Relevant bibliographies by topics / Hexagonal Boron Nitride Films

Academic literature on the topic 'Hexagonal Boron Nitride Films'

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Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Hexagonal Boron Nitride Films"

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Kester, D. J., K. S. Ailey, R. F. Davis, and K. L. More. "Phase evolution in boron nitride thin films." Journal of Materials Research 8, no. 6 (June 1993): 1213–16. http://dx.doi.org/10.1557/jmr.1993.1213.

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Boron nitride (BN) thin films were deposited on monocrystalline Si(100) wafers using electron beam evaporation of boron with simultaneous bombardment by nitrogen and argon ions. The effect of film thickness on the resultant BN phase was investigated using Fourier transform infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM). These techniques revealed the consecutive deposition of an initial 20 Å thick layer of amorphous BN, 20–50 Å of hexagonal BN having a layered structure, and a final layer of the polycrystalline cubic phase. The growth sequence of the layers is believed to result primarily from increasing biaxial compressive stresses. Favorable surface and interface energy and crystallographic relationships may also assist in the nucleation of the cubic and the hexagonal phases, respectively. The presence of the amorphous and hexagonal regions explains why there have been no reports of the growth of 100% cubic boron nitride on Si.
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Harris, Stephen J., Anita M. Weiner, Gary L. Doll, and Wen-Jin Meng. "Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride." Journal of Materials Research 12, no. 2 (February 1997): 412–15. http://dx.doi.org/10.1557/jmr.1997.0060.

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A BN film containing comparable amounts of sp2 and sp3 phases was subjected to a gas-phase chemical etch in a hot-filament environment containing 1% CH4 in H2. After a partial etch, examination by FTIR shows that the sp2 was preferentially etched, leaving a larger sp3 fraction than in the unetched film. The possibility that preferential etching could be used to increase the purity of cBN films is discussed.
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Buyuk, Bulent, Yapincak Goncu, A. Beril Tugrul, and Nuran Ay. "Swelling on neutron induced hexagonal boron nitride and hexagonal boron nitride-titanium diboride composites." Vacuum 177 (July 2020): 109350. http://dx.doi.org/10.1016/j.vacuum.2020.109350.

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Chen, Xi, Chun Bo Tan, Kai Ran Luan, Shuai Wang, Fang Ye Li, Xiu Huan Liu, Ji Hong Zhao, Yan Jun Gao, and Zhan Guo Chen. "Epitaxially Grown Hexagonal Boron Nitride Films on Sapphire and Silicon Substrates." Key Engineering Materials 843 (May 2020): 90–96. http://dx.doi.org/10.4028/www.scientific.net/kem.843.90.

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Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.
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Kotova, L. V., L. A. Altynbaev, M. O. Zhukova, B. T. Hogan, A. Baldycheva, M. A. Kaliteevski, and V. P. Kochereshko. "Anisotropic Optical Properties of Hexagonal Boron Nitride Films." Bulletin of the Russian Academy of Sciences: Physics 86, no. 7 (July 2022): 813–16. http://dx.doi.org/10.3103/s1062873822070176.

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Checchetto, Riccardo, and Antonio Miotello. "Deuterium diffusion through hexagonal boron nitride thin films." Journal of Applied Physics 87, no. 1 (January 2000): 110–16. http://dx.doi.org/10.1063/1.371831.

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Lee, Kang Hyuck, Hyeon-Jin Shin, Brijesh Kumar, Han Sol Kim, Jinyeong Lee, Ravi Bhatia, Sang-Hyeob Kim, et al. "Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films." Angewandte Chemie 126, no. 43 (September 9, 2014): 11677–81. http://dx.doi.org/10.1002/ange.201405762.

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Lee, Kang Hyuck, Hyeon-Jin Shin, Brijesh Kumar, Han Sol Kim, Jinyeong Lee, Ravi Bhatia, Sang-Hyeob Kim, et al. "Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films." Angewandte Chemie International Edition 53, no. 43 (September 9, 2014): 11493–97. http://dx.doi.org/10.1002/anie.201405762.

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Chng, Soon Siang, Minmin Zhu, Jing Wu, Xizu Wang, Zhi Kai Ng, Keke Zhang, Chongyang Liu, Maziar Shakerzadeh, Siuhon Tsang, and Edwin Hang Tong Teo. "Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors." Journal of Materials Chemistry C 8, no. 13 (2020): 4421–31. http://dx.doi.org/10.1039/c9tc06733g.

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Zhang, L., X. T. Wang, N. X. Ci, R. Q. Peng, G. Q. Zhao, L. J. Ci, and G. H. Min. "Fabrication, Optimization, and Mechanism Analysis of Graphene/Hexagonal Boron Nitride Stacked Film." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 44, no. 9 (December 13, 2022): 1163–77. http://dx.doi.org/10.15407/mfint.44.09.1163.

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Dissertations / Theses on the topic "Hexagonal Boron Nitride Films"

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Alharbi, Abdulaziz. "Deformation of hexagonal boron nitride." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/deformation-of-hexagonal-boron-nitride(6c6013c4-8c17-4dec-b250-ed3f0baea7ed).html.

