voltage controllable. Second stage is a inverter converting the DC voltage into a series of square AC voltage pulse. IGBT module(300A-1200V) is used as the main switch device for the proposed supply is a high power application. As we know large capacity power IGBT module can hardly work as high as 40Khz[1], so to solve this problem, interleaved control scheme is incorporated. Basic ideas are to share the total switching losses. To combine several converters working under certain sequence is the key point. Final output pulse frequency is 20-40Khz,voltage level is 0-800V, and pulse width is 0-90% changeable. The whole system is concise effective. Experimental results verified the feasibility of abovementioned power supply.

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Wang, Xiao Lei, and Yong Wei Zhang. "A Noise-Optimal Integrator for High-Precision SC Sigma Delta Modulators." Applied Mechanics and Materials 644-650 (September 2014): 3322–28. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3322.

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Based on N-well Chartered 0.35-um CMOS technology, we designed an integrator for a low-power and high-precision sigma-delta modulator, which has a structure of third-order CIFF, one bit quantization. Amplifier designed in this paper use the PMOS folded cascade differential structure. All switches of the switch capacitance integrator are CMOS switch. The structure-improved integrator can be used to preliminarily filter the noise power of the input signal, and reduce the noise into the modulator, combined with bottom plate sampling technology and the right timing sequence. Input sinusoidal signal has frequency of 65.625Hz and amplitude of 0.6V. It’s simulated in cadence spectre with sampling frequency of 76.8kHz and power supply voltage of 3.3V. FFT analysis of the integrator output shows that the noise floor is-94.3dB, which meets the performance requirements of the system.

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Hertel, Jens Christian, Yasser Nour, and Arnold Knott. "Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations." IEEE Journal of Emerging and Selected Topics in Power Electronics 6, no. 2 (June 2018): 526–38. http://dx.doi.org/10.1109/jestpe.2017.2777884.

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Quan, Jian Zhou, Sheng Hua Wu, Peng Ju Cao, and Jian Shi Xu. "A Commutation Strategy for Matrix Sinusoidal Waveform Converter with High-Frequency Link in Electric Power Systems." Advanced Materials Research 676 (March 2013): 222–26. http://dx.doi.org/10.4028/www.scientific.net/amr.676.222.

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To achieve safety commutation of the bidirectional switch in Matrix Sinusoidal waveform converter with high-frequency link, a decoupling time-driven strategy is proposed in this paper. The two gates in each bidirectional switch are driven by different signals, so the voltage surge caused by non-synchronous commutation of two bidirectional switches can be avoided, and both ZVS and ZCS are also achieved. Since the current polarity of load need not to be detected, the circuit is easy in realization. Experiments has been carried out to verify the feasibility of the proposed method.

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Luo, Xiaoxiao, Qian Wang, Mingming Du, Yingkai Long, and Xiping Jiang. "The Development of Solid-state Pulse Generator based on Marx Circuit with Chopping Switch." Journal of Physics: Conference Series 2491, no. 1 (April 1, 2023): 012012. http://dx.doi.org/10.1088/1742-6596/2491/1/012012.

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Abstract A solid-state pulse source is mainly formed by replacing the spark switch in a traditional pulse source with semiconductor switch device. Compared with conventional gas switch devices such as spark switches, semiconductor switch devices have the advantages of high work repetition frequency, long service life, small size, high efficiency, high reliability, easy control, and active shutdown. However, there are still problems, such as the solid-state switch being easily broken down by high voltage, the rising and falling edges of the pulse being slow, and the loss is enormous. In this paper, a solid-state pulse generator based on Marx with a chopping switch circuit is developed, which effectively solves the above problems. The pulse generator comprises DC power, a switching power circuit, a Marx circuit with a chopping switch, a serial port touch screen, and an optical fiber transmission circuit.

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Alazemi, Abdullah J., Ali Farahbakhsh, and Davoud Zarifi. "A 12–20 GHz Wideband High-Power SP2T Switch Based on Gap Waveguide Technology." Sensors 21, no. 16 (August 10, 2021): 5396. http://dx.doi.org/10.3390/s21165396.

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A novel wideband high-power single-pole two-throw (SP2T) switch based on gap waveguide technology is presented in this article. The proposed switch has a SP2T structure and consists of three standard WR62 waveguide ports. Due to the advantage of gap waveguide technology, the switch design structure requires no electrical contact between its different parts, and the leakage of the electromagnetic wave is suppressed. The proposed switch has an air gap between its parts. As a result, the sliding part of the switch can be moved freely to change the switch states. Consequently, a low-precision and low-cost fabrication can be utilized. The simulation and measurement of the proposed switch indicate that a 50% operating frequency bandwidth covering the range of 12–20 GHz can be achieved. The switch input return-loss is better than 15 dB within the frequency bandwidth, whereas the insertion loss and isolation levels of the proposed design are above 0.15 dB and better than 65 dB, respectively.

