Relevant bibliographies by topics / High frequency power switch

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'High frequency power switch'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "High frequency power switch"

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Santos Almeida, Pedro, Guilherme Márcio Soares, and Henrique Antônio Carvalho Braga. "A novel single-switch high power factor LED driver topology with high-frequency PWM dimming capability." Eletrônica de Potência 18, no. 1 (February 1, 2013): 855–63. http://dx.doi.org/10.18618/rep.2013.1.855863.

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Jiang, Qiang. "The Design of 25KV High-Frequency High-Voltage Power Supply." Advanced Materials Research 912-914 (April 2014): 927–30. http://dx.doi.org/10.4028/www.scientific.net/amr.912-914.927.

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In this paper, a HV and HF switch power supply was designed, which was controlled through a single chip microcomputer, also the MOSFET was used as the switch power tube. The PWM (pulse width modulation) technique and half-bridge inverter topology have been used to invert AC into the DC that can be adjust from 0V~25KV and the operating frequency is 35KHz, Through the simulation with the Saber software and practical use, the feasibility of the scheme and the correctness of the design have been verified.
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Kao, Hsuan-Ling. "On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology." Electronics 10, no. 23 (November 25, 2021): 2928. http://dx.doi.org/10.3390/electronics10232928.

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This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.
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Liu, Bai Fen, and Ying Gao. "Design of a High Power Programmable Intelligent Switch." Applied Mechanics and Materials 389 (August 2013): 421–24. http://dx.doi.org/10.4028/www.scientific.net/amm.389.421.

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Based on the need to develop and test the products, a single phase DSP­based programmable AC power supply is designed. The power supply is capable of providing a stable AC voltage with adjustable amplitude and frequency over a wide range. Moreover, it can generate various high quality and low frequency arbitrary waveforms. Because of the advantages above, it will have great value in practice and a promising future in testing field. The main circuit of the power supply is to use rectifier and filter to make 220V AC voltage become steady DC voltage firstly. Then the inverter and the LC LPF are employed to produce the AC voltage which is required in the test system. The key part of the inverter is phase shift full bridge.
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Lanter, William C., Hiroyuki Kosai, Tyler Bixel, B. Allen Tolson, Jeffery Stricker, James Scofield, Navjot Brar, and Biswajit Ray. "Capacitor Characterization Study for a High Power, High Frequency Converter Application." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000174–81. http://dx.doi.org/10.4071/hitec-jstricker-wa11.

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Recent advances in SiC power devices and high temperature magnetic and insulation materials has led to an increase in activity to develop compact, high switch rate power system components that can operate at temperatures in excess of 200°C. These efforts have highlighted the need to develop capacitor technology for high power, high frequency power filter applications, which can experience cycling over a wide range of temperature (−55 °C to 250 °C). A modeling and simulation capability was used to investigate device architecture and electrical performance relationships for a select group of wound and stacked devices, which were then evaluated for use in a power conditioning application. A finite element analysis of the device architectures was used to develop a better understanding of how magnetic fields and thermal profiles affect the performance of the capacitors in maintaining a low ripple voltage at high switch rates (>20 kHz). Both predicted electrical properties and empirical data were utilized as SPICE simulation input parameters to evaluate the performance of the different capacitors in an interleaved DC-DC boost converter model. Of interest is developing a better understanding of how the device architecture and its electrical properties affect its performance as a filtering device in a high power, high frequency application.
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Nan, Qiu, and Fan Yin Hai. "Digital Controlled High Power Mid-Frequency Pulsed Power Supply." Advanced Materials Research 108-111 (May 2010): 1332–37. http://dx.doi.org/10.4028/www.scientific.net/amr.108-111.1332.

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In this article a novel scheme of high power mid-frequency pulse power supply is proposed. The supply is made up of two major stages. First stage is dual interleaved buck chopper stage in order to make the DC bus and output pulse voltage controllable. Second stage is a inverter converting the DC voltage into a series of square AC voltage pulse. IGBT module(300A-1200V) is used as the main switch device for the proposed supply is a high power application. As we know large capacity power IGBT module can hardly work as high as 40Khz[1], so to solve this problem, interleaved control scheme is incorporated. Basic ideas are to share the total switching losses. To combine several converters working under certain sequence is the key point. Final output pulse frequency is 20-40Khz,voltage level is 0-800V, and pulse width is 0-90% changeable. The whole system is concise effective. Experimental results verified the feasibility of abovementioned power supply.
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Wang, Xiao Lei, and Yong Wei Zhang. "A Noise-Optimal Integrator for High-Precision SC Sigma Delta Modulators." Applied Mechanics and Materials 644-650 (September 2014): 3322–28. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3322.

