Dissertations / Theses: 'Hexagonal Boron Nitride Films'

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Alharbi, Abdulaziz. "Deformation of hexagonal boron nitride." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/deformation-of-hexagonal-boron-nitride(6c6013c4-8c17-4dec-b250-ed3f0baea7ed).html.

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Boron nitride (BN) materials have unique properties, which has led to interest in them in the last few years. The deformation of boron nitride materials including hexagonal boron nitride, boron nitride nanosheets (BNNSs) and boron nitride nanotubes have been studied by Raman spectroscopy. Both mechanical and liquid exfoliations were employed to obtain boron nitride nanostructures. Boron nitride glass composites were synthesised and prepared in thin films to be deformed by bending test in-situ Raman spectroscopy. Hexagonal boron nitride in the form of an individual flake and as flakes dispersed in glass matrices has been deformed and Raman measurement shows its response to strain. The shift rates were, -4.2 cm-1/%, -6.5 cm-1/% for exfoliated h-BN flake with thick and thin regions and -7.0 cm-1/%, -2.8 cm-1/% for the h-BN flakes in the h-BN/ glass (I) and glass (II) composites. Boron nitride nanosheets (BNNSs) shows a G band Raman peak at 1367.5 cm-1, and the deformation process of BNNSs/ glass composites gives a shift rate of -7.65 cm-1/% for G band. Boron nitride nanotubes (BNNTs) have a Raman peak with position at 1368 cm-1, and their deformation individually and in composites gives Raman band shift rates of -25.7 cm-1/% and -23.6 cm-1/%. Glass matrices shows compressive stresses on boron nitride fillers and this was found as an upshift in the frequencies of G band peak of boron nitride materials. GrÃ¼neisen parameters of boron nitride (BN) were used to calculate the residual strains in glass matrices of BNNSs nanocomposites as well as to estimate the band shift rates which found to be in agreement with the experimental shift rate of bulk BN and BNNTs.

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Camurlu, Hasan Erdem. "Carbothermic Production Of Hexagonal Boron Nitride." Phd thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/3/12607808/index.pdf.

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Formation of hexagonal boron nitride (h-BN) by carbothermic reduction of B2O3 under nitrogen atmosphere at 1500oC was investigated. Reaction products were subjected to powder X-ray diffraction analysis, chemical analysis and were examined by SEM. B4C was found to exist in the reaction products of the experiments in which h-BN formation was not complete. One of the aims of this study was to investigate the role of B4C in the carbothermic production of h-BN. For this purpose, conversion reaction of B4C into h-BN was studied. B4C used in these experiments was produced in the same conditions that h-BN was formed, but under argon atmosphere. It was found that formation of h-BN from B4C&ndash
B2O3 mixtures was slower than activated C&ndash
B2O3 mixtures. It was concluded that B4C is not a necessary intermediate product in the carbothermic production of h-BN. Some additives are known to catalytically affect the h-BN formation. The second aim of this study was to examine the catalytic effect of some alkaline earth metal oxides and carbonates, some transition metal oxides and cupric nitrate. It was found that addition of 10wt% CaCO3 into the B2O3+C mixture was optimum for increasing the rate and yield of h-BN formation and decreasing the B4C amount in the products and that the reaction was complete in 2 hours. CaCO3 was observed to be effective in increasing the rate and grain size of the formed h-BN. Addition of cupric nitrate together with CaCO3 provided a further increase in the size of the h-BN grains.

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Khan, Aamar Farooq. "The electrochemistry of 2D hexagonal boron nitride." Thesis, Manchester Metropolitan University, 2018. http://e-space.mmu.ac.uk/620319/.

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Since the discovery of the unique physical properties of graphene, research has intensified in the field of two-dimensional (2D) nanomaterial electrochemistry. Indeed, newly emerging 2D materials such as 2D-hexagonal boron nitride (2D-hBN) have the potential to transform the field of electrochemistry when implemented as a next generation electrode material. This thesis reports on the electrochemical applicability of utilising 2D-hBN, previously considered non-electroactive, as a novel electrode material. Also considered is the effect of the fabrication process of 2D-hBN when employed towards a range of electrochemical applications. Chapter 1 gives an overview of the general electrochemical concepts that concern this thesis. Chapter 2 offers an insight into recent 2D materials electrochemistry literature regarding, first, graphene and then 2D-hBN. From this, successive chapters follow the development and investigation of 2D-hBN, formed via differing synthesis techniques, thus enabling a truer reflection of 2D-hBN as an electrode material to be achieved. Chapter 3 details the relevant experimental information and the full physicochemical characterisation of the different 2D-hBN materials employed within this thesis. Chapters 4 and 5 utilise surfactant-free (pristine) 2D-hBN, where pristine 2D-hBN is ‘electrically wired’ upon a suitable electrode surface. Chapter 4 reveals for the first time that pristine 2D-hBN gives rise to beneficial electrochemical behaviour towards the oxygen reduction reaction (ORR) when immobilised upon a graphitic substrate. Chapter 5 explores pristine 2D-hBN towards a biological approach in the sensing of dopamine (DA) and its common interferents ascorbic acid (AA) and uric acid (UA). Pristine 2D-hBN exhibits a beneficial electrocatalytic effect towards the detection of dopamine when immobilised upon a graphitic substrate. This observed beneficial effect upon the utilisation of pristine 2D-hBN has not previously been reported in the literature when supported upon any electrode. Both chapters implement ‘mass coverage’ studies of 2D-hBN, an often overlooked parameter within the literature Chapters 6 and 7 utilise surfactant-exfoliated 2D-hBN and compare the effect of the fabrication process of 2D-hBN (pristine vs. surfactant-exfoliated) upon the observed electrochemistry towards the ORR, capacitance applications and the sensing of dopamine, via a dropcasting electrode modification approach. Chapter 6 explores surfactant-exfoliated 2D-hBN towards the ORR and capacitance applications for the first time. The surfactant-exfoliated 2D-hBN nanosheets are immobilised upon graphitic screen-printed electrodes (SPEs) with ‘mass coverage’ studies performed and the observed electrochemical response is compared to the surfactant-free pristine 2D-hBN approach. Chapter 7 explores surfactant-exfoliated 2D-hBN as a potential electrochemical sensing platform towards the electroanalytical sensing of dopamine (DA) in the presence of the common interferents, ascorbic acid (AA) and uric acid (UA) for the first time. Surfactant exfoliated 2D-hBN is electrically wired via a drop-casting modification process onto SPEs and the observed electrochemical response is compared to the surfactant-free (pristine) 2D-hBN approach. The performance of these surfactant-exfoliated 2D-hBN modified SPEs are critically evaluated upon the implementation of ‘mass coverage studies. Chapter 8 explores for the first time a low cost and reproducible approach for producing 2D Hexagonal Boron Nitride (2D-hBN) electrochemical screen-printed platforms (hBN-SPEs). These novel hBN-SPEs are explored as a potential electrocatalyst towards the ORR. This fabrication approach is compared to the drop casting technique of pristine and surfactant-exfoliated 2D-hBN utilised towards the ORR, thus offering an alternative approach. This thesis demonstrates for the first time that 2D-hBN is electroactive when immobilised upon a graphitic substrate towards a range of applications. It is also shown that fabrication process in the production of 2D-hBN can affect the observed electrochemistry, thus control experiments must be undertaken to truly understand the impact of this material.

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Ayoob, Raed. "Dielectric properties of hexagonal boron nitride polymer nanocomposites." Thesis, University of Southampton, 2017. https://eprints.soton.ac.uk/417272/.

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There is a growing research interest in polymer nanocomposite materials due to their potential in enhancing dielectric properties. However, a considerable amount of variability exists in the literature regarding the electrical performance of polymer nanocomposites, and therefore the underlying mechanisms underpinning their electrical properties are still far from fully understood. Possible reasons for the existing inconsistencies could be due to different material preparation techniques, different nanoparticle dispersion states, unknown filler content, inconsistent sample storage conditions, and unknown water level content in the samples. Determining the principal factors that dominate the electrical behaviour of polymer nanocomposites could allow engineers to tailor the electrical properties of dielectrics for their specific application. As a result, the work reported in this thesis was mainly set out to explore the factors governing the electrical properties of polymer nanocomposites such that the inconsistencies in the literature can be better understood, and consequently eliminated. This thesis investigated the performance of hexagonal boron nitride (hBN) nanocomposites based on two thermoplastic polymers: polystyrene and polyethylene. Prior to producing any nanocomposites, the hBN particles were characterised using different techniques. The characterisation primarily revealed that the boron nitride particles are in the hexagonal form and the surface of hBN contains a scarce amount of hydroxyl groups. Polystyrene nanocomposites were prepared containing identical amounts of hBN dispersed in different solvents in an attempt to obtain different dispersion states, as a result of different hBN/solvent interactions. The effect of solvent processing was negligible on the dispersion state of the hBN in the polystyrene; no observable difference in the dispersion and electrical properties was reported although the presence of hBN resulted in a slight increase in the breakdown strength relative to the unfilled polystyrene. A range of polyethylene nanocomposites were produced containing different amounts of hBN to understand the effect of the dispersion or aggregation state of the hBN on the breakdown strength. The results revealed that the nanocomposites, regardless of the morphology, exhibited a monotonic increase in breakdown strength with increasing hBN content from 2 wt % to 30 wt %, while maintaining the low dielectric losses of the unfilled polyethylene. While the hBN was found to have a strong nucleating effect on the polyethylene, it was determined that the local change in morphology was not the cause of the enhanced breakdown strength as both the polyethylene nanocomposites obtained by rapid crystallisation, where the development of spherulites was suppressed, and the amorphous polystyrene nanocomposites, also exhibited an improved breakdown strength. Further experiments indicated that the polyethylene nanocomposites did not absorb any moisture from the environment in ambient conditions, and absorbed a very small amount of water even in the 30 wt % polyethylene/hBN nanocomposite when completely immersed in water. Dielectric spectroscopy measurements revealed that the surface hydroxyl groups on the hBN are most likely located only on the edge surfaces of the hBN rather than basal surfaces. The water was most likely loosely bound to the hBN particles, where local water clusters formed. It was remarkable that a percolating water network was not formed in a nanocomposite consisting of an already percolating hBN network, which was largely attributed to the surface chemistry of hBN. Despite the presence of water in the system, the hBN nanocomposites continued to exhibit an enhanced breakdown strength in comparison to the unfilled polyethylene. Therefore, this thesis demonstrated that the electrical behaviour of polymer nanocomposites is most likely dominated by the surface state of the nanoparticles and how the particles interact with the charge carriers; any other effects due to local morphological changes or nanoparticle dispersion are considered to be secondary reasons for changes in the electrical properties.