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Liu, Yan, Ming Li Lu, and Chao Qu. "Optimization Design of High Frequency Transformer for Multiple Outputs Switching Power Supply." Advanced Materials Research 1044-1045 (October 2014): 370–74. http://dx.doi.org/10.4028/www.scientific.net/amr.1044-1045.370.

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With TOP243Y as control chip of multiplexed output flyback switch power supply, has the advantages of small volume, high integration and strong function, and the high-frequency transformer design and calculation large effect on the overall performance of multiple output the switch power supply. Based on the design computation to optimize the parameters of the transformer can be achieved to improve voltage accuracy, reducing the ripple effect. Seen from the experimental data and waveform of the switching power supply regulator, electromagnetic compatibility are good, meet the design requirements.

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Qin, Juan Ying, Cui Fang Liu, and Chang Qing Bi. "The Switch Control of Double-Power Supply System Based on Intelligent Static Switch." Advanced Materials Research 591-593 (November 2012): 1612–16. http://dx.doi.org/10.4028/www.scientific.net/amr.591-593.1612.

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This article introduces the principle of achieving high precision switch control on double-power supply system of electric fence power & inverting power by intelligent static switch with DSP-TMS320LF2407A as the main control chip and its hardware & software characteristics. The most central part of intelligent static switch is to embed an intelligent soft management system and set up a platform to manage other software, which achieve fast data processing and complex Boolean calculation of system. The intelligent static switch can monitor the magnitude, phase and frequency of electric fence power & inverting power in real time according to present parameter, revise the frequency & phase of standby power in-phase signal which is in a warm-waiting state, make sure they are highly precise in double-power supply system, and achieve “seamless” switch.

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Idham alzaidi, Ali, Azli Yahya, Tan Tian Swee, and Norhalimah Idris. "Development of high frequency generator for bipolar electrosurgical unit." International Journal of Engineering & Technology 7, no. 2.29 (May 22, 2018): 20. http://dx.doi.org/10.14419/ijet.v7i2.29.13118.

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Power Electronics is widely used in bioscience and medical instruments such as Electrosurgical Units, MRI and X-ray. An advance development in switch mode power supply leads to a new design topology of DC to DC convertor for Electrosurgical Systems. The new designed system has a capacity to produce high efficient output power with high resonance, this improves the performance of the surgery operation. This paper reports a Buck-Boost topology DC to DC (Flyback) converter with high power switching. The simulation results show an improved performance when compared to the existing system.

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KOROVIN, SERGEI D., IVAN K. KURKAN, SERGEY V. LOGINOV, IGOR V. PEGEL, SERGEI D. POLEVIN, SERGEI N. VOLKOV, and ANDREY A. ZHERLITSYN. "Decimeter-band frequency-tunable sources of high-power microwave pulses." Laser and Particle Beams 21, no. 2 (April 2003): 175–85. http://dx.doi.org/10.1017/s0263034603212052.

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This article describes S-band sources of high-power microwave (HPM) pulses: a resonant backward wave oscillator (BWO) producing ∼5-GW, 100-J pulses, based on the SINUS-7 electron accelerator, and a double-section vircator with a peak power of ∼1 GW and a pulse width of 20–50 ns, powered from either the SINUS-7 accelerator or the MARINA inductive-store pulse driver with a fuse opening switch.

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Han, Bangzhong. "Prospect Analysis of High Frequency Inverter Used in ESP." Electronics Science Technology and Application 2 (December 3, 2015): 4. http://dx.doi.org/10.18686/esta.v2i1.2.

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It has been difficult for the old ESP to meet the new dust emission standards, and the update of the equipment costs a lot of money, therefore, how to reach a higher cost performance becomes the focus of attention. After researches we found that the replacement of the industrial frequency power with the high-frequency inverter of the ESP power can greatly improve the collection efficiency, with a high cost performance and a good prospect of application. The core idea of electrostatic precipitators of high frequency inverter is to transfer three-phase working frequency power into DC power, make use of modernized power electronic technologies and transfer DC power inverter into high frequency AC for control. We can see from this article that electrostatic precipitators of high frequency inverter enjoy the following strengths: (l) Three-phase rectifier transfers three-phase AC power into DC power; the inverter transfers DC voltage into high frequency AC voltage. This method enjoys great flexibility in the control. (2) The output form of high frequency AC voltage square wave in the inverter transfers step-up transformer into high frequency transformer. (3) Compared with the traditional power supply of controllable silicon working frequency phase control electrostatic precipitators, the electrostatic precipitators power supply of high frequency inverter adopts full-controllable power component: IGBT which features swift switch-on/off speed and in case of flashover in the electrostatic precipitators, it is switched off immediately. Research has discovered that high frequency inverter can greatly upgrade the dust collection efficiency, enjoy favorable advancement and very high performance-price ratio and realize broad application prospect.