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Based on N-well Chartered 0.35-um CMOS technology, we designed an integrator for a low-power and high-precision sigma-delta modulator, which has a structure of third-order CIFF, one bit quantization. Amplifier designed in this paper use the PMOS folded cascade differential structure. All switches of the switch capacitance integrator are CMOS switch. The structure-improved integrator can be used to preliminarily filter the noise power of the input signal, and reduce the noise into the modulator, combined with bottom plate sampling technology and the right timing sequence. Input sinusoidal signal has frequency of 65.625Hz and amplitude of 0.6V. It’s simulated in cadence spectre with sampling frequency of 76.8kHz and power supply voltage of 3.3V. FFT analysis of the integrator output shows that the noise floor is-94.3dB, which meets the performance requirements of the system.
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Hertel, Jens Christian, Yasser Nour, and Arnold Knott. "Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations." IEEE Journal of Emerging and Selected Topics in Power Electronics 6, no. 2 (June 2018): 526–38. http://dx.doi.org/10.1109/jestpe.2017.2777884.

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Quan, Jian Zhou, Sheng Hua Wu, Peng Ju Cao, and Jian Shi Xu. "A Commutation Strategy for Matrix Sinusoidal Waveform Converter with High-Frequency Link in Electric Power Systems." Advanced Materials Research 676 (March 2013): 222–26. http://dx.doi.org/10.4028/www.scientific.net/amr.676.222.

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To achieve safety commutation of the bidirectional switch in Matrix Sinusoidal waveform converter with high-frequency link, a decoupling time-driven strategy is proposed in this paper. The two gates in each bidirectional switch are driven by different signals, so the voltage surge caused by non-synchronous commutation of two bidirectional switches can be avoided, and both ZVS and ZCS are also achieved. Since the current polarity of load need not to be detected, the circuit is easy in realization. Experiments has been carried out to verify the feasibility of the proposed method.
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Luo, Xiaoxiao, Qian Wang, Mingming Du, Yingkai Long, and Xiping Jiang. "The Development of Solid-state Pulse Generator based on Marx Circuit with Chopping Switch." Journal of Physics: Conference Series 2491, no. 1 (April 1, 2023): 012012. http://dx.doi.org/10.1088/1742-6596/2491/1/012012.

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Abstract A solid-state pulse source is mainly formed by replacing the spark switch in a traditional pulse source with semiconductor switch device. Compared with conventional gas switch devices such as spark switches, semiconductor switch devices have the advantages of high work repetition frequency, long service life, small size, high efficiency, high reliability, easy control, and active shutdown. However, there are still problems, such as the solid-state switch being easily broken down by high voltage, the rising and falling edges of the pulse being slow, and the loss is enormous. In this paper, a solid-state pulse generator based on Marx with a chopping switch circuit is developed, which effectively solves the above problems. The pulse generator comprises DC power, a switching power circuit, a Marx circuit with a chopping switch, a serial port touch screen, and an optical fiber transmission circuit.
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Dissertations / Theses on the topic "High frequency power switch"

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Ambatipudi, Radhika. "High Frequency (MHz) Planar Transformers for Next Generation Switch Mode Power Supplies." Doctoral thesis, Mittuniversitetet, Avdelningen för elektronikkonstruktion, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-20270.

