Journal articles: 'Heterostructures for spintronics'

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Sierra, Juan F., Jaroslav Fabian, Roland K. Kawakami, Stephan Roche, and Sergio O. Valenzuela. "Van der Waals heterostructures for spintronics and opto-spintronics." Nature Nanotechnology 16, no. 8 (July 19, 2021): 856–68. http://dx.doi.org/10.1038/s41565-021-00936-x.

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Dietl, Tomasz, Hideo Ohno, and Fumihiro Matsukura. "Ferromagnetic Semiconductor Heterostructures for Spintronics." IEEE Transactions on Electron Devices 54, no. 5 (May 2007): 945–54. http://dx.doi.org/10.1109/ted.2007.894622.

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Samarth, N., S. H. Chun, K. C. Ku, S. J. Potashnik, and P. Schiffer. "Hybrid ferromagnetic/semiconductor heterostructures for spintronics." Solid State Communications 127, no. 2 (July 2003): 173–79. http://dx.doi.org/10.1016/s0038-1098(03)00340-5.

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Gu, Youdi, Qian Wang, Weijin Hu, Wei Liu, Zhidong Zhang, Feng Pan, and Cheng Song. "An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena." Journal of Physics D: Applied Physics 55, no. 23 (February 11, 2022): 233001. http://dx.doi.org/10.1088/1361-6463/ac4fd3.

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Abstract SrRuO3 (SRO)-based heterostructures have attracted much attention for potential applications such as electrodes, oxide spintronics, topological electronics and electrocatalytic function mainly due to the strong spin–orbit coupling, itinerant ferromagnetism with 4d electrons, high metallic conductivity, perpendicular magnetic anisotropy and rich oxygen octahedral distortion of SRO. Here, this work aims to offer a timely and systematic review on SRO-based heterostructures for its emerging opportunities in oxide spintronic and topological electronic applications. We first present a brief summary of the current status in SRO-based heterostructures and describe the motivations of this review. We then briefly review the surface and interface modulation in SRO-based heterostructures, including oxygen octahedral distortions (antiferrodistortive mode and ferroelectric mode) engineering and ion defect engineering. In the third part, we discuss the spin-charge interconversion phenomena in SRO-based heterostructures, covering the inverse spin Hall effect and current-induced spin-orbit torques. Particularly, in the fourth part, we discuss the emergent topological Hall effect and underlying mechanism in SRO-based heterostructures, including the two-channel anomalous Hall effect and Berry phase manipulation. The fifth part presents the magnetic Weyl fermions and its electric-field control of SRO films. We finally conclude with a discussion of challenges and prospects of SRO-based heterostructures, which provides a guidance for exploring novel physical properties and designing multifunctional devices based on SRO.

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Gaj, Jan A., Joël Cibert, Andrzej Golnik, Mateusz Goryca, Elżbieta Janik, Tomasz Kazimierczuk, Łukasz Kłopotowski, et al. "Semiconductor heterostructures for spintronics and quantum information." Comptes Rendus Physique 8, no. 2 (March 2007): 243–52. http://dx.doi.org/10.1016/j.crhy.2006.02.009.

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Trassin, Morgan. "Low energy consumption spintronics using multiferroic heterostructures." Journal of Physics: Condensed Matter 28, no. 3 (December 24, 2015): 033001. http://dx.doi.org/10.1088/0953-8984/28/3/033001.

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Ranjbar, Sina, Satoshi Sumi, Kenji Tanabe, and Hiroyuki Awano. "Large Perpendicular Exchange Energy in TbxCo100−x/Cu(t)/[Co/Pt]2 Heterostructures." Magnetochemistry 7, no. 11 (October 25, 2021): 141. http://dx.doi.org/10.3390/magnetochemistry7110141.

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In order to realize a perpendicular exchange bias for applications, a robust and tunable exchange bias is required for spintronic applications. Here, we show the perpendicular exchange energy (PEE) in the TbxCo100−x/Cu/[Co/Pt]2 heterostructures. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers. The dependence of the PEE on the interlayer thickness of Cu and the composition of Tb–Co were analyzed. We demonstrate that the PEE can be controlled by changing the Cu interlayer thickness of 0.2 < tCu < 0.3 (nm). We found that PEE reaches a maximum value (σPw = 1 erg/cm2) at around x = 24%. We, therefore, realize the mechanism of PEE in the TbxCo100−x/Cu/[Co/Pt]2 heterostructures. We observe two competing mechanisms—one leading to an increase and the other to a decrease—which corresponds to the effect of Tb content on saturation magnetization and the coercivity of heterostructures. Sequentially, our findings show possibilities for both pinned layers in spintronics and memory device applications by producing large PEE and controlled PEE by Cu thickness, based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures.

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Wang, Jiawei, Aitian Chen, Peisen Li, and Sen Zhang. "Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure." Materials 14, no. 16 (August 17, 2021): 4623. http://dx.doi.org/10.3390/ma14164623.

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Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

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Yang, X., Z. Zhou, T. Nan, Y. Gao, G. M. Yang, M. Liu, and N. X. Sun. "Recent advances in multiferroic oxide heterostructures and devices." Journal of Materials Chemistry C 4, no. 2 (2016): 234–43. http://dx.doi.org/10.1039/c5tc03008k.