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Boron nitride (BN) materials have unique properties, which has led to interest in them in the last few years. The deformation of boron nitride materials including hexagonal boron nitride, boron nitride nanosheets (BNNSs) and boron nitride nanotubes have been studied by Raman spectroscopy. Both mechanical and liquid exfoliations were employed to obtain boron nitride nanostructures. Boron nitride glass composites were synthesised and prepared in thin films to be deformed by bending test in-situ Raman spectroscopy. Hexagonal boron nitride in the form of an individual flake and as flakes dispersed in glass matrices has been deformed and Raman measurement shows its response to strain. The shift rates were, -4.2 cm-1/%, -6.5 cm-1/% for exfoliated h-BN flake with thick and thin regions and -7.0 cm-1/%, -2.8 cm-1/% for the h-BN flakes in the h-BN/ glass (I) and glass (II) composites. Boron nitride nanosheets (BNNSs) shows a G band Raman peak at 1367.5 cm-1, and the deformation process of BNNSs/ glass composites gives a shift rate of -7.65 cm-1/% for G band. Boron nitride nanotubes (BNNTs) have a Raman peak with position at 1368 cm-1, and their deformation individually and in composites gives Raman band shift rates of -25.7 cm-1/% and -23.6 cm-1/%. Glass matrices shows compressive stresses on boron nitride fillers and this was found as an upshift in the frequencies of G band peak of boron nitride materials. Grüneisen parameters of boron nitride (BN) were used to calculate the residual strains in glass matrices of BNNSs nanocomposites as well as to estimate the band shift rates which found to be in agreement with the experimental shift rate of bulk BN and BNNTs.
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Camurlu, Hasan Erdem. "Carbothermic Production Of Hexagonal Boron Nitride." Phd thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/3/12607808/index.pdf.

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Formation of hexagonal boron nitride (h-BN) by carbothermic reduction of B2O3 under nitrogen atmosphere at 1500oC was investigated. Reaction products were subjected to powder X-ray diffraction analysis, chemical analysis and were examined by SEM. B4C was found to exist in the reaction products of the experiments in which h-BN formation was not complete. One of the aims of this study was to investigate the role of B4C in the carbothermic production of h-BN. For this purpose, conversion reaction of B4C into h-BN was studied. B4C used in these experiments was produced in the same conditions that h-BN was formed, but under argon atmosphere. It was found that formation of h-BN from B4C&ndash
B2O3 mixtures was slower than activated C&ndash
B2O3 mixtures. It was concluded that B4C is not a necessary intermediate product in the carbothermic production of h-BN. Some additives are known to catalytically affect the h-BN formation. The second aim of this study was to examine the catalytic effect of some alkaline earth metal oxides and carbonates, some transition metal oxides and cupric nitrate. It was found that addition of 10wt% CaCO3 into the B2O3+C mixture was optimum for increasing the rate and yield of h-BN formation and decreasing the B4C amount in the products and that the reaction was complete in 2 hours. CaCO3 was observed to be effective in increasing the rate and grain size of the formed h-BN. Addition of cupric nitrate together with CaCO3 provided a further increase in the size of the h-BN grains.
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Khan, Aamar Farooq. "The electrochemistry of 2D hexagonal boron nitride." Thesis, Manchester Metropolitan University, 2018. http://e-space.mmu.ac.uk/620319/.