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Increasing the power density of power electronic converters while reducing or maintaining the same cost, offers a higher potential to meet the current trend inrelation to various power electronic applications. High power density converters can be achieved by increasing the switching frequency, due to which the bulkiest parts, such as transformer, inductors and the capacitor's size in the convertercircuit can be drastically reduced. In this regard, highly integrated planar magnetics are considered as an effective approach compared to the conventional wire wound transformers in modern switch mode power supplies (SMPS). However, as the operating frequency of the transformers increase from several hundred kHz to MHz, numerous problems arise such as skin and proximity effects due to the induced eddy currents in the windings, leakage inductance and unbalanced magnetic flux distribution. In addition to this, the core losses whichare functional dependent on frequency gets elevated as the operating frequency increases. Therefore, this thesis provides an insight towards the problems related to the high frequency magnetics and proposes a solution with regards to different aspects in relation to designing high power density, energy efficient transformers.The first part of the thesis concentrates on the investigation of high power density and highly energy efficient coreless printed circuit board (PCB) step-down transformers useful for stringent height DC-DC converter applications, where the core losses are being completely eliminated. These transformers also maintain the advantages offered by existing core based transformers such as, high coupling coefficient, sufficient input impedance, high energy efficiency and wide frequencyband width with the assistance of a resonant technique. In this regard, several coreless PCB step down transformers of different turn’s ratio for power transfer applications have been designed and evaluated. The designed multilayered coreless PCB transformers for telecom and PoE applications of 8,15 and 30W show that the volume reduction of approximately 40 - 90% is possible when compared to its existing core based counterparts while maintaining the energy efficiency of the transformers in the range of 90 - 97%. The estimation of EMI emissions from the designed transformers for the given power transfer application proves that the amount of radiated EMI from a multilayered transformer is lessthan that of the two layered transformer because of the decreased radius for thesame amount of inductance.The design guidelines for the multilayered coreless PCB step-down transformer for the given power transfer application has been proposed. The designed transformer of 10mm radius has been characterized up to the power level of 50Wand possesses a record power density of 107W/cm3 with a peak energy efficiency of 96%. In addition to this, the design guidelines of the signal transformer fordriving the high side MOSFET in double ended converter topologies have been proposed. The measured power consumption of the high side gate drive circuitvitogether with the designed signal transformer is 0.37W. Both these signal andpower transformers have been successfully implemented in a resonant converter topology in the switching frequency range of 2.4 – 2.75MHz for the maximum load power of 34.5W resulting in the peak energy efficiency of converter as 86.5%.This thesis also investigates the indirect effect of the dielectric laminate on the magnetic field intensity and current density distribution in the planar power transformers with the assistance of finite element analysis (FEA). The significanceof the high frequency dielectric laminate compared to FR-4 laminate in terms of energy efficiency of planar power transformers in MHz frequency region is also explored.The investigations were also conducted on different winding strategies such as conventional solid winding and the parallel winding strategies, which play an important role in the design and development of a high frequency transformer and suggested a better choice in the case of transformers operating in the MHz frequency region.In the second part of the thesis, a novel planar power transformer with hybrid core structure has been designed and evaluated in the MHz frequency region. The design guidelines of the energy efficient high frequency planar power transformerfor the given power transfer application have been proposed. The designed corebased planar transformer has been characterized up to the power level of 50W and possess a power density of 47W/cm3 with maximum energy efficiency of 97%. This transformer has been evaluated successfully in the resonant converter topology within the switching frequency range of 3 – 4.5MHz. The peak energy efficiency ofthe converter is reported to be 92% and the converter has been tested for the maximum power level of 45W, which is suitable for consumer applications such as laptop adapters. In addition to this, a record power density transformer has been designed with a custom made pot core and has been characterized in thefrequency range of 1 - 10MHz. The power density of this custom core transformer operating at 6.78MHz frequency is 67W/cm3 and with the peak energy efficiency of 98%.In conclusion, the research in this dissertation proposed a solution for obtaining high power density converters by designing the highly integrated, high frequency(1 - 10MHz) coreless and core based planar magnetics with energy efficiencies inthe range of 92 - 97%. This solution together with the latest semiconductor GaN/SiC switching devices provides an excellent choice to meet the requirements of the next generation ultra flat low profile switch mode power supplies (SMPS).
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Worapishet, Apisak. "High frequency low power switched-current techniques." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.392911.

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Kim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.

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With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic drawbacks of CMOS technology. As an effort to overcome the challenges, the high-power handling T/R switches are introduced as the first part of this dissertation. The proposed differential switch topology and feed-forward capacitor helps reducing the voltage stress over the switch devices, enabling a linear power transmission. With the high-power T/R switches, a new transmitter front-end topology - differential PA and T/R switch topology with the multi-section PA output matching network - is also proposed. The multi-stage PA output matching network assists to relieve the voltage stress over the switch device even more, by providing a low switch operating impedance. By analyzing the power performance and efficiency of entire transmitter module, design methodology for the high-power handling and efficient transmitter module is established. Finally, the research in this dissertation provides low-cost, high-power handling, and efficient CMOS RF transmitter module for wireless applications.
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Ambatipudi, Radhika. "Multilayered Coreless Printed Circuit Board (PCB) Step-down Transformers for High Frequency Switch Mode Power Supplies (SMPS)." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-13967.

