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Journal articles on the topic 'Heteroepitaxial Growth'

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Author: Grafiati

Published: 9 March 2023

Last updated: 10 March 2023

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1

Oh, Hongseok. "Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices." Ceramist 25, no. 4 (December 31, 2022): 412–26. http://dx.doi.org/10.31613/ceramist.2022.25.4.04.

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Semiconductor nanostructures or thin films are vital components of modern optoelectronic devices, such as light-emitting diodes, sensors, or transistors. While single crystalline wafers are used as heteroepitaxial templates for them, increasing demands on flexibility or transferability require separation of the grown semiconductor structures on such substrates, which is technically challenging and expensive. Recent research suggests that large-scale 2D nanomaterials can serve as heteroepitaxial templates and provide additional functionalities such as transferability to foreign substrates or mechanical flexibility. In this paper, growth, structural properties, and optoelectronic device applications of semiconductor nanostructures or thin films which are heteroepitaxially grown on large-scale 2D nanomaterials are reviewed.

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2

Kitabatake, Makoto. "SiC/Si heteroepitaxial growth." Thin Solid Films 369, no. 1-2 (July 2000): 257–64. http://dx.doi.org/10.1016/s0040-6090(00)00819-1.

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3

Grein, C. H., J. P. Faurie, V. Bousquet, E. Tournié, R. Benedek, and T. de la Rubia. "Simulations of heteroepitaxial growth." Journal of Crystal Growth 178, no. 3 (July 1997): 258–67. http://dx.doi.org/10.1016/s0022-0248(96)01193-1.

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4

Sawabe, Atsuhito, Hideo Fukuda, and Kazuhiro Suzuki. "Heteroepitaxial growth of diamond." Electronics and Communications in Japan (Part II: Electronics) 81, no. 7 (July 1998): 28–37. http://dx.doi.org/10.1002/(sici)1520-6432(199807)81:7<28::aid-ecjb4>3.0.co;2-z.

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5

Burrows, Christopher W., Thomas P. A. Hase, and Gavin R. Bell. "Hybrid Heteroepitaxial Growth Mode." physica status solidi (a) 216, no. 8 (October 10, 2018): 1800600. http://dx.doi.org/10.1002/pssa.201800600.

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6

Wasa, Kiyotaka, Isaku Kanno, and Takaaki Suzuki. "Structure and Electromechanical Properties of Quenched PMN-PT Single Crystal Thin Films." Advances in Science and Technology 45 (October 2006): 1212–17. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1212.

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Thin films of single c-domain/single crystal (1-x)Pb(Mg1/3Nb2/3)O3－xPbTiO3 (PMN-PT), x≅0.33 near a morphotropic boundary (MPB) composition, were heteroepitaxially grown on (110)SRO/(001)Pt/(001)MgO substrates by magnetron sputtering. The heteroepitaxial growth was achieved by rf-magneron sputtering at the substrate temperature of 600oC. After sputtering deposition, the sputtered films were quenched from 600oC to room temperature in atmospheric air. The quenching enhanced the heteroepitaxial growth of the stress reduced single c-domain/single crystal PMN-PT thin films. Their electromechanical coupling factor kt measured by a resonance spectrum method was 45% at resonant frequency of 1.3GHz with phase velocity of 5500 to 6000m/s for the film thickness of 2.3μm. The d33 and d31 were 194pC/N and –104pC/N, respectively. The observed kt , d33 ,and d31were almost the same to the bulk single crystal values.

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7

Lebedev, Vadim, Jan Engels, Jan Kustermann, Jürgen Weippert, Volker Cimalla, Lutz Kirste, Christian Giese, et al. "Growth defects in heteroepitaxial diamond." Journal of Applied Physics 129, no. 16 (April 28, 2021): 165301. http://dx.doi.org/10.1063/5.0045644.

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8

Yoshida, S., E. Sakuma, H. Okumura, S. Misawa, and K. Endo. "Heteroepitaxial growth of SiC polytypes." Journal of Applied Physics 62, no. 1 (July 1987): 303–5. http://dx.doi.org/10.1063/1.339147.

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9

Flynn, C. P., and J. A. Eades. "Structural variants in heteroepitaxial growth." Thin Solid Films 389, no. 1-2 (June 2001): 116–37. http://dx.doi.org/10.1016/s0040-6090(01)00768-4.

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10

Tersoff, J. "Kinetic effects in heteroepitaxial growth." Applied Surface Science 188, no. 1-2 (March 2002): 1–3. http://dx.doi.org/10.1016/s0169-4332(01)00700-0.