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Since the discovery of the unique physical properties of graphene, research has intensified in the field of two-dimensional (2D) nanomaterial electrochemistry. Indeed, newly emerging 2D materials such as 2D-hexagonal boron nitride (2D-hBN) have the potential to transform the field of electrochemistry when implemented as a next generation electrode material. This thesis reports on the electrochemical applicability of utilising 2D-hBN, previously considered non-electroactive, as a novel electrode material. Also considered is the effect of the fabrication process of 2D-hBN when employed towards a range of electrochemical applications. Chapter 1 gives an overview of the general electrochemical concepts that concern this thesis. Chapter 2 offers an insight into recent 2D materials electrochemistry literature regarding, first, graphene and then 2D-hBN. From this, successive chapters follow the development and investigation of 2D-hBN, formed via differing synthesis techniques, thus enabling a truer reflection of 2D-hBN as an electrode material to be achieved. Chapter 3 details the relevant experimental information and the full physicochemical characterisation of the different 2D-hBN materials employed within this thesis. Chapters 4 and 5 utilise surfactant-free (pristine) 2D-hBN, where pristine 2D-hBN is ‘electrically wired’ upon a suitable electrode surface. Chapter 4 reveals for the first time that pristine 2D-hBN gives rise to beneficial electrochemical behaviour towards the oxygen reduction reaction (ORR) when immobilised upon a graphitic substrate. Chapter 5 explores pristine 2D-hBN towards a biological approach in the sensing of dopamine (DA) and its common interferents ascorbic acid (AA) and uric acid (UA). Pristine 2D-hBN exhibits a beneficial electrocatalytic effect towards the detection of dopamine when immobilised upon a graphitic substrate. This observed beneficial effect upon the utilisation of pristine 2D-hBN has not previously been reported in the literature when supported upon any electrode. Both chapters implement ‘mass coverage’ studies of 2D-hBN, an often overlooked parameter within the literature Chapters 6 and 7 utilise surfactant-exfoliated 2D-hBN and compare the effect of the fabrication process of 2D-hBN (pristine vs. surfactant-exfoliated) upon the observed electrochemistry towards the ORR, capacitance applications and the sensing of dopamine, via a dropcasting electrode modification approach. Chapter 6 explores surfactant-exfoliated 2D-hBN towards the ORR and capacitance applications for the first time. The surfactant-exfoliated 2D-hBN nanosheets are immobilised upon graphitic screen-printed electrodes (SPEs) with ‘mass coverage’ studies performed and the observed electrochemical response is compared to the surfactant-free pristine 2D-hBN approach. Chapter 7 explores surfactant-exfoliated 2D-hBN as a potential electrochemical sensing platform towards the electroanalytical sensing of dopamine (DA) in the presence of the common interferents, ascorbic acid (AA) and uric acid (UA) for the first time. Surfactant exfoliated 2D-hBN is electrically wired via a drop-casting modification process onto SPEs and the observed electrochemical response is compared to the surfactant-free (pristine) 2D-hBN approach. The performance of these surfactant-exfoliated 2D-hBN modified SPEs are critically evaluated upon the implementation of ‘mass coverage studies. Chapter 8 explores for the first time a low cost and reproducible approach for producing 2D Hexagonal Boron Nitride (2D-hBN) electrochemical screen-printed platforms (hBN-SPEs). These novel hBN-SPEs are explored as a potential electrocatalyst towards the ORR. This fabrication approach is compared to the drop casting technique of pristine and surfactant-exfoliated 2D-hBN utilised towards the ORR, thus offering an alternative approach. This thesis demonstrates for the first time that 2D-hBN is electroactive when immobilised upon a graphitic substrate towards a range of applications. It is also shown that fabrication process in the production of 2D-hBN can affect the observed electrochemistry, thus control experiments must be undertaken to truly understand the impact of this material.
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Ayoob, Raed. "Dielectric properties of hexagonal boron nitride polymer nanocomposites." Thesis, University of Southampton, 2017. https://eprints.soton.ac.uk/417272/.

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There is a growing research interest in polymer nanocomposite materials due to their potential in enhancing dielectric properties. However, a considerable amount of variability exists in the literature regarding the electrical performance of polymer nanocomposites, and therefore the underlying mechanisms underpinning their electrical properties are still far from fully understood. Possible reasons for the existing inconsistencies could be due to different material preparation techniques, different nanoparticle dispersion states, unknown filler content, inconsistent sample storage conditions, and unknown water level content in the samples. Determining the principal factors that dominate the electrical behaviour of polymer nanocomposites could allow engineers to tailor the electrical properties of dielectrics for their specific application. As a result, the work reported in this thesis was mainly set out to explore the factors governing the electrical properties of polymer nanocomposites such that the inconsistencies in the literature can be better understood, and consequently eliminated. This thesis investigated the performance of hexagonal boron nitride (hBN) nanocomposites based on two thermoplastic polymers: polystyrene and polyethylene. Prior to producing any nanocomposites, the hBN particles were characterised using different techniques. The characterisation primarily revealed that the boron nitride particles are in the hexagonal form and the surface of hBN contains a scarce amount of hydroxyl groups. Polystyrene nanocomposites were prepared containing identical amounts of hBN dispersed in different solvents in an attempt to obtain different dispersion states, as a result of different hBN/solvent interactions. The effect of solvent processing was negligible on the dispersion state of the hBN in the polystyrene; no observable difference in the dispersion and electrical properties was reported although the presence of hBN resulted in a slight increase in the breakdown strength relative to the unfilled polystyrene. A range of polyethylene nanocomposites were produced containing different amounts of hBN to understand the effect of the dispersion or aggregation state of the hBN on the breakdown strength. The results revealed that the nanocomposites, regardless of the morphology, exhibited a monotonic increase in breakdown strength with increasing hBN content from 2 wt % to 30 wt %, while maintaining the low dielectric losses of the unfilled polyethylene. While the hBN was found to have a strong nucleating effect on the polyethylene, it was determined that the local change in morphology was not the cause of the enhanced breakdown strength as both the polyethylene nanocomposites obtained by rapid crystallisation, where the development of spherulites was suppressed, and the amorphous polystyrene nanocomposites, also exhibited an improved breakdown strength. Further experiments indicated that the polyethylene nanocomposites did not absorb any moisture from the environment in ambient conditions, and absorbed a very small amount of water even in the 30 wt % polyethylene/hBN nanocomposite when completely immersed in water. Dielectric spectroscopy measurements revealed that the surface hydroxyl groups on the hBN are most likely located only on the edge surfaces of the hBN rather than basal surfaces. The water was most likely loosely bound to the hBN particles, where local water clusters formed. It was remarkable that a percolating water network was not formed in a nanocomposite consisting of an already percolating hBN network, which was largely attributed to the surface chemistry of hBN. Despite the presence of water in the system, the hBN nanocomposites continued to exhibit an enhanced breakdown strength in comparison to the unfilled polyethylene. Therefore, this thesis demonstrated that the electrical behaviour of polymer nanocomposites is most likely dominated by the surface state of the nanoparticles and how the particles interact with the charge carriers; any other effects due to local morphological changes or nanoparticle dispersion are considered to be secondary reasons for changes in the electrical properties.
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Pelini, Thomas. "Optical properties of point defects in hexagonal boron nitride." Thesis, Montpellier, 2019. http://www.theses.fr/2019MONTS139.