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The increasing demand for realizing ultra-fast, compact, and ultra-low power electronics/spintronics has propelled the creation of novel multiferroic heterostructures which enable voltage control of magnetism in an energy efficient way.

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Chen, Xia, and Wenbo Mi. "Mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics." Journal of Materials Chemistry C 9, no. 30 (2021): 9400–9430. http://dx.doi.org/10.1039/d1tc01989a.

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The mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics have been reviewed, where the conclusion and outlook are also presented.

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Kirmani, Ahmad R. "Dirac material heterostructures lead to next-generation spintronics." MRS Bulletin 44, no. 2 (February 2019): 86–87. http://dx.doi.org/10.1557/mrs.2019.27.

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Dmitriev, A. I., A. D. Talantsev, S. V. Zaitsev, O. V. Koplak, and R. B. Morgunov. "Nano- and heterostructures of magnetic semiconductors for spintronics." Russian Chemical Bulletin 60, no. 6 (June 2011): 1051–57. http://dx.doi.org/10.1007/s11172-011-0166-z.

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13

Morinson-Negrete, Juan David, César Ortega-López, and Miguel J. Espitia-Rico. "Effects of Mono-Vacancies of Oxygen and Manganese on the Properties of the MnO2/Graphene Heterostructure." Materials 15, no. 8 (April 8, 2022): 2731. http://dx.doi.org/10.3390/ma15082731.

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The effects of the monovacancies of oxygen (VO) and manganese (VMn) on the structural and electronic properties of the 1T–MnO2/graphene heterostructure are investigated, within the framework of density functional theory (DFT). We found that the values of the formation energy for the heterostructure without and with vacancies of VO and VMn were −20.99 meVÅ2 , −32.11meVÅ2, and −20.81 meVÅ2, respectively. The negative values of the formation energy indicate that the three heterostructures are energetically stable and that they could be grown in the experiment (exothermic processes). Additionally, it was found that the presence of monovacancies of VO and VMn in the heterostructure induce: (a) a slight decrease in the interlayer separation distance in the 1T–MnO2/graphene heterostructure of ~0.13% and ~1.41%, respectively, and (b) a contraction of the (Mn−O) bond length of the neighboring atoms of the VO and VMn monovacancies of ~2.34% and ~6.83%, respectively. Calculations of the Bader charge for the heterostructure without and with VO and VMn monovacancies show that these monovacancies induce significant changes in the charge of the first-neighbor atoms of the VO and VMn vacancies, generating chemically active sites (locales) that could favor the adsorption of external atoms and molecules. From the analysis of the density of state and the structure of the bands, we found that the graphene conserves the Dirac cone in the heterostructure with or without vacancies, while the 1T–MnO2 monolayer in the heterostructures without and with VO monovacancies exhibits half-metallic and magnetic behavior. These properties mainly come from the hybridization of the 3d–Mn and 2p–O states. In both cases, the heterostructure possesses a magnetic moment of 3.00 μβ/Mn. From this behavior, it can be inferred the heterostructures with and without VO monovacancies could be used in spintronics.

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Li, Xinlu, Meng Zhu, Yaoyuan Wang, Fanxing Zheng, Jianting Dong, Ye Zhou, Long You, and Jia Zhang. "Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe₃GaTe₂ with highly spin-polarized Fermi surfaces." Applied Physics Letters 122, no. 8 (February 20, 2023): 082404. http://dx.doi.org/10.1063/5.0136180.

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Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW materials has largely impeded its development in practical spintronic devices. Inspired by the lately discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

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Hung, Chang-Ming, Diem Thi-Xuan Dang, Amit Chanda, Derick Detellem, Noha Alzahrani, Nalaka Kapuruge, Yen T. H. Pham, et al. "Enhanced Magnetism and Anomalous Hall Transport through Two-Dimensional Tungsten Disulfide Interfaces." Nanomaterials 13, no. 4 (February 18, 2023): 771. http://dx.doi.org/10.3390/nano13040771.

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The magnetic proximity effect (MPE) has recently been explored to manipulate interfacial properties of two-dimensional (2D) transition metal dichalcogenide (TMD)/ferromagnet heterostructures for use in spintronics and valleytronics. However, a full understanding of the MPE and its temperature and magnetic field evolution in these systems is lacking. In this study, the MPE has been probed in Pt/WS2/BPIO (biphase iron oxide, Fe3O4 and α-Fe2O3) heterostructures through a comprehensive investigation of their magnetic and transport properties using magnetometry, four-probe resistivity, and anomalous Hall effect (AHE) measurements. Density functional theory (DFT) calculations are performed to complement the experimental findings. We found that the presence of monolayer WS2 flakes reduces the magnetization of BPIO and hence the total magnetization of Pt/WS2/BPIO at T > ~120 K—the Verwey transition temperature of Fe3O4 (TV). However, an enhanced magnetization is achieved at T < TV. In the latter case, a comparative analysis of the transport properties of Pt/WS2/BPIO and Pt/BPIO from AHE measurements reveals ferromagnetic coupling at the WS2/BPIO interface. Our study forms the foundation for understanding MPE-mediated interfacial properties and paves a new pathway for designing 2D TMD/magnet heterostructures for applications in spintronics, opto-spincaloritronics, and valleytronics.

