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Academic literature on the topic 'Heterostructures Heterostructures'

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Published: 10 December 2022
Last updated: 29 January 2023

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Journal articles on the topic "Heterostructures Heterostructures"

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Maevskaya, Maria V., Aida V. Rudakova, Alexandra V. Koroleva, Aleksandr S. Sakhatskii, Alexei V. Emeline, and Detlef W. Bahnemann. "Effect of the Type of Heterostructures on Photostimulated Alteration of the Surface Hydrophilicity: TiO2/BiVO4 vs. ZnO/BiVO4 Planar Heterostructured Coatings." Catalysts 11, no. 12 (November 23, 2021): 1424. http://dx.doi.org/10.3390/catal11121424.

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Here, we report the results of comparative studies of the photostimulated hydrophilic behavior of heterostructured TiO2/BiVO4 and ZnO/BiVO4, and monocomponent TiO2 and ZnO nanocoating surfaces. The chemical composition and morphology of the synthesized nanocoatings were characterized by XPS, SEM, and AFM methods. The electronic energy structure of the heterostructure components (band gap, top of the valence band, bottom of the conduction band, and Fermi level position) was determined on the basis of experimental results obtained by XPS, UV-V absorption spectroscopy and Kelvin probe methods. According to their electronic energy structure, the ZnO/BiVO4 and TiO2/BiVO4 heterostructures correspond to type I and type II heterostructures, respectively. The difference in the type of heterostructures causes the difference in the charge transfer behavior at heterojunctions: the type II TiO2/BiVO4 heterostructure favors and the type I ZnO/BiVO4 heterostructure prevents the photogenerated hole transfer from BiVO4 to the outer layer of the corresponding metal oxide. The results of the comparative studies show that the interaction of the photogenerated holes with surface hydroxy-hydrated multilayers is responsible for the superhydrophilic surface conversion accompanying the increase of the surface free energy and work function. The formation of the type II heterostructure leads to the spectral sensitization of the photostimulated surface superhydrophilic conversion.
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Huma, Tabasum, Nadimullah Hakimi, Muhammad Younis, Tanzeel Huma, Zhenhua Ge, and Jing Feng. "MgO Heterostructures: From Synthesis to Applications." Nanomaterials 12, no. 15 (August 3, 2022): 2668. http://dx.doi.org/10.3390/nano12152668.

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The energy storage capacity of batteries and supercapacitors has seen rising demand and problems as large-scale energy storage systems and electric gadgets have become more widely adopted. With the development of nano-scale materials, the electrodes of these devices have changed dramatically. Heterostructure materials have gained increased interest as next-generation materials due to their unique interfaces, resilient structures and synergistic effects, providing the capacity to improve energy/power outputs and battery longevity. This review focuses on the role of MgO in heterostructured magnetic and energy storage devices and their applications and synthetic strategies. The role of metal oxides in manufacturing heterostructures has received much attention, especially MgO. Heterostructures have stronger interactions between tightly packed interfaces and perform better than single structures. Due to their typical physical and chemical properties, MgO heterostructures have made a breakthrough in energy storage. In perpendicularly magnetized heterostructures, the MgO’s thickness significantly affects the magnetic properties, which is good news for the next generation of high-speed magnetic storage devices.
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Давыдова, З. "МОДЕЛИРОВАНИЕ И РАСЧЕТ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИ ГЕТЕРОСТРУКТУРЫ С КВАНТОВОЙ ЯМОЙ НА ПРИМЕРЕ ALGaAS/GaAS." EurasianUnionScientists 6, no. 12(81) (January 18, 2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1163.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]
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Давыдова, З. "MODELING AND CALCULATION OF THE PHOTOLUMINESCENCE SPECTRUM OF A HETEROSTRUCTURE WITH A QUANTUM WELL BY THE EXAMPLE OF ALGaAS / GaAS." EurasianUnionScientists 6, no. 12(81) (January 18, 2021): 30–35. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.81.1172.