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11

Christiansen, S., M. Albrecht, and H. P. Strunk. "Selforganization phenomena in heteroepitaxial growth." Computational Materials Science 7, no. 1-2 (December 1996): 213–20. http://dx.doi.org/10.1016/s0927-0256(96)00083-3.

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12

Ando, Y., J. Kuwabara, K. Suzuki, and A. Sawabe. "Patterned growth of heteroepitaxial diamond." Diamond and Related Materials 13, no. 11-12 (November 2004): 1975–79. http://dx.doi.org/10.1016/j.diamond.2004.06.025.

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13

Okubo, Tatsuya, Toru Wakihara, Jacques Plévert, Sankar Nair, Michael Tsapatsis, Yoshifumi Ogawa, Hiroshi Komiyama, Masahiro Yoshimura, and Mark E. Davis. "Heteroepitaxial Growth of a Zeolite." Angewandte Chemie 113, no. 6 (March 16, 2001): 1103–5. http://dx.doi.org/10.1002/1521-3757(20010316)113:6<1103::aid-ange11030>3.0.co;2-i.

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14

Okubo, Tatsuya, Toru Wakihara, Jacques Plévert, Sankar Nair, Michael Tsapatsis, Yoshifumi Ogawa, Hiroshi Komiyama, Masahiro Yoshimura, and Mark E. Davis. "Heteroepitaxial Growth of a Zeolite." Angewandte Chemie International Edition 40, no. 6 (March 16, 2001): 1069–71. http://dx.doi.org/10.1002/1521-3773(20010316)40:6<1069::aid-anie10690>3.0.co;2-w.

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15

Henzler, M. "Growth modes in homo- and heteroepitaxial growth." Progress in Surface Science 42, no. 1-4 (January 1993): 297–316. http://dx.doi.org/10.1016/0079-6816(93)90077-9.

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16

Kamiko, Masao, and Ryoichi Yamamoto. "Surfactant-Mediated Epitaxial Growth of Metallic Thin Films." Advanced Materials Research 117 (June 2010): 55–61. http://dx.doi.org/10.4028/www.scientific.net/amr.117.55.

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The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

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17

Tomitori, Masahiko, and Toyoko Arai. "Germanium Nanostructures on Silicon Observed by Scanning Probe Microscopy." MRS Bulletin 29, no. 7 (July 2004): 484–87. http://dx.doi.org/10.1557/mrs2004.143.

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AbstractScanning tunneling microscopy and noncontact atomic force microscopy have been used to observe germanium growth on Si(001) and Si(111). The atomically resolved images provide invaluable information on heteroepitaxial film growth from the viewpoints of both industrial application and basic science. We briefly review the history of characterizing heteroepitaxial elemental semiconductor systems by means of scanning probe microscopy (SPM), where the Stranski–Krastanov growth mode can be observed on the atomic scale:the detailed phase transition from layer-by-layer growth to three-dimensional cluster growth was elucidated by the use of SPM. In addition, we comment on the potential of SPM for examining the spectroscopic aspects of heteroepitaxial film growth, through the use of SPM tips with well-defined facets.

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18

Bednarski, C., Z. Dai, A. P. Li, and B. Golding. "Studies of heteroepitaxial growth of diamond." Diamond and Related Materials 12, no. 3-7 (March 2003): 241–45. http://dx.doi.org/10.1016/s0925-9635(02)00287-x.

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19

Jiang, X., and C. P. Klages. "Heteroepitaxial diamond growth on (100) silicon." Diamond and Related Materials 2, no. 5-7 (April 1993): 1112–13. http://dx.doi.org/10.1016/0925-9635(93)90282-7.

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20

Haisma, J., A. M. W. Cox, B. H. Koek, D. Mateika, J. A. Pistorius, and E. T. J. M. Smeets. "Heteroepitaxial growth of InP on garnet." Journal of Crystal Growth 87, no. 2-3 (February 1988): 180–84. http://dx.doi.org/10.1016/0022-0248(88)90162-5.

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21

Terada, S., H. Tanaka, and K. Kubota. "Heteroepitaxial growth of Cu3N thin films." Journal of Crystal Growth 94, no. 2 (February 1989): 567–68. http://dx.doi.org/10.1016/0022-0248(89)90038-9.

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22

Djafari Rouhani, M., M. Laroussi, A. Amrani, and D. Estève. "Simulation of GaAs/CdTe heteroepitaxial growth." Journal of Crystal Growth 101, no. 1-4 (April 1990): 122–25. http://dx.doi.org/10.1016/0022-0248(90)90949-l.