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The Power Supply Unit (PSU) plays a vital role in almost all electronic equipment. The continuous efforts applied to the improvement of semiconductor devices such as MOSFETS, diodes, controllers and MOSFET drivers have led to the increased switching speeds of power supplies. By increasing the switching frequency of the converter, the size of passive elements such as inductors, transformers and capacitors can be reduced. Hence, the high frequency transformer has become the backbone in isolated AC/DC and DC/DC converters. The main features of transformers are to provide isolation for safety purpose, multiple outputs such as in telecom applications, to build step down/step up converters and so on. The core based transformers, when operated at higher frequencies, do have limitations such as core losses which are proportional to the operating frequency. Even though the core materials are available in a few MHz frequency regions, because of the copper losses in the windings of the transformers those which are commercially available were limited from a few hundred kHz to 1MHz. The skin and proximity effects because of induced eddy currents act as major drawbacks while operating these transformers at higher frequencies. Therefore, it is necessary to mitigate these core losses, skin and proximity effects while operating the transformers at very high frequencies. This can be achieved by eliminating the magnetic cores of transformers and by introducing a proper winding structure. A new multi-layered coreless printed circuit board (PCB) step down transformer for power transfer applications has been designed and this maintains the advantages offered by existing core based transformers such as, high voltage gain, high coupling coefficient, sufficient input impedance and high energy efficiency with the assistance of a resonant technique. In addition, different winding structures have been studied and analysed for higher step down ratios in order to reduce copper losses in the windings and to achieve a higher coupling coefficient. The advantage of increasing the layer for the given power transfer application in terms of the coupling coefficient, resistance and energy efficiency has been reported. The maximum energy efficiency of the designed three layered transformers was found to be within the range of 90%-97% for power transfer applications operated in a few MHz frequency regions. The designed multi-layered coreless PCB transformers for given power applications of 8, 15 and 30W show that the volume reduction of approximately 40-90% is possible when compared to its existing core based counterparts. The estimation of EMI emissions from the designed transformers proves that the amount of radiated EMI from a three layered transformer is less than that of the two layered transformer because of the decreased radius for the same amount of inductance. Multi-layered coreless PCB gate drive transformers were designed for signal transfer applications and have successfully driven the double ended topologies such as the half bridge, the two switch flyback converter and resonant converters with low gate drive power consumption of about half a watt. The performance characteristics of these transformers have also been evaluated using the high frequency magnetic material made up of NiZn and operated in the 2-4MHz frequency region. These multi-layered coreless PCB power and signal transformers together with the latest semiconductor switching devices such as SiC and GaN MOSFETs and the SiC schottky diode are an excellent choice for the next generation compact SMPS.
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Kotte, Hari Babu. "High Speed (MHz) Switch Mode Power Supplies (SMPS) using Coreless PCB Transformer Technology." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-13964.

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The most essential unit required for all the electronic devices is the Power Supply Unit (PSU). The main objective of power supply designers is to reduce the size, cost and weight, and to increase the power density of the converter. There is also a requirement to have a lower loss in the circuit and hence in the improvement of energy efficiency of the converter circuit. Operating the converter circuits at higher switching frequencies reduces the size of the passive components such as transformers, inductors, and capacitors, which results in a compact size, weight, and increased power density of the converter. At present the switching frequency of the converter circuit is limited due to the increased switching losses in the existing semiconductor devices and in the magnetic area, because of increased hysteresis and eddy current loss in the core based transformer. Based on continuous efforts to improve the new semi conductor materials such as GaN/SiC and with recently developed high frequency multi-layered coreless PCB step down power transformers, it is now feasible to design ultra-low profile, high power density isolated DC/DC and AC/DC power converters. This thesis is focussed on the design, analysis and evaluation of the converters operating in the MHz frequency region with the latest semi conductor devices and multi-layered coreless PCB step-down power and signal transformers. An isolated flyback DC-DC converter operated in the MHz frequency with multi-layered coreless PCB step down 2:1 power transformer has been designed and evaluated. Soft switching techniques have been incorporated in order to reduce the switching loss of the circuit. The flyback converter has been successfully tested up to a power level of 10W, in the switching frequency range of 2.7-4 MHz. The energy efficiency of the quasi resonant flyback converter was found to be in the range of 72-84% under zero voltage switching conditions (ZVS). The output voltage of the converter was regulated by implementing the constant off-time frequency modulation technique. Because of the theoretical limitations of the Si material MOSFETs, new materials such as GaN and SiC are being introduced into the market and these are showing promising results in the converter circuits as described in this thesis. Comparative parameters of the semi conductor materials such as the vi energy band gap, field strengths and figure of merit have been discussed. In this case, the comparison of an existing Si MOSFET with that of a GaN MOSFET has been evaluated using a multi-layered coreless PCB step-down power transformer for the given input/output specifications of the flyback converter circuit. It has been determined that the energy efficiency of the 45 to 15V regulated converter using GaN was improved by 8-10% compared to the converter using the Si MOSFET due to the gate drive power consumption, lower conduction losses and improved rise/fall times of the switch. For some of the AC/DC and DC/DC applications such as laptop adapters, set-top-box, and telecom applications, high voltage power MOSFETs used in converter circuits possess higher gate charges as compared to that of the low voltage rating MOSFETs. In addition, by operating them at higher switching frequencies, the gate drive power consumption, which is a function of frequency, increases. The switching speeds are also reduced due to the increased capacitance. In order to minimize this gate drive power consumption and to increase the frequency of the converter, a cascode flyback converter was built up using a multi-layered coreless PCB transformer and this was then evaluated. Both simulation and experimental results have shown that with the assistance of the cascode flyback converter the switching speeds of the converter were increased including the significant improvement in the energy efficiency compared to that of the single switch flyback converter. In order to further maximize the utilization of the transformer, to reduce the voltage stress on MOSFETs and to obtain the maximum power density from the power converter, double ended topologies were chosen. For this purpose, a gate drive circuitry utilising the multi-layered coreless PCB gate drive transformer was designed and evaluated in both a Half-bridge and a Series resonant converter. It was found that the gate drive power consumption using this transformer was less than 0.8W for the frequency range of 1.5-3.5MHz. In addition, by using this gate drive circuitry, the maximum energy efficiency of the series resonant converter was found to be 86.5% with an output power of 36.5W.
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Motto, Kevin. "Application of High-Power Snubberless Semiconductor Switches in High-Frequency PWM Converters." Thesis, Virginia Tech, 2000. http://hdl.handle.net/10919/35778.

