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Ambatipudi, Radhika. "High Frequency (MHz) Planar Transformers for Next Generation Switch Mode Power Supplies." Doctoral thesis, Mittuniversitetet, Avdelningen för elektronikkonstruktion, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-20270.
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Increasing the power density of power electronic converters while reducing or maintaining the same cost, offers a higher potential to meet the current trend inrelation to various power electronic applications. High power density converters can be achieved by increasing the switching frequency, due to which the bulkiest parts, such as transformer, inductors and the capacitor's size in the convertercircuit can be drastically reduced. In this regard, highly integrated planar magnetics are considered as an effective approach compared to the conventional wire wound transformers in modern switch mode power supplies (SMPS). However, as the operating frequency of the transformers increase from several hundred kHz to MHz, numerous problems arise such as skin and proximity effects due to the induced eddy currents in the windings, leakage inductance and unbalanced magnetic flux distribution. In addition to this, the core losses whichare functional dependent on frequency gets elevated as the operating frequency increases. Therefore, this thesis provides an insight towards the problems related to the high frequency magnetics and proposes a solution with regards to different aspects in relation to designing high power density, energy efficient transformers.The first part of the thesis concentrates on the investigation of high power density and highly energy efficient coreless printed circuit board (PCB) step-down transformers useful for stringent height DC-DC converter applications, where the core losses are being completely eliminated. These transformers also maintain the advantages offered by existing core based transformers such as, high coupling coefficient, sufficient input impedance, high energy efficiency and wide frequencyband width with the assistance of a resonant technique. In this regard, several coreless PCB step down transformers of different turn’s ratio for power transfer applications have been designed and evaluated. The designed multilayered coreless PCB transformers for telecom and PoE applications of 8,15 and 30W show that the volume reduction of approximately 40 - 90% is possible when compared to its existing core based counterparts while maintaining the energy efficiency of the transformers in the range of 90 - 97%. The estimation of EMI emissions from the designed transformers for the given power transfer application proves that the amount of radiated EMI from a multilayered transformer is lessthan that of the two layered transformer because of the decreased radius for thesame amount of inductance.The design guidelines for the multilayered coreless PCB step-down transformer for the given power transfer application has been proposed. The designed transformer of 10mm radius has been characterized up to the power level of 50Wand possesses a record power density of 107W/cm3 with a peak energy efficiency of 96%. In addition to this, the design guidelines of the signal transformer fordriving the high side MOSFET in double ended converter topologies have been proposed. The measured power consumption of the high side gate drive circuitvitogether with the designed signal transformer is 0.37W. Both these signal andpower transformers have been successfully implemented in a resonant converter topology in the switching frequency range of 2.4 – 2.75MHz for the maximum load power of 34.5W resulting in the peak energy efficiency of converter as 86.5%.This thesis also investigates the indirect effect of the dielectric laminate on the magnetic field intensity and current density distribution in the planar power transformers with the assistance of finite element analysis (FEA). The significanceof the high frequency dielectric laminate compared to FR-4 laminate in terms of energy efficiency of planar power transformers in MHz frequency region is also explored.The investigations were also conducted on different winding strategies such as conventional solid winding and the parallel winding strategies, which play an important role in the design and development of a high frequency transformer and suggested a better choice in the case of transformers operating in the MHz frequency region.In the second part of the thesis, a novel planar power transformer with hybrid core structure has been designed and evaluated in the MHz frequency region. The design guidelines of the energy efficient high frequency planar power transformerfor the given power transfer application have been proposed. The designed corebased planar transformer has been characterized up to the power level of 50W and possess a power density of 47W/cm3 with maximum energy efficiency of 97%. This transformer has been evaluated successfully in the resonant converter topology within the switching frequency range of 3 – 4.5MHz. The peak energy efficiency ofthe converter is reported to be 92% and the converter has been tested for the maximum power level of 45W, which is suitable for consumer applications such as laptop adapters. In addition to this, a record power density transformer has been designed with a custom made pot core and has been characterized in thefrequency range of 1 - 10MHz. The power density of this custom core transformer operating at 6.78MHz frequency is 67W/cm3 and with the peak energy efficiency of 98%.In conclusion, the research in this dissertation proposed a solution for obtaining high power density converters by designing the highly integrated, high frequency(1 - 10MHz) coreless and core based planar magnetics with energy efficiencies inthe range of 92 - 97%. This solution together with the latest semiconductor GaN/SiC switching devices provides an excellent choice to meet the requirements of the next generation ultra flat low profile switch mode power supplies (SMPS).
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Worapishet, Apisak. "High frequency low power switched-current techniques." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.392911.
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Kim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.
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With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic drawbacks of CMOS technology.
As an effort to overcome the challenges, the high-power handling T/R switches are introduced as the first part of this dissertation. The proposed differential switch topology and feed-forward capacitor helps reducing the voltage stress over the switch devices, enabling a linear power transmission. With the high-power T/R switches, a new transmitter front-end topology - differential PA and T/R switch topology with the multi-section PA output matching network - is also proposed. The multi-stage PA output matching network assists to relieve the voltage stress over the switch device even more, by providing a low switch operating impedance. By analyzing the power performance and efficiency of entire transmitter module, design methodology for the high-power handling and efficient transmitter module is established. Finally, the research in this dissertation provides low-cost, high-power handling, and efficient CMOS RF transmitter module for wireless applications.
4
Ambatipudi, Radhika. "Multilayered Coreless Printed Circuit Board (PCB) Step-down Transformers for High Frequency Switch Mode Power Supplies (SMPS)." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-13967.
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The Power Supply Unit (PSU) plays a vital role in almost all electronic equipment. The continuous efforts applied to the improvement of semiconductor devices such as MOSFETS, diodes, controllers and MOSFET drivers have led to the increased switching speeds of power supplies. By increasing the switching frequency of the converter, the size of passive elements such as inductors, transformers and capacitors can be reduced. Hence, the high frequency transformer has become the backbone in isolated AC/DC and DC/DC converters. The main features of transformers are to provide isolation for safety purpose, multiple outputs such as in telecom applications, to build step down/step up converters and so on. The core based transformers, when operated at higher frequencies, do have limitations such as core losses which are proportional to the operating frequency. Even though the core materials are available in a few MHz frequency regions, because of the copper losses in the windings of the transformers those which are commercially available were limited from a few hundred kHz to 1MHz. The skin and proximity effects because of induced eddy currents act as major drawbacks while operating these transformers at higher frequencies. Therefore, it is necessary to mitigate these core losses, skin and proximity effects while operating the transformers at very high frequencies. This can be achieved by eliminating the magnetic cores of transformers and by introducing a proper winding structure. A new multi-layered coreless printed circuit board (PCB) step down transformer for power transfer applications has been designed and this maintains the advantages offered by existing core based transformers such as, high voltage gain, high coupling coefficient, sufficient input impedance and high energy efficiency with the assistance of a resonant technique. In addition, different winding structures have been studied and analysed for higher step down ratios in order to reduce copper losses in the windings and to achieve a higher coupling coefficient. The advantage of increasing the layer for the given power transfer application in terms of the coupling coefficient, resistance and energy efficiency has been reported. The maximum energy efficiency of the designed three layered transformers was found to be within the range of 90%-97% for power transfer applications operated in a few MHz frequency regions. The designed multi-layered coreless PCB transformers for given power applications of 8, 15 and 30W show that the volume reduction of approximately 40-90% is possible when compared to its existing core based counterparts. The estimation of EMI emissions from the designed transformers proves that the amount of radiated EMI from a three layered transformer is less than that of the two layered transformer because of the decreased radius for the same amount of inductance. Multi-layered coreless PCB gate drive transformers were designed for signal transfer applications and have successfully driven the double ended topologies such as the half bridge, the two switch flyback converter and resonant converters with low gate drive power consumption of about half a watt. The performance characteristics of these transformers have also been evaluated using the high frequency magnetic material made up of NiZn and operated in the 2-4MHz frequency region. These multi-layered coreless PCB power and signal transformers together with the latest semiconductor switching devices such as SiC and GaN MOSFETs and the SiC schottky diode are an excellent choice for the next generation compact SMPS.
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Kotte, Hari Babu. "High Speed (MHz) Switch Mode Power Supplies (SMPS) using Coreless PCB Transformer Technology." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-13964.
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The most essential unit required for all the electronic devices is the Power Supply Unit (PSU). The main objective of power supply designers is to reduce the size, cost and weight, and to increase the power density of the converter. There is also a requirement to have a lower loss in the circuit and hence in the improvement of energy efficiency of the converter circuit. Operating the converter circuits at higher switching frequencies reduces the size of the passive components such as transformers, inductors, and capacitors, which results in a compact size, weight, and increased power density of the converter. At present the switching frequency of the converter circuit is limited due to the increased switching losses in the existing semiconductor devices and in the magnetic area, because of increased hysteresis and eddy current loss in the core based transformer. Based on continuous efforts to improve the new semi conductor materials such as GaN/SiC and with recently developed high frequency multi-layered coreless PCB step down power transformers, it is now feasible to design ultra-low profile, high power density isolated DC/DC and AC/DC power converters. This thesis is focussed on the design, analysis and evaluation of the converters operating in the MHz frequency region with the latest semi conductor devices and multi-layered coreless PCB step-down power and signal transformers. An isolated flyback DC-DC converter operated in the MHz frequency with multi-layered coreless PCB step down 2:1 power transformer has been designed and evaluated. Soft switching techniques have been incorporated in order to reduce the switching loss of the circuit. The flyback converter has been successfully tested up to a power level of 10W, in the switching frequency range of 2.7-4 MHz. The energy efficiency of the quasi resonant flyback converter was found to be in the range of 72-84% under zero voltage switching conditions (ZVS). The output voltage of the converter was regulated by implementing the constant off-time frequency modulation technique. Because of the theoretical limitations of the Si material MOSFETs, new materials such as GaN and SiC are being introduced into the market and these are showing promising results in the converter circuits as described in this thesis. Comparative parameters of the semi conductor materials such as the vi energy band gap, field strengths and figure of merit have been discussed. In this case, the comparison of an existing Si MOSFET with that of a GaN MOSFET has been evaluated using a multi-layered coreless PCB step-down power transformer for the given input/output specifications of the flyback converter circuit. It has been determined that the energy efficiency of the 45 to 15V regulated converter using GaN was improved by 8-10% compared to the converter using the Si MOSFET due to the gate drive power consumption, lower conduction losses and improved rise/fall times of the switch. For some of the AC/DC and DC/DC applications such as laptop adapters, set-top-box, and telecom applications, high voltage power MOSFETs used in converter circuits possess higher gate charges as compared to that of the low voltage rating MOSFETs. In addition, by operating them at higher switching frequencies, the gate drive power consumption, which is a function of frequency, increases. The switching speeds are also reduced due to the increased capacitance. In order to minimize this gate drive power consumption and to increase the frequency of the converter, a cascode flyback converter was built up using a multi-layered coreless PCB transformer and this was then evaluated. Both simulation and experimental results have shown that with the assistance of the cascode flyback converter the switching speeds of the converter were increased including the significant improvement in the energy efficiency compared to that of the single switch flyback converter. In order to further maximize the utilization of the transformer, to reduce the voltage stress on MOSFETs and to obtain the maximum power density from the power converter, double ended topologies were chosen. For this purpose, a gate drive circuitry utilising the multi-layered coreless PCB gate drive transformer was designed and evaluated in both a Half-bridge and a Series resonant converter. It was found that the gate drive power consumption using this transformer was less than 0.8W for the frequency range of 1.5-3.5MHz. In addition, by using this gate drive circuitry, the maximum energy efficiency of the series resonant converter was found to be 86.5% with an output power of 36.5W.
