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Journal articles on the topic 'Hexagonal Boron Nitride Films'

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Author: Grafiati

Published: 10 December 2022

Last updated: 28 January 2023

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1

Kester, D. J., K. S. Ailey, R. F. Davis, and K. L. More. "Phase evolution in boron nitride thin films." Journal of Materials Research 8, no. 6 (June 1993): 1213–16. http://dx.doi.org/10.1557/jmr.1993.1213.

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Boron nitride (BN) thin films were deposited on monocrystalline Si(100) wafers using electron beam evaporation of boron with simultaneous bombardment by nitrogen and argon ions. The effect of film thickness on the resultant BN phase was investigated using Fourier transform infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM). These techniques revealed the consecutive deposition of an initial 20 Å thick layer of amorphous BN, 20–50 Å of hexagonal BN having a layered structure, and a final layer of the polycrystalline cubic phase. The growth sequence of the layers is believed to result primarily from increasing biaxial compressive stresses. Favorable surface and interface energy and crystallographic relationships may also assist in the nucleation of the cubic and the hexagonal phases, respectively. The presence of the amorphous and hexagonal regions explains why there have been no reports of the growth of 100% cubic boron nitride on Si.

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2

Harris, Stephen J., Anita M. Weiner, Gary L. Doll, and Wen-Jin Meng. "Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride." Journal of Materials Research 12, no. 2 (February 1997): 412–15. http://dx.doi.org/10.1557/jmr.1997.0060.

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A BN film containing comparable amounts of sp2 and sp3 phases was subjected to a gas-phase chemical etch in a hot-filament environment containing 1% CH4 in H2. After a partial etch, examination by FTIR shows that the sp2 was preferentially etched, leaving a larger sp3 fraction than in the unetched film. The possibility that preferential etching could be used to increase the purity of cBN films is discussed.

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3

Buyuk, Bulent, Yapincak Goncu, A. Beril Tugrul, and Nuran Ay. "Swelling on neutron induced hexagonal boron nitride and hexagonal boron nitride-titanium diboride composites." Vacuum 177 (July 2020): 109350. http://dx.doi.org/10.1016/j.vacuum.2020.109350.

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4

Chen, Xi, Chun Bo Tan, Kai Ran Luan, Shuai Wang, Fang Ye Li, Xiu Huan Liu, Ji Hong Zhao, Yan Jun Gao, and Zhan Guo Chen. "Epitaxially Grown Hexagonal Boron Nitride Films on Sapphire and Silicon Substrates." Key Engineering Materials 843 (May 2020): 90–96. http://dx.doi.org/10.4028/www.scientific.net/kem.843.90.

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Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.

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5

Kotova, L. V., L. A. Altynbaev, M. O. Zhukova, B. T. Hogan, A. Baldycheva, M. A. Kaliteevski, and V. P. Kochereshko. "Anisotropic Optical Properties of Hexagonal Boron Nitride Films." Bulletin of the Russian Academy of Sciences: Physics 86, no. 7 (July 2022): 813–16. http://dx.doi.org/10.3103/s1062873822070176.

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6

Checchetto, Riccardo, and Antonio Miotello. "Deuterium diffusion through hexagonal boron nitride thin films." Journal of Applied Physics 87, no. 1 (January 2000): 110–16. http://dx.doi.org/10.1063/1.371831.

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7

Lee, Kang Hyuck, Hyeon-Jin Shin, Brijesh Kumar, Han Sol Kim, Jinyeong Lee, Ravi Bhatia, Sang-Hyeob Kim, et al. "Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films." Angewandte Chemie 126, no. 43 (September 9, 2014): 11677–81. http://dx.doi.org/10.1002/ange.201405762.

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8

Lee, Kang Hyuck, Hyeon-Jin Shin, Brijesh Kumar, Han Sol Kim, Jinyeong Lee, Ravi Bhatia, Sang-Hyeob Kim, et al. "Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films." Angewandte Chemie International Edition 53, no. 43 (September 9, 2014): 11493–97. http://dx.doi.org/10.1002/anie.201405762.

