Books on the topic 'High dielectric materials'

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1

Huff, H. R., and D. C. Gilmer, eds. High Dielectric Constant Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/b137574.

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2

Kar, Samares. High Permittivity Gate Dielectric Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

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3

Kar, Samares, ed. High Permittivity Gate Dielectric Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36535-5.

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4

S, Rathore Hazara, and Electrochemical Society. Dielectric Science and Technology Division., eds. Proceedings of the Second International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues. Pennington, NJ: Electrochemical Society, 1997.

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5

International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (1st 2003 Salt Lake City, Utah). Physics and technology of high-k gate dielectrics I : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, Reliability, and Manufacturing Issues, held in Salt Lake City, Utah, October 20-24, 2002. Edited by Kar S. 1942-, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Pennington, NJ: Electrochemical Society, 2003.

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6

Symposium on High Strain Piezoelectric Materials, Devices, and Applications. Ceramic materials and multilayer electronic devices: Proceedings of the High Strain Piezoelectric Materials, Devices, and Applications ; and Advanced Dielectric Materials and Multilayer Electronic Devices Symposia : held at the 105th Annual Meeting of the American Ceramic Society : April 27-30, 2003 in Nashville, Tennessee. Westerville, OH: American Ceramic Society, 2004.

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7

name, No. Morophotropic phase boundary perovskites, high strain piezoelectrics, and dielectric ceramics: Proceedings of the dielectric materials and multilayer electronic devices symposium and the morphotropic phase boundary phenomena and perovskite materials symposium held at the 104th annual meeting of the American Ceramic Society, April 28-May 1, 2002 in St. Louis, Missouri and the high strain piezoelectrics symposium held at the 103rd annual meeting of the the American Ceramic Society, April 22-25 2001 in Indianapolis, Indiana. Westerville, OH: American Ceramic Society, 2003.

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8

High Permittivity Gate Dielectric Materials. Springer-Verlag Berlin and Heidelberg GmbH &, 2013.

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9

Kar, Samares. High Permittivity Gate Dielectric Materials. Springer, 2016.

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10

High-K Gate Dielectric Materials. Taylor & Francis Group, 2020.

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11

Nalwa, Hari Singh. Low and High Dielectric Constant Materials. Harcourt Brace College Publishers, 1999.

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12

Nalwa, Hari Singh. Low and High Dielectric Constant Materials. Harcourt Brace College Publishers, 1999.

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13

Huff, Howard, and David Gilmer. High Dielectric Constant Materials: VLSI MOSFET Applications. Springer, 2010.

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14

Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues, Proceedings. Electrochemical Society, 2000.

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15

Dielectric Polymer Materials for High-Density Energy Storage. Elsevier - Health Sciences Division, 2018.

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16

Dielectric Polymer Materials for High-Density Energy Storage. Elsevier, 2018. http://dx.doi.org/10.1016/c2016-0-04505-9.

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17

Rathore, H. S. Low & High Dielectric Constant Materials: Materials Science, Processing & Reliability Issues (Proceedings). Electrochemical Society, 1997.

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18

Nalwa. Low and High Dielectric Constant Materials and Their Applications. Academic Pr, 1999.

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19

Nalwa. Low and High Dielectric Constant Materials and Their Applications. Academic Pr, 1999.

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20

J, Lododa Mark, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues (5th : 2000 : Toronto, Ont.), eds. Low and high dielectric constant materials: Materials science, processing, and reliability issues : proceedings of the fifth international symposium. Pennington , NJ: Electrochemical Society, Inc., 2000.

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21

Electrochemical Society. Dielectric Science and Technology Division (Corporate Author), Electrochemical Society Electronics Division (Corporate Author), and Rajendra Singh (Editor), eds. Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues and Thin Film Materials for Advanced Packaging Technologies ... (Electrochemical Society), V. 99-7.). Electrochemical Society, 1999.

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22

Houssa, Michael. High k Gate Dielectrics (Materials Science and Engineering). Taylor & Francis, 2003.

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23

1954-, Nalwa Hari Singh, ed. Handbook of low and high dielectric constant materials and their applications. San Diego: Academic Press, 1999.

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24

1946-, Singh Rajendra, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues (4th : 1999 : Seattle, Wash.), and International Symposium on Thin Film Materials for Advanced Packaging (2nd : 1999 : Seattle, Wash.), eds. Low and high dielectric constant materials: Materials science, processing, and reliability issues : proceedings of the fourth international symposium : and, thin film materials for advanced packaging technologies : proceedings of the second international symposium. Pennington , NJ: Electrochemical Society, Inc., 2000.