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Motto, Kevin. "Application of High-Power Snubberless Semiconductor Switches in High-Frequency PWM Converters." Thesis, Virginia Tech, 2000. http://hdl.handle.net/10919/35778.
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For many years, power electronics in the high-power area was performed with extremely slow semiconductor switches. These switches, including the thyristor and the Gate Turn-Off (GTO) thyristor, had the capacity to handle very high voltages and currents but lacked the ability to perform high frequency switching. Low-power converters, such as computer power supplies and low horsepower motor drives, have employed high-frequency switching for years and have benefited from very nice output waveforms, good control dynamic performance, and many other advantages compared to low frequency switching. Recent improvements in high-power semiconductor technology has brought switching performance similar to that of the low-power MOSFETs and IGBTs to the high-power area through the advancement of the IGBT's ratings to create the High Voltage IGBT (HVIGBT) and the development of new GTO-derived devices including the Integrated Gate Commutated Thyristor (IGCT) and the Emitter Turn-Off (ETO) thyristor. These new devices all feature high switching speed and the capability to turn off without the requirement for a turn-off snubber. With these new device technologies the high-power field of power electronics can realize dramatic improvements in the performance of systems for utility applications and motor drives.
However, with these high-speed switches come new issues relating to noise, protection, performance of diodes, and thermal management in high-frequency applications. This thesis addresses the application of these new devices, especially the ETO and the IGCT.
Examples of each device technology (IGBT, IGCT, and ETO) have been characterized in both their switching performance and conduction loss. The tests performed show how these new devices may be applied to various applications. The switching loss, especially related to turn-off, is the dominant factor in the power dissipation of the high-power switches, so knowledge of these characteristics are very important in the system design.
To demonstrate the operation of the ETO, two power converters were constructed. The first was a 100 kW DC/DC converter, which demonstrated the operation of the ETO in a typical building block configuration, the half-bridge. The second system, a 1 MegaVolt-Amp (MVA) three-phase inverter, demonstrated the ETO in an application where the switching frequency and power level were both high. The test results demonstrate the expected characteristics of the high-frequency converters. The development of the ETO's gate driver is described.
During the inverter testing, a new failure mode was found involving a parasitic diode within the ETO. This failure mode was analyzed and solutions were proposed. One of the proposed solutions was implemented and there were no more failures of this type. Another possible failure mode regarding a circulating current in an IGCT-based system is also analyzed.
Soft-switching techniques can help reduce the switching loss in power semiconductor switches. Several topologies were considered for application in the high-power area, and one was selected for further investigation. A prototype Zero Current Transition (ZCT) circuit was developed using an IGCT as the main switch. The turn-off loss was reduced dramatically through the tested ZCT circuit, and the diode recovery was also alleviated.Master of Science
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Wong, Fu Keung, and n/a. "High Frequency Transformer for Switching Mode Power Supplies." Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20050211.110915.
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A power supply is an essential part of all electronic devices. A switching mode power supply is a light weight power solution for most modern electronic equipment. The high frequency transformer is the backbone of modern switched mode power supplies. The skin effect and proximity effects are major problems in high frequency transformer design, because of induced eddy currents. These effects can result in transformers being destroyed and losing their power transferring function at high frequencies. Therefore, eddy currents are unwanted currents in high frequency transformers. Leakage inductance and the unbalanced magnetic flux distribution are two further obstacles for the development of high frequency transformers. Winding structures of power transformers are also a critical part of transformer design and manufacture, especially for high frequency applications. A new planar transformer with a helical winding structure has been designed and can maintain the advantages of existing planar transformers and significantly reduce the eddy currents in the windings. The maximum eddy current density can be reduced to 27% of the density of the planar transformer with meander type winding structure and 33% of the density of the transformer with circular spiral winding structure at an operating frequency of 1MHz. The voltage ratio of the transformer with helical winding structure is effectively improved to 150% of the voltage ratio of the planar transformer with circular spiral coils. With the evenly distributed magnetic flux around the winding, the planar transformer with helical winding structure is excellent for high frequency switching mode power supplies in the 21st Century.
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Wong, Fu Keung. "High Frequency Transformer for Switching Mode Power Supplies." Thesis, Griffith University, 2004. http://hdl.handle.net/10072/367650.
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A power supply is an essential part of all electronic devices. A switching mode power supply is a light weight power solution for most modern electronic equipment. The high frequency transformer is the backbone of modern switched mode power supplies. The skin effect and proximity effects are major problems in high frequency transformer design, because of induced eddy currents. These effects can result in transformers being destroyed and losing their power transferring function at high frequencies. Therefore, eddy currents are unwanted currents in high frequency transformers. Leakage inductance and the unbalanced magnetic flux distribution are two further obstacles for the development of high frequency transformers. Winding structures of power transformers are also a critical part of transformer design and manufacture, especially for high frequency applications. A new planar transformer with a helical winding structure has been designed and can maintain the advantages of existing planar transformers and significantly reduce the eddy currents in the windings. The maximum eddy current density can be reduced to 27% of the density of the planar transformer with meander type winding structure and 33% of the density of the transformer with circular spiral winding structure at an operating frequency of 1MHz. The voltage ratio of the transformer with helical winding structure is effectively improved to 150% of the voltage ratio of the planar transformer with circular spiral coils. With the evenly distributed magnetic flux around the winding, the planar transformer with helical winding structure is excellent for high frequency switching mode power supplies in the 21st Century.Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
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Nuttall, Daniel Robert. "Advanced high frequency switched-mode power supply techniques and applications." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/advanced-high-frequency-switchedmode-power-supply-techniques-and-applications(5792cb86-58e3-488b-b27e-559c18e55250).html.
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This Thesis examines the operation and dynamic performance of a single-stage, single-switch power factor corrector, S4 PFC, with an integrated magnetic device, IM. Also detailed isthe development and analysis of a high power light emitting diode, HP LED, power factorcorrection converter and proposed voltage regulation band control approach.The S4 PFC consists of a cascaded discontinuous current mode, DCM, boost stage anda continuous current mode, CCM, forward converter. The S4 PFC achieves a high powerfactor, low input current harmonics and a regulated voltage output, utilising a singleMOSFET. A steady-state analysis of the S4 PFC with the IM is performed, identifying theoperating boundary conditions for the DCM power factor correction stage and the CCMoutput voltage regulation stage. Integrated magnetic analysis focuses on understanding theperformance, operation and generated flux paths within the IM core, ensuring the device doesnot affect the normal operation of the converter power stage. A design method for the S4 PFCwith IM component is developed along with a cost analysis of this approach. Analysis predictsthe performance of the S4 PFC and the IM, and the theoretical work is validated by MATLABand SABER simulations and measurements of a 180 W prototype converter.It is not only the development of new topological approaches that drives theadvancement of power electronic techniques. The recent emergence of HP LEDs has led to aflurry of new application areas for these devices. A DCM buck-boost converter performs thepower factor correction and energy storage, and a cascaded boundary conduction current modebuck converter regulates the current through the LED arrays. To match the useful operatinglifetime of the HP LEDs, electrolytic capacitors are not used in the PFC converter. Analysisexamines the operation and dynamic characteristics of a PFC converter with low capacitiveenergy storage capacity and its implications on the control method. A modified regulationband control approach is proposed to ensure a high power factor, low input current harmonicsand output voltage regulation of the PFC stage. Small signal analysis describes the dynamicperformance of the PFC converter, Circle Criterion is used to determine the loop stability.Theoretical work is validated by SABER and MATLAB simulations and measurements of a180 W prototype street luminaire.
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Williams, Richard. "High frequency multi-element transformers for switched-mode power supplies." Thesis, University of Bristol, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283625.
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LaBella, Thomas Matthew. "A High-Efficiency Hybrid Resonant Microconverter for Photovoltaic Generation Systems." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/50526.
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The demand for increased renewable energy production has led to increased
photovoltaic (PV) installations worldwide. As this demand continues to grow, it is
important that the costs of PV installations decrease while the power output capability
increases. One of the components in PV installations that has lots of room for improvement
is the power conditioning system. The power conditioning system is responsible for
converting the power output of PV modules into power useable by the utility grid while
insuring the PV array is outputting the maximum available power. Modular power
conditioning systems, where each PV module has its own power converter, have been
proven to yield higher output power due to their superior maximum power point tracking
capabilities. However, this comes with the disadvantages of higher costs and lower power
conversion efficiencies due to the increased number of power electronics converters. The
primary objective of this dissertation is to develop a high-efficiency, low cost
microconverter in an effort to increase the output power capability and decrease the cost of
modular power conditioning systems.
First, existing isolated dc-dc converter topologies are explored and a new topology
is proposed based on the highly-efficient series resonant converter operating near the series
resonant frequency. Two different hybrid modes of operation are introduced in order to
add wide input-voltage regulation capability to the series resonant converter while
achieving high efficiency through low circulating currents, zero-current switching (ZCS)
of the output diodes, zero-voltage switching (ZVS) and/or ZCS of the primary side active
switches, and direct power transfer from the source to the load for the majority of the
switching cycle. Each operating mode is analyzed in detail using state-plane trajectory
plots. A systematic design approach that is unique to the newly proposed converter is
presented along with a detailed loss analysis and loss model. A 300-W microconverter
prototype is designed to experimentally validate the analysis and loss model. The converter
featured a 97.7% weighted California Energy Commission (CEC) efficiency with a
nominal input voltage of 30 V. This is higher than any other reported CEC efficiency for
PV microconverters in literature to date.