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For many years, power electronics in the high-power area was performed with extremely slow semiconductor switches. These switches, including the thyristor and the Gate Turn-Off (GTO) thyristor, had the capacity to handle very high voltages and currents but lacked the ability to perform high frequency switching. Low-power converters, such as computer power supplies and low horsepower motor drives, have employed high-frequency switching for years and have benefited from very nice output waveforms, good control dynamic performance, and many other advantages compared to low frequency switching. Recent improvements in high-power semiconductor technology has brought switching performance similar to that of the low-power MOSFETs and IGBTs to the high-power area through the advancement of the IGBT's ratings to create the High Voltage IGBT (HVIGBT) and the development of new GTO-derived devices including the Integrated Gate Commutated Thyristor (IGCT) and the Emitter Turn-Off (ETO) thyristor. These new devices all feature high switching speed and the capability to turn off without the requirement for a turn-off snubber. With these new device technologies the high-power field of power electronics can realize dramatic improvements in the performance of systems for utility applications and motor drives. However, with these high-speed switches come new issues relating to noise, protection, performance of diodes, and thermal management in high-frequency applications. This thesis addresses the application of these new devices, especially the ETO and the IGCT. Examples of each device technology (IGBT, IGCT, and ETO) have been characterized in both their switching performance and conduction loss. The tests performed show how these new devices may be applied to various applications. The switching loss, especially related to turn-off, is the dominant factor in the power dissipation of the high-power switches, so knowledge of these characteristics are very important in the system design. To demonstrate the operation of the ETO, two power converters were constructed. The first was a 100 kW DC/DC converter, which demonstrated the operation of the ETO in a typical building block configuration, the half-bridge. The second system, a 1 MegaVolt-Amp (MVA) three-phase inverter, demonstrated the ETO in an application where the switching frequency and power level were both high. The test results demonstrate the expected characteristics of the high-frequency converters. The development of the ETO's gate driver is described. During the inverter testing, a new failure mode was found involving a parasitic diode within the ETO. This failure mode was analyzed and solutions were proposed. One of the proposed solutions was implemented and there were no more failures of this type. Another possible failure mode regarding a circulating current in an IGCT-based system is also analyzed. Soft-switching techniques can help reduce the switching loss in power semiconductor switches. Several topologies were considered for application in the high-power area, and one was selected for further investigation. A prototype Zero Current Transition (ZCT) circuit was developed using an IGCT as the main switch. The turn-off loss was reduced dramatically through the tested ZCT circuit, and the diode recovery was also alleviated.
Master of Science
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Wong, Fu Keung, and n/a. "High Frequency Transformer for Switching Mode Power Supplies." Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20050211.110915.

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A power supply is an essential part of all electronic devices. A switching mode power supply is a light weight power solution for most modern electronic equipment. The high frequency transformer is the backbone of modern switched mode power supplies. The skin effect and proximity effects are major problems in high frequency transformer design, because of induced eddy currents. These effects can result in transformers being destroyed and losing their power transferring function at high frequencies. Therefore, eddy currents are unwanted currents in high frequency transformers. Leakage inductance and the unbalanced magnetic flux distribution are two further obstacles for the development of high frequency transformers. Winding structures of power transformers are also a critical part of transformer design and manufacture, especially for high frequency applications. A new planar transformer with a helical winding structure has been designed and can maintain the advantages of existing planar transformers and significantly reduce the eddy currents in the windings. The maximum eddy current density can be reduced to 27% of the density of the planar transformer with meander type winding structure and 33% of the density of the transformer with circular spiral winding structure at an operating frequency of 1MHz. The voltage ratio of the transformer with helical winding structure is effectively improved to 150% of the voltage ratio of the planar transformer with circular spiral coils. With the evenly distributed magnetic flux around the winding, the planar transformer with helical winding structure is excellent for high frequency switching mode power supplies in the 21st Century.
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Wong, Fu Keung. "High Frequency Transformer for Switching Mode Power Supplies." Thesis, Griffith University, 2004. http://hdl.handle.net/10072/367650.