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Pelini, Thomas. "Optical properties of point defects in hexagonal boron nitride." Thesis, Montpellier, 2019. http://www.theses.fr/2019MONTS139.

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L’objectif de cette thèse était d’explorer et de caractériser optiquement les défauts ponctuels dans le nitrure de bore hexagonal. L’étude des défauts dans ce semiconducteur revêt un intérêt fondamental à la fois pour la science des matériaux dans laquelle il joue un rôle clé de part sa nature lamellaire (matériau 2D) et sa stabilité thermique et chimique très élevées, et également dans le domaine des technologies quantiques où son grand gap (~ 6 eV) permet d’exploiter les défauts ponctuels profonds comme «atome artificiel» dans la matrice cristalline. Au cours de cette thèse, des défauts appartenant à deux gammes spectrales ont été étudiés: une première classe émettant dans le visible, et une seconde émettant dans la gamme ultraviolette.Ainsi, dans un premier temps, nous avons exploité un microscope confocal à balayage fonctionnant à l’ambiante et dans les longueurs d’onde visibles. La réalisation de cartes spatiales de photoluminescence a permis de mettre en évidence l’existence de points chauds de photoluminescence localisés, sous la limite de diffraction du microscope, et émettant autour de 600 nm (2 eV). Des mesures de corrélations temporelles de photons montre d’une part qu’il s’agit d’émetteurs quantiques uniques, et permet d’autre part de sonder la photo-dynamique de ces systèmes, en particulier aux très longues échelles de temps. Différents régimes de photo-stabilité sont observés et discutés. Enfin, l’étude en puissance a aussi été effectuée et montre qu’une part des émetteurs (~ 5%) sont photo-stables à haute puissance d’excitation optique et saturent à un taux d’émission de plusieurs millions de coups par seconde: ces défauts ponctuels constituent une source de photons uniques parmi les plus brillantes à température ambiante dans un système à l’état solide.Dans un second temps, nous avons exploré les défauts émettant dans la gamme ultraviolette. Un préalable à la maitrise et l’utilisation des défauts dans les semiconducteurs à des fins technologiques est la connaissance de leur origine chimique. Dans cette optique nous avons tout d’abord étudié les niveaux énergétiques superficiels et profonds d’échantillons de nitrure de bore hexagonal enrichis en carbone en combinant des mesures de macro-photoluminescence et de réflectivité. L’existence de nouvelles transitions optiquement actives est révélée (autour de 300 nm), et l’implication du carbone comme origine de ces transitions est discutée. L’étude approfondie de ces nouvelles émissions a requiert la réalisation d’un microscope confocal à balayage fonctionnant dans l’ultraviolet à 266 nm et à température cryogénique. Le design du microscope est détaillé, les difficultés de sa mise en oeuvre expliquées, et ses performances démontrées. Ce nouvel outil expérimental nous permet d’examiner avec précision les défauts profonds. En particulier, une étude est faite sur la corrélation spatiale de ces nouvelles raies avec celle du défaut ponctuel bien connu à 4.1 eV. Ensuite, nous avons utilisé des nouveaux échantillons dopés en carbone isotopiquement purifié comme stratégie pour déterminer la nature chimique du défaut à 4.1 eV. À travers cette tentative, nous avons mis en lumière l’inhomogénéité spatiale des caractéristiques optiques de cet émetteur. Enfin, dans la dernière partie, on tente d’isoler l’émission provenant d’un défaut unique à 4.1 eV. Pour cela, on utilise des flocons fins pré-caractérisés en microscopie électronique et contenant une faible densité d’émetteurs. Leur photostabilité est étudiée
The purpose of this thesis was to explore and caracterize optically the point defects in hexagonal boron nitride. The study of defects in this semiconductor is of fundamental importance firstly for the material science in which it plays a key role thanks to its lamellar structure (2D material) and its high thermal and chemical stability, and secondly for the quantum nanotechnology domain where its large bandgap (~ 6 eV) allows for exploiting deep levels point imperfections as «artificial atom» in the crystal lattice. During this thesis, defects in two spectral ranges have been studied: a first family emitting in the visible wavelengths, and a second one emitting in the ultraviolet range.Firstly, we made use of a scanning confocal microscope working in ambient conditions and at visible wavelengths. The recording of photoluminescence spatial maps permited to show the existence of localised hot spot of light, under the diffraction limit of the miscroscope, and emitting around 600 nm (2 eV). Time photon-correlation measurements revealed on one hand that we were dealing with single quantum emitters, and on the other hand allowed for probing the photodynamics of those systems, in particular at very long time-scale. Various photostability regimes are observed and discussed. Last but not least, power resolved study was also performed and demonstrated that a number of the emitters (~ 5%) are photo-stable at high excitation power and saturate at few millions counts per second: those point defects are one of the brightest single-photon source at room temperature in solid-state systems.Secondly, we explored the defects in the ultraviolet spectral range. A prerequisite to the engineering of defects in semiconductors for technological applications is the knowledge of their chemical origin. With this in mind, we studied shallow and deep levels in carbon-doped hBN samples by combining macro-photoluminescence and reflectance measurements. We showed the existence of new optically-active transitions (around 300 nm) and discussed the implication of carbon in these levels. The in-depth study of these levels have required the development of a new scanning micro-photoluminescence confocal microscope operating at 266 nm under cryogenic environment. The design and performances of the optical system are described, and the experimental challenges explained in details. Using this new setup, we went further into the examination of the deep levels. In particular, a study was carried out regarding the spatial correlation between these new spectral lines and the well-known point defect at 4.1 eV. Then, we used new crystals with isotopically-purified carbon doping as a strategy to investigate the long-standing question concerning the chemical origin of the 4.1 eV defect. Through this attempt, we brought to light the spatial dependence of the optical features for this specific emitter. Last but not least, we present our work dedicated to isolate the emission of a single 4.1 eV defect. We studied the photoluminescence of thin undoped flakes, pre-characterized with an electron microscope, that contain a low density of emitters, and inspected in particular their photostability in these thin crystals

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Krishna, Kumar Roshan. "High temperature quantum transport in graphene/hexagonal-boron nitride heterostructures." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/88867/.

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The past decade has seen a new paradigm in solid state physics, where a new class of layered crystals can be thinned down to a monolayer and exhibit drastic changes in their electronic and optical properties in comparison to their bulk counterpart. Graphene was the first, and certainly most outstanding, of this set of so called two-dimensional (2D) materials. Aside from its obvious appeal which earnt its discovery the 2010 Nobel Prize, the electronic properties of graphene are truly unique. Perhaps the most familiar is its linear electron dispersion which hosts quasi-particles that obey the Dirac equation. This has enabled the study of a plethora of transport phenomena, as well as the realisation of novel device architectures that will be used in the next generation electronics. In general, experimental signatures of electron transport are most prominent at liquid helium temperatures when lattice vibrations are weak, for example in quantum hall physics. In this Thesis, we explore the regime of intermediate temperatures where the physics of interest is strongest between 100 and 300 K. Equipped with the state of the art high quality graphene samples, we demonstrate novel electron transport unique to graphene. The experimental work consists of two themes. In the first work, we study hydrodynamic electron flow in graphene encapsulated with hexagonal boron nitride devices. At elevated temperatures, electron-electron collisions become significant, and the electron viscosity starts to influence the steady state current distribution in a variety of surprising ways. In the first work, we perform transport experiments on standard graphene hall bars in a unique measurement geometry which allows the detection of negative non-local voltages intrinsic to viscous flow. In another experiment, we study viscous electron flow through graphene nano-constrictions/classical point contacts. Here, we observed anomalous temperature dependence in the conductance measured across the constriction. Specifically, the conductance increases with increasing temperature and even exceeded the semi-classical limit which is expected for single-particle ballistic transport. The underlying mechanism originates from electron-electron collisions, which, counter-intuitively, act to enhance current flow. In the second work, we slightly change our experimental system by studying magneto transport in a graphene/hexagonal boron nitride superlattice. Owed to the large periodicity of the superlattice unit cell, these devices have allowed experimental observation of the long sought Hofstadter butterfly, which addresses the electronic dispersion of electrons in a periodic potential and magnetic field. Here, we again go to elevated temperatures, where all the spectral gaps related to Hofstadter butterflies are completely smeared, and instead find a new type of quantum oscillation. These new oscillations are periodic in 1/B with a frequency corresponding to one flux quantum piercing the superlattice unit cell. Whilst these oscillations are related to Hofstadter physics, they are in fact more primal in origin. The most fascinating feature is their robustness with respect to increasing temperature. The oscillations are easily observable at room temperature in fields as low as 3 T and still remained prominent at 373 K, the boiling point of water.

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Elias, Christine. "Optical spectroscopy of hexagonal boron nitride : from bulk to monolayer." Thesis, Montpellier, 2020. http://www.theses.fr/2020MONTS054.

