Journal articles on the topic 'He+/Si'
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Pivac, B., B. Rakvin, R. Tonini, F. Corni, and G. Ottaviani. "EPR study of He-implanted Si." Materials Science and Engineering: B 73, no. 1-3 (April 2000): 60–63. http://dx.doi.org/10.1016/s0921-5107(99)00434-1.
Full textBuca, D., S. F. Feste, B. Holländer, S. Mantl, R. Loo, M. Caymax, R. Carius, and H. Schaefer. "Growth of strained Si on He ion implanted Si/SiGe heterostructures." Solid-State Electronics 50, no. 1 (January 2006): 32–37. http://dx.doi.org/10.1016/j.sse.2005.10.042.
Full textKilpeläinen, S., K. Kuitunen, J. Slotte, F. Tuomisto, E. Bruno, S. Mirabella, and F. Priolo. "He implantation induced nanovoids in crystalline Si." Materials Science and Engineering: B 159-160 (March 2009): 164–67. http://dx.doi.org/10.1016/j.mseb.2008.12.010.
Full textAlatalo, M., M. J. Puska, and R. M. Nieminen. "First-principles study of He in Si." Physical Review B 46, no. 19 (November 15, 1992): 12806–9. http://dx.doi.org/10.1103/physrevb.46.12806.
Full textBruno, E., S. Mirabella, E. Napolitani, F. Giannazzo, V. Raineri, and F. Priolo. "He implantation in Si for B diffusion control." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 257, no. 1-2 (April 2007): 181–85. http://dx.doi.org/10.1016/j.nimb.2007.01.034.
Full textLiu, Changlong, E. Ntsoenzok, R. Delamare, D. Alquier, G. Regula, L. Vincent, C. Filadelfo, and A. Claverie. "The evolution of cavities in Si co-implanted with Si and He ions1." Materials Science and Engineering: B 102, no. 1-3 (September 2003): 75–79. http://dx.doi.org/10.1016/s0921-5107(02)00632-3.
Full textZhang, X. D., C. L. Liu, M. K. Li, Y. J. Gao, and D. C. Zhang. "Creation of Si nanocrystals from SiO2/Si by He and H ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 276 (April 2012): 25–29. http://dx.doi.org/10.1016/j.nimb.2012.01.025.
Full textKilpeläinen, S., K. Kuitunen, F. Tuomisto, J. Slotte, E. Bruno, S. Mirabella, and F. Priolo. "Vacancy engineering by He induced nanovoids in crystalline Si." Semiconductor Science and Technology 24, no. 1 (December 5, 2008): 015005. http://dx.doi.org/10.1088/0268-1242/24/1/015005.
Full textAzevedo, G. de M., J. R. A. Kaschny, M. Behar, P. L. Grande, Ch Klatt, and S. Kalbitzer. "Charge equilibration of He ions in the Si channel." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 161-163 (March 2000): 96–100. http://dx.doi.org/10.1016/s0168-583x(99)00677-1.
Full textda Silva, D. L., P. F. P. Fichtner, M. Behar, A. Peeva, R. Koegler, and W. Skorupa. "Implantation temperature dependence of He bubble formation in Si." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190, no. 1-4 (May 2002): 756–60. http://dx.doi.org/10.1016/s0168-583x(01)01260-5.
Full textSakai, A., M. J. Cardillo, and D. R. Hamann. "He-Si(100) potential: Charge superposition and model structures." Physical Review B 33, no. 8 (April 15, 1986): 5774–81. http://dx.doi.org/10.1103/physrevb.33.5774.
Full textBrown, R. A., J. C. McCallum, and J. S. Williams. "2 MeV He microbeam damage in Si and GaAs." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 54, no. 1-3 (March 1991): 197–203. http://dx.doi.org/10.1016/0168-583x(91)95513-d.
Full textFollstaedt, D. M., S. M. Myers, G. A. Petersen, and J. W. Medernach. "Cavity formation and impurity gettering in He-implanted Si." Journal of Electronic Materials 25, no. 1 (January 1996): 157–64. http://dx.doi.org/10.1007/bf02666190.
Full textBriquet, M., S. Hubrig, M. Schöller, and P. De Cat. "Discovery of magnetic fields in three He variable Bp stars with He and Si spots." Astronomische Nachrichten 328, no. 1 (January 2007): 41–45. http://dx.doi.org/10.1002/asna.200610702.