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This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]
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Zheng, L., T. T. Li, R. Jin, M. Lei, Y. J. Xu, X. S. Yang, K. Zhao, B. Sun, Y. Zhang, and Y. Zhao. "The interface superconductivity of Bi2Se3/Fe–Se heterostructure." International Journal of Modern Physics B 32, no. 32 (December 30, 2018): 1850355. http://dx.doi.org/10.1142/s0217979218503551.

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Bi2Se3/Fe–Se heterostructures on Si(100) substrates have been prepared by radio frequency magnetron sputtering technique. The thickness of FeSe2 film is an important factor for the properties of Bi2Se3/Fe–Se heterostructures. Our Bi2Se3/Fe–Se heterostructural samples showed ferromagnetism, which increase with increasing thickness of FeSe2 layer. However, when the FeSe2 layer is as thin as 20 nm, superconductivity could be observed through magnetization measurements, due to the existence of superconducting Fe–Se. Thus the Bi2Se3/Fe–Se heterostructure provides an approach to achieve both ferromagnetism and superconductivity simultaneously in interface, as well as to realize the interplay between a superconductor and a topological insulator.
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Smirnov, A. M., A. Yu Ivanov, A. V. Kremleva, Sh Sh Sharofidinov, and A. E. Romanov. "Stress Relaxation Due to Dislocation Formation in Orthorhombic Ga2O3 Films Grown on Al2O3 Substrates." Reviews on Advanced Materials and Technologies 4, no. 3 (2022): 1–6. http://dx.doi.org/10.17586/2687-0568-2022-4-3-1-6.

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We analyze the preference of various types of misfit dislocation (MD) formation in film/substrate κ-Ga2O3/α-Al2O3 and κ (AlxGa1–x)2O3/κ-Al2O3 heterostructures. We consider two possibilities for variation in films growth orientation (defined by inclination angle ϑ) for these heterostructures with inclination axes about either [100] or [010] crystallographic directions. We study dependences of the critical film thickness for MD formation on the inclination angle ϑ for heterostructures under consideration. We find the presence of two special orientations (ϑ ~ 26° for [100] heterostructure, ϑ ~ 28° for [010] heterostructure, and ϑ = 90° for both inclination types) of κ-Ga2O3/α-Al2O3 heterostructures, for which the formation of MDs is energetically unfavorable. We show that formation of pure edge MDs is easier for [010] κ-(AlxGa1–x)2O3/κ-Al2O3 heterostructures than for [100] heterostructures, and it is vice versa for mixed MDs in these heterostructures.
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Chen, Ying Jie, Xue Li, Bao Nan Jia, Chao Dong, Xiao Ning Guan, Xin Zhao, and Li Hong Han. "Optoelectronic properties and interfacial interactions of two-dimensional Cs2PbX4–MSe2 (M = Mo, W) heterostructures." RSC Advances 12, no. 16 (2022): 9883–90. http://dx.doi.org/10.1039/d2ra00595f.

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The PCE of Cs2PbX4–WSe2 heterostructures is larger than the PCE of Cs2PbX4–MoSe2 heterostructures. Cs2PbI4–WSe2 heterostructure has the largest PCE (18%) among Cs2PbX4–MSe2 heterostructures and has great potential application in solar cells.
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Zhang, Jianzhi, Hongfu Huang, Junhao Peng, Chuyu Li, Huafeng Dong, Sifan Kong, Yiyuan Xie, Runqian Wu, Minru Wen, and Fugen Wu. "A Cost-Effective Long-Wave Infrared Detector Material Based on Graphene@PtSe2/HfSe2 Bidirectional Heterostructure: A First-Principles Study." Crystals 12, no. 9 (September 2, 2022): 1244. http://dx.doi.org/10.3390/cryst12091244.