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Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics." MRS Bulletin 28, no. 10 (October 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.

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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.

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SUN, NIAN X., and GOPALAN SRINIVASAN. "VOLTAGE CONTROL OF MAGNETISM IN MULTIFERROIC HETEROSTRUCTURES AND DEVICES." SPIN 02, no. 03 (September 2012): 1240004. http://dx.doi.org/10.1142/s2010324712400048.

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Multiferroic materials and devices have attracted intensified recent interests due to the demonstrated strong magnetoelectric (ME) coupling in new multiferroic materials and devices with unique functionalities and superior performance characteristics. Strong ME coupling has been demonstrated in a variety of multiferroic heterostructures, including bulk magnetic on ferro/piezoelectric multiferroic heterostructures, magnetic film on ferro/piezoelectric slab multiferroic heterostructures, thin film multiferroic heterostructures, etc. Different multiferroic devices have been demonstrated, which include magnetic sensors, energy harvesters, and voltage tunable multiferroic RF/microwave devices which are compact, lightweight, and power efficient. In this progress report, we cover the most recent progress on multiferroic heterostructures and devices with a focus on voltage tunable multiferroic heterostructures and devices with strong converse ME coupling. Recent progress on magnetic-field tunable RF/microwave devices are also covered, including novel non-reciprocal tunable bandpass filters with ultra wideband isolation, compact, low loss and high power handling phase shifters, etc. These novel tunable multiferroic heterostructures and devices and tunable magnetic devices provide great opportunities for next generation reconfigurable RF/microwave communication systems and radars, Spintronics, magnetic field sensing, etc.

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Zhao, Duo, Xiaolei Wang, Zhijie Wang, and Dahai Wei. "Tuning superconductivity with spin–orbit coupling and proximity effects in ferromagnet/superconductor/ heavy metal heterostructures." Journal of Physics D: Applied Physics 55, no. 17 (January 31, 2022): 175301. http://dx.doi.org/10.1088/1361-6463/ac4cf6.

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Abstract In superconducting/ferromagnet heterostructures, spin-triplet Cooper pairs that carry spin information are crucial for the realization of superconducting spintronics. It has been theoretically proposed that they can be generated and controlled by the magnetic proximity effect and spin–orbit coupling (SOC), resulting in a change in the critical temperature (T C). However, experiments are still lacking, which limits the development of device applications. Here, we fabricate a series of Co/Nb/Pt heterostructures and reference samples, where the SOC and magnetic proximity can be independently controlled. We found the suppression of T C up to 11% by the different Rashba-SOC at the Nb/Pt and Nb/Cu interfaces, and the normalized T C/T C 0 was successfully tuned by 24% with the coeffect of SOC and magnetic proximity. Through rigorous comparison, we attribute the tuning of superconductivity to the spin-triplet Cooper pairs, which is controlled by both the SOC strength and magnetic proximity. Our results offer a new pathway to control superconductivity with SOC and pave a new direction for the design of superconducting spintronics devices.

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Béa, H., M. Bibes, M. Sirena, G. Herranz, K. Bouzehouane, E. Jacquet, S. Fusil, et al. "Combining half-metals and multiferroics into epitaxial heterostructures for spintronics." Applied Physics Letters 88, no. 6 (February 6, 2006): 062502. http://dx.doi.org/10.1063/1.2170432.

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20

Kamalakar, M. Venkata, André Dankert, Johan Bergsten, Tommy Ive, and Saroj P. Dash. "Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures." Applied Physics Letters 105, no. 21 (November 24, 2014): 212405. http://dx.doi.org/10.1063/1.4902814.

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21

TANAKA, Masaaki. "New Functionalities and Spintronics Applications of Ferromagnetic Semiconductors and Their Heterostructures." Journal of The Institute of Electrical Engineers of Japan 139, no. 10 (October 1, 2019): 679–85. http://dx.doi.org/10.1541/ieejjournal.139.679.

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Bea, H., M. Bibes, G. Herranz, Xiao-Hong Zhu, S. Fusil, K. Bouzehouane, E. Jacquet, C. Deranlot, and A. Barthelemy. "Integration of Multiferroic BiFeO$_3$ Thin Films into Heterostructures for Spintronics." IEEE Transactions on Magnetics 44, no. 7 (July 2008): 1941–45. http://dx.doi.org/10.1109/tmag.2008.924540.

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Hamaya, Kohei, Makoto Kawano, Yuichi Fujita, Soichiro Oki, and Shinya Yamada. "Finely Controlled Approaches to Formation of Heusler-Alloy/Semiconductor Heterostructures for Spintronics." MATERIALS TRANSACTIONS 57, no. 6 (2016): 760–66. http://dx.doi.org/10.2320/matertrans.me201503.

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Cao, Yuan, Xinhe Wang, Xiaoyang Lin, Wei Yang, Chen Lv, Yuan Lu, Youguang Zhang, and Weisheng Zhao. "Movable-Type Transfer and Stacking of van der Waals Heterostructures for Spintronics." IEEE Access 8 (2020): 70488–95. http://dx.doi.org/10.1109/access.2020.2984942.