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23

Fukumoto, Hirofumi, Takeshi Imura, and Yukio Osaka. "Heteroepitaxial growth of Y2O3films on silicon." Applied Physics Letters 55, no. 4 (July 24, 1989): 360–61. http://dx.doi.org/10.1063/1.102420.

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24

Griesche, J., R. Enderlein, and D. Schikora. "Orientation and strain in heteroepitaxial growth." Physica Status Solidi (a) 109, no. 1 (September 16, 1988): 11–38. http://dx.doi.org/10.1002/pssa.2211090102.

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25

Kaxiras, Efthimios, O. L. Alerhand, J. Wang, and J. D. Joannopoulos. "Theoretical modeling of heteroepitaxial growth initiation." Materials Science and Engineering: B 14, no. 3 (August 1992): 245–53. http://dx.doi.org/10.1016/0921-5107(92)90306-t.

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26

Bialas, H., and J. Niess. "Heteroepitaxial growth of nickel on diamond." Thin Solid Films 268, no. 1-2 (November 1995): 35–38. http://dx.doi.org/10.1016/0040-6090(95)06862-7.

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27

Sun, Yu, Chunhui Yang, Zhaohua Jiang, Yuchun Wan, Cheng Cheng, Xiangbin Meng, Shuwei Hao, and Chao Xu. "The heteroepitaxial growth of KDP/ADP." Crystal Research and Technology 47, no. 5 (February 13, 2012): 517–22. http://dx.doi.org/10.1002/crat.201100570.

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28

Soulière, Véronique, Davy Carole, and Gabriel Ferro. "Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate." Materials Science Forum 858 (May 2016): 155–58. http://dx.doi.org/10.4028/www.scientific.net/msf.858.155.

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This work reports on the CVD heteroepitaxial growth of 3C-SiC layers on diamond (100) substrates. To obtain good layer quality, the growth procedure involves a “silicidation” step consisting in depositing a silicon layer by CVD on the diamond substrate, in order to elaborate a very thin SiC buffer layer. 3C-SiC growth is then performed on this SiC seeding layer. Silicidation and growth parameters have been studied in order to improve the quality and the morphology uniformity of the heteroepitaxial layer. The study points out the role of liquid silicon during the growth process.

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29

McIntyre, Paul C., and Michael J. Cima. "Heteroepitaxial growth of chemically derived ex situ Ba2YCu3O7−x thin films." Journal of Materials Research 9, no. 9 (September 1994): 2219–30. http://dx.doi.org/10.1557/jmr.1994.2219.

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Heteroepitaxial growth of Ba2YCu3O7−x (BYC) thin films prepared by postdeposition annealing on (001) LaAlO3 was characterized by TEM and x-ray diffraction studies of specimens rapidly cooled from various points in the growth heat treatment. Heteroepitaxial nucleation of BYC occurred between 720 and 770 °C during heating at 25 °C/min to the annealing temperature of 830 °C. The c-axis normal BYC rapidly coalesced into a continuous film with nearly complete coverage of the substrate surface after growth of a film of several unit cells thickness. The experimental results were not consistent with purely solid phase heteroepitaxial nucleation and growth or epitaxial grain growth, mechanisms for microstructural evolution of other chemically derived epitaxial oxide thin films. The nature of the transformation and the microstructure of the final superconducting films were consistent, instead, with growth of epitaxial BYC from a liquid phase that is present transiently during the anneal. This hypothesis was supported by thermal analysis results obtained from the precursor material of which the films are composed prior to transformation to BYC.

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30

Barabási, Albert-László. "Self-assembled island formation in heteroepitaxial growth." Applied Physics Letters 70, no. 19 (May 12, 1997): 2565–67. http://dx.doi.org/10.1063/1.118920.

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31

Wei, X. H., Y. R. Li, W. J. Jie, J. L. Tang, H. Z. Zeng, W. Huang, Y. Zhang, and J. Zhu. "Heteroepitaxial growth of ZnO on perovskite surfaces." Journal of Physics D: Applied Physics 40, no. 23 (November 16, 2007): 7502–7. http://dx.doi.org/10.1088/0022-3727/40/23/038.

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32

Mazzitello, K. I., L. M. Delgado, and J. L. Iguain. "Low-coverage heteroepitaxial growth with interfacial mixing." Journal of Statistical Mechanics: Theory and Experiment 2015, no. 1 (January 9, 2015): P01015. http://dx.doi.org/10.1088/1742-5468/2015/01/p01015.

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33

Wang, Qi-min, Qing-gui Chen, Ri-hua Shi, Rong-kang Dong, Ru-shan Ni, and Ji-qian Zhu. "Heteroepitaxial Growth of Single-Crystalline Diamond Film." Chinese Physics Letters 15, no. 11 (November 1, 1998): 819–21. http://dx.doi.org/10.1088/0256-307x/15/11/014.