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Zhu, Yong, and Jitendra Pal. "Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation." Micromachines 12, no. 10 (October 12, 2021): 1237. http://dx.doi.org/10.3390/mi12101237.

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In this paper, we report a novel laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch, which is based on a combination of electrothermal actuation and electrostatic latching hold. The switch takes the advantages of both actuation mechanisms: large actuation force, low actuation voltage, and high reliability of the thermal actuation for initial movement; and low power consumption of the electrostatic actuation for holding the switch in position in ON state. The switch with an initial switch gap of 7 µm has an electrothermal actuation voltage of 7 V and an electrostatic holding voltage of 21 V. The switch achieves superior RF performances: the measured insertion loss is −0.73 dB at 6 GHz, whereas the isolation is −46 dB at 6 GHz. In addition, the switch shows high reliability and power handling capability: the switch can operate up to 10 million cycles without failure with 1 W power applied to its signal line.

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Hejazi, Arash, Reza E. Rad, S. A. Hosseini Asl, Kyung-Duk Choi, Joon-Mo Yoo, Hyungki Huh, Seokkee Kim, Yeonjae Jung, and Kang-Yoon Lee. "A High-Power 3P3T Cross Antenna Switch with Low Harmonic Distortion and Enhanced Isolation Using T-Type Pull-Down Path for Cellular Mobile Devices." Sensors 22, no. 14 (July 21, 2022): 5461. http://dx.doi.org/10.3390/s22145461.

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This paper presents a radio frequency (RF) triple pole triple throw 3P3T cross antenna switch for cellular mobile devices. The negative biasing scheme was applied to improve the power-handling capability and linearity of the switch by increasing the maximum tolerable voltage drop across the drain and source and reverse biasing the parasitic junction diodes. To avoid signal reflection through the antenna in off-state, all the antenna ports were equipped with 50-ohm termination to provide the pull-down path. Considering the simultaneous operation of antenna ports in different switch cases, the presented T-type pull-down path demonstrated improvement of isolation by over 15 dB. Using stacked switches, the 3P3T handled the input power level of over 35 dBm. The chip was manufactured in 65 nm complementary metal oxide semiconductor (CMOS) silicon on insulator (SOI) technology with a die size of 790 × 730 µm. The proposed structure achieved insertion loss, isolation, and voltage standing wave ratio (VSWR) of less than −0.9 dB, −40 dB, and 1.6, respectively, when the input signal was 3.8 GHz. The measured results prove the implemented switch shows the second and third harmonic distortion performances of less than −60 dBm when the input power level and frequency are 25 dBm and 3.8 GHz, respectively.

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He, Hong, Shuai Bao, Hang Li, Da Jian Zhang, and Ming Feng Hou. "Suppression of the Conducted Interference of Switching Power Supply." Key Engineering Materials 474-476 (April 2011): 883–87. http://dx.doi.org/10.4028/www.scientific.net/kem.474-476.883.

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Along with the power electronic technology constantly to high frequency change, miniaturization, direction, switching power supply the electromagnetic compatibility problems appeared more and more important. This paper mainly analyses the switch power electromagnetic interference source and the coupling channels, and with half a bridge type switch power converter for example analyses of switch power supply conducted interference. On the basis of existing circuit model, calculates and analyzes the an active filter, thus for suppression of switch power supply conducted interference provide theoretical basis.

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Zhao, Chen Xu, Xin Guo, Tao Deng, Ling Li, and Ze Wen Liu. "Power Handling Capability Improvement of Metal-Contact RF MEMS Switches by Optimized Array Configuration Design of Contact Dimples." Key Engineering Materials 609-610 (April 2014): 1417–21. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.1417.

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This paper presents a novel approach to enhancing power-handling capability of metal-contact radio-frequency micro-electro-mechanical systems (RF MEMS) switches based on an Optimized Array Configured (OAC) contact dimples design. The simulation results reveal that this strategy can distribute the RF current more uniformly through each contact of the switch than traditional multiple parallel-configured contacts design, thus leading to a more effective reduction of current through each contact. Therefore, probability of micromelding and adhesion at metal contact point owing to localized high current induced Joule heating, which limits the power handling capability of the metal-contact RF MEMS switch, can be effectively reduced by the proposed approach. Comparing with previously fabricated switch, power-handling capability of the switch with OAC contact dimples can be dramatically improved over 390%.

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Anu, S. "Digitally Controlled Switch Mode Power Supply Based on Matrix Converter." Asian Journal of Electrical Sciences 3, no. 1 (May 5, 2014): 41–46. http://dx.doi.org/10.51983/ajes-2014.3.1.1914.