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Müller, M., R. Hoepfl, L. Liensberger, S. Geprägs, H. Huebl, M. Weiler, R. Gross, and M. Althammer. "Growth optimization of TaN for superconducting spintronics." Materials for Quantum Technology 1, no. 4 (October 29, 2021): 045001. http://dx.doi.org/10.1088/2633-4356/ac2e14.

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Abstract We have optimized the growth of superconducting TaN thin films on SiO2 substrates via dc magnetron sputtering and extract a maximum superconducting transition temperature of T c = 5 K as well as a maximum critical field μ 0 H c2 = (13.8 ± 0.1) T. This material is of interest for both different fields of quantum technology and superconducting spintronics as it represents a magnetic field-robust superconductor with strong spin–orbit interaction (SOI). After presenting the results of the growth optimization, we investigate in the second part the impact of the strong SOI in TaN on superconductor/ferromagnet heterostructures. To this end, we analyze the magnetization dynamics of both normal state and superconducting TaN/Ni80Fe20 (permalloy, Py)-bilayers as a function of temperature using broadband ferromagnetic resonance spectroscopy. In particular, we quantify the inverse current-induced torques of the bilayers and compare these results to NbN/Py-bilayers. In the normal state of TaN, we detect a positive damping-like current-induced torque σ d from the inverse spin Hall effect and a small field-like torque σ f attributed to the inverse Rashba–Edelstein effect at the TaN/Py-interface. In the superconducting state of TaN, we detect a negative σ d attributed to the quasiparticle mediated inverse spin Hall effect (QMiSHE) and the unexpected manifestation of a large positive field-like σ f of unknown origin matching our previous results for NbN/Py-bilayers. The QMiSHE can be used to probe spin currents in emergent quantum materials.

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Safi, Taqiyyah S., Chung-Tao Chou, Justin T. Hou, Jiahao Han, and Luqiao Liu. "Spin-generation in magnetic Weyl semimetal Co₂MnGa across varying degree of chemical order." Applied Physics Letters 121, no. 9 (August 29, 2022): 092404. http://dx.doi.org/10.1063/5.0102039.

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Recently discovered magnetic Weyl semimetals (MWSM), with enhanced Berry curvature stemming from the topology of their electronic band structure, have gained much interest for spintronics applications. In this category, Co2MnGa, a room temperature ferromagnetic Heusler alloy, has garnered special interest as a promising material for topologically driven spintronic applications. However, until now, the structural-order dependence of spin current generation efficiency through the spin Hall effect has not been fully explored in this material. In this paper, we study the evolution of magnetic and transport properties of Co2MnGa thin films from the chemically disordered B2 to ordered L21 phase. We also report on the change in spin generation efficiency across these different phases, using heterostructures of Co2MnGa and ferrimagnet Co xTb1− x with perpendicular magnetic anisotropy. We measured large spin Hall angles in both the B2 and L21 phases, and within our experimental limits, we did not observe the advantage brought by the MWSM ordering in generating a strong spin Hall angle over the disordered phases, which suggests more complicated mechanisms over the intrinsic, Weyl-band structure-determined spin Hall effect in these material stacks.

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Ramasse, Quentin, Demie Kepaptsoglou, Kenji Nawa, Matthieu Bugnet, Guillaume Radtke, and Vlado Lazarov. "Atomic-Scale Vibrational and Electronic Response of Interfaces in Heterostructures for Spintronics Applications." Microscopy and Microanalysis 27, S1 (July 30, 2021): 104–5. http://dx.doi.org/10.1017/s1431927621000994.

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Huang, Lin, Yongjian Zhou, Tingwen Guo, Feng Pan, and Cheng Song. "Tunable Spin Hall Magnetoresistance in All-Antiferromagnetic Heterostructures." Chinese Physics Letters 39, no. 4 (April 1, 2022): 047502. http://dx.doi.org/10.1088/0256-307x/39/4/047502.

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We investigate the spin Hall magnetoresistance (SMR) in all-antiferromagnetic heterostructures α-Fe2O3/Cr2O3 with Pt contacts. When the temperature is ultralow (< 50 K), the spin current generated in the Pt layer cannot be transmitted through Cr2O3 (t = 4 nm), and the SMR is near zero. Meanwhile, when the temperature is higher than the spin fluctuation temperature T F (≈ 50 K) of Cr2O3 and lower than its Néel temperature T N (≈ 300 K), the spin current goes through the Cr2O3 layer and is reflected at the α-Fe2O3/Cr2O3 interface; an antiferromagnetic (negative) SMR is observed. As temperature increases higher than T N, paramagnetic (positive) SMR mainly arises from the spin current reflection at the Cr2O3/Pt interface. The transition temperatures from negative to positive SMR are enhanced with increasing Cr2O3 layer thickness, accompanied by the absence of SMR signals when t = 10 nm. Such a tunable SMR builds a bridge between spin transport and structures. It also enriches antiferromagnetic spintronics.

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Abbes, Omar, Feng Xu, Alain Portavoce, Khalid Hoummada, Vinh Le Thanh, and Christophe Girardeaux. "Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)." Solid State Phenomena 172-174 (June 2011): 579–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.172-174.579.