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9

Chng, Soon Siang, Minmin Zhu, Jing Wu, Xizu Wang, Zhi Kai Ng, Keke Zhang, Chongyang Liu, Maziar Shakerzadeh, Siuhon Tsang, and Edwin Hang Tong Teo. "Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors." Journal of Materials Chemistry C 8, no. 13 (2020): 4421–31. http://dx.doi.org/10.1039/c9tc06733g.

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10

Zhang, L., X. T. Wang, N. X. Ci, R. Q. Peng, G. Q. Zhao, L. J. Ci, and G. H. Min. "Fabrication, Optimization, and Mechanism Analysis of Graphene/Hexagonal Boron Nitride Stacked Film." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 44, no. 9 (December 13, 2022): 1163–77. http://dx.doi.org/10.15407/mfint.44.09.1163.

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11

Baazi, Tandjaoui, and Emile J. Knystautas. "Hexagonal boron nitride synthesis by nitrogen ion implantation of boron films." Thin Solid Films 232, no. 2 (September 1993): 185–93. http://dx.doi.org/10.1016/0040-6090(93)90007-c.

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12

Nasr Esfahani, Azam, Alan J. Malcolm, Luzhu Xu, HeeBong Yang, Thomas Storwick, Na Young Kim, and Michael A. Pope. "Ultra-thin films of solution-exfoliated hexagonal boron nitride by Langmuir deposition." Journal of Materials Chemistry C 8, no. 39 (2020): 13695–704. http://dx.doi.org/10.1039/d0tc02933e.

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Langmuir films of pure, solution-exfoliated hexagonal boron nitride, transferable to arbitrary substrates, are demonstrated as promising dielectric layers suitable for transparent and flexible optoelectronics.

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13

Lee, Jae-Kap, Jin-Gyu Kim, K. P. S. S. Hembram, Seunggun Yu, and Sang-Gil Lee. "AB-stacked nanosheet-based hexagonal boron nitride." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 77, no. 2 (March 17, 2021): 260–65. http://dx.doi.org/10.1107/s2052520621000317.

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Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (∼10–500 nm in thickness) exhibit stacks of parallel nanosheets (∼10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2–20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as `substrate-induced 2D growth', where the substrate plays the role of pressure.

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14

Alkhamisi, Manal, Vladimir V. Korolkov, Anton S. Nizovtsev, James Kerfoot, Takashi Taniguchi, Kenji Watanabe, Nicholas A. Besley, Elena Besley, and Peter H. Beton. "The growth and fluorescence of phthalocyanine monolayers, thin films and multilayers on hexagonal boron nitride." Chemical Communications 54, no. 85 (2018): 12021–24. http://dx.doi.org/10.1039/c8cc06304d.

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15

Lin, Jinjun, Roland Yingjie Tay, Hongling Li, Lin Jing, Siu Hon Tsang, Hong Wang, Minmin Zhu, Dougal G. McCulloch, and Edwin Hang Tong Teo. "Smoothening of wrinkles in CVD-grown hexagonal boron nitride films." Nanoscale 10, no. 34 (2018): 16243–51. http://dx.doi.org/10.1039/c8nr03984d.

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16

Kotova, L. V., L. A. Altynbaev, M. O. Zhukova, B. T. Hogan, A. Baldycheva, D. M. Kurbatov, and V. P. Kochereshko. "Anisotropy of Optical Properties of Hexagonal Boron Nitride Films." Physics of the Solid State 63, no. 9 (September 2021): 1437–41. http://dx.doi.org/10.1134/s1063783421090213.

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17

Greber, Thomas, Louis Brandenberger, Martina Corso, Anna Tamai, and Jürg Osterwalder. "Single layer hexagonal boron nitride films on Ni(110)." e-Journal of Surface Science and Nanotechnology 4 (2006): 410–13. http://dx.doi.org/10.1380/ejssnt.2006.410.

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18

Ismach, Ariel, Harry Chou, Domingo A. Ferrer, Yaping Wu, Stephen McDonnell, Herman C. Floresca, Alan Covacevich, et al. "Toward the Controlled Synthesis of Hexagonal Boron Nitride Films." ACS Nano 6, no. 7 (June 21, 2012): 6378–85. http://dx.doi.org/10.1021/nn301940k.