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25

Michel, Houssa, ed. High-K gate dielectrics. Bristol: Institute of Physics, 2004.

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26

(Editor), H. R. Huff, and D. C. Gilmer (Editor), eds. High Dielectric Constant Materials: VLSI MOSFET Applications (Springer Series in Advanced Microelectronics). Springer, 2004.

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27

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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28

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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29

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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30

Maity, Niladri Pratap, Reshmi Maity, and Srimanta Baishya. High-K Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors. Apple Academic Press, Incorporated, 2020.

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31

Physics and technology of high-k gate dielectrics II: Proceedings of the Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues : held in Orlando, Florida, October 12-16, 2003. Pennington, N.J: Electrochemical Society, 2004.

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32

Ruyan, Guo, American Ceramic Society Meeting, and American Ceramic Society Meeting, eds. Morphotropic phase boundary perovskites, high strain piezoelectrics, and dielectric ceramics: Proceedings of the dielectric materials and multilayer electronic devices symposium and the morphotropic phase boundary phenomena and perovskite materials symposium held at the 104th annual meeting of the American Ceramic Society, April 28-May 1, 2002 in St. Louis, Missouri and the high strain piezoelectrics symposium held at the 103rd annual meeting of the the American Ceramic Society, April 22-25 2001 in Indianapolis, Indiana. Westerville, Ohio: American Ceramic Society, 2003.

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33

M, Nair K., American Ceramic Society Meeting, Symposium on High Strain Piezoelectric Materials, Devices, and Applications (2003 : Nashville, Tenn.), and Symposium on Advanced Dielectric Materials and Multilayer Electronic Devices (2003 : Nashville, Tenn.), eds. Ceramic materials and multilayer electronic devices: Proceedings of the High Strain Piezoelectric Materials, Devices, and Applications, and Advanced Dielectric Materials and Multilayer Electronic Devices Symposia, held at the 105th Annual Meeting of the American Ceramic Society, April 27-30, 2003 in Nashville, Tennessee. Westerville, Ohio: American Ceramic Society, 2004.

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34

G, Snyder Paul, and United States. National Aeronautics and Space Administration., eds. Materials, structures, and devices for high-speed electronics: Final report, grant period, January 1, 1981 - December 31, 1992. [Washington, DC: National Aeronautics and Space Administration, 1992.

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35

G, Snyder Paul, and United States. National Aeronautics and Space Administration., eds. Materials, structures, and devices for high-speed electronics: Final report, grant period, January 1, 1981 - December 31, 1992. [Washington, DC: National Aeronautics and Space Administration, 1992.

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36

Kim Young-Hee and Jack C. Lee. Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability (Synthesis Lectures on Solid State Materials and Devices). Morgan & Claypool Publishers, 2005.

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37

(Editor), H. R. Huff, C. A. Richter (Editor), M. L. Green (Editor), G. Lucovsky (Editor), and T. Hattori (Editor), eds. Ultrathin Sio2 and High-K Materials for Ulsi Gate Dielectrics: Symposium Held April 5-8, 1999 San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 1999.

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38

(Editor), A. Dimoulas, E. Gusev (Editor), P. C. McIntyre (Editor), and M. Heyns (Editor), eds. Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics). Springer, 2007.

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39

Horing, Norman J. Morgenstern. Graphene. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198791942.003.0012.

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Abstract:
Chapter 12 introduces Graphene, which is a two-dimensional “Dirac-like” material in the sense that its energy spectrum resembles that of a relativistic electron/positron (hole) described by the Dirac equation (having zero mass in this case). Its device-friendly properties of high electron mobility and excellent sensitivity as a sensor have attracted a huge world-wide research effort since its discovery about ten years ago. Here, the associated retarded Graphene Green’s function is treated and the dynamic, non-local dielectric function is discussed in the degenerate limit. The effects of a quantizing magnetic field on the Green’s function of a Graphene sheet and on its energy spectrum are derived in detail: Also the magnetic-field Green’s function and energy spectrum of a Graphene sheet with a quantum dot (modelled by a 2D Dirac delta-function potential) are thoroughly examined. Furthermore, Chapter 12 similarly addresses the problem of a Graphene anti-dot lattice in a magnetic field, discussing the Green’s function for propagation along the lattice axis, with a formulation of the associated eigen-energy dispersion relation. Finally, magnetic Landau quantization effects on the statistical thermodynamics of Graphene, including its Free Energy and magnetic moment, are also treated in Chapter 12 and are seen to exhibit magnetic oscillatory features.
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