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In recent years, spintronics whose principle is based on controlling the spin of electrons in semiconductor layers is presented as a complementary or even an alternative solution for production of logic devices in microelectronics. It relies on the fact that electric current in a magnetic layer can be spin polarized. Manufacture of such components is based on the use of materials or heterostructures whose electronic properties depend on their magnetic state. The magnetic Mn-Ge system is interesting because of its possible development at high Curie temperature and its integration on Si substrate. Among all of the Mn-Ge phase compounds of the diagram, Mn5Ge3 seems the most interesting one for spintronics applications: it is a stable and ferromagnetic phase at room temperature. In this paper, we present first results of the study, by Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), of the sequence of formation of the MnxGey phases in the case of reaction of a nanometric-thick Mn film (200nm) deposited by MBE on Ge (111).

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Han, Zichao, Tianyao Wei, Qingyu Xiao, Xinyi Zhong, Du Xiang, and Tao Liu. "Fabrication of patternable Janus transition-metal dichalcogenides assisted by electron beam irradiation." Applied Physics Letters 120, no. 22 (May 30, 2022): 221901. http://dx.doi.org/10.1063/5.0095650.

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Two-dimensional Janus transition metal dichalcogenides exhibit intrinsic out-of-plane structural symmetry breaking, which facilitates their applications in spintronics through the enhanced Rashba spin–orbit coupling. Fabrication of Janus structures in a deterministic fashion is essential for their practical heterogeneous integration, which, however, remains challenging in the aspect of material synthesis technology. Here, we demonstrate a synthetic strategy to fabricate Janus WSSe structures at definite positions on its tungsten disulfide (WS2) host through the local electron beam irradiation followed by controllable selenization. We show that the energetic electron flux can significantly modulate the WS2 lattice properties, which locally increase the energy barrier between the WS2 and its Janus counterpart WSSe, thus preventing the irradiated WS2 from being selenized and creating well-defined hetero-boundaries. Moreover, by using monolayer and bilayer WS2 as the hosts, both lateral and vertical heterostructures of WSSe–WS2 can be achieved in a patternable manner. Our work provides a viable route toward the controllable fabrication of the Janus structures for multi-functional spintronics.

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Bello, Jean-Loïs, Yassine Quessab, Jun-Wen Xu, Maxime Vergès, Héloïse Damas, Sébastien Petit-Watelot, Juan-Carlos Rojas Sánchez, Michel Hehn, Andrew D. Kent, and Stéphane Mangin. "Field-free current-induced magnetization switching in GdFeCo: A competition between spin–orbit torques and Oersted fields." Journal of Applied Physics 132, no. 8 (August 28, 2022): 083903. http://dx.doi.org/10.1063/5.0091944.

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Switching of perpendicular magnetization via spin–orbit torque (SOT) is of particular interest in the development of non-volatile magnetic random access memory (MRAM) devices. We studied current-induced magnetization switching of Ir/GdFeCo/Cu/Pt heterostructures in a Hall cross geometry as a function of the in-plane applied magnetic field. Remarkably, magnetization switching is observed at zero applied field. This is shown to result from the competition between SOT, the Oersted field generated by the charge current, and the material's coercivity. Our results show a means of achieving zero-field switching that can impact the design of future spintronics devices, such as SOT-MRAM.

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Kumar, Arvind, and P. C. Srivastava. "X-ray photoelectron spectroscopy (XPS) study of Heusler alloy (Co2FeAl) interfaced with semiconductor (n-Si) structure." Materials Science-Poland 37, no. 1 (March 1, 2019): 116–21. http://dx.doi.org/10.2478/msp-2019-0001.

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AbstractLayered magnetic heterostructures are very promising candidates in spintronics in which the influences of interfaces, surfaces and defects play a crucial role. X-ray photoelectron spectroscopy (XPS) study has been performed for studying in detail the chemical state and electronic structure of Co2FeAl (CFA) Heusler alloy interfaced with Si substrates. XPS survey scan spectra have clearly shown the presence of Fe, Co and Al signal along with the signal due to Si. The presence of Co, Fe and Al signal confirms the formation of CFA alloy phase. Our XPS results support our previous study [1] on CFA/Si structure in determining the magnetic and transport properties across the interface.

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Li, Xiaoxi, Xuanzhe Sha, Ning Yan, and Tongyao Zhang. "Mechanical Detection of Magnetic Phase Transition in Suspended CrOCl Heterostructures." Magnetochemistry 8, no. 12 (November 25, 2022): 170. http://dx.doi.org/10.3390/magnetochemistry8120170.

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With their outstanding mechanical and magnetic characteristics, two-dimensional magnetic materials have attracted wide attentions in the field of nanoelectromechanics and spintronics. By tuning the mechanical resonance with external knobs, such as strain, electric and magnetic control, nanoelectromechanical sensors with novel functionalities have been successfully demonstrated. Here, we investigate the mechanical properties of the suspended membranes with few-layered antiferromagnetic material CrOCl. The results show that the Young’s modulus of CrOCl resonators is ~137.29 GPa by using a static detection method. Below the transition temperature TN, the mechanical resonance is found to strongly depend on the magnetic fields with an enormous blueshift of ~3.1% in the magnetic-field-induced phase transition. In addition, we also found that the variation of strain of system ∆ϵ was about 1.5 × 10−3 during the transition. Our study shows the great potential of two-dimensional magnetic materials in future nanoelectronic applications.