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In this paper, a switch mode power supply based on matrix converter is proposed for telecommunication applications. The conventional high power switch mode power supply consists of an AC/DC conversion with boost converter followed by a DC/DC converter to produce dc voltage. These rectifiers draw significant harmonic current from the utility, resulting in poor input power factor with high total harmonic distortion (THD). The proposed AC-AC system is an effective replacement of the conventional system which employs twostep power conversion. In the proposed approach, the matrix converter directly converts the low frequency (50 Hz, three phases) input to a high frequency (10 kHz, single phase) ac output without a dc-link. The output of the matrix converter is then processed via a high frequency isolation transformer to produce dc voltage. Control of the system ensures that output voltage is regulated and input currents are of high quality. The matrix converter forms an attractive topology of power converter for high power applications where factors such as absence of electrolytic capacitors, potentiality of increasing power density, reducing size and weight, good input power quality are fundamental. The proposed method is verified using Simulink toolbox of MATLAB 7.2 version.

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Algadair, Badr Saleh A., Mahmoud F. Elmorshedy, Jagabar Sathik Mohamed Ali, Dhafer Almakhles, and Ponnusamy Prem. "High Step-Up Thirteen Level Switched-Capacitor Inverter Topology for HFAC Power System." Processes 11, no. 3 (March 12, 2023): 848. http://dx.doi.org/10.3390/pr11030848.

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This article proposes two new high-frequency, thirteen-level switched capacitor inverter topologies. Compared with the counterpart existing topologies, which were recently published, the switch count, capacitor voltage, and voltage stress on the switch are reduced. In addition, the proposed topologies have inherited merits such as six-time voltage boosting levels and self-balanced capacitor voltages as well. The capacitor ripple voltages and the proposed topology performance are analyzed. The prototype setup is developed for 500W, and the results are verified. The maximum efficiency is approximately equal to 97.5% for simulation. Furthermore, it is approximately equal to 96.1% for experimental, and both are measured at an output power of 500 W. Finally, the characteristics of the proposed topologies are tested under several scenarios, such as modulation index variations and load changes, and the findings are reported.

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Grekhov, I. V., A. K. Kozlov, S. V. Korotkov, and A. L. Stepanyants. "A high-frequency reverse switch-on dynistor generator for high-power induction heating systems." Instruments and Experimental Techniques 43, no. 1 (January 2000): 63–65. http://dx.doi.org/10.1007/bf02759000.

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Liu, Bo. "Novel multicontact radio frequency microelectromechanical system switch in high-power–handling applications." Journal of Micro/Nanolithography, MEMS, and MOEMS 10, no. 1 (January 1, 2011): 011505. http://dx.doi.org/10.1117/1.3564864.

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IKEDA, Satoshi. "Resonant and Soft Switching Technologies for High-Frequency Switch-mode Power Converters." Journal of The Institute of Electrical Engineers of Japan 143, no. 1 (January 1, 2023): 17–20. http://dx.doi.org/10.1541/ieejjournal.143.17.

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MISHIMA, Tomokazu. "Essential and Core Technologies for High-Frequency Switch-mode Power Converters-Introduction-." Journal of The Institute of Electrical Engineers of Japan 143, no. 1 (January 1, 2023): 9–12. http://dx.doi.org/10.1541/ieejjournal.143.9.

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Cao, Fa Hai, and Jian Ping Lv. "High Performance Drive Design for Hybrid Stepper Motors." Advanced Materials Research 706-708 (June 2013): 822–25. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.822.

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A new frequency-voltage modulation drive technique is proposed and analyzed for the use of stepping motor. Hardware circuit and the current compensation control method are given in the article. STM32 MCU control the PWM switch power, and combine L6384 to drive the MOSFET tube which consisting of H-bridge driver circuit. It simplifies the power drive electronic circuit. A high performance drive design about the best of drive curve is used through the analysis and study of the current closed-loop control. It will significantly improve the stability in low frequency and the torque frequency characteristic in high frequency, and the design can be used for high-power automation equipment.

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Kamil Naji, Maham, Alaa Desher Farhood, and Adnan Hussein Ali. "Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (August 1, 2019): 971. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp971-978.

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<span>In this paper, a new type of Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) shunt capacitive switch is designed and studied. RF MEMS switch has a number of advantages in a modern telecommunication system such as low power consumption, easy to fabricate and power handling capacity at radio frequency. At high frequency applications, this switch shows very superior performance due to which it now became one of the key elements for RF application. In this proposed design, an innovative type of MEMS switch is designed. The MEMS switch structure consists of substrate, co-planar waveguide (CPW), dielectric material and a metallic bridge. The proposed MEMS switch has a dimension of 508 µm × 620 µm with a height of 500 µm. The substrate used is GaAs material. The relative permittivity of the substrate is 12.9. This proposed MEMS switch is designed and simulated in both UP (ON) state and DOWN (OFF) state. The proposed RF-MEMS switch is designed and simulated using Ansoft High frequency structure simulator (HFSS) electromagnetic simulator. The simulated result shows better performance parameters such as return loss ( <-10 dB) and insertion loss ( > -0.5 dB) in UP state, whereas return loss ( > -0.5 dB) and isolation (<-10 dB) in DOWN state. This switch has good isolation characteristics of – 43 dB at 27 GHz frequency.</span>

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Yang and Han. "A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter." Energies 12, no. 16 (August 9, 2019): 3082. http://dx.doi.org/10.3390/en12163082.