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L’objectif de cette thèse était d’explorer et de caractériser optiquement les défauts ponctuels dans le nitrure de bore hexagonal. L’étude des défauts dans ce semiconducteur revêt un intérêt fondamental à la fois pour la science des matériaux dans laquelle il joue un rôle clé de part sa nature lamellaire (matériau 2D) et sa stabilité thermique et chimique très élevées, et également dans le domaine des technologies quantiques où son grand gap (~ 6 eV) permet d’exploiter les défauts ponctuels profonds comme «atome artificiel» dans la matrice cristalline. Au cours de cette thèse, des défauts appartenant à deux gammes spectrales ont été étudiés: une première classe émettant dans le visible, et une seconde émettant dans la gamme ultraviolette.Ainsi, dans un premier temps, nous avons exploité un microscope confocal à balayage fonctionnant à l’ambiante et dans les longueurs d’onde visibles. La réalisation de cartes spatiales de photoluminescence a permis de mettre en évidence l’existence de points chauds de photoluminescence localisés, sous la limite de diffraction du microscope, et émettant autour de 600 nm (2 eV). Des mesures de corrélations temporelles de photons montre d’une part qu’il s’agit d’émetteurs quantiques uniques, et permet d’autre part de sonder la photo-dynamique de ces systèmes, en particulier aux très longues échelles de temps. Différents régimes de photo-stabilité sont observés et discutés. Enfin, l’étude en puissance a aussi été effectuée et montre qu’une part des émetteurs (~ 5%) sont photo-stables à haute puissance d’excitation optique et saturent à un taux d’émission de plusieurs millions de coups par seconde: ces défauts ponctuels constituent une source de photons uniques parmi les plus brillantes à température ambiante dans un système à l’état solide.Dans un second temps, nous avons exploré les défauts émettant dans la gamme ultraviolette. Un préalable à la maitrise et l’utilisation des défauts dans les semiconducteurs à des fins technologiques est la connaissance de leur origine chimique. Dans cette optique nous avons tout d’abord étudié les niveaux énergétiques superficiels et profonds d’échantillons de nitrure de bore hexagonal enrichis en carbone en combinant des mesures de macro-photoluminescence et de réflectivité. L’existence de nouvelles transitions optiquement actives est révélée (autour de 300 nm), et l’implication du carbone comme origine de ces transitions est discutée. L’étude approfondie de ces nouvelles émissions a requiert la réalisation d’un microscope confocal à balayage fonctionnant dans l’ultraviolet à 266 nm et à température cryogénique. Le design du microscope est détaillé, les difficultés de sa mise en oeuvre expliquées, et ses performances démontrées. Ce nouvel outil expérimental nous permet d’examiner avec précision les défauts profonds. En particulier, une étude est faite sur la corrélation spatiale de ces nouvelles raies avec celle du défaut ponctuel bien connu à 4.1 eV. Ensuite, nous avons utilisé des nouveaux échantillons dopés en carbone isotopiquement purifié comme stratégie pour déterminer la nature chimique du défaut à 4.1 eV. À travers cette tentative, nous avons mis en lumière l’inhomogénéité spatiale des caractéristiques optiques de cet émetteur. Enfin, dans la dernière partie, on tente d’isoler l’émission provenant d’un défaut unique à 4.1 eV. Pour cela, on utilise des flocons fins pré-caractérisés en microscopie électronique et contenant une faible densité d’émetteurs. Leur photostabilité est étudiée
The purpose of this thesis was to explore and caracterize optically the point defects in hexagonal boron nitride. The study of defects in this semiconductor is of fundamental importance firstly for the material science in which it plays a key role thanks to its lamellar structure (2D material) and its high thermal and chemical stability, and secondly for the quantum nanotechnology domain where its large bandgap (~ 6 eV) allows for exploiting deep levels point imperfections as «artificial atom» in the crystal lattice. During this thesis, defects in two spectral ranges have been studied: a first family emitting in the visible wavelengths, and a second one emitting in the ultraviolet range.Firstly, we made use of a scanning confocal microscope working in ambient conditions and at visible wavelengths. The recording of photoluminescence spatial maps permited to show the existence of localised hot spot of light, under the diffraction limit of the miscroscope, and emitting around 600 nm (2 eV). Time photon-correlation measurements revealed on one hand that we were dealing with single quantum emitters, and on the other hand allowed for probing the photodynamics of those systems, in particular at very long time-scale. Various photostability regimes are observed and discussed. Last but not least, power resolved study was also performed and demonstrated that a number of the emitters (~ 5%) are photo-stable at high excitation power and saturate at few millions counts per second: those point defects are one of the brightest single-photon source at room temperature in solid-state systems.Secondly, we explored the defects in the ultraviolet spectral range. A prerequisite to the engineering of defects in semiconductors for technological applications is the knowledge of their chemical origin. With this in mind, we studied shallow and deep levels in carbon-doped hBN samples by combining macro-photoluminescence and reflectance measurements. We showed the existence of new optically-active transitions (around 300 nm) and discussed the implication of carbon in these levels. The in-depth study of these levels have required the development of a new scanning micro-photoluminescence confocal microscope operating at 266 nm under cryogenic environment. The design and performances of the optical system are described, and the experimental challenges explained in details. Using this new setup, we went further into the examination of the deep levels. In particular, a study was carried out regarding the spatial correlation between these new spectral lines and the well-known point defect at 4.1 eV. Then, we used new crystals with isotopically-purified carbon doping as a strategy to investigate the long-standing question concerning the chemical origin of the 4.1 eV defect. Through this attempt, we brought to light the spatial dependence of the optical features for this specific emitter. Last but not least, we present our work dedicated to isolate the emission of a single 4.1 eV defect. We studied the photoluminescence of thin undoped flakes, pre-characterized with an electron microscope, that contain a low density of emitters, and inspected in particular their photostability in these thin crystals
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Krishna, Kumar Roshan. "High temperature quantum transport in graphene/hexagonal-boron nitride heterostructures." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/88867/.