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Quinard, B., F. Godel, M. Galbiati, V. Zatko, A. Sander, A. Vecchiola, S. Collin, et al. "A ferromagnetic spin source grown by atomic layer deposition." Applied Physics Letters 120, no. 21 (May 23, 2022): 213503. http://dx.doi.org/10.1063/5.0087869.

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We report on the growth of a ferromagnetic cobalt electrode by atomic layer deposition (ALD) and demonstrate it as a functional spin source in complete magnetic tunnel junctions (MTJs). Using an in situ protocol, we integrate a reference tunnel barrier on top of the ALD cobalt spin source stabilizing its metallic nature and allowing further characterization. The cobalt layer, grown in mbar conditions with chemical precursors, is assessed to be metallic and ferromagnetic using both x-ray photoelectron spectroscopy and superconducting quantum interference device magnetometry measurements. Atomic force microscopy tapping and conductive tip mode analyses reveal a very flat film with low roughness (0.2 nm RMS) with a high homogeneity of surface conductivity matching the best reference samples grown by sputtering. We finally evaluate its behavior in full MTJ spin valves, using a reference spin analyzer to highlight that the ALD grown layer is, indeed, spin polarized and can act as a functional spintronics electrode. This result opens the perspective of exploiting the benefits of ALD (such as the wide area low-cost process, extreme conformality, layer by layer growth of heterostructures, area selectivity, etc.) for spintronics applications.

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Liu, Ming, and Nian X. Sun. "Voltage control of magnetism in multiferroic heterostructures." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2009 (February 28, 2014): 20120439. http://dx.doi.org/10.1098/rsta.2012.0439.

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Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

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Shi, Xiaohui, Jiawei Jiang, Yadong Wang, Zhipeng Hou, Qiang Zhang, Wenbo Mi, and Xixiang Zhang. "Emergence of Room Temperature Magnetotransport Anomaly in Epitaxial Pt/γ′-Fe4N/MgO Heterostructures toward Noncollinear Spintronics." ACS Applied Materials & Interfaces 13, no. 22 (May 27, 2021): 26639–48. http://dx.doi.org/10.1021/acsami.1c07098.

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Ni, Hao, Yi Wang, Feng Zhang, Jinwei Yang, Meng Wang, Xin Guo, Lu Chen, Shengnan Wang, and Ming Zheng. "Electric-Field-Tunable Transport and Photo-Resistance Properties in LaMnO3−x/PMN-PT Heterostructures." Coatings 12, no. 7 (June 23, 2022): 890. http://dx.doi.org/10.3390/coatings12070890.

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Multiferroic heterojunctions are promising for application in low-power storage and spintronics due to their magnetoelectric coupling properties. Controlling the magnetic and transport properties of magnetic materials by external stimuli and then realizing advanced devices constitute the key mission in this field. We fabricated a multiferroic heterostructure consisting of a ferroelectric single-crystal (001)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate and an epitaxial 40 nm LaMnO3−x film. By applying dc electric fields to the ferroelectric substrate, the resistance and the photo-resistance of the LaMnO3−x film could be significantly modulated. With the electric field increasing from 0 to +4.8 kV/cm, the photo-resistance increased by ~4.1% at room temperature. The curve of photo-resistance versus the cycling electric field has a butterfly shape due to the piezoelectric strain effect. Using in situ X-ray diffraction measurements, the linear relationship of the strain and the electric field was quantitatively studied.

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Golovchanskiy, Igor A., Nikolay N. Abramov, Vasily S. Stolyarov, Martin Weides, Valery V. Ryazanov, Alexander A. Golubov, Alexey V. Ustinov, and Mikhail Yu Kupriyanov. "Ultrastrong photon-to-magnon coupling in multilayered heterostructures involving superconducting coherence via ferromagnetic layers." Science Advances 7, no. 25 (June 2021): eabe8638. http://dx.doi.org/10.1126/sciadv.abe8638.

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The critical step for future quantum industry demands realization of efficient information exchange between different-platform hybrid systems that can harvest advantages of distinct platforms. The major restraining factor for the progress in certain hybrids is weak coupling strength between the elemental particles. In particular, this restriction impedes a promising field of hybrid magnonics. In this work, we propose an approach for realization of on-chip hybrid magnonic systems with unprecedentedly strong coupling parameters. The approach is based on multilayered microstructures containing superconducting, insulating, and ferromagnetic layers with modified photon phase velocities and magnon eigenfrequencies. The enhanced coupling strength is provided by the radically reduced photon mode volume. Study of the microscopic mechanism of the photon-to-magnon coupling evidences formation of the long-range superconducting coherence via thick strong ferromagnetic layers in superconductor/ferromagnet/superconductor trilayer in the presence of magnetization precession. This discovery offers new opportunities in microwave superconducting spintronics for quantum technologies.

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Zhang, Yi, Weiwei Ju, Tongwei Li, and Haisheng Li. "Band engineering of borophene superlattice based on zigzag nanoribbons: A DFT study." Modern Physics Letters B 34, no. 32 (August 3, 2020): 2050359. http://dx.doi.org/10.1142/s0217984920503595.