Each operating mode of the proposed converter can be controlled using simple
fixed-frequency pulse-width modulation (PWM) based techniques, which makes
implementation of control straightforward. Simplified models of each operating mode are
derived as well as control-to-input voltage transfer functions. A smooth transition method
is then introduced using a two-carrier PWM modulator, which allows the converter to
transition between operating modes quickly and smoothly. The performance of the voltage
controllers and transition method were verified experimentally.
To ensure the proposed converter is compatible with different types of modular
power conditioning system architectures, system-level interaction issues associated with
different modular applications are explored. The first issue is soft start, which is necessary
when the converter is beginning operation with a large capacitive load. A novel soft start
method is introduced that allows the converter to start up safely and quickly, even with a
short-circuited output. Maximum power point tracking and double line frequency ripple
rejection are also explored, both of which are very important to ensuring the PV module is
outputting the maximum amount of available power.
Lastly, this work deals with efficiency optimization of the proposed converter. It
is possible to use magnetic integration so that the resonant inductor can be incorporated
into the isolation transformer by way of the transformer leakage inductance in order to
reduce parts count and associated costs. This chapter, however, analyzes the disadvantages
to this technique, which are increased proximity effect losses resulting in higher conduction
losses. A new prototype is designed and tested that utilizes an external resonant inductor
and the CEC efficiency was increased from 97.7% to 98.0% with a marginal 1.8% total
cost increase. Additionally, a variable frequency efficiency optimization algorithm is
proposed which increases the system efficiency under the high-line and low-line input
voltage conditions. This algorithm is used for efficiency optimization only and not control,
so the previously presented simple fixed-frequency modeling and control techniques can
still be utilized.Ph. D.
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Sun, Keyao. "Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/103743.
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Due to the superior characteristics compared to its silicon (Si) counterpart, the wide bandgap (WBG) semiconductor enables next-generation power electronics systems with higher efficiency and higher power density. With higher blocking voltage available, WBG devices, especially the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), have been widely explored in various medium-voltage (MV) applications in both industry and academia. However, due to the high di/dt and high dv/dt during the switching transient, potential overcurrent, overvoltage, and gate failure can greatly reduce the reliability of implementing SiC MOSFETs in an MV system.
By utilizing the parasitic inductance between the Kelvin- and the power-source terminal, a short-circuit (SC) and overload (OL) dual-protection scheme is proposed for overcurrent protection. A full design procedure and reliability analysis are given for SC circuit design. A novel OL circuit is proposed to protect OL faults at the gate-driver level. The protection procedure can detect an SC fault within 50 nanoseconds and protect the device within 1.1 microsecond. The proposed method is a simple and effective solution for the potential overcurrent problem of the SiC MOSFET.
For SiC MOSFETs in series-connection, the unbalanced voltages can result in system failure due to device breakdown or unbalanced thermal stresses. By injecting current during the turn-off transient, an active dv/dt control method is used for voltage balancing. A 6 kV phase-leg using eight 1.7 kV SiC MOSFETs in series-connection has been tested with voltage balanced accurately. Modeling of the stacked SiC MOSFET with active dv/dt control is also done to summarize the design methodology for an effective and stable system. This method provides a low-loss and compact solution for overvoltage problems when MV SiC MOSFETs are connected in series.
Furthermore, a scalable auxiliary power network is proposed to prevent gate failure caused by unstable gate voltage or EMI interference. The two-stage auxiliary power network (APN) architecture includes a wireless power transfer (WPT) converter supplied by a grounded low voltage dc bus, a high step-down-ratio (HSD) converter powered from dc-link capacitors, and a battery-based mini-UPS backup power supply. The auxiliary-power-only pre-charge and discharge circuits are also designed for a 6 kV power electronics building block (PEBB). The proposed architecture provides a general solution of a scalable and reliable auxiliary power network for the SiC-MOSFET-based MV converter.
For the WPT converter, a multi-objective optimization on efficiency, EMI mitigation, and high voltage insulation capability have been proposed. Specifically, a series-series-CL topology is proposed for the WPT converter. With the optimization and new topology, a 120 W, 48 V to 48 V WPT converter has been tested to be a reliable part of the auxiliary power network.
For the HSD converter, a novel unidirectional voltage-balancing circuit is proposed and connected in an interleaved manner, which provides a fully modular and scalable solution. A ``linear regulator + buck" solution is proposed to be an integrated on-board auxiliary power supply. A 6 kV to 45 V, 100 W converter prototype is built and tested to be another critical part of the auxiliary power network.Doctor of Philosophy
The wide bandgap semiconductor enables next-generation power electronics systems with higher efficiency and higher power density which will reduce the space, weight, and cost for power supply and conversion systems, especially for renewable energy. However, by pushing the system voltage level higher to medium-voltage of tens of kilovolts, although the system has higher efficiency and simpler control, the reliability drops. This dissertation, therefore, focusing on solving the possible overcurrent, overvoltage, and gate failure issues of the power electronics system that is caused by the high voltage and high electromagnetic interference environment. By utilizing the inductance of the device, a dual-protection method is proposed to prevent the overcurrent problem. The overcurrent fault can be detected within tens of nanoseconds so that the device will not be destroyed because of the huge fault current. When multiple devices are connected in series to hold higher voltage, the voltage sharing between different devices becomes another issue. The proposed modeling and control method for series-connected devices can balance the shared voltage, and make the control system stable so that no overvoltage problem will happen due to the non-evenly distributed voltages. Besides the possible overcurrent and overvoltage problems, losing control of the devices due to the unreliable auxiliary power supply is another issue. This dissertation proposed a scalable auxiliary power network with high efficiency, high immunity to electromagnetic interference, and high reliability. In this network, a wireless power transfer converter is designed to provide enough insulation and isolation capability, while a switched capacitor converter is designed to transfer voltage from several kilovolts to tens of volts. With the proposed overcurrent protection method, voltage sharing control, and reliable auxiliary power network, systems utilizing medium-voltage wide-bandgap semiconductor will have higher reliability to be implemented for different applications.
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Wang, Kunrong. "High-Frequency Quasi-Single-Stage (QSS) Isolated AC-DC and DC-AC Power Conversion." Diss., Virginia Tech, 1998. http://hdl.handle.net/10919/29394.
Full textAbstract:
The generic concept of quasi-single-stage (QSS) power conversion topology for ac-dc rectification and dc-ac inversion is proposed. The topology is reached by direct cascading and synchronized switching of two variety of buck or two variety of boost switching networks. The family of QSS power converters feature single-stage power processing without a dc-link low-pass filter, a unidirectional pulsating dc-link voltage, soft-switching capability with minimal extra commutation circuitry, simple PWM control, and high efficiency and reliability.
A new soft-switched single-phase QSS bi-directional inverter/rectifier (charger) topology is derived based on the QSS power conversion concept. A simple active voltage clamp branch is used to clamp the otherwise high transient voltage on the current-fed ac side, and at the same time, to achieve zero-voltage-switching (ZVS) for the switches in the output side bridge. Seamless four-quadrant operation in the inverter mode, and rectifier operation with unity power factor in the charger (rectifier) mode are realized with the proposed uni-polar center-aligned PWM scheme. Single-stage power conversion, standard half-bridge connection of devices, soft-switching for all the power devices, low conduction loss, simple center-aligned PWM control, and high reliability and efficiency are among its salient features. Experimental results on a 3 kVA bi-directional inverter/rectifier prototype validate the reliable operation of the circuit. Other single-phase and three-phase QSS bi-directional inverters/rectifiers can be easily derived as topological extensions of the basic QSS bi-directional inverter/rectifier.
A new QSS isolated three-phase zero-voltage/zero-current-switching (ZVZCS) buck PWM rectifier for high-power off-line applications is also proposed. It consists of a three-phase buck bridge switching under zero current and a phase-shift-controlled full-bridge with ZVZCS, while no intermediate dc-link is involved. Input power and displacement factor control, input current shaping, tight output voltage regulation, high-frequency transformer isolation, and soft-switching for all the power devices are realized in a unified single stage. Because of ZVZCS and single-stage power conversion, it can operate at high switching frequency while maintaining reliable operation and achieving higher efficiency than standard two-stage approaches. A family of isolated ZVZCS buck rectifiers are obtained by incorporating various ZVZCS schemes for full-bridge dc-dc converters into the basic QSS isolated buck rectifier topology. Experimental and simulation results substantiate the reliable operation and high efficiency of selected topologies.
The concept of charge control (or instantaneous average current control) of three-phase buck PWM rectifiers is introduced. It controls precisely the average input phase currents to track the input phase voltages by sensing and integrating only the dc rail current, realizes six-step PWM, and features simple implementation, fast dynamic response, excellent noise immunity, and is easy to realize with analog circuitry or to integrate. One particular merit of the scheme is its capability to correct any duty-cycle distortion incurred on only one of the two active duty-cycles which often happens in the soft-switched buck rectifiers, another merit is the smooth transition of the input currents between the 60o sectors. Simulation and preliminary experimental results show that smooth operations and high quality sinusoidal input currents in the full line cycle are achieved with the control scheme.Ph. D.
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Leigh, Matthew. "HIGH POWER PULSED FIBER LASER SOURCES AND THEIR USE IN TERAHERTZ GENERATION ." Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/193797.
Full textAbstract:
In this dissertation I report the development of high power pulsed fiber laser systems. These systems utilize phosphate glass fiber for active elements, instead of the industry-standard silica fiber. Because the phosphate glass allows for much higher doping of rare-earth ions than silica fibers, much shorter phosphate fibers can be used to achieve the same gain as longer silica fibers.This single-frequency laser technology was used to develop an all-fiber actively Q-switched fiber lasers. A short cavity is used to create large spacing between longitudinal modes. Using this method, we demonstrated the first all-fiber Q-switched fiber laser in the 1 micron region.In addition to creating high peak powers with Q-switched lasers, created even higher powers using fiber amplifier systems. High power fiber lasers typically produce spectral broadening through the nonlinear effects of stimulated Raman scattering, stimulated Brullion scattering, and self-phase modulation. The thresholds for these nonlinearities scale inversely with intensity and length. Thus, we used a short phosphate fiber gain stage to reduce the length, and a large core fiber final stage to reduce intensity. In this way we were able to generate high peak power pulses while avoiding visible nonlinearities, and keeping a narrow bandwidth.The immediate goal of developing these high power fiber laser systems was to generate narrowband terahertz radiation. Two different wavelengths were combined into the final amplifier stage at orthogonal polarizations. These were collimated and directed into a GaSe crystal, which has a very high figure of merit for THz generation. The two wavelengths combined in the crystal through the process of nonlinear difference frequency generation. This produced a narrowband beam of THz pulses, at higher powers than previous narrowband THz pulses produced by eyesafe fiber lasers.