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Le nitrure de bore hexagonal (h-BN) ou « graphite blanc » est un semiconducteur qui possède une large bande interdite (~ 6 eV) et dont la structure cristalline est proche de celle du graphite : elle est formée par des plans d’atomes arrangés en nid d’abeilles. La liaison entre les plans est de type Van-der-Waals. En 2004, h-BN a démontré sa capacité d’émettre de manière efficace de la lumière dans l’UV profond (~200 nm) et cela sur des cristaux massifs synthétisés au Japon (NIMS). Ces résultats ont attiré l’attention de la communauté scientifique des semiconducteurs pour la possibilité de pouvoir utiliser ce matériau comme une source de lumière pour des applications dans l’UV profond.La nature de la bande interdite dans h-BN massif a été un sujet de débat pendant plus de 12 ans et elle a été étudiée à la fois par des calculs théoriques et par des expériences. En 2016, le gap a été démontré de nature indirecte par des expériences de spectroscopie optique à 2-photons. Un exciton indirect et des recombinaisons assistées par phonons ont été observés par photoluminescence dans h-BN.Dans h-BN, comme dans d’autres matériaux 2D, en passant d’un système 3D (massif) à un système 2D (monocouche), la nature du gap change. Les calculs montrent un changement d’un gap indirect (massif) vers un gap direct (monocouche). Cette transition de gap indirect-direct n’a jamais été observée dans h-BN, et en conséquence les propriétés opto-électroniques de la monocouche n’ont jamais été étudiées. Durant cette thèse, nous avons étudié pour la première fois les propriétés optiques de la monocouche de BN (mBN) par spectroscopie optique (macro-PL et réflectivité) sur des échantillons de mBN épitaxiés par MBE à haute température sur des substrats de graphite (HOPG). Nos résultats ont démontré pour la première fois la possibilité de fabriquer une monocouche de BN (3.5 Å) par MBE. Nos mesures de spectroscopie optique ont démontré la présence d’une transition optique à 6.1 eV associée à un gap direct dans la mBN
Hexagonal boron nitride (h-BN) or “white graphite” is a semiconductor which has a wide bandgap (~ 6 eV) and whose crystalline structure is close to that of graphite: it is formed by planes of atoms arranged in a hexagonal form. The interaction between the planes is of Van-der-Waals type. In 2004, h-BN demonstrated its ability to efficiently emit light in the deep UV (~ 200 nm) in crystals synthesized in NIMS laboratory in JAPAN. These results have attracted the attention of the community of semiconductors to the possibility of being used as a source of light for deep UV applications.The nature of the band gap in bulk h-BN has been the subject of a debate for over 12 years and it has been studied by theoretical calculations and by experiments. In 2016, the gap was demonstrated to be indirect based on 2-photon spectroscopy measurements. Indirect exciton and phonon-assisted recombination were observed by photoluminescence in h-BN.In h-BN, like in other 2D materials, when changing from a 3D system (massive) to a 2D system (monolayer), the nature of the gap changes. The calculations show a change from an indirect gap (bulk) to a direct gap (monolayer). This indirect-direct gap transition has never been observed in h-BN, and consequently the opto-electronic properties of the monolayer have never been studied. During this thesis, we studied for the first time the optical properties of the BN monolayer (mBN) by performing optical spectroscopy (macro-PL and reflectivity) in mBN samples grown by MBE at high temperature on graphite substrates (HOPG).Our results demonstrated for the first time the possibility to grow mBN (3.5 Å) by MBE technique. Our optical measurements demonstrated the presence of an optical transition at 6.1 eV associated to the direct gap in the mBN

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Akyildiz, Ugur. "Effect Of Sodium Carbonate On Carbothermic Formation Of Hexagonal Boron Nitride." Master's thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612579/index.pdf.

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Effect of Na2CO3 on formation of hexagonal boron nitride (h-BN) by carbothermic method has been studied by subjecting B2O3-C and Na2CO3-added B2O3-C mixtures to N2 (g) atmosphere. Na2CO3 amount in the mixtures was changed in the range of 0-40 wt. %. Time and temperature were used as experimental variables. Reaction products were analyzed by XRD and scanning electron microscope. Na2CO3 was found to increase both the amount and the particle size of h-BN similar to CaCO3 [1]. Na2CO3 was found to be less effective than CaCO3 in increasing the amount while it was more effective than CaCO3 in increasing the particle size of h-BN forming.

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Woods, Colin. "Investigations into the interfacial interaction of graphene with hexagonal boron nitride." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/investigations-into-the-interfacial-interaction-of-graphene-with-hexagonal-boron-nitride(de99f43b-790f-4a32-b696-060ed700a5bd).html.

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This thesis, submitted to the University of Manchester, covers a range of topics related to current research in two-dimensional materials under the title: 'Investigations into the interfacial interaction of graphene with hexagonal boron nitride.'In the last decade, two-dimensional materials have become a rich source of original research and potential applications. The main advantage lies in the ability to produce novel composite structures, so-called 'layered heterostructures', which are only a few atomic layers thick. One can utilise the unique properties of several species of crystal separately, or how they interact to realise a diverse range of uses. Two such crystals are graphene and hexagonal boron nitride. Hexagonal boron nitride has, so far, been used primarily as a substrate for graphene, allowing researchers to get the most out of graphene's impressive individual properties. However, in this thesis, the non-trivial van der Waals interaction between graphene and hexagonal boron nitride is examined. The interface potential reveals itself as a relatively large-scale, orientation-dependant superlattice, which is described in chapters 1 and 2.I In Chapter 4, the effect of this superlattice is examined by measurement of its effect upon the electrons in graphene, where its modulation leads to the creation of second and third generation Dirac points, revealing Hofstadter's Butterfly. As well as an excellent example of the physics possible with graphene, it also presents a new tool with which to create novel devices possessing tailored electronic properties. II In chapter 5, the consequential effect of the superlattice potential on the structure of graphene is studied. Results are discussed within the framework of the Frenkel-Kontorova model for a chain of atoms on a static background potential. Results are consistent with relaxation of the graphene structure leading to the formation of a commensurate ground state. This has exciting consequences for the production of heterostructures by demonstrating that alignment angle can have large effects upon the physical properties of the crystals. III In chapter 6, the van der Waals potential is shown to be responsible for the self-alignment of the two crystals. This effect is important for the fabrication of perfectly aligned devices and may lead to new applications based on nanoscale motion.

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Crane, Thomas Philip. "An NMR study of helium-3 adsorbed on hexagonal boron nitride." Thesis, Royal Holloway, University of London, 1998. http://digirep.rhul.ac.uk/items/1d14fa0b-8f29-7b7a-f32b-7c23bae45c35/1/.

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A Pulse-NMR study of helium-3 adsorbed on hexagonal boron-nitride (BN) powder has been performed. Structurally very similar to graphite, the exposed basalplanes present a very smooth, ideal adsorbing surface and lack its undesirable strong anisotropic diamagnetism. The relaxation times T1 and T2 of helium-3 have been measured as a function of coverage, temperature and frequency. A variety of two dimensional phases have been observed including: a fluid, commensurate solid, incommensurate solid plus a separate crystallite edge film. 2D melting in the incommensurate solid and an order-disorder transition in the commensurate solid have been observed. Evidence for a low temperature, low coverage fluid+commensurate solid coexistence which transforms to a single phase at higher temperatures plus a possible domain-wall phase at higher coverages has been identified. Coupled magnetic relaxation between the helium-3 film and substrate boron-11 spins has been noted. Boron-11 relaxation times have been measured against coverage and temperature. Heteronuclear relaxation is particularly important in the commensurate phases where it can dominate homonuclear spin-lattice relaxation, providing a powerful new probe of the low coverage phases. Based on the detailed theory of coupled magnetic dipolar relaxation a model has been developed which quantitatively describes all the important features of the data many of which are unique to the BN/3He system. Presented separately in chapter 8, it concludes the magnetic properties of registered helium 3 spins are dominated by 14N�� 3He cross relaxation processes, mediated by the €14N quadrupole splitting at FQ(14N) and driven by exchange motion in the film. Using a computer for unattended, real-time experimental control has allowed substantial quantities of high quality relaxation data to be taken. Off-line, automated, numerical analysis of raw spin-echo and processed data has been extensively used. Modelling relaxation data with a stretched-exponential function, h(t) = h(0) exp(ta/T1,2) has provided a exceptionally sensitive indicator of physical changes in the film.

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Yazbeck, Joseph. "Investigations of hexagonal boron nitride as a semiconductor for neutron detection." Thesis, Kansas State University, 2012. http://hdl.handle.net/2097/14163.

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Master of Science
Department of Mechanical and Nuclear Engineering
Jeffrey Geuther
William L. Dunn
The properties of hexagonal boron nitride (h-BN) as a semiconductor neutron detection medium were investigated. Single h-BN crystal domains were synthesized by the Chemical Engineering department at Kansas State University (KSU) using crystallization from molten metal solutions. At Texas Tech University (TTU), a detector was fabricated using epitaxial h-BN growth on a sapphire substrate where metallic micro-strip contacts 5 [mu]m apart and 5 nm thick where deposited onto the un-doped h-BN. In this research both the crystal domains synthesized at KSU and the detector fabricated at TTU were tested for neutron response. Neutron irradiation damage/effects were studied in pyrolytic h-BN by placing samples in the central thimble of the TRIGA MARK II reactor at KSU and irradiating at increasing neutron fluences. The domains synthesized at KSU as well as the detector fabricated at TTU showed no response to neutron activity on a MCA pulse height spectrum. Conductivity analysis showed abrupt increases in the conductivity of the pyrolytic h-BN at around a fluence of 10[superscript]1[superscript]4 neutrons per cm[superscript]2. Bandgap analysis by photoluminescence on the irradiated pyrolytic h-BN samples showed shifts in energy due to towards plane stacking disorders upon neutron irradiation. Future efforts may include the introduction of dopants in h-BN growth techniques for charge carrier transport improvement, and mitigation of plane stacking disorders.

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Zhou, Vivian. "Optical Spectroscopic Studies of Hexagonal Boron Nitride for Quantum Information Applications." Case Western Reserve University School of Graduate Studies / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=case1555257441049214.

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Nakhaie, Siamak. "Growth of graphene/hexagonal boron nitride heterostructures using molecular beam epitaxy." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/19190.