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A power supply is an essential part of all electronic devices. A switching mode power supply is a light weight power solution for most modern electronic equipment. The high frequency transformer is the backbone of modern switched mode power supplies. The skin effect and proximity effects are major problems in high frequency transformer design, because of induced eddy currents. These effects can result in transformers being destroyed and losing their power transferring function at high frequencies. Therefore, eddy currents are unwanted currents in high frequency transformers. Leakage inductance and the unbalanced magnetic flux distribution are two further obstacles for the development of high frequency transformers. Winding structures of power transformers are also a critical part of transformer design and manufacture, especially for high frequency applications. A new planar transformer with a helical winding structure has been designed and can maintain the advantages of existing planar transformers and significantly reduce the eddy currents in the windings. The maximum eddy current density can be reduced to 27% of the density of the planar transformer with meander type winding structure and 33% of the density of the transformer with circular spiral winding structure at an operating frequency of 1MHz. The voltage ratio of the transformer with helical winding structure is effectively improved to 150% of the voltage ratio of the planar transformer with circular spiral coils. With the evenly distributed magnetic flux around the winding, the planar transformer with helical winding structure is excellent for high frequency switching mode power supplies in the 21st Century.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
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Nuttall, Daniel Robert. "Advanced high frequency switched-mode power supply techniques and applications." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/advanced-high-frequency-switchedmode-power-supply-techniques-and-applications(5792cb86-58e3-488b-b27e-559c18e55250).html.

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This Thesis examines the operation and dynamic performance of a single-stage, single-switch power factor corrector, S4 PFC, with an integrated magnetic device, IM. Also detailed isthe development and analysis of a high power light emitting diode, HP LED, power factorcorrection converter and proposed voltage regulation band control approach.The S4 PFC consists of a cascaded discontinuous current mode, DCM, boost stage anda continuous current mode, CCM, forward converter. The S4 PFC achieves a high powerfactor, low input current harmonics and a regulated voltage output, utilising a singleMOSFET. A steady-state analysis of the S4 PFC with the IM is performed, identifying theoperating boundary conditions for the DCM power factor correction stage and the CCMoutput voltage regulation stage. Integrated magnetic analysis focuses on understanding theperformance, operation and generated flux paths within the IM core, ensuring the device doesnot affect the normal operation of the converter power stage. A design method for the S4 PFCwith IM component is developed along with a cost analysis of this approach. Analysis predictsthe performance of the S4 PFC and the IM, and the theoretical work is validated by MATLABand SABER simulations and measurements of a 180 W prototype converter.It is not only the development of new topological approaches that drives theadvancement of power electronic techniques. The recent emergence of HP LEDs has led to aflurry of new application areas for these devices. A DCM buck-boost converter performs thepower factor correction and energy storage, and a cascaded boundary conduction current modebuck converter regulates the current through the LED arrays. To match the useful operatinglifetime of the HP LEDs, electrolytic capacitors are not used in the PFC converter. Analysisexamines the operation and dynamic characteristics of a PFC converter with low capacitiveenergy storage capacity and its implications on the control method. A modified regulationband control approach is proposed to ensure a high power factor, low input current harmonicsand output voltage regulation of the PFC stage. Small signal analysis describes the dynamicperformance of the PFC converter, Circle Criterion is used to determine the loop stability.Theoretical work is validated by SABER and MATLAB simulations and measurements of a180 W prototype street luminaire.
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Williams, Richard. "High frequency multi-element transformers for switched-mode power supplies." Thesis, University of Bristol, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283625.

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Books on the topic "High frequency power switch"

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Corradini, Luca, Dragan Maksimović, Paolo Mattavelli, and Regan Zane. Digital Control of High-Frequency Switched-Mode Power Converters. Hoboken, NJ, USA: John Wiley & Sons, Inc, 2015. http://dx.doi.org/10.1002/9781119025498.

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M, Krawczonek Walter, and United States. National Aeronautics and Space Administration., eds. High power, high frequency component test facility. [Washington, DC]: National Aeronautics and Space Administration, 1990.