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19

Biswas, Abhijit, Qiyuan Ruan, Frank Lee, Chenxi Li, Sathvik Ajay Iyengar, Anand B. Puthirath, Xiang Zhang, et al. "Unidirectional domain growth of hexagonal boron nitride thin films." Applied Materials Today 30 (February 2023): 101734. http://dx.doi.org/10.1016/j.apmt.2023.101734.

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20

DENG, JINXIANG, GUANGHUA CHEN, and XUEMEI SONG. "CHARACTERIZATION OF CUBIC BORON NITRIDE THIN FILMS DEPOSITED BY RF SPUTTER." International Journal of Modern Physics B 16, no. 28n29 (November 20, 2002): 4339–42. http://dx.doi.org/10.1142/s021797920201539x.

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Cubic boron nitride (c-BN) thin films have been deposited on Si substrates by radio frequency sputter. Sputtering target was hot pressed hexagonal boron nitride of 4N purity. Sputtering gas was the mixture of nitrogen and argon. During depositing c-BN thin films, substrates were biased by dc voltage negatively with respect to ground. By optimizing the deposition conditions, the boron nitride (BN) films containing a large amount of cubic phase were obtained. The samples were characterized with Fourier transformation infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). According to FTIR, the cubic phase content of c-BN thin films was evaluated to be 92. The B/N ratio was estimated to be approximately 1 from XPS. The AFM shows that the c-BN thin films delaminated from Si substrates obviously.

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21

Perevalov T. V., Gritsenko V. A., Bukhtiyarov A. V., and Prosvirin I. P. "Electronic structure of vacancy-type defects in hexagonal boron nitride." Physics of the Solid State 64, no. 7 (2022): 792. http://dx.doi.org/10.21883/pss.2022.07.54582.308.

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The electronic structure of vacancy-type defects in hexagonal boron nitride (h-BN) synthesized by chemical vapor deposition, promising for microelectronics, is studied. The research is carried out using X-ray photoelectron spectroscopy and a simulation within the density functional theory. It is shown that the h-BN bombardment with argon ions leads not only to the near-surface layer cleaning from organic pollutants, but also to the generation of a high intrinsic defects concentration, mainly boron-nitrogen divacances. The greater the boron-nitrogen divacances concentration is, the longer the bombardment time is. The boron-nitrogen divacansion in h-BN is a significantly more energetically favorable defect than that of isolated boron and nitrogen vacancies. It is concluded that the most probable diamagnetic vacancy-type defects capable of participating in localization and, as a consequence, in charge transport in h-BN films is the boron-nitrogen divacancy. Keywords: boron nitride (BN), photoelectron spectroscopy (XPS), quantum chemical simulation, density functional theory (DFT).

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22

Liang, Hao, Weitong Lin, Qiming Wang, Wei Zhang, Shixue Guan, Jiawei Zhang, Ji-Jung Kai, Duanwei He, and Fang Peng. "Ultrahard and stable nanostructured cubic boron nitride from hexagonal boron nitride." Ceramics International 46, no. 8 (June 2020): 12788–94. http://dx.doi.org/10.1016/j.ceramint.2020.02.048.

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23

Jin, Yong, Shigeo Yasuhara, Tetsuhide Shimizu, and Ming Yang. "Deposition of Boron Nitride Films by Filament-Assisted CVD Using Tris(Bimethylamino)Borane Precursor." Key Engineering Materials 661 (September 2015): 142–48. http://dx.doi.org/10.4028/www.scientific.net/kem.661.142.

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Boron nitride films were deposited on silicon substrate by a hot filament assisted chemical vapor deposition (HFCVD) system. The tris (dimethylamino) borane (B[N(CH3)2]3) was used as the single source precursor which has both the boron and nitrogen source, ammonia gas was used as the assisted gas to increase the nitrogen concentration in the films. The films deposited by different ratios of precursor to ammonia gas flow rate and filament temperatures were investigated. The boron-carbon-nitrogen (BCN) compound films were deposited under lower filament temperature. With increasing the ammonia gas flow rate, the carbon concentration in the films decreased. Fourier transform infrared spectroscopy (FT-IR) and transmission electron microscopy (TEM) image reveal that hexagonal boron nitride (hBN) films were deposited at the higher filament temperature of 2000°C. Moreover, the crystallization degree of the films became better with the filament temperature increased.