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Zweidimensionale (2D) Materialien bieten eine Vielzahl von neuartigen Eigenschaften und sind aussichtsreich Kandidaten für ein breites Spektrum an Anwendungen. Da hexagonales Bornitrid (h-BN) für eine Integration in Heterostrukturen mit anderen 2D Materialien geeignet ist, erweckte dieses in letzter Zeit großes Interesse. Insbesondere van-der-Waals-Heterostrukturen, welche h-BN und Graphen verbinden, weisen viele potenzielle Vorteile auf, verbleiben in ihrer großflächigen Herstellung von kontinuierlichen Filmen allerdings problematisch. Diese Dissertation stellt eine Untersuchung betreffend des Wachstums von h-BN und vertikalen Heterostrukturen von Graphen und h-BN auf Ni-Substraten durch Molekularstrahlepitaxie (MBE) vor. Zuerst wurde das Wachstum von h-BN mittels elementarer B- und N-Quellen auf Ni als Wachstumssubstrat untersucht. Kristalline h-BN-Schichten konnten durch Raman-spektroskopie nachgewiesen werden. Wachstumsparameter für kontinuierliche und atomar dünne Schichten wurden erlangt. Das Keimbildungs- und Wachstumsverhalten so wie die strukturelle Güte von h-BN wurden mittels einer systemischen Veränderung der Wachstumstemperatur und -dauer untersucht. Die entsprechenden Beobachtungen wie der Änderungen der bevorzugten Keimbildungszentren, der Kristallgröße und der Bedeckung des h-BN wurden diskutiert. Ein Wachstum von großflächigen vertikalen h-BN/Graphen Heterostrukturen (h-BN auf Graphen) konnte mittels einem neuartigen, MBE-basierenden Verfahren demonstriert werden, welche es h-BN und Graphen jeweils erlaubt sich in der vorteilhaften Wachstumsumgebung, welche von Ni bereitgestellt wird, zu formen. In diesem Verfahren formt sich Graphen an der Schnittstelle von h-BN und Ni durch Präzipitation von zuvor in der Ni-Schicht eingebrachten C-Atomen. Schließlich konnte noch ein großflächiges Wachstum von Graphen/h-BN-Heterostrukturen (Graphen auf h-BN) durch das direkte abscheiden von C auf MBE-gewachsenen h-BN gezeigt werden.
Two-dimensional (2D) materials offer a variety of novel properties and have shown great promise to be used in a wide range of applications. Recently, hexagonal boron nitride (h-BN) has attracted significant attention due to its suitability for integration into heterostructures with other 2D materials. In particular, van der Waals heterostructures combining h-BN and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. This thesis presents an investigation regarding the growth of h-BN and vertical heterostructures of graphene and h-BN on Ni substrates using molecular beam epitaxy (MBE). The growth of h-BN from elemental sources of B and N was investigated initially by using Ni as the growth substrate. The presence of crystalline h-BN was confirmed using Raman spectroscopy. Growth parameters resulting in continuous and atomically thin h-BN films were obtained. By systematically varying the growth temperature and time the structural quality as well as the nucleation and growth behavior of h-BN was studied. Corresponding observations such as changes in preferred nucleation site, crystallite size, and coverage of h-BN were discussed. Growth of h-BN/graphene vertical heterostructures (h-BN on graphene) over large areas was demonstrated by employing a novel MBE-based technique, which allows both h-BN and graphene to form in the favorable growth environment provided by Ni. In this technique, graphene forms at the interface of h-BN/Ni via the precipitation of C atoms previously dissolved in the thin Ni film. No evidence for the formation of BCN alloy could be found. Additionally, the suitability of ultraviolet Raman spectroscopy for characterization of h-BN/graphene heterostructures was demonstrated. Finally, growth of large-area graphene/h-BN heterostructures (graphene on h-BN) was demonstrated via the direct deposition of C on top of MBE-grown h-BN.

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Ozkenter, Ali Arda. "Effect Of Calcium Oxide Addition On Carbothermic Formation Of Hexagonal Boron Nitride." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/12610740/index.pdf.

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Hexagonal boron nitride (h-BN) formation by carbothermic reduction of B2O3 under nitrogen atmosphere at 1500°
C and effect of CaO addition into the initial B2O3 &
#8211
active C mixture were investigated during this study. Reaction products were characterized by powder X-ray diffraction, scanning electron microscopy (SEM) and quantitative chemical analysis. Main aim of this study was to investigate the presence of a second reaction mechanism that catalytically affects h-BN formation during CaO or CaCO3 addition into the initial mixture. It was found that similar to CaCO3 addition, CaO addition has a catalytic effect on carbothermic formation h-BN. In order to investigate the reaction mechanism experiments with B2O3 &
#8211
CaO mixtures without active carbon addition into the mixture were conducted. Furthermore nucleation of h-BN from calcium borate melts had been investigated and experiments were conducted with h-BN addition into CaO &
#8211
B2O3 mixtures. It was concluded that nucleation of h-BN in calcium borate slags under experimental conditions is not possible. Hexagonal BN should be present in the system in order to activate the second nitrogen dissolution followed by h-BN precipitation mechanism. Highest efficiency was achieved in the experiment conducted with CaCO3 addition and largest particle size was observed during the experiment conducted to investigate the effect of nucleation.

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15

He, Qinyue. "The Study of Comprehensive Reinforcement Mechanism of Hexagonal Boron Nitride on Concrete." Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc804976/.

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The addition of hexagonal boron nitride (h-BN) has introduced a comprehensive reinforcing effect to the mechanical and electrochemical properties of commercial concrete, including fiber reinforced concrete (FRC) and steel fiber reinforced concrete (SFRC). Although this has been proven effective and applicable, further investigation and study is still required to optimize the strengthen result which will involve the exfoliation of h-BN into single-layered nano sheet, improving the degree of dispersion and dispersion uniformity of h-BN into concrete matrix. There is currently no direct method to test the degree of dispersion of non-conductive particles, including h-BN, in concrete matrix, therefore it is necessary to obtain an analogous quantification method like SEM, etc. The reinforcing mechanism on concrete, including FRC and SFRC is now attracting a great number of interest thanks to the huge potential of application and vast demand across the world. This study briefly describes the reinforcing mechanism brought by h-BN. In this study, different samples under varied conditions were prepared according to the addition of h-BN and dispersant to build a parallel comparison. Characterization is mainly focused on their mechanical properties, corrosive performance and SEM analysis of the cross-section of post-failure samples.

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16

Yuan, Weiqiang. "Simulation of Hexagonal Boron Nitride Deep Ultra-Violet ac-Driven Electroluminescence Devices." Ohio University / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1586958083835764.

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17

Sperber, Jared L. "Investigations of hexagonal boron nitride: bulk crystals and atomically-thin two dimensional layers." Thesis, Kansas State University, 2016. http://hdl.handle.net/2097/32509.

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Master of Science
Department of Chemical Engineering
James H. Edgar
Hexagonal boron nitride has been used as an inert, refractory material with excellent resistance to thermal decomposition and oxidation for more than fifty years. In the past few years, hBN has been targeted for potential electrical and optical devices such as neutron detectors, ultraviolet light emitters, deep ultraviolet light detectors, and substrates for graphene and other atomically-thin two-dimensional materials. All of these potential applications benefit from high quality, single crystals, with thicknesses varying from nanometers to microns. This research was undertaken to investigate four aspects of hBN crystal growth and recovery. (1) In an effort to optimize hBN crystal growth from a nickel-chromium flux, a series of stepped cooling experiments were undertaken. The temperature profile was stepped in a way as to promote growth in both the a and c directions, at their optimal growth conditions. Crystals were found to be typically 100-500 µm across and thickness of approximately 20-30 µm with a pyramid-like crystal habit. (2) A method for the removal of hBN crystals prior to freezing of the metal flux was demonstrated using a specialized hot pressed boron nitride crucible capable of removing hBN crystals from the flux in situ. (3) Growth of isotopically pure hBN crystals was undertaken. By modifying the crucible material for solution growth, enrichment of hBN crystals over 90% was accomplished. (4) Exfoliation of hBN has many potential applications, specifically as graphene-hBN heterostructures where layers approaching thicknesses of single atoms are most effective surface to interact with graphene as an electronic device. Several methods were tested toward exfoliating a single crystal resulting in few-layered hexagonal boron nitride nanosheets. As a result of these investigations a greater understanding of hBN bulk growth, its isotopic enrichment, its recovery, and its exfoliation was obtained.

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18

Anutgan, Mustafa. "Investigation Of Plasma Deposited Boron Nitride Thin Films." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608611/index.pdf.

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Hexagonal boron nitride (h-BN) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD). Effects of heat treatment and source gases on the structure and physical properties are investigated. Chemical bonding is analyzed in comparison with the better understood isoelectronic carbon compound, graphite. It seems that the basic difference between h-BN and graphite arises from the different electronegativities of boron and nitrogen atoms. Optical absorptions in UV-visible range for crystalline and amorphous structures are outlined. The expressions used for the evaluation of mechanical stress induced in thin films are derived. The deposited films are considered to be turbostratic as they do not exhibit the characteristic optical absorption spectra of a crystal. A new system, stylus profilometer, is implemented and installed for thin film thickness and mechanical stress measurements. Hydrogen atom density within the films, estimated from FTIR spectroscopy, is found to be a major factor affecting the order and mechanical stress of the films. Heat treatment of the films reduces the hydrogen content, does not affect the optical gap and slightly increases the Urbach energy probably due to an increased disorder. Increasing the nitrogen gas flow rate in the source gas results in more ordered films. The virtual crystal of these films is detected to be unique. Relative bond concentrations of the constituent elements indicate a ternary boron-oxygen-nitrogen structure. The physical properties of h-BN such as high resistivity and wide band gap seem suitable for optoelectronic applications such as gate dielectrics in thin film transistors and light emitting devices in the blue region.

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19

Hui, Fei. "Chemical vapor deposition of hexagonal boron nitride and its use in electronic devices." Doctoral thesis, Universitat de Barcelona, 2018. http://hdl.handle.net/10803/663391.