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Ahn, Minsik. "Design and Analysis of High Power and Low Harmonic for Multi Band Wireless Application." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/19712.
Full textAbstract:
The objective of this research is to demonstrate the feasibility of the implementation of low-cost, small-size, and high power RF front ends using CMOS technology which has been known not to be suitable for high-power applications due to its material characteristic.
One part of this research focuses on developing GaAs switches for multi band and multi mode high power applications.
The development of RF front end switches for high power applications using CMOS technology is very challenging in that the characteristics of CMOS technology such as low breakdown voltages, slow electron mobility and existence of substrate junction diodes are limiting power handling capability of CMOS technology. Various topologies of CMOS switches have been employed in implementing high power RF front end CMOS switches in order to overcome material limitations of CMOS technology in high power applications. Based on measurement data such as power handling capability and S-parameters of fabricated CMOS switches, the feasibility of use of CMOS technology in high power RF antenna switch design has been studied, and novel methods of designing CMOS switches to improve the power handling capability without compensating S-parameter performance are proposed.
As a part of this research, multi-band and multi-mode power switches using GaAs technology are fabricated and tested for use of the commercial applications such as handsets covering GSM, PCS/DCS, and UMTS bands. Current commercial RF switch products demand small size, low cost and low voltage control as the number of wireless standards integrated in a single application increases. This research provides a solution for commercial products which can meet all the specifications as well as needs required in the wireless market.
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Hietakangas, S. (Simo). "Design methods and considerations of supply modulated switched RF power amplifiers." Doctoral thesis, Oulun yliopisto, 2012. http://urn.fi/urn:isbn:9789514298363.
Full textAbstract:
Abstract This thesis studies the design methods and properties of supply-modulated switch-mode radio frequency power amplifiers. Besides simulation based studies and theory review, two amplifiers were designed: a discrete MESFET class E amplifier (0.5 W at 1 GHz), and an integrated pHEMT class E-1 amplifier (2.0 W at 1.6 GHz) with an on-chip resonator. The existing design methods of the resonant output network of switching amplifiers were reviewed and some extensions on the handling of nonlinear capacitances were proposed. The effects of varying supply voltage were studied and suggestions were given to minimize Vdd / AM and Vdd / PM distortion in supply modulated amplifiers. The implementation of the bias feed was also discussed resulting in proposing a combination of a short transmission line and a small inductor, which provides both fast supply modulation and little effect on harmonic impedances. The main contributions are related to the study of the input impedance of a class E power amplifier, where the effects of supply dependent input impedance and timing skew generated by injected harmonic distortion were analyzed. The stabilization of the amplifier was also discussed. Based on the findings, a push-pull class E amplifier with extra cross-coupled feedback capacitors and second harmonic traps at the gates appears to be a very good starting point for a further studyTiivistelmä Tämä väitöstyö käsittelee radiotaajuuksilla toimivien käyttöjännitemoduloitujen kytkintehovahvistimien ominaisuuksia ja suunnittelumenetelmiä. Suunnittelumenetelmiin liittyvän katsauksen ja simulaatioihin perustuvan tutkimusten lisäksi kaksi vahvistinta toteutettiin väitöstutkimuksen aikana: diskreettikomponentein toteutettu E-luokan vahvistin (MESFET, 0.5 W ja 1 GHz) ja integroituna piirinä toteutettu käänteinen E-luokan vahvistin (pHEMT, 2.0 W ja 1.6 GHz), jonka lähdön resonaattoripiiri sisällytettiin integroituun piiriin. Kytkinvahvistimien suunnittelumenetelmiä verrattiin ja kehitettiin edelleen siten, että suunnitteluvaiheessa voidaan ottaa huomioon esim. transistoripiirin takaisinkytkennässä olevan kapasitanssin epälineaarisuus. Työssä tutkittiin myös käyttöjännitemodulaation vaikutusta kytkinvahvistimien toimintaan, ja tutkimuksen tuloksena annettiin muutamia ehdotuksia käyttöjänniteriippuvan amplitudi- (Vdd / AM) ja vaihemodulaation (Vdd / PM) vähentämiseksi. Lähdön biasointipiirin toteutukseen suositeltiin pienen kelan ja siirtolinjan yhdistelmää. Yhdistelmän avulla pyritään maksimoimaan modulaationopeus ja minimoimaan vaikutukset harmonisiin impedansseihin. Pääkohtina väitöksessä ovat E-luokan kytkinvahvistimesta saadut tutkimus- ja mittaushavainnot käyttöjännitteen funktiona muuttuvasta transistorin tuloimpedanssista sekä suurikokoisen transistorin tuloissa tapahtuvan, säröytymisen aiheuttaman tulosignaalien ajoitusvirheen analyysi. Näiden lisäksi vahvistimen stabiilisuuteen kiinnitettiin huomiota. Saatujen havaintojen perusteella voimme todeta, että push-pull -tyyppinen E-luokan vahvistin olisi mielenkiintoinen valinta jatkotutkimuksille
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Guzel, Kutlay. "X-band High Power Solid State Rf Switch." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614654/index.pdf.
Full textAbstract:
RF/Microwave switches are widely used in microwave measurement systems,
telecommunication and radar applications. The main purposes of RF switches are
Tx-Rx switching, band select and switching the signal between different paths. Thus,
they are key circuits especially in T/R modules. Wideband operation is an important
criterion in EW applications. High power handling is also a key feature especially
for radars detecting long range.
In this study, different types of high power solid state switches operating at X-Band
are designed, fabricated and measured. The main objectives are small size and high
power handling while keeping good return loss and low insertion loss. The related
studies are investigated and analyzed. Solutions for increasing the power handling
are investigated, related calculations are done. Better bias conditions are also
analyzed. The measurement results are compared with simulations and analysis.
Circuit designs and simulations are performed using AWR®and CST®
.
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Kumar, Rajesh. "High power Tesla driven miniature plasma opening switch." Thesis, Loughborough University, 2009. https://dspace.lboro.ac.uk/2134/5478.
Full textAbstract:
The plasma opening switch (POS) is used in pulsed power systems where a very fast opening and high current switch is required. Plasma is injected into the switch, which carries a large conduction current, before it opens in a process that lasts for a few nanosecond and transfers the current to a parallel-connected load at a much increased voltage and with a much shorter rise time. The conduction and opening times of the switch are dependent on plasma parameters such as the distribution, speed and species, all of which are determined by the plasma source. Most of the earlier reported work involves large dimension POSs and a correspondingly high input current (more than 100 kA) and uses carbon plasma. One main objective of the present research was to achieve a low input current (20 kA) and miniaturised POS by using hydrogen plasma rather than carbon plasma on account of its lower mass. A cable gun was selected for producing the plasma, since although this produces both hydrogen and carbon plasma these arise different times during its operation. For the present application a Tesla transformer was used in preference to a Marx generator to produce an initial high voltage pulse for the system, on the basis of its simpler design and cost effectiveness. This transformer together with an associated water PFL (pulse forming line) and pressurised switch was capable of producing a load current in excess of 20 kA with a rise time of 53 ns, which was fed through the POS to the final load. Special diagnostics arrangements were necessary to measure the fast high current and voltage pulse a in nonintrusive way. Faraday cups and a high speed camera were used to measure the plasma parameters. The overall system built (i.e. including the POS) is capable of producing a 22 kA current with a rise time of 5 ns, and of generating a power of more than 10 GW. Much of the work detailed in the thesis has already been presented in peer reviewed journals and at prestigious international conferences.
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Jiao, Yang. "High Power High Frequency 3-level NPC Power Conversion System." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/56653.
Full textAbstract:
The high penetration of renewable energy and the emerging concept of micro-grid system raises challenges to the high power conversion techniques. Multilevel converter plays the key role in such applications and is studied in detail in the dissertation.
The topologies and modulation techniques for multilevel converter are categorized at first by a thorough literature survey. The pros and cons for various multilevel topologies and modulation techniques are discussed. The 3-level neutral point clamped (NPC) topology is selected to build a 200kVA, 20 kHz power conversion system.
The modularized phase leg building block of the converter is carefully designed to achieve low loss and stress for high frequency and high power operation. The switching characteristics for all the commutation loops of 3-level phase leg are evaluated by double pulse tests. The switching performance is optimized for loss and stress tradeoff. A detailed loss model is built for system loss distribution and loss breakdown calculation. Loss and stress for the phase leg and 3-phase system are quantified at all power factors.
The space vector modulation (SVM) for 3-level NPC converter is investigated to achieve loss reduction, neutral voltage balance and noise reduction. The loss model and simulation model provides a quantitative analysis for loss and neutral voltage ripple tradeoff. An improved SVM method is proposed to reduce NP imbalance and switching loss simultaneously. This method also ensures an evenly distributed device loss in each phase leg and gives a constant system efficiency under different power factors.
Based on the improved modulation strategy, a new modulation scheme is then proposed with largely reduced conduction loss and switching stress. Moreover, the device loss and stress distribution on a phase leg is more even. This scheme also features on the simplified implementation. The improved switching characteristics for the proposed method are verified by double pulse tests. Also the system loss breakdown and the phase leg loss distribution analysis shows the loss reduction and redistribution result.
The harmonic filter for the grid interface converter is designed with LCL topology. A detailed inductor current ripple analysis derives the maximum inductor current ripple and the ripple distribution in a line cycle. The inverter side inductor is designed with the optimum loss and size trade-off. The grid side inductor is designed based on grid code attenuation requirement. Different damping circuits for LCL filter are evaluated in detail. The filter design is verified by both simulation and hardware experiment.
The average model for the 3-level NPC converter and its equivalent circuit is derived with the consideration of damping circuit in both ABC and d-q frame. The modeling and control loop design is verified by transfer function measurement on real hardware. The control loops design is also tested and verified on real hardware.
The interleaved DC/DC chopper is introduced at last. The different interleaving methods and their current ripple are analyzed in detail with the coupled and non-coupled inductor. An integrated coupled inductor based on 3-dimentional core structure is proposed to achieve high power density and provide both CM and DM impedance for the inductor current and output current.Ph. D.