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24

Zhang, Yi, Wei Wang, Zhaowen Hu, Kun Liu, and Jingjing Chang. "Investigation of hBN powder lubricating characteristics of die steel H13–ceramic Si3N4 tribopair at 800 ℃." Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology 234, no. 4 (August 31, 2019): 622–31. http://dx.doi.org/10.1177/1350650119873252.

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In the background that hot-working die steels have been widely used in the hot stamping process of high strength steels for manufacturing car bodies and parts, solid lubricant materials are promising for decreasing the friction and wear on die surfaces at high temperatures. In this work, hexagonal boron nitride was used to lubricate the sliding interface of ceramic Si3N4 against die steel H13 at 800 ℃, and its frictional behavior was investigated at different contact pressures and rotating speeds by pin-on-disk testing. Tribological characteristics of hexagonal boron nitride solid lubricant were analyzed through 3D laser scanning confocal microscope and energy-dispersive spectroscopy. The results show that the wear behavior of hexagonal boron nitride powder lubricating film featured two stages: gradual undermining and complete damage. The formation-broken dynamic cycle of partial lubricating film constantly occurred at the frictional interface until the film was completely destroyed. In a short period, the hexagonal boron nitride lubricant can reduce the friction coefficient efficiently compared with dry friction, and the die substrate showed basically no abrasion because a layer of plasticity accumulated on the die surface, which protected the substrate. In a certain range, the boundary-lubricating film became damaged rapidly with increasing load, and high speed was not conducive to the stability of the lubricating film.

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25

Berns, D. H., and M. A. Cappelli. "Low Energy Ion Impact-enhanced Growth of Cubic Boron Nitride in a Supersonic Nitrogen/argon Plasma Flow." Journal of Materials Research 12, no. 8 (August 1997): 2014–26. http://dx.doi.org/10.1557/jmr.1997.0271.

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This paper describes the growth and analysis of cubic boron nitride films in a low-density, supersonic nitrogen/argon plasma flow into which boron trichloride gas was injected. Both hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) were synthesized using this apparatus. Phase selectivity is obtained by applying a relatively low negative bias voltage to the substrate. All of the films described in this paper were grown on {100} silicon wafers at substrate temperatures varying from 400–700 °C. Boron nitride films with greater than 90% cubic phase were successfully synthesized with this method. The films were analyzed using infrared spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. The volumetric percentages of the hexagonal and cubic phases were determined from model fits to the infrared transmission spectra of the films. X-ray photoelectron spectroscopy provided qualitative evidence for the presence and/or lack of sp2 bonding through the identification of a π-plasmon feature in the spectra. Infrared reflectance spectra are used to provide insight into the growth mechanisms leading to c-BN formation and have revealed features which are not present in the transmission spectra, specifically the 1305 cm−1 LO mode of c-BN and the 1610 cm−1 LO mode of h-BN. The mean ion energies involved with this bias-enhanced chemical vapor deposition (CVD) process are much lower than the ion energies in traditional physical vapor deposition (PVD) processes; however, the ion fluxes (currents) used in this CVD process are at least an order of magnitude higher, resulting in a total momentum transfer to the deposited atoms through ion bombardment that is at least equal to or greater than that reported for many ion-enhanced PVD processes.

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26

Esteve-Adell, Ivan, Jinbao He, Fernando Ramiro, Pedro Atienzar, Ana Primo, and Hermenegildo García. "Catalyst-free one step synthesis of large area vertically stacked N-doped graphene-boron nitride heterostructures from biomass source." Nanoscale 10, no. 9 (2018): 4391–97. http://dx.doi.org/10.1039/c7nr08424b.

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A procedure for the one-step preparation of films of few-layer N-doped graphene on top of nanometric hexagonal boron nitride sheets based on the pyrolysis at 900 °C under an inert atmosphere is reported.

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27

Medlin, D. L., K. F. McCarty, D. A. Buchenauer, D. Dibble, and D. B. Poker. "Microstructure in Nanophase and Amorphous Boron-Based Thin Films." Microscopy and Microanalysis 4, S2 (July 1998): 710–11. http://dx.doi.org/10.1017/s1431927600023679.