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The past decade has seen a new paradigm in solid state physics, where a new class of layered crystals can be thinned down to a monolayer and exhibit drastic changes in their electronic and optical properties in comparison to their bulk counterpart. Graphene was the first, and certainly most outstanding, of this set of so called two-dimensional (2D) materials. Aside from its obvious appeal which earnt its discovery the 2010 Nobel Prize, the electronic properties of graphene are truly unique. Perhaps the most familiar is its linear electron dispersion which hosts quasi-particles that obey the Dirac equation. This has enabled the study of a plethora of transport phenomena, as well as the realisation of novel device architectures that will be used in the next generation electronics. In general, experimental signatures of electron transport are most prominent at liquid helium temperatures when lattice vibrations are weak, for example in quantum hall physics. In this Thesis, we explore the regime of intermediate temperatures where the physics of interest is strongest between 100 and 300 K. Equipped with the state of the art high quality graphene samples, we demonstrate novel electron transport unique to graphene. The experimental work consists of two themes. In the first work, we study hydrodynamic electron flow in graphene encapsulated with hexagonal boron nitride devices. At elevated temperatures, electron-electron collisions become significant, and the electron viscosity starts to influence the steady state current distribution in a variety of surprising ways. In the first work, we perform transport experiments on standard graphene hall bars in a unique measurement geometry which allows the detection of negative non-local voltages intrinsic to viscous flow. In another experiment, we study viscous electron flow through graphene nano-constrictions/classical point contacts. Here, we observed anomalous temperature dependence in the conductance measured across the constriction. Specifically, the conductance increases with increasing temperature and even exceeded the semi-classical limit which is expected for single-particle ballistic transport. The underlying mechanism originates from electron-electron collisions, which, counter-intuitively, act to enhance current flow. In the second work, we slightly change our experimental system by studying magneto transport in a graphene/hexagonal boron nitride superlattice. Owed to the large periodicity of the superlattice unit cell, these devices have allowed experimental observation of the long sought Hofstadter butterfly, which addresses the electronic dispersion of electrons in a periodic potential and magnetic field. Here, we again go to elevated temperatures, where all the spectral gaps related to Hofstadter butterflies are completely smeared, and instead find a new type of quantum oscillation. These new oscillations are periodic in 1/B with a frequency corresponding to one flux quantum piercing the superlattice unit cell. Whilst these oscillations are related to Hofstadter physics, they are in fact more primal in origin. The most fascinating feature is their robustness with respect to increasing temperature. The oscillations are easily observable at room temperature in fields as low as 3 T and still remained prominent at 373 K, the boiling point of water.
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Elias, Christine. "Optical spectroscopy of hexagonal boron nitride : from bulk to monolayer." Thesis, Montpellier, 2020. http://www.theses.fr/2020MONTS054.