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Jung, Chang won, Ming-jer Lee, Sunan Liu, G. P. Li, and Flaviis Franco De. "RECONFIGURABLE PATCH ANTENNA FOR FREQUENCY DIVERSITY WITH HIGH FREQUENCY RATIO (1.6:1)." International Foundation for Telemetering, 2005. http://hdl.handle.net/10150/605028.
Full textAbstract:
ITC/USA 2005 Conference Proceedings / The Forty-First Annual International Telemetering Conference and Technical Exhibition / October 24-27, 2005 / Riviera Hotel & Convention Center, Las Vegas, NevadaReconfigurable patch antenna integrated with RF mircoelectromechanical system (MEMS) switches is presented in this paper. The proposed antenna radiates circularly polarized wave at selectable dual frequencies (4.7 GHz and 7.5GHz) of high frequency ratio (1.6:1). The switches are incorporated into the diagonally-fed square patch for controlling the operation frequency, and a rectangular stub attached to the edge of the patch acts as the perturbation to produce the circular polarization. Gain of proposed antenna is 5 - 6dBi, and axial ratio satisfies 3dB criterion at both operating frequencies. The switches are monolithically integrated on quartz substrate. The antenna can be used in applications requiring frequency diversity of remarkable high frequency ratio.
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Duewer, Bruce Eliot. "A Low-Power, High Performance MEMS-based Switch Fabric." NCSU, 2001. http://www.lib.ncsu.edu/theses/available/etd-20011015-145122.
Full textAbstract:
DUEWER, BRUCE ELIOT. A Low-Power, High Performance MEMS-based Switch Fabric. (Under the direction of Paul D. Franzon.)An approach with the potential for building large low power high performance crossbar networks is presented. Thin film polysilicon MEMS devices are developed to provide crosspoints. These devices are vertically moving plates that serve as variable capacitors. Addressing of large arrays using 2n rather than n-squared lines despite no active circuitry on the MEMS chips is facilitated by bistable device operation. Derivations of equations for bistable device operation are presented. Low power operation is possible as the devices are electrostatically controlled and are stationary except during reconfiguration. Early devices are fabricated using the MUMPS process. The bistability and array addressability properties are demonstrated. The substrate effect on device operation is measured and modeled; methods for utilizing the substrate effect to tune device operation are presented. Later devices are fabricated using the SUMMiT process. Changes in the SUMMiT design rules to increase allowable vertical motion range are proposed and designs using them fabricated. S-parameter characteristics of devices in both `on' and `off' states are measured. Addition of metallization after chip fabrication and release is necessary to lower the resistance of interconnect. A self masking method for applying this metallization allowing for decreased resistance at line crossings is proposed. This method is tested using each of sputtering and evaporation as the deposition technique for a gold and adhesion layer stack. Effectiveness of the method with each technique is evaluated. Chips suitable for providing high voltage control for large MEMS arrays are fabricated in a 2um feature size CMOS process. Architectures suitable for building large crossbars employing variable capacitor arrays are discussed. Optimization of hybrid CMOS/MEMS Clos arrays on the basis of criteria other than minimization of crosspoints is discussed. Array sizings to provide 192*192 and 256*256 crossbars are presented, and software examples for sizing and controlling Clos networks are provided. Evaluation of the suitability of the MEMS devices developed for use as digital or broadband crosspoints is evaluated, and potential future directions are proposed.
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Abbasian, Sadegh. "Radio frequency switch mode power amplifiers and synchronous rectifiers for wireless applications." Thesis, University of British Columbia, 2015. http://hdl.handle.net/2429/55218.
Full textAbstract:
This thesis focuses on identifying and evaluating device, circuit, and system level issues that affect the power efficiency of class-D and class-F switch-mode amplifiers, and class-F synchronous rectifiers. The amplifier and rectifier circuits are used to implement pulse encoded switch-mode power amplifier systems. A detailed power efficiency analysis of current mode class-D amplifiers is presented for variable duty cycle pulse trains. A device model with current saturation in the switch is introduced and gives insight into how to select an appropriate load line for variable duty cycle switching conditions. Other new results include the effect of capacitive switching losses which are usually neglected in current mode amplifiers. The analytical results are compared with simulation results and confirm that the model can provide good predictions of power efficiency for a more general class of pulse encoded signals. Class-F amplifiers are also investigated in this work. The work investigates how input harmonic matching impedances at the gate affect amplifier power efficiency. Second harmonic matching is very important and desensitizes the circuit to nonlinear capacitances in the device. Third harmonic input terminations are much less significant. A comparison of voltage and current mode circuits is also made and the current mode is better in terms of maximizing power efficiency. The work is supported by experimental results. Class-F amplifier circuits are reconfigured into synchronous rectifiers using the theory of time-reversal duality. Time-reversal duality is usually applied in the context of lossless circuits and a discussion of how loss impacts the circuit duals is presented. The rectifier dual always has slightly higher power efficiency and insights into why this occurs are described. Experimental results are shown for voltage and current mode class-F rectifiers as well as a wideband current mode class-F rectifier. The thesis concludes with the analysis and experimental results for an energy recycling switch-mode power amplifier. A signal splitting network is implemented at the output of the amplifier and out-of-band power is rectified to enhance the power efficiency of the amplifier. Experimental results confirm that energy recycling can increase power efficiency. Concluding remarks based on this research are summarized in the context of how best to use these circuits for implementing high efficiency amplifiers and rectifiers for wireless applications.Applied Science, Faculty of
Engineering, School of (Okanagan)
Graduate
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Majid, Abdul. "Analysis and implementation of switch mode power supplies in MHz frequency region." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-16691.
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Ali, Sheikh Nijam. "A new radio frequency switch-mode power amplifier concept for wireless applications." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/43065.
Full textAbstract:
Although RF switch-mode power amplifiers (SMPAs) are theoretically attractive with the potential to achieve very high power efficiencies, experimental realizations at high frequencies have yet to yield significantly better efficiency than conventional analog technology. Most SMPA designs are based on class D or class S circuits, and in these circuits, power efficiency is significantly reduced when the switching signal is changed from periodic to non-periodic. In this work, a new SMPA architecture is proposed. Instead of employing reflective out-of-band matching conditions used in class D/S circuits, the switch is matched to a broadband load which creates dissipative out-of-band impedances. The broadband load significantly improves switching conditions especially for non-periodic signals. The broadband load is implemented as a complementary diplexer which separates in-band and out-of-band signal power at the output of the SMPA. An energy recovery
loop using out-of-band signal power is proposed to significantly reduce the sensitivity of the overall power efficiency to changes in the peak to average power ratio of the source signal. Experimental and simulation results are shown for the new SMPA architecture.
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Pusino, Vincenzo. "High power, high frequency mode-locked semiconductor lasers." Thesis, University of Glasgow, 2014. http://theses.gla.ac.uk/5174/.
Full textAbstract:
Integrated mode-locked laser diodes are effective sources of periodic sequences of optical pulses, which have always been of great interest for a range of spectroscopy, imaging and optical communications applications. However, some disadvantages prevent their widespread use, such as the restricted tuning of their repetition rate and their output power levels never exceeding a few mW. This thesis reports on the work done to address those limitations. Two main findings are presented, the first being the generation of ultra-high repetition rate optical signals through external injection of two continuous wave signals. This mechanism is much simpler than other techniques previously proposed to increase the repetition rate of monolithic modelocked laser, and has proved successful in generating optical signals up to quasi-THz. It is based on injection of two continuous wave signals whose spacing is an integer multiple of the pulsed cavity free spectral range and whose injection wavelengths coincide with two of the monolithic laser modes. This technique allows discrete tunability of the repetition rate with a step equal to the injected cavity free spectral range, and the injected laser has been shown to lock up to a repetition rate of 936 GHz, corresponding to 26 times that of the free-running semiconductor laser (36 GHz). The presented scheme is suitable for integration, opening the way for a successful on-chip generation of ultra-high repetition rate optical signals exploiting coupled cavity phenomena. The second main finding of this thesis regards the changes induced on the pulsed operation of monolithic passively mode-locked lasers by a blue bandgap detuning applied to their saturable absorber. The quantum well intermixing technique has been used for attaining an area-selective bandgap shift on the fabricated chip, being fully postgrowth. The lasers with a detuned absorber were found to have an extended range of gain section currents and absorber voltages in which stable mode-locking operation took place. Furthermore, a comparison of mode-locked devices fabricated on the same chip, respectively with and without a bandgap detuned absorber, showed that the emitted pulses had greater peak power and were less affected by optical chirp when the bandgap of the absorbing section was shifted. A new intermixing technique has also been developed as part of this work to address some inconsistencies of the pre-existing one; the newly introduced approach has been found to provide better spatial resolution and a more precise control of the attained bandgap shift.
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Davari, Pooya. "High frequency high power converters for industrial applications." Thesis, Queensland University of Technology, 2013. https://eprints.qut.edu.au/62896/1/Pooya_Davari_Thesis.pdf.
Full textAbstract:
The main contribution of this project was to investigate power electronics technology in designing and developing high frequency high power converters for industrial applications. Therefore, the research was conducted at two levels; first at system level which mainly encapsulated the circuit topology and control scheme and second at application level which involves with real-world applications. Pursuing these objectives, varied topologies have been developed and proposed within this research. The main aim was to resolving solid-state switches limited power rating and operating speed while increasing the system flexibility considering the application characteristics. The developed new power converter configurations were applied to pulsed power and high power ultrasound applications for experimental validation.
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Leedham, Robert John. "High frequency switching with power MOSFETs." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627468.
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Petkov, Roumen Dimitrov. "High power switched mode magnetron power supply systems for industrial microwave heating applications." Thesis, Teesside University, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259645.
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Wang, Hongfang. "Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters." Diss., Virginia Tech, 2007. http://hdl.handle.net/10919/27517.
Full textAbstract:
The next generation of power converters not only must meet the characteristics demanded by the load, but also has to meet some specific requirements like limited space and high ambient temperature etc. This needs the power converter to achieve high power density and high temperature operation. It is usually required that the active power devices operate at higher switching frequencies to shrink the passive components volume.
The power semiconductor devices for high frequency high density power converter applications have been investigated. Firstly, the methodology is developed to evaluate the power semiconductor devices for high power density applications. The power density figure of merit (PDFOM) for power MOSFET and IGBT are derived from the junction temperature rise, power loss and package points of view. The device matrices are generated for device comparison and selection to show how to use the PDFOM. A calculation example is given to validate the PDFOM. Several semiconductor material figures of merit are also proposed. The wide bandgap materials based power devices benefits for power density are explored compared to the silicon material power devices.