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Boron-based thin film materials have numerous uses ranging from application as hard and refractory protective coatings to potential employment in wide-band gap semiconductor electronics. Of particular interest are the boron carbides, nitrides, oxides, and phosphides. These compounds exhibit a broad range of structural and bonding variations. The crystalline form of elemental boron is based on an arrangement of 12-atom boron icosahedra positioned at the vertices of a rhombohedral lattice. Related materials, such as B4C, and B12P, also possess structures closely related to this icosahedrally coordinated prototype. However, the structural coordination of the boron carbides and phosphides will vary with composition. For instance, BP possesses a tetrahedrally coordinated zinc-blende structure, and the carbon-rich boron carbides will form in a graphitic structure. Boron nitride has the added complication that for the same composition (BN) multiple bonding and polytypic variations are possible: both soft, graphitic sp2-rich (e.g., hexagonal and rhombohedral BN) and hard, diamond-like sp3-rich phases (e.g., cubic and wurtzitic BN) can be formed.

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28

Popkova, Anna A., Ilya M. Antropov, Johannes E. Fröch, Sejeong Kim, Igor Aharonovich, Vladimir O. Bessonov, Alexander S. Solntsev, and Andrey A. Fedyanin. "Optical Third-Harmonic Generation in Hexagonal Boron Nitride Thin Films." ACS Photonics 8, no. 3 (February 24, 2021): 824–31. http://dx.doi.org/10.1021/acsphotonics.0c01759.

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29

Xiao Hua-Ping, Chen Yuan-Ping, Yang Kai-Ke, Wei Xiao-Lin, Sun Li-Zhong, and Zhong Jian-Xin. "Electronic properties of disordered bilayer hexagonal boron nitride quantum films." Acta Physica Sinica 61, no. 17 (2012): 178101. http://dx.doi.org/10.7498/aps.61.178101.

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30

Franke, E., H. Neumann, M. Schubert, T. E. Tiwald, J. A. Woollam, and J. Hahn. "Infrared ellipsometry on hexagonal and cubic boron nitride thin films." Applied Physics Letters 70, no. 13 (March 31, 1997): 1668–70. http://dx.doi.org/10.1063/1.118655.

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31

Ranjan, A., F. M. Puglisi, N. Raghavan, S. J. O'Shea, K. Shubhakar, P. Pavan, A. Padovani, L. Larcher, and K. L. Pey. "Random telegraph noise in 2D hexagonal boron nitride dielectric films." Applied Physics Letters 112, no. 13 (March 26, 2018): 133505. http://dx.doi.org/10.1063/1.5022040.

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32

Lu, Guangyuan, Tianru Wu, Haomin Wang, Peng Yang, Zhiyuan Shi, Chao Yang, and Xiaoming Xie. "Synthesis of continuous hexagonal boron nitride films on alloy substrate." Materials Letters 196 (June 2017): 252–55. http://dx.doi.org/10.1016/j.matlet.2017.03.075.

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33

He, B., W. J. Zhang, Z. Q. Yao, Y. M. Chong, Y. Yang, Q. Ye, X. J. Pan, et al. "p-type conduction in beryllium-implanted hexagonal boron nitride films." Applied Physics Letters 95, no. 25 (December 21, 2009): 252106. http://dx.doi.org/10.1063/1.3276065.

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34

Cross, Nicholas, Ali Mohsin, Lei Liu, Gong Gu, and Gerd Duscher. "Layer Count Mapping of Multilayer Hexagonal Boron Nitride Thin Films." Microscopy and Microanalysis 23, S1 (July 2017): 412–13. http://dx.doi.org/10.1017/s1431927617002744.

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35

Watanabe, Shuichi, Shojiro Miyake, and Masao Murakawa. "Tribological properties of cubic, amorphous and hexagonal boron nitride films." Surface and Coatings Technology 49, no. 1-3 (December 1991): 406–10. http://dx.doi.org/10.1016/0257-8972(91)90091-a.