Full textTell, B., K. F. Brown Goebeler, J. E. Cunningham, T. H. Chiu, and W. Y. Jan. "Enhanced diffusion of Si due to He ion implantation in Si‐delta doped GaAs layers." Applied Physics Letters 56, no. 26 (June 25, 1990): 2657–59. http://dx.doi.org/10.1063/1.102844.
Full textXu, M., G. Regula, R. Daineche, E. Oliviero, B. Hakim, E. Ntsoenzok, and B. Pichaud. "Effect of Si and He implantation in the formation of ultra shallow junctions in Si." Thin Solid Films 518, no. 9 (February 2010): 2354–56. http://dx.doi.org/10.1016/j.tsf.2009.09.153.
Full textRaineri, V., S. Coffa, M. Saggio, F. Frisina, and E. Rimini. "Radiation damage–He interaction in He implanted Si during bubble formation and their evolution in voids." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 147, no. 1-4 (January 1999): 292–97. http://dx.doi.org/10.1016/s0168-583x(98)00609-0.
Full textGnidenko, A. A., V. G. Zavodinsky, A. Misiuk, and J. Bak-Misiuk. "First-Principles Calculation of He-H Interaction in c-Si." Acta Physica Polonica A 109, no. 3 (March 2006): 353–57. http://dx.doi.org/10.12693/aphyspola.109.353.
Full textAzevedo, G. de M., J. R. A. Kaschny, M. Behar, P. L. Grande, Ch Klatt, and S. Kalbitzer. "Charge equilibration of energetic He ions in the Si channel." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 168, no. 3 (July 2000): 321–28. http://dx.doi.org/10.1016/s0168-583x(99)01096-4.
Full textMatos, L. G., R. M. S. dos Reis, and R. L. Maltez. "Ne–He bubble formation in co-implanted Si(111) substrates." Thin Solid Films 548 (December 2013): 465–69. http://dx.doi.org/10.1016/j.tsf.2013.09.076.
Full textBernardi, F., L. L. Araújo, M. Behar, and J. F. Dias. "Energy-dependent He flux redistribution through the Si〈100〉 channel." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 249, no. 1-2 (August 2006): 69–72. http://dx.doi.org/10.1016/j.nimb.2006.03.081.
Full textMerkel, D. G., Z. E. Horváth, D. E. Szőcs, R. Kovács-Mezei, G. Gy Kertész, and L. Bottyán. "Stress relaxation in Fe/Si neutron supermirrors by He+ irradiation." Physica B: Condensed Matter 406, no. 17 (September 2011): 3238–42. http://dx.doi.org/10.1016/j.physb.2011.05.032.
Full textBriquet, M., C. Aerts, T. Lüftinger, P. De Cat, N. E. Piskunov, and R. Scuflaire. "He and Si surface inhomogeneities of four Bp variable stars." Astronomy & Astrophysics 413, no. 1 (December 17, 2003): 273–83. http://dx.doi.org/10.1051/0004-6361:20031450.
Full textRiyanti, Menul, and Dodi Setianto. "THE DIGITAL COMIC DEVELOPMENT IN INDONESIA (A CASE STUDY ABOUT THE STORY OF “SI PITUNG”)." International Journal of Research -GRANTHAALAYAH 6, no. 1 (January 31, 2018): 107–17. http://dx.doi.org/10.29121/granthaalayah.v6.i1.2018.1599.
Full textPark, Kyeong Hwan, Sosuke Kondo, Yutai Katoh, and Akira Kohyama. "Mechanical Properties of β-SiC After Si- and Dual Si + He-Ion Irradiation at Various Temperatures." Fusion Science and Technology 44, no. 2 (September 2003): 455–59. http://dx.doi.org/10.13182/fst03-a377.
Full textBuca, D., R. A. Minamisawa, H. Trinkaus, B. Holländer, N. D. Nguyen, R. Loo, and S. Mantl. "Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates." Applied Physics Letters 95, no. 14 (October 5, 2009): 144103. http://dx.doi.org/10.1063/1.3240409.