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34

Le´onard, François, Mohamed Laradji, and Rashmi C. Desai. "Phase separation in heteroepitaxial thin-film growth." Physica A: Statistical Mechanics and its Applications 239, no. 1-3 (May 1997): 129–36. http://dx.doi.org/10.1016/s0378-4371(96)00473-6.

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35

Choudhary, Muhammad Ajmal, and Julia Kundin. "Heteroepitaxial anisotropic film growth of various orientations." Journal of the Mechanics and Physics of Solids 101 (2017): 118–32. http://dx.doi.org/10.1016/j.jmps.2017.01.006.

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36

Biehl, M., M. Ahr, W. Kinzel, and F. Much. "Kinetic Monte Carlo simulations of heteroepitaxial growth." Thin Solid Films 428, no. 1-2 (March 2003): 52–55. http://dx.doi.org/10.1016/s0040-6090(02)01267-1.

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37

Moroz, O. I., and M. V. Makarets. "Modeling of crystal growth in heteroepitaxial systems." Journal of Physics: Conference Series 741 (August 2016): 012046. http://dx.doi.org/10.1088/1742-6596/741/1/012046.

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38

Choudhary, Muhammad Ajmal, Julia Kundin, and Heike Emmerich. "Misfit and dislocation nucleation during heteroepitaxial growth." Computational Materials Science 83 (February 2014): 481–87. http://dx.doi.org/10.1016/j.commatsci.2013.11.030.

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39

Sugo, Mitsuru, Masafumi Yamaguchi, and M. M. Al-Jassim. "Heteroepitaxial growth of InP on Si substrates." Journal of Crystal Growth 99, no. 1-4 (January 1990): 365–70. http://dx.doi.org/10.1016/0022-0248(90)90545-v.

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40

Boschker, Jos, Toni Markurt, Martin Albrecht, and Jutta Schwarzkopf. "Heteroepitaxial Growth of T-Nb2O5 on SrTiO3." Nanomaterials 8, no. 11 (November 1, 2018): 895. http://dx.doi.org/10.3390/nano8110895.

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There is a growing interest in exploiting the functional properties of niobium oxides in general and of the T-Nb2O5 polymorph in particular. Fundamental investigations of the properties of niobium oxides are, however, hindered by the availability of materials with sufficient structural perfection. It is expected that high-quality T-Nb2O5 can be made using heteroepitaxial growth. Here, we investigated the epitaxial growth of T-Nb2O5 on a prototype perovskite oxide, SrTiO3. Even though there exists a reasonable lattice mismatch in one crystallographic direction, these materials have a significant difference in crystal structure: SrTiO3 is cubic, whereas T-Nb2O5 is orthorhombic. It is found that this difference in symmetry results in the formation of domains that have the T-Nb2O5 c-axis aligned with the SrTiO3 <001>s in-plane directions. Hence, the number of domain orientations is four and two for the growth on (100)s- and (110)s-oriented substrates, respectively. Interestingly, the out-of-plane growth direction remains the same for both substrate orientations, suggesting a weak interfacial coupling between the two materials. Despite challenges associated with the heteroepitaxial growth of T-Nb2O5, the T-Nb2O5 films presented in this paper are a significant improvement in terms of structural quality compared to their polycrystalline counterparts.

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41

Hoang, Dieu Hung, M. Beneš, and J. Stráský. "Anisotropic Phase Field Model of Heteroepitaxial Growth." Acta Physica Polonica A 128, no. 4 (October 2015): 520–22. http://dx.doi.org/10.12693/aphyspola.128.520.

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42

Jeong, Hae-Kwon, John Krohn, Khristina Sujaoti, and Michael Tsapatsis. "Oriented Molecular Sieve Membranes by Heteroepitaxial Growth." Journal of the American Chemical Society 124, no. 44 (November 2002): 12966–68. http://dx.doi.org/10.1021/ja020947w.

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43

Tachibana, Takeshi, Yoshihiro Yokota, Koichi Miyata, Koji Kobashi, and Yoshihiro Shintani. "Heteroepitaxial diamond growth process on platinum (111)." Diamond and Related Materials 6, no. 2-4 (March 1997): 266–71. http://dx.doi.org/10.1016/s0925-9635(96)00733-9.

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44

Okajima, M., and T. Tohda. "Heteroepitaxial growth of MnS on GaAs substrates." Journal of Crystal Growth 117, no. 1-4 (February 1992): 810–15. http://dx.doi.org/10.1016/0022-0248(92)90862-d.