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Dielectrics are insulating materials used in many different electronic devices (e.g. capacitors, transistors, barristors), and play an important role in all of them. In fact, the dielectric is probably the most critical element in most devices, as it is exposed to electrical fields that can degrade its performance. In this PhD thesis I have investigated the use of monolayer and multilayer hexagonal boron nitride (h-BN) as dielectric for electronic devices, as it is a 2D material with a band gap of ~5.9 eV. My work has mainly focused on the synthesis of the h-BN using chemical vapor deposition, the study of its intrinsic morphological and electrical properties at the nanoscale, and its performance as dielectric in different electronic devices, such as capacitors and memristors. We observe that monolayer and multilayer h-BN can be growth by CVD on Pt, Cu and Fe substrates. The main parameters affecting the growth of the h-BN are: i) a proper temperature determines the decomposition of the precursor. Lower temperatures will produce remaining particles and more defects in BN layer. ii) The flow rate of precursor/H2 influences the density of seeds. Excessive precursor will give rise to the formation of h-BN multilayer islands. iii) High vacuum and low pressure help to remove impurities in the tube furnace (e.g. oxygen, carbon), and therefore it produces better quality h-BN, i.e. uniform thickness with less defects. h-BN sheets grown on polycrystalline Pt substrates show different thicknesses depending on the crystallographic orientation at the surface of each Pt grain. This produces an undesired fluctuation on the leakage current from one Pt grain to another. However, the leakage current across the h-BN on the same Pt grain is very uniform, much more than that observed across amorphous HfO2 and TiO2 thin films. This phenomenon doesn't take place when growing the h-BN on Cu or Fe substrates. For example, the leakage current across h-BN grown on Cu substrates display small current variability among different Cu grains. The dielectric breakdown behavior in multilayer h-BN shows surface extrusion, similar to what happens in SiO2, HfO2 and Al2O3. However, monolayer h-BN keeps unaltered its structure even for harder breakdown events. The reason may be the extremely high thermal conductivity of monolayer h-BN. Multilayer h-BN shows random telegraph noise signals when applying constant voltage stresses, both at the device level and at the nanoscale. This strongly indicates the trapping and de-trapping of charges during the stress. This observation has been confirmed by the detection of charges at the dielectric breakdown location. The breakdown spot shows a singular ring-like structure that contains fixed negative charges, mobile negative charges, and positive fixed charges. The synthesis of h-BN on polycrystalline Fe substrates required longer cooling down times than when using Pt and Cu substrates. The reason is that the growth of h-BN on Fe substrates mainly takes place by surface precipitation mechanism, while on Pt and Cu substrates the mechanism is by surface-mediated reaction. Memristors with Ag/h-BN/Fe structure show both threshold resistive switching when the set is induced by applying positive voltage to the Ag electrode, and bipolar resistive switching when the set/reset processes are induced by applying negative/positive voltage to the Ag electrode. The reason should be that in threshold mode the filament is formed by Ag+ ions that penetrate in the h-BN stack, while in bipolar mode Fe+ ions penetrate in the h-BN stack. Ag+ ions show higher diffusivity than Fe+ ions and produce volatile switching.
Los dieléctricos son materiales aislantes utilizados en muchos dispositivos electrónicos (por ejemplo condensadores, transistores, baristores), en los que juegan un papel muy importante. En realidad, el dieléctrico es probablemente la parte más crítica en la gran mayoría de dispositivos electrónicos, ya que casi siempre está expuesto a campos eléctricos que pueden degradar sus prestaciones. El dióxido de silicio (SiO2) ha sido el material aislante tradicionalmente utilizado en la industria; sin embargo la miniaturización de los dispositivos requirió una reducción del grosor de los dieléctricos SiO2, lo que provocó un incremento dramático de la corriente de fugas y el fallo del dispositivo entero. Actualmente los dispositivos electrónicos más avanzados utilizan materiales aislantes con una constante dieléctrica alta (por ejemplo HfO2, Al2O3 y TiO2), y así no es necesario reducir tanto su grosor, lo que mantiene una baja corriente de fugas. Sin embargo, estos materiales muestran muchos problemas intrínsecos, y también una mala interacción con materiales adyacentes. Por lo tanto, la carrera para encontrar un material dieléctrico ideal para dispositivos electrónicos sigue abierta. En este contexto, los materiales bidimensionales se han convertido en una seria opción, no sólo por sus excelentes propiedades, sino también gracias al desarrollo de nuevos métodos de síntesis escalables. En esta tesis doctoral he investigado el uso de nitruro de boro hexagonal (h-BN), monocapa y multicapa, como material dieléctrico en dispositivos electrónicos, ya su banda de energías prohibidas es de ~5.9 eV. Mi trabajo se ha focalizado en la síntesis de h-BN mediante el método chemical vapor deposition, el estudio de sus propiedades morfológicas y eléctricas a escala nanométrica, y sus prestaciones como dieléctrico en diferentes dispositivos (condensadores y memristores). Nuestros experimentos indican que h-BN es un material dieléctrico muy fiable, y que es apto para su uso en dispositivos. Sus prestaciones dependen de diferentes parámetros, como el sustrato en el que ha sido crecido, su grosor, y los materiales usados como electrodos adyacentes. Además, h-BN muestra propiedades adicionales nunca observadas en dieléctricos tradicionales, como modulación de la resistividad volátil, lo que podría extender su uso a nuevas aplicaciones.

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Kahramansoy, Eylem. "Production Of Hexagonal Boron Nitride By Carbothermic Reduction Of Colemanite-boric Oxide Mixtures." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613595/index.pdf.

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Carbothermic production of hexagonal BN by using boric acid and ground colemanite mined from Bigadiç
Region in Turkey was investigated by subjecting pellets prepared from B2O3, activated carbon and colemanite mixtures to nitrogen gas at 1500°
C. Similar to CaCO3 addition, colemanite addition to the B2O3-C mixtures resulted in higher amounts of h-BN in the final products. As a result of the experiments conducted with colemanite and CaCO3 additions providing the same quantity of CaO to the initial mixtures, similar amounts of hexagonal BN in the reaction products were observed. As a result of the experiments conducted with different compositions of colemanite- B2O3- C mixtures, 5 wt % colemanite addition was determined to be the optimum composition giving the highest amount of hexagonal BN in the reaction products. Increasing duration of the experiments increased the amount and particle size of h-BN formed in the products. Optimum amount of colemanite addition resulted in higher amounts and coarser particles of h-BN in the products than the optimum amounts of CaCO3 addition.

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21

Fang, Wenjing Ph D. Massachusetts Institute of Technology. "Synthesis of bilayer graphene and hexagonal boron nitride by chemical vapor deposition method." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/103724.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 156-165).
The aim of this thesis is two-fold: the first is to develop a reliable method for synthesizing bilayer graphene using chemical vapor deposition (CVD) method and to understand the growth mechanism. The second part involves exploring methods of synthesizing hexagonal boron nitride (hBN). The successful isolation of monolayer graphene in 2004 has attracted many researchers to search for potential applications of graphene and other two-dimensional materials in electronic and optical devices. However, the Scotch-tape method sets contraints for such applications due to the limited size and randomized location of obtained flakes. Thus, synthesizing large-area, high-quality two dimensional materials is highly desirable. This thesis seeks to develop a method to produce both bilayers and hBN with large area by CVD method and to investigate the underlying growth mechanisms for better control over the thickness, uniformity and stacking orientation.
by Wenjing Fang.
Ph. D.

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22

López, Josué Jacob. "Characterization of nanostructured hexagonal boron nitride patterned via high-resolution ion beam lithography." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/111919.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 51-57).
The forefront of polariton research in two-dimensional (2D) materials focuses on pushing the limits of patterning 2D materials into nanoresonators and other nanophotonic structures that manipulate highly confined polaritons for technologically relevant near-IR and mid-IR applications. Furthermore, tuning the properties of hexagonal boron nitride, graphene, and other 2D materials in-plane and stacking them into heterostructures has the potential to create hybrid optical, electronic, thermal, and mechanical properties with a wealth of new functions. To fully tailor these novel properties, controlled nanoscale patterning of these and other van der Waals materials is essential. Moreover, it becomes imperative to understand how patterning and geometries modify the properties within each layer or introduce defects that affect the interfaces of layered 2D heterostructures. Herein, we demonstrate high-resolution patterning of h-BN via both helium and neon ion beams and pattern a h-BN grating with a 35 nm pitch and 20 nm feature size. We study varying degrees of nanostructuring and defects via Raman spectroscopy, photo-thermal microscopy, and scattering-type scanning near-field optical microscopy and observe complimentary information about the phonon modes and the absorption and scattering of light from such nanostructures. Specifically, we observe geometry and layer dependent photo-thermal expansion of h-BN nanostructures that are mediated by phonons. This work demonstrates a thorough understanding of directly patterned 2D materials with ion beams and demonstrates that far-field and near-field measurements are essential in understanding how the nanostructuring of 2D materials can tune their properties.
by Josué Jacob López.
S.M.

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Sanchez-Yamagishi, Javier Daniel. "Superlattices and quantum spin Hall states in graphene and hexagonal boron nitride heterostructures." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99289.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 159-178).
Two-dimensional (2d) layered materials, such as graphene and hexagonal boron nitride (hBN), can be isolated separately and then stacked together to form heterostructures with crystalline interfaces between the layers. In this thesis, I present a series of experiments which explore the quantum transport of electrons in heterostructures made from graphene and hBN. Depending on the relative alignment, or "twist", between the layers, a crystal of hBN can be either a non-perturbing substrate for the graphene, or a method to induce a band gap and superlattice potential for the graphene electrons. In the case of two stacked graphene layers, a relative twist can electronically decouple the layers from each other, despite a tiny 0.34nm interlayer spacing. This twist-dependent physics can be used to realize new electronic states in graphene, especially in the presence of strong magnetic fields and electron-electron interactions. By applying a strong tilted magnetic field to graphene which is decoupled from its hBN substrate, we are able to realize a quantum spin Hall state and measure its electronic properties. An analogous bilayer quantum spin Hall state is also realized in twisted bilayer graphene, by taking advantage of the twist decoupling between the layers and the effects of electron-electron interactions. A different set of experiments explores the competition of a magnetic field with the effects of the superlattice potential which arises when a graphene sheet is nearly aligned to its hBN substrates. The large superlattice potential allows us to study graphene transport in Hofstadter's butterfly-the fractal spectrum for electrons under the simultaneous influence of a lattice and a magnetic field.
by Javier Daniel Sanchez-Yamagishi.
Ph. D.

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24

Clubine, Benjamin. "Synthesis and characterization of bulk single crystal hexagonal boron nitride from metal solvents." Thesis, Kansas State University, 2012. http://hdl.handle.net/2097/13639.