Full textСоболев, Ю. Г., Ю. Э. Пенионжкевич, В. А. Маслов, М. А. Науменко, В. В. Самарин, И. Сивачек, and С. С. Стукалов. "Измерение полных сечений реакций при столкновениях 6, 8 He + 28 Si и 9 Li + 28 Si." Известия Российской академии наук. Серия физическая 83, no. 4 (2019): 451–59. http://dx.doi.org/10.1134/s0367676519040264.
Full textBureš, D., L. Bartoň, R. Zahrádková, V. Teslík, and M. Krejčová. "Chemical composition, sensory characteristics, and fatty acid profile of muscle from Aberdeen Angus, Charolais, Simmental, and Hereford bulls." Czech Journal of Animal Science 51, No. 7 (December 5, 2011): 279–84. http://dx.doi.org/10.17221/3940-cjas.
Full textBruno, E., S. Mirabella, F. Priolo, K. Kuitunen, F. Tuomisto, J. Slotte, F. Giannazzo, C. Bongiorno, V. Raineri, and E. Napolitani. "He implantation to control B diffusion in crystalline and preamorphized Si." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, no. 1 (2008): 386. http://dx.doi.org/10.1116/1.2816927.
Full textReboh, S., A. A. de Mattos, J. F. Barbot, A. Declemy, M. F. Beaufort, R. M. Papaléo, C. P. Bergmann, and P. F. P. Fichtner. "Localized exfoliation versus delamination in H and He coimplanted (001) Si." Journal of Applied Physics 105, no. 9 (May 2009): 093528. http://dx.doi.org/10.1063/1.3116738.
Full textHandke, R., R. Krzikalla, and Gud Lippert. "Anisotropic plasma etching of P-doped poly-Si with CCl4/He." Crystal Research and Technology 23, no. 9 (September 1988): 1085–91. http://dx.doi.org/10.1002/crat.2170230906.
Full textTuttle, William D., Rebecca L. Thorington, Larry A. Viehland, and Timothy G. Wright. "Theoretical study of Si+(2PJ)–RG complexes and transport of Si+(2PJ) in RG (RG = He–Ar)." Molecular Physics 115, no. 4 (January 12, 2017): 437–46. http://dx.doi.org/10.1080/00268976.2016.1269965.
Full textHuang, Rui, Tian Lan, Chong Li, Jing Li, and Zhiyong Wang. "Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers." Crystals 9, no. 12 (December 12, 2019): 671. http://dx.doi.org/10.3390/cryst9120671.
Full textZhang, Jian-Rong, Wei-Ming Liu, Li-Dong Ma, Qion Yang, Yan-Wei Chen, Yang-Yang Yang, Ya-Feng Shu, Ke-Wei Tao, Lei Yang, and Wen-Shan Duan. "First-principles study of the vacancy and layer defects in Ti3SiC2." International Journal of Modern Physics B 34, no. 20 (August 10, 2020): 2050198. http://dx.doi.org/10.1142/s0217979220501982.
Full textLópez Subia, Beimar. "Entrevista a Beimar López Subia." Journal of Latin American Sciences and Culture 4, no. 5 (June 30, 2022): 62–64. http://dx.doi.org/10.52428/27888991.v4i5.275.
Full textStoeckl, C., M. J. Bonino, C. Mileham, S. P. Regan, W. Theobald, T. Ebert, and S. Sander. "Optimization of a short-pulse-driven Si He soft x-ray backlighter." High Energy Density Physics 41 (September 2021): 100973. http://dx.doi.org/10.1016/j.hedp.2022.100973.
Full textChen, Jihong, Liping Guo, Congxiao Liu, Fengfeng Luo, Tiecheng Li, Zhongcheng Zheng, Shuoxue Jin, and Zheng Yang. "Enhancement of room temperature ferromagnetism in Mn-implanted Si by He implantation." Applied Physics Letters 101, no. 13 (September 24, 2012): 132413. http://dx.doi.org/10.1063/1.4754712.
Full textLi, B. S., C. H. Zhang, and Y. T. Yang. "The effects of Xe irradiation on He and H co-implanted Si." Radiation Effects and Defects in Solids 167, no. 3 (March 2012): 212–19. http://dx.doi.org/10.1080/10420150.2011.629319.