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This paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. It provides a detailed operational analysis of the converter; the multilevel (ML) organization of cells; voltage-balancing principles; current-balancing principles; loss comparison between Si-FETs and gallium-nitride (GaN)-FETs; and an optimal design consideration based on loss analysis. This analysis reveals that the switching losses of all power switches can be considerably reduced as the voltage across each switch can be set to half of the input voltage without an additional circuit or control strategy. Moreover, the current of each resonant inductor is automatically balanced by a proposed integrated magnetic (IM)-coupled inductor. Therefore, the operating frequency can be easily increased to near 1 MHz without applying high-performance switches. In addition, the resonant tanks of the converter can be a group of cells for multilevel operation, which indicates that the voltage across each switch is further reduced as more cells are added. Based on the results of the analysis, an optimal design consideration according to the resonant tank and switching frequency is discussed. The proposed converter was validated via a prototype converter with an input of 390 V, an output of 19.5 V/18 A, and a frequency of 1 MHz.

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Figur, S. A., F. van Raay, R. Quay, L. Vietzorreck, and V. Ziegler. "Simulation of RF MEMS based matching networks and a single pole double throw switch for Multiband T/R Modules." Advances in Radio Science 11 (July 4, 2013): 197–206. http://dx.doi.org/10.5194/ars-11-197-2013.

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Abstract. This work presents concepts and designs for two essential components of a frequency agile transmit and receive module based on Radio Frequency Micro Electro Mechanical System (RF MEMS) switches for the frequency range from 3.5 GHz up to 8.5 GHz. The advantages of a variable power amplifier (PA) matching compared to a fixed broadband solution are examined and discussed in context with the designed components. To demonstrate the principle functionality, an assembly concept is presented, which allows for the integration of a frequency agile 6 W power amplifier with surrounding components like phase shifters, switches and antennas. An RF MEMS switching element is introduced as a high isolation polarization switch, featuring low insertion loss as well as almost no DC power consumption.

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Sankin, Igor, V. Bondarenko, Robin L. Kelley, and Jeff B. Casady. "SiC Smart Power JFET Technology for High-Temperature Applications." Materials Science Forum 527-529 (October 2006): 1207–10. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1207.

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Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.

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Tang, Yu, Dekai Kong, and Haisheng Tong. "Analysis of Symmetric Dual Switch Converter under High Switching Frequency Conditions." Electronics 9, no. 12 (December 18, 2020): 2183. http://dx.doi.org/10.3390/electronics9122183.

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Electric vehicle batteries have the problem of low output voltage, so the application of a high-gain converter is a research hotspot. The symmetrical dual-switch high gain converter has the merits of simple structure, low voltage and current stress, and low EMI. Due to the deterioration of circuit performance caused by circuit parasitic parameters under high frequency operating conditions, the former analysis under low frequency condition cannot satisfy the requirements for performance evaluation. To clarify whether the symmetrical dual-switch high-gain converter can maintain its operating characteristics under high-frequency operating conditions, this paper establishes the converter model considering parasitic parameters, and deduces the sneak circuit modes at high frequency. The effects of parasitic parameters at high frequency on voltage gain, switch stress, and symmetrical operating are analyzed, which is beneficial for the selection and optimization of power devices. This paper believes that considering parasitic parameters may reduce the output gain of the symmetrical double-switch high-gain converter considering parasitic parameters under high frequency conditions, increase the switching stress, and affect the symmetry of the circuit operation when the parasitic parameter values are different. Finally, an experimental platform rated on 200 W with 200 kHz switching frequency is established, and experimental verification is given to verify the analysis.

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Zhang, Jin Bo, Bin Chen, Jia Jia Song, Zheng Yong Xiong, and Jing Feng Liu. "Research and Design on On-Line Contact of High Voltage Switch Circuit Breaker Temperature Rise Monitoring Device." Advanced Materials Research 1092-1093 (March 2015): 310–15. http://dx.doi.org/10.4028/www.scientific.net/amr.1092-1093.310.

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In order to make on-line monitoring on the temperature of high voltage switch circuit breakerand find outthermal fault in time. This paper puts forward a new method with radio frequency and magnetic saturation power supply technology to make on-line monitoring on the temperature of high voltage switch circuit breaker, it designs the high voltage switch circuit breaker contact temperature online monitoring device. The device mainly includes monolithic temperature collector and data receiver, they transmit data wirelessly, and this makes high temperature monitoring terminal and the data receiving terminal completely electrical isolated. Integrated temperature collector doesn’t need external power supply, it uses small CT saturation technology for continuous power. The experiment shows that the temperature error is ±2°C, it can meet online temperature monitoring requirements of high voltage switch circuit breaker contact.