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36

Song, Yangxi, Changrui Zhang, Bin Li, Da Jiang, Guqiao Ding, Haomin Wang, and Xiaoming Xie. "Triggering the atomic layers control of hexagonal boron nitride films." Applied Surface Science 313 (September 2014): 647–53. http://dx.doi.org/10.1016/j.apsusc.2014.06.040.

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37

Beghi, M. G., C. E. Bottani, A. Miotello, and P. M. Ossi. "Vibrational spectroscopy of mixed hexagonal-cubic boron nitride thin films." Thin Solid Films 308-309 (October 1997): 107–12. http://dx.doi.org/10.1016/s0040-6090(97)00380-5.

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38

Bokdam, Menno, Petr A. Khomyakov, Geert Brocks, Zhicheng Zhong, and Paul J. Kelly. "Electrostatic Doping of Graphene through Ultrathin Hexagonal Boron Nitride Films." Nano Letters 11, no. 11 (November 9, 2011): 4631–35. http://dx.doi.org/10.1021/nl202131q.

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39

Reisse, G., and S. Weissmantel. "Pulsed laser deposition of hexagonal and cubic boron nitride films." Applied Physics A: Materials Science & Processing 69, no. 7 (December 1, 1999): S749—S753. http://dx.doi.org/10.1007/s003390051521.

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40

Kotova, Lyubov V., Linar A. Altynbaev, Maria O. Zhukova, Bogdan R. Borodin, Vladimir P. Kochereshko, Anna Baldycheva, and Benjamin T. Hogan. "Boron Nitride Thin Films with Anisotropic Optical Properties from Microscale Particle Density Distributions." Coatings 12, no. 10 (October 18, 2022): 1571. http://dx.doi.org/10.3390/coatings12101571.

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Unusual optical anisotropy was experimentally observed in hexagonal boron nitride thin films produced from bulk boron nitride via ultrasonication. Both the linear and circular polarisation demonstrated a well-defined single axis of anisotropy over a large sample area. To understand this phenomenon, we employed statistical analysis of optical microscopy images and atomic force microscopy to reveal an ordered particle density distribution at the microscopic level corresponding to the optical axis observed in the polarisation data. The direction of the observed ordering matched the axis of anisotropy. Hence, we attribute the measured optical anisotropy of the thin films to microscopic variations in the particle density distribution.

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41

King, Sean W., Robert J. Nemanich, and Robert F. Davis. "Cleaning of pyrolytic hexagonal boron nitride surfaces." Surface and Interface Analysis 47, no. 7 (May 26, 2015): 798–803. http://dx.doi.org/10.1002/sia.5781.

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42

Kobayashi, Hirokazu, and Atsushi Fukuoka. "Hexagonal Boron Nitride for Adsorption of Saccharides." Journal of Physical Chemistry C 121, no. 32 (August 2, 2017): 17332–38. http://dx.doi.org/10.1021/acs.jpcc.7b05077.

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43

Albar, Juan D., Vladimir V. Korolkov, Matteo Baldoni, Kenji Watanabe, Takashi Taniguchi, Elena Besley, and Peter H. Beton. "Adsorption of Hexacontane on Hexagonal Boron Nitride." Journal of Physical Chemistry C 122, no. 48 (November 13, 2018): 27575–81. http://dx.doi.org/10.1021/acs.jpcc.8b10167.

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44

Hurd, J. L., D. L. Perry, B. T. Lee, K. M. Yu, E. D. Bourret, and E. E. Haller. "Polycrystalline hexagonal boron nitride films on SiO2 for III–V semiconductor applications." Journal of Materials Research 4, no. 2 (April 1989): 350–54. http://dx.doi.org/10.1557/jmr.1989.0350.

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Isotropic hexagonal BN (h-BN) films were deposited on SiO2 crucibles used for synthesis of GaAs. Deposited films were analyzed for composition, morphology, and growth rates using proton resonant scattering, optical absorption, x-ray and electron diffraction, and transmission electron microscopy. The silicon concentration of GaAs synthesized in BN coated crucibles was approximately one order of magnitude higher than that for GaAs synthesized in uncoated crucibles under identical synthesis conditions.

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45

Zhuang, Pingping, Weiyi Lin, Binbin Xu, and Weiwei Cai. "Oxygen-assisted synthesis of hexagonal boron nitride films for graphene transistors." Applied Physics Letters 111, no. 20 (November 13, 2017): 203103. http://dx.doi.org/10.1063/1.5001790.