Secondly, the high temperature operation characteristics of power semiconductor devices have been presented that benefit the power density. The electrical characteristics and thermal stabilities are tested and analyzed, which include the avalanche breakdown voltage, leakage current variation with junction temperature rise. To study the thermal stability of power device, the closed loop thermal system and stability criteria are developed and analyzed. From the developed thermal stability criterion, the maximum switching frequency can be derived for the converter system design. The developed thermal system analysis approach can be extended to other Si devices or wide bandgap devices. To fully and safely utilize the power devices the junction temperature prediction approach is developed and implemented in the system test, which considers the parasitic components inside the power MOSFET module when the power MOSFET module switches at hundreds of kHz. Also the thermal stability for pulse power application characteristics is studied further to predict how the high junction temperature operation affects the power density improvement.
Thirdly, to develop high frequency high power devices for high power high density converter design, the basic approaches are paralleling low current rating power MOSFETs or series low voltage rating IGBTs to achieve high frequency high power output, because power MOSFETs and low voltage IGBTs can operate at high switching frequency and have better thermal handling capability. However the current sharing issues caused by transconductance, threshold voltage and miller capacitance mismatch during conduction and switching transient states may generate higher power losses, which need to be analyzed further. A current sharing control approach from the gate side is developed. The experimental results indicate that the power MOSFETs can be paralleled with proper gate driver design and accordingly the switching losses are reduced to some extent, which is very useful for the switching loss dominated high power density converter design.
The gate driving design is also important for the power MOSFET module with parallel dice inside thus increased input capacitance. This results in the higher gate driver power loss when the traditional resistive gate driver is implemented. Therefore the advanced self-power resonant gate driver is investigated and implemented. The low gate driver loss results in the development of the self-power unit that takes the power from the power bus. The overall volume of the gate driver can be minimized thus the power density is improved.
Next, power semiconductor device series-connection operation is often used in the high power density converter to meet the high voltage output such as high power density boost converter. The static and dynamic voltage balancing between series-connected IGBTs is achieved using a hybrid approach of an active clamp circuit and an active gate control. A Scalable Power Semiconductor Switch (SPSS) based on series-IGBTs is developed with built-in power supply and a single optical control terminal. An integrated package with a common baseplate is used to achieve a better thermal characteristic. These design features allow the SPSS unit to function as a single optically controlled three-terminal switching device for users. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. The SPSS is a useful power switch concept for building high power density, high switching frequency and high voltage functions that are beyond the capability of individual power devices.
As conclusions, in this dissertation, the above-mentioned issues and approaches to develop high density power converter from power semiconductor devices standpoint are explored, particularly with regards to high frequency high temperature operation. To realize such power switches the related current sharing, voltage balance and gate driving techniques are developed. The power density potential improvements are investigated based on the real high density power converter design. The power semiconductor devices effects on power density are investigated from the power device figure of merit, high frequency high temperature operation and device parallel operation points of view.Ph. D.
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Rahaman, Hasibur. "Investigation of a high-power, high-pressure spark gap switch with high repetition rate." [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=985501057.
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Gunda, Rahul. "Performance analysis of high power photoconductive switch at elevated temperature." Diss., Columbia, Mo. : University of Missouri-Columbia, 2005. http://hdl.handle.net/10355/4310.
Full textAbstract:
Thesis (M.S.)--University of Missouri-Columbia, 2005.The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (July 13, 2006) Includes bibliographical references.
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LEGGIERI, ALBERTO. "High power sources and innovations for high frequency electronics." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2014. http://hdl.handle.net/2108/202459.
Full textAbstract:
This study would propose the development of innovative devices, in vacuum electronics field for high energy and high frequency applications. Design strategies for the improvement of electron devices are proposed in order to reduce size and increase efficiency of these devices, in particular referring to high power sources. As for high power sources, vacuum tube oscillators capable to generate simple sinusoidal signals or more complex signals are intended. In order to increase efficiency and frequency range of vacuum tubes, a new design approach for the development electron sources is proposed. New strategies for designing vacuum tube connection interfaces, such as dielectric windows and power couplers, are shown. Numerical complex design techniques, involving multiple physical influencing factors, are described in order to improve the behavior of Magnetron and Klystrons under operative conditions. Finally, a research on high power microwave production, led to the study of virtual cathode oscillation phenomena. A small size power source which would allow solving many problems of space has been individuated by investigating on the phenomena of high power microwave generation. It has been found as a great candidate, since it does not require containment fields. Devices that use this principle are called VIRCATOR. Old technologies have been rediscovered and implemented with the introduction of new analytical formulations and development of numerical models through the most modern devices computational analysis coming to conceive complex virtual prototypes.
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Li, Wei Ph D. Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science. "Very-high-frequency low-voltage power delivery." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/82352.
Full textAbstract:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.Cataloged from PDF version of thesis.
Includes bibliographical references (p. 217-223).
Power conversion for the myriad low-voltage electronic circuits in use today, including portable electronic devices, digital electronics, sensors and communication circuits, is becoming increasingly challenging due to the desire for lower voltages, higher conversion ratios and higher bandwidth. Future computation systems also pose a major challenge in energy delivery that is difficult to meet with existing devices and design strategies. To reduce interconnect bottlenecks and enable more flexible energy utilization, it is desired to deliver power across interconnects at high voltage and low current with on- or over-die transformation to low voltage and high current, while providing localized voltage regulation in numerous zones. This thesis introduces elements for hybrid GaN-Si dc-de power converters operating at very high frequencies (VHF, 30-300 MHz) for low-voltage applications. Contributions include development of a new VHF frequency multiplier inverter suitable for step-down power conversion, and a Si CMOS switched-capacitor step-down rectifier. These are applied to develop a prototype GaN-Si hybrid dc-dc converter operating at 50 MHz. Additionally, this thesis exploits these elements to propose an ac power delivery architecture for low-voltage electronics in which power is delivered across the interconnect to the load at VHF ac, with local on-die transformation and rectification to dc. With the proposed technologies and emerging passives, it is predicted that the ac power delivery system can achieve over 90 % efficiency with greater than 1 W/mm² power density and 5:1 voltage conversion ratio. A prototype system has been designed and fabricated using a TSMC 0.25 [mu]m CMOS process to validate the concept. It operates at 50 MHz with output power of 4 W. The prototype converter has 8:1 voltage conversion ratio with input voltage of 20 V and output voltage of 2.5 V. To the author's best knowledge, this is the first ac power delivery architecture for low-voltage electronics ever built and tested.
by Wei Li.
Ph.D.
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Martin, Kevin Ian. "High power, diode pumped, single frequency lasers." Thesis, University of Southampton, 1996. https://eprints.soton.ac.uk/396626/.
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This thesis presents experimental and theoretical work on the development of high power (i.e. multi-Watt) single frequency lasers, with the main emphasis on using intra-cavity second harmonic generation to produce high power visible output. With such a laser, pumped by a beam shaped 20W diode bar, we have obtained over 3W of TEM00 single frequency output at 532nm. Because of the strong non-linear effects introduced into the resonator cavity by the frequency doubler, the behaviour of the laser can be significantly altered. In particular, there is the previously unreported phenomenon of mode-hopping suppression, where the non lasing modes are suppressed by the nonlinear loss (due to sum-frequency generation with the lasing mode). This allows the lasing mode to be smoothly tuned over many mode spacings simply by scanning the cavity length. Tuning ranges of up to 80GHz have been measured, and are in good agreement with theoretical calculations. There are also some less desirable consequences of the high nonlinear loss, such as parasitic lasing, self misalignment, and bidirectional lasing, that have had to be overcome in order to achieve efficient operation. Ring lasers can provide, arguably, the most robust and stable single frequency operation. However care must be taken in their design to minimise spatial hole burning. Even a small amount of residual spatial hole burning can cause multi-frequency operation in ring lasers. This thesis contains experimental measurements of spatial hole burning and compares these with a numerically calculated theory. Also, the technique of pump beam displacement to increase the single frequency performance of end-pumped ring lasers, suffering from residual spatial hole burning, is described. Thermal effects, such as thermal lensing and thermally induced birefringence often prove to be a major limiting factor in efficient operation of high power lasers. However these effects are dependent on several factors, such as the resonator design, and the heat sinking of the laser rod. Described in this thesis are the steps we have taken to minimize these effects in the designs of the high power lasers we have constructed.
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Tabisz, Wojciech Antoni. "High-frequency multi-resonant power conversion techniques." Diss., Virginia Tech, 1990. http://hdl.handle.net/10919/37404.
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Biglarbegian, Mehrdad. "High Frequency GaN Power Converters Digital Twin." Thesis, The University of North Carolina at Charlotte, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10979304.
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There is a need for a foundation of a research study aimed at investigations on near real-time reliability awareness of Gallium Nitride devices in high-frequency power converters for which we need advanced hardware and algorithms. This dissertation is moving beyond traditional reliability analysis and looking to more applicable and accurate analytical tools by introducing deep learning techniques and advanced sensing solutions. The computational structures will be applied at the edge of the power converter through online sensing and data processing units as well as on a remote server. They will provide an iterative ability to predict the time until the device may fail or reach a pre-defined degradation threshold.
With the availability of the most granular information deduced from advanced devices, a new data-driven scheme is proposed for system monitoring and possible lifetime extension Gallium Nitride power converters. The approach relies on the real-time on-resistance data extraction from the power converter, and calibration of an adaptive model using multi-physics co-simulations under power cycling. More specifically, the focus is on deploying machine learning algorithms to exploit for the parameter estimation in power electronics engineering reliability. The proposed techniques in this work are quite new and have not yet been developed and analyzed for high-frequency power converters specifically with Gallium Nitride power semiconductor devices.
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Shen, Wei. "Design of High-density Transformers for High-frequency High-power Converters." Diss., Virginia Tech, 2006. http://hdl.handle.net/10919/28280.
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Moore's Law has been used to describe and predict the blossom of IC industries, so increasing the data density is clearly the ultimate goal of all technological development. If the power density of power electronics converters can be analogized to the data density of IC's, then power density is a critical indicator and inherent driving force to the development of power electronics. Increasing the power density while reducing or keeping the cost would allow power electronics to be used in more applications.