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Zou, Aicheng, Zhong Liu, and Xingguo Han. "A Low-Power High-Efficiency Adaptive Energy Harvesting Circuit for Broadband Piezoelectric Vibration Energy Harvester." Actuators 10, no. 12 (December 10, 2021): 327. http://dx.doi.org/10.3390/act10120327.

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Existing piezoelectric vibration energy harvesting circuits require auxiliary power for the switch control module and are difficult to adapt to broadband piezoelectric vibration energy harvesters. This paper proposes a self-powered and low-power enhanced double synchronized switch harvesting (EDSSH) circuit. The proposed circuit consists of a low-power follow-up switch control circuit, reverse feedback blocking-up circuit, synchronous electric charge extraction circuit and buck-boost circuit. The EDSSH circuit can automatically adapt to the sinusoidal voltage signal with the frequency of 1 to 312.5 Hz that is output by the piezoelectric vibration energy harvester. The switch control circuit of the EDSSH circuit works intermittently for a very short time near the power extreme point and consumes a low amount of electric energy. The reverse feedback blocking-up circuit of the EDSSH circuit can keep the transmission efficiency at the optimal value. By using a charging capacitor of 1 mF, the charging efficiency of the proposed EDSSH circuit is 1.51 times that of the DSSH circuit.

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Rusdi, Muhamad, Jayadi Jayadi, Paulus Mangera, Acep Ponadi, and Petrus Wakole. "Speed Control of Induction Motor Using Variable Frequency Driver (VFD) Method Based On Arduino Nano." MATEC Web of Conferences 372 (2022): 06001. http://dx.doi.org/10.1051/matecconf/202237206001.

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This research aims to control the speed of an induction motor by exploiting changes in the fundamental frequency. The inverter as the main part of the variable frequency driver (VSD) uses the IRFZ44n Mosfet as a power switch with a full bridge topology to convert the DC source to AC power. Fundamental frequency manipulation takes place during the conversion process. The method used is to change the variable fundamental frequency of the SPWM signal generated by the Arduino nano to control the power switch. Experiments are carried out based on two stages, namely simulation, and experiment. The simulation is performed using the Pspice A/D Lite software to take time sample data (HIGH and LOW) at each frequency change of 13Hz, 25Hz, 38Hz, and 50Hz, then the sample data is input on the Arduino nano as an SPWM signal generator to control the power switch. The results of the variable frequency drive test are the frequencies generated to drive the induction motor at 12.50 Hz, 24.04 Hz, 35.71 Hz, and 48.54 Hz at motor speeds from 227.7 to 1359.6 rpm.

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Li, Huan, Hong Fa Ding, and Hou Xiu Xiao. "A Repeated Pulsed High Magnetic Field Generator for Frequency-Tunable Terahertz Sources." Advanced Materials Research 516-517 (May 2012): 1897–901. http://dx.doi.org/10.4028/www.scientific.net/amr.516-517.1897.

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This paper presents a Repeated Pulsed High Magnetic Field (RPHMF) generator for frequency-tunable terahertz sources, which mainly consists of a charging power supply, a capacitor bank, a discharging switch, a bitter magnet and other facilities. The four thyristors (80 mm, 4 kV) in series with a self-supplied gate driver are taken as the discharge switch which can be triggered when the high voltage capacitor C was charged to 300 V. Meanwhile, a bitter magnet with fast heat dissipation was designed and fabricated. According to the experiment, the designed system has a pulse repetition frequency of 0.1 Hz with a maximum magnetic field of 9 T.

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Zhao Yue, 赵越, 谢卫平 Xie Weiping, 李洪涛 Li Hongtao, 刘金锋 Liu Jinfeng, 刘宏伟 Liu Hongwei, 赵士操 Zhao Shicao, and 袁建强 Yuan Jianqiang. "Numerical simulation on factors affecting critical frequency of high-power photoconductive semiconductor switch." High Power Laser and Particle Beams 22, no. 11 (2010): 2778–82. http://dx.doi.org/10.3788/hplpb20102211.2778.

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Hertel, Jens Christian, Jacob Elias Faester Overgaard, Ivan Harald Holger Jorgensen, Toke Meyer Andersen, Martin Rodgaard, and Arnold Knott. "Synchronous Rectifier for High-Frequency Switch-Mode Power Supplies Using Phase-Locked Loops." IEEE Journal of Emerging and Selected Topics in Power Electronics 8, no. 3 (September 2020): 2227–37. http://dx.doi.org/10.1109/jestpe.2019.2945542.

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Gunda, R., D. S. Gleason, K. Kelkar, P. Kirawanich, W. C. Nunnally, and N. E. Islam. "Radio-Frequency Heating of GaAs and SiC Photoconductive Switch for High-Power Applications." IEEE Transactions on Plasma Science 34, no. 5 (October 2006): 1697–701. http://dx.doi.org/10.1109/tps.2006.876519.