Full textBöttcher, Artur, Ruth Schwaiger, Tobias M. Pazdera, Daniela Exner, Jakob Hauns, Dmitry Strelnikov, Sergei Lebedkin, et al. "Nanoscale patterning at the Si/SiO2/graphene interface by focused He+ beam." Nanotechnology 31, no. 50 (October 6, 2020): 505302. http://dx.doi.org/10.1088/1361-6528/abb5cf.
Full textBruno, E., S. Mirabella, F. Priolo, E. Napolitani, C. Bongiorno, and V. Raineri. "He induced nanovoids for point-defect engineering in B-implanted crystalline Si." Journal of Applied Physics 101, no. 2 (January 15, 2007): 023515. http://dx.doi.org/10.1063/1.2427101.
Full textReboh, S., J. F. Barbot, M. Vallet, M. F. Beaufort, F. Rieutord, F. Mazen, N. Cherkashin, P. F. P. Fichtner, and J. Grilhé. "Nanoscale organization by elastic interactions between H and He platelets in Si." Journal of Applied Physics 114, no. 7 (August 21, 2013): 073517. http://dx.doi.org/10.1063/1.4818812.
Full textRamiere, Aymeric, Jay Amrit, and Sebastian Volz. "Pressure dependence of the thermal contact resistance at the Si/He interface." Journal of Physics: Conference Series 395 (November 26, 2012): 012110. http://dx.doi.org/10.1088/1742-6596/395/1/012110.
Full textIto, T., I. L. Bolotin, B. N. Makarenko, and J. W. Rabalais. "Blocking map of He+ scattered from a Si(001)-(2×1) surface." Surface Science 565, no. 2-3 (September 2004): 163–72. http://dx.doi.org/10.1016/j.susc.2004.06.211.
Full textAzevedo, G. de M., J. R. A. Kaschny, J. F. Dias, P. L. Grande, M. Behar, Ch Klatt, and S. Kalbitzer. "Charge equilibration process for channeled He ions along the Si〈100〉 direction." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148, no. 1-4 (January 1999): 168–71. http://dx.doi.org/10.1016/s0168-583x(98)00801-5.
Full textYamamoto, Y., A. Ikeda, T. Yoneda, K. Kajiyama, and Y. Kido. "Impact-parameter dependent stopping powers for MeV He ions in Si crystals." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 153, no. 1-4 (June 1999): 10–14. http://dx.doi.org/10.1016/s0168-583x(98)00982-3.
Full textWang, Feng-Xiang, Feng Chen, Xue-Lin Wang, Qing-Ming Lu, Ke-Ming Wang, Ding-Yu Shen, Hong-Ji Ma, and Rui Nie. "Fabrication of optical waveguides in KTiOAsO4 by He or Si ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 215, no. 3-4 (February 2004): 389–93. http://dx.doi.org/10.1016/j.nimb.2003.09.011.
Full textReboh, S., A. A. D. de Mattos, F. Schaurich, P. F. P. Fichtner, M. F. Beaufort, and J. F. Barbot. "The mechanisms of surface exfoliation in H and He implanted Si crystals." Scripta Materialia 65, no. 12 (December 2011): 1045–48. http://dx.doi.org/10.1016/j.scriptamat.2011.09.012.
Full textMirabella, S., E. Bruno, F. Priolo, F. Giannazzo, C. Bongiorno, V. Raineri, E. Napolitani, and A. Carnera. "Role of surface nanovoids on interstitial trapping in He implanted crystalline Si." Applied Physics Letters 88, no. 19 (May 8, 2006): 191910. http://dx.doi.org/10.1063/1.2202745.
Full textVaquila, I., I. L. Bolotin, T. Ito, B. N. Makarenko, and J. W. Rabalais. "Ion fraction map of He+ scattered from a Si()-(2×1) surface." Surface Science 496, no. 3 (January 2002): 187–95. http://dx.doi.org/10.1016/s0039-6028(01)01615-6.
Full textHakel, Peter, Roberto C. Mancini, Jean-Claude Gauthier, Emilio Mı́nguez, Jacques Dubau, and Marguerite Cornille. "X-ray line polarization spectroscopy of He-like Si satellite line spectra." Review of Scientific Instruments 72, no. 1 (January 2001): 1245–47. http://dx.doi.org/10.1063/1.1324753.
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