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46

Tay, Roland Yingjie, Siu Hon Tsang, Manuela Loeblein, Wai Leong Chow, Guan Chee Loh, Joo Wah Toh, Soon Loong Ang, and Edwin Hang Tong Teo. "Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates." Applied Physics Letters 106, no. 10 (March 9, 2015): 101901. http://dx.doi.org/10.1063/1.4914474.

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Gupta, Siddharth, Ritesh Sachan, and Jagdish Narayan. "Nanometer-Thick Hexagonal Boron Nitride Films for 2D Field-Effect Transistors." ACS Applied Nano Materials 3, no. 8 (July 29, 2020): 7930–41. http://dx.doi.org/10.1021/acsanm.0c01416.

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Sutter, P., J. Lahiri, P. Zahl, B. Wang, and E. Sutter. "Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films." Nano Letters 13, no. 1 (December 20, 2012): 276–81. http://dx.doi.org/10.1021/nl304080y.

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Basu, Nilanjan, Moram Sree Satya Bharathi, Manju Sharma, Kanchan Yadav, Avanish Singh Parmar, Venugopal Rao Soma, and Jayeeta Lahiri. "Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material." Nanomaterials 11, no. 3 (March 2, 2021): 622. http://dx.doi.org/10.3390/nano11030622.

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Abstract:

Increasingly, two-dimensional (2D) materials are being investigated for their potential use as surface-enhanced Raman spectroscopy (SERS) active substrates. Hexagonal Boron Nitride (hBN), a layered 2D material analogous to graphene, is mostly used as a passivation layer/dielectric substrate for nanoelectronics application. We have investigated the SERS activity of few-layer hBN film synthesized on copper foil using atmospheric pressure chemical vapor deposition. We have drop casted the probe molecules onto the hBN substrate and measured the enhancement effect due to the substrate using a 532 nm excitation laser. We observed an enhancement of ≈103 for malachite green and ≈104 for methylene blue and rhodamine 6G dyes, respectively. The observed enhancement factors are consistent with the theoretically calculated interaction energies of MB > R6G > MG with a single layer of hBN. We also observed that the enhancement is independent of the film thickness and surface morphology. We demonstrate that the hBN films are highly stable, and even for older hBN films prepared 7 months earlier, we were able to achieve similar enhancements when compared to freshly prepared films. Our detailed results and analyses demonstrate the versatility and durability of hBN films for SERS applications.

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Antonova, Irina V., Marina B. Shavelkina, Artem I. Ivanov, Dmitriy A. Poteryaev, Nadezhda A. Nebogatikova, Anna A. Buzmakova, Regina A. Soots, and Vladimir A. Katarzhis. "Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics." Nanomaterials 12, no. 10 (May 17, 2022): 1703. http://dx.doi.org/10.3390/nano12101703.

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Abstract:

The structure and electric properties of hexagonal boron nitride (h-BN):graphene composite with additives of the conductive polymer PEDOT:PSS and ethylene glycol were examined. The graphene and h-BN flakes synthesized in plasma with nanometer sizes were used for experiments. It was found that the addition of more than 10−3 mass% of PEDOT:PSS to the graphene suspension or h-BN:graphene composite in combination with ethylene glycol leads to a strong decrease (4–5 orders of magnitude, in our case) in the resistance of the films created from these suspensions. This is caused by an increase in the conductivity of PEDOT:PSS due to the interaction with ethylene glycol and synergetic effect on the composite properties of h-BN:graphene films. The addition of PEDOT:PSS to the h-BN:graphene composite leads to the correction of the bonds between nanoparticles and a weak change in the resistance under the tensile strain caused by the sample bending. A more pronounced flexibility of the composite films with tree components is demonstrated. The self-organization effects for graphene flakes and polar h-BN flakes lead to the formation of micrometer sized plates in drops and uniform-in-size nanoparticles in inks. The ratio of the components in the composite was found for the observed strong hysteresis and a negative differential resistance. Generally, PEDOT:PSS and ethylene glycol composite films are promising for their application as electrodes or active elements for logic and signal processing.

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