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Kear, Dennis J. Power words program: 202 high-frequency words. Austin, Tex: Steck-Vaughn Co., 1985.

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Meneghesso, Gaudenzio, Matteo Meneghini, and Enrico Zanoni, eds. Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2.

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International, High Frequency Power Conversion Conference (2nd 1987 Washington D. C. ). 1987 High Frequency Power Conversion International, Washington, D.C. Ventura, Calif: Intertec Communications, 1987.

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Chryssis, George. High-frequency switching power supplies: Theory and design. 2nd ed. New York: McGraw-Hill, 1989.

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Xu, Dianguo, Yueshi Guan, Yijie Wang, and Xiangjun Zhang. Multi-MHz High Frequency Resonant DC-DC Power Converter. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-7424-5.

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United States. National Aeronautics and Space Administration., ed. Resistojet control and power for high frequency ac buses. [Washington, D.C.]: National Aeronautics and Space Administration, 1987.

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Skinner, A. J. Four quadrant inverter technologies for high frequency UPS. Leatherhead, Surrey, England: ERA Technology, 1992.

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Tadesse, Dawit. Performance of a high frequency power supply for a fluorescent lamp. Ottawa: National Library of Canada = Bibliothèque nationale du Canada, 1992.

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Book chapters on the topic "High frequency power switch"

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Herder, Helmut, Bob Guenther, and Gerry Klemm. "Performance Enhancements Achieved with High Frequency Switch Mode Power Supplies." In Electrostatic Precipitation, 264–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-89251-9_51.

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Han, Shaohua, Xiuru Wang, Peng Dai, Jinian Pang, and Wangqing Mao. "High Frequency High Power Soft Switch Resonance Type Based on SiC Design of DC Converter Parameters." In Lecture Notes in Electrical Engineering, 9–17. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1532-1_2.

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Cheung, Vincent S. L., and Howard C. Luong. "Design of Low-Power and High-Frequency Switched-Opamp Circuits." In The Kluwer International Series in Engineering and Computer Science, 95–116. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3701-1_6.

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Renjin, Wang, and Wei Yunfeng. "Research on High Frequency Switched HV Power Supplies for ESP." In Electrostatic Precipitation, 345–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-89251-9_68.

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Waradzyn, Zbigniew, Robert Stala, Andrzej Mondzik, and Stanisław Piróg. "Switched Capacitor-Based Power Electronic Converter—Optimization of High Frequency Resonant Circuit Components." In Advanced Control of Electrical Drives and Power Electronic Converters, 361–78. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45735-2_15.

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Gorodny, Alexey, Andrii Dymerets, Yevhenii Kut, Yurii Denisov, and Denisova Natalia. "Generalized Method of Commutation Processes Calculation in High-Frequency Switched-Mode Power Converters." In Advances in Intelligent Systems and Computing, 71–80. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-25741-5_8.

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Schilling, F., S. Passon, J. Meisner, A. Walker, M. Kurrat, and B. Weber. "High Frequency High Voltage Power Supplies." In Lecture Notes in Electrical Engineering, 1467–76. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31680-8_139.

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Stemmler, Herbert. "High Power Industrial Orives." In Power Electronics and Variable Frequency Drives, 332–99. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9780470547113.ch7.

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Yip, Peter C. L. "Power Amplifiers." In High-Frequency Circuit Design and Measurements, 119–38. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-011-6950-9_7.

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Coffie, Robert L. "High Power High Frequency Transistors: A Material’s Perspective." In High-Frequency GaN Electronic Devices, 5–41. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_2.

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Conference papers on the topic "High frequency power switch"

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Ahmed Abdelrahman, A. A., E. E. Omer Elfaki, and H. A. ElnazirAdam. "Design of high frequency transformer for switch mode power supply." In 2015 International Conference on Computing, Control, Networking, Electronics and Embedded Systems Engineering (ICCNEEE). IEEE, 2015. http://dx.doi.org/10.1109/iccneee.2015.7381443.

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Pegado, Raoni de A., Ruan C. M. Gomes, Luciano F. S. Alves, Montie A. Vitorino, Yuri P. M. Rodriguez, and Antonio V. M. L. Filho. "High-frequency switch modeling technique applied to DC-DC converters simulation." In 2017 Brazilian Power Electronics Conference (COBEP). IEEE, 2017. http://dx.doi.org/10.1109/cobep.2017.8257250.

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Song, Peter, Robert L. Schmid, Ahmet Cagri Ulusoy, and John D. Cressler. "A high-power, low-loss W-band SPDT switch using SiGe PIN diodes." In 2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2014. http://dx.doi.org/10.1109/rfic.2014.6851695.