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Master of Science
Department of Chemical Engineering
James H. Edgar
Boron nitride is a purely synthetic material that has been known for over 150 years but only recently has sparked interest as a semiconductor material due to its potential in ultraviolet lasing and neutron detection. Thin-layer hexagonal boron nitride (hBN) is probably most attractive as a complementary material to graphene during its intense research endeavors. But for hBN to be successful in the realm of semiconductor technology, methods for growing large single crystals are critical, and its properties need to be accurately determined. In this study, hBN crystals were grown from metal solvents. The effects of soak temperature, soak time, source materials and their proportions on hBN crystal size and properties were investigated. The largest crystals of hBN measured five millimeters across and about 30 micrometers thick by precipitation from BN powder dissolved in a nickel-chromium solvent at 1700°C. High temperatures promoted outward growth of the crystal along the a-axis, whereas low temperatures promoted growth along the c-axis. Crystal growth at high temperatures also caused bulk hBN to adopt a triangular habit rather than a hexagonal one. A previously unreported method of synthesizing hBN was proven successful by substituting BN powder with elemental boron and a nitrogen ambient. XRD and Raman spectroscopy confirmed hBN from solution growth to be highly crystalline, with an 8.0 cm[superscript]-1 FWHM of the Raman peak being the narrowest reported. Photoluminescence spectra exhibited peaks mid-gap and near the band edge, suggesting impurities and defects in the hBN samples. However, high-purity reactants and post-growth annealing showed promise for synthesizing semiconductor-grade hBN. Several etchants were explored for defect-selective etching of hBN. A molten eutectic mixture of KOH/NaOH was the most effective defect-selective etchant of hBN at temperatures of 430-450°C for about one minute. The two prevalent hexagonal etch pit morphologies observed were deep, pointed-bottom pits and shallow, flat-bottom pits. TEM and SAED confirmed basal plane twists and dislocations in hBN crystals, but due to the highly anisotropic nature of hBN, their existence may be inevitable no matter the growth technique.

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Cai, Jiaqi [Verfasser], and Carsten [Gutachter] Busse. "Monolayer hexagonal boron nitride: an ultra-thin insulator / Jiaqi Cai ; Gutachter: Carsten Busse." Siegen : Universitätsbibliothek der Universität Siegen, 2021. http://d-nb.info/1236754956/34.

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Chan, Chit-yiu. "Nucleation and growth of cubic boron nitride thin films /." access full-text access abstract and table of contents, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ap-b19887693a.pdf.

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Thesis (Ph.D.)--City University of Hong Kong, 2005.
"Submitted to Department of Physics and Materials Science in partial fulfillment of the requirements for the degree of Doctor of Philosophy" Includes bibliographical references (leaves 147-154)

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Law, Ka Cheong. "Temperature parameter at synthesis of cubic boron nitride films." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21174477a.pdf.

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Thesis (M.Sc.)--City University of Hong Kong, 2005.
At head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 1, 2006) Includes bibliographical references.

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Deyneka, Nataliya [Verfasser]. "Properties of nanocrystalline cubic boron nitride films / Nataliya Deyneka." Ulm : Universität Ulm. Fakultät für Naturwissenschaften, 2003. http://d-nb.info/1015354882/34.

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Todi, Vinit O. "Investigation of reactively sputtered boron carbon nitride thin films." Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5069.

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Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B[sub4]C, β-C[sub3]N[sub4]. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC[sub2]N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with K<3. BCN shows promise as a low dielectric constant material with good mechanical strength suitable to be used in newer CMOS technologies. For optical applications, the deposition of BCN coatings on polymers is a promising method for protecting the polymer surface against wear and scratching. BCN films have high optical transparency and thus can be used as mask substrates for X-ray lithography. Most of the efforts from different researchers were focused to deposit cubic boron nitride and boron carbide films. Several methods of preparing boron carbon nitride films have been reported, such as chemical vapor deposition (CVD), plasma assisted CVD, pulsed laser ablation and ion beam deposition. Very limited studies could be found focusing on the effect of nitrogen incorporation into boron carbide structure by sputtering. In this work, the deposition and haracterization of amorphous thin films of boron carbon nitride (BCN) is reported. The BCN thin films were deposited by radio frequency (rf) magnetron sputtering system. The BCN films were deposited by sputtering from a high purity B[sub4]C target with the incorporation of nitrogen gas in the sputtering ambient. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform BCN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 700ºC. Electrical and optical characteristics are also investigated with interesting results. The optical band gap of the films ranged from 2.0 eV - 3.1 eV and increased with N[sub2]/Ar gas flow ratio except at the highest ratio. The optical band gap showed an increasing trend when annealed at higher temperatures. The effect of deposition temperature on the optical and chemical compositions of the BCN films was also studied. The band gap increased with the deposition temperature and the films deposited at 500[degrees]C had the highest band gap. Dielectric constant was calculated from the Capacitance-Voltage curves obtained for the MOS structures with BCN as the insulating material. Aluminum was used as the top electrode and the substrate was p-type Si. Effect of N[sub2]/Ar gas flow ratio and annealing on the values of dielectric constant was studied and the dielectric constant of 2.5 was obtained for the annealed BCN films. This by far is the lowest value of dielectric constant reported for BCN film deposited by sputtering. Lastly, the future research work on the BCN films that will be carried out as a part of the dissertation is proposed.
ID: 030422822; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2011.; Includes bibliographical references (p. 112-130).
Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science

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Fong, Tsz Wang. "Surface roughness parameter at synthesis of cubic boron nitride films." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21174143a.pdf.

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Thesis (M.Sc.)--City University of Hong Kong, 2005.
At head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Aug. 31, 2006) Includes bibliographical references.

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31

Maranon, Walter Nasrazadani Seifollah. "Characterization of boron nitride thin films on silicon (100) wafers." [Denton, Tex.] : University of North Texas, 2007. http://digital.library.unt.edu/permalink/meta-dc-3942.

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Lorenzzi, Jean Carlos da Conceição. "Boron nitride thin films deposited by magnetron sputtering on Si3N4." Master's thesis, Universidade de Aveiro, 2007. http://hdl.handle.net/10773/2307.

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Mestrado em Ciência e Engenharia de Materiais
O Nitreto de boro é um material polimorfo, sendo as fases hexagonal (h-BN) ecúbicas (c-BN) as predominantes. A fase hexagonal do nitreto de boro apresenta uma estrutura em camadas sp2, semelhante a grafite, enquanto que a fase cúbica do nitreto de boro tem forte ligações sp3, como o diamante. O h- BN apresenta boas propriedades dieléctricas, é um material refractário, resistente a corrosão, é conhecido por ser um lubrificante sólido que tem aplicações na protecção de moldes de injecção e em outros processos mecânicos de elevadas temperaturas ou lubrificação em ambientes de elevada humidade. Contudo, o h-BN é extremamente macio. Em contraste, o c-BN apresenta excelentes propriedades térmicas, eléctricas e ópticas, sendo ainda um dos materiais conhecidos com dureza mais elevada (70 GPa). Além disso, c-BN apresenta propriedades superiores em relação ao diamante quando aplicado em ferramentas de corte na maquinagem de materiais ferrosos, devido a sua alta estabilidade química a altas temperaturas durante a maquinagem. Essa combinação de propriedades faz dele um forte candidato no campo das ferramentas de corte e em dipositivos electrónicos. No presente trabalho, filmes finos de nitreto de boro foram depositados por DC e RF magnetron sputtering, utilizando alvos de B4C e h-BN prensados a quente, numa atmosfera de deposição contituída por misturas de Ar e N2. Os filmes finos de BN foram depositados simultâneamente em dois tipos de substratos: cerâmicos de Si3N4 com diferentes acabamentos superficiais e em discos de Si(100). A influência dos parâmetros de deposição, tais como a temperatura do substrato, composição da atmosfera de deposição na espessura dos filmes, taxa de deposição, cristalinidade, tensão residual, fases presentes e dureza, foram sistematicamente investigados usando técnicas como, SEM, XRD, FT-IR e nanodureza. O h-BN foi a principal fase observada nas análises dos espectros de FT-IR e nos difractogramas de XRD. O estado de tensão dos filmes finos de BN films é estremamente afectado pela temperatura do substrato, composição do gás de trabalho e pelo acabamento superficial dos substratos. O estudo da influência da temperatura mostraram que a taxa de deposição aumenta com o aumento da temperatura do substrato. Tensões residuais elevadas ocorrem para altas concentrações de árgon e para substratos polidos em suspensão de diamante 15 μm. Nos espectros de FT-IR, a forma das bandas de vibração variam de uma forma alargada para uma configuração estreita, correspondendo a uma menor desordem da fase hexagonal do BN, devido a variação da composição da atmosfera de deposição. Os valores de dureza obtidos estão numa faixa que vai desde os valores do h-BN macio (6 GPa) até valores próximos dos limites encontrados para filmes contendo a fase cúbica (16 GPa ), acima de 40%. ABSTRACT: Boron nitride is a polymorphic material, the hexagonal (h-BN) and the cubic (c- BN) being its main crystalline structure. The hexagonal boron nitride has a layered sp2-bonded structure, similar to graphite, while the cubic boron nitride has a hard sp3-bonded diamond-like structure. h-BN presents good dielectric properties, refractoriness, corrosion-resistant characteristics, low friction and low wear rate, and it is a well-known solid lubricant which has wide applications in metal-forming dies and other metal working processes at high temperatures or lubrication in high relative humidity environments. However, h-BN is mechanically soft. In contrast, c-BN presents excellent thermal, electrical and optical properties, with a hardness up to 70 GPa. Moreover, c-BN is superior to diamond as cutting tool for ferrous materials due to its high thermal chemical stability during machining. In the present work, thin films of boron nitride have been deposited by D.C. and R.F. magnetron sputtering from hot-pressed B4C and h-BN targets, using mixtures of Ar and N2, as working gases. The BN thin films were deposited simultaneously on two different substrates: Si3N4 ceramics with different surface finishing and Si(100) wafers. The influence of parameters such as substrate temperature and working gas composition ratio, on film thickness, deposition rate, cristallinity, residual stress, phase composition and hardness, were systematically investigated using techniques like SEM, XRD, FT-IR and nanohardness. h-BN was the main observed phase. The stress-state of the thin BN films is largely affected by the substrate temperature, working gas composition and the substrate surface finishing. The substrate temperature studies show that the deposition rate increases with an increasing of the substrate temperature. Large high residual stresses are developed for higher argon ratios and for substrate finishing with 15 μm diamond paste. In the FT-IR spectra, the shape of the vibration band changes from broad to narrow, corresponding to a less disorder h-BN phase, due to the working gas composition. The hardness values obtained are typical in the range of a soft h-BN (6 GPa) to values approaching the limit of the range reported for films containing a fraction of cubic phase (16 GPa ) up to 40%.

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33

Maranon, Walter. "Characterization of Boron Nitride Thin Films on Silicon (100) Wafer." Thesis, University of North Texas, 2007. https://digital.library.unt.edu/ark:/67531/metadc3942/.

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Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM techniques. In addition, a pin-on-disk tribological test was used to measure coefficient of friction. Results indicated that samples deposited at 400°C contained higher cubic phase of BN compared to those films deposited at room temperature. A BN film containing cubic phase deposited at 400°C for 2 hours showed 0.1 friction coefficient.