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The Graphene@PtSe2 heterostructure is an excellent long-wave infrared detection material. However, the expensive cost of PtSe2 prevents its widespread use in infrared detection. In this paper, Hf was used to partially replace Pt to form Graphene@(PtSe2)n(HfSe2)4−n (n = 1, 2, and 3) bidirectional heterostructures consisting of graphene and lateral PtSe2/HfSe2 composites based on first-principles calculations. Then, the new bidirectional heterostructures were compared with heterostructures formed by graphene with pure MSe2 (M = Pt, Hf). It was found that the band gaps of the bidirectional heterostructures were between those of Graphene@PtSe2 and Graphene@HfSe2. Among these heterostructures, the Graphene@(PtSe2)3(HfSe2)1 bidirectional heterostructure has almost the same optical absorption properties in the infrared wavelength region of 1.33~40 µm as the Graphene@PtSe2 heterostructure, and it improves the absorption in the near-infrared wavelength region of 0.75~1.33 µm. Such a designment may bring the material costs down (since PtSe2 costs approximately five times more than HfSe2). This study on the designment of the bidirectional Graphene@(PtSe2)3(HfSe2)1 heterostructure also illustrates a cost-effective design method for Pt-based IR detectors.
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Dadsetani, M., and A. R. Omidi. "Optical filtering properties of TiO2/Al2O3 heterostructures from first principles." International Journal of Modern Physics B 29, no. 06 (March 2, 2015): 1550047. http://dx.doi.org/10.1142/s0217979215500472.

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This study combines the use of the full potential linear-augmented plane wave method (FP-LAPW) within the framework of the density functional theory (DFT) and the optical matrix approach for modeling the multilayer assembly. A new class of heterostructures with sufficient number of alternating layers of rutile- TiO 2 (as a high index material) and α- Al 2 O 3 (as a low index material) are proposed and their transmittance spectra are investigated. This study shows that the number of alternating layers, and the thickness and arrangement of them should be considered in making a heterostructured filter. The relation between heterostructure parameters and narrow-band-pass peaks of transmittance spectra is investigated. The proposed model seems to be successful in predicting the optical behavior of heterostructures and simulations agree well with the experimental observations. In addition, our model is very flexible and the effect of other parameters such as incident angle and light polarization can be easily investigated.
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Murashkina, Anna A., Tair V. Bakiev, Yurii M. Artemev, Aida V. Rudakova, Alexei V. Emeline, and Detlef W. Bahnemann. "Photoelectrochemical Behavior of the Ternary Heterostructured Systems CdS/WO3/TiO2." Catalysts 9, no. 12 (November 27, 2019): 999. http://dx.doi.org/10.3390/catal9120999.

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In this article, we report the results of comparative studies of photoelectrochemical behavior of the binary CdS/TiO2 and WO3/TiO2 and ternary CdS/WO3/TiO2 heterostructures based on titania nanotube and planar structures. Physical–chemical characterization by XRD, XPS, and electron microscopy methods together with electrochemical impedance spectroscopy measurements confirm a successful formation of heterostructured electrodes, both nanotube-based and planar. The results of photoelectrochemical studies of the heterostructures demonstrate a significant difference in their behavior depending on the structure geometry and the character of the formed heterojunctions. It is concluded that nanotube-based heterostructure electrodes can be characterized by a stochastic set of different heterojunctions while planar systems demonstrate well-ordered heterojunctions with a strictly defined electron transfer direction. Particularly, we demonstrate the possibility of the realization of Z-scheme of photoexcitation and charge separation in ternary planar systems under visible light irradiation.
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Dissertations / Theses on the topic "Heterostructures Heterostructures"

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Mand, R. S. "Characterisation and applications of heterostructures : Characterisation of GaAs/GaAlAs heterostructures and GaAs/GaAlAs double heterostructure electronic and photonic switches." Thesis, University of Bradford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.371479.

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Leung, Chi Wah. "Metallic magnetic heterostructures." Thesis, University of Cambridge, 2002. https://www.repository.cam.ac.uk/handle/1810/34608.