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By performing density functional theory (DFT) calculations, we demonstrate that periodically repeating heterostructures of zigzag borophene nanoribbons (BNR) of different widths can form stable borophene superlattice (BSL). The energy band structures of BSL can be modulated through modifying the width and length of the segments. A metal-semiconductor transition can be obtained when the length of each segment is lengthened, whereas, the magnetism of BSL is influenced by the width of the segments. In those magnetic systems, the magnetic moments are mainly localized on protruding B atoms located at the edge, while no magnetic moments occur in the center B atoms. The hydrogenated BNR and BSL are further investigated. The hydrogenation can modify the electronic properties of BNR and BSL as well as quench the magnetism. All hydrogenated BNR and BSL are non-magnetic. Our results indicate that great potential exists in these systems for borophene utilization in nanoelectronics and spintronics.

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Gupta, Anshu, Ajit Singh, Chandan Bera, and Suvankar Chakraverty. "Light-matter interaction of the polar-polar interface LaVO₃-KTaO₃ (111)." Journal of Physics: Conference Series 2518, no. 1 (June 1, 2023): 012009. http://dx.doi.org/10.1088/1742-6596/2518/1/012009.

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KTaO3 (KTO) has emerged as a potential candidate in the spintronics block showing the emergent phenomena in its bulk form as well as thin films, especially in KTO-based heterostructures and interfaces. In this work, we have grown a thin film of polar Mott insulator LaVO3 (LVO) on polar band insulator KTO (111) using the pulsed laser deposition technique. This interfce shows the insulator-to-metal transition. We have studied the photoelectrical properties by using a blue laser light of wavelength 405 nm for illumination in temperatures ranging from 76 K and 300 K. Under blue light illumination, the interface shows enhancement in conductivity, for both 76 K to 300 K. This system has shown the persistent photoconductivity as well. Further, electrostatic gating has also been applied to tune the charge carrier density and the conductivity is increased by around 23 % under the effect of light and electrostatic gating.

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Garbaczewski, Piotr, Vladimir A. Stephanovich, and Grzegorz Engel. "Electron spectra in double quantum wells of different shapes." New Journal of Physics 24, no. 3 (March 1, 2022): 033052. http://dx.doi.org/10.1088/1367-2630/ac5c64.

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Abstract We suggest a method for calculating electronic spectra in ordered and disordered semiconductor structures (superlattices) forming double quantum wells (QWs). In our method, we represent the solution of Schrödinger equation for QW potential with the help of the solution of the corresponding diffusion equation. This is because the diffusion is the mechanism, which is primarily responsible for amorphization (disordering) of the QW structure, leading to so-called interface mixing. We show that the electron spectrum in such a structure depends on the shape of the QW, which, in turn, corresponds to an ordered or disordered structure. Namely, in a disordered substance, QW typically has smooth edges, while in ordered one it has an abrupt, rectangular shape. The present results are relevant for the heterostructures like GaAs/AlGaAs, GaN/AlGaN, HgCdTe/CdTe, ZnSe/ZnMnSe, Si/SiGe, etc, which may be used in high-end electronics, flexible electronics, spintronics, optoelectronics, and energy harvesting applications.

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Ansari, Mohammad Shahnawaze, Mohd Hafiz Dzarfan Othman, Mohammad Omaish Ansari, Sana Ansari, and Mohd Zamri Mohd Yusop. "Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: Heterostructures for flexible spintronics." Journal of Alloys and Compounds 816 (March 2020): 152532. http://dx.doi.org/10.1016/j.jallcom.2019.152532.

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Albarakati, Sultan, Cheng Tan, Zhong-Jia Chen, James G. Partridge, Guolin Zheng, Lawrence Farrar, Edwin L. H. Mayes, et al. "Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures." Science Advances 5, no. 7 (July 2019): eaaw0409. http://dx.doi.org/10.1126/sciadv.aaw0409.

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With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe3GeTe2 (FGT)/graphite/FGT devices. Unlike conventional giant MR (GMR), which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high-, intermediate-, and low-resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three-resistance behavior was attributed to a spin momentum locking induced spin-polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.

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Shi, Xiaohui, Mei Wu, Zhengxun Lai, Xujing Li, Peng Gao, and Wenbo Mi. "Bending Strain-Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ′-Fe4N/Muscovite Epitaxial Heterostructures toward Flexible Spintronics." ACS Applied Materials & Interfaces 12, no. 24 (May 28, 2020): 27394–404. http://dx.doi.org/10.1021/acsami.0c08042.

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Sun, Yiming, Liangwei Wu, Mengmeng Yang, Mengjia Xia, Wei Gao, Dongxiang Luo, Nengjie Huo, and Jingbo Li. "Anomalous Hall Effect and Magneto-Optic Kerr Effect in Pt/Co/Pt Heterostructure." Magnetochemistry 8, no. 5 (May 12, 2022): 56. http://dx.doi.org/10.3390/magnetochemistry8050056.