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Le nitrure de bore hexagonal (h-BN) ou « graphite blanc » est un semiconducteur qui possède une large bande interdite (~ 6 eV) et dont la structure cristalline est proche de celle du graphite : elle est formée par des plans d’atomes arrangés en nid d’abeilles. La liaison entre les plans est de type Van-der-Waals. En 2004, h-BN a démontré sa capacité d’émettre de manière efficace de la lumière dans l’UV profond (~200 nm) et cela sur des cristaux massifs synthétisés au Japon (NIMS). Ces résultats ont attiré l’attention de la communauté scientifique des semiconducteurs pour la possibilité de pouvoir utiliser ce matériau comme une source de lumière pour des applications dans l’UV profond.La nature de la bande interdite dans h-BN massif a été un sujet de débat pendant plus de 12 ans et elle a été étudiée à la fois par des calculs théoriques et par des expériences. En 2016, le gap a été démontré de nature indirecte par des expériences de spectroscopie optique à 2-photons. Un exciton indirect et des recombinaisons assistées par phonons ont été observés par photoluminescence dans h-BN.Dans h-BN, comme dans d’autres matériaux 2D, en passant d’un système 3D (massif) à un système 2D (monocouche), la nature du gap change. Les calculs montrent un changement d’un gap indirect (massif) vers un gap direct (monocouche). Cette transition de gap indirect-direct n’a jamais été observée dans h-BN, et en conséquence les propriétés opto-électroniques de la monocouche n’ont jamais été étudiées. Durant cette thèse, nous avons étudié pour la première fois les propriétés optiques de la monocouche de BN (mBN) par spectroscopie optique (macro-PL et réflectivité) sur des échantillons de mBN épitaxiés par MBE à haute température sur des substrats de graphite (HOPG). Nos résultats ont démontré pour la première fois la possibilité de fabriquer une monocouche de BN (3.5 Å) par MBE. Nos mesures de spectroscopie optique ont démontré la présence d’une transition optique à 6.1 eV associée à un gap direct dans la mBN
Hexagonal boron nitride (h-BN) or “white graphite” is a semiconductor which has a wide bandgap (~ 6 eV) and whose crystalline structure is close to that of graphite: it is formed by planes of atoms arranged in a hexagonal form. The interaction between the planes is of Van-der-Waals type. In 2004, h-BN demonstrated its ability to efficiently emit light in the deep UV (~ 200 nm) in crystals synthesized in NIMS laboratory in JAPAN. These results have attracted the attention of the community of semiconductors to the possibility of being used as a source of light for deep UV applications.The nature of the band gap in bulk h-BN has been the subject of a debate for over 12 years and it has been studied by theoretical calculations and by experiments. In 2016, the gap was demonstrated to be indirect based on 2-photon spectroscopy measurements. Indirect exciton and phonon-assisted recombination were observed by photoluminescence in h-BN.In h-BN, like in other 2D materials, when changing from a 3D system (massive) to a 2D system (monolayer), the nature of the gap changes. The calculations show a change from an indirect gap (bulk) to a direct gap (monolayer). This indirect-direct gap transition has never been observed in h-BN, and consequently the opto-electronic properties of the monolayer have never been studied. During this thesis, we studied for the first time the optical properties of the BN monolayer (mBN) by performing optical spectroscopy (macro-PL and reflectivity) in mBN samples grown by MBE at high temperature on graphite substrates (HOPG).Our results demonstrated for the first time the possibility to grow mBN (3.5 Å) by MBE technique. Our optical measurements demonstrated the presence of an optical transition at 6.1 eV associated to the direct gap in the mBN
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8

Akyildiz, Ugur. "Effect Of Sodium Carbonate On Carbothermic Formation Of Hexagonal Boron Nitride." Master's thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612579/index.pdf.

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Effect of Na2CO3 on formation of hexagonal boron nitride (h-BN) by carbothermic method has been studied by subjecting B2O3-C and Na2CO3-added B2O3-C mixtures to N2 (g) atmosphere. Na2CO3 amount in the mixtures was changed in the range of 0-40 wt. %. Time and temperature were used as experimental variables. Reaction products were analyzed by XRD and scanning electron microscope. Na2CO3 was found to increase both the amount and the particle size of h-BN similar to CaCO3 [1]. Na2CO3 was found to be less effective than CaCO3 in increasing the amount while it was more effective than CaCO3 in increasing the particle size of h-BN forming.
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Woods, Colin. "Investigations into the interfacial interaction of graphene with hexagonal boron nitride." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/investigations-into-the-interfacial-interaction-of-graphene-with-hexagonal-boron-nitride(de99f43b-790f-4a32-b696-060ed700a5bd).html.

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This thesis, submitted to the University of Manchester, covers a range of topics related to current research in two-dimensional materials under the title: 'Investigations into the interfacial interaction of graphene with hexagonal boron nitride.'In the last decade, two-dimensional materials have become a rich source of original research and potential applications. The main advantage lies in the ability to produce novel composite structures, so-called 'layered heterostructures', which are only a few atomic layers thick. One can utilise the unique properties of several species of crystal separately, or how they interact to realise a diverse range of uses. Two such crystals are graphene and hexagonal boron nitride. Hexagonal boron nitride has, so far, been used primarily as a substrate for graphene, allowing researchers to get the most out of graphene's impressive individual properties. However, in this thesis, the non-trivial van der Waals interaction between graphene and hexagonal boron nitride is examined. The interface potential reveals itself as a relatively large-scale, orientation-dependant superlattice, which is described in chapters 1 and 2.I In Chapter 4, the effect of this superlattice is examined by measurement of its effect upon the electrons in graphene, where its modulation leads to the creation of second and third generation Dirac points, revealing Hofstadter's Butterfly. As well as an excellent example of the physics possible with graphene, it also presents a new tool with which to create novel devices possessing tailored electronic properties. II In chapter 5, the consequential effect of the superlattice potential on the structure of graphene is studied. Results are discussed within the framework of the Frenkel-Kontorova model for a chain of atoms on a static background potential. Results are consistent with relaxation of the graphene structure leading to the formation of a commensurate ground state. This has exciting consequences for the production of heterostructures by demonstrating that alignment angle can have large effects upon the physical properties of the crystals. III In chapter 6, the van der Waals potential is shown to be responsible for the self-alignment of the two crystals. This effect is important for the fabrication of perfectly aligned devices and may lead to new applications based on nanoscale motion.
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10