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This work studied sputter deposited conventional spin valves (SV) and related structures. In SV layered structures, two ferromagnetic layers are separated by a non-magnetic spacer. Under an external magnetic field, the relative orientation of the magnetization changes in the ferromagnets, exhibiting the giant magnetoresistive effect. The controlled switching of ferromagnets in convention SV is facilitated by the exchange bias (EB) effect, which is achieved by depositing an antiferromagnetic layer next to one of the ferromagnetic layers in a magnetic field. Two highly related investigations were performed in this work. In the first part the exchange bias effect in the Ni80Fe20/Fe50Mn50/Co trilayer structure was studied. Samples were deposited in a low field condition that permitted EB to be established in NiFe/FeMn but not in FeMn/Co bilayer structures. Temperature-dependent magnetic measurements were performed on the trilayer sample, as well as the corresponding NiFe/FeMn and FeMn/Co bilayer samples. Recent literature on similar system showed that an AF spiral could be formed in the trilayer, which was probed by relative EB directions of the NiFe and Co layers. In this work, no exchange bias was found to propagate from the NiFe/FeMn system into the FeMn/Co system, showing that the AF spiral was induced by the specific magnetic treatment and was not the cause of EB effect. Besides, exchange bias field and coercivity of the samples indicated the influence of the EB system in the presence of an adjacent EB system. Explanations of the effect were made with some existing EB models. In the second part of the work, conventional SV of target structure Nb/NiFe/Cu/Co/FeMn/Nb was studied in a 'built-up samples' strategy. A batch of these built-up samples, which corresponded to the different stages of the deposition of the target top conventional SV structure, were prepared by terminating the sputtering process after a certain number of layers were deposited. These samples were thoroughly characterized by structural, magnetic and electrical measurements. In terms of structural characterization by x-ray techniques, more reliable information concerning the morphology and microstructure of the layers was obtained by probing the built-up samples, instead of relying solely on the information of the full SV structure. For the electric and magnetic measurements, a number of unexpected observations were made in the built-up samples, although the final performance of the full SV structure was of comparable quality to the literature. These results showed the ability of the 'built-up samples' strategy in critical characterization and optimization of magnetic multilayered structures.
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Zhao, F. "Graphene-diamond heterostructures." Thesis, University College London (University of London), 2015. http://discovery.ucl.ac.uk/1462910/.

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Graphene obtained by mechanical exfoliation of graphite displays unique electronic properties with high mobility and saturation velocity. However, this is not a scalable technique, the film being limited to small area. Large area synthesis of good quality graphene has been achieved by CVD. The choice of substrate apparently influences the electronic properties of graphene. Most of reports have used SiO2-Si due to the widespread availability, but it is a poor choice of the material to degrade the graphene performace. In this thesis, more ideal platforms are introduced, including single crystal diamond (SCD), nanodiamond (ND), and diamond-like-carbon (DLC). It was found that different terminations for substrates caused strong effects for graphene properties. For H-terminated diamond, it was found that a p-type layer with good mobility and a small bang gap, whilst when N/F-terminations are introduced it was found that a layer with more metallic-like characters arises. Furthermore, different orientations of H-terminated SCD(100)/(111) were found to induce different band-gap of graphene. Simulation analysis proves the difference. However, the mobility results of graphene-H-terminated ND herostructure are better than graphene supported by SCD, which offers the prospect of low cost sp2 on sp3 technology. Raman and XPS results reveal the influence from the C-H band of ND surface. Impedance measurements show two conductive paths in the graphene-HND heterostructure. Graphene FET was built on this heterostructure, which exhibited n-type and high mobility. The family of amorphous carbon films, DLC, appeal to a preferable choice of graphene supporting substrate since IBM built the high-frequency graphene FET on DLC. For N-termination it was found that the optical band gap of DLC shrinked, whilst for F-terminated DLC it was found that fluorine groups reduce the DLC’s surface energy. Owing to different phonon energies and surface trap densities, graphene-DLC heterostructures give different electronic properties and offer the prospect for 2D lateral control applications.
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Slobodskyy, Taras. "Semimagnetic heterostructures for spintronics." Doctoral thesis, [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=983425892.