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Magnetic multilayer with large perpendicular magnetic anisotropy (PMA) has attracted sustained interest owing to its importance to fundamental physics and applications. In this work, the high quality of Pt/Co/Pt heterostructures with large PMA was successfully achieved to exhibit a large anomalous Hall effect (AHE) with squared Hall loops. By calculating the proportional relationship between the longitudinal resistivity (ρxx) and the abnormal Hall coefficient (Rs), it is confirmed that the basic mechanism of AHE comes from the external skew scattering (SS) and side jump (SJ), while SS contribution, related to asymmetric scattering from impurities, is dominant in the AHE. Furthermore, the obvious magneto-optical Kerr effect (MOKE) was also observed using the polar MOKE microscopy. The obviously circular magnetic domain can form and propagate in response to the applied out-of-plane magnetic field, resulting in the magnetization reversal of the entire film. This work offers important information in terms of both AHE and MOKE in the ultrathin ferromagnetic films with perpendicular anisotropy, establishing the application foundation for the nonvolatile memories and spintronics.

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Xuan, Wenhua, Ningjing Yang, Jinlong Luo, Rongli Wang, Hai Yang, and Guojun Jin. "Strain-modulated Rashba spin splitting and optical absorption of MoSSe/WSe$$_2$$ heterostructures." Applied Physics A 129, no. 2 (January 9, 2023). http://dx.doi.org/10.1007/s00339-022-06354-7.

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AbstractEffective modulation of electronic and optical properties for van der Waals heterostructures is beneficial to spintronics and optoelectronic devices. We use first-principle calculations to investigate the effects of intralaminar biaxial strain on the Rashba spin splitting and optical absorption of MoSSe/WSe$$_2$$ 2 heterostructures. First, considering the different stacking manners, the most stable configuration is confirmed from six heterostructures. The results show that this is in type II energy band alignment, which effectively reduces the carrier recombination rate. Second, Rashba splitting strength can be effectively modulated by biaxial strain, and splitting occurs at the $$\Gamma $$ Γ point, in which the tensile and compressive strains can suppress and promote the strength, respectively. Third, we calculate the dielectric constant and optical absorption of the MoSSe/WSe$$_2$$ 2 heterostructure and find a higher optical absorption coefficient in visible light scope than two monolayers, and the maximum value can reach 6.11$$\times $$ × $$10^5$$ 10 5 cm$$^{-1}$$ - 1 . The first absorption peak of the heterostructure increases with increasing tensile strain and the absorption edge is red shifted. On the contrary, there is an opposite effect under compressive strain. These results suggest that MoSSe/WSe$$_2$$ 2 heterostructures have potential applications in strain-tunable spintronic and optoelectronic devices.

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Gradauskaite, Elzbieta, Peter Meisenheimer, Marvin Müller, John Heron, and Morgan Trassin. "Multiferroic heterostructures for spintronics." Physical Sciences Reviews, December 18, 2020. http://dx.doi.org/10.1515/psr-2019-0072.

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AbstractFor next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.

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Ou, Yongxi, Wilson Yanez, Run Xiao, Max Stanley, Supriya Ghosh, Boyang Zheng, Wei Jiang, et al. "ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics." Nature Communications 13, no. 1 (May 27, 2022). http://dx.doi.org/10.1038/s41467-022-30738-1.

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AbstractThe rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

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Powalla, Lukas, Jonas Kiemle, Elio J. König, Andreas P. Schnyder, Johannes Knolle, Klaus Kern, Alexander Holleitner, Christoph Kastl, and Marko Burghard. "Berry curvature-induced local spin polarisation in gated graphene/WTe2 heterostructures." Nature Communications 13, no. 1 (June 7, 2022). http://dx.doi.org/10.1038/s41467-022-30744-3.

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AbstractExperimental control of local spin-charge interconversion is of primary interest for spintronics. Van der Waals (vdW) heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have thus far provided global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we probe the gate-tunable local spin polarisation in current-driven graphene/WTe2 heterostructures through magneto-optical Kerr microscopy. Even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We present a theoretical model which fully explains the gate- and bias-dependent onset and spatial distribution of the intense Kerr signal as a result of a non-linear anomalous Hall effect in the heterostructure, which is enabled by its reduced point group symmetry. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important step toward nanoscale, electrical spin control.

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Jin, Wen, Gaojie Zhang, Hao Wu, Li Yang, Wenfeng Zhang, and Haixin Chang. "The development of intrinsic room-temperature 2D ferromagnetic crystals for 2D spintronics." Chinese Physics Letters, March 27, 2023. http://dx.doi.org/10.1088/0256-307x/40/5/057301.

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Abstract Two-dimensional (2D) ferromagnetic crystals with fascinating optical and electrical properties are crucial for nanotechnology and have a wide variety of applications in spintronics. However, the low Curie temperatures of most of the 2D ferromagnetic crystals seriously hindered their practical applications, thus, the search for intrinsic room-temperature 2D ferromagnetic crystals is of great importance for the development of information technology. Progresses have been achieved during the last few years, here, we review recent advances in the field of intrinsic room-temperature 2D ferromagnetic crystals and introduce their application in spintronic devices based on van der Waals heterostructures. Finally, the remaining challenge and future perspective on the development direction of intrinsic room-temperature 2D ferromagnetic crystals for 2D spintronics and van der Waals spintronics are briefly summarized.

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Journal articles on the topic 'Heterostructures for spintronics'

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