One of the design challenges of the high-density power converter design is to have high-density magnetic components which are usually the most bulky parts in a converter. Increasing the switching frequency to shrink the passive component size is the biggest contribution towards increasing power density. However, two factors, losses and parasitics, loom and compromise the effect. Losses of high-frequency magnetic components are complicated due to the eddy current effect in magnetic cores and copper windings. Parasitics of magnetic components, including leakage inductances and winding capacitances, can significantly change converter behavior. Therefore, modeling loss and parasitic mechanism and control them for certain design are major challenges and need to be explored extensively.
In this dissertation, the abovementioned issues of high-frequency transformers are explored, particularly in regards to high-power converter applications. Loss calculations accommodating resonant operating waveform and Litz wire windings are explored. Leakage inductance modeling for large-number-of-stand Litz wire windings is proposed. The optimal design procedure based on the models is developed.Ph. D.
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Li, Jie. "High frequency power transformer modelling for frequency response analysis (FRA) diagnosis." Thesis, University of Manchester, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.538489.
Full textAbstract:
Transformer fault diagnosis through Frequency Response Analysis (FRA) has been receiving a great deal of attention in recent years. As a comparative technique, FRA has good capability and sensitivity in detecting mechanical faults that are difficult to identify by conventional condition assessment techniques. Power transformers are among the most expensive equipment owned by electric utilities, and it is not reasonable to produce deformation on actual transformers and carry out measurement sensitivity studies. On the other hand, simulation models, which can accurately reproduce transformer high frequency behaviours, are flexible tools for performing FRA deformation type sensitivity studies for deriving FRA interpretation rules. The main objective of this thesis is to develop appropriate simulation models for use in FRA diagnosis and to improve the interpretation of FRA responses through simulation studies. The transformer models developed at the University of Manchester (then UMIST) were by far the best representation of state-of-art modelling techniques; the inductance and the capacitance of the basic model unit were calculated using winding geometry and material properties, the frequency dependent conductive and dielectric losses were also included. In addition, mutual capacitive and inductive couplings between units were carefully considered to ensure the accuracy of the model. However, there is still some room for improvement on these models and during this PhD research, major contributions are made on as. follows: firstly take core effect into consideration to reproduce valid FRA characteristic representation in the low frequencies, secondly status of network terminal nodes are uniformed represented by externally connecting an impedance so that during FRA deformation sensitivity study, it is flexible to change the terminal condition, thirdly reconfigure the network node and unit relationship so that tap winding connection are precisely represented as the design, finally convert the single-phase model to a three-phase model and by developing a reduced matrix model, keep the simulation accuracy intact for a three-phase transformer up to 2 MHz, at the same time reduce computational time significantly. In detail, this PhD thesis describes the following three parts of my research: Firstly a transformer model incorporating a magnetic core based on the Principle of Duality is established to interpret low frequency characteristics of FRA responses (from 10Hz to up to 1 kHz). This model includes leakage inductances and capacitances of windings and can explain FRA low frequency differences caused by asymmetry of magnetic paths in three-limb and five-limb core transformers. Secondly, FRA characteristics were studied systematically using a component-system approach through building models for single windings, a one-phase winding set and finally the three-phase transformer. In this way the effects of winding structure, inductive and capacitive coupling among windings, among phases and terminal connection effect on FRA characteristics were studied. FinaUya complete three-phase transformer reduced matrix model is built, that can flexibly represent winding terminal connection and precisely describe tap positions. Using this modelling strategy, transmission power transformers at 2751132 kVand 275/33 kV voltage levels are simulated and numerous deformation sensitivity studies are performed, in order to gain better understanding on their FRA characteristics and to identify FRA features of different winding deformation types on these transformers. The research indicates that the overall approach used to develop these simulation models has helped in improving interpretation of FRA responses. The transformer modelling techniques being developed, with further refinement, can be a useful tool for FRA diagnosis and benefit the test engineers from the industry.
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Kelkar, Kapil S. "Silicon carbide as a photoconductive switch material for high power applications." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4469.
Full textAbstract:
Thesis (Ph. D.) University of Missouri-Columbia, 2006.The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 3, 2007) Includes bibliographical references.
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Xue, Jing. "Single-phase vs. Three-phase High Power High Frequency Transformers." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/32919.
Full textAbstract:
This thesis proposes one comparison methodology for single and three-phase high power high frequency transformers in power conversion systems. The objective is to compare the volume of the transformers. And single and three-phase Dual Active Bridge Converter (DAB1 and DAB3) topologies with single and three-phase isolating transformers are selected for the transformer comparison. Design optimization of power transformer has been studied and simplified models have been built for the single and three-phase transformer design optimization in this work, including assumptions for core shapes, materials, winding structures and thermal model. Two design methods have been proposed according to different design constraints, named T â B Method and J â B Method separately. T â B Method is based on feature of the core, which has the major limits of maximum flux density and temperature rise. The flux density should not reach the saturation value of the core, and temperature rise should meet specifications in different applications to assure the performance of the core (permeability, saturation flux density, and core loss) and the insulation of the wire. And J â B Method starts from the comparison of area product in conventional design method. The relationship between area product of transformer cores and the flux and current of the transformer in design is analyzed. There is specified relationship between area product of single and three-phase transformers if flux and current densities are specified for both. Thus J â B Method is proposed with the design constraints of specified current and flux density. Both design methods include both single and three-phase transformer design.
One example case for single and three-phase transformer comparison is selected as high power high frequency DAB conversion system. Operation principles are studied for both DAB1 and DAB3 based on previous work. And transformer design based on the T â B and J â B Methods are carried out and transformer volumes are compared. And results show that three-phase transformer has little benefit in volume or thermal than single-phase transformer, when they are utilized in single-phase DAB and three-phase DAB converters separately. Scaled-down single and three-phase DAB systems have been built and volume and thermal tests have been carried out.Master of Science
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Wojda, Rafal P. "Winding Resistance and Winding Power Loss of High-Frequency Power Inductors." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1345746593.
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Imdad, Kashif. "High frequency modeling of power transformers under transients." Doctoral thesis, Universitat Politècnica de Catalunya, 2017. http://hdl.handle.net/10803/457774.
Full textAbstract:
This thesis presents the results related to high frequency modeling of power transformers. First, a 25kVA distribution transformer under lightning surges is tested in the laboratory and its high frequency model is proposed. The transfer function method is used to estimate its parameters. In the second part, an advanced high frequency model of a distribution transformer is introduced. In this research, the dual resonant frequency distribution transformer model introduced by Sabiha and the single resonant frequency distribution transformer model under lightning proposed by Piantini at unloaded conditions are investigated and a modified model is proposed that is capable to work on both single and dual resonant frequencies. The simulated results of the model are validated with the results of Sabiha and Piantini that have been taken as reference. Simulations have shown that the results of the modified model such as, secondary effective transfer voltages, transferred impedances and transformer loading agree well with the previous models in both time and frequency domains.
The obtained objectives of this research are:
* Methodology for determining the parameters of a power transformer.
* High frequency modeling of a transformer in order to simulate its transient behavior under surges.
* Modification of high frequency model for single and dual resonance frequency.
The originality and methodology of this research are:
* High frequency transformer model is derived by means of the transfer function method. In the literature, the transfer function method has been used in many applications such as the determination of the mechanical deformations or insulation failure of interturn windings of transformers. In this thesis, the parameters of the proposed model are estimated using the transfer function method.
* Modification of high frequency model for single/dual resonance frequency using the transfer function method. The transfer function can also be used to determine the state of the transformer. The modification in the developed model using the proposed technique has been validated.
The high frequency transformer model was presented by Sabiha at two resonance frequency under both condition loading and unloading was used as reference model for modification and further enhancement. A transformer with 25kVA capacity was tested in UPC Terrassa Spain in High voltage lab under the effect of impulse voltage and the digital data was stored via oscilloscope in computer. An algorithm was developed to estimate the transformer parameters by transfer function method using fast Fourier transform analysis. In this scheme the two port network theory concept was taken for black box analysis of transformer. The series of transient¿s frequencies of experimental digital data was noted. The transformer parameters such as Z11, Z12, Z21, and Z22 calculated on all these frequencies in order to generate a narrow band of correct frequency at which the transients was developed experimentally and therefore it has to be developed on that specific frequencies. Earlier the transfer function method was used for the mechanical deformation analysis in the transformer, now similar method of modeling used to estimate the parameters of transformer and propose accurate transformer model for two resonance frequencies only and the parameters estimation was based simply placing RLC elements. The proposed model also tested and validated for accuracy and reliability.
In the second phase of research high frequency models of transformer for protection from the transients based on experimental data are presented. Which were tested and validated for unloading and loading for Single and Two resonant frequencies, and modeled using transfer function method. The proposed single model leads to others two models which are verified by two port network theory, unloaded transfer under time domain and frequency domain analysis, transformer loading under different loads and transfer functionEsta tesis presenta los resultados relacionados con el modelado en alta frecuencia de transformadores de potencia. Primero, un transformador de distribución de 25 kVA es ensayado a perturbaciones tipo rayo y se propone un modelo de alta frecuencia. El método de la función de transferencia es utilizado para estimar sus parámetros. En segundo lugar, se introduce un modelo avanzado de alta frecuencia. El modelo resulta de la investigación y modificación de los modelos de resonancia dual introducido por Sabiha y el de resonancia única introducido por Piantini con condiciones sin carga. El modelo propuesto es capaz de representar tanto la resonancia única como dual. El modelo es validado a partir de los resultados de referencia de Sabiha y Piantini. Los resultados de simulación indican que el modelo representa las sobretensiones transferidas al secundario, las impedancias de transferencia y el trabajo en carga del transformados coinciden con los modelos anteriores tanto en el dominio temporal y de la frecuencia. Los objetivos obtenidos en esta tesis son: * Metodología para determinar los parámetros de un transformador de potencia. * Modelo de alta frecuencia para simular el comportamiento transitorio frente a perturbaciones. * Modificación del modelo de alta frecuencia para representar una y dos resonancias. La originalidad y metodología de la tesis son: * El modelo de alta frecuencia del transformador ha sido obtenido a partir de la metodología de la función de transferencia. En la literatura, esta metodología ha sido usada en muchas aplicaciones como en la determinación de deformaciones mecánicas o fallo de aislamiento en espiras de transformadores. En esta tesis, los parámetros del modelo propuesto son obtenidos mediante esta metodología. * Modificación del modelo de alta frecuencia con resonancia única o dual utilizando el método de la función de transferencia. La metodología propuesta puede ser utilizada para determinar el estado del transformador. Sabiha propuso un modelo de alta frecuencia representado dos resonancias en condiciones de carga y de vacío. Este modelo ha sido utilizado como referencia para la modificación y mejora. En la tesis, el transformador de distribución 25 kVA disponible en el Departamento de Ingeniería Eléctrica de la UPC en la ESEIAAT ha sido ensayado a impulsos tipo rayo. Un algoritmo ha sido desarrollado para estimar los parámetros del transformador mediante el método de la función de transferencia utilizando la transformada de Fourier. En este esquema, una red de dos puertos ha sido adoptada para el análisis del transformador. Los parámetros del transformador como la Z11, Z12., Z21 y Z22 son calculadas para representar las frecuencias consideradas. Mediante el método de la función de transferencia los parámetros del transformador son determinados. El modelo propuesto se basa en elementos simples RLC capaces de representar con precisión dos frecuencias de resonancia. En la segunda parte de la tesis, un nuevo modelo es introducido capaz de representar ambos modelos de resonancia única y dual en uno solo. Se analiza el caso de carga y vacío.
