Academic literature on the topic 'Heterostructure NCs'
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Journal articles on the topic "Heterostructure NCs"
Li, Haixia, Bingyi Liu, Weiwei Lin, Yang Liu, Yu Wang, Zhongyuan Zhang, Lun Xiong, and Jiayou Tao. "Enhancing Performance of Broadband Photodetectors Based on Perovskite CsPbBr3 Nanocrystals/ZnO-Microwires Heterostructures." Science of Advanced Materials 13, no. 9 (September 1, 2021): 1748–55. http://dx.doi.org/10.1166/sam.2021.4072.
Full textZhou, Xiaomei, Tianshu Zou, and Rui Chen. "Sunlight-Triggered Dye Degradation and Antibacterial Activity of Graphene-Iron Oxide—Titanium Dioxide Heterostructure Nanocomposites." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4158–62. http://dx.doi.org/10.1166/jnn.2020.17685.
Full textWang, Rui, Xiaosi Qi, Ren Xie, Xiu Gong, Chaoyong Deng, and Wei Zhong. "Constructing heterostructural Fe@Fe3C@carbon nanotubes/reduced graphene oxide nanocomposites as lightweight and high-efficiency microwave absorbers." Journal of Materials Chemistry C 8, no. 41 (2020): 14515–22. http://dx.doi.org/10.1039/d0tc04329j.
Full textLiu, Wanli, Jinfeng Liu, Xiaoqian Wang, Jiazhen He, Yuqing Li, and Yong Liu. "Synthesis of Asymmetrical CsPbBr3/TiO2 Nanocrystals with Enhanced Stability and Photocatalytic Properties." Catalysts 13, no. 7 (June 28, 2023): 1048. http://dx.doi.org/10.3390/catal13071048.
Full textLe, Anh Thi, Minh Tan Man, and Minh Hoa Nguyen. "Effect of shell thickness on heterostructure of CdSe/CdS core/shell nanocrystals." Hue University Journal of Science: Natural Science 131, no. 1B (June 30, 2022): 5–10. http://dx.doi.org/10.26459/hueunijns.v131i1b.6491.
Full textLeangtanom, Pimpan, Nattharinee Charoenrat, Sukon Phanichphant, and Viruntachar Kruefu. "Facile Synthesis of CeO2/SnO2 N-N Heterostructure." Applied Mechanics and Materials 891 (May 2019): 200–205. http://dx.doi.org/10.4028/www.scientific.net/amm.891.200.
Full textGuo, Yating, Feng Gao, Pan Huang, Rong Wu, Wanying Gu, Jing Wei, Fangze Liu, and Hongbo Li. "Light-Emitting Diodes Based on Two-Dimensional Nanoplatelets." Energy Material Advances 2022 (February 7, 2022): 1–24. http://dx.doi.org/10.34133/2022/9857943.
Full textTrang, Ton Nu Quynh, Le Thi Ngoc Tu, Tran Van Man, and Vu Thi Hanh Thu. "Photocatalytic activity enhancement for removal of dye molecules based on plasmonic Ag grafted TiO2 nanocubes under visible light driven." Science and Technology Development Journal 23, no. 4 (November 8, 2020): 743–51. http://dx.doi.org/10.32508/stdj.v23i4.2455.
Full textZhang, Ping, Tehreem Munawar, Raya Soltane, Mohsin Javed, Guocong Liu, Shahid Iqbal, Muhammad Azam Qamar, et al. "Fabrication of Cr-ZnFe2O4/S-g-C3N4 Heterojunction Enriched Charge Separation for Sunlight Responsive Photocatalytic Performance and Antibacterial Study." Molecules 27, no. 19 (September 26, 2022): 6330. http://dx.doi.org/10.3390/molecules27196330.
Full textHernandez-Hernandez, Arturo, Victor Tapio Rangel-Kuoppa, Thomas Plach, Francisco De Moure-Flores, Jose G. Quiñones-Galvan, Karen E. Nieto Zepeda, Martin Zapata-Torres, and Miguel Meléndez-Lira. "Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering." Solid State Phenomena 178-179 (August 2011): 61–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.61.
Full textDissertations / Theses on the topic "Heterostructure NCs"
Girardi, Tiago Illipronti 1986. "Efeito de interface nas propriedades ópticas de pontos quânticos de InP/GaAs." [s.n.], 2012. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277762.