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Fromhold, Timothy Mark. "Magnetotunnelling in semiconductor heterostructures." Thesis, University of Nottingham, 1990. http://eprints.nottingham.ac.uk/14162/.

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Experimental studies of magnetotunnelling in heterostructures have revealed series of resonances due to electrons tunnelling from a 2DEG in a lightly-doped emitter into magnetoquantised states in the collector contact of a single-barrier structure (Hickmott, 1987 and Snell et al. 1987) or in the quantum well of a double-barrier structure (Eaves et a1., 1988 and Leadbeater et a1., 1989). These experiments are very suitable for theoretical analysis since a transverse magnetic field (parallel to the barrier interfaces) has little effect on the electronic states of the 2DEG, provided the diamagnetic energy is much less than the binding energy of the bound state of the accumulation layer potential. The tunnelling electrons then have a small range of transverse momenta between +PF and -PF, where PF = l'lkF is the Fermi momentum in the 2DEG. This range determines the positions of the orbit centres of the magnetoquantised states into which the electrons are injected after emergence from the tunnel barrier. For the single-barrier heterostructures described in this thesis, these are interfacial Landau states corresponding to classical orbits in which the electron skips along the barrier interface. For double-barrier structures there are interfacial states at high magnetic fields and traversing states at low magnetic fields. Owing to the high electric field in the quantum well, the corresponding classical orbits are cycloidal trajectories which intersect both barrier interfaces (traversing states) or just one barrier interface (skipping states). The variation of the tunnel current I with magnetic field B and voltage V is calculated using the Bardeen transfer-Hamiltonian approach within a WKB approximation. The accumulation layer potential is modelled according to a simple variational solution. This enables a physical interpretation of the experimental results to be given in terms of the effect of the magnetic field on the effect ive barri er hei ght and the ampli tudes of the magnetoquantised wave functions at the barrier interfaces. Both of these effects are required to account for the observed dependence of current on magnetic field I(B) and the amplitudes of the oscillatory structure revealed in the derivative plots of dI/dB and d2I/dB2 accounts for: The model (a) the observation of two series of resonances corresponding to +PF and -PF electrons in experiments on (InGa)As/InP single-barrier structures. (b) the absence of the +PF series of resonances in GaAs/(A1Ga)As single-barrier structures. (c) the changeover from traversing to skipping states in GaAs/(A1Ga)As double-barrier structures and the characteristic decrease in oscillatory amplitudes in the changeover region.
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Ko, D. Y. K. "Quantum tunnelling in heterostructures." Thesis, University of Exeter, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384673.

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Chung, Sung-Yong. "Si/SiGe heterostructures materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors /." Columbus, Ohio : Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1132244278.

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Colson, Harry George. "Strain relaxation in semiconductor heterostructures." Thesis, University of Surrey, 1997. http://epubs.surrey.ac.uk/843607/.

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The strain relaxation behaviour of and oriented InxGa1-xAs layers grown on GaAs substrates has been investigated using surface profilometry and high resolution X-ray diffraction. The strain relaxation behaviour of single InxGa1-xAs layers (grown by various methods) has been studied using double crystal X-ray diffraction. The layer strain has been shown to be predictable, following the empirical relaxation law given by epsilonr = k/d where epsilonr is the residual strain, d is the layer thickness and k is a constant (= 0.84 nm +/- 0.18 nm). In addition, it is shown, using previously published data, that this law is applicable to other semiconductor alloy systems. Results show that the relaxation behaviour of oriented material is very similar to that of oriented material. However, the critical thickness is 1.23 times that for material in agreement with theory. It is shown that plastic relaxation of good quality epitaxially strained layers is accompanied by roughening of the surface in the form of striations and that the maximum striation height is always less than 20 nm regardless of layer thickness. Measurements of strain relaxation in multi-quantum well type samples show good agreement with a simple geometric theory in which the minimum barrier thickness needed to decouple strained layers of thickness hw is given as 0.62hw.
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Warburton, Paul Anthony. "Quasiparticle trapping in superconducting heterostructures." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318419.