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Naredo, V. José Luis A. "Communication frequency response of high voltage power lines." Thesis, University of British Columbia, 1987. http://hdl.handle.net/2429/26725.
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Several methods for calculating the electrical phase and modal parameters of overhead transmission lines are described in this thesis; then, a graphical method for evaluating communication frequency response of delta transmission lines -based on the guidelines given by W. H. Senn [12,13,14]- is developed. The graphical method, combined with the parameters calculation methods, obviates the need of large mainframe computers for the analysis of power line carrier (PLC) systems.
A new technique for assessing coupling alternatives, based on Senn's method, is developed. The technique is applied to generate coupling recommendations; it is found that many of the current recommendations given elsewhere [21] are not reliable.
Finally, future work to be done in this field is proposed.Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
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Lawson, James. "High frequency electromagnetic links for wireless power transfer." Thesis, Imperial College London, 2017. http://hdl.handle.net/10044/1/54841.
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This thesis investigates inductive links used in wireless power transfer systems. Inductive power transfer can be used as a power delivery method for a variety of portable devices, from medical implants to electric vehicles and is gaining increased interest. The focus is on high quality factor coils and MHz operation, where accurate measurements are difficult to achieve. Fast models of all pertinent aspects of inductive power transfer systems for constant cross section coils are developed. These models are used to optimise a new coil winding pattern that aims to increase efficiency in volume constrained scenarios. Measurement systems are developed to measure coil Q factors in excess of 1,000. The prototype measurement systems are verified against models of that system, as well as finite element simulations of the coil under test. Shielding of inductive power transfer systems is then investigated. A structure typically used at GHz frequencies, the artificial magnetic conductor, is miniaturised as an alternative to conventional ferrite backed ground plane shielding. Finite element simulation shows this structure significantly improves link efficiency. The artificial magnetic conductor prototype does not result in a gain in efficiency expected, however it does display the properties expected of an artificial magnetic conductor, including increased coupling factor. Finally, an unconventional inductive power transfer system is presented where transmitter and receiver are up to 6m away from each other and of radically different size. This system provides mW level power to remote devices in a room, for example thermostats or e-ink displays. Conventional approaches to design do not consider the distortion of the magnetic field caused by metallic objects in the room. It was found that treating the system as a decoupled receiver and transmitter provides a better prediction of received power in real world environments.
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Augla, Kader Hmood. "Losses in high frequency power inductors and transformers." Thesis, University of Bath, 1985. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.354726.
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This thesis is concerned with some aspects of losses produced in the inductors and transformers of switched-mode power supplies (SMPS). The main subject of study is the eddy-current losses due to non-uniform current distribution across foil windings. These are calculated and measured for the cases when the foil constitutes an air-cored inductor, and when it is used as the secondary of a ferrite cored transformer. A coupled circuit model is used in which the foil inductor is subdivided into sets of mutually coupled filament coils. A formal method of solution of the resulting sets of equations is presented, and alternative mathematical methods of calculating self and mutual inductances are also compared. In addition to this work two other topics are addressed briefly. First, the magnetic fields in and around magnetic cores are measured, and compared with computed results using a 3D magnetostatic package, TOSCA. Secondly, core losses in ferrite cores due to sinusoidal and non-sinusoidal excitation are measured and calculated.
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Lim, Seungbum. "High frequency power conversion architecture for grid interface." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/106083.
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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.Cataloged from PDF version of thesis.
Includes bibliographical references (pages 145-151).
With the present ac-voltage distribution system, ac-dc converters are key components for driving many dc voltage applications from the ac grid voltage. There are a lot of electronic devices that natively operate from the dc voltage including light emitting diodes (LEDs), personal and laptop computers, and smart phones; for all of them there is a drive to increase functionality and to reduce the volume at the same time. The desire for further miniaturization is, however, facing a dominant obstacle strained by the performance requirements on power electronic circuits. In this thesis, a design technique for high-performance ac-dc power converters will be presented. A new grid interface ac-dc conversion architecture and associated circuit implementations are proposed along with novel control methods. This approach simultaneously address design challenges associated with high performance (e.g., high efficiency, high power factor, miniaturization, and high reliability/lifetime) of ac-dc power conversion systems. The proposed architecture is suitable for realizing ac-dc converters that switch in the HF range (3-30 MHz) with relatively low-voltage components and with zero-voltage switching (ZVS) conditions, enabling significant converter size reduction while maintaining high efficiency. Moreover, the proposed approach can achieve reasonably high power factor about 0.9, while dynamically buffering twice-line frequency energy using small capacitors operating with large voltage swings over the ac line voltage cycle. The ac-dc converter design shows that excellent combinations of power density, efficiency, and power factor can be realized with this approach.
by Seungbum Lim.
Ph. D.
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Scahill, Charlanne Mary. "Design of high power, single frequency semiconductor lasers." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624851.
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Farrington, Richard W. "Novel concepts in high-frequency resonant power processing." Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-05222007-091356/.
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Ronkainen, T. (Tarmo). "Interference analysis of high frequency power line communications." Master's thesis, University of Oulu, 2019. http://jultika.oulu.fi/Record/nbnfioulu-201906072488.
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Abstract. In power line communications, the existing in-house or in-office power distribution network can be used as a communications channel. Current broadband power line communication systems in the market deploy frequency range up to 86 MHz with transmission speeds up to 1 Gb/s. To increase the capacity even further, an extension of the frequency range above 100 MHz has been proposed in the published literature. This thesis presents an empirical study of radiated interference of high frequency broadband power line communications. Utilization of high frequencies for power line communications will cause unwanted radio interference which needs to be treated with caution. The preliminary results obtained in this work show how the components and structures of a power grid segment will contribute to the overall interference radiation when frequencies above 100 MHz are used for power line communication. The results indicate that the peak levels of radiated interference from a typical cabling in in-house or in-office power line networks reach their maximum on frequencies near 300 MHz and remain on a relatively same level on above. The peak levels are approximately 13 dB above the EN 55022 limit in the 230–1000 MHz frequency range with an injected power spectral density of -80 dBm/Hz. The results will provide valuable information when designing and making more comprehensive measurement campaigns for deciding on the national transmission levels for power line communications in UHF and higher frequencies.Korkeataajuisen sähköverkkotiedonsiirron aiheuttama säteily. Tiivistelmä. Sähköverkkotiedonsiirrossa hyödynnetään olemassa olevaa sähköverkkoa tiedonsiirtokanavana. Tällä hetkellä käytössä olevat sähköverkkotiedonsiirron standardit käyttävät taajuuksia 86 MHz:iin asti. Saavutettavat tiedonsiirtonopeudet yltävät 1 Gb/s asti. Kapasiteetin kasvattamiseksi on julkaistussa kirjallisuudessa esitetty taajuusalueen laajentamista yli 100 MHz:n taajuuksille. Tässä diplomityössä esitetään empiirinen tutkimus korkeataajuisen sähköverkkotiedonsiirron aiheuttamasta säteilystä. Korkeiden taajuuksien käyttö sähköverkkotiedonsiirrossa aiheuttaa haitallista säteilyä, joka täytyy ottaa huomioon ennen kuin taajuusaluetta voidaan laajentaa. Työssä saavutetut tulokset osoittavat kuinka sähköverkon eri komponentit vaikuttavat kokonaissäteilyyn kun yli 100 MHz:n taajuuksia käytetään sähköverkkotiedonsiirrossa. Tulokset osoittavat että tyypillisen talon tai toimistorakennuksen sähköverkossa siirretyn korkeataajuisien signaalin vuotama säteily saavuttaa maksimitasonsa 300 MHz:n taajuuteen mennessä ja ei kasva sitä korkeammilla taajuuksilla. Säteilyn maksimitasot ovat noin 13 dB EN55022 standardin rajojen yläpuolella taajuuksilla 230–1000 MHz kun sähköverkkoon syötetyn signaalin tehollinen tehotiheys on -80 dBm/Hz. Tuloksia voidaan käyttää hyödyksi laajempia mittauskampanjoita suoritettaessa kansallisten tehorajoitusten päättämiseksi kun UHF ja sitä korkeampia taajuuksia käytetään sähköverkkotiedonsiirrossa.
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Cliffe, Robert J. "High power high frequency DC-DC converter topologies for use in off-line power supplies." Thesis, Loughborough University, 1996. https://dspace.lboro.ac.uk/2134/7305.
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The development of a DC-DC converter for use in a proposed range of one to ten kilowatt off-line power supplies is presented. The converter makes good use of established design practices and recent technical advances. The thesis begins with a review of traditional design practices, which are used in the design of a 3kW, 48V output DC-DC converter, as a bench-mark for evaluation of recent technical advances. Advances evaluated include new converter circuits, control techniques, components, and magnetic component designs. Converter circuits using zero voltage switching (ZVS) transitions offer significant advantages for this application. Of the published converters which have ZVS transitions the phase shift controlled full bridge converter is the most suitable, and assessments of variations on this circuit are presented. During the course of the research it was realised that the ZVS range of one leg of the phase shift controlled full bridge converter could be extended by altering the switching pattern, and this new switching pattern is proposed. A detailed analysis of phase shift controlled full bridge converter operation uncovers a number of operational findings which give a better and more complete understanding of converter operation than hitherto published. Converter design equations and guidelines are presented and the effects of the new improvement are investigated by an approximate analysis. Computer simulations using PSPICE2 are carried out to predict converter performance. A prototype converter design, construction details and test results are given. The results obtained compare well to the predicted performance and confirm the advantages of the new switching pattern.