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Kim, Hyun-Woong, Minsik Ahn, Ockgoo Lee, Chang-Ho Lee, and Joy Laskar. "A high power CMOS differential T/R switch using multi-section impedance transformation technique." In 2010 IEEE Radio Frequency Integrated Circuits Symposium. IEEE, 2010. http://dx.doi.org/10.1109/rfic.2010.5477353.

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Gong, Yunyi, Jeffrey W. Teng, and John D. Cressler. "A Compact, High-Power, 60 GHz SPDT Switch Using Shunt-Series SiGe PIN Diodes." In 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2019. http://dx.doi.org/10.1109/rfic.2019.8701812.

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Karampoorian, H. R., G. Papi, and A. Zadehgol. "Volume and loss optimization of high frequency transformer for compact switch mode power supply considering corrected waveform factor." In 2006 IEEE Power India Conference. IEEE, 2006. http://dx.doi.org/10.1109/poweri.2006.1632487.

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Ogiwara, H., Y. Fujita, R. Urabe, M. Itoi, T. Sugai, M. Kuwata, and M. Nakaoka. "SEPP high-frequency inverter incorporating an auxiliary switch and its performance evaluation." In 2008 13th International Power Electronics and Motion Control Conference (EPE/PEMC 2008). IEEE, 2008. http://dx.doi.org/10.1109/epepemc.2008.4635278.

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Mauch, Daniel, Cameron Hettler, W. W. Sullivan, and J. Dickens. "Fiber optic system for high frequency burst operation of a silicon carbide photoconductive semiconductor switch." In 2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC). IEEE, 2012. http://dx.doi.org/10.1109/ipmhvc.2012.6518752.

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Ambatipudi, Radhika, Hari Babu Kotte, and Kent Bertilsson. "High performance planar power transformer with high power density in MHz frequency region for next generation switch mode power supplies." In 2013 IEEE Applied Power Electronics Conference and Exposition - APEC 2013. IEEE, 2013. http://dx.doi.org/10.1109/apec.2013.6520591.

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Hoffmann, K. F., and J. P. Karst. "High frequency power switch - improved performance by MOSFETs and IGBTs connected in parallel." In 2005 IEEE 11th European Conference on Power Electronics and Applications. IEEE, 2005. http://dx.doi.org/10.1109/epe.2005.219594.

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Reports on the topic "High frequency power switch"

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Turnquist, David V., and Brian W. Wegner. High Power Switch Design. Fort Belvoir, VA: Defense Technical Information Center, January 1995. http://dx.doi.org/10.21236/ada291608.

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Hirshfield, Jay L. Plasma Switch for High-Power Active Pulse Compressor. Office of Scientific and Technical Information (OSTI), November 2013. http://dx.doi.org/10.2172/1098136.

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Hirshfield, Jay L. High-Power Microwave Switch Employing Electron Beam Triggering. Office of Scientific and Technical Information (OSTI), September 2012. http://dx.doi.org/10.2172/1052707.

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Neri, J. M., J. R. Boller, P. F. Ottinger, B. V. Weber, and F. C. Young. High voltage, high power operation of the plasma erosion opening switch. Office of Scientific and Technical Information (OSTI), April 1987. http://dx.doi.org/10.2172/6472201.

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Ebbers, C. A., W. M. Cook, and S. P. Velsko. A high average power electro-optic switch using KTP. Office of Scientific and Technical Information (OSTI), April 1994. http://dx.doi.org/10.2172/10172205.

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Jay L. Hirshfield. High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor. Office of Scientific and Technical Information (OSTI), March 2010. http://dx.doi.org/10.2172/972909.

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Chow, Weng W., and M. E. Warren. An optically-triggered semiconductor switch for high power laser beams. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/82512.

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Hirshfield, Jay L. Ferroelectric switch for a high-power Ka-band active pulse compressor. Office of Scientific and Technical Information (OSTI), December 2013. http://dx.doi.org/10.2172/1111110.

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Fazio, M. V., B. E. Carlsten, L. M. Earley, C. M. Fortgang, W. B. Haynes, and P. C. Haddock. High-power, high-frequency, annular-beam free-electron maser. Office of Scientific and Technical Information (OSTI), November 1998. http://dx.doi.org/10.2172/674865.

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Li, S. T., J. B. McGee, P. M. McGinnis, J. H. Schukantz, and Jr. Characterization of a High-Power, High-Frequency, Soft-Switching Power Converter for EMC Considerations. Fort Belvoir, VA: Defense Technical Information Center, March 2001. http://dx.doi.org/10.21236/ada389847.

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