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45

Vanamu, G., A. K. Datye, and Saleem H. Zaidi. "Heteroepitaxial growth on microscale patterned silicon structures." Journal of Crystal Growth 280, no. 1-2 (June 2005): 66–74. http://dx.doi.org/10.1016/j.jcrysgro.2005.03.065.

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46

Sakai, Shiro. "Homoepitaxial and heteroepitaxial growth of InGaN/GaN." Electronics and Communications in Japan (Part II: Electronics) 83, no. 2 (February 2000): 17–25. http://dx.doi.org/10.1002/(sici)1520-6432(200002)83:2<17::aid-ecjb3>3.0.co;2-m.

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47

LIAO, YUAN, QINGXUAN YU, GUANZHONG WANG, and RONGCHUAN FANG. "STUDY OF EPITAXIAL GROWTH OF DIAMOND FILM ON HETERO-MATERIAL SUBSTRATE." Modern Physics Letters B 19, no. 22 (September 30, 2005): 1087–93. http://dx.doi.org/10.1142/s021798490500902x.

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We study the epitaxial growth mechanism of diamond films using various hetero-materials as substrates in a hot-filament chemical vapor deposition (HFCVD) chamber. The same parameters were maintained in the nucleation and growth processes of diamond films on these substrates. The experimental results showed that the dominant orientation of diamond crystals has a relation with that of substrates identified by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The preference of diamond films on non-diamond substrates is explained as heteroepitaxial growth. We think that the initial nucleation process is the key to the heteroepitaxial growth of diamond film.

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48

Doucette, L. D., F. Santiago, S. L. Moran, and R. J. Lad. "Heteroepitaxial growth of tungsten oxide films on silicon(100) using a BaF2 buffer layer." Journal of Materials Research 18, no. 12 (December 2003): 2859–68. http://dx.doi.org/10.1557/jmr.2003.0399.

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Multidomained heteroepitaxial WO3 films were grown on Si(100) substrates using a (111)-oriented BaF2 buffer layer at the WO3–Si interface. The 30-nm-thick BaF2 layer, grown by very low rate molecular-beam epitaxy, consisted of four equivalent crystalline domains oriented about the BaF2[111] axis, which provided templates for heteroepitaxial WO3 film growth. The WO3 films were grown by electron cyclotron resonance oxygen plasma-assisted electron beam evaporation of a WO3 source, and the temperature range was varied between 25°C and 600°C. At an optimal deposition temperature of approximately 450°C, monoclinic-phase WO3 films were produced, which consisted of coexisting (002), (020), and (200) in-plane orientations with respect to the BaF2(111)/Si(100) substrate. During growth, an interfacial barium tungstate (BaWO4) reaction product formed at the WO3–BaF2 interface. The {112} planes of this BaWO4 layer also have a multidomained heteroepitaxial orientation with respect to the BaF2(111) buffer layer. Postdeposition annealing experiments in air for 24 h at 400°C indicated that the heteroepitaxial BaWO4 and WO3 layers remain stable. A thermodynamic argument is used to explain the BaWO4 interfacial reaction during initial growth stages, and kinetically limited diffusion processes through the BaWO4layer coupled with lattice matching across the WO3–BaWO4 interface are proposed to be responsible for the formation of stable WO3 films at later growth stages.

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49

Goto, Takayuki, Petr Pulpan, Takahiro Takei, Yoshihiro Kuroiwa, and Satoshi Wada. "Preparation of Strontium Titanate / Barium Titanate Complex Nanoparticles Using New Titanium Chelate Compounds." Key Engineering Materials 445 (July 2010): 175–78. http://dx.doi.org/10.4028/www.scientific.net/kem.445.175.

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The conditions for strontium titanate (SrTiO3, ST) nucleation and particle growth were investigated for preparation of ST/ barium titanate (BaTiO3, BT) complex nanoparticles. The conditions with and without ST nucleation were clarified. Epitaxial growth of ST layer on the BT substrate particles was studied using both conditions. Unfortunately, the ST/BT complex nanoparticles with heteroepitaxial interface were not prepared, but a new two-step solvothermal reaction method was developed. Finally, the ST/BT complex nanoparticles without heteroepitaxial interface were successfully prepared.

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50

Mezaguer, Mourad, Nedjma Ouahioune, and Jean-Noël Aqua. "When finite-size effects dictate the growth dynamics on strained freestanding nanomembranes." Nanoscale Advances 2, no. 3 (2020): 1161–67. http://dx.doi.org/10.1039/c9na00741e.

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