Crane, Thomas Philip. "An NMR study of helium-3 adsorbed on hexagonal boron nitride." Thesis, Royal Holloway, University of London, 1998. http://digirep.rhul.ac.uk/items/1d14fa0b-8f29-7b7a-f32b-7c23bae45c35/1/.

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A Pulse-NMR study of helium-3 adsorbed on hexagonal boron-nitride (BN) powder has been performed. Structurally very similar to graphite, the exposed basalplanes present a very smooth, ideal adsorbing surface and lack its undesirable strong anisotropic diamagnetism. The relaxation times T1 and T2 of helium-3 have been measured as a function of coverage, temperature and frequency. A variety of two dimensional phases have been observed including: a fluid, commensurate solid, incommensurate solid plus a separate crystallite edge film. 2D melting in the incommensurate solid and an order-disorder transition in the commensurate solid have been observed. Evidence for a low temperature, low coverage fluid+commensurate solid coexistence which transforms to a single phase at higher temperatures plus a possible domain-wall phase at higher coverages has been identified. Coupled magnetic relaxation between the helium-3 film and substrate boron-11 spins has been noted. Boron-11 relaxation times have been measured against coverage and temperature. Heteronuclear relaxation is particularly important in the commensurate phases where it can dominate homonuclear spin-lattice relaxation, providing a powerful new probe of the low coverage phases. Based on the detailed theory of coupled magnetic dipolar relaxation a model has been developed which quantitatively describes all the important features of the data many of which are unique to the BN/3He system. Presented separately in chapter 8, it concludes the magnetic properties of registered helium 3 spins are dominated by 14N�� 3He cross relaxation processes, mediated by the €14N quadrupole splitting at FQ(14N) and driven by exchange motion in the film. Using a computer for unattended, real-time experimental control has allowed substantial quantities of high quality relaxation data to be taken. Off-line, automated, numerical analysis of raw spin-echo and processed data has been extensively used. Modelling relaxation data with a stretched-exponential function, h(t) = h(0) exp(ta/T1,2) has provided a exceptionally sensitive indicator of physical changes in the film.
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Books on the topic "Hexagonal Boron Nitride Films"

1

Tay, Roland Yingjie. Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4.

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Luches, Armando. Laser-assisted deposition of boron nitride thin films and nanotubes. Hauppauge, N.Y: Nova Science Publisher's, 2010.

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Miyoshi, Kazuhisa. Fundamental tribological properties of ion-beam-deposited boron nitride films. Cleveland, Ohio: Lewis Research Center, 1989.

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Miyoshi, Kazuhisa. Fundamental tribological properties of ion-beam-deposited boron nitride films. Cleveland, Ohio: Lewis Research Center, 1989.

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Pouch, John J. Auger electron spetroscopy, secondary ion mass spectrometry and optical characterization of a-C:H and BN films. [Cleveland, Ohio: National Aeronautics and Space Administration, Lewis Research Center, 1986.

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National Aeronautics and Space Administration (NASA) Staff. Exfoliation of Hexagonal Boron Nitride Via Ferric Chloride Intercalation. Independently Published, 2019.

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Tay, Roland Yingjie. Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Springer Singapore Pte. Limited, 2018.

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Tay, Roland Yingjie. Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Springer, 2018.

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Kazuhisa, Miyoshi, and United States. National Aeronautics and Space Administration., eds. Adhesion, friction, and deformatiom of ion-beam-deposited boron nitride films. [Washington, D.C.]: NASA, 1987.

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Kazuhisa, Miyoshi, and United States. National Aeronautics and Space Administration., eds. Adhesion, friction, and deformatiom of ion-beam-deposited boron nitride films. [Washington, D.C.]: NASA, 1987.

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Book chapters on the topic "Hexagonal Boron Nitride Films"

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Tay, Roland Yingjie. "Controllable Growth of Hexagonal Boron Nitride Films on Cu Foils." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 29–41. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_3.

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Tay, Roland Yingjie. "Growth of Nanocrystalline Boron Nitride Films on Dielectric Substrates." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 43–51. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_4.

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Tay, Roland Yingjie. "A New Single-Source Precursor for Monolayer h-BN and h-BCN Thin Films." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 99–115. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_7.

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Adachi, Sadao. "Hexagonal Boron Nitride (h-BN)." In Optical Constants of Crystalline and Amorphous Semiconductors, 127–36. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_12.