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34

Tararan, Anna. "Spectroscopy in fragile 2D materials : from Graphene Oxide to single molecules at hexagonal Boron Nitride." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS441/document.

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La spectroscopie de perte d’énergie des électrons (EELS) et la cathodoluminescence (CL) dans un microscope électronique en transmission à balayage (STEM) sont des techniques puissantes pour l’étude des nanostructures isolées. Cependant, des électrons rapides peuvent endommager fortement des échantillons minces et fragiles, ce qui limite la résolution spatiale et l’intensité des signaux spectroscopiques. Pendant cette thèse, nous avons dépassé cette restriction par le développement de protocoles d’acquisition spécifiques pour l’étude de certains archétypes de nanosystèmes fragiles. Dans la première partie de cette thèse, nous avons caractérisé des flocons minces de graphène oxydé (GO) et GO réduit (RGO) par EELS dans le STEM. Grâce aux spécificités techniques de notre microscope et à la définition des conditions d’illumination optimales, nous avons dérivé des cartes du contenu d’oxygène dans le (R)GO à une résolution spatiale inédite. Aussi, par l’analyse des pics EELS de structure fine, nous avons révisé les modèles atomiques proposés dans la littérature. Des molécules isolées constituent une autre classe de nanomatériaux fortement sensibles à l’irradiation et aussi à l’environnement chimique et physique. Nous avons conduit des expériences de CL sur des molécules individuelles, grâce à un choix avisé du substrat. Le nitrure de bore hexagonal (h-BN) est un matériaux bidimensionnel chimiquement inerte, qui participe activement au processus de CL en absorbant l’énergie incidente. Le transfert de l’excitation aux molécules et l’utilisation d’une routine innovante d’acquisition par balayage aléatoire ont permis de réduire les effets d’illumination. Ensuite, l’intérêt porté aux propriétés optiques du h-BN ont inspiré l’étude de sa phase cubique (c-BN), qui a été peu caractérisé auparavant à cause d’impuretés dans les cristaux. Nous avons analysé des cristaux de c-BN de haute pureté par EELS, en identifiant une bande interdite d’énergie plus grande que précédemment rapportée et plus proche des calculs les plus récents. Dans des cristaux moins purs, nous avons identifié et analysé plusieurs émissions associées à des défauts, en termes d’énergie caractéristique, distribution spatiale et temps de vie, par CL et interférométrie en intensité de Hanbury-Brown et Twiss
Electron energy loss spectroscopy (EELS) and cathodoluminescence(CL) in a scanning transmission electron microscope (STEM) are extremely powerful techniques for the study of individual nanostructures. Nevertheless, fast electrons damage extremely sensitive thin specimens, imposing strong limitations on the spatial resolution and the intensity of spectroscopic measurements. During this thesis we have overcome this restriction by developing material-specific acquisition protocols for the study of some archetypical fragile nanosystems. In the first part of this thesis we have characterized graphene oxide (GO) and reduced graphene oxide (RGO) thin flakes by EELS spectroscopy in the STEM. Thanks to the particular setup of our microscope and by experimentally defining the optimal illumination conditions, we have derived oxygen quantification maps of (R)GO at an unprecedented spatial resolution. On the basis also of EELS fine structures analysis, we have revised the existing proposed atomic models for these materials. Another class of exceedingly sensitive nanometric systems is represented by individual molecules, which are strongly affected by both illumination and chemical/physical environment. We have performed the first CL-STEM investigation on the luminescence of isolated molecules, thanks to a watchful choice of the substrate. Hexagonal boron nitride (h-BN) is a flat, chemically inert 2D material, that actively takes part in the CL process by absorbing the incident energy. Excitation transfer from h-BN to molecules and the use of an innovative random scan acquisition routine in the STEM have allowed to considerably lower illumination effects and improve CL intensity. Afterwards, the attractive optical properties of h-BN have led to the study of its cubic phase (c-BN), which has been up to now hindered by the poor quality of the crystals. By EELS in the STEM we have analysed c-BN crystals of the highest available purity, identifying a wider optical band-gap with respect to previous experimental studies and in better agreement with recent calculations. In commercial crystals, several defect-related emissions have been identified and analysed in terms of characteristic energy, spatial distribution and lifetime using CL and Hanbury-Brown and Twiss intensity interferometry

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Neumann, Christoph Malte [Verfasser], Christoph [Akademischer Betreuer] Stampfer, and Stephane [Akademischer Betreuer] Berciaud. "Raman Spectroscopy on Graphene Encapsulated in Hexagonal Boron Nitride / Christoph Malte Neumann ; Christoph Stampfer, Stephane Berciaud." Aachen : Universitätsbibliothek der RWTH Aachen, 2016. http://d-nb.info/1162498870/34.

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36

Eyhusen, Sören. "Phase formation processes in the synthesis of boron nitride thin films." [S.l.] : [s.n.], 2005. http://webdoc.sub.gwdg.de/diss/2005/eyhusen.

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Chan, Victory Tak Wah. "Temperature parameter at synthesis of cubic boron nitride films by chemical vapor desposition." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21173989a.pdf.

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Thesis (M.Sc.)--City University of Hong Kong, 2005.
At head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Aug. 31, 2006) Includes bibliographical references.

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38

Wickramasinghe, Thushan E. "Study of Impact Excitation Processes in Boron Nitride for Deep Ultra-Violet Electroluminescence Photonic Devices." Ohio University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1565311409028495.

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39

Uddin, Md Salah. "Modeling of Hexagonal Boron Nitride Filled Bismalemide Polymer Composites for Thermal and Electrical Properties for Electronic Packaging." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc955120/.

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Due to the multi-tasking and miniaturization of electronic devices, faster heat transfer is required from the device to avoid the thermal failure. Die-attached polymer adhesives are used to bond the chips in electronic packaging. These adhesives have to hold strong mechanical, thermal, dielectric, and moisture resistant properties. As polymers are insulators, heat conductive particles are inserted in it to enhance the thermal flow with an attention that there would be no electrical conductivity as well as no reduction in dielectric strength. This thesis focuses on the characterization of polymer nanocomposites for thermal and electrical properties with experimental and computational tools. Platelet geometry of hexagonal boron nitride offers highly anisotropic properties. Therefore, their alignment and degree of orientation offers tunable properties in polymer nanocomposites for thermal, electrical, and mechanical properties. This thesis intends to model the anisotropic behavior of thermal and dielectric properties using finite element and molecular dynamics simulations as well as experimental validation.

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40

Hoffman, Timothy B. "Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method." Diss., Kansas State University, 2016. http://hdl.handle.net/2097/32797.

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Doctor of Philosophy
Department of Chemical Engineering
James H. Edgar
Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These applications exploit the unique physical, electronic and nanophotonics applications for bulk hBN crystals. In this study, bulk hBN crystals were grown by the flux method using a molten Ni-Cr solvent at high temperatures (1500°C) and atmospheric pressures. The effects of growth parameters, source materials, and gas environment on the crystals size, morphology and purity were established and controlled, and the reliability of the process was greatly improved. Single-crystal domains exceeding 1mm in width and 200μm in thickness were produced and transferred to handle substrates for analysis. Grain size dependence with respect to dwell temperature, cooling rate and cooling temperature were analyzed and modeled using response surface morphology. Most significantly, crystal grain width was predicted to increase linearly with dwell temperature, with single-crystal domains exceeding 2mm in at 1700°C. Isotopically enriched ¹⁰B and ¹¹B hBN crystal were produced using a Ni-Cr-B flux method, and their properties investigated. ¹⁰B concentration was evaluated using SIMS and correlated to the shift in the Raman peak of the E[subscript 2g] mode. Crystals with enrichment of 99% ¹⁰B and >99% ¹¹B were achieved, with corresponding Raman shift peaks at 1392.0 cm⁻¹ and 1356.6 cm⁻¹, respectively. Peak FWHM also decreased as isotopic enrichment approached 100%, with widths as low as 3.5 cm⁻¹ achieved, compared to 8.0 cm⁻¹ for natural abundance samples. Defect selective etching was performed using a molten NaOH-KOH etchant at 425°C-525°C, to quantify the quality of the crystals. Three etch pit shapes were identified and etch pit width was investigated as a function of temperature. Etch pit density and etch pit activation energy was estimated at 5×10⁷ cm⁻² and 60 kJ/mol, respectively. Screw and mixed-type dislocations were identified using diffraction-contrast TEM imaging.

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41

Hao, Wenjun. "Atomic layer deposition of boron nitride." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSE1311/document.

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Cette thèse conclut 3 années d'études doctorales sur le "dépôt de couches atomiques (ALD) de nitrure de bore (BN)". Le but de ce travail a été d'adapter la voie des céramiques dérivées de polymères (PDC) Ã la technique ALD pour la croissance de films minces de h-BN et l'élaboration de nanostructures fonctionnelles. Tout d'abord, un nouveau procédé d'ALD sans ammoniac en deux étapes, comprenant une croissance par ALD à basse température (80 Â°C) de polyborazine (PBN) à partir de 2,4,6-trichloroborazine et d'hexaméthyldisilazane suivi un traitement thermique à haute température sous atmosphère contrôlée a été développé. Ainsi, des films minces uniformes et homogènes de BN ont pu être déposés sur divers substrats. Le caractère autolimité des réactions mises en jeu ainsi que l'homogénéité des films sur des supports très structurés ont été vérifiés. De ce fait des nanostructures fonctionnelles BN ont été réalisées à partir de substrats ou de templates de dimensionnalité variée. Leurs applications en tant que revêtements protecteurs et comme filtres et éponges absorbantes pour purifier les eaux polluées par des hydrocarbures ont en particulier été étudiées. Enfin, un deuxième procédé ALD basse température (85-150°C) utilisant le tri(isopropylamino)borane et la méthylamine comme précurseurs a été préalablement étudié afin de confirmer l'adaptabilité de la voie PDC et la technique ALD. Des films minces de BN ont été obtenus sur des substrats plans et il a été prouvé que les vapeurs de tri(isopropylamino)borane peuvent infiltrer des fibres de polyacrylonitrile électrofilées.Ce travail a été entièrement réalisé à l'Université de Lyon et a reçu le soutien financier du China Scholarship Council (CSC) pour la bourse de doctorat ainsi que de l'Agence Nationale de la Recherche (projet n° ANR-16-CE08-0021-01)
This thesis achieves 3 years of PhD studies on “Atomic layer deposition (ALD) of boron nitride (BN)”. The aim of this PhD work is to adapt the polymer derived ceramics (PDCs) route to the ALD technique for h-BN thin film growth and elaboration of functional nanostructures. A novel two-step ammonia-free ALD process, which includes ALD deposition of polyborazine at low temperature (80 °C) from 2,4,6-trichloroborazine and hexamethyldisilazane followed by post heat treatment under controlled atmosphere, has been established. Conformal and homogeneous BN thin films have been deposited onto various substrates. The self-limitation of the reactions on flat substrates and the conformality of the films on structured substrates have been verified. Functional BN nanostructures have thus been fabricated using substrates or templates with different dimensionalities. In particular, their applications as protective coatings as well as filter and absorber to purify polluted water from organic/oil hav e been investigated. Finally, a second low temperature (85-150 °C) ALD process using tri(isopropylamine)borane and methylamine as precursors has preliminary been studied in order to confirm the adaptability of PDCs route to ALD technique. BN thin films have been grown onto flat substrate and it has been proven that tri(isopropylamino)borane vapor can infiltrate into electrospun polyacrylonitrile fibers.This work was carried out at University of Lyon and financially supported by the National Research Agency (project n° ANR-16-CE08-0021-01)