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Leadbeater, Mark Levence. "Resonant tunnelling in semiconductor heterostructures." Thesis, University of Nottingham, 1990. http://eprints.nottingham.ac.uk/28733/.

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This thesis examines the electrical transport properties of a series of n-type GaAs/(AIGa)As double barrier resonant tunnelling devices with well widths between 50 angstrem and 2400 angstrem . The current-voltage characteristics show peak-to-valley ratios as high as 25:1 and as many as seventy resonances, with clear evidence of quantum interference effects at room temperature. The application of a high magnetic field parallel to the current flow produces magnetooscillations in the transport properties which allow the sheet charge density in the accumulation layer to be determined. The energy level in the well over a wide range of bias is obtained from analysis of thermal activation of resonant tunnelling. The contributions of elastic scattering and LO phonon emission to the valley current are investigated spectroscopically with a magnetic field and two phonon modes of the (AIGa)As barrier are observed. The buildup of space charge in the quantum well at resonance leads to intrinsic bistability in the current and differential capacitance of an asymmetric structure. Magnetoquantum oscillations due to a degenerate electron gas in the well are used to measure this charge buildup and demonstrate that the tunnelling process is truly sequential. The bistability is dramatically enhanced at high magnetic fields when the lowest energy Landau level of the well can accommodate a high electron density. In a strongly asymmetric sample, a new kind of bistability is observed where the off-resonant current exceeds the resonant current due to enhancement of charge buildup by intersubband scattering. The modulation of the scattering rate by a magnetic field produces periodic oscillations in the width of the bistability. In a magnetic field applied perpendicular to the current, the resonances are broadened as a consequence of the conservation of canonical momentum. The transition from electric to magnetic quantisation in wide wells is investigated and tunnelling into interfacial Landau levels is observed. The angular dependence of the resonances is used to probe conduction band anisotropy. In a tilted field, a completely new type of magneto-oscillations is observed.
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Books on the topic "Heterostructures Heterostructures"

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Zabel, Hartmut, and Samuel D. Bader, eds. Magnetic Heterostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73462-8.

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Ivchenko, Eougenious L., and Grigory Pikus. Superlattices and Other Heterostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-97589-9.

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Ivchenko, Eougenious L., and Grigory E. Pikus. Superlattices and Other Heterostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60650-2.

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Chang, Leroy L. Molecular Beam Epitaxy and Heterostructures. Dordrecht: Springer Netherlands, 1985.

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Omar, Manasreh Mahmoud, ed. Antimonide-related strained-layer heterostructures. Amsterdam: Gordon and Breach Science Publishers, 1997.

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A, Kochelap V., and Stroscio Michael A. 1949-, eds. Quantum heterostructures: Microelectronics and optoelectronics. Cambridge: Cambridge University Press, 1999.

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Chang, Leroy L., and Klaus Ploog, eds. Molecular Beam Epitaxy and Heterostructures. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5073-3.

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L, Chang Leroy, Ploog Klaus, and North Atlantic Treaty Organization. Scientific Affairs Division., eds. Molecular beam epitaxy and heterostructures. Dordrecht: M. Nijhoff, 1985.

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Physics of semiconductors and their heterostructures. New York: McGraw-Hill, 1993.

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Maiti, C. K. Strained silicon heterostructures: Materials and devices. London: Institution of Electrical Engineers, 2001.

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Book chapters on the topic "Heterostructures Heterostructures"

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Grundmann, Marius. "Heterostructures." In Graduate Texts in Physics, 347–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13884-3_11.

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Grundmann, Marius. "Heterostructures." In Graduate Texts in Physics, 351–82. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-51569-0_12.

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Grundmann, Marius. "Heterostructures." In Graduate Texts in Physics, 399–435. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-23880-7_12.

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Price, Peter J. "Physics of Heterostructures and Heterostructure Devices." In The Physics of Submicron Semiconductor Devices, 445–75. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-2382-0_13.

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Kolobov, Alexander V., and Junji Tominaga. "TMDC Heterostructures." In Two-Dimensional Transition-Metal Dichalcogenides, 447–71. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-31450-1_13.