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Babu, A. R. Vijay, P. M. Venkatesh, and Dr K. Suresh. "High Frequency Link Power Conversion System for Fuel cell Applications." International Journal of Engineering & Technology 7, no. 4.24 (November 27, 2018): 1. http://dx.doi.org/10.14419/ijet.v7i4.24.21760.

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In this paper an empirical model of the air breathing (ABFC) is proposed to investigate the cell voltage verses current density characteristics and harnessing of maximum energy from natural resource whenever it’s available. The power electronic converters role is important in between source and load. Proper controller can switch the converter in the desired time and improve the system performance and stability. The mathematical model of the ABFC is built in MATLAB/Simulink. The proposed system also has boost converter, bidirectional DC-DC converter and inverter for grid and energy integration. The boost inverter/buck rectifier in this system is controlled by ANFIS controller is for better output, boost and bidirectional DC-DC converters are controlled by PID controller in closed loop. Overall operations are based on modes main controller, which control the system operation in different modes. Any variations happening in the input, storage and load parameters, the controller changes the mode and operates the system in effective way.

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Xu, Baohe, Li Lu, and Dawei Gong. "Research on Real-time Simulation of Power Electronic Circuits Based on Simscape." Journal of Physics: Conference Series 2196, no. 1 (February 1, 2022): 012025. http://dx.doi.org/10.1088/1742-6596/2196/1/012025.

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Abstract In order to realize hardware-in-the-loop simulation of commonly used power electronic circuits, a method of joint simulation using Simcape and field programmable gate array (FPGA) is proposed. This article adopts a switch modeling method suitable for high-frequency characteristics, namely the switch function method. It effectively solves the problem of rigidity non-convergence in the modeling of the binary resistance method, as well as the transient error caused by the binary LC method when the system state is switched with the increase of the switching frequency, which reduces the simulation accuracy. Taking the single-phase full-bridge inverter circuit as an example, a Simscape model based on the state-space averaging method was established, and the HDL code was automatically generated using the Simscape HDL Workflow Advisor tool, and the hardware-in-the-loop simulation was completed with FPGA. Finally, the simulation results with Simulink comparison verify the effectiveness and feasibility of the method.

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Fu, Guo Hong, and Bin Xiong. "Research on New Type Medium-Power Synchronization IP Transmitter." Applied Mechanics and Materials 36 (October 2010): 344–48. http://dx.doi.org/10.4028/www.scientific.net/amm.36.344.

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A new medium-power frequency domain IP transmitter is developed in this paper, which uses the IP rectangle drive signal with high precision and good stability produced by CPLD and GPS punctual module, and adopts the four bridge legs of the new IPM to compose full bridge inverter switch. Experimental results show that this transmitter has many advantages, such as high precision frequency, high transmitting power, extremely good stability, portable and very good application effects.

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Bhuiyan, Mohammad A. S., Yeoh Zijie, Jae S. Yu, Mamun B. I. Reaz, Noorfazila Kamal, and Tae G. Chang. "Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver." Anais da Academia Brasileira de Ciências 88, no. 2 (May 31, 2016): 1089–98. http://dx.doi.org/10.1590/0001-3765201620150123.

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Modern Radio Frequency (RF) transceivers cannot be imagined without high-performance (Transmit/Receive) T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB) and linearity (IIP3) which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.

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Xia, Yi Hui, Xiao Feng Zhang, and Ming Zhong Qiao. "The Research of Output Voltage Error of Matrix Converter Decreased under Low Switch Frequency." Advanced Materials Research 971-973 (June 2014): 1194–97. http://dx.doi.org/10.4028/www.scientific.net/amr.971-973.1194.

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Its switch frequency can’?t be high because of the restrains of insulated gate bipolar transistors (IGBTS) when high power electrical motor driven by matrix converter. This paper mainly discuses about the reason for output voltage error with low switch frequency. And based on the reasons, a method for decreasing output voltage error is proposed, that is to say that referenced input current and output voltage is calculated by using their average value in one sample in the indirect space vector pulse modulation (ISVPWM) when switch frequency is low. Simulation results coincide with theoretical analysis, verifying that the proposed method is feasible and theoretical analysis is right.

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Joy, Kanaka, Anurag Swarnkar, M. S. Giridhar, Amitava DasGupta, and Deleep R. Nair. "RF MEMS capacitive shunt switch for low loss applications." Journal of Micromechanics and Microengineering 33, no. 3 (February 2, 2023): 034004. http://dx.doi.org/10.1088/1361-6439/acb58c.

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Abstract Radio frequency (RF) microelectromechanical system capacitive shunt switch with metal-to-metal contact is designed, fabricated and tested with the aim of having very low insertion loss (<0.2 dB) for high frequencies. The switch is designed with two identical parallel side beams with no overlapping with the signal line. This design has an added advantage of removing the self-actuation issues at high RF power. The measured isolation offered by the switch is greater than 40 dB at the resonant frequency, and the resonant frequency can be easily tuned by changing the length of a thin floating metal layer beneath the signal line.