Full textDissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
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Resumo: Neste trabalho, estudamos o efeito de diferentes condições de interface de InP/GaAs nas propriedades ópticas de pontos quânticos auto-organizados, crescidos por epitaxia de feixe químico, no modo Stranskii-Krastanov. Espera-se que os pontos quânticos de InP/GaAs apresentem alinhamento de bandas do tipo II, e somente os elétrons ficam confinados, enquanto os buracos ficam localizados nas camadas de GaAs em volta do ponto quântico, atraídos pelo elétron. No entanto, devido ao efeito de mistura de átomos nas interfaces o perfil de potencial nas interfaces pode ser alterado significativamente, afetando, com isso, as propriedades ópticas dos pontos quânticos. Foram estudadas amostras com as seguintes condições de interface entre a camada de InP e as camadas de GaAs: inclusão ou não de uma camada de InGaP em uma ou nas duas interfaces. O InGaP gera uma barreira para ambos os tipos de portadores de carga em uma junção tanto com o GaAs como InP e evita a difusa de As das camadas de GaAs para a de InP. Através de medidas de fotoluminescência resolvida no tempo, observamos a variação do tempo de decaimento da emissão óptica associada aos pontos quânticos de acordo com as diferentes condições de interface. Foi observado um tempo curto de decaimento em amostras sem a inclusão de InGaP e com a inclusão apenas na interface superior, enquanto foi observado um tempo longo quando incluímos camadas de InGaP em ambas as interfaces. O tempo de decaimento curto é incompatível com o alinhamento de bandas do tipo II, que deveria separar espacialmente o elétron do buraco. A partir desses resultados e estudos anteriores a esse trabalho, pudemos concluir que o tempo curto se deve à mistura de átomos nas regiões de ambas as interfaces, gerando ligas que localizam os portadores próximos um ao outro. O tempo longo na amostra contendo InGaP nas duas interfaces é atribuído à separação espacial do elétron e do buraco. O efeito de mistura de átomos nas interfaces, neste caso, não forma uma liga na interface que localize os dois tipos de portadores próximos um ao outro. Isso pode ser uma alternativa de preparação de pontos quânticos de InP/GaAs onde se mantém separados espacialmente o elétron e o buraco
Abstract: We studied the effect of different interface conditions on the optical properties of InP/GaAs self-assembled quantum dots grown by chemical beam epitaxy in the Stranskii-Krastanov mode. InP/GaAs quantum dots is expected to present type II band alignment, and only electrons are confined, whereas the holes are localized in the GaAs layers around the quantum dot, attracted by the electron. However, due to the atomic intermixing effect in the interface the potential profile can be strongly changed, affecting the optical properties of the quantum dots. We studied samples with the following conditions at the interfaces between the InP layer and GaAs layers: the inclusion, or the lack of, a InGaP layer at one of or both interfaces. InGaP generates a barrier for both types of carriers in a junction with GaAs and InP, and avoid the diffusion of As from the GaAs layers to the InP one. Using time-resolved photo-luminescence, we observed a change of the optical emission decay times associated to the quantum dots as the interface condition is changed. We observed a short decay lifetime in samples without InGaP layers and with the inclusion in the top interface only, whereas we observed a long decay time when we included InGaP layers in both interfaces. The short decay lifetime is incompatible with the type II band alignment, where the electron and the hole should be spatially separated. Using these and other previous results, we concluded that the short decay lifetime is due to the atomic intermixing in both interfaces regions, forming alloys that localize the carriers near each other. The long lifetime observed for sample containing InGaP in both interfaces is attributed to the large electron-hole spatial separation. In this case intermixing effects at the interfaces do not form a potential well to localize the carries near each other
Mestrado
Física
Mestre em Física
Silva, Douglas Carlos de Sousa. "Síntese e caracterização de heteroestruturas de Ag2MoO4 e ZnO e investigação da sinergia nas propriedades fotocatalíticas e fotoluminescentes." Universidade Federal de Goiás, 2017. http://repositorio.bc.ufg.br/tede/handle/tede/7260.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES