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Ikram, Muhammad, Ali Raza, and Salamat Ali. "2D-Heterostructures." In Nanostructure Science and Technology, 111–46. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-96021-6_5.

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Evangelisti, F. "Amorphous Semiconductor Heterostructures." In Tetrahedrally-Bonded Amorphous Semiconductors, 457–67. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5361-2_39.

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Vasko, Fedor T., and Alex V. Kuznetsov. "Tunneling in Heterostructures." In Electronic States and Optical Transitions in Semiconductor Heterostructures, 69–96. New York, NY: Springer New York, 1999. http://dx.doi.org/10.1007/978-1-4612-0535-7_4.

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Daudin, Bruno. "InGaN Nanowire Heterostructures." In Wide Band Gap Semiconductor Nanowires 2, 41–60. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984291.ch2.

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Lew Yan Voon, Lok C., and Morten Willatzen. "Heterostructures: Basic Formalism." In The k p Method, 273–362. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-92872-0_12.

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Conference papers on the topic "Heterostructures Heterostructures"

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Eshghinejad, Ahmadreza, Wen-I. Liang, Qian Nataly Chen, Feiyue Ma, Ying-Hao Chu, and Jiangyu Li. "Probing Multiferroic Heterostructures of BiFeO3-LiMn2O4 Using Magnetic, Piezoelectric and Piezomagnetic Force Microscopies." In ASME 2014 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/smasis2014-7513.

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In this study magnetic force microscopy (MFM), piezoresponse force microscopy (PFM), and the newly developed piezomagnetic force microscopy (PmFM) techniques are used to probe the ferroelectric and ferromagnetic properties of BiFeO3-LiMn2O4 (BFO-LMO) heterostructures at nano-scale. The PmFM technique is also used to probe the ferromagnetic properties of CoFe2O4 (CFO) as a case study. The PFM and PmFM mappings of the BFO-LMO heterostructures clearly distinguish the BFO matrix and LMO nanopillars while the MFM mapping is ambiguous. The relatively high piezomagnetic response of BFO matrix is believed to be due to the Mn doping while the piezoelectric-like response of LMO nanopillars is due to the ionic activities and the vertical geometry of its heterostructure. Lastly, limitations of the PmFM technique are discussed.
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Elliman, Robert G. "SEMICONDUCTOR HETEROSTRUCTURES." In Proceedings of the Tenth Physics Summer School. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789814350747_0006.

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Saito, Tetsuki, Yu Kobayashi, Kenji Watanabe, Takashi Taniguchi, Yutaka Maniwa, and Yasumitsu Miyata. "Interlayer excitons in CVD-grown WS2/MoS2 vertical heterostructures." In JSAP-OSA Joint Symposia. Washington, D.C.: Optica Publishing Group, 2017. http://dx.doi.org/10.1364/jsap.2017.7a_a404_6.

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Heterostructures of transition metal dichalcogenides (TMDCs) have attracted attention because of their emergent optical and electronic properties. As a representative example, the presence of interlayer excitons has been reported for TMDC-based vertical heterostructures [1,2]. However, in previous studies, an observed photoluminescence (PL) peak relating to the interlayer excitons has relatively-large linewidth probably due to the presence of inhomogeneous broadening. To solve this issues, we have developed the CVD process of TMDCs with highly-uniform optical spectra and their heterostructures [3,4]. Here, we report on the observation of sharp PL peaks in high-quality WS2/MoS2 vertical heterostructures.
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Elabsy, A. M., and H. G. Abdelwahed. "Transmission Coefficients for Tunneling of Electrons and Holes in Biased Ga1−xAlxAs–GaAs–Ga1−xAlxAs Triple Barriers Semiconductor Heterostructures." In ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/mn2008-47046.