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Freudenstein, Regine, and Wilhelm Kulisch. "Nanocrystalline Cubic Boron Nitride Films." In Functional Properties of Nanostructured Materials, 289–94. Dordrecht: Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4594-8_20.

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Tay, Roland Yingjie. "Synthesis of Two-Dimensional Hexagonal Boron Nitride." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 1–10. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_1.

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Ay, N., and I. Tore. "Pressureless Sintering of Hexagonal Boron Nitride Powders." In Materials Science Forum, 207–12. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-439-1.207.

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Majidi, Sima, Siamak Pakdel, Jafar Azamat, and Hamid Erfan-Niya. "Hexagonal Boron Nitride (h-BN) in Solutes Separation." In Two-Dimensional (2D) Nanomaterials in Separation Science, 163–91. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-72457-3_7.

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Tay, Roland Yingjie. "Growth of Oriented Single Crystalline Hexagonal Boron Nitride Monolayers." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 69–98. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_6.

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Khelifa, Ronja, Nikolaus Flöry, Shadi Nashashibi, Konstantin Malchow, Markus Parzefall, Achint Jain, Takashi Taniguchi, Kenji Watanabe, and Lukas Novotny. "Waveguide-Coupled Disk Resonators Fabricated from Hexagonal Boron Nitride." In NATO Science for Peace and Security Series B: Physics and Biophysics, 325–27. Dordrecht: Springer Netherlands, 2021. http://dx.doi.org/10.1007/978-94-024-2138-5_37.

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Conference papers on the topic "Hexagonal Boron Nitride Films"

1

Umehara, N., I. Kuwahara, T. Kouno, H. Kominami, Y. Nakanishi, and K. Hara. "Chemical Vapor Deposition of Hexagonal Boron Nitride Films on c-plane Sapphire Substrates." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.h-2-2.

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Scheuer, K. G., P. S. Kirwin, and R. G. DeCorby. "Coupling Emission from Strained Hexagonal Boron Nitride Thin Films to Monolithic Buckled Microcavities." In Quantum Information and Measurement. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/qim.2021.th4b.3.

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Min Kim, Soo. "Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819017.

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Umehara, N., A. Masuda, T. Shimizu, T. Kouno, H. Kominami, and K. Hara. "Free Exciton Emission from Hexagonal Boron Nitride Films Grown on Sapphire Substrates by Low Pressure Chemical Vapor Deposition." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-8-6.

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Lee, Jongho, Kristen N. Parrish, Sk Fahad Chowdhury, Tae-Jun Ha, Yufeng Hao, Li Tao, Ananth Dodabalapur, Rodney S. Ruoff, and Deji Akinwande. "State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics." In 2012 IEEE International Electron Devices Meeting (IEDM). IEEE, 2012. http://dx.doi.org/10.1109/iedm.2012.6479044.

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Lee, Seung Hee, Seokho Moon, Hokyeong Jeong, Dong Yeong Kim, and Jong Kyu Kim. "Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing." In UV and Higher Energy Photonics: From Materials to Applications 2020, edited by Gilles Lérondel, Yong-Hoon Cho, and Atsushi Taguchi. SPIE, 2020. http://dx.doi.org/10.1117/12.2570856.

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Duong, Hanh. "Hexagonal Boron Nitride Nanophotonics." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819362.

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Shandilya, Prasoon K., Johannes E. Fröch, Matthew Mitchell, David P. Lake, Sejeong Kim, Milos Toth, Bishnupada Behera, Chris Healey, Igor Aharonovich, and Paul E. Barclay. "Hexagonal boron nitride cavity optomechanics." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/cleo_si.2019.sf1j.3.

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Barjon, Julien, Alexandre Plaud, Lorenzo Sponza, Leonard Schue, Ingrid Stenger, Frederic Fossard, Kenji Watanabe, Takashi Taniguchi, Francois Ducastelle, and Annick Loiseau. "Luminescence efficiency of hexagonal boron nitride." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819024.

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Mendelson, Noah, Igor Aharonovich, and Milos Toth. "Quantum emitters in hexagonal boron nitride." In Quantum Nanophotonic Materials, Devices, and Systems 2020, edited by Mario Agio, Cesare Soci, and Matthew T. Sheldon. SPIE, 2020. http://dx.doi.org/10.1117/12.2567599.

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Reports on the topic "Hexagonal Boron Nitride Films"

1

Ismach, Ariel, Harry Chao, Rodney S. Ruoff, and Sanjay Banerjee. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films. Fort Belvoir, VA: Defense Technical Information Center, January 2014. http://dx.doi.org/10.21236/ada616097.

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Marquez Rossy, Andres E., Beth L. Armstrong, Amy M. Elliott, and Edgar Lara-Curzio. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects. Office of Scientific and Technical Information (OSTI), May 2017. http://dx.doi.org/10.2172/1357988.

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Muramatsu, Y., M. Grush, and T. A. Callcott. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603470.

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Smith, W. L., T. A. Michalske, and R. R. Rye. The deposition of boron nitride and carbon films on silica glass fibers. Office of Scientific and Technical Information (OSTI), November 1993. http://dx.doi.org/10.2172/10110580.

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