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42

Lung, Kai Chun. "Cubic boron nitride/nanodiamond composite films for the application in SAW devices." access abstract and table of contents access full-text, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/dissert.pl?msc-ap-b21175020a.pdf.

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Thesis (M.Sc.)--City University of Hong Kong, 2005.
At head of title: City University of Hong Kong, Department of Physics and Materials Science, Master of Science in materials engineering & nanotechnology dissertation. Title from title screen (viewed on Sept. 4, 2006) Includes bibliographical references.

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43

Vinogradov, Nikolay. "Controlling Electronic and Geometrical Structure of Honeycomb-Lattice Materials Supported on Metal Substrates : Graphene and Hexagonal Boron Nitride." Doctoral thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-194089.

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The present thesis is focused on various methods of controlling electronic and geometrical structure of two-dimensional overlayers adsorbed on metal surfaces exemplified by graphene and hexagonal boron nitride (h-BN) grown on transition metal (TM) substrates. Combining synchrotron-radiation-based spectroscopic and various microscopic techniques with in situ sample preparation, we are able to trace the evolution of overlayer electronic and geometrical properties in overlayer/substrate systems, as well as changes of interfacial interaction in the latter.It is shown that hydrogen uptake by graphene/TM substrate strongly depends on the interfacial interaction between substrate and graphene, and on the geometrical structure of graphene. An energy gap opening in the electronic structure of graphene on TM substrates upon patterned adsorption of atomic species is demonstrated for the case of atomic oxygen adsorption on graphene/TM’s (≥0.35 eV for graphene/Ir(111)). A non-uniform character of adsorption in this case – patterned adsorption of atomic oxygen on graphene/Ir(111) due to the graphene height modulation is verified. A moderate oxidation of graphene/Ir(111) is found largely reversible. Contrary, oxidation of h-BN/Ir(111) results in replacing nitrogen atoms in the h-BN lattice with oxygen and irreversible formation of the B2O3 oxide-like structure. Pronounced hole doping (p-doping) of graphene upon intercalation with active agents – halogens or halides – is demonstrated, the level of the doping is dependent on the agent electronegativity. Hole concentration in graphene on Ir(111) intercalated with Cl and Br/AlBr3 is as high as ~2×1013 cm-2 and ~9×1012 cm-2, respectively. Unusual periodic wavy structures are reported for h-BN and graphene grown on Fe(110) surface. The h-BN monolayer on Fe(110) is periodically corrugated in a wavy fashion with an astonishing degree of long-range order, periodicity of 2.6 nm, and the corrugation amplitude of ~0.8 Å. The wavy pattern results from a strong chemical bonding between h-BN and Fe in combination with a lattice mismatch in either [11 ̅1] or [111 ̅] direction of the Fe(110) surface. Two primary orientations of h-BN on Fe(110) can be observed corresponding to the possible directions of lattice match between h-BN and Fe(110). Chemical vapor deposition (CVD) formation of graphene on iron is a formidable task because of high carbon solubility in iron and pronounced reactivity of the latter, favoring iron carbide formation. However, growth of graphene on epitaxial iron films can be realized by CVD at relatively low temperatures, and the formation of carbides can be avoided in excess of the carbon-containing precursors. The resulting graphene monolayer creates a periodically corrugated pattern on Fe(110): it is modulated in one dimension forming long waves with a period of ~4 nm parallel to the [001] direction of the substrate, with an additional height modulation along the wave crests. The novel 1D templates based on h-BN and graphene adsorbed on iron can possibly find an application in 1D nanopatterning. The possibility for growing high-quality graphene on iron substrate can be useful for the low-cost industrial-scale graphene production.

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44

Abendroth, Barbara. "Ion induced stress relaxation during the growth of cubic boron nitride thin films." Doctoral thesis, [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972228373.

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45

Abendroth, B. "Ion-induced stress relaxation during the growth of cubic boron nitride thin films." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-28863.

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46

Abendroth, B. "Ion-induced stress relaxation during the growth of cubic boron nitride thin films." Forschungszentrum Rossendorf, 2004. https://hzdr.qucosa.de/id/qucosa%3A21713.

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47

Chong, Yat Ming. "The study of cubic boron nitride/diamond composite films for sensing and mechanical applications /." access full-text access abstract and table of contents, 2009. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ap-b23749003f.pdf.

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Thesis (Ph.D.)--City University of Hong Kong, 2009.
"Submitted to Department of Physics and Materials Science in partial fulfillment of the requirements for the degree of Doctor of Philosophy." Includes bibliographical references (leaves 127-136)

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48

Joshi, Sushobhan [Verfasser], Wilhelm [Akademischer Betreuer] [Gutachter] Auwärter, and Friedrich [Gutachter] Esch. "Hexagonal Boron Nitride Monolayers as Templates for Molecular Nanostructures / Sushobhan Joshi ; Gutachter: Friedrich Esch, Wilhelm Auwärter ; Betreuer: Wilhelm Auwärter." München : Universitätsbibliothek der TU München, 2017. http://d-nb.info/114382654X/34.

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49

Pörtner, Mathias [Verfasser], Wilhelm [Akademischer Betreuer] Auwärter, Christine [Gutachter] Papadakis, and Wilhelm [Gutachter] Auwärter. "Adsorption of phthalocyanine-complexes on hexagonal boron nitride templates / Mathias Pörtner ; Gutachter: Christine Papadakis, Wilhelm Auwärter ; Betreuer: Wilhelm Auwärter." München : Universitätsbibliothek der TU München, 2020. http://d-nb.info/1205069585/34.

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50

Levert, Théo. "Growth and transfer of graphene and hexagonal boron nitride by chemical vapor deposition : applications to thermally efficient flexible electronics." Thesis, Lille 1, 2019. http://www.theses.fr/2019LIL1I007/document.

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L'électronique flexible est devenue un sujet au cœur des recherches actuelles. Dans ce but, plusieurs matériaux ont été utilisés tels que le PEN, PET ou le polyimide (PI). Ces matériaux présentent une bonne flexibilité et une compatibilité chimique avec les différents procédés utilisés en microélectronique, mais souffrent d'une faible conductivité thermique, menant à une réduction des puissances de travail des composants électroniques transférés sur de tels substrats, comparé à des substrats rigides plus classiques tels que le Silicium. Plusieurs pistes ont été investiguées pour contourner ce problème, et l'une des solutions consiste à remplir la matrice du polymère ou PI avec des nanomatériaux. Dans ce sens nous avons utilisé des structures 3D de graphène et de nitrure de bore hexagonal sous forme de mousse afin de remplir la matrice d'un PI. Nous expliquerons en détail comment nous avons obtenu un nouveau substrat flexible avec des propriétés thermiques améliorées
A major challenge is to find a way to grow those materials in order to achieve an easy and economically attractive way to produce large area of those materials with a good quality. Another challenge is to transfer those materials on substrate compatible with electronics (mainly SiO2). We will focus the first part of our work on investigation of the growth conditions required to produce large area graphene and h-BN of good quality and their transfer on SiO2. Flexible electronics has become an important field of research for many applications, such as flexible batteries. In this goal, several materials have been used such as PEN, PET or polyimide (PI). All these materials present a good flexibility and a chemical compatibility with microelectronics process but they suffer from poor thermal conductivity, leading to lower utilization of power of devices deposited compared to classic microelectronic substrate such as SiO2. Several way have been recently investigated to bypass this problem and a good solution is to fill the matrix of the polymer or polyimide with nanomaterials or nanofillers. We choose to use graphene and h-BN as the filler in a 3D shape: a foam of graphene or h-BN as the nanofiller and we chose a PI as the matrix. In the second part, we will explain in details how we achieve novel flexible substrates with enhanced thermal properties. We succeed in producing polycrystalline graphene on copper with quite a good quality, fully covering the metallic substrate with a size of 2x2cm. We tried to grow monocrystalline graphene using standard CVD and achieved hexagonal single crystals of 30µm, which is quite small compared to other methods used in literature. We synthetized polycrystalline h-BN using copper as a catalyst and ammonia borane as the precursor with a size of 6x2cm with a good homogeneity on all available substrate. We were able to transfer both graphene an h-BN on Si02 substrate using both classical wet transfer and bubbling transfer, leading to a fastest transfer and resulting on clean transfer of our materials, free of cracks, bubbles and resist residues. We succeed in producing both 3D graphene and 3D h-BN as foam using a Nickel foam as the catalyst, resulting in multilayer graphene and h-BN with a good quality. We produced new flexible and thermal efficient substrates using these foams as a filler in a matrix of PI, already commonly used as a classical flexible substrate for microelectronics. We developed two generations of substrates. We found similar mechanical properties and thermal stability as the commercial Kapton. We deposited thermistors on the surface in order to study the thermal dissipation of our samples. We improved the maximum power applied on the thermistors up to 100% before breakdown

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Dissertations / Theses on the topic 'Hexagonal Boron Nitride Films'

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