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Li, Li Yi, Qi Ming Chen, Jia Xi Liu, He Zhu, and Guang Jun Tan. "The Research on Switch-Linear Hybrid of Precise Current Source." Applied Mechanics and Materials 416-417 (September 2013): 559–64. http://dx.doi.org/10.4028/www.scientific.net/amm.416-417.559.

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In this paper, a novel current control strategy of precise current source is presented, which combines switch power conversion mode with linear amplification mode. The linear power amplifier is used as the power converter in the current loop. The current controller is a double cascaded PI (DCPI) controller which is put up by the way of analog circuit, it can suppress the high frequency disturbance signal effectively. The switch-filter circuit can generate a special power supply for linear power amplifier, the voltage of this special power supply changes as the load voltage does. The topology of four-level H-Bridge works as the power converter of the switch power amplifier, the LC filter circuit can eliminate the current ripple caused by the PWM chopper.The simulation and experimental results verify that the Switch-Linear Hybrid (SLH) scheme is of high efficiency and output quality. The bandwidth of the precise current source is 5.4 kHz and the phase margin is 42 degree.

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Kiran Kumar, G., E. Parimalasundar, D. Elangovan, P. Sanjeevikumar, Francesco Lannuzzo, and Jens Bo Holm-Nielsen. "Fault Investigation in Cascaded H-Bridge Multilevel Inverter through Fast Fourier Transform and Artificial Neural Network Approach." Energies 13, no. 6 (March 11, 2020): 1299. http://dx.doi.org/10.3390/en13061299.

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In recent times, multilevel inverters are used as a high priority in many sizeable industrial drive applications. However, the reliability and performance of multilevel inverters are affected by the failure of power electronic switches. In this paper, the failure of power electronic switches of multilevel inverters is identified with the help of a high-performance diagnostic system during the open switch and low condition. Experimental and simulation analysis was carried out on five levels cascaded h-bridge multilevel inverter, and its output voltage waveforms were synthesized at different switch fault cases and different modulation index parameter values. Salient frequency-domain features of the output voltage signal were extracted using a Fast Fourier Transform decomposition technique. The real-time work of the proposed fault diagnostic system was implemented through the LabVIEW software. The Offline Artificial neural network was trained using the MATLAB software, and the overall system parameters were transferred to the LabVIEW real-time system. With the proposed method, it is possible to identify the individual faulty switch of multilevel inverters successfully.

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Morgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins, and Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.

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The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

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Zhao, Yanjun, Wentao Ge, Xiaobing Liang, Yue Yang, Jingxing Tang, and Junfeng Liu. "A Switched Capacitor Inverter Structure with Hybrid Modulation Method Lowering Switching Loss." Energies 16, no. 14 (July 24, 2023): 5574. http://dx.doi.org/10.3390/en16145574.

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The high-frequency modulation method (HFM) for a switched capacitor (SC) inverter often leads to high switching loss since it increases switching frequency. In order to reduce the switching frequency and switching loss in the HFM for SC inverter, this paper proposes a novel hybrid modulation strategy as well as a corresponding demo switched capacitor topology. The hybrid strategy limits the number of high-frequency switches, thus reducing the switching loss significantly. Meanwhile, the demo topology maintains the merits of current switched capacitor inverter such as low switch count, quadruple voltage-boosting ability and self-balancing capacity. The principle of the hybrid modulation method and the circuit configuration of the inverter are analyzed in detail. And comparisons are introduced to demonstrate the advantages of the proposed modulation method and topology. Finally, experimental results have proved the feasibility of the proposed inverter.

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Tian, Jianlong, and Patrick Hu. "Adjusting the frequency of an autonomous push–pull converter for wireless power transfer through a voltage-controlled variable capacitor structure." Wireless Power Transfer 4, no. 1 (February 16, 2017): 69–75. http://dx.doi.org/10.1017/wpt.2017.3.

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This paper proposes a Voltage-controlled Variable Capacitor Structure (VVCS) to adjust the frequency of an autonomous push–pull converter. Unlike traditional switch mode capacitors or inductors where active switches are used, the equivalent capacitance of the VVCS varies with the on/off periods of a diode controlled by a DC voltage. The frequency of the autonomous push–pull converter can be controlled by this DC voltage when the VVCS is used as a variable resonant capacitor. As no active switching is involved in the VVCS, the circuit operates more smoothly than its switch mode counterpart so as to provide a simple way to adjust the operating frequency of the autonomous push–pull converter for high frequency and low electro magnetic interference operations. Mathematical model is developed for the relationship between the equivalent capacitance of the VVCS and the DC control voltage, and is verified by experimental results at more than 900 kHz with an approximately 12 W inductive power transfer system.

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Journal articles on the topic 'High frequency power switch'

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