Nanostructured materials, such as: Ag2MoO4 and ZnO are of great importance because they have unique characteristics and properties, and can be applied in sensors, catalysis, photoluminescence, among other applications. In this work, the Ag2MoO4 and ZnO powders were synthesized separately and in the form of heterostructures, by two different routes, coprecipitation (CP), at room temperature and coprecipitation with subsequent microwave assisted hydrothermal treatment (CPMAHT), at 130 ° C for 30 min, with a heating rate of 10 ° C / min. The heterostructures composed of both materials, Ag2MoO4 and ZnO present in molar proportions ranging from 0.25-2.00%, were synthesized by coprecipitation with subsequent sonochemical processing (CPSP). The Ag2MoO4 samples were obtained with pure cubic phase of spinel type with crystallite size of 143 nm for the sample obtained by CP and 90 nm for the sample obtained by CPTHAM. For the ZnO the hexagonal phase of the wurtzite type, with crystallite sizes of 19 and 49 nm, was obtained for the samples obtained by CP and CPTHAM, respectively. The phases of both Ag2MoO4 and ZnO were observed for the heterostructures obtained by CPSP. The structural and morphological characterization of the obtained materials was performed using X-ray diffraction (XRD) techniques and scanning electron microscopy (SEM). The diffusion reflectance UV-Vis spectroscopy (DRS) was performed to determine the band gap values of the materials. The photoluminescent property was investigated by means of the photoluminescence spectroscopy (PHS) technique, with an improvement in the photoluminescent property of broadband for all the obtained heterostructures. It was also observed that the synergism of the Ag2MoO4 and ZnO materials in the heterostructures resulted in an improvement in the photocatalytic property, leading to a 90% discoloration of the rhodamine B dye in 90 min for the photocatalysis using the Ag2MoO4: 2 ZnO heterostructure.
Materiais nanoestruturados, tais como: o Ag2MoO4 e o ZnO são de grande importância por apresentarem características e propriedades únicas, podendo ser aplicados em sensores, catálise, fotoluminescência, dentre outras aplicações. Neste trabalho, os pós de Ag2MoO4 e ZnO foram sintetizados na sua forma pura por duas rotas diferentes, coprecipitação (CP) a temperatura ambiente e coprecipitação com posterior tratamento hidrotérmico assistido por microondas (CPTHAM), a 130 °C durante 30 min, com taxa de aquecimento de 10 °C/min. Heteroestruturas compostas por ambos os materiais, Ag2MoO4 e ZnO foram obtidas com proporções de 0,25; 0,50; 1 e 2 mols de ZnO para 1 mol de Ag2MoO4. Estas heteroestruturas foram sintetizadas por coprecipitação com posterior processamento sonoquímico (CPPS). As amostras de Ag2MoO4 foram obtidas com fase cúbica pura do tipo espinélio com tamanho de cristalito de 143 nm para a amostra obtida por CP e 90 nm para a amostra obtida por CPTHAM. Para o ZnO foi obtida a fase hexagonal do tipo wurtzita, com tamanhos de cristalito de 19 e 49 nm, para as amostras obtidas por CP e CPTHAM, respectivamente. Foram observadas ambas as fases, tanto do Ag2MoO4 quanto do ZnO para as heteroestruturas obtidas por CPPS. A caracterização estrutural e morfológica dos materiais obtidos foi realizada utilizando das técnicas de difração de raios X (DRX) e microscopia eletrônica de varredura (MEV). A espectroscopia de UV-Vis por reflectância difusa (ERD) foi realizada para determinação dos valores de “band gap” dos materiais. A propriedade fotoluminescente foi investigada por meio da técnica de espectroscopia de fotoluminescência (EFL), sendo observado uma melhora na propriedade fotoluminescente de banda larga para todas as heteroestruturas obtidas. Foi observado também que a sinergia dos materiais Ag2MoO4 e ZnO nas heteroestruturas resultou em uma melhora na propriedade fotocatalítica, levando a uma descoloração do corante rodamina B de 90 % em 90 min para a fotocatálise usando a heteroestrutura Ag2MoO4: 2 ZnO.
Book chapters on the topic "Heterostructure NCs"
"MOVPE-Growth and Characterization of Metastable (GaIn)(NAs)/GaAs Heterostructures for 1.3 μη® Lasers." In Compound Semiconductors 2001, 857–62. CRC Press, 2002. http://dx.doi.org/10.1201/9781482268980-118.
Full textConference papers on the topic "Heterostructure NCs"
Hantke, K., S. Horst, K. Kohli, S. Chatterjee, P. J. Klar, W. Stolz, W. W. Ruhle, et al. "Time-Resolved Photoluminescence of Nitrogen-Cluster States in Dilute Ga(NAs)/GaAs Heterostructures." In CLEO 2007. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4452600.
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