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In this work we calculate the transmission coefficients for tunneling of electrons and holes through biased triple barriers (double-wells) semiconductor heterostructures (TBSH’s), composed of Ga1−xAlxAs–GaAs–Ga1−xAlxAs with x = 0.45. The calculations are based on the effective mass theory that employs the spatial effective masses and the temperature dependent of the material parameters that constitute the heterostructure. The transverse motions of carriers are also considered. In the analysis the Airy’s function formalism is taken into account. It is found that, the resonant transmission energies for both electrons and holes are decreased by enhancing the applied voltage. Also, the total resonant transmission energies for the tunneling carriers are deviated toward higher energies, as the temperature is increased. Therefore, these devices should be operated at low temperatures. Furthermore, the present work shows a discrepancy in resonant transmission energies with those reported ones, due to ignoring the effect of temperature.
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Cherkasov, Yuri A. "Photothermoplastic molecular heterostructures." In Optical Memory and Neural Networks, edited by Andrei L. Mikaelian. SPIE, 1991. http://dx.doi.org/10.1117/12.50415.

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Tatsumi, Toru, Ken-ichi Aketagawa, Masayuki Hiroi, and Junro Sakai. "SiGe/Si Heterostructures." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-ii-16.

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Alo, Arthur, Leonardo W. T. Barros, Lucas B. Vieira, Gabriel Nagamine, Wan K. Bae, and Lazaro A. Padilha. "Controlling Multiphoton Absorption with Nanocrystal Heterostructures." In Latin America Optics and Photonics Conference. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/laop.2022.tu1a.2.

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Multiphoton absorption of nanocrystals is shown to be dependent on the band alignment of heterostructures, allowing for control over the multiphoton interactions in these materials with minimal change to their photoluminescence spectra.
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Dubrovskii, V. G. "III-V nanowire heterostructures." In 2018 International Conference Laser Optics (ICLO). IEEE, 2018. http://dx.doi.org/10.1109/lo.2018.8435711.

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Paranjape, V. V., and P. V. Panat. "Polaronic Excitations In Heterostructures." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940848.

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Goldman, Allen M., Phil A. Kraus, K. Nikolaev, V. Vas'ko, Anand Bhattacharya, and W. Cooley. "Magnetic-superconducting oxide heterostructures." In AeroSense 2000, edited by Davor Pavuna and Ivan Bozovic. SPIE, 2000. http://dx.doi.org/10.1117/12.397835.

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Reports on the topic "Heterostructures Heterostructures"

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Schlom, Darrell G. EUO-Based Multifunctional Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, June 2015. http://dx.doi.org/10.21236/ada625922.

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Domnita Catalina Marinescu. Spin Transport in Semiconductor heterostructures. Office of Scientific and Technical Information (OSTI), February 2011. http://dx.doi.org/10.2172/1005440.

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Hauenstein, R. J. Development of Si/SiGe Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, October 1988. http://dx.doi.org/10.21236/ada201440.

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Hauenstein, R. J., and O. J. Marsh. Development of Si/SiGe Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, January 1988. http://dx.doi.org/10.21236/ada189527.

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Silvestri, Hughes Howland. Diffusion in silicon isotope heterostructures. Office of Scientific and Technical Information (OSTI), January 2004. http://dx.doi.org/10.2172/834271.

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Hauenstein, R. J., J. L. Veteran, and M. H. Young. Development of Si/SiGe Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada232747.

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Lu, Tzu-Ming, and Lisa A. Tracy. Artificial Graphene in Undoped Semiconductor Heterostructures. Office of Scientific and Technical Information (OSTI), September 2016. http://dx.doi.org/10.2172/1562617.

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Jacobs, Dennis C. Charged Particle Ejection from Nanolayered Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, June 2007. http://dx.doi.org/10.21236/ada469735.

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Tsymbal, Evgeny. Modeling of Electroresistive and Magnetoelectric Oxide Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, September 2008. http://dx.doi.org/10.21236/ada493966.

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Viehland, Dwight, and Shashank Priya. Mesoscale Design of Magnetoelectric Heterostructures and Nanocomposites. Office of Scientific and Technical Information (OSTI), December 2019. http://dx.doi.org/10.2172/1581173.

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